TWI569363B - A load device, a reaction chamber and a semiconductor processing device - Google Patents
A load device, a reaction chamber and a semiconductor processing device Download PDFInfo
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- TWI569363B TWI569363B TW103146445A TW103146445A TWI569363B TW I569363 B TWI569363 B TW I569363B TW 103146445 A TW103146445 A TW 103146445A TW 103146445 A TW103146445 A TW 103146445A TW I569363 B TWI569363 B TW I569363B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Description
本發明涉及微電子加工技術領域，具體地，涉及一種承載裝置、反應腔室及半導體加工裝置。 The present invention relates to the field of microelectronic processing technology, and in particular to a carrier device, a reaction chamber, and a semiconductor processing device.
在積體電路的製造過程中，通常採用物理氣相沉積(Physical Vapor Deposition，以下簡稱PVD)技術進行在晶片上沉積金屬層等材料的沉積製程。如，用於在LED晶片上製備ITO(Indium Tin Oxides，奈米銦錫金屬氧化物)薄膜。在實施製程時，由於LED晶片的尺寸較小(通常為2英寸或4英寸等)，這就需要承載裝置具有可同時承載多個LED晶片的托盤，以及將托盤固定在製程腔室內的基座上的壓環，以實現同時在多個LED晶片上製備ITO薄膜。 In the manufacturing process of an integrated circuit, a physical vapor deposition (PVD) technique is generally used to perform a deposition process for depositing a metal layer or the like on a wafer. For example, for preparing an ITO (Indium Tin Oxides) film on an LED wafer. When the process is implemented, since the size of the LED chip is small (usually 2 inches or 4 inches, etc.), it is required that the carrier has a tray that can simultaneously carry a plurality of LED chips, and a base that fixes the tray in the process chamber. The upper pressure ring is used to simultaneously prepare an ITO film on a plurality of LED wafers.
第1圖為現有的PVD裝置的剖視圖。如第1圖所示，PVD裝置包括反應腔室10，在反應腔室10內的頂部設置有靶材14；在反應腔室10內，且位於靶材14的下方設置有承載裝置，該承載裝置包括托盤12、基座11和壓環13，其中，托盤12用於承載多個晶片，如第2圖所示；基座11用於承載托盤12，並且基座11可上下移動，以帶動托盤12及其所承載的晶片能夠上升至製程位置或下降至裝卸位置；當基座11下降，以使晶片離開製程位置時，壓環13由固定在反應腔室10的側壁上的內襯15支撐，而當基座11上升，以使晶片位於製程位置時，此時托盤12將壓環13頂起，壓環13借助自身重 力壓住托盤12上表面的邊緣區域，以將托盤12固定在基座11上。 Fig. 1 is a cross-sectional view showing a conventional PVD device. As shown in FIG. 1, the PVD device includes a reaction chamber 10 in which a target 14 is disposed at the top of the reaction chamber 10; and within the reaction chamber 10, and under the target 14, a carrier device is disposed. The device comprises a tray 12, a base 11 and a pressure ring 13, wherein the tray 12 is for carrying a plurality of wafers, as shown in Fig. 2; the base 11 is for carrying the tray 12, and the base 11 is movable up and down to drive The tray 12 and the wafer it carries can be raised to the process position or lowered to the loading and unloading position; when the susceptor 11 is lowered to move the wafer away from the process position, the pressure ring 13 is affixed to the lining 15 of the side wall of the reaction chamber 10. Supporting, and when the susceptor 11 is raised to place the wafer in the process position, at this time the tray 12 lifts the pressure ring 13 and the pressure ring 13 is heavy by itself The force presses against the edge region of the upper surface of the tray 12 to secure the tray 12 to the base 11.
上述壓環13的具體結構如第3圖所示，在製程位置時，壓環13在徑向方向上延伸至托盤12上表面的邊緣區域並貼合在該邊緣區域處，由於二者的貼合面完全貼合，因而在實際應用中會產生這樣的問題，即：在完成薄膜沉積製程之後，沉積在托盤12上表面的薄膜與沉積在壓環13上表面的薄膜會在壓環13與托盤12上表面的邊緣區域的接合處連在一起，這樣，當基座11下降，壓環13與托盤12二者的貼合面相互脫離時，位於托盤12上表面與壓環13上表面的接合處的薄膜會被撕裂並脫落下來形成污染顆粒。 The specific structure of the pressure ring 13 is as shown in FIG. 3, and in the process position, the pressure ring 13 extends in the radial direction to the edge region of the upper surface of the tray 12 and fits at the edge region due to the sticking of the two. The face is completely conformed, so that in practical applications, the film deposited on the upper surface of the tray 12 and the film deposited on the upper surface of the pressure ring 13 will be in the pressure ring 13 after the film deposition process is completed. The joints of the edge regions of the upper surface of the tray 12 are joined together, such that when the base 11 is lowered and the contact faces of the press ring 13 and the tray 12 are separated from each other, the upper surface of the tray 12 and the upper surface of the pressure ring 13 are The film at the joint is torn and peeled off to form contaminating particles.
本發明旨在至少解決現有技術中存在的技術問題之一，提出了一種承載裝置、反應腔室及半導體加工裝置，其不僅可以避免在壓環與托盤相互脫離時形成污染顆粒，而且還可以防止壓環損壞托盤。 The present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a carrier device, a reaction chamber and a semiconductor processing device, which can not only prevent the formation of contaminating particles when the pressure ring and the tray are separated from each other, but also prevent it from being prevented. The pressure ring damages the tray.
為實現本發明的目的而提供一種承載裝置，其包括托盤、基座和壓環，其中，該托盤用於承載被加工工件；該基座用於承載托盤；該壓環包括壓片部，用於在製程位置時壓住該托盤上表面的邊緣區域，以將該托盤固定在該基座上；並且該壓環的壓片部的下表面具有均呈環形的第一貼合區和第一懸空區，該第一懸空區環繞在該壓環的環孔的週邊，該第一貼合區環繞在該第一懸空區的週邊；該托盤上表面的邊緣區域具有均呈環形的第二貼合區和第二懸空區，該第二貼合區處於該托盤上表面的邊緣區域中的週邊，該第二懸空區環繞在該第二貼合區的內側；並且在製程位置時，該第一貼合區與該第二貼合區彼此貼合，該第一懸空區和該第二懸 空區在豎直方向上存在豎直間距；並且該第一貼合區的內側邊沿與該托盤的中心軸線之間的距離同該第二貼合區的內側邊沿與該托盤的中心軸線之間的距離相等，該第一懸空區的內側邊沿與該托盤的中心軸線之間的距離不大於該第二懸空區的內側邊沿與該托盤的中心軸線之間的距離。 To achieve the object of the present invention, there is provided a carrying device comprising a tray, a base and a pressure ring, wherein the tray is for carrying a workpiece to be processed; the base is for carrying a tray; the pressure ring comprises a pressing portion for Pressing an edge region of the upper surface of the tray at the process position to fix the tray on the base; and the lower surface of the pressing portion of the pressure ring has a first bonding area that is annular and first a first floating area surrounding the annular hole of the pressure ring, the first bonding area surrounding the periphery of the first floating area; the edge area of the upper surface of the tray has a second sticker each having a ring shape a junction area in a periphery of an edge region of the upper surface of the tray, the second floating area surrounding the inside of the second bonding area; and in the process position, the first a bonding area and the second bonding area are attached to each other, the first floating area and the second hanging The empty zone has a vertical spacing in the vertical direction; and the distance between the inner edge of the first conforming zone and the central axis of the tray is between the inner edge of the second conforming zone and the central axis of the tray The distance is equal, and the distance between the inner edge of the first suspended region and the central axis of the tray is not greater than the distance between the inner edge of the second suspended region and the central axis of the tray.
其中，該第二懸空區被設置為自該第二貼合區所在平面朝向該托盤的下表面凹進的凹部。 Wherein, the second suspended area is disposed as a recess recessed from a plane of the second bonding area toward a lower surface of the tray.
其中，該第一懸空區和該第一貼合區處於同一水平面，並且在製程位置時，該第一懸空區的內側邊沿與該托盤的中心軸線之間的距離小於該第二懸空區的內側邊沿與該托盤的中線軸線之間的距離。 Wherein the first suspended area and the first bonding area are at the same horizontal plane, and in the process position, the distance between the inner edge of the first suspended area and the central axis of the tray is smaller than the inner side of the second suspended area The distance between the edge and the centerline axis of the tray.
其中，該第一懸空區被設置成自該第一貼合區所在平面朝向該壓片部的上表面凹進的凹部，且該第一懸空區和該第一貼合區之間光滑過渡。 The first floating area is disposed as a recess recessed from the plane of the first bonding area toward the upper surface of the pressing portion, and a smooth transition between the first floating area and the first bonding area.
其中，該凹部表現為凹槽或者斜面的形式。 Wherein the recess is in the form of a groove or a bevel.
其中，該第一懸空區的寬度大於第一豎直間距。其中，該第一懸空區的寬度為在製程位置時該第一懸空區在該第二貼合區所在平面的正投影的寬度；該第一豎直間距為該第一懸空區的內側邊沿到該第一貼合區所在平面之間的垂直距離和與製程位置時該第二懸空區中的與該第一懸空區的內側邊沿相對應的位置到該第二貼合區所在平面之間的垂直距離二者之和。 Wherein the width of the first suspended area is greater than the first vertical spacing. The width of the first suspended area is the width of the orthographic projection of the first floating area in the plane of the second bonding area when the processing position is; the first vertical spacing is the inner edge of the first floating area to a vertical distance between the planes of the first bonding area and a position corresponding to an inner edge of the first floating area in the second floating area to a plane of the second bonding area The vertical distance is the sum of the two.
其中，該第一豎直間距的取值範圍在0.5~1mm。 The first vertical spacing ranges from 0.5 to 1 mm.
其中，該第一懸空區的寬度與該第一豎直間距之間的比值為5~6。 The ratio between the width of the first floating area and the first vertical spacing is 5-6.
其中，該壓環採用不銹鋼材料製作。 Among them, the pressure ring is made of stainless steel.
其中，該托盤採用鋁或鋁合金材料製作。 Among them, the tray is made of aluminum or aluminum alloy material.
作為另一個技術方案，本發明還提供一種反應腔室，其包括承載裝置，並且該承載裝置可以採用上述任意方案提供的承載裝置。 As another technical solution, the present invention also provides a reaction chamber including a carrier device, and the carrier device can employ the carrier device provided by any of the above schemes.
其中，本發明提供的反應腔室還包括基座升降機構，該基座升降機構用於驅動該基座作升降運動，以使置於其上的該托盤上的被加工工件上升至製程位置或下降至裝卸位置，並且在該反應腔室的腔室側壁內側設置有環形內襯，該環形內襯的下端向內彎曲，並延伸至該壓環的底部；當該基座升降機構驅動該基座下降，以使被加工工件離開該製程位置時，該壓環由該環形內襯的下端支撐；當該基座升降機構驅動該基座上升，以使被加工工件位於該製程位置時，該壓環脫離該環形內襯的下端，並借助自身重力壓住該托盤上表面的邊緣區域。 Wherein, the reaction chamber provided by the present invention further includes a base lifting mechanism for driving the base for lifting movement to raise the workpiece to be processed on the tray placed thereon to a process position or Dropped to the loading and unloading position, and an annular inner liner is disposed inside the side wall of the reaction chamber, the lower end of the annular inner liner is bent inwardly and extends to the bottom of the pressure ring; when the base lifting mechanism drives the base When the seat is lowered so that the workpiece to be processed leaves the process position, the pressure ring is supported by the lower end of the annular liner; when the base lifting mechanism drives the base to rise so that the workpiece to be processed is located at the process position, The pressure ring is disengaged from the lower end of the annular liner and is pressed against the edge region of the upper surface of the tray by its own weight.
作為再一個技術方案，本發明還提供一種半導體加工裝置，其包括反應腔室，並且該反應腔室可以採用本發明上述任意方案提供的反應腔室。 As still another technical solution, the present invention also provides a semiconductor processing apparatus including a reaction chamber, and the reaction chamber can employ the reaction chamber provided by any of the above aspects of the present invention.
本發明具有以下有益效果：本發明提供的承載裝置，其壓環的壓片部的下表面具有均呈環形的第一貼合區和第一懸空區，對應地，托盤上表面的邊緣區域具有均呈環形的第二貼合區和第二懸空區，並且當托盤和壓環處於製程位置時，第一貼合區與第二貼合區彼此貼合，第一懸空區和第二懸空區在豎直方向上存在豎直間距。這樣，在薄膜沉積製程過程中，沉積在托盤上表面的薄膜和沉積在壓片部上表面的薄膜在豎直方向上也存在豎直間距，因而二者 不會連接在一起，從而可以避免出現先前技術中所述的因托盤上表面的薄膜和壓環上表面的薄膜彼此連接在一起而在壓環與托盤相互脫離時使薄膜撕裂並造成污染顆粒的問題，進而提高產品品質及良率。 The present invention has the following beneficial effects: the carrying device provided by the present invention has a lower surface of the pressing portion of the pressure ring having a first bonding area and a first floating area which are both annular, and correspondingly, the edge area of the upper surface of the tray has The second bonding area and the second floating area are both annular, and when the tray and the pressing ring are in the processing position, the first bonding area and the second bonding area are in contact with each other, the first floating area and the second floating area There is a vertical spacing in the vertical direction. Thus, during the thin film deposition process, the film deposited on the upper surface of the tray and the film deposited on the upper surface of the tablet portion also have a vertical pitch in the vertical direction, so that both They are not connected together, so that the film of the upper surface of the tray and the film of the upper surface of the pressure ring are connected to each other as described in the prior art, and the film is torn and contaminated when the pressure ring and the tray are separated from each other. The problem, which in turn improves product quality and yield.
本發明提供的反應腔室，其通過採用本發明提供的上述承載裝置，不僅可以提高產品品質及良率，而且還可以降低裝置的使用成本。 The reaction chamber provided by the invention can not only improve product quality and yield, but also reduce the use cost of the device by adopting the above-mentioned carrying device provided by the present invention.
本發明提供的半導體加工裝置，其通過採用本發明提供的上述反應腔室，不僅可以提高產品品質及良率，而且還可以降低裝置的使用成本。 The semiconductor processing apparatus provided by the present invention can not only improve product quality and yield, but also reduce the use cost of the apparatus by using the above-described reaction chamber provided by the present invention.
10、30‧‧‧反應腔室 10, 30‧‧‧Reaction chamber
11、21‧‧‧基座 11, 21‧‧‧ Pedestal
12、22‧‧‧托盤 12, 22‧‧‧ tray
13、23‧‧‧壓環 13, 23‧‧ ‧ pressure ring
14、31‧‧‧靶材 14, 31‧‧‧ targets
15‧‧‧內襯 15‧‧‧ lining
32‧‧‧環形內襯 32‧‧‧Ring lining
33‧‧‧基座升降機構 33‧‧‧Base lifting mechanism
221‧‧‧凹槽 221‧‧‧ Groove
231‧‧‧壓片部 231‧‧‧Pressing Department
232‧‧‧環孔 232‧‧‧ ring hole
2211、2311‧‧‧懸空區 2211, 2311‧‧‧ vacant area
2212、2312‧‧‧貼合區 2212, 2312‧‧ ‧ compliant area
H‧‧‧深度 H‧‧‧ Depth
I‧‧‧區域 I‧‧‧ area
L‧‧‧寬度 L‧‧‧Width
第1圖為現有的PVD裝置的剖視圖；第2圖為托盤的示意圖；第3圖為沉積在托盤上表面與壓環上表面的接合處的薄膜的分佈圖；第4A圖為本發明第一實施例提供的承載裝置的局部示意圖；第4B圖為第4A圖中I區域的局部放大圖；第4C圖為第4A圖中承載裝置的托盤的俯視圖；第4D圖為使用本發明實施例提供的承載裝置時沉積在托盤上表面與壓環上表面的接合處的薄膜的分佈圖；第5圖為本發明第二實施例提供的承載裝置的局部放大示意圖；第6圖為本發明第三實施例提供的承載裝置的局部放大示意圖；第7圖為被加工工件位於製程位置時本發明實施例提供的反應腔室的剖視圖；以及第8圖為被加工工件位於裝卸位置時本發明實施例提供的反應腔室的 剖視圖。 1 is a cross-sectional view of a conventional PVD device; FIG. 2 is a schematic view of a tray; and FIG. 3 is a distribution view of a film deposited on a joint between an upper surface of the tray and the upper surface of the pressure ring; FIG. 4A is the first embodiment of the present invention; FIG. 4B is a partial enlarged view of the I area in FIG. 4A; FIG. 4C is a top view of the tray of the carrying device in FIG. 4A; FIG. 4D is a view showing an embodiment of the present invention. FIG. 5 is a partial enlarged view of a carrying device provided by a second embodiment of the present invention; FIG. 6 is a third embodiment of the present invention; A partially enlarged schematic view of the carrying device provided by the embodiment; FIG. 7 is a cross-sectional view of the reaction chamber provided by the embodiment of the present invention when the workpiece is in the process position; and FIG. 8 is a view of the embodiment of the present invention when the workpiece to be processed is in the loading and unloading position Provided by the reaction chamber Cutaway view.
為使本領域的技術人員更好地理解本發明的技術方案，在此對本發明的實質進行闡述。本發明的實質是，提供一種承載裝置，其包括托盤、基座和壓環，其中，托盤用於承載被加工工件；基座用於承載托盤；壓環包括壓片部，用於在製程位置時壓住托盤上表面的邊緣區域，以將托盤固定在基座上；並且，該壓環的壓片部的下表面具有均呈環形的第一貼合區和第一懸空區，第一懸空區環繞在壓片部的環孔的週邊，第一貼合區環繞在第一懸空區的週邊；托盤上表面的邊緣區域具有均呈環形的第二貼合區和第二懸空區，第二貼合區處於托盤上表面的邊緣區域中的週邊，第二懸空區環繞在第二貼合區的內側；並且在製程位置時，第一貼合區與第二貼合區彼此貼合，第一懸空區和第二懸空區在豎直方向上存在豎直間距；第一貼合區的內側邊沿與托盤的中心軸線之間的距離同第二貼合區的內側邊沿與托盤的中心軸線之間的距離相等，第一懸空區的內側邊沿與托盤的中心軸線之間的距離不大於第二懸空區的內側邊沿與托盤的中心軸線之間的距離。 In order to make those skilled in the art better understand the technical solutions of the present invention, the essence of the present invention will be described herein. The essence of the invention is to provide a carrying device comprising a tray, a base and a pressure ring, wherein the tray is used for carrying the workpiece to be processed; the base is for carrying the tray; the pressure ring comprises a pressing portion for the processing position Pressing the edge region of the upper surface of the tray to fix the tray on the base; and the lower surface of the pressing portion of the pressure ring has a first bonding area and a first floating area, both of which are annular, the first floating The area surrounds the periphery of the ring hole of the pressing portion, the first bonding area surrounds the periphery of the first floating area; the edge area of the upper surface of the tray has a second bonding area and a second floating area which are both annular, and the second The bonding area is in the periphery of the edge area of the upper surface of the tray, and the second floating area surrounds the inner side of the second bonding area; and in the process position, the first bonding area and the second bonding area are attached to each other, a suspended space and a second suspended area have a vertical spacing in a vertical direction; a distance between an inner edge of the first bonding area and a central axis of the tray is the same as an inner edge of the second bonding area and a central axis of the tray Equal distance, first suspended area Distance between the center axis of the distance between the center axis of the inside edge of the tray and the tray is not greater than the inside edge of the second free zones.
下面結合附圖來對本發明提供的承載裝置、反應腔室及半導體加工裝置進行詳細描述。該實施例的示例在附圖中示出，其中自始至終相同或類似的標號表示相同或類似的元件或具有相同或類似功能的元件。下面通過參考附圖描述的實施例是示例性的，僅用於解釋本發明，而不能理解為對本發明的限制。並且在本發明的描述中，術語“上”、“下”、“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關 係，僅是為了便於描述本發明和簡化描述，而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作，因此不能理解為對本發明的限制。 The carrier device, the reaction chamber and the semiconductor processing device provided by the present invention will be described in detail below with reference to the accompanying drawings. The examples of the embodiments are shown in the drawings, wherein the same or similar reference numerals are used to refer to the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are intended to be illustrative of the invention and are not to be construed as limiting. And in the description of the present invention, the orientation or positional relationship of the terms "upper", "lower", "inside", "outside", etc. is based on the orientation or position shown in the drawings. The present invention is to be construed as being limited to the invention and is not intended to be construed as a limitation of the invention.
第4A圖為本發明第一實施例提供的承載裝置的局部示意圖。第4B圖為第4A圖中I區域的局部放大圖。第4C圖為第4A圖中承載裝置的托盤的俯視圖。請一併參閱第4A圖、第4B圖和第4C圖，承載裝置包括托盤22、基座21和壓環23。其中，托盤22用於承載被加工工件；基座21用於承載托盤22；壓環23具有壓片部231，用於在製程位置時壓住托盤22的上表面的邊緣區域，以將該托盤22固定在基座21上。 4A is a partial schematic view of a carrier device according to a first embodiment of the present invention. Fig. 4B is a partial enlarged view of the I area in Fig. 4A. Figure 4C is a top plan view of the tray of the carrier device of Figure 4A. Referring to FIGS. 4A, 4B, and 4C, the carrier device includes a tray 22, a base 21, and a pressure ring 23. Wherein, the tray 22 is used to carry the workpiece to be processed; the base 21 is used to carry the tray 22; the pressure ring 23 has a pressing portion 231 for pressing the edge region of the upper surface of the tray 22 in the process position to the tray 22 is fixed to the base 21.
其中，壓片部231類似於一個環形箍，其中心為中空的環孔，其下表面呈環形且具有第一懸空區2311和第一貼合區2312。並且，該第一懸空區2311和第一貼合區2312均呈環形且彼此嵌套，即，第一懸空區2311環繞在壓環23的壓片部231的環孔232的週邊，第一貼合區2312環繞在第一懸空區2311的週邊。第一懸空區2311和第一貼合區2312處於同一水平面，即壓片部231的下表面為一個平面。 The pressing portion 231 is similar to an annular hoop having a hollow annular hole at the center thereof, and has a lower surface having a circular shape and having a first floating portion 2311 and a first bonding portion 2312. Moreover, the first floating area 2311 and the first bonding area 2312 are both annular and nested with each other, that is, the first floating area 2311 surrounds the periphery of the ring hole 232 of the pressing portion 231 of the pressure ring 23, the first sticker The merged area 2312 surrounds the periphery of the first suspended area 2311. The first floating area 2311 and the first bonding area 2312 are at the same horizontal plane, that is, the lower surface of the pressing portion 231 is a flat surface.
該托盤22的上表面的邊緣區域也呈環形，且具有第二懸空區2211和第二貼合區2212。並且，該第二懸空區2211和第二貼合區2212均呈環形且彼此嵌套，即，第二貼合區2212處於托盤22的上表面的邊緣區域中的最週邊，第二懸空區2211環繞在第二貼合區2212的內側。該第二懸空區2211被設置為自該第二貼合區2212所在平面朝向托盤22的下表面凹進的凹部，具體地，該第二懸空區2211被設置為凹槽結構(例如第4B圖和第4C圖中的凹槽221)，即，該托盤22的上表面的邊緣區域為臺階狀。 The edge region of the upper surface of the tray 22 is also annular and has a second suspended area 2211 and a second conforming area 2212. Moreover, the second floating area 2211 and the second bonding area 2212 are both annular and nested with each other, that is, the second bonding area 2212 is at the outermost edge in the edge area of the upper surface of the tray 22, and the second floating area 2211 Surrounding the inside of the second bonding area 2212. The second floating area 2211 is disposed as a recess recessed from the plane of the second bonding area 2212 toward the lower surface of the tray 22, and specifically, the second floating area 2211 is configured as a groove structure (for example, FIG. 4B And the groove 221) in Fig. 4C, that is, the edge region of the upper surface of the tray 22 is stepped.
在製程過程中，當托盤22和壓環23處於製程位置時，壓環23的壓片部231的下表面壓住托盤22的上表面的邊緣區域，具體地，壓片部231的下表面的第一貼合區2312與托盤22的上表面的第二貼合區2212彼此貼合，第一懸空區2311和第二懸空區2211不相接觸且在豎直方向上存在豎直間距(即凹槽的深度)。此時，第一貼合區2312的內側邊沿與托盤22的中心軸線之間的距離同第二貼合區2212的內側邊沿與托盤22的中心軸線之間的距離相等；且第一懸空區2311的內側邊沿與托盤22的中心軸線之間的距離小於第二懸空區2211的內側邊沿與托盤22的中心軸線之間的距離，即，第一懸空區2311的寬度小於第二懸空區2211的寬度。其中，第一懸空區2311的寬度為在製程位置時該第一懸空區2311在第二貼合區2212所在平面的正投影的寬度；並且第二懸空區2211的寬度為在製程位置時該第二懸空區2211在第二貼合區2212所在平面的正投影的寬度。 During the manufacturing process, when the tray 22 and the pressure ring 23 are in the process position, the lower surface of the pressing portion 231 of the pressure ring 23 presses against the edge region of the upper surface of the tray 22, specifically, the lower surface of the pressing portion 231 The first bonding area 2312 and the second bonding area 2212 of the upper surface of the tray 22 are in contact with each other, and the first floating area 2311 and the second floating area 2211 are not in contact with each other and have a vertical pitch in the vertical direction (ie, concave The depth of the slot). At this time, the distance between the inner edge of the first bonding area 2312 and the central axis of the tray 22 is equal to the distance between the inner edge of the second bonding area 2212 and the central axis of the tray 22; and the first floating area 2311 The distance between the inner edge of the inner side and the central axis of the tray 22 is smaller than the distance between the inner edge of the second suspended area 2211 and the central axis of the tray 22, that is, the width of the first suspended area 2311 is smaller than the width of the second suspended area 2211. . The width of the first floating area 2311 is the width of the orthographic projection of the first floating area 2311 at the plane of the second bonding area 2212 at the processing position; and the width of the second floating area 2211 is the processing position. The width of the orthographic projection of the second suspended region 2211 at the plane of the second bonding region 2212.
由於第一懸空區2311和第二懸空區2211在豎直方向上存在豎直間距，因此在薄膜沉積製程過程中，沉積在托盤22的上表面的薄膜和沉積在壓片部23的上表面的薄膜在豎直方向上也存在豎直間距，因而這兩個薄膜是斷開的，根本不會連接在一起(如第4D圖所示)。因此，採用本實施例提供的承載裝置進行製程，不會出現先前技術中所述的因托盤上表面的薄膜和壓環上表面的薄膜彼此連接在一起而在壓環與托盤相互脫離時使薄膜撕裂並造成污染顆粒的問題，因而能夠提高產品品質及良率。 Since the first floating region 2311 and the second floating region 2211 have a vertical pitch in the vertical direction, the film deposited on the upper surface of the tray 22 and the upper surface of the tablet portion 23 are deposited during the thin film deposition process. The film also has a vertical spacing in the vertical direction so that the two films are broken and will not be joined together at all (as shown in Figure 4D). Therefore, the manufacturing process provided by the embodiment of the present invention does not occur in the prior art, and the film on the upper surface of the tray and the film on the upper surface of the pressure ring are connected to each other to form a film when the pressure ring and the tray are separated from each other. Tearing and causing problems with contaminated particles can improve product quality and yield.
此外，壓片部231的下表面為一個平面，可以避免該環形平面與托盤22上表面的邊緣區域相貼合的區域存在臺階或尖角等易損壞托盤22的結構，在這種情況下，即使壓環23採用不銹鋼材料製作，且托盤22採 用鋁或鋁合金製作，該環形平面也可以防止不銹鋼壓環23的壓片部231壓壞鋁托盤22，或者壓片部231和鋁托盤22因熱膨脹變形程度的差異而卡在一起。 In addition, the lower surface of the pressing portion 231 is a flat surface, and it is possible to prevent the structure of the tray 22 from being damaged by a step or a sharp corner in a region where the annular plane is in contact with the edge region of the upper surface of the tray 22, in which case, Even if the pressure ring 23 is made of stainless steel, and the tray 22 is taken Made of aluminum or an aluminum alloy, the annular flat surface can also prevent the pressing portion 231 of the stainless steel pressing ring 23 from crushing the aluminum tray 22, or the pressing portion 231 and the aluminum tray 22 can be stuck together due to the difference in the degree of thermal expansion deformation.
另外，第一懸空區2311的寬度L大於第二懸空區2211所對應的凹槽的深度H，以進一步防止托盤22被壓片部231損壞。其中，第一懸空區2311的寬度L為該第一懸空區2311在第二貼合區2212所在平面的正投影的寬度，即該第一懸空區2311所表示的圓環的寬度；在實際應用中，上述寬度L、深度H以及二者的比值應綜合考慮托盤22和壓片部231在高溫環境下的熱膨脹變形程度，以及托盤22與壓片部231之間的相對位置誤差等因素而設定。較佳的，本實施例中的第二懸空區2211所對應的凹槽的深度H的取值範圍在0.5~1mm；並且寬度L與深度H的比值為5~6。通常，第二懸空區2211的寬度的取值範圍可以在6~8mm。 In addition, the width L of the first floating area 2311 is greater than the depth H of the groove corresponding to the second floating area 2211 to further prevent the tray 22 from being damaged by the pressing portion 231. The width L of the first floating area 2311 is the width of the orthographic projection of the first floating area 2311 in the plane of the second bonding area 2212, that is, the width of the ring represented by the first floating area 2311; In the above, the width L, the depth H, and the ratio of the two should be set in consideration of factors such as the degree of thermal expansion deformation of the tray 22 and the tableting portion 231 in a high temperature environment, and the relative position error between the tray 22 and the tableting portion 231. . Preferably, the depth H of the groove corresponding to the second floating area 2211 in the embodiment ranges from 0.5 to 1 mm; and the ratio of the width L to the depth H is 5 to 6. Generally, the width of the second suspended area 2211 may range from 6 to 8 mm.
較佳的，壓環23採用不銹鋼材料製作，以保證能夠具有足夠的硬度壓住托盤22。 Preferably, the pressure ring 23 is made of a stainless steel material to ensure that the tray 22 can be pressed with sufficient hardness.
較佳的，托盤22採用諸如鋁或鋁合金材料等的重量輕、導熱性能較好的材料製作。 Preferably, the tray 22 is made of a material having a light weight and a good thermal conductivity such as an aluminum or aluminum alloy material.
較佳的，第二貼合區2212和第二懸空區2211的接合處為光滑過渡，即，將第二貼合區2212和第二懸空區2211之間的拐角設置為圓角，以便進一步防止托盤22被壓片部231損壞，和/或進一步防止壓片部231和鋁托盤22因熱膨脹變形程度的差異而卡在一起。 Preferably, the junction of the second bonding area 2212 and the second floating area 2211 is a smooth transition, that is, the corner between the second bonding area 2212 and the second floating area 2211 is rounded to further prevent The tray 22 is damaged by the pressing portion 231, and/or further prevents the pressing portion 231 and the aluminum tray 22 from being stuck together due to the difference in degree of thermal expansion deformation.
請參閱第5圖，其中示出本發明第二實施例提供的承載裝置的局部放大示意圖。本實施例中，托盤22的上表面的邊緣區域所包含的第 二懸空區2211和第二貼合區2212二者在徑向上的位置及嵌套關係，以及壓片部231下表面所包含的第一懸空區2311和第一貼合區2312二者在徑向上的位置及嵌套關係，均類似於前述第一實施例，在此不再贅述。下面僅就與第一實施例的差別進行說明。 Referring to FIG. 5, a partially enlarged schematic view of a carrier device according to a second embodiment of the present invention is shown. In the embodiment, the edge area included in the upper surface of the tray 22 is included The position and the nesting relationship of both the second floating area 2211 and the second bonding area 2212 in the radial direction, and the first floating area 2311 and the first bonding area 2312 included in the lower surface of the pressing portion 231 are radially The position and the nesting relationship are similar to the foregoing first embodiment, and are not described herein again. Only the differences from the first embodiment will be described below.
在第二實施例中，壓片部231下表面被設置為臺階狀，具體地，第一懸空區2311被設置為自第一貼合區2312所在平面朝向壓片部231的上表面凹進的凹部，更具體地，相對於第一貼合區2312所在平面，該第一懸空區2311被設置為凹槽狀，且第一貼合區2312和第一懸空區2311的接合處為光滑過渡，即，將第一貼合區2312和第一懸空區2311之間的拐角設置為圓角。並且，托盤22的上表面的邊緣區域中的第二懸空區2211和第二貼合區2212處於同一水平面，即該托盤22的上表面的邊緣區域為一個平面，而非前述第一實施例中的臺階狀。 In the second embodiment, the lower surface of the pressing portion 231 is provided in a stepped shape, and specifically, the first floating portion 2311 is disposed to be recessed from the plane of the first bonding portion 2312 toward the upper surface of the pressing portion 231. The recess, more specifically, the first floating area 2311 is disposed in a groove shape with respect to the plane of the first bonding area 2312, and the joint of the first bonding area 2312 and the first floating area 2311 is a smooth transition. That is, the corner between the first bonding area 2312 and the first floating area 2311 is set to be rounded. Moreover, the second floating area 2211 and the second bonding area 2212 in the edge region of the upper surface of the tray 22 are at the same horizontal plane, that is, the edge area of the upper surface of the tray 22 is a plane instead of the foregoing first embodiment. Stepped.
在製程過程中，當壓片部231的下表面的第一貼合區2312與托盤22的上表面的第二貼合區2212彼此貼合時，因第一懸空區2311為凹槽結構，故而第一懸空區2311和第二懸空區2211不相接觸且在豎直方向上存在豎直間距(即凹槽的深度)。此時，第一貼合區2312的內側邊沿與托盤22的中心軸線之間的距離同第二貼合區2212的內側邊沿與托盤22的中心軸線之間的距離相等；且第一懸空區2311的內側邊沿與托盤22的中心軸線之間的距離等於第二懸空區2211的內側邊沿與托盤22的中心軸線之間的距離，即，第一懸空區2311的寬度等於第二懸空區2211的寬度。。 During the manufacturing process, when the first bonding area 2312 of the lower surface of the pressing portion 231 and the second bonding area 2212 of the upper surface of the tray 22 are attached to each other, since the first floating area 2311 is a groove structure, The first suspended area 2311 and the second suspended area 2211 are not in contact and there is a vertical pitch (i.e., the depth of the groove) in the vertical direction. At this time, the distance between the inner edge of the first bonding area 2312 and the central axis of the tray 22 is equal to the distance between the inner edge of the second bonding area 2212 and the central axis of the tray 22; and the first floating area 2311 The distance between the inner edge of the inner side and the central axis of the tray 22 is equal to the distance between the inner edge of the second suspended area 2211 and the central axis of the tray 22, that is, the width of the first suspended area 2311 is equal to the width of the second suspended area 2211. . .
本實施例中，由於第一懸空區2311和第二懸空區2211在豎直方向上存在豎直間距，因此在薄膜沉積製程過程中，沉積在托盤22的上表 面的薄膜和沉積在壓片部23的上表面的薄膜在豎直方向上也存在豎直間距，因而這兩個薄膜是斷開的，根本不會連接在一起。因此，採用本實施例提供的承載裝置進行製程，不會出現先前技術中所述的因托盤上表面的薄膜和壓環上表面的薄膜彼此連接在一起而在壓環與托盤相互脫離時使薄膜撕裂並造成污染顆粒的問題，因而能夠提高產品品質及良率。並且，第一貼合區2312和第一懸空區2311的接合處為光滑過渡，可以防止托盤22被壓片部231損壞，和/或防止壓片部231和鋁托盤22因熱膨脹變形程度的差異而卡在一起。 In this embodiment, since the first floating region 2311 and the second floating region 2211 have a vertical pitch in the vertical direction, the upper surface of the tray 22 is deposited during the thin film deposition process. The film of the face and the film deposited on the upper surface of the tableting portion 23 also have a vertical pitch in the vertical direction, so that the two films are broken and are not joined at all. Therefore, the manufacturing process provided by the embodiment of the present invention does not occur in the prior art, and the film on the upper surface of the tray and the film on the upper surface of the pressure ring are connected to each other to form a film when the pressure ring and the tray are separated from each other. Tearing and causing problems with contaminated particles can improve product quality and yield. Moreover, the joint of the first bonding area 2312 and the first floating area 2311 is a smooth transition, which can prevent the tray 22 from being damaged by the pressing portion 231, and/or prevent the difference in the degree of deformation of the pressing portion 231 and the aluminum tray 22 due to thermal expansion. And stuck together.
請參閱第6圖，其中示出本發明第三實施例提供的承載裝置的局部放大示意圖。本實施例與前述第二實施例的結構差別在於：本實施例中的壓片部231下表面的第一懸空區2311被設置為自第一貼合區2312所在平面朝向壓環23環孔和壓片部231的上表面傾斜的斜面，且第一貼合區2312和第一懸空區2311的接合處為光滑過渡，即，將第一懸空區2311和第一貼合區2312之間的拐角設置為圓角。 Referring to FIG. 6, there is shown a partially enlarged schematic view of a carrier device according to a third embodiment of the present invention. The difference between the structure of the second embodiment and the foregoing embodiment is that the first floating area 2311 of the lower surface of the pressing portion 231 in the embodiment is disposed from the plane of the first bonding area 2312 toward the ring hole of the pressure ring 23 and The inclined surface of the upper surface of the pressing portion 231 is inclined, and the joint of the first bonding area 2312 and the first floating area 2311 is a smooth transition, that is, a corner between the first floating area 2311 and the first bonding area 2312 Set to fillet.
在製程過程中，當壓片部231的下表面的第一貼合區2312與托盤22的上表面的第二貼合區2212彼此貼合時，因第一懸空區2311為凹槽結構，故而第一懸空區2311和第二懸空區2211不相接觸且在豎直方向上存在豎直間距，並且第一懸空區2311中的最靠近壓環23的環孔的位置與第二懸空區2211之間的豎直間距應大於沉積製程結束時托盤上表面所沉積的薄膜的厚度。這樣，在薄膜沉積製程結束時，沉積在托盤22的上表面的薄膜和沉積在壓片部23的上表面的薄膜在豎直方向上也存在一定間距，因而這兩個薄膜是斷開的，根本不會連接在一起。因此，採用本實施例提供的承 載裝置進行製程，不會出現先前技術中所述的因托盤23上表面的薄膜和壓環23上表面的薄膜彼此連接在一起而在壓環23與托盤22相互脫離時使薄膜撕裂並造成污染顆粒的問題。並且，第一貼合區2312和第一懸空區2311的接合處為光滑過渡，可以防止托盤22被壓片部231損壞，和/或防止壓片部231和鋁托盤22因熱膨脹變形程度的差異而卡在一起。 During the manufacturing process, when the first bonding area 2312 of the lower surface of the pressing portion 231 and the second bonding area 2212 of the upper surface of the tray 22 are attached to each other, since the first floating area 2311 is a groove structure, The first suspended area 2311 and the second suspended area 2211 are not in contact and have a vertical spacing in the vertical direction, and the position of the annular hole closest to the pressure ring 23 in the first floating area 2311 and the second floating area 2211 The vertical spacing between the two should be greater than the thickness of the film deposited on the upper surface of the tray at the end of the deposition process. Thus, at the end of the thin film deposition process, the film deposited on the upper surface of the tray 22 and the film deposited on the upper surface of the tableting portion 23 are also spaced apart in the vertical direction, so that the two films are broken. They won't be connected at all. Therefore, the bearing provided by the embodiment is adopted. The carrier device is processed without causing the film on the upper surface of the tray 23 and the film on the upper surface of the pressure ring 23 to be connected to each other as described in the prior art to tear the film when the pressure ring 23 and the tray 22 are separated from each other. The problem of contaminated particles. Moreover, the joint of the first bonding area 2312 and the first floating area 2311 is a smooth transition, which can prevent the tray 22 from being damaged by the pressing portion 231, and/or prevent the difference in the degree of deformation of the pressing portion 231 and the aluminum tray 22 due to thermal expansion. And stuck together.
需要指出的是，本發明提供的承載裝置並不僅限於前述三個實施例所述的結構，例如，還可以將第二懸空區2211設置成斜面的形式；或者還可以將第一懸空區2311和第二懸空區2211均設置成凹槽的形式；或者還可以將第一懸空區2311和第二懸空區2211均設置成斜面的形式，等等。事實上，可以將第一懸空區2311和第二懸空區2211二者之中的至少一個設置成凹部。進一步地，本發明提供的承載裝置，只要能夠滿足下述兩個條件的任何結構就都可以採用：條件一，在薄膜沉積製程結束時，沉積在托盤22的上表面的薄膜和沉積在壓片部23的上表面的薄膜在豎直方向上也存在一定間距，即這兩個薄膜並非連接在一起而是斷開的；條件二，在托盤22和壓片部231二者中，至少是在硬度較高的那一個上的懸空區和貼合區的接合處實現光滑過渡。其中，所謂光滑過渡包括懸空區和貼合區處於同一水平面(即接合處的角度為180度)的情況，也包括二者不處於同一水平面且拐角為圓角的情況。 It should be noted that the carrying device provided by the present invention is not limited to the structures described in the foregoing three embodiments. For example, the second floating area 2211 may be disposed in the form of a slope; or the first floating area 2311 may be The second suspended areas 2211 are each provided in the form of a groove; or the first suspended area 2311 and the second suspended area 2211 may each be provided in the form of a bevel, and the like. In fact, at least one of the first suspended area 2311 and the second suspended area 2211 may be provided as a recess. Further, the carrying device provided by the present invention can be used as long as any structure capable of satisfying the following two conditions: Condition 1, at the end of the film deposition process, the film deposited on the upper surface of the tray 22 and deposited on the tablet The film on the upper surface of the portion 23 also has a certain distance in the vertical direction, that is, the two films are not joined together but are broken; Condition 2, in both the tray 22 and the tableting portion 231, at least A smooth transition is achieved at the junction of the suspended area and the conforming area on the higher hardness. The so-called smooth transition includes the case where the suspended area and the bonding area are in the same horizontal plane (ie, the angle of the joint is 180 degrees), and also includes the case where the two are not in the same horizontal plane and the corners are rounded.
進一步需要指出的是，為防止托盤22被壓片部231損壞，可以使第一懸空區2311的寬度大於第一豎直間距，其中，第一懸空區2311的寬度指的是在製程位置時該第一懸空區2311在第二貼合區2212所在平面的正投影的寬度；並且第一豎直間距指的是下述兩個距離之和，即，第一懸 空區2311的內側邊沿到第一貼合區2312所在平面之間的垂直距離和與製程位置時第二懸空區2211中的與第一懸空區2311的內側邊沿相對應的位置到第二貼合區2212所在平面之間的垂直距離二者之和。 It should be further noted that, in order to prevent the tray 22 from being damaged by the pressing portion 231, the width of the first floating area 2311 may be greater than the first vertical spacing, wherein the width of the first floating area 2311 refers to the processing position. The width of the orthographic projection of the first suspended area 2311 at the plane of the second bonding area 2212; and the first vertical spacing refers to the sum of the following two distances, that is, the first hanging The vertical distance between the inner edge of the empty area 2311 to the plane of the first bonding area 2312 and the position corresponding to the inner edge of the first floating area 2311 in the second floating area 2211 at the process position to the second fit The sum of the vertical distances between the planes of the regions 2212.
作為另一種技術方案，本發明實施例還提供一種反應腔室，第7圖為被加工工件位於製程位置時本發明實施例提供的反應腔室的剖視圖。第8圖為被加工工件位於裝卸位置時本發明實施例提供的反應腔室的剖視圖。請一併參閱第7圖和第8圖，在反應腔室30內的頂部設置有靶材31；在反應腔室30內，且位於靶材31的下方設置有承載裝置，該承載裝置採用了本發明實施例提供的上述承載裝置。 As another technical solution, an embodiment of the present invention further provides a reaction chamber, and FIG. 7 is a cross-sectional view of the reaction chamber provided by the embodiment of the present invention when the workpiece to be processed is located at a process position. Figure 8 is a cross-sectional view of the reaction chamber provided by the embodiment of the present invention when the workpiece to be processed is in the loading and unloading position. Referring to FIG. 7 and FIG. 8 together, a target 31 is disposed at the top of the reaction chamber 30; and a carrying device is disposed in the reaction chamber 30 and below the target 31. The above carrying device provided by the embodiment of the invention.
在本實施例中，反應腔室30還包括基座升降機構33，基座升降機構33用於驅動基座21作升降運動，以使置於其上的托盤22上的被加工工件上升至製程位置(例如第7圖中托盤22上表面所在位置)或下降至裝卸位置(例如第8圖中托盤22上表面所在位置)。而且，在反應腔室30的腔室側壁內側設置有環形內襯32，環形內襯32的下端向內彎曲，並延伸至壓環23的底部，用以在基座升降機構33驅動基座21下降而使被加工工件離開製程位置時支撐壓環23。 In the present embodiment, the reaction chamber 30 further includes a base lifting mechanism 33 for driving the base 21 for lifting movement to raise the workpiece to be processed on the tray 22 placed thereon to the process. The position (for example, the position of the upper surface of the tray 22 in Fig. 7) is lowered to the loading and unloading position (for example, the position of the upper surface of the tray 22 in Fig. 8). Moreover, an annular inner liner 32 is disposed inside the side wall of the chamber of the reaction chamber 30, and the lower end of the annular inner liner 32 is bent inwardly and extends to the bottom of the pressure ring 23 for driving the base 21 at the base lifting mechanism 33. The pressure is lowered to support the pressure ring 23 when the workpiece is moved away from the process position.
在裝載承載有被加工工件的托盤22時，基座升降機構33驅動基座21下降，以使被加工工件離開製程位置，如第8圖所示，壓環23由環形內襯32的下端支撐，此時機械手等傳輸裝置可將托盤22傳輸至基座21的上表面上，從而完成托盤22的裝載。 When loading the tray 22 carrying the workpiece to be processed, the base lifting mechanism 33 drives the base 21 to descend to move the workpiece away from the process position. As shown in Fig. 8, the pressure ring 23 is supported by the lower end of the annular liner 32. At this time, the transport device such as a robot can transport the tray 22 to the upper surface of the base 21, thereby completing the loading of the tray 22.
在完成托盤22的裝載之後，基座升降機構33驅動基座21上升，以使被加工工件位於製程位置時，如第7圖所示，壓環23被托盤22上表 面托起，並脫離環形內襯的下端，此時壓環23借助自身重力壓住托盤22上表面的邊緣區域，從而實現將托盤22固定在基座21上。 After the loading of the tray 22 is completed, the base lifting mechanism 33 drives the base 21 to rise so that the workpiece to be processed is in the process position, as shown in Fig. 7, the pressure ring 23 is placed on the tray 22 The tray is lifted and released from the lower end of the annular liner. At this time, the pressure ring 23 presses the edge region of the upper surface of the tray 22 by its own gravity, thereby fixing the tray 22 to the base 21.
本發明實施例提供的反應腔室，其通過採用本發明實施例提供的上述承載裝置，不僅可以提高產品品質及良率，而且還可以降低裝置的使用成本。 The reaction chamber provided by the embodiment of the invention can not only improve product quality and yield, but also reduce the use cost of the device by using the above-mentioned carrying device provided by the embodiment of the invention.
作為另一種技術方案，本發明實施例還提供一種半導體加工裝置，其包括反應腔室，該反應腔室採用了本發明實施例提供的上述反應腔室。 As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus including a reaction chamber using the above reaction chamber provided by the embodiment of the present invention.
本發明實施例提供的半導體加工裝置，其通過採用本發明實施例提供的上述反應腔室，不僅可以提高產品品質及良率，而且還可以降低裝置的使用成本。 The semiconductor processing apparatus provided by the embodiment of the invention can not only improve product quality and yield, but also reduce the use cost of the device by using the above reaction chamber provided by the embodiment of the invention.
可以理解的是，以上實施方式僅僅是為了說明本發明的原理而採用的示例性實施方式，然而本發明並不局限於此。對於本領域內的普通技術人員而言，在不脫離本發明的精神和實質的情況下，可以做出各種變型和改進，這些變型和改進也視為本發明的保護範圍。 It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.
21‧‧‧基座 21‧‧‧Base
22‧‧‧托盤 22‧‧‧Tray
23‧‧‧壓環 23‧‧‧ Pressure ring
221‧‧‧凹槽 221‧‧‧ Groove
231‧‧‧壓片部 231‧‧‧Pressing Department
2211、2311‧‧‧懸空區 2211, 2311‧‧‧ vacant area
2212、2312‧‧‧貼合區 2212, 2312‧‧ ‧ compliant area
H‧‧‧深度 H‧‧‧ Depth
I‧‧‧區域 I‧‧‧ area
L‧‧‧寬度 L‧‧‧Width
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| CN107164738B (en) * | 2016-03-08 | 2020-01-03 | 北京北方华创微电子装备有限公司 | Reaction chamber |
| CN107304473B (en) * | 2016-04-20 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN108796467B (en) * | 2017-05-03 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Bearing device, reaction chamber and semiconductor processing equipment |
| CN109256357B (en) * | 2017-07-13 | 2020-06-19 | 北京北方华创微电子装备有限公司 | High temperature electrostatic chuck |
| CN113235072A (en) * | 2021-04-13 | 2021-08-10 | 拓荆科技股份有限公司 | Tray capable of being used for conveying mechanical arm |
| CN113270360B (en) * | 2021-05-10 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Process chamber, wafer, compression ring transmission method and semiconductor process equipment |
| CN113818076B (en) * | 2021-11-19 | 2022-03-15 | 华芯半导体研究院(北京)有限公司 | Bearing device and vapor phase epitaxy equipment |
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| TW452838B (en) * | 1999-06-04 | 2001-09-01 | Applied Materials Inc | Tapered shadow clamp ring and method to provide improved edge exclusion |
| TW200503145A (en) * | 2003-05-13 | 2005-01-16 | Agere Systems Inc | Wafer pedestal cover |
| TW200506082A (en) * | 2003-07-24 | 2005-02-16 | Applied Materials Inc | Shutter disk and blade for physical vapor deposition chamber |
| TW200525680A (en) * | 2004-01-27 | 2005-08-01 | Macronix Int Co Ltd | Physical vapor deposition process and apparatus thereof |
| CN101447446A (en) * | 2007-11-28 | 2009-06-03 | 恩益禧电子股份有限公司 | Clamp ring for wafer and method of manufacturing semiconductor apparatus |
| CN103187348A (en) * | 2011-12-31 | 2013-07-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer fixed device, semiconductor device and wafer fixed method |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN105088167B (en) | 2018-01-09 |
| WO2015176528A1 (en) | 2015-11-26 |
| CN105088167A (en) | 2015-11-25 |
| TW201545266A (en) | 2015-12-01 |
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