CN102468207B - The using method of wafer supporting plate and wafer supporting plate - Google Patents
The using method of wafer supporting plate and wafer supporting plate Download PDFInfo
- Publication number
- CN102468207B CN102468207B CN201110329279.4A CN201110329279A CN102468207B CN 102468207 B CN102468207 B CN 102468207B CN 201110329279 A CN201110329279 A CN 201110329279A CN 102468207 B CN102468207 B CN 102468207B
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- wafer
- supporting plate
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- scratch diskette
- wafer supporting
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000005520 cutting process Methods 0.000 claims abstract description 76
- 238000003860 storage Methods 0.000 claims abstract description 3
- 230000032258 transport Effects 0.000 claims description 19
- 238000012423 maintenance Methods 0.000 claims description 14
- 238000003754 machining Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- HODFCFXCOMKRCG-UHFFFAOYSA-N bitolterol mesylate Chemical compound CS([O-])(=O)=O.C1=CC(C)=CC=C1C(=O)OC1=CC=C(C(O)C[NH2+]C(C)(C)C)C=C1OC(=O)C1=CC=C(C)C=C1 HODFCFXCOMKRCG-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 230000011218 segmentation Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- UAJUXJSXCLUTNU-UHFFFAOYSA-N pranlukast Chemical compound C=1C=C(OCCCCC=2C=CC=CC=2)C=CC=1C(=O)NC(C=1)=CC=C(C(C=2)=O)C=1OC=2C=1N=NNN=1 UAJUXJSXCLUTNU-UHFFFAOYSA-N 0.000 description 1
- 229960004583 pranlukast Drugs 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides the using method that can carry out to wafer wafer supporting plate and the wafer supporting plate of half cut-off in the situation that not using cutting band. Support and transport a wafer supporting plate for wafer, this wafer supporting plate is characterised in that, comprising: wafer supporting portion, and it is formed by circular depressions, storage wafer and supporting; Multiple through holes, it is formed at the bottom of this circular depressions; And frame section, it is around this wafer supporting portion, and the delivery unit of processing unit (plant) acts on this frame section.
Description
Technical field
The present invention relates to wafer supporting plate for supporting and transport wafer and the using method of this wafer supporting plate.
Background technology
For example,, in process for fabrication of semiconductor device, by be formed at the roughly semiconductor of circular plate shape with clathrateThe surperficial Cutting Road (cutting apart preset lines) of wafer and the regional divided forms respectively the device such as IC, LSI, pre-along cutting apartAlignment is cut apart the regional that is formed with this device, thereby produces each device.
As the segmenting device that semiconductor wafer is divided into each device, general use is called as the cutting of cutter sweepDevice, this topping machanism cuts semiconductor wafer by having the bite of very thin cutting edge along cutting apart preset lines,Thereby wafer is divided into each device. Divided like this device is packaged and be extensively used in portable phone or PCDeng electrical equipment.
In recent years, people require lightweight, the miniaturization of the electrical equipment such as portable phone or PC, require thinnerDevice. As the technology that wafer is divided into thinner device, develop the so-called cutting techniques that is called first patterning method, and be able toPractical (for example,, with reference to Japanese kokai publication hei 11-40520 communique).
This elder generation's patterning method is (to be equivalent to device along cutting apart preset lines from the surface formation desired depth of semiconductor waferThe degree of depth of fine finishining thickness) slot segmentation, then grinding be formed with on surface slot segmentation semiconductor wafer the back side and makeSlot segmentation exposes at this back side, thereby wafer is divided into the technology of each device, and this technology can be by the thickness processing of deviceBe below 50 μ m.
Formerly, in patterning method, wafer incomplete cut-off is carried out to half cut-off, while therefore cutting completely without use, useCutting belt, and in order to save cutting belt, the applicant has developed Special cutting device for implementing half cut-off (with reference to JapanJP 2004-235622 communique).
Patent documentation 1 Japanese kokai publication hei 11-40520 communique
Patent documentation 2 TOHKEMY 2004-235622 communiques
Patent documentation 3 JP 2005-166969 communiques
But in patent documentation 2, the special topping machanism of disclosed half cut-off does not have application widely, is not implementingIn the situation of half cut-off, operation is interrupted, and has the bad problem of productivity. In addition, if by cutting belt, by ring-shaped frameSupporting wafer, although can use general cutting to bring enforcement half cut-off, because needs use cutting belt, therefore existsSub-economic problem.
Summary of the invention
The present invention puts in view of the above problems and researches and develops, while the object of the present invention is to provide one by wafer half cut-offCut off the wafer supporting plate of band and the using method of this wafer supporting plate without using.
According to the invention of technical scheme one, provide a kind of for supporting and transport the wafer supporting plate of wafer, this wafer props upBoard is characterised in that, comprising: wafer supporting portion, and it is formed by circular depressions, storage wafer and supporting; Multiple through holes,It is formed at the bottom of this circular depressions; And frame section, it is around this wafer supporting portion, and the delivery unit of processing unit (plant) is doneFor this frame section.
Be preferably, dispose Anti-skid sheet in the bottom of circular depressions.
According to the invention of technical scheme three, provide the wafer supporting described in a kind of claim 1 or 2 in processing unit (plant)The using method of plate, wherein, this processing unit (plant) comprises: scratch diskette, it has maintenance face, and on this maintenance face, effect has the crystalline substance of maintenanceThe attraction of sheet; Machining cell, it implements predetermined processing to the wafer remaining on this scratch diskette; The 1st delivery unit, its toThis scratch diskette is transported into wafer; And the 2nd delivery unit, it transports wafer from this scratch diskette, the using method of this wafer supporting plateBe characterised in that, comprise: wafer is transported into step, the 1st delivery unit is to being accommodated with this framework of this wafer supporting plate of waferPortion acts on, and wafer is transported into the maintenance face of this scratch diskette; Keep step, to the maintenance face effect attraction of this scratch diskette,Attract and keep wafer by being formed at the plurality of through hole of bottom of this circular depressions; Procedure of processing, by this work sheetUnit implements predetermined processing to wafer; Wafer transports step, and the 2nd delivery unit that transports wafer from this scratch diskette is acted onThis frame section of this wafer supporting plate, and remove the attraction of maintenance face that acts on this scratch diskette, transport from this scratch disketteWafer.
Be preferably, the degree of depth of the circular depressions of wafer supporting plate is set than the bottom of the cutting slot from being formed at waferDistance to the back side of wafer is shallow.
By carrying out supporting wafer by wafer supporting plate of the present invention, even if do not use the special cutting dress of implementing half cut-offPut, also without using cutting band and can using general topping machanism and wafer is carried out to half cut-off, therefore both economical. AndAnd wafer supporting plate of the present invention can be reused, therefore both economical.
Further, in the surface irradiation to wafer, wafer is had the laser beam of absorbefacient wavelength and implements to melt processingForm the laser processing device of slot segmentation and to the inside optically focused of wafer and irradiate the swashing of wavelength wafer to permeabilityLight beam and also can use wafer supporting plate of the present invention in the inner laser processing device that forms upgrading layer of wafer, can keep awayThe use of without cutting band, therefore both economical.
Brief description of the drawings
Fig. 1 is the stereoscopic figure of topping machanism.
Fig. 2 is the exploded perspective view that represents to be come by the wafer supporting plate of embodiment of the present invention the appearance of supporting wafer.
Fig. 3 carrys out the stereogram under the state of supporting wafer by wafer supporting plate.
Fig. 4 is the profilograph of wafer supporting plate.
Fig. 5 is the stereogram of the appearance that represents that the wafer to being supported by wafer supporting plate cuts.
Symbol description
2 topping machanisms
18 scratch diskettes
24 cutting units
28 bites
30 wafer supporting plates
32 circular depressions (wafer supporting portion)
33 frame sections
34 through holes
Detailed description of the invention
Describe embodiments of the present invention in detail with reference to accompanying drawing below. With reference to Fig. 1, in this figure, represent to useWafer supporting plate of the present invention and by the stereoscopic figure of the topping machanism of wafer half cut-off 2.
Be provided with the operation sheet for inputted the instruction to device such as processing conditions by operator in the front face side of topping machanism 2Unit 4. Be provided with the display units such as CRT 6 on device top, on this display unit 6, show the guiding picture to operator and pass throughThe image that image unit described later is made a video recording.
As shown in Figures 2 and 3, on the surface of the device wafer W as cutting object, be formed with the 1st in orthogonal modeCutting Road (cutting apart preset lines) S1 and the 2nd Cutting Road (cutting apart preset lines) S2, multiple device D cut by the 1st Cutting Road S1 and the 2ndCutting S2 is divided and is formed in wafer W. The 11st, as the otch of mark of crystal orientation that represents silicon wafer W.
With reference to Fig. 2, in this figure, represent to be come by the wafer supporting plate 30 of embodiment of the present invention the appearance of supporting wafer WExploded perspective view. Wafer supporting plate 30 has circular depressions 32, and this circular depressions 32 has than slightly large straight of the diameter of wafer WFootpath, is formed with multiple through holes 34 in the bottom of circular depressions 32. In addition, be formed with and the cutting of wafer W in the face of circular depressions 32The projection 31 that mouth 11 is chimeric.
Wafer supporting plate 30 has the frame section 33 around circular depressions 32, and the delivery unit of topping machanism 2 acts on thisFrame section 33 and transport wafer supporting plate 30. Wafer supporting plate 30 is preferably formed by resin, but also can be formed by metals such as aluminium.
Wafer supporting plate 30 is for carrying out half cut-off to wafer W, and therefore the degree of depth of circular depressions 32 is set to than from shapeThe slightly shallow degree of depth of distance at the back side of wafer W is arrived in the bottom that is formed in the cutting slot of wafer W. For example, if the thickness of wafer W be700 μ m, the degree of depth of cutting slot is 100 μ m, the depth ratio 600 μ m of circular depressions 32 are shallow, for example, be set to 500 μ m.
Fig. 3 represents the wafer supporting portion using circular depressions 32 as supporting wafer W, makes the projection 31 of wafer supporting plate 30Chimeric with the otch 11 of wafer W, wafer W is inserted to the stereogram under the state in circular depressions 32. Preferably, as the vertical profile of Fig. 4Shown in face figure, dispose Anti-skid sheet 36 in the bottom of the circular depressions 32 of supporting wafer.
On Anti-skid sheet 36, be also formed with the multiple through holes 37 that are communicated with through hole 34. By playing work as wafer supporting portionWith the bottom of circular depressions 32 Anti-skid sheet 36 is set, thereby prevent from carrying out supporting wafer W and transporting by wafer supporting plate 30Process in wafer W fly out from circular depressions 32.
Refer again to Fig. 1, in wafer case 8, be accommodated with the many pieces of wafer W that supported by wafer supporting plate 30. Wafer case 8 loadsIn the cassette elevator 9 that can move up and down.
Dispose and transport into unit 10 at the rear of wafer case 8, this transports unit 10 and transports cutting from wafer case 8Wafer W, and the wafer after cutting is transported into wafer case 8.
In wafer case 8 and transport and be provided with temporary transient mounting between unit 10 and transport into the region of the wafer W of object interimPut area 12 disposes wafer W contraposition in certain locational bit cell 14 in interim put area 12.
Near at interim put area 12 disposes delivery unit 16, and this delivery unit 16 has turning arm, this rotationArm adsorbs the frame section 33 of the wafer supporting plate 30 that has supported wafer W and transports, and transports the crystalline substance of interim put area 12Sheet W is transported unit 16 and adsorbs and be transported on scratch diskette 18, on the maintenance face of this scratch diskette 18, be attracted, and by byMultiple clamping plate 19 fix the frame section 33 of wafer supporting plate 30 and remain on scratch diskette 18.
Scratch diskette 18 is configured to and can rotates and can in X-direction, carry out back and forth movement, in the X-axis side of scratch diskette 18To the top of mobile route dispose the aligned units 20 of the Cutting Road that should cut that detects wafer W.
Aligned units 20 has the image unit 22 of being made a video recording in the surface of wafer W, can be according to obtaining by shootingImage, detect the Cutting Road that should cut by processing such as pattern match. The image of being obtained by image unit 22 is displayed onOn display unit 6.
Dispose cutting unit 24 in the left side of aligned units 20, this cutting unit 24 is to remaining on the wafer of scratch diskette 18W implements machining. Cutting unit 24 forms with aligned units 20 one, and both link and move in Y direction and Z-directionMoving.
Cutting unit 24 is installed bite 28 and forms at the front end of the main shaft 26 that can rotate, and can be in Y directionAnd move in Z-direction. Bite 28 is positioned on the extended line of X-direction of image unit 22.
The wafer W that completes cutting is transported and is transported to rotation wash mill 27 from scratch diskette 18 by delivery unit 25,Spin and wash and spin dry by rotation wash mill 27.
Below, the as above using method of the wafer supporting plate 30 of the embodiment of the present invention of structure is described. WaferThe using method of support plate comprises the steps: that wafer is transported into step, and the delivery unit 16 that is transported into wafer W acts on to be received and prop upHold the frame section 33 of the wafer supporting plate 30 of wafer W, wafer W is transported into the maintenance face of scratch diskette 18; And maintenance step, will inhaleGraviational interaction is in the maintenance face of scratch diskette 18, by being formed at multiple through holes of bottom of circular depressions 32 of wafer holding plate 3034 and attract and keep wafer W.
As mentioned above, by wafer supporting plate 30 after scratch diskette 18 attracts and keeps wafer W, by cutting unit(machining cell) 24 implements wafer W to carry out the cutting step of machining. About this cutting step, carry out with reference to Fig. 5Explanation.
With reference to Fig. 5, in this figure, represent to be supported by wafer supporting plate 30 along Cutting Road cutting by cutting unit 24The stereogram of the appearance of wafer W. The 25th, the main shaft housing of cutting unit 24 can be accommodated with rotatably master in main shaft housing 25Axle 26, this main shaft 26 rotarilys actuate by not shown servo motor. Bite 28 is electroforming cuttves, has at its peripheral partThe cutting edge 28a that disperses diamond whetstone grain to form in nickel mother metal.
The 40th, the cutter lid of covering bite 28, is provided with the not shown cutting water spray of extending along the side of bite 28Mouth and cutting water is ejected into the cutting water injection nozzle 46 of the contact area between cutting edge 28a and the wafer W of bite 28.
The cutting water that carrys out self-cutting water supply unit 44 is supplied to not shown cutting (operating) water nozzle by managing 42, by managing 48Cut water injection nozzle 46 and be supplied to. Cutting water is for example pressurised into about 0.3MPa in cutting water supply unit 44, with per minuteThe flow that clock is 1.6～2.0 liters sprays from cutting water injection nozzle 46.
The 50th, handling lid, can be loaded and unloaded and be arranged on cutter lid 40 by screw 52. Handling are covered 50 and are had along biteThe cutting (operating) water nozzle 54 that extend 28 side, cutting water is supplied to cutting (operating) water nozzle 54 by managing 56.
The 60th, be built-in with and detect the breach of cutting edge 28a of bite 28 or the detection of the blade of the blade sensor of abrasionPiece, can be loaded and unloaded and be arranged on cutter lid 40 by screw 62. Blade detects piece 60 and has the position of adjusting blade sensorAdjust screw 64.
Before cutting along Cutting Road S1, S2 the wafer W being supported by wafer supporting plate 30, by known pattern matchEtc. gimmick, aiming between Cutting Road S1, the S2 that enforcement should be cut and cutter 28.
Implement aim at after, carry out the contraposition between the 1st Cutting Road S1 and bite 28, by scratch diskette 18 in Fig. 5By moving in the X-direction shown in arrow X, and for example, by bite 28 to the direction High Rotation Speed of arrow A (30000rpm) time, cutting unit 24 is declined, on the 1st Cutting Road S1 after contraposition, form the predetermined degree of depth (with deviceThe suitable degree of depth of fine finishining thickness of part) slot segmentation.
The degree of depth of this slot segmentation is formed as the degree of depth above of the frame section 33 that does not arrive wafer supporting plate 30, for example, be100 μ m. As mentioned above, by by bite 28, wafer W being carried out to half cut-off, thereby in the situation of not damaging wafer supporting plate 30Can form down the slot segmentation of desired depth.
In being sent according to the Cutting Road spacing calibration in Y direction that is stored in memory, cutting unit 24 carries outCutting, thus by the whole half cut-ofves of the 1st Cutting Road S1, form identical slot segmentation. In addition, if by scratch diskette 18 90-degree rotationsAfterwards, carry out cutting same as described above,, by the whole half cut-ofves of the 2nd Cutting Road S2, form identical slot segmentation.
Like this, after implementing the procedure of processing of all Cutting Road S1, S2 half cut-off, remove the attraction of scratch diskette 18Power, acts on the frame section 33 of wafer supporting plate 30 by the adsorption section of delivery unit 25 and attracts and keep wafer supporting plate 30,Be transported to rotation wash mill 27, by rotation wash mill 27, wafer W spinned and washs and spin dry.
Then, after boundary belt is pasted on the surface of wafer W, the grinding by the back side grinding step of use grinding attachmentBe formed with the back side of the wafer of slot segmentation, make slot segmentation be exposed at this back side outward, thereby wafer W can be divided into each deviceD。
According to above-mentioned embodiments of the present invention, by carrying out supporting wafer W by wafer supporting plate 30, thereby even if do not makeWith the special topping machanism that carries out half cut-off, and use general cutter sweep and do not use cutting belt, also can be to wafer WCarry out half cut-off, therefore very economical. And wafer supporting plate 30 can be reused, therefore both economical.
In the above-described embodiment the example that wafer supporting plate 30 of the present invention is applicable to topping machanism 2 is carried outIllustrate, but wafer supporting plate 30 of the present invention is not limited to such using method, the present invention is equally applicable to the surface to wafer WIrradiate to wafer W there is the laser beam of absorbefacient wavelength and implement to melt processing form slot segmentation laser processing device andTo the inside optically focused of wafer W and irradiate to wafer W have permeability wavelength laser beam and at the inner upgrading layer that forms of waferLaser processing device in.
Claims (2)
1. a using method for the wafer supporting plate using in processing unit (plant), this wafer supporting plate is for supporting and transport crystalline substanceSheet, this processing unit (plant) comprises: scratch diskette, it has maintenance face, and on this maintenance face, effect has the attraction that keeps wafer; ProcessingUnit, it implements predetermined processing to the wafer remaining on this scratch diskette; The 1st delivery unit, it is transported into crystalline substance to this scratch disketteSheet; And the 2nd delivery unit, it transports wafer from this scratch diskette,
This using method is characterised in that,
This wafer supporting plate comprises:
Wafer supporting portion, it is formed by circular depressions, storage wafer and supporting;
Multiple through holes, it is formed at the bottom of this circular depressions; And
Frame section, it is around this wafer supporting portion, and the 1st delivery unit of this processing unit (plant) and the 2nd delivery unit effectIn this frame section,
This machining cell is made up of cutting unit, and this cutting unit has the bite of wafer being implemented to machining,
This using method comprises:
Wafer is transported into step, and the 1st delivery unit acts on this frame section of this wafer supporting plate that is accommodated with wafer, by waferBe transported into the maintenance face of this scratch diskette;
Keep step, to the maintenance face effect attraction of this scratch diskette, by being formed at bottom the plurality of of this circular depressionsThrough hole and attract and keep wafer;
Procedure of processing by this machining cell, forms cutting slot on by the wafer of this wafer supporting plate supporting; And
Wafer transports step, makes the 2nd delivery unit that transports wafer from this scratch diskette act on this frame of this wafer supporting plateFrame portion, and remove the attraction of maintenance face that acts on this scratch diskette, transport wafer from this scratch diskette,
The depth ratio of this circular depressions of this wafer supporting plate is from the bottom of cutting slot that is formed at wafer to the back side of waferDistance is shallow.
2. the using method of wafer supporting plate according to claim 1, is characterized in that,
Bottom in this circular depressions disposes Anti-skid sheet.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-243025 | 2010-10-29 | ||
| JP2010243025A JP5686570B2 (en) | 2010-10-29 | 2010-10-29 | How to use wafer support plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102468207A CN102468207A (en) | 2012-05-23 |
| CN102468207B true CN102468207B (en) | 2016-05-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110329279.4A Active CN102468207B (en) | 2010-10-29 | 2011-10-26 | The using method of wafer supporting plate and wafer supporting plate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5686570B2 (en) |
| KR (1) | KR101739975B1 (en) |
| CN (1) | CN102468207B (en) |
| TW (1) | TWI534953B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102810518A (en) * | 2012-07-13 | 2012-12-05 | 日月光半导体制造股份有限公司 | Wafer loading board structure and wafer bonding method |
| JP6317935B2 (en) * | 2014-02-05 | 2018-04-25 | 株式会社ディスコ | Holding table |
| KR101984929B1 (en) | 2017-01-17 | 2019-06-03 | 주식회사 네패스 | Tray for manufacturing semiconductor package |
| JP7539258B2 (en) | 2020-05-28 | 2024-08-23 | 株式会社ディスコ | Method for processing workpiece |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5764156U (en) * | 1980-09-30 | 1982-04-16 | ||
| US5195729A (en) * | 1991-05-17 | 1993-03-23 | National Semiconductor Corporation | Wafer carrier |
| JP3099235B2 (en) * | 1993-08-12 | 2000-10-16 | 株式会社東京精密 | Wafer inspection equipment |
| JP2001210708A (en) * | 2000-01-28 | 2001-08-03 | Dowa Mining Co Ltd | Substrate transfer method and tray therefor |
| JP4323129B2 (en) * | 2002-02-15 | 2009-09-02 | 株式会社ディスコ | Plate-like material transport mechanism |
| SG115602A1 (en) * | 2003-01-09 | 2005-10-28 | Disco Corp | Conveying device for a plate-like workpiece |
| US20050136653A1 (en) * | 2003-12-22 | 2005-06-23 | Ramirez Jose G. | Non-adhesive semiconductor wafer holder and assembly |
| JP2006120827A (en) * | 2004-10-21 | 2006-05-11 | Renesas Technology Corp | Manufacturing method of semiconductor device |
-
2010
- 2010-10-29 JP JP2010243025A patent/JP5686570B2/en active Active
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2011
- 2011-09-19 TW TW100133627A patent/TWI534953B/en active
- 2011-10-26 CN CN201110329279.4A patent/CN102468207B/en active Active
- 2011-10-26 KR KR1020110109778A patent/KR101739975B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120046034A (en) | 2012-05-09 |
| KR101739975B1 (en) | 2017-05-25 |
| JP5686570B2 (en) | 2015-03-18 |
| TWI534953B (en) | 2016-05-21 |
| JP2012094793A (en) | 2012-05-17 |
| TW201250922A (en) | 2012-12-16 |
| CN102468207A (en) | 2012-05-23 |
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