TWI637460B - 保持台 - Google Patents

保持台 Download PDF

Info

Publication number
TWI637460B
TWI637460B TW103145482A TW103145482A TWI637460B TW I637460 B TWI637460 B TW I637460B TW 103145482 A TW103145482 A TW 103145482A TW 103145482 A TW103145482 A TW 103145482A TW I637460 B TWI637460 B TW I637460B
Authority
TW
Taiwan
Prior art keywords
wafer
reinforcing portion
ring
shaped reinforcing
laser light
Prior art date
Application number
TW103145482A
Other languages
English (en)
Chinese (zh)
Other versions
TW201532182A (zh
Inventor
木村早希
土屋利夫
出島健志
Original Assignee
迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 迪思科股份有限公司 filed Critical 迪思科股份有限公司
Publication of TW201532182A publication Critical patent/TW201532182A/zh
Application granted granted Critical
Publication of TWI637460B publication Critical patent/TWI637460B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
    • B23K37/0408—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work for planar work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Jigs For Machine Tools (AREA)
  • Dicing (AREA)
TW103145482A 2014-02-05 2014-12-25 保持台 TWI637460B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014020641A JP6317935B2 (ja) 2014-02-05 2014-02-05 保持テーブル
JP2014-020641 2014-02-05

Publications (2)

Publication Number Publication Date
TW201532182A TW201532182A (zh) 2015-08-16
TWI637460B true TWI637460B (zh) 2018-10-01

Family

ID=53547291

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103145482A TWI637460B (zh) 2014-02-05 2014-12-25 保持台

Country Status (7)

Country Link
JP (1) JP6317935B2 (ko)
KR (1) KR102175865B1 (ko)
CN (1) CN104816100B (ko)
DE (1) DE102015201833B4 (ko)
MY (1) MY181072A (ko)
SG (1) SG10201500647RA (ko)
TW (1) TWI637460B (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6371579B2 (ja) * 2014-05-12 2018-08-08 株式会社ディスコ チャックテーブル
JP6564669B2 (ja) * 2015-10-06 2019-08-21 株式会社ディスコ デバイスの製造方法
JP6672053B2 (ja) * 2016-04-18 2020-03-25 株式会社ディスコ ウェーハの加工方法
DE102016110378B4 (de) * 2016-06-06 2023-10-26 Infineon Technologies Ag Entfernen eines Verstärkungsrings von einem Wafer
DE102016111629B4 (de) * 2016-06-24 2022-10-27 Infineon Technologies Ag Verfahren zum Herstellen einer Halbleitervorrichtung
JP2018101678A (ja) * 2016-12-20 2018-06-28 株式会社ディスコ 被加工物の加工方法
JP6770443B2 (ja) 2017-01-10 2020-10-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体ウェハ
JP7045811B2 (ja) * 2017-07-06 2022-04-01 リンテック株式会社 除去装置および除去方法
JP6955919B2 (ja) * 2017-07-06 2021-10-27 リンテック株式会社 除去装置および除去方法
JP2019016691A (ja) * 2017-07-06 2019-01-31 リンテック株式会社 除去装置および除去方法
KR102409260B1 (ko) * 2020-05-19 2022-06-17 주식회사 에이엘티 타이코 웨이퍼 링 제거장치 및 타이코 웨이퍼 링 제거방법
KR20220048938A (ko) 2020-10-13 2022-04-20 가부시기가이샤 디스코 레이저 가공 장치
CN112599413B (zh) * 2021-03-04 2021-05-14 成都先进功率半导体股份有限公司 一种晶圆芯片切割方法
CN113275769B (zh) * 2021-07-22 2021-09-21 南通智谷数控机械有限公司 一种智能控制清理毛边的海绵切割机
JP2023021607A (ja) * 2021-08-02 2023-02-14 株式会社Ｓｃｒｅｅｎホールディングス 光照射装置、および、光照射方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201067832Y (zh) * 2007-07-30 2008-06-04 深圳市大族激光科技股份有限公司 一种激光加工用的加工平台
TW201250922A (en) * 2010-10-29 2012-12-16 Disco Corp Wafer supporting plate and method for using wafer supporting plate
CN202861627U (zh) * 2012-09-21 2013-04-10 北京工业大学 大功率激光吸收装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6049888A (ja) * 1983-08-30 1985-03-19 Dainippon Printing Co Ltd レ−ザ−断裁装置
JPS61138489U (ko) * 1985-02-19 1986-08-28
US6955956B2 (en) * 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP5390740B2 (ja) 2005-04-27 2014-01-15 株式会社ディスコ ウェーハの加工方法
JP2008283025A (ja) * 2007-05-11 2008-11-20 Disco Abrasive Syst Ltd ウエーハの分割方法
JP5544228B2 (ja) * 2010-07-14 2014-07-09 株式会社ディスコ ウェーハの加工方法
EP2737970B1 (en) * 2011-07-28 2016-09-28 Mitsubishi Electric Corporation Laser machining device
JP5606412B2 (ja) * 2011-08-29 2014-10-15 富士フイルム株式会社 パターン形成装置、パターン形成方法及びパターン形成基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201067832Y (zh) * 2007-07-30 2008-06-04 深圳市大族激光科技股份有限公司 一种激光加工用的加工平台
TW201250922A (en) * 2010-10-29 2012-12-16 Disco Corp Wafer supporting plate and method for using wafer supporting plate
CN202861627U (zh) * 2012-09-21 2013-04-10 北京工业大学 大功率激光吸收装置

Also Published As

Publication number Publication date
JP6317935B2 (ja) 2018-04-25
CN104816100A (zh) 2015-08-05
SG10201500647RA (en) 2015-09-29
DE102015201833A1 (de) 2015-08-06
KR102175865B1 (ko) 2020-11-06
DE102015201833B4 (de) 2020-10-29
KR20150092705A (ko) 2015-08-13
MY181072A (en) 2020-12-17
CN104816100B (zh) 2019-09-06
TW201532182A (zh) 2015-08-16
JP2015147231A (ja) 2015-08-20

Similar Documents

Publication Publication Date Title
TWI637460B (zh) 保持台
JP6672053B2 (ja) ウェーハの加工方法
KR102409604B1 (ko) 가공 장치
TWI761544B (zh) 雷射加工裝置以及雷射加工方法
TWI574314B (zh) Wafer processing method
TWI751354B (zh) 切割裝置及晶圓的加工方法
TW201415547A (zh) 晶圓加工方法
JP2012049164A (ja) 発光デバイスの製造方法
JP6625854B2 (ja) 光デバイスウエーハの加工方法
US20160240424A1 (en) Chuck table of processing apparatus
TWI736760B (zh) 晶圓加工方法
JP6120644B2 (ja) 切削溝の検出方法
JP2015065209A (ja) ウェーハの分割方法
JP6290010B2 (ja) ウェーハの分割方法
JP2017041604A (ja) 光デバイスウエーハの加工方法
JP6576782B2 (ja) ウエーハの加工方法
JP2019197756A (ja) チップの製造方法
JP2020009864A (ja) 被加工物の研削方法
JP2019145665A (ja) ウエーハの分割方法
JP7208062B2 (ja) デバイスチップの形成方法
JP7358193B2 (ja) ウエーハの加工方法
JP2017076713A (ja) ウエーハの加工方法
TW202343558A (zh) 晶圓的製造方法
JP2021141210A (ja) チップの製造方法
JP2016201453A (ja) ウェーハの加工方法