CN107164738B - Reaction chamber - Google Patents

Reaction chamber Download PDF

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Publication number
CN107164738B
CN107164738B CN201610130096.2A CN201610130096A CN107164738B CN 107164738 B CN107164738 B CN 107164738B CN 201610130096 A CN201610130096 A CN 201610130096A CN 107164738 B CN107164738 B CN 107164738B
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China
Prior art keywords
base
reaction chamber
wafer
flange
shielding piece
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CN201610130096.2A
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Chinese (zh)
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CN107164738A (en
Inventor
蒋磊
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention discloses a reaction chamber, which comprises a base for bearing a wafer, a pressure ring for fixing the wafer on the base, an upper shielding piece and a lower shielding piece, wherein the upper shielding piece and the lower shielding piece are used for surrounding at least part of a chamber wall; the base can be lifted, when the base is lowered to a low position, the press ring is contacted with the lower shielding piece, and when the base is lifted to a high position, the press ring is jacked up from the lower shielding piece so as to be contacted with the outer edge of the wafer; the reaction chamber further comprises an insulating piece, and the insulating piece is located between the pressure ring and the lower shielding piece so that the lower shielding piece is insulated from the pressure ring. The insulating piece of the reaction chamber is positioned between the pressure ring and the lower shielding piece so as to insulate the lower shielding piece from the pressure ring, thereby avoiding the phenomenon of sparking when the pressure ring is contacted with a wafer; under the process condition of large radio frequency voltage, even if the distance between the pressure ring and the lower shielding piece is short, the phenomenon of sparking between the pressure ring and the wafer can not occur.

Description

Reaction chamber
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a reaction chamber.
Background
The Physical Vapor Deposition (PVD) technique is the most widely used thin film manufacturing technique in the semiconductor industry, and refers to a Physical method for vaporizing the surface of a material source into gaseous atoms, molecules or partially ionizing the gaseous atoms into ions, and depositing a thin film with a specific function on the surface of a substrate by using low-pressure gas.
At present, an electrostatic chuck (ESC) is mainly adopted to support a silicon wafer in the PVD technology, and the PVD technology is different from an integrated circuit copper interconnection technology in that the thickness of a deposited film in a through silicon via is large, and the electrostatic chuck cannot perform electrostatic adsorption on the wafer due to overlarge film stress; and the deposition of the silicon through hole film mostly occurs in the subsequent packaging process, the wafer is generally required to be supported by bonding glass after being thinned, and the electrostatic chuck can not carry out electrostatic adsorption on the glass substrate. Therefore, in the through silicon via process, a pressure ring is required to fix the silicon wafer.
As shown in fig. 1, a reaction chamber in the prior art includes a chamber body 1, the reaction chamber is a vacuum reaction chamber, a wafer 2 is placed on a liftable base 3, an upper shield 4 and a lower shield 5 are used to surround and form a process sub-chamber, the upper shield 4 and the lower shield 5 are connected to the chamber body 1 through an adapter flange 6, and a press ring 7 is placed on the wafer 2. After the process is finished, the base 3 is lowered to the low position, the pressing ring 7 is in contact with the lower shielding piece 5, during the process, the base 3 is raised to the high position, the wafer 2 is placed on the base 3, and the pressing ring 7 is placed on the wafer 2 and leaves the lower shielding piece 5. At this time, the base 3, the wafer 2 and the pressure ring 7 are in contact with each other and at the same potential, and the potential is a high potential; the upper shield 4, the lower shield 5, the adapter flange 6 and the chamber body 1 are connected and are in a grounding state.
As shown in fig. 2, the pressing ring 7 is pressed on the wafer 2, six pressing claws are uniformly distributed on the pressing ring 7, during the process, after the base 3 is lifted to a high position, the pressing claws are expected to be uniformly pressed on the edge of the wafer 2 as far as possible, and errors are accumulated in the process of frequently jacking up the pressing ring 7 by the base 3, so that the position of the pressing ring 7 is changed, the position of the pressing ring 7 is often deviated, and the pressing claws cannot be uniformly pressed on the edge of the wafer 2, so that the wafer 2 is broken or the wafer 2 is clamped in the pressing claws of the pressing ring 7.
As shown in fig. 1, when the press ring 7 contacts the lower shield 5, since the press ring 7 is at the same potential as the wafer 2 and the susceptor 3, and the lower shield 5 is in a grounded state, the wafer 2 contacts the press ring 7; under the process condition that the radio frequency voltage is large, if the pressing ring 7 is too close to the lower shield 5, the situation that the position where the pressing ring 7 is in contact with the wafer 2 is ignited can also occur.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a reaction chamber aiming at the defects in the prior art, so that the phenomenon of sparking when a pressure ring is in contact with a wafer is avoided; under the process condition of large radio frequency voltage, even if the distance between the pressure ring body and the lower shielding piece is short, the phenomenon of sparking between the pressure ring body and the wafer can not occur.
The technical scheme adopted for solving the technical problem is to provide a reaction chamber, which comprises a base for bearing a wafer, a pressure ring for fixing the wafer on the base, and an upper shielding piece and a lower shielding piece for surrounding at least part of the chamber wall; the base can be lifted, when the base is lowered to a low position, the press ring is contacted with the lower shielding piece, and when the base is lifted to a high position, the press ring is jacked up from the lower shielding piece so as to be contacted with the outer edge of the wafer; the reaction chamber further comprises an insulating piece, and the insulating piece is located between the pressure ring and the lower shielding piece, so that the lower shielding piece is insulated from the pressure ring.
Preferably, the inner side of the lower shielding part is provided with a vertical upward flange, the insulating part is fixedly connected with the pressing ring, a vertical downward groove is formed in the bottom of the insulating part, and the groove is used for accommodating the flange. The flange of the inner side of the lower shielding piece is the flanging part of the lower shielding piece.
Preferably, the thickness of the bottom of the groove is 3mm to 10mm, and the thickness of the side wall of the groove is 3mm to 10 mm.
Preferably, the depth of the groove is greater than the height difference between the high position and the low position of the base.
Preferably, the height difference of the pedestal between the high position and the low position is 2-5 mm.
Preferably, the difference between the width of the groove and the thickness of the flange is 0.5 to 1 mm.
Preferably, when the base is lowered to the lowered position, the bottom of the groove contacts the top end of the flange.
Preferably, when the base is raised to the raised position, the bottom of the recess is not in contact with the top of the flange.
Preferably, the pressing ring comprises at least three pressing claws arranged at the inner edge of the pressing ring, the pressing claws are uniformly distributed along the circumferential direction of the pressing ring, and when the base is lifted to a high position, the pressing claws are in contact with the outer edge of the wafer.
Preferably, the inner side of the lower shielding piece is provided with a vertical upward flange, the bottom of the pressing ring is provided with a vertical downward groove, the groove is used for accommodating the flange, and the insulating piece is positioned on the inner wall of the groove and/or the outer wall of the flange.
The insulating piece of the reaction chamber is positioned between the pressure ring and the lower shielding piece so as to insulate the lower shielding piece from the pressure ring, thereby avoiding the phenomenon of sparking when the pressure ring is contacted with a wafer; under the process condition of large radio frequency voltage, even if the distance between the pressure ring and the lower shielding piece is short, the phenomenon of sparking between the pressure ring and the wafer can not occur.
Drawings
FIG. 1 is a schematic diagram of a reaction chamber in the prior art;
FIG. 2 is a top view of a prior art pressure ring;
FIG. 3 is a schematic structural view of a reaction chamber in an embodiment of the present invention;
FIG. 4 is a schematic structural view of a reaction chamber in an embodiment of the present invention;
FIG. 5 is a schematic structural view of a reaction chamber in an embodiment of the present invention.
In the figure: 1-a chamber body; 2-a wafer; 3-a base; 4-an upper shield; 5-a lower shield; 6-adapter flange; 7-pressing a ring; 8-a pressure ring body; 9-a flange; 10-an insulator; 11-grooves of the insulator; 12-a support portion; 13-grooves of the support; 14-pressing claw.
Detailed Description
In order to make the technical solutions of the present invention better understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Examples
As shown in fig. 3, the present embodiment provides a reaction chamber comprising a base 3 for carrying a wafer 2, a clamping ring 7 for fixing the wafer 2 on the base 3, an upper shield 4 and a lower shield 5 for enclosing at least part of the chamber wall; the base 3 can be lifted, when the base 3 is lowered to a low position, the press ring 7 is in contact with the lower shielding piece 5, and when the base 3 is lifted to a high position, the press ring 7 is jacked up from the lower shielding piece 5, so that the press ring 7 is in contact with the outer edge of the wafer 2; the reaction chamber further comprises an insulating piece 10, wherein the insulating piece 10 is positioned between the pressing ring 7 and the lower shielding piece 5, so that the lower shielding piece 5 is insulated from the pressing ring 7.
In the embodiment, the insulating part 10 of the reaction chamber is positioned between the pressure ring 7 and the lower shielding part 5, so that the lower shielding part 5 is insulated from the pressure ring 7, and the phenomenon of sparking when the pressure ring 7 is contacted with the wafer 2 is avoided; under the process condition of large radio frequency voltage, even if the pressing ring 7 is close to the lower shielding piece 5, the phenomenon of sparking between the pressing ring 7 and the wafer 2 can not occur.
As shown in fig. 3, it is preferable that the inner side of the lower shield 5 is provided with a vertically upward flange 9, the insulator 10 is fixedly connected with the press ring 7, the bottom of the insulator 10 is provided with a vertically downward groove 11 of the insulator, and the groove 11 of the insulator is used for accommodating the flange 9. The flange 9 is a flange of the lower shield 5. Specifically, insulating part 10 set up in the bottom of clamping ring 7, insulating part 10 with clamping ring 7 passes through screw fixed connection, and insulating part 10 is on-conductive, and the recess 11 and the flange 9 radial clearance of insulating part are very close.
Preferably, the thickness of the bottom of the groove 11 of the insulating member is 3mm to 10mm, and the thickness of the sidewall of the groove 11 of the insulating member is 3mm to 10 mm.
Specifically, the reaction chamber in this embodiment includes a chamber body 1, the reaction chamber is a vacuum reaction chamber, the wafer 2 is placed on the susceptor 3, the upper shield 4 and the lower shield 5 are used for surrounding and forming the process sub-chamber, and the upper shield 4 and the lower shield 5 are connected to the reaction chamber body 1 through the adapter flange 6. After the process is finished, the base 3 is lowered to the low position, the pressing ring 7 is in contact with the lower shielding piece 5, during the process, the base 3 is lifted to the high position, and the pressing ring 7 falls on the wafer 2 and leaves the lower shielding piece 5. At this time, the base 3, the wafer 2 and the pressure ring 7 are in contact with each other and at the same potential, and the potential is a high potential; the lower shield 5, the upper shield 4, the adapter flange 6 and the chamber body 1 are connected and are in a grounding state. Because the insulating piece 10 is positioned between the press ring 7 and the lower shielding piece 5, the lower shielding piece 5 is insulated from the press ring 7, and the phenomenon of sparking when the press ring 7 is in contact with the wafer 2 is avoided; under the process condition of large radio frequency voltage, even if the pressing ring 7 is close to the lower shielding piece 5, the phenomenon of sparking between the pressing ring 7 and the wafer 2 can not occur.
Preferably, the difference between the width of the groove 11 of the insulating member and the thickness of the flange 9 is 0.5 to 1 mm.
Preferably, the depth of the recess 11 of the insulating member is greater than the difference in height between the upper and lower positions of the base 3. Thus, when the base 3 moves between the high position and the low position, the flange 9 is still in the groove 11 of the insulating part, so that in the process that the wafer 2 jacks up the pressing ring 7 frequently along with the base 3, the position of the insulating part 10 only changes within a small range, the position of the pressing ring 7 is hardly changed, the insulating part 10 plays a role in positioning the pressing ring 7, and the phenomenon that the wafer 2 is broken or the wafer 2 is clamped in the pressing ring 7 is avoided.
Preferably, the height difference between the high position and the low position of the base 3 is 2-5 mm.
Preferably, the bottom of the recess 11 of the insulator is in contact with the top end of the flange 9.
Preferably, the bottom of the recess 11 of the insulator is not in contact with the top of the flange 9 when the base 3 is raised to the raised position.
Preferably, the pressure ring 7 comprises at least three pressure claws 14 arranged at its inner edge, the pressure claws 14 being in contact with the outer edge of the wafer 2 when the susceptor 3 is raised to the high position.
Preferably, the pressing claws 14 are evenly distributed along the circumferential direction of the pressing ring 7.
Preferably, the insulating member 10 is made of a high temperature resistant non-metallic material.
Preferably, the material of the insulating member 10 is ceramic or quartz. This makes the insulator 10 resistant to high temperatures and corrosion.
Preferably, the inner side of the lower shielding part 5 is provided with a vertically upward flange 9, the bottom of the pressing ring 7 is provided with a vertically downward groove, the groove is used for accommodating the flange 9, and the insulating part 10 is positioned on the inner wall of the groove and/or the outer wall of the flange.
As shown in fig. 4, the pressure ring 7 includes a pressure ring body 8 and a support portion 12 disposed at the bottom of the pressure ring body 8 for supporting the pressure ring body, a groove 13 of the support portion is disposed at the bottom of the support portion 12, the groove 13 of the support portion is used for accommodating the flange 9, and the insulating member 10 is disposed on an inner wall of the groove 13 of the support portion.
As shown in fig. 4, the insulating member 10 preferably has a groove 11 formed along an inner wall of the groove 13 of the support part, the groove 11 being adapted to the inner wall of the groove 13 of the support part, and the depth of the groove 11 is greater than the height difference between the wafer 2 located at the high position and the wafer 2 located at the low position. Thus, when the wafer 2 moves between the high position and the low position, the flange 9 is still in the groove 11 of the insulating part, so that in the process that the wafer 2 jacks up the pressing ring 7 frequently along with the base 3, the position of the supporting part 12 only changes within a small range, the position of the pressing ring 7 is hardly changed, the positioning effect on the pressing ring 7 is achieved, and the phenomenon that the wafer 2 is broken or the wafer 2 is clamped in the pressing ring 7 is avoided.
Preferably, the flange 9 is in contact with the insulator 10. This facilitates a better positioning of the pressure ring 7.
As shown in fig. 5, the insulating member 10 is provided on the outer wall of the flange 9.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (9)

1. A reaction chamber comprises a base for bearing a wafer, a press ring for fixing the wafer on the base, an upper shield and a lower shield for surrounding at least part of the chamber wall; the base can be lifted, when the base is lowered to a low position, the press ring is contacted with the lower shielding piece, and when the base is lifted to a high position, the press ring is jacked up from the lower shielding piece so as to be contacted with the outer edge of the wafer; the method is characterized in that: the reaction chamber further comprises an insulating piece, and the insulating piece is located between the pressure ring and the lower shielding piece so as to insulate the lower shielding piece from the pressure ring; wherein,
the inboard of lower shield is equipped with vertical ascending flange, the insulator with clamping ring fixed connection, the bottom of insulator is equipped with vertical decurrent recess, the recess is used for holding the flange.
2. The reaction chamber of claim 1, wherein: the thickness of the bottom of the groove is 3 mm-10 mm, and the thickness of the side wall of the groove is 3 mm-10 mm.
3. The reaction chamber of claim 1, wherein: the depth of the groove is larger than the height difference between the high position and the low position of the base.
4. The reaction chamber of claim 3, wherein: the height difference of the base between the high position and the low position is 2-5 mm.
5. The reaction chamber of claim 1, wherein: the difference between the width of the groove and the thickness of the flange is 0.5-1 mm.
6. The reaction chamber of claim 1, wherein: when the base is lowered to the lowered position, the bottom of the groove contacts the top end of the flange.
7. The reaction chamber of claim 1, wherein: when the base is raised to the high position, the bottom of the groove is not in contact with the top end of the flange.
8. The reaction chamber of claim 1, wherein: the clamping ring comprises at least three pressing claws arranged at the inner edge of the clamping ring, the pressing claws are evenly distributed along the circumferential direction of the clamping ring, and when the base rises to a high position, the pressing claws are in contact with the outer edge of the wafer.
9. The reaction chamber of claim 1, wherein: the inboard of lower shield is equipped with vertical ascending flange, the bottom of clamping ring is equipped with vertical decurrent recess, the recess is used for holding the flange, the insulating part is located the inner wall of recess and/or the outer wall of flange.
CN201610130096.2A 2016-03-08 2016-03-08 Reaction chamber Active CN107164738B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610130096.2A CN107164738B (en) 2016-03-08 2016-03-08 Reaction chamber

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Application Number Priority Date Filing Date Title
CN201610130096.2A CN107164738B (en) 2016-03-08 2016-03-08 Reaction chamber

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CN107164738B true CN107164738B (en) 2020-01-03

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057235A (en) * 1997-09-15 2000-05-02 Micron Technology, Inc. Method for reducing surface charge on semiconducter wafers to prevent arcing during plasma deposition
CN105088167A (en) * 2014-05-20 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 Bearing device, reaction chamber and semiconductor machining equipment
CN105097401A (en) * 2014-05-13 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 Reaction chamber and semiconductor processing equipment

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8133362B2 (en) * 2010-02-26 2012-03-13 Fujifilm Corporation Physical vapor deposition with multi-point clamp

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057235A (en) * 1997-09-15 2000-05-02 Micron Technology, Inc. Method for reducing surface charge on semiconducter wafers to prevent arcing during plasma deposition
CN105097401A (en) * 2014-05-13 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 Reaction chamber and semiconductor processing equipment
CN105088167A (en) * 2014-05-20 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 Bearing device, reaction chamber and semiconductor machining equipment

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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No.

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