CN104733367B - Lift pin assembly and substrate processing apparatus having the same - Google Patents
Lift pin assembly and substrate processing apparatus having the same Download PDFInfo
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- CN104733367B CN104733367B CN201410797742.1A CN201410797742A CN104733367B CN 104733367 B CN104733367 B CN 104733367B CN 201410797742 A CN201410797742 A CN 201410797742A CN 104733367 B CN104733367 B CN 104733367B
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- substrate support
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- ejector pin
- substrate
- lift
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Abstract
The present application relates to an ejector pin assembly and a substrate processing apparatus having the same. An ejector pin assembly and a substrate processing apparatus are provided. The ejector pin assembly includes: a first mold pin, at least one portion of which supports a bottom surface of a substrate, the first mold pin being raisable; and a second lift pin configured to guide the first lift pin, the second lift pin being raised by a substrate support.
Description
Technical Field
The present invention relates to an ejector pin assembly, and more particularly, to an ejector pin assembly capable of preventing an ejector pin from being damaged and a substrate processing apparatus having the same.
Background
In general, a process for manufacturing a semiconductor device or a liquid crystal display device includes: a thin film deposition process for depositing a thin film formed of a dielectric material on a wafer or a glass substrate; a photolithography process for exposing selected regions of the thin film by using a photosensitive material; an etching process that removes the thin film within selected regions, thereby forming a desired pattern; and a cleaning process for removing the residue. Here, the above-described process must be repeatedly performed. Also, each of the processes may be performed within a reaction chamber, wherein an optimal environment is formed to perform the corresponding process.
A substrate support for supporting a substrate and a gas injection unit for injecting a process gas may be disposed to face each other within the reaction chamber. Here, a plurality of through holes vertically pass through the substrate support. An ejector pin is coupled to each of the through holes. That is, the lift pins are inserted from the underside of the substrate support. The head is disposed on an upper end of the ejector pin and is supported by a hook-shaped protrusion disposed on a top surface of the substrate support. The lift pins may be used to load and unload substrates from the substrate support.
However, when the substrate support is lowered, the substrate support may be further lowered by a predetermined distance after the lower portions of the lift pins contact the bottom surface of the reaction chamber. Here, the ejector pin may be inclined, and thus damaged by an excessive force occurring when the ejector pin contacts the through-hole. When the lift pins are damaged, it can be difficult to properly support the substrate. As a result, the plasma may be unstable in the case of plasma processing equipment. In addition, when the ejector pins are damaged, the operation of the equipment must be stopped for replacing the damaged ejector pins. Therefore, productivity may be lowered, and the substrate seated on the lift pins may be damaged or broken. Also, when the substrate is damaged, other components of the substrate processing apparatus may be sequentially damaged by the plasma.
To reduce the damage to the ejector pins, the durability must be improved. As a result, the structure in the ejector pin guide is fixed within the through hole of the substrate support, and it has been proposed that the ejector pin is raised along the inner side of the ejector pin guide. This structure is disclosed in korean patent registration No. 10-1218570. Also, it is a structure in which the contact area between the ejector pin guide and the ejector pin is minimized or the frictional force between the ejector pin guide and the ejector pin is reduced by using a direct friction reducing member (e.g., a bearing).
Disclosure of Invention
The present invention provides an ejector pin assembly capable of preventing an ejector pin from being damaged and a substrate processing apparatus using the same.
The present invention also provides an ejector pin assembly surrounding and protecting at least one of ejector pins protruding downward from a substrate support to prevent the ejector pins from being damaged, and a substrate processing apparatus having the ejector pin assembly.
According to an exemplary embodiment, an ejector pin assembly includes: a first mold pin, at least one portion of which supports a bottom surface of a substrate, the first mold pin being raisable; and a second lift pin configured to guide the first lift pin, the second lift pin being raised by a substrate support.
Wherein the second lift pin guides the raised section of the first lift pin may be greater than a thickness of the substrate support.
According to another exemplary embodiment, an ejector pin assembly includes: a first mold pin, at least one portion of which supports a bottom surface of a substrate, the first mold pin being raisable; and a second lift pin configured to receive a portion of the first lift pin when the first lift pin is raised, the second lift pin being raised relative to a substrate support.
Wherein the second lift pin guides the raised section of the first lift pin may be greater than a thickness of the substrate support.
The first lift pin may first protrude from a top surface of the substrate support when compared to the second lift pin.
The first lift pin and the second lift pin may sequentially protrude from a top surface of the substrate support.
The raising of the first lift pin relative to the substrate support and the lowering of the second lift pin relative to the substrate support may be performed simultaneously.
The lowering of the first lift pin relative to the substrate support and the raising of the second lift pin relative to the substrate support may be performed simultaneously.
The ejector pin assembly may further include at least one first lubricating unit disposed between an outer surface of the first ejector pin and an inner surface of the second ejector pin.
The lift pin assembly may further include at least one second lubrication unit disposed between the second lift pin and the through hole of the substrate support.
The ejector pin assembly may further include a contact member disposed on a lower portion of the first ejector pin and having a length greater than a diameter of the first ejector pin.
The ejector pin assembly may further include a contact member disposed on a lower portion of the second ejector pin and having a width greater than a width of a body of the second ejector pin.
At least one portion of the second ejector pin may be formed of a conductive material or an insulating material.
According to yet another exemplary embodiment, an ejector pin assembly includes: a substrate support; a first lift pin configured to support a substrate seated on the substrate support, the first lift pin being elevatable relative to the substrate support; a first mold pin guide configured to guide the raising of the first mold pin, the first mold pin guide being raisable relative to the substrate support.
The lift pin assembly may further include a second lift pin guide configured to guide the elevation of the first lift pin guide, the second lift pin guide disposed between the substrate support and the first lift pin.
Wherein the first mold pin guide guides the raised section of the first mold pin may be greater than a thickness of the substrate support.
The first mold pin may first protrude from a top surface of the substrate support when compared to the first mold pin guide.
The first mold pin and the first mold pin guide may sequentially protrude from a top surface of the substrate support.
The raising of the first mold pin with respect to the substrate support and the lowering of the first mold pin guide with respect to the substrate support may be performed simultaneously.
The lowering of the first mold pin with respect to the substrate support and the raising of the first mold pin guide with respect to the substrate support may be performed simultaneously.
The raising of the first lift pin guide relative to the substrate support and the lowering of the substrate support may be performed simultaneously.
According to yet another exemplary embodiment, a substrate processing apparatus includes: a reaction chamber; a substrate support disposed within the reaction chamber to support a substrate, the substrate support having a plurality of through holes; and a plurality of lift pin assemblies passing through the through holes of the substrate support to support portions of the substrate, wherein each of the lift pin assemblies includes: a first mold pin having at least one portion supporting a bottom surface of the substrate, the first mold pin being raisable; and a second lift pin configured to guide the lifting of the first lift pin, the second lift pin being liftable through each of the through holes.
According to still another exemplary embodiment, a substrate processing apparatus includes: a reaction chamber; a substrate support disposed within the reaction chamber to support a substrate, the substrate support having a plurality of through holes; and a plurality of lift pin assemblies passing through the through holes of the substrate support to support portions of the substrate, wherein each of the lift pin assemblies includes: a first mold pin having at least one portion supporting a bottom surface of the substrate, the first mold pin being raisable; and a second lift pin configured to receive a portion of the first lift pin when the first lift pin is raised, the second lift pin being raised relative to the substrate support.
According to even yet another exemplary embodiment, a method for separating a substrate from a substrate support on which the substrate is seated comprises: preparing a reaction chamber; preparing a substrate support disposed within the reaction chamber and having a plurality of through-holes; preparing a plurality of ejector pin assemblies through the through holes of the substrate support to support portions of the substrate; allowing the substrate support and the plurality of lift pin assemblies to descend; allowing the first lift pin of each of the plurality of lift pin assemblies to contact an inner wall of the reaction chamber; separating at least a portion of the substrate from the substrate support by the first mold pin; and allowing a second ejector pin of each of the plurality of ejector pin assemblies to contact the inner wall of the reaction chamber, wherein the ejector pin assembly includes: the first mold pin, at least one portion of which supports a bottom surface of the substrate, is raisable; and the second lift pin configured to guide the raising of the first lift pin, the second lift pin being raisable relative to the substrate support.
According to even yet another exemplary embodiment, a method for separating a substrate from a substrate support on which the substrate is seated comprises: preparing a reaction chamber; preparing a substrate support disposed within the reaction chamber and having a plurality of through-holes; preparing a plurality of ejector pin assemblies through the through holes of the substrate support to support portions of the substrate; allowing the substrate support and the plurality of lift pin assemblies to descend; allowing the first lift pin of each of the plurality of lift pin assemblies to contact an inner wall of the reaction chamber; separating at least a portion of the substrate from the substrate support by the first mold pin; and allowing a second ejector pin of each of the plurality of ejector pin assemblies to contact the inner wall of the reaction chamber, wherein the ejector pin assembly includes: the first mold pin, at least one portion of which supports a bottom surface of the substrate, is raisable; and the second lift pin configured to receive a portion of the first lift pin when the first lift pin is raised, the second lift pin being raised relative to the substrate support.
Drawings
Exemplary embodiments may be understood in more detail from the following description taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a cross-sectional view of a substrate processing apparatus according to an exemplary embodiment;
FIG. 2 is a partial cross-sectional view illustrating a coupling state between an ejector pin assembly and a substrate support according to an exemplary embodiment;
FIG. 3 is a cross-sectional view of an ejector pin assembly according to an exemplary embodiment;
FIGS. 4-7 are cross-sectional views for explaining the operation of an ejector pin assembly according to an exemplary embodiment; and
fig. 8-11 are cross-sectional views of an ejector pin assembly according to another exemplary embodiment.
Detailed Description
Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Fig. 1 is a cross-sectional view of a substrate processing apparatus according to an exemplary embodiment, fig. 2 is a partial cross-sectional view illustrating a coupling state between an ejector pin assembly and a substrate support according to an exemplary embodiment, and fig. 3 is a cross-sectional view of an ejector pin assembly according to an exemplary embodiment.
Referring to fig. 1, a substrate processing apparatus according to an exemplary embodiment may include: a reaction chamber 100 having a predetermined reaction space; a substrate support 200 disposed in one side of the reaction chamber 100 to support the substrate 10; lift pins 300 for seating the substrate 10 on the substrate support 200 or separating the substrate 10 from the substrate support 200; a gas injection unit 400 disposed in the other side of the reaction chamber 100 facing the substrate support 200 to inject a process gas; a power supply unit 500 supplying power for generating plasma within the reaction chamber 100; and a gas supply unit 600 supplying a process gas into the reaction chamber 100. Also, an exhaust unit 700 for exhausting the inside of the reaction chamber 100 at a predetermined pressure may be further provided.
The reaction chamber 100 may have a cylindrical shape with a predetermined space. The reaction chamber 100 may have various shapes according to the shape of the substrate, for example, a hexahedral shape. Moreover, the reaction chamber 100 may include: a body 100a including a substantially square-shaped plane and a sidewall extending upward from the plane and having a predetermined reaction space; and a cover 100b having a substantially square shape and disposed on the body 100a to seal the reaction chamber 100. The substrate support 200 and the gas injection unit 400 may be disposed within the reaction chamber 100 to face each other. Also, the reaction chamber 100 may have a substrate inlet 110 in the first region, and the substrate 10 is loaded or unloaded through the substrate inlet 110. Also, a gas supply hole 120 connected to a gas supply unit 600 that supplies a process gas into the reaction chamber 100 is defined in a second region of the reaction chamber 100. Also, an exhaust hole 130 may be defined in the third region of the reaction chamber 100 to adjust the internal pressure of the reaction chamber 100, and an exhaust unit 700 may be connected to the exhaust hole 130. For example, the substrate inlet 110 may be defined in a central region of one side surface of the reaction chamber 100 and have a size sufficient to allow the substrate 10 to enter therethrough. The gas supply hole 120 may pass through a predetermined region of the cover 100b, and the gas exhaust hole 130 may pass through a side surface of the reaction chamber 100 at a position lower than the substrate support 200.
The substrate support 200 may be disposed within the reaction chamber 100, and the substrate 10 loaded into the reaction chamber 100 may be seated on the substrate support 200. The substrate support 200 may be disposed at a position facing the gas injection unit 400. For example, the substrate support 200 may be disposed in an inner lower side of the reaction chamber 100, and the gas injection unit 400 may be disposed in an inner upper side of the reaction chamber 100. Here, the substrate 10 may include a silicon substrate for manufacturing a semiconductor. Alternatively, the substrate 10 may comprise a glass substrate used in the manufacture of flat panel displays. Also, the substrate support 200 may include an electrostatic chuck to attract and hold the substrate 10 so as to seat and support the substrate 10 by using an electrostatic force. Alternatively, the substrate support 200 may support the substrate 10 by vacuum adsorption or mechanical force. Also, the substrate support 200 may have a shape corresponding to that of the substrate 10, for example, a circular or square shape. Also, the substrate support 200 may have a size larger than that of the substrate 10. A substrate lifter 210 for lifting the substrate support 200 may be disposed on a lower portion of the substrate support 200. The substrate lift 210 may be provided to support at least one region, for example, a central region, of the substrate support 200. When the substrate 10 is seated on the substrate support 200, the substrate support 200 may move to be close to the gas injection unit 400. Also, a heater (not shown) may be provided in the substrate support 200. The heater may generate heat having a predetermined temperature to heat the substrate 10 so that the thin film deposition process is easily performed on the substrate 10. In addition, a cooling water supply channel (not shown) may be provided in the substrate support 200 to supply cooling water, thereby reducing the temperature of the substrate 10. Also, a plurality of through holes 220 through which a plurality of ejector pin assemblies 300 pass may be defined in the substrate support 200. Also, a hook protrusion 230 supporting the plurality of ejector pin assemblies is disposed above the through-hole 220. The substrate support 200 may be made ofA material having excellent thermal conductivity. For example, the substrate support 200 may be made of silicon carbide (SiC), graphite coated with SiC, silicon nitride (Si)3N4) Aluminum nitride (AlN), and opaque quartz.
A plurality of lift pin assemblies 300 may be disposed within the plurality of through holes of the substrate support 200 to seat a substrate on the substrate support 200 or separate a substrate from the substrate support 200. That is, at least one portion of each of the lift pin assemblies 300 may protrude from the top surface of the substrate support to support the substrate 10 loaded through the substrate inlet 110 and separate the substrate 10 seated on the substrate support 200 from the substrate support 200. To this end, the ejector pin assembly 300 may be disposed within the through-hole 220 of the substrate support 200 during the process. On the other hand, when the process is started or completed, the ejector pin assembly 300 may protrude upward as the substrate support 200 descends. Also, as illustrated in FIG. 2, an ejector pin assembly 300 according to an exemplary embodiment includes: a first mold pin 310 at least one portion of which contacts the substrate 10; and a second liftable lift pin 320 inserted into the through-hole 220 of the substrate support 200 to contact an inner surface of the through-hole 220 and to surround the first lift pin 310 to guide the lifting of the first lift pin 310. The ejector pin assembly 300 will be described in detail below.
The gas injection unit 400 may be disposed in an inner upper side of the reaction chamber 100 to inject a process gas onto the substrate 10. The gas injection unit 400 may include a showerhead type injection unit and an injection type injection unit. In the current embodiment, the showerhead type injection unit will be described as a gas injection unit 400. The showerhead type gas injection unit 400 may have a predetermined space. Also, the showerhead type gas injection unit 400 may have: an upper portion connected to the gas supply unit 600; and a lower portion in which a plurality of injection holes 410 for injecting process gas onto the substrate 10 are defined. The gas injection unit 400 may have a shape corresponding to the shape of the substrate 10, for example, a substantially circular or square shape. Also, a distribution plate (not shown) for uniformly distributing the process gas supplied from the gas supply unit 600 may be further provided in the gas injection unit 400. The distribution plate may be disposed adjacent to a gas inflow unit connected to the process gas supply unit 600 to introduce the process gas therethrough. The distribution plate may have a predetermined plate shape. That is, the distribution plate may be disposed to be spaced apart from the top surface of the gas injection unit 400 by a predetermined distance. Also, the distribution plate may have a plurality of through holes. Accordingly, the process gas supplied from the gas supply unit 600 may be uniformly distributed within the gas injection unit 400 due to the provision of the distribution plate. Accordingly, the process gas may be uniformly injected downward through the injection holes 410. Also, the gas injection unit 400 may be formed of a conductive material such as aluminum. Here, the gas injection unit 400 may be disposed to be spaced apart from the sidewall of the reaction chamber 100 and the cover 100b by a predetermined distance. Also, an insulator 420 may be disposed between the gas injection unit 400 and the reaction chamber 100. When the gas injection unit 400 is formed of a conductive material, the gas injection unit 400 may serve as an upper electrode receiving power from the power supply unit 500.
The power supply unit 500 may supply power for exciting the process gas supplied into the reaction chamber 100 to plasmize the process gas. That is, the power supply unit 500 may pass through the reaction chamber 100 and then be connected to the gas injection unit 400 to supply high frequency power for generating plasma. The power supply unit 500 may include a high frequency power source and a matching box. For example, the high frequency power source may generate high frequency power at approximately 13.56MHz, and the matcher may detect the impedance of the reaction chamber 100 to generate an impedance imaginary component having an opposite phase to the real component of the impedance, thereby supplying maximum power into the reaction chamber such that the imaginary component is the same as a pure resistance that is the real component and thus produces the optimal plasma. The power supply unit 500 may apply high frequency power into the gas injection unit 400, and the substrate support 200 may be grounded to allow the process gas within the reaction chamber 100 to be plasmatized.
The gas supply unit 600 may include a gas supply source 610 for supplying each of a plurality of process gases and a gas supply pipe 620 for supplying the process gases from the gas supply source 610 into the reaction chamber 100. The process gas may comprise a filmDeposition gases and etching gases. And, for example, H2Inert gases such as Ar and the like may be supplied together with the process gas. A valve and a mass flow meter for controlling the supply of the process gas may be disposed between the gas supply source 610 and the gas supply pipe 620.
The exhaust unit 700 may include an exhaust 710 and an exhaust pipe 720 connected to the exhaust hole 130 of the reaction chamber 100. A vacuum pump such as a turbo-molecular pump may be used as the exhaust 710. Thus, the interior of the reaction chamber 100 may be formed in a reduced pressure atmosphere, for example, the reaction chamber 100 may be configured to pump a pressure of about 0.1 mtorr or less. A plurality of exhaust holes may be defined in the corresponding side surface of the reaction chamber 100 below the substrate support 200 and the bottom surface of the reaction chamber 100. Accordingly, a plurality of exhaust pipes 720 may be provided, and then the plurality of exhaust pipes 720 may be respectively connected to the plurality of exhaust holes 130. Also, in order to reduce the time taken to exhaust the process gas, a plurality of exhaust pipes 720 and an exhaust device 710 may be further provided.
The ejector pin assembly according to an exemplary embodiment will be described in detail with reference to fig. 2 and 3.
The ejector pin assembly 300 according to an exemplary embodiment may include: a first mold pin, at least one portion of which supports the substrate 10; and a second lift pin 320 receiving the first lift pin 310 therein and having an outer portion contacting a side surface of the through-hole of the substrate support 200. That is, the second lift pins 320 may be inserted into the through holes 220 of the substrate support 200, and the first lift pins 310 may be inserted into the second lift pins 320. Also, the first lift pin 310 may have a length greater than that of the second lift pin 320.
The first mold pins 310 may be used to seat the substrate 10 on the top surface of the substrate support 200 when the substrate 10 is loaded into the reaction chamber 100 or to separate the substrate 10 from the top surface of the substrate support 200 when the substrate 10 is unloaded from the reaction chamber 100. The first lift pin 310 may include a first head 312 having a substantially cylindrical shape and a rod 314 protruding downward from the first head 312 by a predetermined length. Here, stem 314 may have a diameter that is less than the diameter of first head 312, and protrusion 316 may be disposed on the connection between first head 312 and stem 314. That is, first head 312, which has a diameter greater than the diameter of stem 314, may have a bottom surface that protrudes from stem 314 to form protrusion 316. The protrusion 316 of the first mold pin 310 corresponds to the hook protrusion 326 of the second pin 320. That is, the protrusion 316 of the first lift pin 310 may be supported by the hook protrusion 326 of the second ejector pin 320 to prevent the first lift pin 310 from being separated from the second ejector pin 320.
The second lift pins 320 may be inserted into the through holes 220 of the substrate support 400. Also, the second lift pin 320 may have a substantially cylindrical shape such that the first lift pin 310 is inserted therein. The second ejector pin 320 may include a second head 322 disposed on an upper portion thereof and a body 324 disposed below the second head and having a predetermined length. Also, a through portion may pass vertically through a central portion of each of the second head 322 and the body 324 in a longitudinal direction, and the first molding pin 310 may be inserted into the through portion. The first head 312 of the first lift pin 310 is received into the second head 322. That is, second head 322 may have an inner diameter that corresponds to an outer diameter of first head 312 such that first head 312 is received therein. Here, the second head 322 of the second ejector pin 320 may have an inner diameter greater than an outer diameter of the first head 312 to prevent the second head 322 from rubbing against a side surface of the first head 312. Also, the rod 314 of the first lift pin 310 may be received into the body 324 to allow the rod 314 to move vertically. For example, the pass-through portion may be provided such that the body has an inner diameter that is greater than the diameter of the stem 314. Here, the body 324 may have a vertical length that is less than the length of the rod 314 and greater than the thickness of the substrate support 200. That is, the second head 322 of the second ejector pin 320 may have the same vertical length as the first head 312 of the first lift pin 310, and the body 324 of the second ejector pin 320 may have a length smaller than that of the rod 314 of the first lift pin 310. Accordingly, when the first head 312 is supported by the second head 322 of the second ejector pin 320, the rod 314 may protrude downward from the body 324. The second ejector pin 320 has a hook-shaped protrusion 326 between a lower portion of the second head 322 and an upper portion of the body 324. That is, the through portion of the second head 322 may have an inner diameter greater than that of the through portion of the body 324. Accordingly, an upper portion of the body 324 may be exposed to an underside of the through portion of the second head 322 to form the hook protrusion 326. The protrusion 316 of the first lift pin 310 may be supported by the hook protrusion 326 of the second lift pin 320. Also, when the first head 312 of the first lift pin 310 is supported by the hook protrusion 326 of the second lift pin 320, the surfaces of the first head 312 and the second head 322 may be maintained at the same height. The second head 322 of the second ejector pin 320 may have a width greater than that of the body 324 to protrude outward from the body 324. The protrusion 328 may be disposed between an outer side of the second head 322 and an outer side of the body 324. The protrusion 328 may be supported by a hook protrusion 230 disposed on an upper portion of the through portion 220 of the substrate support 400. That is, the substrate support 400 may have the hook-shaped protrusion 230 with a width equal to or greater than that of the second head of the second ejector pin 320 to support the second head 322 of the second ejector pin 320. Also, the lubrication unit 330, which is point-contacted to the first lift pin 310, may be disposed inside the body 324 (i.e., on an inner wall of the through portion) to minimize a frictional force generated when the first lift pin 310 is lifted. Here, the lubrication unit 330 may include a ball. However, the lubrication unit 330 may not be limited to the ball. Alternatively, the lubricating unit 330 may have a cylindrical shape that is perpendicularly disposed with respect to the central axis of the first mold pin 310. Also, a seating hole in which the lubricating unit 330 (i.e., a ball) is seated may be defined in an inner wall of the second lift pin 320. Here, the ball may be inserted such that a portion of the ball protrudes outside the seating hole (i.e., toward the second lift pin 320) to point-contact the first lift pin 310. Also, three or more balls may be symmetrically disposed on the same plane. For example, four balls may be disposed on the same plane. Here, four balls may be disposed at the same distance and protrude at the same height toward the first mold lifting pin 310.
Since at least one portion of each of the first and second ejector pins 310 and 320 is exposed to the process gas, the first and second ejector pins 310 and 320 may be formed of a ceramic or insulating material having corrosion resistance. That is, the first pin 310 and the second pin 320 may be formed of the same material. However, the first lift pin 310 and the second lift pin 320 may be formed of different materials from each other. Accordingly, the first and second ejector pins 310 and 320 may have different mechanical strengths from each other. That is, the second ejector pin 320 may have a mechanical strength greater or less than that of the first ejector pin 310. Also, at least one portion of the second lift pins 320 may be formed of the same material as the substrate support 200 to minimize thermal imbalance with the substrate support 200 in which the heater is built. For example, the body 324 of the second ejector pin 320 may be formed of the same material as the substrate support 200. Also, the second lift pins 320 may be formed of a material that does not cause abnormal discharge between the substrate support 200 having a relatively high potential and the lower portion of the reaction chamber 100 having a relatively low potential. That is, the second ejector pin 320 may be formed of an insulating material. Alternatively, the second lift pins 320 may be used as a path for discharging the charges non-uniformly concentrated into the substrate support 200, that is, a ground line. For this, the second ejector pin 320 may be formed of a conductive material.
Fig. 4 to 7 are cross-sectional views for explaining the operation of the ejector pin assembly according to an exemplary embodiment.
Referring to fig. 4, when the substrate support 200 is raised, the protrusion 328 of the second lift pin 320 may be supported by the hook protrusion 230 of the substrate support 200, and the protrusion 316 of the first lift pin 310 may be hooked on the hook protrusion 326 of the second lift pin 320 to be raised. That is, when the substrate support 200 is raised, all of the first and second lift pins 310 and 320 may be raised.
Referring to fig. 5, when the substrate support 200 descends, a lower portion of the first mold pin 310 may contact the bottom surface 100c of the reaction chamber 100. That is, since the rod 314 of the first lift pin 310 has a length greater than that of the body 324 of the second lift pin 320, the bottom surface of the rod 314 of the first lift pin 310 may first contact the bottom surface 100c of the reaction chamber 100 when the substrate support 200 descends. Here, since the body 324 of the second lift pin 320 surrounds the rod 312 of the first lift pin 310 after the first lift pin 310 contacts the bottom surface 100c of the reaction chamber 100, the rod 312 may not be inclined and may also not contact the inside of the through-hole 220 to prevent the first lift pin 310 from being damaged.
Referring to fig. 6, when the substrate support 200 is continuously lowered after the lower portion of the first lift pin 310 contacts the bottom surface 100c of the reaction chamber 100, the lower portion of the body 324 of the second lift pin 320 may contact the bottom surface 100c of the reaction chamber 100, and the first head 312 of the first lift pin 310 may protrude upward from the surface of the substrate support 200. That is, the first lift pin 310 may first protrude from the top surface of the substrate support 200 when compared to the second lift pin 320. Here, since the second lift pin 320 is continuously lowered, the raising of the first lift pin 310 with respect to the substrate support 200 and the lowering of the second lift pin 320 with respect to the substrate support 200 may be simultaneously performed. Also, since the second lift pin 320 contacts the bottom surface 100c of the reaction chamber 100 while surrounding the first lift pin 310, the first lift pin 310 may not be inclined.
Referring to fig. 7, when the substrate support 200 is continuously lowered, a portion of the second lift pins 320 (i.e., a portion of the head 322 and the body 324) may protrude upward from the substrate support 200. That is, the first lift pin 310 and the second lift pin 320 may sequentially protrude from the top surface of the substrate support 200.
As described above, the ejector pin assembly according to an exemplary embodiment may include the second ejector pin 320, the second ejector pin 320 surrounding the outside of the first ejector pin 310 supporting the substrate 10. Also, since the second lift pins 320 are vertically raised together with the first lift pins 310, even if the first lift pins 310 contact the bottom surface 100c of the reaction chamber 100, the first lift pins 310 may not be inclined and may not contact the inner side surfaces of the through-holes of the substrate support 200. Therefore, it may prevent the first mold lifting pin 310 from being inclined and thus damaged by pressure applied thereto. The case where the substrate S is separated from the substrate support 200 after the substrate S is supported by the first mold lifting pin 310 is described in the current embodiment. However, to support the loaded substrate S, the second lift pins 320 and the first mold-lifting pins 310 may be sequentially moved upward after the substrate S is supported by the first mold-lifting pins 310 protruding from the substrate support 200, and then the substrate support 200 is moved upward. Here, the raising of the second lift pin 320 with respect to the substrate support 200 and the lowering of the first lift pin 310 with respect to the substrate support 200 may be performed simultaneously.
The ejector pin assembly 300 according to the exemplary embodiment may be modified in various ways. Various embodiments are still described with reference to fig. 8 through 11.
Fig. 8 is a partial cross-sectional view illustrating a coupling state between an ejector pin assembly and a substrate support according to another exemplary embodiment. The lubrication unit 355 may be further disposed inside the through hole 220 of the substrate support 200. That is, a seating hole (not shown) may be defined inside the through hole 220 of the substrate support 200, and the lubricating unit 335 having a spherical shape may be provided such that at least one portion of the lubricating unit 335 is inserted into the seating hole. Since the lubricating unit 335 is provided, the second ejector pin 320 may not contact the inner surface of the through-hole 220 to ascend or descend more smoothly.
Also, in the ejector pin assembly 300 according to still another exemplary embodiment, as illustrated in fig. 9, the contact member 340 may be disposed on a lower portion of the first ejector pin 310 (i.e., a lower portion of the rod 314). The contact member 340 may have a width greater than a width of the rod 314 of the first mold pin 310. For example, the contact member 340 may have a width equal to or greater than a width of the body 324 of the second ejector pin 320. The contact member 340 may be formed of materials different from those of the first head 312 and the stem 314 of the first molding pin 310. That is, at least one portion of the contact member 340 may be formed of a polymer material to absorb an impact force and prevent particles from occurring when the contact member 340 contacts the bottom surface 100c of the reaction chamber 100. The contact member 340 may contact the bottom surface 100c of the reaction chamber 100 when the substrate support 200 descends. Here, since the contact member 340 is provided, the center of gravity of the first molding pin 310 may be lowered. Therefore, when the first mold lifting pin 310 moves downward, the contact part 340 may guide the first mold lifting pin 310 such that the first mold lifting pin 310 moves vertically.
Also, in the ejector pin assembly 300 according to still another exemplary embodiment, as illustrated in fig. 10, the contact member 350 may be disposed on a lower portion of the second ejector pin 320 (i.e., a lower portion of the body 324). Here, the contact member 350 may have a width greater than that of the body 324 of the second ejector pin 320. The contact member 350 may be formed of materials different from those of the second head 322 and the body 324. For example, at least one portion of the contact member 350 may be formed of a polymer material to absorb an impact force and prevent particles from occurring when the contact member 350 contacts the bottom surface 100c of the reaction chamber 100. In the ejector pin assembly 300, when the substrate support 200 is lowered, the lower portion of the first ejector pin 310 may contact the bottom surface 100c of the reaction chamber 100 first, and then the contact member 350 disposed on the lower portion of the second ejector pin 320 may contact the bottom surface 100c of the reaction chamber 100. Here, since the contact member 350 is provided, the center of gravity of the second ejector pin 320 may be lowered. Accordingly, the second ejector pin 320 may be moved downward without shaking. That is, the second ejector pin 320 may be moved downward in a vertical state.
As illustrated in fig. 11, the substrate support 200 may include a protrusion 250 protruding downward from a lower portion of the substrate support 200 by a predetermined height. Here, the through-hole may be defined in the protrusion 250 at the same position as the through-hole 220 of the substrate support 200. The lubricating unit 337 may be further disposed between the protrusion 250 and the second ejector pin 320 within the through hole. That is, a seating hole (not shown) may be defined inside the through hole of the protrusion 250, and the lubricating unit 337 having a spherical shape may be provided such that at least one portion of the lubricating unit 335 is inserted into the seating hole. Since the lubricating unit 337 is provided, the second ejector pin 320 may not contact the inner surface of the protrusion 250 to ascend or descend more smoothly.
In the ejector pin assembly according to various embodiments, the second ejector pin may be provided to surround an outer side of the first ejector pin of which at least one portion supports the substrate, and the first ejector pin may be elevated by the second ejector pin. Also, the second lift pins may be elevated through the through holes of the substrate support. When the first lift pin contacts the bottom surface of the reaction chamber, the first lift pin may not be inclined and may not contact the inner surface of the through-hole of the substrate support since the second lift pin surrounds the first lift pin.
Accordingly, damage of the lift pins can be prevented to prevent the substrate and components of the substrate processing apparatus from being damaged. Accordingly, the replacement cycle of the ejector pin can be extended to improve productivity.
As described above, the technical idea of the present invention has been specifically described with respect to the above embodiments, but it should be noted that the foregoing embodiments are provided only for illustration and not to limit the present invention. Various embodiments may be provided to allow those skilled in the art to understand the scope of the present invention, but the present invention is not limited thereto.
Claims (34)
1. An ejector pin assembly, comprising:
a first mold pin, at least one portion of which supports a bottom surface of a substrate, the first mold pin being raisable; and
a second lift pin to guide the first lift pin, the second lift pin being raised by a substrate support,
wherein the first mold pin is installed to contact a bottom surface of a reaction chamber in which a substrate support is provided by a descent of the substrate support,
the second lift pins are inserted into through-holes of the substrate support to contact the bottom surface of the reaction chamber and protrude upward from the substrate support by the lowering of the substrate support, thereby being installed to be raised while being in contact with the through-holes, and
the second lift pins support the bottom surface of the substrate in conjunction with the first lift pins when the substrate support is raised.
2. The ejector pin assembly of claim 1, wherein the elevated section in which the second ejector pin guides the first ejector pin is greater than the thickness of the substrate support.
3. The ejector pin assembly of claim 1 or 2, wherein the first ejector pin protrudes first from a top surface of the substrate support when compared to the second ejector pin.
4. The ejector pin assembly of claim 1 or 2, wherein the first and second ejector pins protrude sequentially from a top surface of the substrate support.
5. The lift pin assembly of claim 1 or 2, wherein raising of the first lift pin relative to the substrate support and lowering of the second lift pin relative to the substrate support are performed simultaneously.
6. The lift pin assembly of claim 1 or 2, wherein the lowering of the first lift pin relative to the substrate support and the raising of the second lift pin relative to the substrate support are performed simultaneously.
7. The ejector pin assembly of claim 1 or 2, further comprising at least one first lubrication unit disposed between an outer surface of the first ejector pin and an inner surface of the second ejector pin.
8. The ejector pin assembly of claim 7, further comprising at least one second lubrication unit disposed between the second ejector pin and a through-hole of the substrate support.
9. The ejector pin assembly of claim 1 or 2, further comprising a contact member disposed on a lower portion of the first ejector pin and having a length greater than a diameter of the first ejector pin.
10. The ejector pin assembly of claim 1 or 2, further comprising a contact member disposed on a lower portion of the second ejector pin and having a width greater than a width of a body of the second ejector pin.
11. The ejector pin assembly of claim 1 or 2, wherein at least one portion of the second ejector pin is formed of an electrically conductive material or an insulating material.
12. An ejector pin assembly, comprising:
a first mold pin, at least one portion of which supports a bottom surface of a substrate, the first mold pin being raisable; and
a second lift pin configured to receive a portion of the first lift pin when the first lift pin is raised, the second lift pin being raised relative to a substrate support,
wherein the first mold pin is installed to contact a bottom surface of a reaction chamber in which a substrate support is provided by a descent of the substrate support,
the second lift pins are inserted into through-holes of the substrate support to contact the bottom surface of the reaction chamber and protrude upward from the substrate support by the lowering of the substrate support, thereby being installed to be raised while being in contact with the through-holes, and
the second lift pins support the bottom surface of the substrate in conjunction with the first lift pins when the substrate support is raised.
13. The ejector pin assembly of claim 12, wherein the elevated section in which the second ejector pin guides the first ejector pin is greater than the thickness of the substrate support.
14. The lift pin assembly of claim 12, wherein the first lift pin protrudes first from a top surface of the substrate support when compared to the second lift pin.
15. The ejector pin assembly of claim 12, wherein the first ejector pin and the second ejector pin protrude sequentially from a top surface of the substrate support.
16. The lift pin assembly of claim 12, wherein raising of the first lift pin relative to the substrate support and lowering of the second lift pin relative to the substrate support are performed simultaneously.
17. The lift pin assembly of claim 12, wherein the lowering of the first lift pin relative to the substrate support and the raising of the second lift pin relative to the substrate support are performed simultaneously.
18. The ejector pin assembly of claim 12, further comprising at least one first lubrication unit disposed between an outer surface of the first ejector pin and an inner surface of the second ejector pin.
19. The ejector pin assembly of claim 18, further comprising at least one second lubrication unit disposed between the second ejector pin and a through-hole of the substrate support.
20. The ejector pin assembly of claim 12, further comprising a contact member disposed on a lower portion of the first ejector pin and having a length greater than a diameter of the first ejector pin.
21. The ejector pin assembly of claim 12, further comprising a contact member disposed on a lower portion of the second ejector pin and having a width greater than a width of a body of the second ejector pin.
22. The ejector pin assembly of claim 12, wherein at least one portion of the second ejector pin is formed of a conductive material or an insulating material.
23. An ejector pin assembly, comprising:
a substrate support;
a first mold pin configured to support a substrate seated on the substrate support, the first mold pin being elevatable relative to the substrate support;
a first mold pin guide configured to guide elevation of the first mold pin, the first mold pin guide being elevatable relative to the substrate support,
wherein the first mold pin is installed to contact a bottom surface of a reaction chamber in which a substrate support is provided by a descent of the substrate support,
the first mold pin guide is inserted into a through-hole of the substrate support to contact the bottom surface of the reaction chamber and protrudes upward from the substrate support by the descent of the substrate support, thereby being installed to be raised while being in contact with the through-hole, and
the first mold pin guide supports a bottom surface of the substrate in conjunction with the first mold pin when the substrate support is raised.
24. The ejector pin assembly of claim 23, further comprising a raised second ejector pin guide configured to guide the first ejector pin guide, the second ejector pin guide disposed between the substrate support and first ejector pin guide.
25. The ejector pin assembly of claim 23, wherein the elevated section in which the first ejector pin guide guides the first ejector pin is greater than a thickness of the substrate support.
26. The ejector pin assembly of claim 23, wherein the first ejector pin protrudes first from a top surface of the substrate support when compared to the first ejector pin guide.
27. The ejector pin assembly of claim 23, wherein the first ejector pin and the first ejector pin guide protrude sequentially from a top surface of the substrate support.
28. The lift pin assembly of claim 23, wherein raising of the first lift pin relative to the substrate support and lowering of the first lift pin guide relative to the substrate support are performed simultaneously.
29. The lift pin assembly of claim 23, wherein the lowering of the first lift pin relative to the substrate support and the raising of the first lift pin guide relative to the substrate support are performed simultaneously.
30. The lift pin assembly of claim 23, wherein raising of the first lift pin guide relative to the substrate support and lowering of the substrate support are performed simultaneously.
31. A substrate processing apparatus, comprising:
a reaction chamber;
a substrate support disposed within the reaction chamber to support a substrate, the substrate support having a plurality of through holes; and
a plurality of lift pin assemblies passing through the through holes of the substrate support to support portions of the substrate,
wherein each of the ejector pin assemblies comprises:
a first mold pin having at least one portion supporting a bottom surface of the substrate, the first mold pin being raisable; and
a second ejector pin configured to guide elevation of the first ejector pin, the second ejector pin being elevatable through each of the through holes,
wherein the first mold pin is installed to contact a bottom surface of a reaction chamber in which a substrate support is provided by a descent of the substrate support,
the second lift pins are inserted into through-holes of the substrate support to contact the bottom surface of the reaction chamber and protrude upward from the substrate support by the lowering of the substrate support, thereby being installed to be raised while being in contact with the through-holes, and
the second lift pins support the bottom surface of the substrate in conjunction with the first lift pins when the substrate support is raised.
32. A substrate processing apparatus, comprising:
a reaction chamber;
a substrate support disposed within the reaction chamber to support a substrate, the substrate support having a plurality of through holes; and
a plurality of lift pin assemblies passing through the through holes of the substrate support to support portions of the substrate,
wherein each of the ejector pin assemblies comprises:
a first mold pin having at least one portion supporting a bottom surface of the substrate, the first mold pin being raisable; and
a second ejector pin configured to receive a portion of the first ejector pin when the first ejector pin is raised, the second ejector pin being raisable relative to the substrate support,
wherein the first mold pin is installed to contact a bottom surface of a reaction chamber in which a substrate support is provided by a descent of the substrate support,
the second lift pins are inserted into through-holes of the substrate support to contact the bottom surface of the reaction chamber and protrude upward from the substrate support by the lowering of the substrate support, thereby being installed to be raised while being in contact with the through-holes, and
the second lift pins support the bottom surface of the substrate in conjunction with the first lift pins when the substrate support is raised.
33. A method for separating a substrate from a substrate support on which the substrate sits, the method comprising:
preparing a reaction chamber;
preparing a substrate support disposed within the reaction chamber and having a plurality of through-holes;
preparing a plurality of ejector pin assemblies through the through holes of the substrate support to support portions of the substrate;
allowing the substrate support and the plurality of lift pin assemblies to descend;
allowing the first lift pin of each of the plurality of lift pin assemblies to contact an inner wall of the reaction chamber;
separating at least a portion of the substrate from the substrate support by the first mold pin; and
allowing a second ejector pin of each of the plurality of ejector pin assemblies to contact the inner wall of the reaction chamber,
wherein each of the plurality of ejector pin assemblies comprises:
the first mold pin, at least one portion of which supports a bottom surface of the substrate, is raisable; and
the second lift pin configured to guide elevation of the first lift pin, the second lift pin being elevatable relative to the substrate support,
wherein the first mold pin is installed to contact a bottom surface of a reaction chamber in which a substrate support is provided by a descent of the substrate support,
the second lift pins are inserted into through-holes of the substrate support to contact the bottom surface of the reaction chamber and protrude upward from the substrate support by the lowering of the substrate support, thereby being installed to be raised while being in contact with the through-holes, and
the second lift pins support the bottom surface of the substrate in conjunction with the first lift pins when the substrate support is raised.
34. A method for separating a substrate from a substrate support on which the substrate sits, the method comprising:
preparing a reaction chamber;
preparing a substrate support disposed within the reaction chamber and having a plurality of through-holes;
preparing a plurality of ejector pin assemblies through the through holes of the substrate support to support portions of the substrate;
allowing the substrate support and the plurality of lift pin assemblies to descend;
allowing the first lift pin of each of the plurality of lift pin assemblies to contact an inner wall of the reaction chamber;
separating at least a portion of the substrate from the substrate support by the first mold pin; and
allowing a second ejector pin of each of the plurality of ejector pin assemblies to contact the inner wall of the reaction chamber,
wherein each of the plurality of ejector pin assemblies comprises:
the first mold pin, at least one portion of which supports a bottom surface of the substrate, is raisable; and
the second ejector pin configured to receive a portion of the first ejector pin when the first ejector pin is raised, the second ejector pin being raisable relative to the substrate support,
wherein the first mold pin is installed to contact a bottom surface of a reaction chamber in which a substrate support is provided by a descent of the substrate support,
the second lift pins are inserted into through-holes of the substrate support to contact the bottom surface of the reaction chamber and protrude upward from the substrate support by the lowering of the substrate support, thereby being installed to be raised while being in contact with the through-holes, and
the second lift pins support the bottom surface of the substrate in conjunction with the first lift pins when the substrate support is raised.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2013-0158350 | 2013-12-18 | ||
| KR1020130158350A KR102215641B1 (en) | 2013-12-18 | 2013-12-18 | Lift pin assembly and substrate processing apparatus having the same |
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| CN104733367A CN104733367A (en) | 2015-06-24 |
| CN104733367B true CN104733367B (en) | 2020-08-21 |
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| CN201410797742.1A Active CN104733367B (en) | 2013-12-18 | 2014-12-18 | Lift pin assembly and substrate processing apparatus having the same |
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| KR (1) | KR102215641B1 (en) |
| CN (1) | CN104733367B (en) |
| TW (1) | TWI686885B (en) |
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| WO2019102657A1 (en) * | 2017-11-21 | 2019-05-31 | 株式会社アルバック | Lift pin and vacuum treatment device |
| JP6733966B2 (en) * | 2018-07-09 | 2020-08-05 | Ａｉメカテック株式会社 | Board assembly apparatus and board assembly method |
| KR20230082405A (en) * | 2021-12-01 | 2023-06-08 | 주식회사 유진테크 | Lift pin protection assembly and substrate processing apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941318A (en) * | 2005-09-30 | 2007-04-04 | 东京毅力科创株式会社 | Substrate placing mechanism and substrate processing device |
| KR20100081285A (en) * | 2010-05-28 | 2010-07-14 | 주성엔지니어링(주) | Lift pin assembly |
| WO2011009007A3 (en) * | 2009-07-15 | 2011-07-28 | Applied Materials, Inc. | Improved lift pin guides |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4627392B2 (en) * | 2001-09-26 | 2011-02-09 | 株式会社アルバック | Vacuum processing apparatus and vacuum processing method |
| JP4919971B2 (en) * | 2005-12-28 | 2012-04-18 | シャープ株式会社 | Plasma processing apparatus and display panel substrate manufactured using plasma processing apparatus |
| KR20070071418A (en) * | 2005-12-30 | 2007-07-04 | 주성엔지니어링(주) | Lift pin assembly |
| CN100477147C (en) * | 2006-03-16 | 2009-04-08 | 东京毅力科创株式会社 | Substrate table and substrate processing apparatus |
| KR20080015194A (en) * | 2006-08-14 | 2008-02-19 | 동부일렉트로닉스 주식회사 | Two stage pin structure of wafer stage and wafer loading method |
| JP5141520B2 (en) * | 2008-12-02 | 2013-02-13 | 東京エレクトロン株式会社 | Plasma processing equipment |
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2013
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941318A (en) * | 2005-09-30 | 2007-04-04 | 东京毅力科创株式会社 | Substrate placing mechanism and substrate processing device |
| WO2011009007A3 (en) * | 2009-07-15 | 2011-07-28 | Applied Materials, Inc. | Improved lift pin guides |
| KR20100081285A (en) * | 2010-05-28 | 2010-07-14 | 주성엔지니어링(주) | Lift pin assembly |
Also Published As
| Publication number | Publication date |
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| TWI686885B (en) | 2020-03-01 |
| CN104733367A (en) | 2015-06-24 |
| KR20150071382A (en) | 2015-06-26 |
| TW201528415A (en) | 2015-07-16 |
| KR102215641B1 (en) | 2021-02-16 |
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