TWI637460B - Holding table - Google Patents

Holding table Download PDF

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Publication number
TWI637460B
TWI637460B TW103145482A TW103145482A TWI637460B TW I637460 B TWI637460 B TW I637460B TW 103145482 A TW103145482 A TW 103145482A TW 103145482 A TW103145482 A TW 103145482A TW I637460 B TWI637460 B TW I637460B
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Taiwan
Prior art keywords
wafer
reinforcing portion
ring
shaped reinforcing
laser light
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TW103145482A
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Chinese (zh)
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TW201532182A (en
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木村早希
土屋利夫
出島健志
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迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
    • B23K37/0408—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work for planar work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

本發明之課題為在元件區域周圍形成有環狀補強部的晶圓上，在不使元件區域縮小的狀況下，安定地除去環狀補強部。解決手段是將用以保持將形成有複數個元件之元件區域和圍繞元件區域之外周剩餘區域形成於正面，並於對應外周剩餘區域的背面形成有環狀補強部的晶圓之保持台構成為：於保持台的頂面，在對應於環狀補強部和元件區域之邊界部的位置上形成有用以供雷射光線逸出的環狀餘隙槽，餘隙槽的溝底為錐形且形成有使雷射光線散射之微細的凹凸。 An object of the present invention is to remove a ring-shaped reinforcing portion in a stable manner on a wafer having a ring-shaped reinforcing portion formed around the element region without reducing the size of the element region. The solution is to form a holding table for holding a wafer on which a device region where a plurality of components are formed and a remaining region surrounding the device region are formed on the front surface, and a ring-shaped reinforcing portion is formed on the back surface corresponding to the remaining peripheral region. : On the top surface of the holding table, an annular clearance groove is formed at a position corresponding to the boundary portion between the annular reinforcement portion and the element area for the laser light to escape. The groove bottom of the clearance groove is tapered and Fine unevenness is formed to scatter the laser light.

Description

保持台 Holding table 發明領域 Field of invention

本發明是有關於一種從晶圓上將形成於元件區域周圍的環狀補強部除去之晶圓的加工方法中使用之保持台。 The present invention relates to a holding table used in a method of processing a wafer from a wafer by removing a ring-shaped reinforcing portion formed around a device region.

發明背景 Background of the invention

將IC、LSI等複數個元件形成於正面側之晶圓，是藉由切割裝置分割成一個個的元件，並被組裝在各種電子機器中而被廣泛地使用。為了謀求電子機器之小型化、輕量化等，會將晶圓的厚度變薄地形成為例如50μm~100μm。這種晶圓不但剛性降低還會產生翹曲，因此會有操作處理變困難，且在搬送等中發生破損之虞。於是，有藉由僅對與晶圓之形成有元件的元件區域相對應之背面進行磨削，而在對應於圍繞元件區域的外周剩餘區域之背面形成環狀補強部，以提高晶圓剛性的方法被提出(參照例如，專利文獻1)。 Wafers in which a plurality of components such as ICs and LSIs are formed on the front side are divided into individual components by a dicing device, and they are assembled in various electronic devices and widely used. In order to reduce the size and weight of electronic equipment, the thickness of the wafer is reduced to 50 μm to 100 μm. Such wafers not only have reduced rigidity but also warpage. Therefore, handling and handling may become difficult, and damage may occur during transportation or the like. Therefore, only the back surface corresponding to the element area where the element is formed on the wafer is ground, and a ring-shaped reinforcing portion is formed on the back surface corresponding to the remaining area of the outer periphery surrounding the element area to improve the rigidity of the wafer. A method has been proposed (see, for example, Patent Document 1).

且已有在沿著分割預定線分割形成有環狀補強部的晶圓之前，從晶圓上除去環狀補強部的方法被提出(參照例如，專利文獻2)。在專利文獻2所記載的方法中，是以 切削刀片將元件區域和環狀補強部(外周剩餘區域)之邊界部切斷，而將環狀補強部從晶圓切離。並且，可在去除環狀補強部後，藉由以切削刀片從正面側沿著分割預定線切削留下元件區域之晶圓，而將晶圓分割為一個個的元件。 In addition, a method of removing a ring-shaped reinforcing portion from a wafer before dividing a wafer having a ring-shaped reinforcing portion along a predetermined division line has been proposed (see, for example, Patent Document 2). The method described in Patent Document 2 uses The cutting insert cuts a boundary portion between the element region and the annular reinforcing portion (the remaining area on the outer periphery), and cuts off the annular reinforcing portion from the wafer. In addition, after removing the ring-shaped reinforcing portion, the wafer can be divided into individual elements by cutting the wafer with the element region left along the predetermined division line with a cutting insert from the front side.

先前技術文獻 Prior art literature 專利文獻 Patent literature

專利文獻1：日本專利特開2007-19461號公報 Patent Document 1: Japanese Patent Laid-Open No. 2007-19461

專利文獻2：日本專利特開2012-23175號公報 Patent Document 2: Japanese Patent Laid-Open No. 2012-23175

發明概要 Summary of invention

然而，專利文獻2所記載的方法中，元件區域中之晶圓的厚度越薄化，此薄化部分和環狀補強部之間的高低差就會變得越大。伴隨著這個情況，為了要避免刀片輪轂和環狀補強部的接觸，必須與高低差的量相應而將切削刀片的刀鋒伸出量變得比常規還大。當在切削刀片之刀鋒伸出量大的狀態下進行加工時，會對切削刀片施加過多的負荷，並有使得切削刀片發生蛇行、破損等之虞。雖然將刀片厚度加厚以防止蛇行或破損的作法也有被考慮，但是會有要以切削刀片變厚之量相應地將切削時的溝槽寬度變大，並將元件區域縮小的問題。 However, in the method described in Patent Document 2, the thinner the thickness of the wafer in the element region, the larger the height difference between the thinned portion and the annular reinforcing portion. With this situation, in order to avoid contact between the blade hub and the ring-shaped reinforcing portion, it is necessary to increase the amount of the blade edge of the cutting insert to be larger than conventional according to the amount of height difference. When machining is performed in a state where the cutting edge of the cutting insert has a large amount of protrusion, excessive load may be applied to the cutting insert, and the cutting insert may be bent or damaged. Although thickening the blade thickness to prevent hunting or breakage has been considered, there is a problem that the width of the groove during cutting is increased by the amount that the cutting blade becomes thicker, and the element area is reduced.

特別是，近年來，為了晶片尺寸的大型化和提升生產性而謀求晶圓的大口徑化。可以預測到的是，大口徑的晶圓，不只是外徑連厚度也會變大，因此會有藉由將元 件區域中之晶圓厚度薄化，而導致環狀補強部的高低差增加之情形。據此，會使切削刀片的刀鋒伸出量變得更大，且要從晶圓適當地除去環狀補強部會變困難。 In particular, in recent years, in order to increase the size of a wafer and increase productivity, a larger diameter of the wafer has been sought. It can be predicted that for large-caliber wafers, not only the outer diameter but also the thickness will become larger, so there will be The wafer thickness in the device area becomes thinner, which causes the height difference of the ring-shaped reinforcing portion to increase. As a result, the amount of extension of the cutting edge of the cutting insert becomes larger, and it becomes difficult to appropriately remove the annular reinforcing portion from the wafer.

本發明是有鑑於此種問題點而作成的，目的為提供可在元件區域周圍形成有環狀補強部的晶圓中，在不將元件區域縮小的情況下將環狀補強部安定除去之晶圓的加工方法中使用之保持台。 The present invention has been made in view of such a problem, and an object thereof is to provide a crystal in which a ring-shaped reinforcing portion can be stably removed without reducing the element area in a wafer in which a ring-shaped reinforcing portion is formed around the element area. Holder used in the circle processing method.

本發明之保持台是用以保持晶圓，該晶圓是將形成有複數個元件之元件區域和圍繞元件區域之外周剩餘區域形成於正面，並於對應外周剩餘區域的背面形成有環狀補強部，該保持台的特徵在於：於保持台的頂面，在對應於環狀補強部和元件區域之邊界部的位置上形成有用以供雷射光線逸出的環狀餘隙槽，餘隙槽的溝底為錐形且形成有使雷射光線散射之微細的凹凸。 The holding table of the present invention is used to hold a wafer. The wafer is formed on the front side of a device region where a plurality of elements are formed and a remaining region surrounding the periphery of the element region. The holding table is characterized in that a ring-shaped clearance groove is formed on the top surface of the holding table at a position corresponding to the boundary between the ring-shaped reinforcing portion and the element area, for the laser light to escape. The groove bottom of the groove is tapered and has fine unevenness that scatters laser light.

依據此構成，可藉由沿著元件區域和環狀補強部(外周剩餘區域)之邊界部對晶圓照射雷射光線，而使晶圓的元件區域和環狀補強部分離。此時，由於在餘隙槽的錐形溝底形成有微細的凹凸，在溝底被反射之雷射光線的反射光會從雷射光源偏離並且使反射光的強度變弱，而可抑制因為反射光所造成之雷射光源的破損。因為可以在不使用切削刀片的情形下使元件區域和環狀補強部分離，因此不需要像使用切削刀片進行分離的情形一般，還要考慮切削刀片的刀鋒伸出量和厚度。又，因為是以雷射光線的照射 來加工晶圓，因此可將加工區域抑制在最小限度而不會使元件區域縮小。又，即使在伴隨著晶圓的大口徑化而將厚度變大的情況下，也可安定地除去環狀補強部。 According to this configuration, by irradiating the wafer with laser light along a boundary portion between the element region and the ring-shaped reinforcing portion (the remaining area on the outer periphery), the element region of the wafer and the ring-shaped reinforcing portion can be separated. At this time, since the minute grooves are formed on the tapered groove bottom of the clearance groove, the reflected light of the laser light reflected at the groove bottom may deviate from the laser light source and weaken the intensity of the reflected light. Damage to the laser light source caused by reflected light. Since the element area and the ring-shaped reinforcing portion can be separated without using a cutting insert, it is not necessary to consider the amount and thickness of the cutting edge of the cutting insert, as in the case of using a cutting insert for separation. Also, because it is irradiated with laser light To process the wafer, so that the processing area can be minimized without shrinking the component area. In addition, even when the thickness is increased with the increase in the diameter of the wafer, the ring-shaped reinforcing portion can be removed stably.

又，本發明之上述保持台是於利用雷射光線之照射而在該晶圓背面中將磨削元件區域的背面側而形成在外周剩餘區域背面側的環狀補強部除去時使用。 The holding table of the present invention is used when the ring-shaped reinforcing portion formed on the back surface side of the grinding element region and on the back surface side of the outer peripheral region is removed from the wafer back surface by the irradiation of laser light.

根據本發明，藉由在元件區域的周圍形成有環狀補強部之晶圓上，沿著元件區域和環狀補強部之邊界部照射雷射光線，可以在不使元件區域縮小的情況下，將環狀補強部安定由晶圓切離。 According to the present invention, by irradiating laser light along a boundary portion between the element region and the ring-shaped reinforcing portion on a wafer having a ring-shaped reinforcing portion formed around the element region, it is possible to reduce the size of the element region, The ring-shaped reinforcing portion is stably separated from the wafer.

1‧‧‧雷射加工裝置 1‧‧‧laser processing device

11‧‧‧基台 11‧‧‧ abutment

12‧‧‧立壁部 12‧‧‧ standing wall

13‧‧‧臂部 13‧‧‧arm

2‧‧‧雷射光線照射手段 2‧‧‧Laser light irradiation means

21‧‧‧加工頭 21‧‧‧Processing head

3‧‧‧攝像手段 3‧‧‧ camera means

4‧‧‧保持台移動機構 4‧‧‧ holding station moving mechanism

41、43‧‧‧導軌 41, 43‧‧‧ rail

42‧‧‧X軸滑台 42‧‧‧X-axis slide table

44‧‧‧Y軸滑台 44‧‧‧Y-axis slide table

45、46‧‧‧滾珠螺桿 45, 46‧‧‧ Ball Screw

47、48‧‧‧驅動馬達 47, 48‧‧‧ drive motor

49‧‧‧θ滑台 49‧‧‧θ Slide Table

5、74‧‧‧保持台 5, 74‧‧‧ holding table

51‧‧‧保持面 51‧‧‧ keep face

52‧‧‧外周緣部 52‧‧‧outer periphery

53‧‧‧餘隙槽 53‧‧‧Gap

54‧‧‧餘隙槽溝底 54‧‧‧Gap bottom

55‧‧‧餘隙槽內側面 55‧‧‧Inner side of clearance slot

56‧‧‧餘隙槽外側面 56‧‧‧ Outer side of clearance slot

57、58‧‧‧吸引溝 57, 58‧‧‧ Attraction channel

60‧‧‧夾具部 60‧‧‧Jig Department

71‧‧‧搬送手段 71‧‧‧ transport means

72‧‧‧吸附墊 72‧‧‧ Adsorption Pad

73‧‧‧切削裝置 73‧‧‧ cutting device

75‧‧‧切削刀片 75‧‧‧ cutting insert

80‧‧‧晶圓正面 80‧‧‧ wafer front

81‧‧‧晶圓背面 81‧‧‧ back of wafer

82‧‧‧分割預定線 82‧‧‧ divided scheduled line

83‧‧‧元件區域 83‧‧‧component area

84‧‧‧外周剩餘區域 84‧‧‧External area

85‧‧‧環狀補強部 85‧‧‧Circular reinforcement

86‧‧‧邊界部 86‧‧‧Border

87‧‧‧環狀補強部頂面 87‧‧‧ Top surface of annular reinforcement

88‧‧‧環狀補強部內周面 88‧‧‧ Inner peripheral surface of annular reinforcement

89‧‧‧環狀補強部外周面 89‧‧‧ outer peripheral surface of annular reinforcement

90‧‧‧外周邊緣 90‧‧‧ peripheral edge

91‧‧‧點徑 91‧‧‧point trail

92‧‧‧雷射加工溝 92‧‧‧laser processing trench

F1、F2‧‧‧框架 F1, F2‧‧‧ frame

T1、T2‧‧‧保持膠帶 T1, T2‧‧‧ holding tape

W‧‧‧晶圓 W‧‧‧ Wafer

X1、X2、X3、X4‧‧‧距離 X1, X2, X3, X4‧‧‧ distance

圖1是雷射加工裝置的立體圖。 FIG. 1 is a perspective view of a laser processing apparatus.

圖2A及圖2B是保持台之說明圖。 2A and 2B are explanatory diagrams of a holding table.

圖3所示為晶圓黏貼步驟之一例的圖。 FIG. 3 is a diagram showing an example of a wafer bonding step.

圖4所示為校準步驟之一例的圖。 Figure 4 shows an example of a calibration procedure.

圖5A~圖5C是顯示環狀補強部分離步驟之一例的圖。 5A to 5C are diagrams showing an example of a step of separating the annular reinforcing portion.

圖6是顯示環狀補強部除去步驟之一例的圖。 FIG. 6 is a diagram showing an example of a step of removing the annular reinforcing portion.

圖7是顯示元件區域支撐步驟之一例的圖。 FIG. 7 is a diagram showing an example of a device region supporting step.

圖8是顯示分割步驟之一例的圖。 FIG. 8 is a diagram showing an example of a division step.

圖9A及圖9B是說明保持台之餘隙槽的模式圖。 9A and 9B are schematic diagrams illustrating a clearance groove of a holding table.

用以實施發明之形態 Forms used to implement the invention

以下，參照附加圖式，說明本實施形態之晶圓的加工方法。本實施形態之晶圓的加工方法，是對在晶圓的背面僅留下外周部分，且只對其內側進行磨削而形成之所謂的TAIKO晶圓實施，並將TAIKO晶圓之外周部除去的方法。圖1是在本實施形態之晶圓的加工方法中使用之雷射加工裝置的立體圖。再者，雷射加工裝置，只要是可以在本實施形態之晶圓的加工方法中使用的均可，並不限定於圖1所示之構成。 Hereinafter, a method for processing a wafer according to this embodiment will be described with reference to additional drawings. The wafer processing method of this embodiment is a so-called TAIKO wafer formed by leaving only the outer peripheral portion on the back surface of the wafer and grinding only the inner side, and removing the outer peripheral portion of the TAIKO wafer. Methods. FIG. 1 is a perspective view of a laser processing apparatus used in a wafer processing method according to this embodiment. The laser processing apparatus is not limited to the configuration shown in FIG. 1 as long as it can be used in the wafer processing method of this embodiment.

如圖1所示，雷射加工裝置1是構成為，使照射雷射光線之雷射光線照射手段2和保持晶圓W之保持台5相對移動而加工晶圓W。晶圓W是形成為略圓板狀，藉由排列在正面80上之格子狀的分割預定線82而劃分成複數個區域(參照圖8)。在晶圓W的中央，在以分割預定線82所劃分之各區域中形成有元件。晶圓W的正面80(參照圖2B)，被區分為形成有複數個元件的元件區域83，和圍繞元件區域83的外周剩餘區域84。 As shown in FIG. 1, the laser processing apparatus 1 is configured to process the wafer W by relatively moving the laser beam irradiation means 2 radiating the laser beam and the holding table 5 holding the wafer W. The wafer W is formed in a substantially circular plate shape, and is divided into a plurality of regions by a grid-like division line 82 arranged on the front surface 80 (see FIG. 8). In the center of the wafer W, an element is formed in each region divided by the planned division line 82. The front surface 80 (see FIG. 2B) of the wafer W is divided into an element region 83 in which a plurality of elements are formed, and an outer peripheral region 84 surrounding the element region 83.

晶圓W的背面81，如圖1及圖2B所示，只將對應元件區域83之中央部分磨削加工成凹狀，在對應外周剩餘區域84的部分則形成有凸狀的環狀補強部85。藉此，僅晶圓W的中央部分被薄化，而可藉由環狀補強部85提升晶圓W的剛性。因此，在晶圓W的元件區域83被薄化的同時，可藉由環狀補強部85抑制晶圓W的翹曲而防止搬送時的破損等。再者，晶圓W，可以是矽、砷化鎵等的半導體晶圓， 也可以是陶瓷、玻璃、藍寶石類的光裝置晶圓。 As shown in FIG. 1 and FIG. 2B, the back surface 81 of the wafer W is ground to a concave shape only at the central portion corresponding to the element region 83, and a convex annular reinforcing portion is formed at a portion corresponding to the remaining peripheral region 84. 85. Thereby, only the central portion of the wafer W is thinned, and the rigidity of the wafer W can be improved by the ring-shaped reinforcing portion 85. Therefore, while the element region 83 of the wafer W is thinned, the warp of the wafer W can be suppressed by the ring-shaped reinforcing portion 85 to prevent breakage or the like during transportation. In addition, the wafer W may be a semiconductor wafer such as silicon or gallium arsenide. It may also be a ceramic, glass, or sapphire optical device wafer.

又，晶圓W的正面80上黏貼有保持膠帶T1，並以在保持膠帶T1之外周黏貼上具有開口部之環狀框架F1的狀態被搬送至雷射加工裝置1。晶圓W上，在元件區域83和外周剩餘區域84的邊界部86(參照圖2B)上因環狀補強部85而形成有高低差。由於在使用切削刀片的機械切割(Mechanical dicing)上，會因為刀片輪轂干涉到環狀補強部85而難以適當加工，因此在本實施形態中是做成以燒蝕加工來將環狀補強部85切離晶圓W。 Further, a holding tape T1 is stuck on the front surface 80 of the wafer W, and is conveyed to the laser processing apparatus 1 in a state where a ring-shaped frame F1 having an opening portion is stuck on the outer periphery of the holding tape T1. On the wafer W, the stepped portion 85 is formed on the boundary portion 86 (see FIG. 2B) of the element region 83 and the remaining peripheral region 84 by the ring-shaped reinforcing portion 85. In mechanical dicing using a cutting blade, it is difficult to properly process the blade hub because it interferes with the annular reinforcing portion 85. Therefore, in this embodiment, the annular reinforcing portion 85 is formed by ablation processing. Cut off wafer W.

如圖1所示，雷射加工裝置1的基台11頂面上，設置有使保持台5在X軸方向及Y軸方向上移動之保持台移動機構4。保持台移動機構4具有配置於基台11上之平行於X軸方向的一對導軌41，和可滑動地設置在一對導軌41上之馬達驅動的X軸滑台42。又，保持台移動機構4具有配置於X軸滑台42頂面且平行於Y軸方向的一對導軌43，和可滑動地設置在一對導軌43上之馬達驅動的Y軸滑台44。 As shown in FIG. 1, a holding table moving mechanism 4 for moving the holding table 5 in the X-axis direction and the Y-axis direction is provided on the top surface of the base table 11 of the laser processing apparatus 1. The holding table moving mechanism 4 includes a pair of guide rails 41 arranged on the base table 11 parallel to the X-axis direction, and a motor-driven X-axis slide table 42 slidably provided on the pair of guide rails 41. The holding table moving mechanism 4 includes a pair of guide rails 43 arranged on the top surface of the X-axis slide table 42 and parallel to the Y-axis direction, and a motor-driven Y-axis slide table 44 slidably provided on the pair of guide rails 43.

又，X軸滑台42及Y軸滑台44的背面側，分別形成有圖未示之螺帽部，於這些螺帽部中螺合有滾珠螺桿45、46。並且，藉由將連結到滾珠螺桿45、46的其中一端部之驅動馬達47、48旋轉驅動，就可沿著導軌41、43在X軸方向上和Y軸方向上移動保持台5。Y軸滑台44的頂部設置有θ滑台49，θ滑台49的頂部設置有用以保持晶圓W的保持台5。 In addition, a nut portion (not shown) is formed on the back side of the X-axis slide table 42 and the Y-axis slide table 44, and ball screws 45 and 46 are screwed into these nut portions. In addition, by driving the drive motors 47 and 48 connected to one end portions of the ball screws 45 and 46, the holding table 5 can be moved along the guide rails 41 and 43 in the X-axis direction and the Y-axis direction. A θ slide table 49 is provided on the top of the Y-axis slide table 44, and a holding table 5 for holding the wafer W is provided on the top of the θ slide table 49.

保持台5，以不鏽鋼等金屬材料形成為圓板狀， 頂面具有用以保持晶圓W之保持面51。保持面51上形成有複數條吸引溝57、58(參照圖2A)，並透過在吸引溝57、58產生之負壓吸附保持晶圓W。又，於保持台5的周圍，設置有空氣驅動式的4個夾具部60，以各夾具部60挾持固定晶圓W周圍的框架F1。保持台5的後方，直立設置有立壁部12。從立壁部12突出有臂部13，於臂部13上將雷射光線照射手段2設置成與保持台5相面對。 The holding table 5 is formed into a disc shape from a metal material such as stainless steel. The top surface has a holding surface 51 for holding the wafer W. A plurality of suction grooves 57 and 58 are formed on the holding surface 51 (see FIG. 2A), and the wafer W is sucked and held by the negative pressure generated in the suction grooves 57 and 58. In addition, four air-driven clamp parts 60 are provided around the holding table 5, and each clamp part 60 holds and fixes the frame F1 around the wafer W. A rear wall portion 12 is provided upright behind the holding table 5. An arm portion 13 protrudes from the standing wall portion 12, and the laser light irradiation means 2 is provided on the arm portion 13 so as to face the holding table 5.

雷射光線照射手段2具有設置於臂部13前端之加工頭21。臂部13及加工頭21內設置有雷射光線照射手段2的光學系統零件。加工頭21透過聚光鏡將由圖未示之發射器發射的雷射光線聚光，照射到保持於保持台5上的晶圓W上。此時，雷射光線對晶圓W具有吸收性之波長，且可藉由光學系統零件調整成聚光在晶圓W內側之保持膠帶T1的內部。藉由此雷射光線的照射而對晶圓W進行燒蝕加工。 The laser light irradiation means 2 includes a processing head 21 provided at a front end of the arm portion 13. An optical system component of the laser beam irradiation means 2 is provided in the arm portion 13 and the processing head 21. The processing head 21 condenses the laser light emitted from an emitter (not shown) through a condenser lens, and irradiates the laser light W held on the holding table 5. At this time, the laser light has an absorptive wavelength to the wafer W, and it can be adjusted by the optical system parts to condense light inside the holding tape T1 inside the wafer W. The wafer W is subjected to ablation processing by irradiation with the laser light.

再者，所謂的燒蝕，意指當雷射光束的照射強度在預定之加工閾值以上時，會在固體表面轉換為電子的、熱的、光科學的及力學的能量，其結果，使中性原子、分子、正負離子、自由基、團簇(cluster)、電子、光急遽地釋放出，而使固體表面被蝕刻的現象。 Furthermore, the so-called ablation means that when the irradiation intensity of the laser beam is above a predetermined processing threshold, it will be converted into electronic, thermal, photo-scientific and mechanical energy on the solid surface. Sexual atoms, molecules, positive and negative ions, free radicals, clusters, electrons, and light are rapidly released, and the solid surface is etched.

又，在雷射光線照射手段2的側邊，設置有拍攝晶圓W外周邊緣90(參照圖2B)的攝像手段3。攝像手段3可對晶圓W的外周邊緣90照射攝像光，並將其反射光攝入而拍攝晶圓W的外周邊緣90。可透過攝像手段3拍攝晶圓W之外周邊緣90的任意3處，並對各拍攝影像施以影像處理以檢測 出外周邊緣90之3點座標。根據此外周邊緣90的座標計算出晶圓W的中心，並以算出的晶圓W的中心為基準實施校準。 An imaging device 3 for imaging the outer peripheral edge 90 (see FIG. 2B) of the wafer W is provided on the side of the laser light irradiation device 2. The imaging means 3 can irradiate the outer peripheral edge 90 of the wafer W with imaging light, and absorb the reflected light to take an image of the outer peripheral edge 90 of the wafer W. Any three locations on the outer peripheral edge 90 of the wafer W can be captured by the imaging means 3, and image processing is performed on each captured image to detect Go to the 3 o'clock coordinate of the peripheral edge. The center of the wafer W is calculated based on the coordinates of the outer peripheral edge 90, and calibration is performed based on the calculated center of the wafer W.

在如此所構成之雷射加工裝置1中，是在實施校準後，將加工頭21定位於元件區域83和環狀補強部85(外周剩餘區域84)的邊界部86(參照圖5A)。並且，可藉由在由加工頭21朝向晶圓W照射雷射光線的狀態下使保持台5旋轉，而將晶圓W和保持膠帶T1一起切斷。藉此，可將框架F1和環狀補強部85一起從晶圓W上切離。之後，使透過保持膠帶T1支撐在框架F1上的環狀補強部85和框架F1一起脫離保持台5，而從晶圓W上除去環狀補強部85(參照圖6)。 In the laser processing apparatus 1 configured as described above, after the calibration is performed, the processing head 21 is positioned at the boundary portion 86 (see FIG. 5A) of the element region 83 and the annular reinforcing portion 85 (the outer peripheral remaining region 84). In addition, the wafer W and the holding tape T1 can be cut together by rotating the holding table 5 while the laser beam is irradiated toward the wafer W from the processing head 21. Thereby, the frame F1 and the ring-shaped reinforcing portion 85 can be cut off from the wafer W together. Thereafter, the ring-shaped reinforcing portion 85 supported on the frame F1 by the holding tape T1 is detached from the holding table 5 together with the frame F1, and the ring-shaped reinforcing portion 85 is removed from the wafer W (see FIG. 6).

參照圖2A及圖2B，詳細說明本實施形態之保持台5。圖2A顯示本實施形態之保持台5的立體圖，圖2B顯示本實施形態之保持台5的剖面圖。再者，在圖2B中，是以兩點鏈線顯示保持於保持台5上的晶圓。 The holding table 5 according to this embodiment will be described in detail with reference to Figs. 2A and 2B. FIG. 2A shows a perspective view of the holding table 5 according to this embodiment, and FIG. 2B shows a cross-sectional view of the holding table 5 according to this embodiment. In addition, in FIG. 2B, the wafer held on the holding table 5 is shown by a two-dot chain line.

如圖2A及圖2B所示，保持台5的頂面，形成有燒蝕加工時用以供雷射光線放出之環狀的餘隙槽53。餘隙槽53對應於晶圓W之元件區域83和環狀補強部85(外周剩餘區域84)的邊界部86，且沿著保持台5的外周而形成。保持台5頂面上之餘隙槽53的半徑方向內側，成為保持晶圓W的保持面51，且對應於晶圓W的元件區域83。保持面51上，形成有在保持台5的中心垂直相交之十字狀的吸引溝57，和以十字狀之吸引溝57之交點為中心的同心圓狀之環狀的複數個吸引溝58。 As shown in FIGS. 2A and 2B, a ring-shaped clearance groove 53 is formed on the top surface of the holding table 5 for laser light emission during ablation processing. The clearance groove 53 corresponds to the boundary portion 86 of the element region 83 of the wafer W and the annular reinforcing portion 85 (the outer peripheral remaining region 84), and is formed along the outer periphery of the holding table 5. The radially inner side of the clearance groove 53 on the top surface of the holding table 5 is a holding surface 51 holding the wafer W, and corresponds to the element region 83 of the wafer W. The holding surface 51 is formed with a cross-shaped suction groove 57 perpendicularly intersecting at the center of the holding table 5 and a plurality of concentric circular ring-shaped suction grooves 58 centered on the intersection of the cross-shaped suction groove 57.

十字狀之吸引溝57及環狀之吸引溝58是相通而形成，透過保持台5內之吸引路59連接到圖未示之吸引源。藉由產生在吸引溝57、58上的負壓，而將晶圓W透過保持膠帶T1吸引保持在保持面51上。又，在保持台5的頂面上，是將餘隙槽53之半徑方向外側的外周緣部52形成為和保持面51為相同高度，支撐晶圓W外側之保持膠帶T1。藉此，就可以在保持面51和外周緣部52之間將保持膠帶T1維持在水平狀態，且不會有使環狀補強部85朝向餘隙槽53內(向下方)彎曲之情形，而能夠防止雷射光線照射位置的偏移。 The cross-shaped suction groove 57 and the ring-shaped suction groove 58 are formed in communication with each other, and are connected to a suction source (not shown) through a suction path 59 in the holding table 5. The wafer W is sucked and held on the holding surface 51 through the holding tape T1 by the negative pressure generated in the suction grooves 57 and 58. In addition, on the top surface of the holding table 5, a holding tape T1 is formed on the outer peripheral edge portion 52 of the clearance groove 53 on the outside in the radial direction so as to have the same height as the holding surface 51 to support the wafer W outside. Thereby, the holding tape T1 can be maintained in a horizontal state between the holding surface 51 and the outer peripheral edge portion 52, and the ring-shaped reinforcing portion 85 cannot be bent toward the clearance groove 53 (downward), and It is possible to prevent the position of the laser light from being shifted.

餘隙槽53的溝底54是傾斜成朝向保持台5的中心變深。溝底54之錐形表面上，以噴砂等形成有使雷射光線散射之微細的凹凸。在此溝底54被反射之雷射光線的反射光，會從雷射光源偏離並且使反射光的強度變弱，而可抑制因為反射光所造成之雷射光源的破損。詳細內容會在後續說明，進行校準時，在溝底54被反射之攝像光的反射光，會從攝像手段3(參照圖4)偏離並且使反射光的強度變弱，使在拍攝影像中顯示晶圓W的外周邊緣90的明暗對比變明確。 The groove bottom 54 of the clearance groove 53 is inclined to become deeper toward the center of the holding table 5. On the tapered surface of the groove bottom 54, fine irregularities that scatter laser light are formed by sandblasting or the like. The reflected light of the laser light reflected at the groove bottom 54 deviates from the laser light source and weakens the intensity of the reflected light, and the damage of the laser light source caused by the reflected light can be suppressed. The details will be described later. During calibration, the reflected light of the imaging light reflected at the groove bottom 54 will deviate from the imaging means 3 (see FIG. 4) and weaken the intensity of the reflected light, so that it will be displayed in the captured image. The light-dark contrast of the peripheral edge 90 of the wafer W becomes clear.

本實施形態之晶圓的加工方法中，在以上述之雷射加工裝置由晶圓除去環狀補強部之後，可將晶圓的元件區域分割成一個個的晶片。以下，參照圖3到圖8，說明本實施形態之晶圓的加工方法。圖3是晶圓黏貼步驟，圖4是校準步驟，圖5A~圖5C是環狀補強部分離步驟，圖6是環狀補強部除去步驟，圖7是元件區域支撐步驟，圖8是分割步 驟之分別各舉一例而表示之圖。圖5A是將由側面觀看環狀補強部分離步驟的圖，圖5B是將圖5A的局部放大圖，圖5C是將由上方觀看環狀補強部分離步驟的圖各自顯示。 In the wafer processing method of this embodiment, after removing the ring-shaped reinforcing portion from the wafer by the laser processing apparatus described above, the element region of the wafer can be divided into individual wafers. Hereinafter, a wafer processing method according to this embodiment will be described with reference to FIGS. 3 to 8. 3 is a wafer sticking step, FIG. 4 is a calibration step, FIGS. 5A to 5C are a step of separating a ring-shaped reinforcing portion, FIG. 6 is a step of removing a ring-shaped reinforcing portion, FIG. 7 is a step of supporting a component region, and FIG. 8 is a dividing step The steps are shown as examples. FIG. 5A is a diagram showing a step of separating the ring-shaped reinforcing portion viewed from the side, FIG. 5B is a partially enlarged view of FIG. 5A, and FIG. 5C is a diagram showing the step of separating the ring-shaped reinforcing portion viewed from above.

如圖3所示，首先，實施晶圓黏貼步驟。在晶圓黏貼步驟中，是將晶圓W收容於框架F1的開口部，並將保持膠帶T1黏貼在晶圓W的正面80及框架F1上。藉此，在環狀補強部85朝向上方的狀態下，晶圓W會透過保持膠帶T1被支撐在框架F1上。晶圓W是以透過保持膠帶T1被支撐在框架F1內側的狀態被搬入上述的雷射加工裝置1(參照圖1)。又，晶圓黏貼步驟，可藉由作業員的手工作業實施，也可以藉由圖未示之膠帶貼片機實施。 As shown in FIG. 3, first, a wafer bonding step is performed. In the wafer sticking step, the wafer W is housed in the opening portion of the frame F1, and the holding tape T1 is stuck on the front surface 80 of the wafer W and the frame F1. With this, in a state where the ring-shaped reinforcing portion 85 faces upward, the wafer W is supported on the frame F1 through the holding tape T1. The wafer W is carried into the laser processing apparatus 1 (see FIG. 1) in a state where the wafer W is supported inside the frame F1 by the holding tape T1. In addition, the wafer sticking step may be performed by a manual operation of an operator, or may be performed by a tape mounter (not shown).

如圖4所示，在晶圓黏貼步驟之後，實施校準步驟。在校準步驟中，是將支撐於框架F1上的晶圓W保持於保持台5保持面51上，並藉由夾具部60挾持固定框架F1。並且，將攝像手段3定位於晶圓W的環狀補強部85的上方，並透過攝像手段3對晶圓W的外周邊緣90進行拍攝。此時，是藉由從攝像手段3對晶圓W的外周邊緣90周邊照射攝像光，並藉由將外周邊緣90周邊的反射光攝入而生成拍攝影像。 As shown in FIG. 4, after the wafer bonding step, a calibration step is performed. In the calibration step, the wafer W supported on the frame F1 is held on the holding surface 51 of the holding table 5, and the fixed frame F1 is held by the clamp portion 60. Then, the imaging means 3 is positioned above the annular reinforcing portion 85 of the wafer W, and the outer peripheral edge 90 of the wafer W is imaged by the imaging means 3. At this time, the imaging light is generated by irradiating the periphery of the peripheral edge 90 of the wafer W with the imaging means 3, and the reflected light around the peripheral edge 90 is taken in to generate a captured image.

於外周邊緣90的內側存在有環狀補強部85之水平頂面87，來自攝像手段3的落射光(攝像光)，會在環狀補強部85的頂面87反射(暈光作用)而被攝入攝像手段3。另一方面，外周邊緣90的外側存在有餘隙槽53，來自攝像手段3的落射光，會穿過保持膠帶T1在餘隙槽53之錐形溝底54反射。藉此，可使在溝底54被反射的光，朝向晶圓W的中心 並且藉由溝底54的微細凹凸而散射。據此，在外周邊緣90的外側反射的反射光，就會變得難以被攝入至攝像手段3。 A horizontal top surface 87 of the ring-shaped reinforcing portion 85 exists on the inner side of the outer peripheral edge 90. Epigenetic light (camera light) from the imaging means 3 is reflected (halo effect) on the top surface 87 of the ring-shaped reinforcing portion 85 and is captured. Intake camera means 3. On the other hand, there is a clearance groove 53 on the outside of the peripheral edge 90, and the incident light from the imaging means 3 is reflected by the tapered groove bottom 54 of the clearance groove 53 through the holding tape T1. Accordingly, the light reflected at the trench bottom 54 can be directed toward the center of the wafer W. And it scatters by the fine unevenness of the groove bottom 54. As a result, it becomes difficult for the reflected light reflected outside the peripheral edge 90 to be taken into the imaging means 3.

在外周邊緣90周邊的拍攝影像中，使反射光攝入至攝像手段3的外周邊緣90的內側會顯示變亮，而難以使反射光攝入至攝像手段3的外周邊緣90的外側會顯示變暗。據此，可將晶圓W之外周邊緣90中的明暗對比變明確，而可正確地辨識外周邊緣90。同樣地進行，以在晶圓W之複數個位置拍攝外周邊緣90，並根據複數個拍攝影像而施以各種影像處理而檢測出外周邊緣90的座標。再根據複數個外周邊緣90的位置座標算出晶圓W的中心而實施校準。 In the captured image around the peripheral edge 90, the inside of the peripheral edge 90 where the reflected light is taken in to the imaging means 3 appears brighter, but it is difficult to cause the reflected light to be taken in to the outside of the peripheral edge 90 of the imaging means 3. dark. Accordingly, the light-dark contrast in the peripheral edge 90 of the wafer W can be clarified, and the peripheral edge 90 can be accurately identified. Similarly, the peripheral edge 90 is photographed at a plurality of positions on the wafer W, and various image processing is performed based on the plurality of captured images to detect the coordinates of the peripheral edge 90. Then, the center of the wafer W is calculated based on the position coordinates of the plurality of peripheral edges 90, and calibration is performed.

如圖5A到圖5C所示，校準步驟之後實施環狀補強部分離步驟。在環狀補強部分離步驟中，會實施在元件區域83和環狀補強部85(外周剩餘區域84)之間的邊界部86形成雷射加工溝92的第一加工步驟。在第一加工步驟中，是將元件區域83和環狀補強部85之間的邊界部86定位在加工頭21正下方。並且，會在調整雷射光線的聚光點位置及點徑91之後，朝向晶圓W的元件區域83和環狀補強部85之間的邊界部86，以預定的點徑91照射虛線所示之雷射光線。 As shown in FIG. 5A to FIG. 5C, the step of separating the annular reinforcing portion is performed after the calibration step. In the ring-shaped reinforcing portion separation step, the first processing step of forming the laser processing groove 92 at the boundary portion 86 between the element region 83 and the ring-shaped reinforcing portion 85 (the outer peripheral remaining area 84) is performed. In the first processing step, the boundary portion 86 between the element region 83 and the annular reinforcing portion 85 is positioned directly below the processing head 21. In addition, after adjusting the spot position and the spot diameter 91 of the laser light, the boundary portion 86 between the element region 83 of the wafer W and the ring-shaped reinforcing portion 85 is irradiated with a predetermined spot diameter 91 as indicated by a dotted line. Laser light.

並且，藉由使保持台5在受到雷射光線照射的狀態下旋轉，以藉虛線所示之雷射光線的點徑91(參照圖5C)將元件區域83和環狀補強部85的邊界部86除去。此時，雷射光線會貫穿晶圓W及保持膠帶T1而在餘隙槽53的溝底54朝向保持台5的中心反射。又，因為溝底54設置有微細的凹 凸，故雷射光線會散射而使強度變弱。因此，在溝底54反射的雷射光線會變得難以直接返回到加工頭21，且即使假設反射的雷射光線會返回到加工頭21內，也會因為強度降低而不會對雷射光源造成損傷。 Further, by rotating the holding table 5 in a state irradiated with laser light, a boundary portion between the element region 83 and the ring-shaped reinforcing portion 85 is obtained by using the spot diameter 91 (see FIG. 5C) of the laser light indicated by a dotted line. 86 Removed. At this time, the laser light passes through the wafer W and the holding tape T1 and is reflected at the groove bottom 54 of the clearance groove 53 toward the center of the holding table 5. Also, because the groove bottom 54 is provided with a fine depression Convex, so the laser light will scatter and weaken the intensity. Therefore, the laser light reflected at the trench bottom 54 becomes difficult to return directly to the processing head 21, and even if it is assumed that the reflected laser light returns to the processing head 21, it will not affect the laser light source due to the decrease in intensity. Cause damage.

如此進行，即可透過第一加工步驟，將元件區域83與環狀補強部85的邊界部86和保持膠帶T1一起切斷而形成雷射加工溝92。然而，此雷射加工溝92的溝寬狹窄，恐有被燒蝕加工所產生之碎屑堵塞之虞。於是，在第一加工步驟之後，會實施將雷射加工溝92拓寬成使環狀補強部85和元件區域83分離的第二加工步驟。如圖5B及圖5C所示，在第二加工步驟中，是使加工頭21(雷射光線照射手段2)從第一加工步驟中以虛線所示之雷射光線照射的位置朝晶圓的半徑方向僅移動比雷射光線之預定的點徑91還小的距離。 In this way, the laser processing groove 92 can be formed by cutting the boundary portion 86 of the element region 83 and the annular reinforcing portion 85 together with the holding tape T1 through the first processing step. However, the groove width of the laser processing groove 92 is narrow, and there is a possibility that the laser processing groove 92 may be blocked by debris generated by ablation processing. Therefore, after the first processing step, a second processing step of widening the laser processing groove 92 to separate the annular reinforcing portion 85 from the element region 83 is performed. As shown in FIGS. 5B and 5C, in the second processing step, the processing head 21 (laser light irradiation means 2) is directed toward the wafer from the position irradiated with the laser light shown by the dotted line in the first processing step. The radial direction moves only a distance smaller than the predetermined spot diameter 91 of the laser ray.

並且，可藉由使保持台5在受到點鏈線所示之雷射光線照射的狀態下旋轉，而以雷射光線的點徑91將元件區域83和環狀補強部85的邊界部86除去。此時之雷射光線的點徑91會部分重疊於第一加工步驟中所形成之雷射加工溝92。因此，可除去殘留在雷射加工溝92內之碎屑，而將雷射加工溝92的溝寬少許地拓寬。如果透過這兩次雷射加工，環狀補強部85和元件區域83仍然沒有分離時，就再次實施第二加工步驟。 Further, by rotating the holding table 5 in a state of being irradiated with laser light shown by the dotted chain line, the boundary portion 86 of the element region 83 and the ring-shaped reinforcing portion 85 can be removed at the point diameter 91 of the laser light. . The spot diameter 91 of the laser light at this time partially overlaps the laser processing groove 92 formed in the first processing step. Therefore, the debris remaining in the laser processing groove 92 can be removed, and the groove width of the laser processing groove 92 can be slightly widened. If through the two laser processes, the ring-shaped reinforcing portion 85 and the element region 83 are still not separated, the second processing step is performed again.

第二加工步驟會重複進行至使雷射加工溝92被充分拓寬而將晶圓W及保持膠帶T1完全分離為止。如此， 在環狀補強部分離步驟中，即使在第一加工步驟沒有將環狀補強部85從晶圓W切離，仍可藉由重複第二加工步驟，以將環狀補強部85從晶圓W切離。在本實施形態的第一、第二加工步驟中，是設定成例如，雷射光線的點徑為90μm，雷射加工的線間隔(分度)為0.015μm，並實施每1條線2來回趟(通過4次)的雷射加工。 The second processing step is repeated until the laser processing trench 92 is sufficiently widened to completely separate the wafer W and the holding tape T1. in this way, In the ring-shaped reinforcing portion separation step, even if the ring-shaped reinforcing portion 85 is not cut off from the wafer W in the first processing step, the ring-shaped reinforcing portion 85 can still be separated from the wafer W by repeating the second processing step. Cut off. In the first and second processing steps of this embodiment, for example, the spot diameter of the laser light is set to 90 μm, and the line interval (division) of the laser processing is 0.015 μm. Laser processing (4 passes).

如圖6所示，在環狀補強部分離步驟之後，實施環狀補強部除去步驟。在環狀補強部除去步驟中，可將透過夾具部60形成之框架F1的挾持固定解除，且將搬送手段71定位於保持台5的上方。並且，以搬送手段71的吸附墊72保持框架F1，且使透過保持膠帶T1被支撐在框架F1上之環狀補強部85和框架F1一起脫離保持台5。藉此，可在保持台5上，將環狀補強部85從晶圓W除去，僅留下晶圓W的元件區域83。除去了環狀補強部85的晶圓W則被從雷射加工裝置1(參照圖1)搬出。 As shown in FIG. 6, after the ring-shaped reinforcing portion separation step, the ring-shaped reinforcing portion removal step is performed. In the step of removing the ring-shaped reinforcing portion, the holding of the frame F1 formed through the clamp portion 60 can be released, and the conveyance means 71 can be positioned above the holding table 5. Then, the frame F1 is held by the suction pad 72 of the conveyance means 71, and the ring-shaped reinforcing portion 85 supported by the frame F1 by the holding tape T1 is separated from the holding table 5 together with the frame F1. Thereby, the ring-shaped reinforcing portion 85 can be removed from the wafer W on the holding table 5, leaving only the element region 83 of the wafer W. The wafer W from which the ring-shaped reinforcing portion 85 has been removed is carried out from the laser processing apparatus 1 (see FIG. 1).

如圖7所示，在環狀補強部除去步驟之後，實施元件區域支撐步驟。在元件區域支撐步驟中，將已除去環狀補強部85(參照圖6)的晶圓W收容於另一個框架F2的開口部中，並在晶圓W的背面81及框架F2上再重新貼上保持膠帶T2。藉此，可在將晶圓W的正面80側朝向上方的狀態下使晶圓W透過保持膠帶T2將晶圓W支撐於框架F2上。又，可將殘存於晶圓W正面80的保持膠帶T1從晶圓W剝離。晶圓W是以透過保持膠帶T2被支撐於框架F2內側的狀態被搬入切削裝置73(參照圖8)。再者，元件區域支撐步驟，可藉 由作業員的手工作業實施，也可以藉由圖未示之膠帶貼片機實施。 As shown in FIG. 7, after the step of removing the annular reinforcing portion, a step of supporting the element region is performed. In the element area supporting step, the wafer W from which the ring-shaped reinforcing portion 85 (see FIG. 6) has been removed is housed in the opening portion of the other frame F2, and the wafer W is reattached to the back surface 81 and the frame F2 Keep the tape T2 on. Thereby, the wafer W can be supported on the frame F2 through the holding tape T2 while the front surface 80 side of the wafer W is directed upward. The holding tape T1 remaining on the front surface 80 of the wafer W can be peeled from the wafer W. The wafer W is carried into the cutting device 73 (see FIG. 8) in a state where the wafer W is supported inside the frame F2 by the holding tape T2. Furthermore, the component area support step can be borrowed It can be implemented by the operator's manual operation, or it can be implemented by a tape mounter (not shown).

如圖8所示，在元件區域支撐步驟之後，實施分割步驟。在分割步驟中，是使晶圓W的正面80面朝向上方而保持於切削裝置73的保持台74上。切削刀片75是在晶圓W的徑向外側對齊分割預定線82，並在該位置下降至可切入到保持膠帶T2半途之高度。並且，可藉由相對於高速旋轉的切削刀片75將保持台74上之晶圓W切削傳送，而沿著分割預定線82切削晶圓W。再透過沿著所有的分割預定線82重複切削動作，以將晶圓W分割成一個個的元件。 As shown in FIG. 8, after the element area supporting step, a dividing step is performed. In the dividing step, the front surface 80 of the wafer W is held upward and held on the holding table 74 of the cutting device 73. The cutting blade 75 is aligned with the division line 82 on the radially outer side of the wafer W, and is lowered at this position to a height at which it can cut into the holding tape T2 halfway. In addition, the wafer W on the holding table 74 can be cut and transferred by the cutting blade 75 rotating at a high speed, and the wafer W can be cut along the predetermined division line 82. Then, the cutting operation is repeated along all the predetermined division lines 82 to divide the wafer W into individual elements.

又，在分割步驟中，晶圓W的分割方法並無特別限定。例如，也可在半切(half cut)晶圓W而形成切削溝之後，藉由斷裂加工來分割晶圓W。而且，也可以藉由透過燒蝕加工將晶圓W全切(full cut)來分割晶圓W，或透過SD加工在晶圓W內形成改質層之後，對改質層施加外力來分割晶圓W也可以。再者，所謂改質層，意指因為雷射光線的照射使得晶圓W內部的密度、折射率、機械強度和其他物理特性變成與周圍不同的狀態，且使強度較周圍低的區域。改質層，可為例如溶融處理區域、裂痕區域、絕緣破壞區域、折射率變化區域，也可以是將這些混合而成的區域。 In the dividing step, the method of dividing the wafer W is not particularly limited. For example, after the cutting groove is formed by half cutting the wafer W, the wafer W may be divided by a fracture process. In addition, the wafer W may be divided by full cut of the wafer W by ablation processing, or after a modified layer is formed in the wafer W by SD processing, an external force may be applied to the modified layer to separate the crystals. Circle W is also possible. In addition, the so-called modified layer means an area where the density, refractive index, mechanical strength, and other physical characteristics of the wafer W are different from the surroundings due to the irradiation of the laser light, and the intensity is lower than the surroundings. The modified layer may be, for example, a melt-treated region, a crack region, an insulation breakdown region, or a refractive index change region, or a region obtained by mixing these.

接著，參照圖9A及圖9B，說明保持台之餘隙槽的溝寬和環狀補強部之位置關係。分別為圖9A是顯示本實施形態之餘隙槽周邊的放大圖，圖9B是顯示比較例中之餘隙槽周邊的放大圖。又，在圖9B的比較例中，對於和本實 施形態相同之名稱，附加相同的符號說明。 Next, the positional relationship between the groove width of the clearance groove holding the stage and the annular reinforcing portion will be described with reference to FIGS. 9A and 9B. FIG. 9A is an enlarged view showing the periphery of the clearance groove in this embodiment, and FIG. 9B is an enlarged view showing the periphery of the clearance groove in the comparative example. Also, in the comparative example of FIG. 9B, The same name of the application form, with the same symbol description.

如圖9A所示，本實施形態之餘隙槽53，比環狀補強部85還要寬，且形成在對應於環狀補強部85的位置上。餘隙槽53的內側面55，位於從環狀補強部85的內周面88朝內側間隔少許距離X1之處。又，餘隙槽53的外側面56，位於從環狀補強部85的外周面89朝外側間隔充分的距離X2之處。如此，將本實施形態之餘隙槽53，形成為使內側面55接近於環狀補強部85，而外側面56離環狀補強部85遠。 As shown in FIG. 9A, the clearance groove 53 in this embodiment is wider than the annular reinforcing portion 85 and is formed at a position corresponding to the annular reinforcing portion 85. The inner side surface 55 of the clearance groove 53 is located at a distance X1 from the inner peripheral surface 88 of the annular reinforcing portion 85 toward the inside. The outer side surface 56 of the clearance groove 53 is located at a sufficient distance X2 from the outer peripheral surface 89 of the annular reinforcing portion 85 to the outside. In this way, the clearance groove 53 of this embodiment is formed so that the inner side surface 55 is close to the annular reinforcing portion 85 and the outer side surface 56 is far from the annular reinforcing portion 85.

因為使餘隙槽53的內側面55接近環狀補強部85的內周面88，可以用較廣的範圍將晶圓W保持在保持台5的保持面51上。據此，雷射加工時，因為元件區域83和環狀補強部85(外周剩餘區域84)的邊界部86附近會被安定地支撐在保持面51上，所以不會在相對於邊界部86的雷射光線照射位置上產生偏離。又，校準時，因為餘隙槽53的外側面56距離環狀補強部85的外周面89充分的距離，所以可使從攝像手段3(參照圖4)朝向餘隙槽53內的光量變多。據此，在攝像影像中顯示變暗的位置會變得明確，並使晶圓W的外周邊緣90變得容易辨識。 Since the inner side surface 55 of the clearance groove 53 is brought close to the inner peripheral surface 88 of the annular reinforcing portion 85, the wafer W can be held on the holding surface 51 of the holding table 5 over a wide range. According to this, during laser processing, the vicinity of the boundary portion 86 between the element region 83 and the annular reinforcing portion 85 (the outer peripheral remaining region 84) is stably supported on the holding surface 51, so it will not be in contact with the boundary portion 86. There is a deviation in the position of the laser light. Moreover, since the outer side surface 56 of the clearance groove 53 is sufficiently distanced from the outer peripheral surface 89 of the annular reinforcing portion 85 during calibration, the amount of light from the imaging means 3 (see FIG. 4) toward the clearance groove 53 can be increased. . Accordingly, the position where the display becomes dark in the captured image becomes clear, and the outer peripheral edge 90 of the wafer W can be easily identified.

另一方面，如圖9B所示，比較例之餘隙槽53，也是比環狀補強部85還要寬，且形成在對應環狀補強部85的位置上。然而，餘隙槽53的內側面55，位於從環狀補強部85的內周面88間隔充分的距離X3(X3>X1)之處。又，餘隙槽53的外側面56，位於從環狀補強部85的外周面89間隔少許距離X4(X4<X2)之處。像這樣，將比較例之餘隙槽53 形成為內側面55距離環狀補強部85較遠，而外側面56距離環狀補強部85較近。 On the other hand, as shown in FIG. 9B, the clearance groove 53 of the comparative example is also wider than the annular reinforcing portion 85 and is formed at a position corresponding to the annular reinforcing portion 85. However, the inner side surface 55 of the clearance groove 53 is located at a sufficient distance X3 (X3> X1) from the inner peripheral surface 88 of the annular reinforcing portion 85. The outer side surface 56 of the clearance groove 53 is located at a distance X4 (X4 <X2) at a distance from the outer peripheral surface 89 of the annular reinforcing portion 85. In this way, the clearance slot 53 of the comparative example is It is formed so that the inner side surface 55 is farther from the ring-shaped reinforcing portion 85 and the outer side surface 56 is closer to the ring-shaped reinforcing portion 85.

因為餘隙槽53的內側面55距離環狀補強部85的內周面88較遠，所以與圖9A相比，保持面51上的晶圓W的保持範圍就會變小。因此，雷射加工時，因為元件區域83和環狀補強部85(外周剩餘區域84)的邊界部86附近沒有被安定地支撐在保持面51上，因此有相對於邊界部86的雷射光線的照射位置會產生偏離之虞。又，校準時，因為使餘隙槽53的外側面56靠近環狀補強部85的外周面89，所以從攝像手段3(參照圖4)朝向餘隙槽53內的光量會變少。因此，在攝像影像中顯示變暗的位置會變得較模糊，並使得晶圓W的外周邊緣90變得難以辨識。 Since the inner side surface 55 of the clearance groove 53 is far from the inner peripheral surface 88 of the annular reinforcing portion 85, the holding range of the wafer W on the holding surface 51 becomes smaller than that of FIG. 9A. Therefore, during the laser processing, the vicinity of the boundary portion 86 of the element region 83 and the annular reinforcing portion 85 (the outer peripheral remaining region 84) is not stably supported on the holding surface 51, so there is a laser ray relative to the boundary portion 86. There may be a deviation in the irradiation position of. Moreover, since the outer side surface 56 of the clearance groove 53 is brought close to the outer peripheral surface 89 of the annular reinforcing portion 85 during calibration, the amount of light from the imaging means 3 (see FIG. 4) into the clearance groove 53 is reduced. Therefore, the position where the display becomes dark in the captured image becomes blurred, and the outer peripheral edge 90 of the wafer W becomes difficult to recognize.

如以上，根據本實施形態之晶圓W的加工方法，可藉由沿著元件區域83和環狀補強部85(外周剩餘區域84)之邊界部86對晶圓W照射雷射光線，而使晶圓W的元件區域83和環狀補強部85分離。並且，可透過使分離後的環狀補強部85由保持台5脫離，而從晶圓W上除去環狀補強部85。這樣一來，因為不使用切削刀片就可以使元件區域83和環狀補強部85分離，因此不需要像使用切削刀片進行分離時一樣，還要考慮切削刀片的刀鋒伸出量和厚度。又，因為是以雷射光線的照射而加工晶圓W，因此可將加工區域抑制在最小限度而不會使元件區域83變小。又，即使在隨著晶圓W的大口徑化而將厚度變大的情況下，也可安定地除去環狀補強部85。 As described above, according to the method of processing the wafer W of this embodiment, the wafer W can be irradiated with laser light along the boundary portion 86 of the element region 83 and the ring-shaped reinforcing portion 85 (the outer peripheral remaining region 84), so that The element region 83 of the wafer W is separated from the annular reinforcing portion 85. In addition, the ring-shaped reinforcing portion 85 can be removed from the wafer W by separating the ring-shaped reinforcing portion 85 from the holding table 5. In this way, since the element region 83 and the ring-shaped reinforcing portion 85 can be separated without using a cutting insert, it is not necessary to consider the amount and thickness of the cutting edge of the cutting insert, as in the case of using a cutting insert for separation. In addition, since the wafer W is processed by laser light irradiation, the processing area can be minimized without reducing the element area 83. Further, even when the thickness is increased as the diameter of the wafer W is increased, the ring-shaped reinforcing portion 85 can be removed stably.

再者，本發明不限於上述實施形態，並可進行各種變更而實施。在上述實施形態中，關於在附圖所圖示之大小或形狀等，並不限定於此，而可在發揮本發明的效果的範圍內作適當變更。另外，只要不脫離本發明之目的範圍均可以作適當變更而實施。 The present invention is not limited to the above-mentioned embodiments, and various modifications can be made to implement the present invention. In the embodiment described above, the size, shape, and the like shown in the drawings are not limited to this, and may be appropriately changed within a range in which the effects of the present invention are exhibited. In addition, as long as it does not deviate from the range of the objective of this invention, it can change and implement suitably.

例如，在上述之實施形態中，雖然是作成在保持台5之頂面形成有餘隙槽53之構成，但並不受限於此構成。只要不會因為雷射光線的反射而對雷射光源造成損傷，保持台5的頂面也可以不形成餘隙槽53。 For example, in the above-mentioned embodiment, although the structure in which the clearance groove 53 was formed in the top surface of the holding table 5, it is not limited to this structure. As long as the laser light source is not damaged by the reflection of the laser light, the clearance groove 53 may not be formed on the top surface of the holding table 5.

又，在上述的實施形態中，雖然餘隙槽53的溝底54是作成以朝向保持台5的中心變深之形式傾斜的構成，但並不受限於此構成。餘隙槽53的溝底54，只要能夠將校準時的攝像光和雷射加工時的雷射光線反射成不會返回到照射源，則不論是形成何種皆可，例如，將溝底54傾斜成朝向保持台5的外周變深亦可。 In the embodiment described above, the groove bottom 54 of the clearance groove 53 is configured to be inclined toward the center of the holding table 5, but the structure is not limited to this. As long as the groove bottom 54 of the clearance groove 53 can reflect the imaging light during calibration and the laser light during laser processing so as not to return to the irradiation source, it can be formed regardless of the formation, for example, the groove bottom 54 It may be inclined to become deeper toward the outer periphery of the holding table 5.

又，在上述之實施形態中，環狀補強部除去步驟之第一、第二加工步驟，雖然是作成使雷射光線的照射位置往半徑方向內側分度傳送之構成，但並不受限於此構成。第一、第二加工步驟中，也可做成使雷射光線的照射位置往半徑方向外側分度傳送之構成。 In the above-mentioned embodiment, the first and second processing steps of the step of removing the ring-shaped reinforcing portion are structured so that the irradiation position of the laser light is transmitted to the inside in the radial direction, but they are not limited to this. This composition. In the first and second processing steps, a configuration may also be adopted in which the irradiation position of the laser light is transmitted to the outside in the radial direction.

產業上之可利用性 Industrial availability

如以上所說明的，本發明具有可以在不使元件區域縮小的狀況下安定地除去環狀補強部之效果，尤其對由大口徑尺寸的晶圓上將環狀補強部從晶圓上除去之晶圓的 加工方法中使用的保持台特別有用。 As described above, the present invention has the effect that the ring-shaped reinforcing portion can be removed stably without shrinking the element area, and in particular, the ring-shaped reinforcing portion can be removed from the wafer from a large-diameter wafer. Wafer The holding table used in the processing method is particularly useful.

Claims (2)

一種保持台，是用以保持晶圓，該晶圓是將形成有複數個元件之元件區域和圍繞該元件區域之外周剩餘區域形成於正面，並於對應該外周剩餘區域的背面形成有環狀補強部，該保持台的特徵在於：於該保持台的頂面，在對應於該環狀補強部和該元件區域之邊界部的位置上形成有用以供雷射光線逸出的環狀餘隙槽，該餘隙槽的溝底為錐形且形成有使該雷射光線散射之微細的凹凸。A holding table is used to hold a wafer. The wafer is formed on a front surface of a device region in which a plurality of elements are formed and a remaining region surrounding an outer periphery of the element region, and a ring is formed on a back surface corresponding to the remaining region of the outer periphery. The reinforcing part is characterized in that a ring clearance is formed on the top surface of the holding stage at a position corresponding to the boundary between the annular reinforcing part and the element area, which is used for laser light to escape. The groove bottom of the clearance groove is tapered and has fine unevenness that scatters the laser light. 如請求項1之保持台，是於利用雷射光線的照射而在該晶圓背面中將磨削該元件區域的背面側而形成在該外周剩餘區域背面側的該環狀補強部除去時使用。The holding table of claim 1 is used when the ring-shaped reinforcing portion formed on the back side of the outer peripheral area is ground on the back side of the wafer by grinding the back side of the element area on the wafer back side by irradiation of laser light. .
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