CN107164738A - A kind of reaction chamber - Google Patents
A kind of reaction chamber Download PDFInfo
- Publication number
- CN107164738A CN107164738A CN201610130096.2A CN201610130096A CN107164738A CN 107164738 A CN107164738 A CN 107164738A CN 201610130096 A CN201610130096 A CN 201610130096A CN 107164738 A CN107164738 A CN 107164738A
- Authority
- CN
- China
- Prior art keywords
- pressure ring
- pedestal
- reaction chamber
- groove
- shielding part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a kind of reaction chamber, including the pedestal for bearing wafer, for securing the wafer in the pressure ring on pedestal, upper shielding part and lower shielding part for surrounding at least part chamber wall；Pedestal liftable, when pedestal drops to low level, pressure ring is contacted with lower shielding part, when pedestal rises to a high position, by pressure ring from jack-up on lower shielding part, so that pressure ring is contacted with the outer rim of chip；Reaction chamber also includes insulating part, and insulating part is located between pressure ring and lower shielding part, so that lower shielding part insulate with pressure ring.The insulating part of reaction chamber in the present invention is located between pressure ring and lower shielding part, so that lower shielding part insulate with pressure ring, so as to spark phenomenon occur when avoiding pressure ring with contact wafers；Under the larger process conditions of radio-frequency voltage, even if pressure ring and lower shielding part distance are near, will not also occur spark phenomenon between pressure ring and chip.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, and in particular to a kind of reaction chamber.
Background technology
Physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) technology is half
A most widely used class film fabrication techniques in conductor industry, refer to and use physical method by material
Material source surface is gasificated into gaseous atom, molecule or partial ionization into ion, and passes through low pressure
Gas deposits the film with certain specific function in matrix surface.
Current PVD technique is mainly supported using electrostatic chuck (ESC) to silicon chip, with
Unlike integrated circuit copper interconnecting technique, the film thickness of the deposition in silicon hole is larger,
Membrane stress, which crosses conference, causes electrostatic chuck can not carry out Electrostatic Absorption to chip；And silicon
Being appeared in through hole thin film deposition in rear road packaging technology, chip needs after being typically thinned more
Chip is supported using glass is bonded, electrostatic chuck can not equally enter to substrate of glass
Row Electrostatic Absorption.Therefore need to consolidate silicon chip using pressure ring in the technique of silicon hole
It is fixed.
As shown in figure 1, the reaction chamber of prior art one includes chamber body 1, the reaction chamber
Room is vacuum reaction chamber, and chip 2 is positioned on liftable pedestal 3, upper shielding part 4
It is used for lower shielding part 5 around the encirclement sub- chamber of formation process, upper shielding part 4 and lower shielding
Part 5 is connected to chamber body 1 by adapter flange 6, and pressure ring 7 is put off on chip 2.
After technique terminates, pedestal 3 drops to low level, and pressure ring 7 is contacted with lower shielding part 5, work
During skill, pedestal 3 rises to a high position, and chip 2 is positioned on pedestal 3, and pressure ring 7 is put off
In on chip 2, leaving lower shielding part 5.Now, pedestal 3, chip 2 connect with pressure ring 7
Synapsis is in same current potential, and the current potential is high potential；Upper shielding part 4, lower shielding part 5, switching
Flange 6, chamber body 1 are connected, and are in ground state together.
As shown in Fig. 2 pressure ring 7 is pressed on wafer 2, six are uniformly distributed on pressure ring 7
Paw, during technique, pedestal 3, which is risen to after a high position, wishes that paw can be pressed uniformly as far as possible
To the edge of chip 2, due to the frequent jack-up pressure ring 7 of pedestal 3 during produce error tire out
Meter, makes the position of pressure ring 7 change, so often the position of pressure ring 7 is offset,
Paw is caused uniformly to be pressed onto the edge of chip 2 so that fragment or chip 2 occurs in chip 2
It is stuck in the phenomenon in the paw of pressure ring 7.
As shown in figure 1, when pressure ring 7 is contacted with lower shielding part 5, due to pressure ring 7 with
Chip 2 and pedestal 3 are in same current potential, and lower shielding part 5 is in ground state, will
The position sparking contacted in pressure ring 7 with chip 2；In the process conditions that radio-frequency voltage is larger
Under, if pressure ring 7 and chip 2 also occurs apart from too near in pressure ring 7 and lower shielding part 5
The situation of the position sparking of contact.
The content of the invention
The technical problems to be solved by the invention be for present in prior art it is above-mentioned not
There is provided a kind of reaction chamber for foot, it is to avoid spark phenomenon occurs when pressure ring is with contact wafers；
Under the larger process conditions of radio-frequency voltage, even if pressure ring body and lower shielding part distance are near,
Also spark phenomenon will not occur between pressure ring body and chip.
The technical scheme that solution present invention problem is used is to provide a kind of reaction chamber
Room, including the pedestal for bearing wafer, for the chip to be fixed on into the pedestal
On pressure ring, upper shielding part and lower shielding part for surrounding at least part chamber wall；Institute
Pedestal liftable is stated, when the pedestal drops to low level, the pressure ring and the lower screen
Shield is contacted, when the pedestal rises to a high position, by the pressure ring from the lower shielding
Jack-up on part, so that the pressure ring is contacted with the outer rim of the chip；The reaction chamber
Also include insulating part, the insulating part is located between the pressure ring and the lower shielding part,
So that the lower shielding part insulate with the pressure ring.
Preferably, the inner side of the lower shielding part is described provided with flange straight up
Insulating part is fixedly connected with the pressure ring, and the bottom of the insulating part is provided with straight down
Groove, the groove is used to accommodate the flange.Under the flange of the inner side of lower shielding part is
At the flange of shielding part.
Preferably, the thickness of the bottom of the groove is 3mm~10mm, described recessed
The thickness of the side wall of groove is 3mm~10mm.
Preferably, the depth of the groove be more than the pedestal be located at it is high-order with low level it
Between difference in height.
Preferably, the pedestal be located at the difference in height between high-order and low level for 2~
5mm。
Preferably, the difference of the thickness of the width of the groove and the flange is
0.5~1mm.
Preferably, when the pedestal drops to low level, the bottom of the groove and institute
State the tip contact of flange.
Preferably, when the pedestal rises to a high position, the bottom of the groove and institute
The top for stating flange is not contacted.
Preferably, the pressure ring includes at least three paws at the edge that sets within it,
The paw is circumferentially uniformly distributed along the pressure ring, when the pedestal rises to a high position,
The paw is contacted with the outer rim of the chip.
Preferably, the inner side of the lower shielding part is described provided with flange straight up
The bottom of pressure ring is provided with groove straight down, and the groove is used to accommodate the flange,
The insulating part is located at the inwall of the groove and/or the outer wall of the flange.
The insulating part of reaction chamber in the present invention is located at the pressure ring and the lower shielding part
Between, so that the lower shielding part insulate with the pressure ring, so as to avoid pressure ring and crystalline substance
There is spark phenomenon when contacting in piece；Under the larger process conditions of radio-frequency voltage, even if pressure
Ring and lower shielding part distance are near, will not also occur spark phenomenon between pressure ring and chip.
Brief description of the drawings
Fig. 1 is the structural representation of the reaction chamber in background technology；
Fig. 2 is the top view of the pressure ring in background technology；
Fig. 3 is the structural representation of the reaction chamber in the embodiment of the present invention；
Fig. 4 is the structural representation of the reaction chamber in the embodiment of the present invention；
Fig. 5 is the structural representation of the reaction chamber in the embodiment of the present invention.
In figure：1- chamber bodies；2- chips；3- pedestals；The upper shielding parts of 4-；Shielded under 5-
Part；6- adapter flanges；7- pressure rings；8- pressure ring bodies；9- flanges；10- insulating parts；11-
The groove of insulating part；12- supporting parts；The groove of 13- supporting parts；14- paws.
Embodiment
To make those skilled in the art more fully understand technical scheme, tie below
The drawings and specific embodiments are closed to be described in further detail the present invention.
Embodiment
As shown in figure 3, the present embodiment provides a kind of reaction chamber, including for carrying crystalline substance
The pedestal 3 of piece 2, for the pressure ring 7 being fixed on the chip 2 on the pedestal 3,
Upper shielding part 4 and lower shielding part 5 for surrounding at least part chamber wall；The pedestal 3
Liftable, when the pedestal 3 drops to low level, the pressure ring 7 and the lower shielding
Part 5 is contacted, when the pedestal 3 rises to a high position, by the pressure ring 7 under described
Jack-up on shielding part 5, so that the pressure ring 7 is contacted with the outer rim of the chip 2；Institute
Stating reaction chamber also includes insulating part 10, and the insulating part 10 is located at the pressure ring 7 and institute
State between lower shielding part 5, so that the lower shielding part 5 insulate with the pressure ring 7.
Under the insulating part 10 of reaction chamber in the present embodiment is located at the pressure ring 7 and is described
Between shielding part 5, so that the lower shielding part 5 insulate with the pressure ring 7, so as to keep away
Exempt from spark phenomenon occur when pressure ring 7 is contacted with chip 2；In the work that radio-frequency voltage is larger
, also will not be in the He of pressure ring 7 even if pressure ring 7 and lower shielding part 5 are apart near under the conditions of skill
There is spark phenomenon between chip 2.
As shown in Figure 3, it is preferred that the inner side of the lower shielding part 5 provided with it is vertical to
On flange 9, the insulating part 10 is fixedly connected with the pressure ring 7, the insulating part
Groove 11 of 10 bottom provided with insulating part straight down, the groove 11 of the insulating part
For accommodating the flange 9.Flange 9 is at the flange of lower shielding part 5.Specifically, institute
State the bottom that insulating part 10 is arranged at the pressure ring 7, the insulating part 10 and the pressure
Ring 7 is fixedly connected by screw, and insulating part 10 is non-conductive, the groove 11 of insulating part with
The radial clearance of flange 9 is close.
Preferably, the thickness of the bottom of the groove 11 of the insulating part be 3mm~
10mm, the thickness of the side wall of the groove 11 of the insulating part is 3mm~10mm.
Specifically, reaction chamber includes chamber body 1 in the present embodiment, the reaction chamber is
Vacuum reaction chamber, chip 2 is positioned on pedestal 3, upper shielding part 4 and lower shielding part 5
For around the sub- chamber of formation process is surrounded, upper shielding part 4 and lower shielding part 5 to pass through switching
Flange 6 is connected to reaction chamber body 1.After technique terminates, the pedestal 3 drops to low
Position, the pressure ring 7 is contacted with lower shielding part 5, during technique, and the pedestal 3 rises to
A high position, pressure ring 7 is put off on chip 2, leaving the lower shielding part 5.Now, pedestal 3,
Chip 2 is contacted with pressure ring 7 in same current potential, and the current potential is high potential；Lower shielding part 5,
Upper shielding part 4, adapter flange 6, chamber body 1 are connected, and are in ground state together.Cause
It is located at for insulating part 10 between the pressure ring 7 and the lower shielding part 5, so that under described
Shielding part 5 insulate with the pressure ring 7, so that when avoiding pressure ring 7 and being contacted with chip 2
There is spark phenomenon；Under the larger process conditions of radio-frequency voltage, even if pressure ring 7 is with
Shielding part 5 also spark phenomenon will not occur apart near between pressure ring 7 and chip 2.
Preferably, the thickness of the width of the groove 11 of the insulating part and the flange 9
Difference be 0.5~1mm.
Preferably, the depth of the groove 11 of the insulating part is located at more than the pedestal 3
Difference in height between high-order and low level.So, pedestal 3 is moved between high-order and low level
When, flange 9 is still in the groove 11 of insulating part, therefore in chip 2 with pedestal 3
During carrying out frequent jack-up pressure ring 7, the position of insulating part 10 only can be in small model
Interior change is enclosed, the position of such pressure ring 7 also just hardly changes, pass through insulation
Part 10 serves the positioning action for pressure ring 7, it is to avoid chip 2 occur fragment or
Chip 2 is stuck in the phenomenon in pressure ring 7.
Preferably, the pedestal 3 be located at the difference in height between high-order and low level for 2~
5mm。
Preferably, the bottom of the groove 11 of the insulating part and the top of the flange 9
Contact.
Preferably, when the pedestal 3 rises to a high position, the groove of the insulating part
11 bottom is not contacted with the top of the flange 9.
Preferably, the pressure ring 7 includes at least three paws at the edge that sets within it
14, when the pedestal 3 rises to a high position, the paw 14 is outer with the chip 2
Edge is contacted.
Preferably, the paw 14 is uniformly distributed along the pressure ring 7 is circumferential.
Preferably, the material of the insulating part 10 is resistant to elevated temperatures nonmetallic materials.
Preferably, the material of the insulating part 10 is ceramics or quartz.So cause exhausted
The high temperature resistant of edge part 10 and corrosion.
Preferably, the inner side of the lower shielding part 5 is provided with flange 9 straight up,
The bottom of the pressure ring 7 is provided with groove straight down, and the groove is described for accommodating
Flange 9, the insulating part 10 is located at the inwall of the groove and/or the outer wall of the flange.
As shown in figure 4, the pressure ring 7 includes pressure ring body 8 and is arranged at the pressure ring
The bottom of body 8 is used for the supporting part 12 supported, the bottom of the supporting part 12
Portion is provided with the groove 13 of supporting part, and the groove 13 of the supporting part is used to accommodate the flange
9, the insulating part 10 is arranged on the inwall of groove 13 of the supporting part.
As shown in Figure 4, it is preferred that the insulating part 10 is along the recessed of the supporting part
The insulating part that the inwall formation of groove 13 is adapted with the inwall of the groove 13 of the supporting part
Groove 11, the depth of the groove 11 of the insulating part is more than the chip 2 and is located at a high position
It is located at the difference in height between low level with the chip 2.So, chip 2 is high-order and low
When being moved between position, flange 9 is still in the groove 11 of insulating part, therefore in chip 2
During carrying out frequent jack-up pressure ring 7 with pedestal 3, the position of supporting part 12 only can
Change in small scope, the position of such pressure ring 7 also just hardly changes,
Serve the positioning action for pressure ring 7, it is to avoid fragment or chip 2 occurs in chip 2
It is stuck in the phenomenon in pressure ring 7.
Preferably, the flange 9 is contacted with the insulating part 10.So be conducive to pressure
Ring 7 is preferably positioned.
As shown in figure 5, the insulating part 10 is arranged on the outer wall of the flange 9.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present
And the illustrative embodiments used, but the invention is not limited in this.For ability
For those of ordinary skill in domain, the situation of spirit and substance of the present invention is not being departed from
Under, various changes and modifications can be made therein, and these variations and modifications are also considered as the present invention's
Protection domain.
Claims (10)
1. a kind of reaction chamber, including the pedestal for bearing wafer, for by the crystalline substance
Piece is fixed on the pressure ring on the pedestal, the upper shielding for surrounding at least part chamber wall
Part and lower shielding part；The pedestal liftable, when the pedestal drops to low level, institute
Pressure ring is stated to contact with the lower shielding part, will be described when the pedestal rises to a high position
Pressure ring is from jack-up on the lower shielding part, so that the outer rim of the pressure ring and the chip connects
Touch；It is characterized in that：The reaction chamber also includes insulating part, and the insulating part is located at
Between the pressure ring and the lower shielding part, so that the lower shielding part and the pressure ring are exhausted
Edge.
2. reaction chamber according to claim 1, it is characterised in that：The lower screen
The inner side of shield is provided with flange straight up, and the insulating part is fixed with the pressure ring to be connected
Connect, the bottom of the insulating part is provided with groove straight down, and the groove is used to accommodate
The flange.
3. reaction chamber according to claim 2, it is characterised in that：The groove
The thickness of bottom be 3mm~10mm, the thickness of the side wall of the groove for 3mm~
10mm。
4. reaction chamber according to claim 2, it is characterised in that：The groove
Depth be more than the difference in height that the pedestal is located between high-order and low level.
5. reaction chamber according to claim 4, it is characterised in that：The pedestal
Difference in height between high-order and low level is 2~5mm.
6. reaction chamber according to claim 2, it is characterised in that：The groove
Width and the flange thickness difference be 0.5~1mm.
7. reaction chamber according to claim 2, it is characterised in that：When the base
When seat drops to low level, the bottom of the groove and the tip contact of the flange.
8. reaction chamber according to claim 2, it is characterised in that：When the base
When seat rises to a high position, the bottom of the groove is not contacted with the top of the flange.
9. reaction chamber according to claim 1, it is characterised in that：The pressure ring
Including at least three paws at the edge that sets within it, the paw is circumferential along the pressure ring
It is uniformly distributed, when the pedestal rises to a high position, the paw is outer with the chip
Edge is contacted.
10. reaction chamber according to claim 1, it is characterised in that：Under described
The inner side of shielding part provided with flange straight up, the bottom of the pressure ring provided with it is vertical to
Under groove, the groove is used to accommodate the flange, and the insulating part is located at described recessed
The outer wall of the inwall of groove and/or the flange.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610130096.2A CN107164738B (en) | 2016-03-08 | 2016-03-08 | Reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610130096.2A CN107164738B (en) | 2016-03-08 | 2016-03-08 | Reaction chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107164738A true CN107164738A (en) | 2017-09-15 |
| CN107164738B CN107164738B (en) | 2020-01-03 |
Family
ID=59848451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610130096.2A Active CN107164738B (en) | 2016-03-08 | 2016-03-08 | Reaction chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107164738B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6057235A (en) * | 1997-09-15 | 2000-05-02 | Micron Technology, Inc. | Method for reducing surface charge on semiconducter wafers to prevent arcing during plasma deposition |
| JP2011179120A (en) * | 2010-02-26 | 2011-09-15 | Fujifilm Corp | Apparatus and method of physical vapor deposition with multi-point clamp |
| CN105088167A (en) * | 2014-05-20 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing device, reaction chamber and semiconductor machining equipment |
| CN105097401A (en) * | 2014-05-13 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
-
2016
- 2016-03-08 CN CN201610130096.2A patent/CN107164738B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6057235A (en) * | 1997-09-15 | 2000-05-02 | Micron Technology, Inc. | Method for reducing surface charge on semiconducter wafers to prevent arcing during plasma deposition |
| JP2011179120A (en) * | 2010-02-26 | 2011-09-15 | Fujifilm Corp | Apparatus and method of physical vapor deposition with multi-point clamp |
| CN105097401A (en) * | 2014-05-13 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| CN105088167A (en) * | 2014-05-20 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing device, reaction chamber and semiconductor machining equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107164738B (en) | 2020-01-03 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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