TWI638457B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
- Publication number
- TWI638457B TWI638457B TW103122847A TW103122847A TWI638457B TW I638457 B TWI638457 B TW I638457B TW 103122847 A TW103122847 A TW 103122847A TW 103122847 A TW103122847 A TW 103122847A TW I638457 B TWI638457 B TW I638457B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- oxide
- insulating layer
- semiconductor
- semiconductor layer
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 491
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/402—Amorphous materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
Landscapes
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
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| US20150014679A1 (en) | 2015-01-15 |
| US9691904B2 (en) | 2017-06-27 |
| JP6018607B2 (ja) | 2016-11-02 |
| JP2015035590A (ja) | 2015-02-19 |
| US20150214381A1 (en) | 2015-07-30 |
| KR20150007958A (ko) | 2015-01-21 |
| TW201511284A (zh) | 2015-03-16 |
| KR102329144B1 (ko) | 2021-11-18 |
| JP6442455B2 (ja) | 2018-12-19 |
| US9006736B2 (en) | 2015-04-14 |
| JP2017005277A (ja) | 2017-01-05 |
| US20160336457A1 (en) | 2016-11-17 |
| US9419145B2 (en) | 2016-08-16 |
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