201250922 六、發明說明： 【發a月所屬之技袖領域】 發明領域 本發明係有關於一種用以支撐並搬送晶圓之晶圓支撐 板及其使用方法。 3 背景技術 例如，在半導體元件製造過程中，在略呈圓板形狀之 半導體晶圓表面，藉由形成為格子狀之切割道(分割預定線) 所區劃出之各區域，分別形成IC、LSI等元件，沿著分割預 定線將形成有該等元件之各區域分割，藉此，製造各個元 件0 關於將半導體晶圓分割成各個元件的分割裝置，一般 使用稱為切割(dicing)裝置的切削裝置，該切削裝置藉由具 有非常薄之刀刀的切削刀，沿著分割預定線切削半導體晶 圓而將晶圓分割成各個元件。如上所分割之元件被封裝而 廣泛地利用於行動電話或電腦等電氣機器。 近年來，行動電話或電腦等電氣機器更要求輕量化、 小型化，需要更薄的元件。而作為將晶圓分割成更薄元件 的技術，已開發、實用化稱為所謂DBG(Dicing Before Grinding :切割後研磨）法的分割技術(例如，參照日本專利 公開公報特開平11 -40520號公報）。 該DBG法係如下述之技術，從半導體晶圓表面沿著分 割預定線形成預定深度（相當於元件之完工厚度）的分割 201250922 溝，然後，磨削於表面形成有分割溝的半導體晶圓之背面， 使該背面顯現出分割溝，而將晶圓分割成各個元件，可將 元件的厚度加工成50#m以下。 DBG法中，由於係不完全切斷晶圓而為半切穿，故無 需使用全切穿時所使用的切割膠帶，由本申請人開發了為 節省切割膠帶而實施半切穿之專用切削裝置（參照日本專 利公開公報特開2004-23 5622號公報） 專利文獻1 :日本專利公開公報特開平11-40520號公報 專利文獻2 :日本專利公開公報特開2004-235622號公 報 專利文獻3 :日本專利公開公報特開2005-166969號公 報 【發明内容】 發明揭示 發明欲解決之課題 但是，專利文獻2所揭示之半切穿專用切削裝置有不具 泛用性，在未實施半切穿時須中斷運轉而生產性較差的問 題。另一方面，若透過切割膠帶以環狀框支撐晶圓，可使 用一般的切割膠帶而實施半切穿，但會有必須使用切割膠 帶而較不經濟的問題。 本發明係有鑑於以上各點而做成者，目的在於提供一 種在半切穿晶圓時無須使用切割膠帶的晶圓支撐板及其使 用方法。 根據申請專利範圍第1項之發明，可提供一種晶圓支撐 201250922 板，係用以支撐搬送晶圓之晶圓 有：晶圓支樓部，係由_凹部^ ’其特徵在於具備 者；複數之貫通孔，係形成於該凹，:且支撐晶圓 係圍繞該晶圓支樓部，由加巧置二/之底者；及框部， 宜在圓形凹部的底，配設送機構所作用者。 根據申請專利範圍第3項之發明，可提供-種晶圓支標 板之使用方法’係加工裝置中之如申請專利範圍第⑷項 之晶圓支撐板的❹錢，該加U具備有：錢台， 係具備有保持晶圓之吸引力進行作用的保持面者；加工機 構，係對於保持於該夾盤台之晶圓施行預定之加工者；幻 搬送機構係、將晶圓搬入該夾盤台者；及第2搬送機構，係 從該夾盤台搬出晶圓者’該晶圓支撐板之使用方法之特徵 在於具備有：晶圓搬人步驟，該第丨搬送機構個於收納有 晶圓之該晶圓支擇板的該框部，而將晶圓搬人至該爽盤台 的保持面，保持步驟，使吸引力作用於該夾盤台之保持面， 透過形成於該圓形凹部之底的該複數之貫通孔’吸引保持 晶圓；加工步驟，藉由該加工機構對晶圓施行預定之加工； 及晶圓搬出步驟，使從該夾盤台搬出晶圓之該第2搬送機構 作用於該晶圓支撐板之該框部，並且解除作用於該夾盤台 之保持面的吸引力，從該夾盤台搬出晶圓。 晶圓支撐板之圓形凹部的深度，宜設定為較從形成於 晶圓之切削溝的底至晶圓背面為止的距離為淺。 發明效果 藉由以本發明之晶圓支撐板支撐晶圓’即使不使用專 201250922 門實施半切穿的切削装置，亦無需使用切割膠帶且可使用 一般的切割裝置將晶圓半切穿’非常的經濟實惠。又，由 於可重複使用本發明之晶圓支樓板，故相當經濟。 此外，即使是如下般的雷射加工裝置，亦可使用本發 明之晶圓支撐板，砰避免使用切割膠帶而較為經濟，該等 雷射加工裝置如：將具有吸收性之波長的雷射光束照射於 晶圓表面，對晶圓施行融磨加工而形成分割溝的雷射加工 裝置；以及將具有透過性之波長的雷射光束集光照射於晶 圓内部’對晶圓在晶圓内部形成改質層的雷射加工裝置。 圖式簡單說明 第1圖係切削裝置的外觀立體圖。 第2圖係顯示以本發明實施形態之晶圓支撐板支樓晶 圓的樣子的分解立體圖。 第3圖係以晶圓支撐板支撐晶圓之狀態的立體圖。 第4圖係晶圓支樓板的縱截面圖。 第5圖係顯示切削以晶圓支撐板支撐晶圓的樣子的立 體圖。 【實施方式】 用以實施發明之形態 以下，參照圖示詳細說明本發明之實施形態。參照第1 圖顯不了使用本發明之晶圓支樓板而可半切穿晶圓之切 削裝置2的外觀立體圖。 在切削裝置2之前面俱!，設有操作者可對裝置輸入加工 條件等彳日tf的彳讀機構*。在裝置上部，設有等顯示機 201250922 構ό ’可顯示對操作者之介紹畫面、或藉由後述之攝像機構 所拍攝之圖像。 如第2及3圖所示，在切割對象之元件晶圓W表面，直 交地形成有第1切割道（分割預定線)S1、與第2分割道（分割 預定線)S2 ’由第1切割道si、與第2分割道S2進行區劃，在 晶圓W上形成有多數的元件d，11係用以顯示石夕晶圓w晶向 之記號的切口。 參照第2圖，顯示了以本發明實施形態之晶圓支撐板3〇 支樓晶圓W的樣子的分解立體圖。晶圓支撐板30具有直徑 僅較晶圓W之直徑稍大的圓形凹部32，在圓形凹部32底， 形成有複數之貫通孔34。此外，形成有向著圓形凹部32而 可嵌合於晶圓W之切口 11的突起31。 晶圓支撐板30具有圍繞圓形凹部32之框部33，切削裝 置2之搬送機構作用於該框部33 ’而可搬送晶圓支撐板3〇。 晶圓支撐板30宜由樹脂所形成，亦可由鋁等金屬所形成。 晶圓支撐板30由於係使用於半切穿晶圓W，故圓形凹 部3 2的深度設定成較從形成於晶圓W之切削溝底至晶圓w 背面之距離稍淺的深度。例如’設晶圓W的厚度為7〇〇em， 切削溝的深度為lOO/zm，則圓形凹部32的深度則設定為較 600 // m淺，例如為 500 " m。 圓形凹部32為支撐晶圓W的晶圓支撐部，使晶圓支撐 板30之突起31嵌合於晶圓W的切口 11，而將晶圓w插入圓 形凹部32中，如上述狀態之立體圖顯示於第3圖。宜如第4 圖之縱截面圖所示，在支撐晶圓之圓形凹部32的底，配設 201250922 有止滑片36。 在止滑片36也形成有連通於貫通孔34之複數的貫通孔 37。藉由在作用為晶圓支撐部之圓形凹部32底設置止滑片 36 ’可防止以晶圓支撐板3〇支撐晶圓w在搬送中，晶圓W 從圓形凹部32飛出。 再度參照第1圖，在晶圓匣8中收納複數片以晶圓支撐 板30所支撐的晶圓w。晶圓匣8係載置於可上下移動的匣升 降機9上。 在晶圓£8的後方，配設有搬出入機構1〇，可從晶圓匣 8搬出切削前的晶圓w，並且將切削後之晶圓搬入晶圓匣8。 在晶圓匣8與搬出入機構1〇之間，設有搬出入對象之晶 圓W可暫時載置之區域的暫時放置區域12，在暫時放置區 域12配設有對位機構14，可將晶圓w對位於一定的位置。 在暫時放置區域12附近，配設有搬送機構16，該搬送 機構16具有旋轉臂，可吸附支撐有晶圓W之晶圓支撐板30 的框部33而進行搬送；被搬出至暫時放置區域12之晶圓W 係由搬送機構16所吸附而搬送至夾盤台18上，在該夾盤台 18之保持面上進行吸引，並且藉由複數之夾具19固定晶圓 支樓板30的框部33而保持在夾盤台18上。 夾盤台18係構成為可旋轉且可來回移動於X軸方向，在 夾盤台18之X軸方向移動路徑上，配設有校準機構2〇，可檢 測出應切削晶圓W之切割道。 校準機構20具有用以拍攝晶圓w表面之攝像機構22， 根據由拍攝所取得之圖像，可藉由型樣匹配等處理而檢測 201250922 出應切削之_道。藉由攝像機構22所取得之圖像顯示於 顯示機構6。 在校準機構20之左側，配設有切削機構24，該切削機 構24可對保持在夾盤台18之晶圓w施行切削加工。切削機 構24與杈準機構2〇係一體地構成，兩者連動地移動於γ軸方 向及Z軸方向。 切削機構24係在可旋轉之心軸26前端安裝有切削刀28 而構成，可移動於Y軸方向及2軸方向。切削刀28位於攝像 機構22之X軸方向的延長線上。 結束切削之晶圓W藉由搬送機構25從夾盤台18搬出， 搬送至旋轉器洗淨裝置27，以旋轉器洗淨裝置27進行旋轉 洗淨及旋轉乾燥。 接著’說明如上述構成之本發明實施形態的晶圓支標 板30的使用方法。晶圓支撐板之使用方法包含：晶圓搬入 步驟，搬入晶圓W的搬送機構16作用於收納支撐有晶圓评 之晶圓支撐板30的框部33，將晶圓W搬入至夾盤台18的保 持面；及保持步驟，使吸引力作用於夾盤台18之保持面， 透過形成在晶圓支撐板3〇之圓形凹部32底的複數貫通孔 34 ’吸引保持住晶圓w。 如上所述，在夾盤台18透過晶圓支撐板30而吸引保持 住晶圓W後，以切削機構(加工機構)24對晶圓w施行切削加 工而實施切削步驟。該切削步驟參照第5圖進行說明。 參照第5圖’顯示了藉由切削機構24沿著切割道切削支 撐於晶圓支撐板30之晶圓w的立體圖。25係切削機構24的 201250922 轴罩在〜軸罩25中，可旋轉地收納有藉由未圖示之祠 服馬達而旋轉驅動的心軸26。_刀28為料刀，於其外 周β具有在錄母材中分散鑽石磨料顆粒而成的切削刀刃 28a 〇 40係罩住切削刀28的刀罩，安裝有沿著切削刀μ側面 伸長之未圖示的切削水喷嘴、及將切削水噴射至切削刀Μ 之切削刀刃28a與晶圓|之接觸區域的切削水喷射喷嘴46。 來自切削水供給部44之切削水透過軟管42供給至未圖 不之切削水喷嘴，並透過軟管48供給至切削水喷射喷嘴 46。切削水係以切削水供給部料加壓為例如約〇 ，由 切削水喷射噴嘴46以每分L6〜2.〇公升的流量喷射。 50係裝卸罩’藉由螺桿52可裝卸地安農於刀罩4〇。裝 卸罩50具有沿著切削刀28側面伸長之切削水喷嘴54，切削 水係透過軟管56供給至切削水喷嘴54。 60係刀檢測區塊，内藏有可檢測出切削刀28之切削刀 刀28a缺口或磨損的刀感測器，且刀檢測區塊6〇藉由螺桿 可褒卸地安裝於刀罩4 G。刀檢測區塊6 Q具有可調整刀感測 器位置的調整螺桿64。 在沿著切割道SI、S2切削支撐於晶圓支撐板3〇之晶圓 力則，藉由習知之型樣匹配等方，實施應切削之切割道 S1、S2與切削刀28的校準。 實施校準後，進行第1切割道S1與切削刀28的對位，使 失盤台18移動於第5圖中箭號X所示之χ軸方向，並且一面 使切削刀28於箭號Α的方向高速旋轉（例如3〇〇〇〇rpm)、一面 10 201250922 使切削機構24下降，在經對位後之第1切割道S1形成預定深 度(相當於元件之元工厚度的深度）的分割溝。 該分割溝的深度為未達晶圓支撐板30之框部33上表面 的深度，例如為1〇〇 # m。藉由如上述以切削刀28半切穿晶 圓W，可不傷到晶圓支撐板30地形成預定深度的分割溝。 藉由依記憶於記憶體之切割道間距而一面將切削機構 24於Y軸方向定位進行分度移動、一面進行切削，可半切穿 出所有第1切割道S1 ’而形成同樣的分割溝。此外，若使夾 盤台18旋轉90度後’再進行與上述同樣的切削，則可半切 穿出所有第2切割道S2而形成同樣的分割溝。 如上述實施半切穿所有的切割道SI、S2的加工步驟 後，解除夾盤台18的吸引力’然後使搬送機構25的吸附部 作用於晶圓支撐板30之框部33而吸引保持住晶圓支撐板 30，搬送至旋轉器洗淨裝置27，以旋轉器洗淨裝置27將晶 圓W旋轉洗淨及旋轉乾燥。 接著，在晶圓W表面貼附保護膠帶後，藉由使用磨削 裝置之背面磨削步驟，將形成有分割溝之晶圓背面磨削而 使分割溝出現於該背面，藉此，可將晶圓W分割成各個元 件D 0 根據上述之本發明實施形態，藉由以晶圓支撐板30支 撐晶圓W ’即使不使用專門實施半切穿的切削裝置，可使 用一般的切割裝置將晶圓W半切穿而更無需使用切割膠 帶，#常的經濟實惠。又，由於可重複使用晶圓支撐板30， 故相當經濟。 2〇125〇922 在上述實施形態中’係以將本發明之晶圓支撐板3〇使 用於切削裝置2為例來進行說明，但本發明之晶圓支撐板30 並不限定於該使用方法’也同樣地可使用於如下般的雷射 加工農置：將具有吸收性之波長的雷射光束照射於晶圓W 表面，對晶圓W施行融磨加工而形成分割溝的雷射加工裝 置；以及將具有透過性之波長的雷射光束集光照射於晶圓 W内部，對晶圓W在晶圓内部形成改質層的雷射加工裝置。 式簡單說明】 第1圖係切削裝置的外觀立體圖。 第2圖係顯示以本發明實施形態之晶圓支撐板支撐晶 圓的樣子的分解立體圖。 第3圖係以晶圓支撐板支撐晶圓之狀態的立體圖。 第4圖係晶圓支撐板的縱截面圖。 第5圖係顯示切削以晶圓支撐板支撐晶圓的樣子的立 體圖。 【主要元件符號說明】 2..·切削裝置 14.. .對位機構 4···操作機構 16...搬送機構 6··.顯示機構 18.. .爽盤台 8··.晶圓匿 19·· .夾具 9··.匣升降機 20·· .校準機構 10··.搬出入機構 22.. .攝像機構 11".切口 24.. .切削機構 12...暫時放置區域 25.. .心軸罩 12 201250922 26".心軸 50...裝卸罩 27...旋轉器洗淨裝置 52、62...螺桿 28...切削刀 54...切削水喷嘴 28a...切削刀刃 60...刀檢測區塊 30...晶圓支撐板 64...調整螺桿 31...突起 S1...第1切割道 32...圓形凹部 S2...第2切割道 33...框部 A...箭號 34、37...貫通孔 D...元件 36...止滑片 W...晶圓 40...刀罩 X...X軸方向 42、48、56.··軟管 44...切削水供給部 46...切削水噴射噴嘴 13201250922 VI. Description of the Invention: [Technical Field of the Affiliated Field] Field of the Invention The present invention relates to a wafer support plate for supporting and transporting a wafer and a method of using the same. 3. For example, in the semiconductor device manufacturing process, ICs and LSIs are formed on the surface of a semiconductor wafer having a substantially disk shape by regions formed by lattice-shaped dicing streets (divided lines). The elements are divided into regions along which the elements are formed along the dividing line, thereby manufacturing the respective elements. Regarding the dividing device for dividing the semiconductor wafer into individual elements, a cutting called a dicing device is generally used. A device that divides a wafer into individual components by cutting a semiconductor wafer along a predetermined dividing line by a cutting blade having a very thin blade. The components divided as described above are packaged and widely used in electric machines such as mobile phones and computers. In recent years, electric devices such as mobile phones and computers have been required to be lighter and smaller, and thinner components are required. In addition, as a technique for dividing a wafer into a thinner component, a technique of a so-called DBG (Dicing Before Grinding) method has been developed and put into practical use. For example, Japanese Laid-Open Patent Publication No. Hei 11-40520 ). The DBG method is a technique of forming a segmented 201250922 groove having a predetermined depth (corresponding to the finished thickness of a component) from a surface of a semiconductor wafer along a predetermined dividing line, and then grinding the semiconductor wafer having a dividing groove formed on the surface thereof. On the back side, the back surface is shown as a dividing groove, and the wafer is divided into individual elements, and the thickness of the element can be processed to 50#m or less. In the DBG method, since the wafer is not completely cut, it is half cut, so it is not necessary to use the dicing tape used for the full cut, and the applicant has developed a special cutting device for performing half-cutting to save the dicing tape (refer to Japan). Japanese Laid-Open Patent Publication No. 2004-235622 (Patent Document No. JP-A-2004-235622) Patent Document No. JP-A-2004-235622 JP-A-2005-166969 DISCLOSURE OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION However, the semi-cutting special cutting device disclosed in Patent Document 2 has no versatility, and must be interrupted when half-cutting is not performed, and productivity is poor. The problem. On the other hand, if the wafer is supported by a ring-shaped frame through a dicing tape, semi-cutting can be performed by using a general dicing tape, but there is a problem that it is not economical to use a dicing tape. SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object thereof is to provide a wafer support plate which does not require the use of dicing tape when half-cut through a wafer, and a method of using the same. According to the invention of claim 1 of the patent application, a wafer support 201250922 plate can be provided, which is used to support a wafer for transporting a wafer: a wafer branch portion, which is characterized by a recessed portion, which is characterized by a plurality; The through hole is formed in the concave hole, and the supporting wafer surrounds the wafer branch building portion, and the bottom portion is provided by adding the second layer; and the frame portion is preferably disposed at the bottom of the circular concave portion. The role of the person. According to the invention of claim 3, the method of using the wafer support plate can be provided as a method of processing the wafer support plate in the processing device as in the patent application scope (4), and the addition U is provided with: The money platform is provided with a holder for maintaining the attraction of the wafer; the processing mechanism is for processing the wafer to be held on the chuck table; the magic transfer mechanism is used to carry the wafer into the folder The method of using the wafer support plate is a method of using the wafer support plate, and the method of using the wafer support plate is characterized in that the wafer transfer step is included in the second transfer mechanism. The wafer of the wafer selects the frame portion of the wafer, and the wafer is transferred to the holding surface of the refresher table, and the holding step is performed to cause the attraction force to act on the holding surface of the chuck table, and the through hole is formed in the circle The plurality of through holes 'at the bottom of the concave portion sucks and holds the wafer; the processing step, the predetermined processing is performed on the wafer by the processing mechanism; and the wafer unloading step to move the wafer from the chuck table 2 The transport mechanism acts on the wafer support plate Frame portion, and releasing the attraction acting on the clip table of the disk holding surface of table unloaded from the wafer chuck. The depth of the circular recess of the wafer support plate should be set to be shallower than the distance from the bottom of the cutting groove formed on the wafer to the back surface of the wafer. Advantageous Effects of Invention By supporting a wafer with a wafer support plate of the present invention, even if a cutting device for semi-cutting is not used with a dedicated 201250922 door, it is not necessary to use a dicing tape and a wafer can be cut through a general cutting device. Affordable. Moreover, since the wafer slab of the present invention can be reused, it is economical. In addition, the wafer support plate of the present invention can be used even in a laser processing apparatus as follows, and it is economical to avoid the use of a dicing tape such as a laser beam having an absorptive wavelength. a laser processing device that illuminates the surface of the wafer to form a dividing groove by performing a grinding process on the wafer; and illuminating the inside of the wafer by collecting a laser beam having a wavelength of transparency. The laser processing device of the modified layer. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the appearance of a cutting device. Fig. 2 is an exploded perspective view showing a state in which a wafer support plate branch of the embodiment of the present invention is crystal-shaped. Fig. 3 is a perspective view showing a state in which a wafer is supported by a wafer support plate. Figure 4 is a longitudinal section of a wafer slab. Figure 5 is a perspective view showing how the wafer is supported by the wafer support plate. [Embodiment] Mode for Carrying Out the Invention Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to Fig. 1, there is shown an external perspective view of a cutting device 2 which can be half-cut through a wafer using the wafer slab of the present invention. In front of the cutting device 2, there is a reading mechanism* for the operator to input processing conditions such as the next day. In the upper part of the apparatus, an equal display machine 201250922 is provided to display an introduction screen to the operator or an image taken by an imaging unit to be described later. As shown in the second and third figures, the first scribe line (segmentation line) S1 and the second division line (segmentation line) S2' are formed orthogonally on the surface of the component wafer W to be cut. The track si is divided into the second divided track S2, and a plurality of elements d and 11 are formed on the wafer W to display a slit of the mark of the quartz crystal wafer. Referring to Fig. 2, an exploded perspective view showing a state in which the wafer support plate 3 of the embodiment of the present invention is used as the wafer W is shown. The wafer support plate 30 has a circular recess 32 having a diameter slightly larger than the diameter of the wafer W, and a plurality of through holes 34 are formed at the bottom of the circular recess 32. Further, a projection 31 which is fitted to the slit 11 of the wafer W toward the circular recess 32 is formed. The wafer support plate 30 has a frame portion 33 surrounding the circular recess 32, and the transfer mechanism of the cutting device 2 acts on the frame portion 33' to transport the wafer support plate 3''. The wafer support plate 30 is preferably formed of a resin or a metal such as aluminum. Since the wafer support plate 30 is used for half-cutting through the wafer W, the depth of the circular concave portion 32 is set to be slightly shallower than the distance formed from the bottom of the cutting groove of the wafer W to the back surface of the wafer w. For example, if the thickness of the wafer W is 7 〇〇em and the depth of the cutting groove is 100/zm, the depth of the circular recess 32 is set to be shallower than 600 // m, for example, 500 " m. The circular recess 32 is a wafer support portion that supports the wafer W, and the protrusion 31 of the wafer support plate 30 is fitted into the slit 11 of the wafer W, and the wafer w is inserted into the circular recess 32, as in the above state. The perspective view is shown in Figure 3. As shown in the longitudinal cross-sectional view of Fig. 4, a non-slip sheet 36 is disposed at the bottom of the circular recess 32 supporting the wafer. A plurality of through holes 37 that communicate with the through holes 34 are also formed in the anti-slip sheet 36. By providing the anti-slip sheet 36' at the bottom of the circular recess 32 serving as the wafer support portion, it is possible to prevent the wafer w from being supported by the wafer support sheet 3, and the wafer W is ejected from the circular recess 32. Referring again to Fig. 1, a plurality of wafers w supported by the wafer support plate 30 are accommodated in the wafer cassette 8. The wafer cassette 8 is placed on a lift 9 that can be moved up and down. A loading/unloading mechanism 1 is disposed behind the wafer £8, and the wafer w before cutting can be carried out from the wafer cassette 8, and the wafer after cutting can be carried into the wafer cassette 8. Between the wafer cassette 8 and the carry-in/out mechanism 1 暂时, a temporary placement area 12 in a region where the wafer W to be loaded and ejected can be temporarily placed is provided, and a positioning mechanism 14 is disposed in the temporary placement area 12 The wafer w pairs are located at a certain position. In the vicinity of the temporary placement area 12, a transport mechanism 16 having a swivel arm that can adsorb and transport the frame portion 33 of the wafer support plate 30 on which the wafer W is supported is transported, and is transported to the temporary placement area 12 The wafer W is adsorbed by the transport mechanism 16 and transported to the chuck table 18, and is attracted to the holding surface of the chuck table 18, and the frame portion 33 of the wafer branch 30 is fixed by a plurality of jigs 19. It remains on the chuck table 18. The chuck table 18 is configured to be rotatable and movable back and forth in the X-axis direction. On the X-axis direction of the chuck table 18, a calibration mechanism 2 is disposed to detect the cutting path of the wafer W to be cut. . The calibration mechanism 20 has an imaging mechanism 22 for capturing the surface of the wafer w. According to the image obtained by the imaging, the processing of the cutting should be detected by pattern matching or the like. The image obtained by the imaging unit 22 is displayed on the display unit 6. On the left side of the calibration mechanism 20, a cutting mechanism 24 is provided, which is capable of cutting the wafer w held on the chuck table 18. The cutting mechanism 24 is integrally formed with the alignment mechanism 2, and is moved in the γ-axis direction and the Z-axis direction in conjunction with each other. The cutting mechanism 24 is configured by attaching a cutting blade 28 to the tip end of the rotatable mandrel 26, and is movable in the Y-axis direction and the two-axis direction. The cutter 28 is located on an extension line of the imaging mechanism 22 in the X-axis direction. The wafer W that has been cut is carried out from the chuck table 18 by the transport mechanism 25, transported to the rotator cleaning device 27, and rotated by the rotator cleaning device 27 and spin-dried. Next, a method of using the wafer support plate 30 according to the embodiment of the present invention configured as described above will be described. The method of using the wafer support plate includes a wafer loading step, and the transfer mechanism 16 that carries the wafer W serves to house the frame portion 33 supporting the wafer support plate 30 of the wafer evaluation, and carries the wafer W to the chuck table. The holding surface of the 18; and the holding step of causing the attraction force to act on the holding surface of the chuck table 18, and sucking and holding the wafer w through the plurality of through holes 34' formed at the bottom of the circular recess 32 of the wafer support plate 3. As described above, after the chuck table 18 is sucked and held by the wafer support plate 30, the wafer w is subjected to cutting by the cutting mechanism (machining mechanism) 24, and the cutting step is performed. This cutting step will be described with reference to Fig. 5 . Referring to Fig. 5', a perspective view of the wafer w supported by the wafer support plate 30 along the dicing street is shown by the cutting mechanism 24. The 201250922 shaft cover of the 25-series cutting mechanism 24 is rotatably housed in the shaft cover 25, and the spindle 26 that is rotationally driven by a servo motor (not shown) is rotatably housed. The _ knife 28 is a material knife, and the cutting edge 28a 〇 40 which is formed by dispersing the diamond abrasive grains in the recording base material on the outer circumference β thereof is a blade cover covering the cutting blade 28, and is attached with a length extending along the side surface of the cutting blade μ. The cutting water nozzle shown in the drawing and the cutting water jet nozzle 46 that sprays the cutting water to the contact area between the cutting edge 28a of the cutting blade and the wafer|. The cutting water from the cutting water supply unit 44 is supplied to a cutting water nozzle (not shown) through a hose 42, and is supplied to the cutting water spray nozzle 46 through the hose 48. The cutting water is pressurized by the cutting water supply portion to, for example, about 〇, and is ejected by the cutting water jet nozzle 46 at a flow rate of L6 to 2. liter per minute. The 50-series hood is detachably attached to the knives 4 by means of a screw 52. The loading and unloading cover 50 has a cutting water nozzle 54 that is extended along the side surface of the cutting blade 28, and the cutting water is supplied to the cutting water nozzle 54 through the hose 56. The 60-series detecting block has a knife sensor that can detect the notch or wear of the cutting blade 28a of the cutting blade 28, and the knife detecting block 6 is detachably mounted to the blade cover by a screw. . The knife detecting block 6 Q has an adjusting screw 64 that adjusts the position of the knife sensor. The wafers supported on the wafer support plate 3 are cut along the dicing streets SI and S2, and the dicing of the dicing streets S1 and S2 to be cut and the cutting blade 28 are performed by conventional pattern matching or the like. After the calibration is performed, the alignment of the first scribe line S1 and the cutting blade 28 is performed, and the erroneous table 18 is moved in the x-axis direction indicated by the arrow X in FIG. 5, and the cutting blade 28 is placed on the arrow. The direction is rotated at a high speed (for example, 3 rpm), and the surface 10 is lowered by 10 201250922, and the first scribe line S1 after the alignment is formed into a dividing groove having a predetermined depth (corresponding to the depth of the component thickness of the element). . The depth of the dividing groove is not deeper than the upper surface of the frame portion 33 of the wafer support plate 30, and is, for example, 1 〇〇 # m. By semi-cutting the wafer W by the cutter 28 as described above, the division groove of a predetermined depth can be formed without damaging the wafer support plate 30. By arranging the cutting mechanism 24 in the Y-axis direction by indexing the cutting path pitch of the memory, the cutting mechanism 24 is cut and cut, and all of the first cutting lanes S1' can be cut through half to form the same dividing groove. Further, when the chuck table 18 is rotated by 90 degrees and then the same cutting as described above is performed, all the second cutting lanes S2 can be cut through half to form the same dividing groove. After the processing steps of cutting all the cutting passes SI and S2 are performed, the suction force of the chuck table 18 is released, and then the suction portion of the conveying mechanism 25 is applied to the frame portion 33 of the wafer support plate 30 to attract and hold the crystal. The circular support plate 30 is conveyed to the rotator cleaning device 27, and the wafer W is rotatably washed and spin-dried by the rotator cleaning device 27. Next, after the protective tape is attached to the surface of the wafer W, the back surface of the wafer on which the dividing groove is formed is ground by using the back grinding step of the grinding device, and the dividing groove is formed on the back surface. The wafer W is divided into individual elements D 0. According to the embodiment of the present invention described above, the wafer W is supported by the wafer support plate 30. Even if a cutting device that specifically performs half-cutting is not used, the wafer can be waferd using a general cutting device. W half cut and no need to use cutting tape, #常的经济. Moreover, since the wafer support plate 30 can be reused, it is economical. 2〇125〇922 In the above embodiment, the wafer support plate 3 of the present invention is used as an example of the cutting device 2, but the wafer support plate 30 of the present invention is not limited to this method of use. In the same manner, laser processing can be used for a laser processing apparatus in which a laser beam having an absorptive wavelength is irradiated onto the surface of the wafer W, and the wafer W is subjected to a melting process to form a dividing groove. And a laser processing device that illuminates the inside of the wafer W with a laser beam having a transparent wavelength, and forms a modified layer on the wafer W inside the wafer. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the appearance of a cutting device. Fig. 2 is an exploded perspective view showing a state in which a wafer support plate according to an embodiment of the present invention supports a crystal. Fig. 3 is a perspective view showing a state in which a wafer is supported by a wafer support plate. Figure 4 is a longitudinal sectional view of the wafer support plate. Figure 5 is a perspective view showing how the wafer is supported by the wafer support plate. [Description of main component symbols] 2.. Cutting device 14.. Alignment mechanism 4···Operating mechanism 16...Transporting mechanism 6··. Display mechanism 18... Cooling table 8··. Wafer密 19··. Jig 9··.匣Elevator 20··.Calibration mechanism 10··. Carry-in mechanism 22... Camera mechanism 11".Incision 24.... Cutting mechanism 12... Temporary placement area 25. . Mandrel cover 12 201250922 26". mandrel 50... loading and unloading cover 27... rotator cleaning device 52, 62... screw 28... cutting blade 54... cutting water nozzle 28a.. Cutting edge 60...knife detecting block 30...wafer supporting plate 64...adjusting screw 31...protrusion S1...first cutting pass 32...circular recess S2... 2 cutting path 33... frame part A... arrow 34, 37... through hole D... element 36... stop slide W... wafer 40... knife cover X.. X-axis direction 42, 48, 56. Hose 44... Cutting water supply unit 46... Cutting water injection nozzle 13