CN102810518A - Wafer loading board structure and wafer bonding method - Google Patents
Wafer loading board structure and wafer bonding method Download PDFInfo
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- CN102810518A CN102810518A CN2012102446465A CN201210244646A CN102810518A CN 102810518 A CN102810518 A CN 102810518A CN 2012102446465 A CN2012102446465 A CN 2012102446465A CN 201210244646 A CN201210244646 A CN 201210244646A CN 102810518 A CN102810518 A CN 102810518A
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- wafer
- plate structure
- carrying plate
- supporting region
- support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Abstract
The invention provides a wafer loading board structure and a wafer bonding method. The wafer loading board structure comprises a loading area and a supporting area, wherein the supporting area is formed on the periphery of the loading area. The width of the supporting area is 5 to 20 percent of the length of the supporting area. When a wafer is bonded to a bonding layer on the loading area, a flexible bonding pad is provided for bonding the wafer onto the bonding layer on the loading area. The wafer loading board structure can solve the problem that the thickness of the bonding layer is non-uniform or the bonding layer is warped because the flowing bonding layer projections are accumulated on the edge of the loading board.
Description
Technical field
The present invention relates to a kind of wafer joint method, particularly relate to a kind of wafer carrying plate structure and method of fitting and carrying wafer of being used to.
Background technology
In semiconductor production process, need carry out the processed of different temperatures sometimes.Because different materials has different thermal coefficient of expansions (coefficient of thermal expansion; CTE); Therefore; The warpage situation takes place in the composite construction (wafer that for example has different material layer) with different heat expansion coefficient through temperature inversion the time (for example by high-temperature reply to room temperature time) easily.At this moment; In order to improve this warpage situation; Can this composite construction be fitted on the higher loading plate of an intensity through one deck joint glue, make this composite construction can on loading plate, carry out the processed of different temperatures, thereby can improve the warpage issues of composite construction.
When objects such as wafer were fitted in the joint glue on the loading plate, the assembly on wafer was weighed wounded, can use the flexible glue pad to pressurize usually.Yet; When using the flexible glue pad to pressurize, the easy projection of joint glue meeting on the loading plate is piled up in the edge of loading plate, causes knitting layer to locate problem in uneven thickness on the edge of; Make the chip at wafer proximal edge place still have the problem of warpage, and then increase the difficulty of following process.
So, be necessary to provide a kind of wafer carrying plate structure and wafer joint method, to solve the existing in prior technology problem.
Summary of the invention
Main purpose of the present invention is to provide a kind of wafer carrying plate structure, and said wafer carrying plate structure comprises supporting region and Support.Supporting region is used to carry a wafer, the Support be formed at supporting region around, wherein the width of Support be supporting region length 5%～20%.
Wafer carrying plate structure of the present invention can support soft pressing pad through the Support; And the material of the knitting layer that flows can outwards flow to supporting region Support on every side in pressurized process; Be piled up in the edge of loading plate with the knitting layer projection of avoiding flowing, and cause the problem of the in uneven thickness or warpage of knitting layer.
Another object of the present invention is to provide a kind of wafer joint method, be used to engage wafer to wafer carrying plate structure.In this wafer joint method, at first, a wafer carrying plate structure is provided, said wafer carrying plate structure has a supporting region and a Support, the Support be formed at supporting region around, wherein the width of Support be supporting region length 5%～20%.Then, form a knitting layer on supporting region.Then, provide a wafer to be engaged on the knitting layer.Then, provide a soft pressing pad to come the pressing wafer.
For letting the foregoing of the present invention can be more obviously understandable, hereinafter is special lifts preferred embodiment, and cooperates appended graphicly, elaborates as follows:
Description of drawings
Fig. 1 shows the decomposing section according to wafer carrying plate structure, wafer and the soft pressing pad of one embodiment of the invention;
Fig. 2 shows the top view according to the wafer carrying plate structure of one embodiment of the invention;
Fig. 3 A to Fig. 3 D shows that the wafer according to one embodiment of the invention is engaged in the schematic flow sheet on the wafer carrying plate structure;
Fig. 4 shows the use profile according to wafer carrying plate structure, wafer and the soft pressing pad of another embodiment of the present invention;
Fig. 5 shows the use profile according to wafer carrying plate structure, wafer and the soft pressing pad of another embodiment of the present invention; And
Fig. 6 shows the use profile according to wafer carrying plate structure, wafer and the soft pressing pad of another embodiment of the present invention.
Embodiment
Below the explanation of each embodiment be with reference to additional graphic, can be in order to illustration the present invention in order to the specific embodiment of implementing.The direction term that the present invention mentioned, for example " on ", D score, " preceding ", " back ", " left side ", " right side ", " interior ", " outward ", " side " etc., only be direction with reference to annexed drawings.Therefore, the direction term of use is in order to explanation and understands the present invention, but not in order to restriction the present invention.
In the drawings, the unit of structural similarity is to represent with same numeral.
Please with reference to Fig. 1, it shows the decomposing section according to wafer carrying plate structure, wafer and the soft pressing pad of one embodiment of the invention.Wafer carrying plate structure 110 can be used for carrying wafer 101 to carry out for example high temperature process processing.The lower surface of this wafer 101 is provided with projection 102, and the height of projection 102 can be between 30～200 microns.
Wafer carrying plate structure 110 can be integrated circular slab body structure, and it can be processed by the material with the variation of high strength and low temperature, for example silicon.Wafer carrying plate structure 110 can have supporting region A and Support B.Supporting region A and Support B can be an integrated concentric structure, also can add a Support B around supporting region A.Supporting region A is used to supply wafer 101 to put.Soft pressing pad 103 is placed on the wafer 101, with protection wafer 101, avoids wafer 101 in the high temperature process processing procedure, to be damaged, and Support B can be used for supporting soft pressing pad 103.
Please with reference to Fig. 2, it shows the top view according to the wafer carrying plate structure of one embodiment of the invention.Wafer carrying plate structure 110 for example is a circular configuration; Supporting region A has a length (diameter) R and Support B has a width W 1; Width W 1 is 5%～20% of diameter R, supports soft pressing pad 103 and forms an accommodation space to hold knitting layer 120 to reach effectively.So be not limited thereto, wafer carrying plate structure 110 also can be non-circular structure.In addition, the width W 1 of Support B can change in response to the projection of wafer 101 102 height, for instance, if the height of projection 102 is when 30～60 microns (um), the width W 1 of Support B can be supporting region A diameter R 5%～10%; If the height of projection 102 is when 60～100um, the width W 1 of Support B can be supporting region A diameter R 10%～15%; If the height of projection 102 is when 100～200um, the width W 1 of Support B can be supporting region A diameter R 15%～20%.
Please with reference to Fig. 3 A to Fig. 3 D, it shows that the wafer according to one embodiment of the invention is engaged in the schematic flow sheet on the wafer carrying plate structure.
Shown in Fig. 3 A and Fig. 3 B, a wafer carrying plate structure 110 is provided, and forms knitting layer 120 on the supporting region A of wafer carrying plate structure 110.The material of knitting layer 120 can be the thermoplasticity joint glue, is used for temporarily engaging wafer 101 in wafer carrying plate structure 110, and carrying out processed, and knitting layer 120 can be removed after processing, to remove engaging of wafer 101 and wafer carrying plate structure 110.
Shown in Fig. 3 C and Fig. 3 D, when engaging wafer 101, weighed wounded for fear of upper surface or its assembly of wafer 101 in 110 last times of wafer carrying plate structure; Can use soft pressing pad 103 to pressurize wafer 101 on knitting layer 120; At this moment, the soft pressing pad 103 that can pressurize through blowing, with pressing wafer 101 on knitting layer 120; And the knitting layer 120 on the heating wafer carrying plate structure 110, to engage wafer 101 on carrying plate structure 110.In the process of wafer carrying plate structure 100, wafer 101 is to be engaged on the supporting region A of wafer carrying plate structure 110 at applying wafer 101, and the soft pressing pad 103 of part that exceeds supporting region A can be supported on the Support B of wafer carrying plate structure 110.And in the process that heating engages; Knitting layer 120 has flowability; Support B by carrying plate structure 110; The material of the knitting layer 120 that flows can be around pressurized process outwards flow to supporting region A Support B, the knitting layer 120 that Support B can provide enough spaces to shelve outflow, the height projection of the knitting layer 120 that prevents to flow out; Knitting layer projection effectively to avoid flowing in the prior art is piled up in the limited rim space of supporting region, and causes the problem of the in uneven thickness or warpage of knitting layer.
Therefore; By the Support B of wafer carrying plate structure 100, can support soft pressing pad 103, and can be provided at the flow region that heats knitting layer 120 in the process that engages; Overshooting shape to avoid mobile knitting layer 120 is piled up, thereby improves the problem of the in uneven thickness or warpage of knitting layer.
Please with reference to Fig. 4, it shows the use profile according to wafer carrying plate structure, wafer and the soft pressing pad of another embodiment of the present invention.In another embodiment; Wafer carrying plate structure 210 can comprise loading plate 211 and ring pad 212, and ring pad 212 is placed on around the loading plate 211, wherein; Supporting region A is formed on the surface of loading plate 211, and Support B is formed on the surface of ring pad 212.Loading plate 211 can be processed by the material with the variation of high strength and low temperature, for example silicon.Ring pad 212 can be made by exotic material, and loading plate 211 can be identical or different with the material of ring pad 212.Wherein, knitting layer 120 is to coat on the supporting region A of loading plate 211.
In the process of wafer carrying plate structure 210, wafer 101 is to be engaged on the supporting region A of loading plate 211 at applying wafer 101, and the soft pressing pad 103 of part that exceeds supporting region A can be supported on the ring pad 212 formed Support B.And in the process that heating engages; Ring pad 212 formed Support B by wafer carrying plate structure 210; The material of the knitting layer 120 that flows can outwards flow to supporting region A Support B on every side in pressurized process; Knitting layer 120 overshooting shapes to avoid flowing are piled up in the edge of supporting region A, and cause the problem of the in uneven thickness or warpage of knitting layer.
In this embodiment; The width W 2 of ring pad 212 for example is between 1～4cm; And can have clearance C between loading plate 211 and the ring pad 212; So that combination loading plate 211 and ring pad 212, and the knitting layer 120 that can allow to flow infiltrates in the clearance C, and then the overshooting shape that can reduce the knitting layer 120 that flows is piled up.The width of wherein said clearance C is 0.5～5 millimeter.
Please with reference to Fig. 5, it shows the use profile according to wafer carrying plate structure, wafer and the soft pressing pad of another embodiment of the present invention.The ring pad 212 have a recess 213, and loading plate 211 can be placed in the ring pad 212 recess 213 in, wherein, the upper surface of loading plate 211 can with the ring pad 212 the upper surface copline.
Please with reference to Fig. 6, it shows the use profile according to wafer carrying plate structure, wafer and the soft pressing pad of another embodiment of the present invention.The recess 213 of ring pad 212 can have a perforate 214, and exposes the bottom surface of loading plate 211.And loading plate 211 can be placed in the ring pad 212 recess 213 in, wherein, the upper surface of loading plate 211 can with the ring pad 212 the upper surface copline.
In sum; Though the present invention discloses as above with preferred embodiment; But above-mentioned preferred embodiment is not that those of ordinary skill in the art is not breaking away from the spirit and scope of the present invention in order to restriction the present invention; All can do various changes and retouching, so protection scope of the present invention is as the criterion with the scope that claim defines.
Claims (10)
1. wafer carrying plate structure comprises:
One supporting region is used to carry a wafer; And
One Support, be formed at said supporting region around, the width of wherein said Support be said supporting region length 5%～20%.
2. wafer carrying plate structure according to claim 1 is characterized in that: the plate body structure that the supporting region of said wafer carrying plate structure and Support are formed in one.
3. wafer carrying plate structure according to claim 1; It is characterized in that: said wafer carrying plate structure comprises loading plate and ring pad; Said ring pad is placed on around the said loading plate; Said supporting region is to be formed on the surface of said loading plate, and said Support is to be formed on the surface of said ring pad.
4. wafer carrying plate structure according to claim 3 is characterized in that: have the gap between said loading plate and the said ring pad, the width in said gap is 0.5～5 millimeter.
5. wafer carrying plate structure according to claim 3 is characterized in that: said ring pad has a recess, and said loading plate is placed in the said recess of said ring pad.
6. wafer carrying plate structure according to claim 5 is characterized in that: the said recess of said ring pad has a perforate, and exposes the bottom surface of said loading plate.
7. a wafer joint method is used to engage wafer to wafer carrying plate structure, comprising:
One wafer carrying plate structure is provided, and said wafer carrying plate structure has a supporting region and a Support, said Support be formed at said supporting region around, the width of wherein said Support be said supporting region length 5%～20%;
Form a knitting layer on said supporting region;
Provide a wafer to be engaged on the said knitting layer; And
Provide a soft pressing pad to come the said wafer of pressing.
8. wafer joint method according to claim 7 is characterized in that: said knitting layer outwards flows to said supporting region Support on every side in the process of the said wafer of pressing pad pressing.
9. wafer joint method according to claim 7 is characterized in that: when using said soft pressing pad to come the said wafer of pressing, through the said soft pressing pad that pressurizes of blowing, with the said wafer of pressing on said knitting layer.
10. wafer joint method according to claim 7 is characterized in that: when engaging said wafer in said knitting layer, heat said knitting layer, to engage said wafer on said wafer carrying plate structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102446465A CN102810518A (en) | 2012-07-13 | 2012-07-13 | Wafer loading board structure and wafer bonding method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102446465A CN102810518A (en) | 2012-07-13 | 2012-07-13 | Wafer loading board structure and wafer bonding method |
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| CN102810518A true CN102810518A (en) | 2012-12-05 |
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| CN2012102446465A Pending CN102810518A (en) | 2012-07-13 | 2012-07-13 | Wafer loading board structure and wafer bonding method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10277928A (en) * | 1997-03-31 | 1998-10-20 | Hitachi Ltd | Polishing device |
| CN200981890Y (en) * | 2006-08-25 | 2007-11-28 | 联萌科技股份有限公司 | Modified semiconductor machine bench |
| CN102110632A (en) * | 2009-11-17 | 2011-06-29 | 东京毅力科创株式会社 | Substrate mounting table of substrate processing apparatus |
| CN102468207A (en) * | 2010-10-29 | 2012-05-23 | 株式会社迪思科 | Wafer supporting plate and method for using wafer supporting plate |
-
2012
- 2012-07-13 CN CN2012102446465A patent/CN102810518A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10277928A (en) * | 1997-03-31 | 1998-10-20 | Hitachi Ltd | Polishing device |
| CN200981890Y (en) * | 2006-08-25 | 2007-11-28 | 联萌科技股份有限公司 | Modified semiconductor machine bench |
| CN102110632A (en) * | 2009-11-17 | 2011-06-29 | 东京毅力科创株式会社 | Substrate mounting table of substrate processing apparatus |
| CN102468207A (en) * | 2010-10-29 | 2012-05-23 | 株式会社迪思科 | Wafer supporting plate and method for using wafer supporting plate |
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Application publication date: 20121205 |