CN113270360B - Process chamber, wafer, compression ring transmission method and semiconductor process equipment - Google Patents
Process chamber, wafer, compression ring transmission method and semiconductor process equipment Download PDFInfo
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- CN113270360B CN113270360B CN202110504322.XA CN202110504322A CN113270360B CN 113270360 B CN113270360 B CN 113270360B CN 202110504322 A CN202110504322 A CN 202110504322A CN 113270360 B CN113270360 B CN 113270360B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
Abstract
The invention provides a process chamber and semiconductor process equipment, wherein the process chamber comprises a first supporting piece, a second supporting piece, a first pressure ring and a second pressure ring which are all arranged in a cavity, and the first supporting piece is connected with a lining and used for supporting the first pressure ring; the second supporting piece is arranged below the first supporting piece and used for supporting the second pressure ring; the second supporting piece is provided with an opening opposite to the sheet conveying opening and used for allowing the second pressing ring and the conveying device to pass through when the conveying device is taken out or put in the second pressing ring; the inner diameter of the first pressing ring is larger than that of the second pressing ring, the base can sequentially jack up the second pressing ring and the first pressing ring in the process that the base is lifted to the process position, and the second pressing ring can be superposed on the edge area of the upper surface of the wafer on the base when the base reaches the process position; the first pressure ring can be superposed on an edge region of the upper surface of the second pressure ring. According to the embodiment of the invention, a cavity is not required to be opened, and the pressure ring is not required to be replaced, so that the vacuum recovery process of the cavity can be saved, and the utilization rate of equipment is improved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a process chamber, a wafer transmission method, a pressure ring transmission method and semiconductor process equipment in semiconductor process equipment.
Background
Physical Vapor Deposition (PVD) refers to a process of depositing a metal thin film by a Physical method. In the PVD process, a process gas including an inert gas and a reactive gas is supplied into a chamber, and a direct current or a radio frequency power is applied to a target to excite a plasma and bombard the target, and target particles sputtered by bombardment fall on a wafer surface to form a thin film. However, the target particles are deposited on the wafer surface and also on the chamber wall, and for this reason, a Process Kit (Process Kit) is usually added inside the PVD chamber to protect the inner wall of the chamber.
Specifically, as shown in FIG. 1, the clamping ring 101 of the prior art process kit assembly is configured to press against an edge region of the upper surface of the wafer 103 when the susceptor 102 is in the processing position to enable a thin film deposition process to be performed on the wafer 103. In practical applications, as the number of process wafers in the chamber is accumulated, films are deposited on both the upper surface of the pressure ring 101 and the lower surface of the eave 101a, and a film deposition area is shown by a dotted line in fig. 1, after the films are deposited to a certain thickness, the films deposited on the lower surface of the eave 101a contact the wafer 103, which may cause the wafer 103 and the pressure ring 101 to be adhered together through the films, so that the wafer 103 and the pressure ring 101 cannot be naturally separated when the susceptor 102 descends, which is called wafer sticking. When the wafer is stuck slightly, the wafer is deviated, and when the wafer is stuck slightly, the wafer falls off to cause fragments. For this reason, when the thin film deposited on the pressure ring 101 reaches a certain thickness, the process chamber needs to be opened and the pressure ring 101 needs to be replaced.
However, after the pressure ring is replaced by opening the cavity each time, the process chamber needs to be restored to the vacuum state again, the restoring process generally needs 12 hours or even longer, and in a target life cycle, the pressure ring needs to be replaced by opening the cavity 2-3 times, so that the loss of the utilization rate of equipment is large, and the productivity is affected.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a process chamber, a wafer transmission method, a pressure ring transmission method and semiconductor process equipment in the semiconductor process equipment.
The process chamber comprises a cavity, a lining and a liftable base, wherein the lining and the liftable base are arranged in the cavity, a sheet conveying port for a conveying device to pass through is formed in the side wall of the cavity, the process chamber further comprises a first supporting piece, a second supporting piece, a first pressing ring and a second pressing ring which are all arranged in the cavity, and the first supporting piece is connected with the lining and used for supporting the first pressing ring;
the second supporting piece is arranged below the first supporting piece and used for supporting the second pressing ring; the second support piece is provided with an opening opposite to the sheet conveying opening, and the opening is used for allowing the second pressing ring and the transmission device to pass through when the transmission device is taken out or put in the second pressing ring;
the inner diameter of the first pressing ring is larger than that of the second pressing ring, the base rises to the process position, the base can jack up the second pressing ring and the first pressing ring in sequence, the base reaches when the process position, the second pressing ring can be stacked in the edge area of the upper surface of the wafer on the base, and the first pressing ring can be stacked in the edge area of the upper surface of the second pressing ring.
Optionally, the second supporting member includes two supporting blocks, the two supporting blocks are connected to the first supporting member and are disposed on two sides of the blade conveying opening in a horizontal direction, and the space between the two supporting blocks forms the opening.
Optionally, a step portion lower than the upper surface of the supporting block is formed at the edge of the supporting block close to the inner side of the second press ring, and the step portion is used for supporting the second press ring and limiting the position of the second press ring on the supporting block.
Optionally, the first support comprises a first annular extension part horizontally extending from the lower end of the liner towards the inner side of the liner, and a second annular extension part upwardly extending from the inner circumference of the first annular extension part, wherein,
the supporting block is connected with the first annular extension part;
the upper end of the second annular extension part is used for supporting the first pressing ring.
Optionally, the first pressing ring includes a first annular body, and a lower surface of the first annular body is overlapped on an edge area of an upper surface of the second pressing ring when the base is located at the process position; a first annular flange is formed on the inner circumferential surface of the first annular body, and the lower surface of the first annular flange and the upper surface of the second pressing ring are arranged at intervals;
a first annular groove and a second annular groove surrounding the first annular groove are formed in the upper surface of the second pressure ring, wherein the opening of the first annular groove is opposite to the inner peripheral edge of the first annular flange; the opening of the second annular groove is opposite to the inner periphery of the first annular body, and the radial width of the first annular groove is larger than that of the second annular groove.
Optionally, the second pressure ring includes a second annular body, and a lower surface of the second annular body is overlapped on an edge area of an upper surface of the wafer placed on the susceptor when the susceptor is located at the process position; and a second annular flange is formed on an inner peripheral surface of the second annular body, and a lower surface of the second annular flange is spaced apart from an upper surface of the wafer.
Optionally, the process chamber further includes at least three liftable support columns arranged in the chamber, at least three support columns are arranged around the base at intervals along the circumferential direction of the base, at least three upper end faces of the support columns jointly form a first bearing face for supporting the edge area of the lower surface of the wafer, each support column is provided with a limiting section protruding relative to the upper end face, and at least three upper end faces of the limiting sections on the support columns jointly form a second bearing face for supporting the second pressure ring.
Optionally, the limiting segments on at least three of the supporting pillars form limiting spaces above the first carrying surface, and the size of the opening of each limiting space increases progressively along a direction away from the first carrying surface, so as to calibrate the position of the wafer on the first carrying surface.
Optionally, the side surface of the limiting section facing the base is an inclined surface, or the limiting section is a conical section; wherein the content of the first and second substances,
the included angle between the generatrix of the inclined plane or the conical section and the horizontal plane is more than 60 degrees and less than or equal to 80 degrees.
Optionally, an annular matching portion is arranged at the bottom of the second pressing ring, and the annular matching portion is in sliding fit with the limiting section and used for calibrating the position of the second pressing ring on the second bearing surface.
As another technical solution, an embodiment of the present invention further provides a wafer transfer method, which is applied to the process chamber provided in the embodiment of the present invention, and the wafer transfer method includes the following steps:
s101, controlling the transmission device carrying the wafer to extend into the cavity through the wafer conveying port and move to a first height position above the base at the wafer taking and placing position;
s102, controlling the transmission device to descend to a second height position so that the wafer falls onto the first bearing surfaces of at least three support columns;
s103, controlling the transmission device to move out of the cavity through the wafer conveying port, and then controlling at least three support columns to ascend so that the second bearing surface supports the second pressure ring from the second support piece;
and S104, controlling the base to ascend from the position of the taking and placing piece, and sequentially supporting the wafer, the second pressing ring and the first pressing ring in the ascending process until the wafer reaches the process position.
Optionally, the wafer transmission method further includes the following steps:
s105, controlling the base to descend from the process position to the chip taking and placing position, so that the first pressing ring falls onto the first supporting piece; the second press ring falls onto the second support; the wafer falls onto the first bearing surfaces of at least three support columns;
s106, controlling the transmission device to extend into the cavity through the sheet conveying opening and move to the second height position;
s107, controlling the transmission device to ascend to the first height position and supporting the wafer in the ascending process;
and S108, controlling the conveying device to move out of the process chamber through the sheet conveying port.
As another technical solution, an embodiment of the present invention further provides a pressure ring transmission method, which is applied to the process chamber provided in the embodiment of the present invention, and the pressure ring transmission method includes the following steps:
s201, controlling the transmission device to extend into the cavity through the sheet conveying port and move to a first height position above the base at the sheet taking and placing position;
s202, controlling the transmission device to ascend to a third height position, and supporting the second pressure ring in the ascending process;
s203, controlling the transmission device carrying the second press ring to move out of the cavity through the opening and the sheet passing port successively.
Optionally, the compression ring transmission method further includes the following steps:
s301, controlling the transmission device carrying the second press ring to extend into the cavity through the sheet conveying opening and move to the third height position through the opening;
s302, controlling the transmission device to descend to the first height position so that the second pressing ring falls onto the second support;
s303, controlling the transmission device to move out of the cavity through the film transmission port.
As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, which includes a process chamber, where the process chamber provided in the embodiment of the present invention is adopted.
The invention has the following beneficial effects:
according to the technical scheme of the process chamber, the wafer transmission method and the compression ring transmission method in the semiconductor process equipment, the two compression rings are adopted, the second compression ring is taken out or put in by using the transmission device (such as a mechanical arm) so as to be replaced, a cavity does not need to be opened, the second compression ring does not need to be replaced, the first compression ring does not need to be replaced, and the first compression ring and the second compression ring do not need to be replaced. Therefore, the process of vacuum recovery of the cavity can be saved, the equipment utilization rate can be improved, and the productivity can be improved.
The embodiment of the invention provides semiconductor process equipment, and by adopting the process chamber provided by the embodiment of the invention, cavity opening and pressure ring replacement are not needed, so that the vacuum recovery process of the chamber can be saved, the utilization rate of the equipment can be improved, and the productivity can be improved.
Drawings
FIG. 1 is a partial block diagram of a pressure ring in a prior art assembly;
FIG. 2 is a cross-sectional view of a process chamber provided in accordance with an embodiment of the present invention;
fig. 3 is a partial structural view of the first pressure ring and the second pressure ring adopted in the embodiment of the present invention when the base is in the process position;
FIG. 4 is a block diagram of a second support member used in an embodiment of the present invention;
FIG. 5 is a block diagram of a liner and a first support member used in an embodiment of the present invention;
FIG. 6 is a partial block diagram of a support column used in an embodiment of the present invention;
FIG. 7 is a partial block diagram of a support post used in an embodiment of the present invention to support a second pressure ring;
FIG. 8A is a partial cross-sectional view of a process chamber in a first state according to an embodiment of the invention;
FIG. 8B is a partial cross-sectional view of a process chamber in a second state according to an embodiment of the invention;
FIG. 8C is a partial cross-sectional view of a process chamber in a third state according to an embodiment of the invention;
FIG. 9A is a partial cross-sectional view of a process chamber in a fourth state according to an embodiment of the invention;
FIG. 9B is a partial cross-sectional view of a process chamber in a fifth state in accordance with an embodiment of the present invention;
FIG. 9C is another partial cross-sectional view of a process chamber in a fifth state in accordance with an embodiment of the present invention;
fig. 10 is a flowchart illustrating a wafer transfer method according to an embodiment of the invention;
fig. 11 is a flowchart of a taking-out process of the pressure ring transmission method according to the embodiment of the present invention;
fig. 12 is a flow chart of a putting-in process of the pressure ring transmission method according to the embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the process chamber, the wafer transferring method, the pressure ring transferring method and the semiconductor processing apparatus in the semiconductor processing apparatus according to the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 2, a process chamber according to an embodiment of the present invention is applied to a process chamber of a Physical Vapor Deposition (PVD) apparatus. Taking a process chamber of a PVD apparatus as an example, the process chamber includes a chamber 1, an adaptor 10 is disposed on a top of the chamber 1, a ceramic ring 11 is disposed on a top of the adaptor 10, and a target 12 is disposed on a top of the ceramic ring 11. Wherein, the ceramic ring 11 is used for electrically insulating the target material 12 from the adaptor 10 and the cavity 1; and, be provided with inside lining 2 in the cavity 1, this inside lining 2 encircles along the inner wall of cavity 1 and sets up, and inside lining 2 and adaptor 10 fixed connection.
The process chamber further comprises a liftable base 3 arranged in the cavity 1 and used for bearing the wafer, wherein the base 3 can be lifted to a process position for carrying out the process, or can be lowered to a wafer taking and placing position for taking out or placing the wafer through a transmission device. The conveying device may be, for example, a robot for carrying the wafer in a load-bearing manner, in which case, the conveying device needs to be used in cooperation with at least three support columns 14 capable of being lifted synchronously to achieve the wafer taking and placing. Of course, in practical applications, the conveying device may also take and place the wafer by other methods, such as grabbing, adsorbing, and the like.
Specifically, taking the conveying device as a robot for carrying the wafer by a load-bearing method as an example, in this embodiment, the process chamber further includes at least three support columns 14 disposed in the cavity 1, the at least three support columns 14 are distributed around the susceptor 3 at intervals along the circumferential direction of the susceptor 3, and can be lifted and lowered synchronously, and the way of lifting and lowering synchronously is, for example: a support ring 15 is arranged in the cavity 1 and surrounds the base 3 along the circumferential direction, the inner diameter of the support ring 15 is larger than the outer diameter of the base 3, the support ring is connected with a lifting driving source (not shown in the figure), and the lower ends of at least three support columns 14 are fixedly connected with the support ring 15. Under the driving of the lifting driving source, the support ring 15 drives the at least three support columns 14 thereon to synchronously lift, so that the upper ends of the at least three support columns 14 can be located at a position higher or lower than the upper surface of the base 3; moreover, at least three support columns 14 can lift the wafer placed on the base 3 in the process of ascending so as to separate the wafer from the base 3; during the lowering of the at least three support columns 14, the wafer supported by the at least three support columns 14 may be dropped onto the susceptor 3. Thus, at least three support columns 14 may be used in conjunction with the robot described above to effect the insertion or removal of wafers. In addition, a wafer transferring port 4 for a transmission device to pass through is arranged on the side wall of the chamber 1, and the wafer transferring port 4 is used for enabling a wafer to be transferred into or out of the chamber 1.
The process chamber further comprises a first support member 5, a second support member 6, a first press ring 7 and a second press ring 8 which are all arranged in the chamber 1, wherein as shown in fig. 3, the inner diameter of the first press ring 7 is larger than that of the second press ring 8, so that the first press ring 7 can not shield the falling sputtering material during the deposition process, and the sputtering material can be uniformly deposited on the surface of the wafer 16. In addition, in the process that the base 3 is lifted to the process position shown in fig. 3, the base 3 can sequentially jack up the second press ring 8 and the first press ring 7, and when the base 3 reaches the process position, the second press ring 8 is superposed on the edge area of the upper surface of the wafer 16 on the base 3; the first pressure ring 7 is superposed on the edge region of the upper surface of the second pressure ring 8. At this time, as shown in fig. 8C, the liner 2, the first press ring 7, the second press ring 8 and the susceptor 3 together partition the inside of the chamber 1 to form an upper space 13a and a lower space 13b, so that the sputtered material in the upper space 13a is not directly deposited to the inner wall of the chamber and other components located in the lower space 13b at the time of the process.
A first support 5 is connected to the lining 2 for supporting a first press ring 7 so that it can be separated from a second press ring 8 when the susceptor 3 is lowered from the processing position. The first support 5 may have various structures, for example, as shown in fig. 5, the first support 5 includes a first annular extension 51 horizontally extending from the lower end of the liner 2 toward the inner side of the liner 2, and a second annular extension 52 upwardly extending from the inner circumference of the first annular extension 51, wherein the upper end of the second annular extension 52 is used to support the first press ring 7. Optionally, the first annular extension 51, the second annular extension 52 and the liner 2 are integrally formed.
As shown in fig. 2, the second supporting member 6 is disposed below the first supporting member 5, and is used for supporting the second pressing ring 8; and, this second support 6 is provided with the opening opposite to above-mentioned chip conveying mouth 4, is used for when the transfer device takes out or puts into the second clamping ring 8, for second clamping ring 8 and above-mentioned transfer device to pass through, thus realize taking out and putting into of second clamping ring 8. In addition, the wafer conveying opening 4 can also enable the second pressing ring 8 to pass through, so that when the second pressing ring 8 needs to be replaced, the second pressing ring 8 can be conveyed into or out of the cavity 1 through the conveying device without replacing the cavity.
The process chamber provided by the embodiment of the invention adopts two press rings, and the second press ring 8 is taken out or put in by using a transmission device (such as a manipulator) so as to realize the replacement of the second press ring 8 without opening a cavity to replace the second press ring 8 or replacing the first press ring 7, and the specific implementation mode is that the first support piece 5 and the second support piece 6 are respectively used for supporting the first press ring 7 and the second press ring 8, wherein the second support piece 6 is provided with an opening opposite to the wafer transfer port 4, and the opening can be used for the second press ring 8 and the transmission device to pass through when the transmission device is taken out or put in the second press ring 8. Therefore, the process of vacuum recovery of the cavity can be saved, the equipment utilization rate can be improved, and the productivity can be improved.
The second supporting member 6 may have various structures, for example, as shown in fig. 2, the second supporting member 6 includes two supporting blocks, the two supporting blocks are connected to the first supporting member 5 and are oppositely disposed at two sides of the sheet passing opening 4 along the horizontal direction, and a space between the two supporting blocks forms the opening, that is, the transmission device and the second pressing ring 8 may pass through the space between the two supporting blocks. Each of the supporting blocks is configured, for example, as shown in fig. 4, and includes a fan-shaped body 61, and a stepped portion 62 lower than the upper surface of the fan-shaped body 61 is formed near the inner side edge of the second pressing ring 8, and the stepped portion 62 is configured to support the second pressing ring 8 and define the position of the second pressing ring 8 on the fan-shaped body 61. Specifically, the step portion 62 has a bottom surface for supporting an edge region of the lower surface of the second pressure ring 8 and an arc-shaped side surface; the curved side faces serve to define the position of the second pressure ring 8 on the sector-shaped body 61. Preferably, the center of the circumference of the arc-shaped side surfaces of the step portions 62 in the two support blocks coincides with the center of the upper surface of the base 3, so as to facilitate the centering of the second pressing ring 8 with the base 3.
The larger the central angle of the fan-shaped body 61 is, the more stable the support of the second pressing ring 8 is, but the larger the central angle of the fan-shaped body 61 is, the narrower the space between the two supporting blocks is, so that the central angle is not too large to avoid affecting the transmission of the second pressing ring 8. In practical applications, the sector-shaped body 61 may be replaced by any other arbitrary shape.
Alternatively, each support block may be fixedly connected to the first support 5, for example to the first annular extension 51 described above. Specifically, in the present embodiment, as shown in fig. 4, the outer side edge of the fan-shaped body 61 away from the second compression ring 8 is provided with a connecting portion 63, the connecting portion 63 may be overlapped on the bottom of the first annular extension 51, and a hole 63a is installed in the connecting portion 63 for installing a screw to fix the connecting portion 63 and the first annular extension 51 together. In addition, as shown in fig. 2, the height of the fan-shaped body 61 should be as close as possible to the upper edge of the wafer transfer opening 4, so that not only enough space is provided for the transfer of the second pressing ring 8 in the vertical direction, but also the transfer of the wafer below the second pressing ring 8 is not affected.
Alternatively, as shown in fig. 3, the first press ring 7 comprises a first annular body 71, the lower surface 71c of the first annular body 71 being superposed on the edge region of the upper surface of the second press ring 8 when the susceptor 3 is in the processing position; a first annular flange 71a is formed on the inner peripheral surface of the first annular body 71 (i.e., constituting an eave structure), and the lower surface of the first annular flange 71a is spaced apart from the upper surface of the second pressure ring 8 to form an annular gap 71 b. By means of the first annular flange 71a, a part of the area of the upper surface of the second press ring 8 which is not pressed can be shielded to prevent the film from being deposited on the part of the area, and since the part of the area is adjacent to the area of the upper surface of the second press ring 8 which is pressed by the lower surface 71c of the first annular body 71, the film deposited on the second press ring 8 can be obviously separated from the area of the upper surface of the second press ring 8 which is pressed, so that the situation that the second press ring 8 cannot be separated from the first press ring 7 due to the fact that the film deposited on the second press ring 8 is connected with the pressed area can be avoided.
Similarly, the second pressure ring 8 comprises a second annular body 81, the lower surface of which 81 is superposed on the upper surface edge region of the wafer 16 placed on the susceptor 3 when the susceptor 3 is in the processing position; a second annular flange 81a (i.e., constituting an eave structure) is formed on the inner peripheral surface of the second annular body 81, and the lower surface of the second annular flange 81a is spaced apart from the upper surface of the wafer 16. By means of the second annular flange 81a, a portion of the upper surface of the wafer 16 that is not pressed can be shielded to block the deposition of the thin film on the portion of the upper surface, and since the portion of the upper surface of the wafer 16 is adjacent to the area pressed by the lower surface of the second annular body 81, the blocking can separate the thin film deposited on the wafer 16 from the area pressed by the upper surface of the wafer 16, so that the situation that the wafer 16 cannot be separated from the second pressing ring 8 due to the thin film deposited on the wafer 16 being connected to the area pressed can be avoided.
Optionally, in order to further prevent the second press ring 8 from being detached from the first press ring 7, a first annular groove 81c and a second annular groove 81b surrounding the first annular groove 81c are formed on the upper surface of the second annular body 81, wherein an opening of the first annular groove 81c is opposite to the inner periphery of the first annular flange 71a, for example, two ends of the opening of the first annular groove 81c in the radial direction of the second press ring 8 are respectively located on two sides of the inner periphery of the first annular flange 71a, which can prevent the thin film deposited on the second press ring 8 from being connected to the first press ring 7 to some extent because the first annular groove 81c can accommodate a part of the sputtered material during the process. Similarly, the opening of the second annular groove 81b is opposite to the inner peripheral edge of the first annular body 71a, for example, both ends of the opening of the second annular groove 81b in the radial direction of the second press ring 8 are respectively located at both sides of the inner peripheral edge of the first annular body 71a, which also can prevent the thin film deposited on the second press ring 8 from being connected with the first press ring 7 to some extent since the second annular groove 81b can accommodate a part of the sputtered material during the process. In addition, since the thickness of the deposited film is thicker as it is closer to the inner peripheral edge of the upper surface of the second pressure ring 8, the depth and radial width of the first annular groove 81c can be made larger than those of the second annular groove 81b, so that the capacity of the second annular groove 81b is made larger than that of the first annular groove 81 c.
In the present embodiment, as shown in fig. 6 and 7, the upper end surfaces of at least three support columns 14 jointly form a first support surface 14a for supporting the edge area of the lower surface of the wafer 16, a limiting section 141 protruding from the upper end surface (i.e., the first support surface 14a) of each support column 14 is disposed on each support column 14, and the upper end surfaces of the limiting sections 141 on at least three support columns 14 jointly form a second support surface 141b for supporting the second pressure ring 8. Thus, the at least three support columns 14 can support the wafer from the susceptor 3 by using the first supporting surface 14a, and can support the second pressing ring 8 from the second supporting member 6 by using the second supporting surface 141 b.
Optionally, the spacing segments 141 of the at least three support columns 14 can form a spacing space above the first carrying surface 14a, and the size of the opening of the spacing space increases in a direction away from the first carrying surface 14a, so as to calibrate the position of the wafer on the first carrying surface 14 a. Even if the wafer 16 is displaced during the process of lowering onto the first carrying surface 14a, the above-mentioned spacing space can self-calibrate the position of the wafer 16, so as to control the displacement of the wafer 16 within a small range. Optionally, the size of the maximum opening of the limiting space is set as follows: the distance between the edge of the wafer 16 on the first carrying surface 14a and the inner side of the position-limiting section 141 is less than 1mm, so as to ensure that the wafer 16 and the centers of the circumferences of the at least three supporting columns 14 tend to be concentric.
Specifically, the structure of each position-limiting section 141 that can form the position-limiting space may be various, for example, in this embodiment, as shown in fig. 6, the side surface of the position-limiting section 141 facing the base 3 is an inclined surface 141a, and the inclined surface 141a is formed by cutting a cylinder obliquely from the upper end surface of the cylinder, for example. The cylinder is for example a cylinder or any other shape.
It should be noted that the structure of each of the limiting sections 141 that can form the limiting space is not limited to the above structure, for example, the limiting section 141 may also be a tapered section, for example, the tapered section is a truncated cone, which can also form the limiting space. In practical applications, the tapered section may have a circular, polygonal or any other shape in cross-section parallel to the first bearing surface 14 a.
Alternatively, as shown in fig. 6, the included angle a between the inclined surface 141a and the horizontal plane is greater than 60 ° and equal to or less than 80 °. Thus, the wafer 16 can slide along the inclined surface 141a, and the wafer 16 is prevented from being clamped on the upper end surface of the stopper 141 due to a slight eccentricity and being unable to slide along the inclined surface 141a onto the first carrying surface 14 a. In addition, if the limiting section 141 is a tapered section, the included angle a between the generatrix of the tapered section and the horizontal plane may be greater than 60 ° and equal to or less than 80 °.
Optionally, as shown in fig. 6 and 7, the upper end surfaces of the limiting segments 141 on the at least three supporting columns 14 jointly form a second bearing surface 141b for supporting the second pressing ring 8; and, an annular fitting portion 83 is provided at the bottom of the second pressing ring 8, and the annular fitting portion 83 is slidably fitted with the stopper section 141 to calibrate the position of the second pressing ring 8 on the second bearing surface 141 b. Specifically, the second pressure ring 8 has a contact surface 82 at the bottom thereof, which contacts the second bearing surface 141b, the annular engaging portion 83 protrudes from the contact surface 82, and the outer circumferential surface of the annular engaging portion 83 is a tapered annular surface, and if the stopper section 141 is provided with the inclined surface 141a, the inclined angle of the tapered annular surface is the same as the inclined angle of the inclined surface 141a, so that the position of the second pressure ring 8 on the second bearing surface 141b can be adjusted by slidably engaging the tapered annular surface with the inclined surface 141 a. Similarly, if the limiting section 141 is a conical section, the inclination angle of the generatrix of the conical section is the same as the inclination angle of the conical ring surface, so that the position of the second pressing ring 8 on the second bearing surface 141b can be calibrated by enabling the conical ring surface to be in sliding fit with the outer circumferential surface of the conical section.
In the process that the at least three support columns 14 ascend until the second bearing surfaces 141b of the support columns contact with the contact surface 82 of the second pressing ring 8, even if the second pressing ring 8 deviates in position, the limiting section 141 can self-calibrate the position of the second pressing ring 8, so that the deviation of the position of the second pressing ring 8 is always controlled in a small range.
In the process of placing the wafer 16, taking the transmission device as a manipulator for carrying the wafer in a loading manner as an example, before the process is performed, the susceptor 3 is preset at a wafer placing and placing position a 1; firstly, a manipulator 21 carrying a wafer 16 extends into the chamber 1 through the wafer transfer port 4 and moves to a first height position above the susceptor 3, and the position of the manipulator 21 is shown in fig. 8A; then, the robot 21 is lowered to a second height position, so that the wafer 16 falls onto the first carrying surface 14a of the at least three supporting columns 14, as shown in fig. 8B; then, the manipulator 21 moves out of the cavity 1, the at least three support columns 14 ascend, and in the ascending process, the second bearing surface 141b of the limiting section 141 contacts with the contact surface 82 of the second pressing ring 8 to support the second pressing ring 8 to be separated from the second supporting member 6, and the position of the second pressing ring 8 is self-calibrated; finally, the susceptor 3 is raised from the pick-and-place position a1, and during the raising, the susceptor 3 first holds up the wafer 16, and the wafer 16 holds up the second pressing ring 8 while continuing to raise, and then the second pressing ring 8 holds up the first pressing ring 6 while continuing to raise until the process position a2 is reached, as shown in fig. 8C.
After the process is completed, the base 3 descends, the first pressing ring 7, the second pressing ring 8 and the wafer 16 descend along with the base, and in the descending process, the first pressing ring 7 falls onto the first support 5; the second press ring 8 falls onto the second support 6; the wafer 16 is dropped onto the first carrying surface 14a of the at least three support columns 14, and then the robot 21 is used in cooperation with the at least three support columns 14 to transfer the wafer 21 out of the chamber 1.
When the second press ring 8 needs to be replaced, the second press ring 8 needs to be taken out from the process chamber, and then a new second press ring 8 is placed into the process chamber. Taking the conveying device as a manipulator for carrying the wafer in a loading manner as an example, the susceptor 3 is preset at a wafer taking and placing position A1; first, the robot 21 extends into the chamber 1 and moves to a first height position above the base 3, where the position of the robot 21 is shown in fig. 9A; then, the manipulator 21 is lifted to the third height position, and during the lifting process, the manipulator 21 holds up the second press ring 8 to be separated from the second support member 6, as shown in fig. 9B and 9C; finally, the manipulator 21 carrying the second press ring 8 is sequentially conveyed out of the cavity 1 through the opening in the second support 6 and the wafer conveying port 4, so that the second press ring 8 is taken out.
In summary, in the process chamber of the semiconductor process apparatus provided in the embodiment of the present invention, two pressure rings are adopted, and the transfer device (e.g., a robot) is used to take out or put in the second pressure ring, so as to replace the second pressure ring without opening a cavity to replace the second pressure ring or replacing the first pressure ring. Therefore, the process of vacuum recovery of the cavity can be saved, the equipment utilization rate can be improved, and the productivity can be improved.
As another technical solution, referring to fig. 10, a wafer transfer method according to an embodiment of the present invention is applied to the process chamber according to an embodiment of the present invention, taking a transfer device as a robot for carrying a wafer in a carrying manner as an example, and with reference to fig. 8A to 8C, the wafer transfer method according to an embodiment of the present invention includes the following steps:
s101, controlling a mechanical arm carrying the wafer 16 to extend into the cavity 1 through the wafer transfer port 4 and move to a first height position (the position of the mechanical arm shown in FIG. 8A) above the susceptor 3 at a wafer taking and placing position A1;
s102, controlling the robot to descend to a second height position (the position of the robot shown in fig. 8B), so that the wafer 16 falls onto the first carrying surface of the at least three supporting columns 14;
s103, controlling the manipulator to move out of the cavity 1 through the wafer conveying port 4, and controlling at least three support columns 14 to ascend so as to enable the second bearing surface to support the second pressing ring 8 from the second support piece 6;
and S104, controlling the susceptor 3 to ascend from the wafer taking and placing position A1, and sequentially lifting the wafer 16, the second press ring 8 and the first press ring 7 in the ascending process until the wafer reaches a process position A2, as shown in FIG. 8C.
Optionally, the wafer transmission method provided in the embodiment of the present invention further includes the following steps:
s105, controlling the base 3 to descend from the process position A2 to the sheet taking and placing position A1 so that the first press ring 7 falls onto the first support 5; the second press ring 8 falls onto the second support 6; the wafer 16 falls onto the first carrying surface of at least three support pillars 14;
s106, controlling the manipulator to extend into the cavity 1 through the sheet conveying opening 4 and move to the second height position;
s107, controlling the manipulator to ascend to the first height position and supporting the wafer 16 in the ascending process;
and S108, controlling the manipulator to move out of the cavity 1 through the film transfer port 4.
According to the wafer transmission method provided by the embodiment of the invention, the wafer can be transmitted in and out on the basis of adopting the two pressure rings, so that the process of vacuum recovery of the cavity can be saved, the utilization rate of equipment can be further improved, and the productivity can be further improved.
As another technical solution, an embodiment of the present invention further provides a pressure ring transmission method, which is applied to the process chamber provided in the embodiment of the present invention, and with reference to fig. 11 and fig. 9A to 9C, the pressure ring transmission method includes the following steps:
s201, controlling the manipulator to extend into the cavity 1 through the film transfer port 4 and move to a first height position (such as the position of the manipulator shown in FIG. 9A) above the base 3 at the film taking and placing position;
s202, controlling the manipulator to ascend to a third height position (such as the position of the manipulator shown in the figures 9B and 9C), and supporting the second pressure ring 8 in the ascending process;
and S203, controlling the manipulator carrying the second press ring 8 to move out of the cavity 1 through the opening and the wafer transfer port 4.
Optionally, as shown in fig. 12, the compression ring transmission method further includes the following steps:
s301, controlling the manipulator bearing the second press ring to extend into the process chamber through the wafer conveying opening and move to the third height position through the opening;
s302, controlling the manipulator to descend to the first height position so that the second pressing ring 8 falls onto the second support 6;
and S303, controlling the manipulator to move out of the cavity 1 through the film transfer port 4.
According to the wafer transmission method provided by the embodiment of the invention, the two pressure rings are adopted, and the transmission device (such as a mechanical arm) is used for taking out or putting in the second pressure ring, so that the second pressure ring is replaced without opening a cavity to replace the second pressure ring or replacing the first pressure ring, the process of vacuum recovery of the cavity can be saved, the utilization rate of equipment can be further improved, and the productivity can be further improved.
As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, including a process chamber, where the process chamber provided by the embodiment of the present invention is adopted.
The embodiment of the invention provides semiconductor process equipment, and by adopting the process chamber provided by the embodiment of the invention, cavity opening and pressure ring replacement are not needed, so that the vacuum recovery process of the chamber can be saved, the utilization rate of the equipment can be improved, and the productivity can be improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (15)
1. A process chamber in semiconductor process equipment comprises a chamber body, a lining and a liftable base, wherein the lining and the liftable base are arranged in the chamber body, and a sheet conveying port for a conveying device to pass through is arranged on the side wall of the chamber body;
the second supporting piece is arranged below the first supporting piece and used for supporting the second pressing ring; the second support piece is provided with an opening opposite to the sheet conveying opening, and the opening is used for allowing the second pressing ring and the transmission device to pass through when the transmission device is taken out or put in the second pressing ring;
the inner diameter of the first pressing ring is larger than that of the second pressing ring, the base rises to the process position, the base can jack up the second pressing ring and the first pressing ring in sequence, the base reaches when the process position, the second pressing ring can be stacked in the edge area of the upper surface of the wafer on the base, and the first pressing ring can be stacked in the edge area of the upper surface of the second pressing ring.
2. The process chamber of claim 1, wherein the second support member comprises two support blocks, wherein the two support blocks are connected with the first support member and are oppositely arranged on two sides of the wafer transferring port along the horizontal direction, and a spacing space between the two support blocks forms the opening.
3. The process chamber of claim 2, wherein the support block is formed with a step portion lower than an upper surface of the support block near an inner edge of the second press ring, the step portion being configured to support the second press ring and define a position of the second press ring on the support block.
4. The process chamber of claim 2 or 3, wherein the first support comprises a first annular extension extending horizontally from a lower end of the liner toward an inner side of the liner, and a second annular extension extending upward from an inner periphery of the first annular extension, wherein,
the supporting block is connected with the first annular extension part;
the upper end of the second annular extension part is used for supporting the first pressing ring.
5. The process chamber of claim 1, wherein the first pressure ring comprises a first annular body having a lower surface that overlies an edge region of an upper surface of the second pressure ring when the susceptor is in the process position; a first annular flange is formed on the inner circumferential surface of the first annular body, and the lower surface of the first annular flange and the upper surface of the second pressing ring are arranged at intervals;
a first annular groove and a second annular groove surrounding the first annular groove are formed in the upper surface of the second pressure ring, wherein the opening of the first annular groove is opposite to the inner peripheral edge of the first annular flange; the opening of the second annular groove is opposite to the inner periphery of the first annular body, and the radial width of the first annular groove is larger than that of the second annular groove.
6. The process chamber of claim 1 or 5, wherein the second pressure ring comprises a second annular body having a lower surface that overlies an upper surface edge region of a wafer placed on the susceptor when the susceptor is in the process position; and a second annular flange is formed on an inner peripheral surface of the second annular body, and a lower surface of the second annular flange is spaced apart from an upper surface of the wafer.
7. The process chamber of claim 1, further comprising at least three liftable support pillars disposed in the chamber, wherein the at least three support pillars are circumferentially spaced around the susceptor, upper end surfaces of the at least three support pillars jointly form a first bearing surface supporting a lower surface edge region of the wafer, each support pillar is provided with a limiting section protruding relative to an upper end surface of the support pillar, and upper end surfaces of the limiting sections on the at least three support pillars jointly form a second bearing surface supporting the second pressure ring.
8. The process chamber of claim 7, wherein the retaining segments on at least three of the support columns form retaining spaces above the first support surface, the retaining spaces having openings with increasing dimensions in a direction away from the first support surface for aligning the position of the wafer on the first support surface.
9. The process chamber of claim 8, wherein a side of the confinement section facing the pedestal is a sloped surface, or the confinement section is a tapered section; wherein the content of the first and second substances,
the included angle between the generatrix of the inclined plane or the conical section and the horizontal plane is more than 60 degrees and less than or equal to 80 degrees.
10. The process chamber according to claim 8 or 9, wherein an annular engaging portion is provided at a bottom of the second pressing ring, and the annular engaging portion is slidably engaged with the limiting segment for aligning a position of the second pressing ring on the second carrying surface.
11. A wafer transfer method applied to the process chamber of any one of claims 7 to 10, the wafer transfer method comprising the steps of:
s101, controlling the transmission device carrying the wafer to extend into the cavity through the wafer conveying port and move to a first height position above the base at the wafer taking and placing position;
s102, controlling the transmission device to descend to a second height position so that the wafer falls onto the first bearing surfaces of at least three support columns;
s103, controlling the transmission device to move out of the cavity through the wafer conveying port, and then controlling at least three support columns to ascend so that the second bearing surface supports the second pressure ring from the second support piece;
and S104, controlling the base to ascend from the position of the taking and placing piece, and sequentially supporting the wafer, the second pressing ring and the first pressing ring in the ascending process until the wafer reaches the process position.
12. The wafer transfer method of claim 11, further comprising the steps of:
s105, controlling the base to descend from the process position to the chip taking and placing position, so that the first pressing ring falls onto the first supporting piece; the second press ring falls onto the second support; the wafer falls onto the first bearing surfaces of at least three support columns;
s106, controlling the transmission device to extend into the cavity through the sheet conveying opening and move to the second height position;
s107, controlling the transmission device to ascend to the first height position and supporting the wafer in the ascending process;
and S108, controlling the conveying device to move out of the process chamber through the sheet conveying port.
13. A pressure ring transfer method applied to the process chamber of any one of claims 7 to 10, the pressure ring transfer method comprising the steps of:
s201, controlling the transmission device to extend into the cavity through the sheet conveying port and move to a first height position above the base at the sheet taking and placing position;
s202, controlling the transmission device to ascend to a third height position, and supporting the second pressure ring in the ascending process;
s203, controlling the transmission device carrying the second press ring to move out of the cavity through the opening and the sheet passing port successively.
14. A pressure ring transfer method according to claim 13, further comprising the steps of:
s301, controlling the transmission device carrying the second press ring to extend into the cavity through the sheet conveying opening and move to the third height position through the opening;
s302, controlling the transmission device to descend to the first height position so that the second pressing ring falls onto the second support;
s303, controlling the transmission device to move out of the cavity through the film transmission port.
15. A semiconductor processing apparatus comprising a process chamber, wherein the process chamber is the process chamber of any one of claims 1-10.
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| CN113972154A (en) * | 2021-10-20 | 2022-01-25 | 北京北方华创微电子装备有限公司 | Process chamber, semiconductor processing equipment and semiconductor processing method |
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