JP2002353170A - Dividing system, dividing method and dicing device for semiconductor wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To carry a semiconductor wafer to a grinding process without damaging it in so-called 'tip dicing', in which a dicing groove not passing through to a back surface is formed on the surface of the semiconductor wafer, then grinding the surface to divide into chips. SOLUTION: The dividing system 10 of the semiconductor wafer is constituted of a dicing area 11, forming the dicing groove not pass through to the back surface on the street of the surface of the semiconductor wafer, a tape adhesion area 12 adhering a protective tape on the surface where the dicing groove is formed and a grinding area 13 grinding the back surface of the semiconductor wafer, until the dicing groove is exposed. In the dicing area 11, after the dicing groove is formed, the semiconductor wafer is supported from the side of the back surface by a carrying tray. In the tape adhesion region 12 or the grinding region 13, before the back surface is ground in the grinding region 13, the carrying tray is detached from the semiconductor wafer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for separating individual chips by forming a dicing groove on the front surface of a semiconductor wafer which does not penetrate to the back surface and then grinding the back surface to expose the dicing groove. The present invention relates to a separation system and a dicing apparatus used for implementing the method.

[0002]

2. Description of the Related Art In order to respond to recent needs for thinning semiconductor chips, dicing is known as a technique for separating a semiconductor wafer having a plurality of circuits, such as ICs and LSIs, formed on a surface into individual chips. Technology is being developed.

In the prior dicing technique, a relatively shallow dicing groove that does not penetrate to the back surface is formed by cutting a cutting blade at a predetermined depth into a street formed vertically and horizontally on the front surface of the semiconductor wafer, and then the back surface of the semiconductor wafer is formed. Is a technique to separate the individual chips by exposing the dicing grooves from the back side by grinding the surface. By using this technique, it is possible to form a thin chip having a thickness of, for example, several tens of μm. .

[0004]

In ordinary dicing, which is not pre-dicing, protection is performed on the back surface of the semiconductor wafer in order to stably hold the semiconductor wafer to prevent breakage and also hold individual chips after separation. The tape is stuck. Since this protective tape has an adhesive layer whose thickness is not uniform, an error may occur in the cutting depth of the cutting blade with respect to the semiconductor wafer in a state where the protective tape is stuck on the back surface, In dicing, since the dicing groove penetrates to the back surface, it is not necessary to control the cutting depth of the cutting blade so precisely.

However, in pre-dicing, since the depth of the dicing groove directly affects the thickness of a chip to be finally formed, the dicing groove must be formed shallow and uniform. For this reason, if a protective tape is adhered to the back surface when forming the dicing groove on the front surface, an error occurs in the cutting depth of the cutting blade, which causes an error in the depth of the dicing groove. In this case, the protective tape cannot be attached to the back surface of the semiconductor wafer.

Therefore, in the pre-dicing, dicing grooves are formed by directly holding a semiconductor wafer on a chuck table of a dicing apparatus without attaching a protective tape to the back surface.

Accordingly, although the dicing groove is formed relatively shallow, the semiconductor wafer having the dicing groove formed thereon is fragile and easily broken, and is damaged when transported from the dicing device to another device such as a grinding device. There is a possibility that. In particular, the diameter of the semiconductor wafer is, for example, 300
When it is as large as mm, it becomes extremely fragile.

As described above, in pre-dicing, there is a problem in transporting a semiconductor wafer without damaging it in a process until a chip is formed by grinding.

[0009]

According to the present invention, as a specific means for solving the above-mentioned problems, a semiconductor wafer having a plurality of circuits formed on a surface and divided by streets is separated into chips for each individual circuit. A semiconductor wafer separation system, in which a dicing area for forming a dicing groove that does not penetrate to the back surface on the street, a tape attaching area for attaching a protective tape to the surface on which the dicing groove is formed, and dicing the back surface of the semiconductor wafer. In the dicing area, the semiconductor wafer is supported on the transfer tray from the back side after the dicing groove is formed, and before the back surface is ground in the grinding area, the transfer tray is separated from the semiconductor wafer. Provided is a semiconductor wafer separation system characterized by being detached.

In the semiconductor wafer separation system, the transfer tray is separated from the semiconductor wafer in a grinding area, and the transfer tray is formed of an elastic pad made of a synthetic resin having a plurality of fine suction pockets formed on a surface thereof. Is reinforced by a hard plate.

The present invention also relates to a method of separating a semiconductor wafer into chips for each circuit, the semiconductor wafer having a plurality of circuits formed on the front surface partitioned by streets. A half-cut step for forming a dicing groove that does not penetrate, a transfer tray supporting step for supporting the back surface of the semiconductor wafer on which the dicing groove is formed on a transfer tray, and attaching a protective tape to the surface of the semiconductor wafer supported by the transfer tray A semiconductor device comprising at least a tape attaching step, a transfer tray detaching step of removing the transfer tray from the back surface of the semiconductor wafer, and a grinding step of grinding the back surface to expose dicing grooves on the back surface side and separating the chips into chips. A method for separating a wafer is provided.

According to the semiconductor wafer separation system and the separation method configured as described above, the semiconductor wafer W having the dicing groove formed on the front surface in the dicing region is transported to the tape attaching region from the rear surface side. Since the semiconductor wafer W is supported by the transport tray, it is not damaged even if the semiconductor wafer W is large.

In particular, when the transfer tray is separated from the semiconductor wafer in the grinding area, the semiconductor wafer can be transferred to the grinding area more safely without breaking.

Further, according to the present invention, there is provided a wafer cassette mounting portion on which a wafer cassette for housing a semiconductor wafer before forming a dicing groove is mounted, and a transfer tray for supporting the semiconductor wafer after forming the dicing groove from the back side. A transfer tray cassette mounting portion on which a transfer tray cassette to be mounted is mounted, a chuck table for holding a semiconductor wafer, and dicing groove forming means for forming a dicing groove on a surface of the semiconductor wafer held on the chuck table,
A semiconductor wafer before the dicing groove is formed from the wafer cassette is unloaded to the temporary storage area, and the semiconductor wafer after the dicing groove is formed is transferred from the temporary storage area to the wafer cassette. Transporting the semiconductor wafer to the chuck table and transporting the semiconductor wafer after the dicing groove is formed to the temporary storage area, and second transporting to temporarily hold the semiconductor wafer after the dicing groove is formed. Means, and at least a transport tray transport means for transporting the transport tray from the transport tray cassette and transporting the transport tray to the chuck table, holding the semiconductor wafer after the dicing groove formation by the second transport means and raising the semiconductor wafer. The transport tray is unloaded from the transport tray cassette by the transport tray The semiconductor wafer after the dicing groove is formed is pressed onto the transfer tray mounted on the chuck table by lowering the second transfer means, and the transfer tray and the semiconductor wafer after the dicing groove are formed. A dicing apparatus is provided, wherein the semiconductor wafer after the dicing groove formed integrally with the transfer tray is transferred to a temporary storage area by a first transfer means and loaded into a wafer cassette by a loading / unloading means. .

In the dicing apparatus configured as described above, not only dicing grooves can be formed on the surface of the semiconductor wafer, but also integration with the transfer tray can be performed.

[0016]

An embodiment of the present invention will be described with reference to the drawings. As shown in FIG. 1, a semiconductor wafer separation system 10 according to the present invention includes a dicing area 11, a tape sticking area 12, and a grinding area 13. Then, using this semiconductor wafer separation system 10, the semiconductor wafer is separated into individual chips according to the procedure of the flowchart shown in FIG.

In the dicing region 11, a relatively shallow dicing groove which does not penetrate to the back surface is formed in the front surface of the semiconductor wafer using, for example, a dicing apparatus 20 shown in FIG. Here, as shown in FIG.
There are streets S in a grid pattern at a predetermined interval on the surface of the, and a circuit pattern is applied to a large number of rectangular areas C defined by the streets S.

The dicing apparatus 20 shown in FIG. 3 includes a transport tray cassette mounting portion 21 on which a transport tray cassette 32 for accommodating a transport tray used for transporting a semiconductor wafer having a dicing groove formed thereon is provided. Cassette mounting part 22 on which the wafer cassette 31 is mounted.
Tray transport means 23 for transporting the transport tray
A loading / unloading means 24 for loading / unloading semiconductor wafers from / to the first wafer cassette 31 and a chuck table 25 for sucking and holding the semiconductor wafers; A first transfer means 26 for transferring the semiconductor wafer unloaded from the cassette 31 to the chuck table 25, an alignment means 27 for detecting a street on which dicing grooves are to be formed on the surface of the semiconductor wafer held on the chuck table 25, Dicing groove forming means 28 for forming dicing grooves on the surface of the wafer, and cleaning means 29 for cleaning the semiconductor wafer after the dicing grooves are formed
Cleaning means 2 for cleaning the semiconductor wafer after dicing groove formation.
9 and a second transporting means 30 for transporting the sheet to the transfer section 9.

The semiconductor wafer on which the dicing groove is to be formed is accommodated in the first wafer cassette 31 and placed on the wafer cassette placing section 22. On the other hand, the transport tray used for transporting the semiconductor wafer is accommodated in the transport tray cassette 32 and placed on the transport tray cassette mounting portion 21.

First, the semiconductor wafer before the dicing groove is formed is taken out of the first wafer cassette 31 by the carrying-in / out means 24 and placed in the temporary storage area 22a. Then, the semiconductor wafer placed on the temporary placement area 22a is sucked by the first transfer means 26 and transferred to the chuck table 25, where it is sucked and held.

The chuck table 25 holding the semiconductor wafer W by suction is moved in the + X direction and positioned immediately below the alignment means 27, and the street on which the dicing groove is to be formed is detected. Then, after the street is detected, the chuck table 27 is further moved in the + X direction, so that a dicing groove is formed in the detected street under the action of the dicing groove forming means 28.

The dicing groove forming means 28 is, for example, as shown in FIG.
As shown in FIG. 5, a rotary blade 35 is mounted on a spindle 34 rotatably supported by a spindle housing 33, and cutting water supply nozzles 36 (only one is shown in FIG. 5) are provided on both sides thereof. The dicing groove is formed by cutting a predetermined depth into the semiconductor wafer W which is movable in the Y-axis direction and the Z-axis direction and moves in the X-axis direction while rotating at a high speed.

Further, by performing similar cutting while indexing and feeding the dicing groove forming means 28 in the + Y direction at street intervals, dicing grooves 37 which do not penetrate to the back surface are formed in all the streets in the same direction.

Further, by turning the chuck table 25 by 90 degrees and performing the same cutting as described above, dicing grooves 37 are formed vertically and horizontally on all the streets as shown in FIG. 6 (half cut step S1). ).

Next, the chuck table 25 moves in the −X direction and returns to the original position (wafer attaching / detaching area) shown in FIG. 3, and the second transfer means 30 moves in the + Y direction to move the suction section 3.
The semiconductor wafer W on which the dicing groove 37 is formed is suctioned by the lowering of the suction portion 30a, and in this state, the suction portion 30
a is raised to a predetermined height.

While the semiconductor wafer W is being lifted by the suction unit 30a, the transfer tray transfer means 23 takes out the transfer tray from the transfer tray cassette 32 and places it on the chuck table 25.

Here, the transport tray transport means 23 comprises a bent arm 23a, a fork portion 23b for sucking and holding the transport tray, and a rotary drive portion 23c for rotating the fork portion 23b with the advance / retreat direction as a rotation axis. Has been
When a transport tray 40 described later shown in FIGS. 7 and 8 is housed in the transport tray cassette 32 with the elastic pad 42 facing upward, the fork 23b is rotated by 180 degrees to attract the elastic pad 42 from above. Then, it is carried out, transported to the chuck table 25 and placed as it is. On the other hand, when the transport tray 40 is accommodated in the transport tray cassette 32 with the elastic pad 42 facing down, the elastic pad 42 is sucked from the lower side and carried out without rotating the fork portion 23b. The part 23b is rotated by 180 degrees and then placed on the chuck table 25. That is, in any case, the elastic pad 42 is placed and held on the chuck table 25 with the elastic pad 42 facing upward. Then, the suction portion 30a of the second transfer means 30 is lowered to move the semiconductor wafer W
To the transfer tray 40.

As shown in FIG. 7, the transport tray 40 has a hard plate 41 and an elastic pad 42 integrated with each other. As shown in FIG.
Are provided with a plurality of holes 43. On the other hand, the elastic pad 42 is formed of an elastic member such as a synthetic resin, for example. As shown in FIG. 9, a myriad of fine suction pockets 44 are formed on the surface.
A through hole 45 penetrating from the front surface to the back surface is provided.

The back surface of the semiconductor wafer W is placed on the elastic pad 42.
When pressed against the surface, the suction pocket portion 44 is crushed.
When the pressing is released, a negative pressure is generated in the suction pocket portion 44 due to the restoring force and adhesion due to the elasticity of the elastic pad 42, and this negative pressure becomes a suction force to suck the back surface of the semiconductor wafer W, and FIG. As described above, the elastic pad 42 and the semiconductor wafer W come into close contact with each other to be integrated, and this suction force does not weaken over time. Furthermore, the through hole 45
Is also supplied with the suction force from the chuck table 25 through the hole 43 of the hard plate 41, so that the semiconductor wafer W is also suctioned to the elastic pad 42 by this suction force (transport tray support step S2).

As described above, the semiconductor wafer W after the dicing groove 37 formed integrally with the transfer tray 40 by pressure bonding as shown in FIG. 10 is cleaned by the second transfer means 30 shown in FIG. After the surface is cleaned here, the wafer is transported to the temporary storage area 22a by the first transport unit 26.

Then, the semiconductor wafer W after the formation of the dicing groove placed in the temporary placing area 22a is transferred to the transfer tray 4
The first wafer cassette 31 is housed in the first wafer cassette 31 by the carrying-in / out means 24 while being integrated with the first wafer cassette 31.

First, as described above, the dicing grooves are formed on all the semiconductor wafers housed in the first wafer cassette 31 and integrated with the transfer tray 40 as described above. All of them are housed in the first wafer cassette 31 in a state of being formed and integrated with the transport tray 40.

As described above, in the dicing apparatus 20, not only the dicing grooves 37 can be formed on the surface of the semiconductor wafer W, but also the integration with the transport tray 40 can be performed. Can be efficiently prepared, and the transport tray 40
No special device is required for integration with the device.

The first wafer cassette 31 containing the semiconductor wafers W integrated with the transfer tray 40 as shown in FIG. 10 is then transferred to the tape application area 12. In the tape bonding region 12, a protective tape is bonded to the surface of the semiconductor wafer W on which the dicing grooves are formed, for example, using a tape bonding device 50 illustrated in FIG.

The tape sticking device 50 is provided with a first cassette cassette on which the first wafer cassette 31 containing the semiconductor wafers W carried from the dicing area 11 while being supported by the carrying tray 40 is placed. Mounting area 51, a second cassette mounting area 53 in which a second wafer cassette 52 in which the semiconductor wafer after the protective tape is attached is mounted, and a support from the first wafer cassette 31 to the transfer tray 40. The loading / unloading means 54 for unloading the semiconductor wafer W and loading the semiconductor wafer W after the protective tape is attached to the second wafer cassette 52, and the semiconductor wafer W before and after the protective tape is attached. A transporting means 55 for transporting, a chuck table 56 capable of vertically moving while holding the semiconductor wafer W integrated with the transport tray 40, Tape applying means 5 for attaching a protective tape on the surface of the semiconductor wafer W held on Buru 56
7, and is generally constituted.

The semiconductor wafers W formed with the dicing grooves 37 integrated with the transfer tray 40 and housed in the first wafer cassette 31 are transferred to the temporary storage area 58 by the loading / unloading means 54, from which the chucking means 55 transfers the wafers. The sheet is conveyed to and held on the table 56.

As shown in FIG. 12, the tape attaching means 57 includes a roller 59a for feeding out the protective tape 63,
59b, a vertically movable and rotatable vertically movable portion 60, and a pressure roller 61 and a cutter 62 attached to the lower portion of the vertically movable portion 60.

The protective tape 63 is tensioned between the rollers 59a and 59b so that the adhesive surface faces down, and the semiconductor wafer is integrated with the transport tray 40 on the chuck table 56. When W is held, the chuck table 56 rises, and the vertically moving unit 60 rotates and descends,
As shown in FIG. 13, the protective tape 63 is adhered to the surface of the semiconductor wafer W by the rotating pressure roller 61,
Further, the cutter 62 on which the attached protective tape 63 rotates.
The surface of the semiconductor wafer W is protected by the protective tape 63 as shown in FIG.

Next, the semiconductor wafer W integrated with the transfer tray 40 and having the protective tape 63 adhered to the surface thereof is transferred to the temporary storage area 58 by the transfer means 55, and the second wafer cassette is transferred by the transfer means 54. 52 (tape attaching step S3).

As described above, all the semiconductor wafers W are stored in the second wafer cassette 52 in the transfer tray 40.
And is housed in a state where the protective tape 63 is adhered to the surface.

Incidentally, the protective tape 63 is applied to the semiconductor wafer W.
When the sheet is adhered, the strength becomes relatively high. Therefore, the transfer tray 40 and the semiconductor wafer W may be separated in the temporary placing area 58. For example, the mounting table 58 in the temporary storage area 58
a is provided with means for applying heat to the transport tray 40, and if heat is applied to the transport tray 40 after the protection tape 63 is attached, the gas inside the suction pocket portion 44 shown in FIG. The contact state between the elastic pad 42 and the semiconductor wafer W is released, and the semiconductor wafer W can be easily separated.

When the semiconductor wafer W is sucked by the transfer means 55 in a state where the close contact state is released, the semiconductor wafer W can be easily detached from the transfer tray 40. And
While the semiconductor wafer W is being held by the transfer unit 55, the transfer tray 40 remaining in the temporary storage area 57 is stored in the second wafer cassette 52 by the transfer unit 54.

On the other hand, the detached semiconductor wafer W can be placed in the temporary storage area 58 and stored in a predetermined position of the first wafer cassette 31 by the loading / unloading means 54.

The semiconductor wafer W having the dicing groove 37 formed on the surface and the protective tape 63 adhered thereto is then transported to the grinding area 13. Hereinafter, the transport tray 40 and the semiconductor wafer W are not separated from each other in the tape attaching region 12, and the semiconductor wafer W is transferred to the second wafer cassette 52 in a state where the protective tape 63 is attached and integrated with the transport tray 40. The case where the sheet is accommodated and transported will be described.

In the grinding region 13, the back surface of the semiconductor wafer W is ground using, for example, a grinding device 70 shown in FIG. The grinding device 70 includes a cassette mounting area 71 on which the second wafer cassette 52 conveyed from the tape attaching area 12 is mounted, and an unloading operation for unloading the semiconductor wafer W from the second wafer cassette 52. Entry means 72
A temporary storage area 73 for positioning the semiconductor wafer unloaded by the loading / unloading means 72, and chuck tables 74a, 74b for holding the semiconductor wafer to be ground.
74c, 74d, a turntable 75 rotatably supporting the chuck tables 74a to 74d, a first grinding unit 76 and a second grinding unit 77 for grinding a semiconductor wafer held on the chuck tables 74a to 74d. ,
Cleaning means 78 for cleaning the semiconductor wafer after grinding;
The first transport unit 79 transports to the cleaning units 78 from the chuck tables 74a to 74d.

The first grinding means 76 is supported by a support portion 81 which is guided by a guide rail 79 disposed in a direction perpendicular to the wall portion 78 and moves up and down by driving of a driving source 80. It is configured to move up and down with movement. In the first grinding means 76, a grinding wheel 84 is mounted on a tip of a rotatably supported spindle 82 via a mounter 83, and a grinding wheel 85 for rough grinding is fixed below the grinding wheel 84. Have been.

On the other hand, the second grinding means 77 is supported by a support portion 88 which is guided by a guide rail 86 disposed in a vertical direction on the wall portion 78 and moves up and down by driving of a drive source 87. It moves up and down with the up and down movement of. In the second grinding means 77, a grinding wheel 91 is mounted via a mounter 90 at the tip of a spindle 89 rotatably supported.
A grinding wheel 92 for finish grinding is fixed to the lower part of the workpiece.

The semiconductor wafer W accommodated in the second wafer cassette 52 in a state of being integrated with the transport tray 40 and having the protective tape 63 adhered to the surface is carried out by the carrying-in / out means 72 and turned upside down. Then, the protective tape 63 is placed in the temporary placing area 73 with the front side thereof attached, that is, the transport tray 40 side up. Then, after being positioned at a fixed position in the temporary placing area 73, the sheet is transported to the chuck table 74a by the first transporting means 79 and held as shown in FIG.

Since the semiconductor wafer W held on the chuck table 74a is integrated with the transfer tray 40, the transfer tray 40 is separated from the semiconductor wafer W before rotating the turntable 75.

For example, if the suction surface of the first transfer means 79 is heated or hot air is blown from the suction surface, the gas inside the suction pocket portion 44 shown in FIG. Expands, so that the close contact between the transport tray 40 and the semiconductor wafer W is released.
In this state, the transport tray 40 is
Only the suction tray is sucked and the sucked transport tray 40 is temporarily placed in the area 7.
Place on 3. The transport tray 40 placed in the temporary storage area 73 is accommodated in the second wafer cassette 52 by the loading / unloading means 72 (transport tray separation step S4).

When the transfer tray 40 is stored in the second wafer cassette 52 in this manner, the semiconductor wafer W
As shown in FIG. 17, the protection tape 63 attached to the front surface is held on the chuck table 74a with the protection tape 63 facing down and the back surface facing up.

When the transport tray 40 has already been separated from the semiconductor wafer W in the tape attaching device 50, the step of removing the transport tray and storing it in the second wafer cassette 52 as described above is unnecessary. It is.

The semiconductor wafer W left on the chuck table 74a with the back side facing up is rotated by a predetermined angle (90 degrees in the illustrated example) by turning the turntable 75 counterclockwise. It is positioned at the position 74d, that is, immediately below the first grinding means 76. Then, the back surface is ground by the rotating grinding wheel 85 for rough grinding. At this time, the chuck table 7
The chuck table 74b is automatically positioned at the position where 4a was located.

As shown in FIG. 18, a dicing groove 37 is formed on the front surface of the semiconductor wafer W. Therefore, as shown in FIG. Are exposed on the back side and separated into individual chips C (grinding step S5).

After being separated into the individual chips C, the individual chips held by the chuck table 74a are rotated by the counterclockwise rotation of the turntable 75 to move the individual chips to the position of the chuck table 74c in FIG. Means 7
7 is located immediately below. Then, the back surface is finish-ground by the rotating grinding wheel 92 for finish grinding.
In the rough grinding, the grinding may be finished before reaching the dicing groove 37, and the finish grinding may be performed until the chips are separated into chips.

The chip thus formed is conveyed to the cleaning means 78 by the second conveying means 80 while being adhered to the protective tape 63, and is conveyed to the next tape changing step after cleaning.

As described above, when all the semiconductor wafers contained in the second wafer cassette 52 conveyed from the tape attaching area 12 are separated by grinding the back surface, the semiconductor wafers are held on the protective tape 63. In this state, the chips are separated into individual chips and transported to the next tape changing step.

As described above, when the semiconductor wafer W having the dicing grooves 37 formed on the front surface in the dicing region 11 is transferred to the tape attaching region 12, the semiconductor wafer W is supported by the transfer tray 40 from the back surface side. Therefore, even if the semiconductor wafer W is large, it is not damaged.

Further, from the tape attaching area 12 to the grinding area 1
3, the protective tape 63 is adhered to the surface of the semiconductor wafer W. Therefore, even if the transport tray 40 is detached from the semiconductor wafer W in the tape affixing area 12, the transporting to the grinding area 13 takes place. It is considered that the possibility that the semiconductor wafer W is damaged in the first place is small.
The transport tray 40 is not separated from the transport tray 4 in FIG.
In a state where the semiconductor wafer W is supported by
, The risk of damage is further reduced.

[0060]

As described above, according to the system and method for separating a semiconductor wafer according to the present invention, after forming a dicing groove that does not penetrate to the front surface of the semiconductor wafer in the dicing region, Since it is supported by the transport tray from the back side and transported to the tape application area or grinding area in that state,
Pre-dicing can be performed safely and smoothly without being damaged during transportation. In particular, in the case of a large semiconductor wafer, breakage such as cracking can be effectively prevented.

Further, by attaching the protective tape to the surface where the dicing grooves are formed in the tape attaching area, the semiconductor tape is reinforced by the protective tape thereafter. The risk of damage from removal of the transport tray is reduced.

However, if the semiconductor wafer is transported to the grinding area while being supported by the transport tray and the transport tray is removed in the grinding area, the risk of breakage is further reduced, and the transport is performed more safely. be able to.

Further, according to the dicing apparatus according to the present invention, not only the dicing grooves can be formed on the surface of the semiconductor wafer W, but also the integration with the transfer tray can be performed. Preparation can be performed efficiently, and no special device is required for integration with the transport tray.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a configuration of a semiconductor wafer separation system according to the present invention.

FIG. 2 is a flowchart illustrating a method for separating a semiconductor wafer according to the present invention.

FIG. 3 is a perspective view showing an example of a dicing apparatus according to the present invention.

FIG. 4 is a perspective view showing a semiconductor wafer separated into individual chips.

FIG. 5 is a perspective view showing an example of a dicing groove forming means constituting the dicing apparatus according to the present invention.

FIG. 6 is a perspective view showing a semiconductor wafer after a dicing groove is formed.

FIG. 7 is a perspective view showing a transport tray.

FIG. 8 is an exploded perspective view of the transport tray.

FIG. 9 is a cross-sectional view showing an elastic pad constituting the transport tray.

FIG. 10 is a perspective view showing a state where the semiconductor wafer after the dicing groove is formed is pressure-bonded to the transport tray.

FIG. 11 is a perspective view showing an example of a tape sticking apparatus used in a tape sticking area constituting the semiconductor wafer separation system according to the present invention.

FIG. 12 is a front view showing a tape sticking means constituting the tape sticking apparatus.

FIG. 13 is a front view showing a state in which a protective tape is attached to the surface of the semiconductor wafer by the tape attaching means.

FIG. 14 is a perspective view showing a semiconductor wafer having a back surface pressed against a transport tray and a protective tape adhered to the front surface.

FIG. 15 is a perspective view showing an example of a grinding apparatus used in a grinding area constituting the semiconductor wafer separation system according to the present invention.

FIG. 16 is a perspective view showing a state in which a semiconductor wafer pressed on a transfer tray is held on a chuck table constituting the grinding apparatus.

FIG. 17 is a perspective view showing a state after the transfer tray is detached from the semiconductor wafer crimped on the transfer tray.

FIG. 18 is a perspective view showing a state of grinding the back surface of the semiconductor wafer.

FIG. 19 is a perspective view showing a semiconductor wafer in which dicing grooves are exposed on the back surface by the grinding.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Semiconductor wafer separation system 11 ... Dicing area 2 ... Tape sticking area 13 ... Grinding area 20 ... Dicing device 21 ... Transport tray cassette mounting section 22 ... Wafer cassette mounting section 22a ... Temporary mounting area 23 ... Transport tray transport Means 24
... Loading and unloading means 25... Chuck table 26.
Alignment means 28 Dicing groove forming means 29 Cleaning means 30
Second transfer means 30a ... Suction unit 31 ... First wafer cassette 32
... Transport tray cassette 33 ... Spindle housing 34 ... Spindle 35
... Rotating blade 36 ... Cutting water supply nozzle 37 ... Dicing groove 40 ...
Carry tray 41 ... Hard plate 42 ... Elastic pad 43 ... Hole
44 suction pocket part 45 through hole 50 tape attaching device 51 first cassette mounting area 52 second wafer cassette 53 second cassette mounting area 54 loading / unloading means 55 transporting means 56 ... Chuck table 57 ... Tape attaching means 58 ... Temporary placing area 58a ... Placement table 59a, 59b ... Roller 60 ... Vertical moving part 61 ... Crimping roller 62 ... Cutter 63 ... Protective tape 70 ... Grinding device
Reference numeral 71: Cassette mounting area 72: Loading / unloading means 73: Temporary storage area 74a, 74b, 74c, 74d: Chuck table 75: Turn table 76: First grinding means 77:
Second grinding means 78 Cleaning means 79 First transport means 80 Second transport means 81, 88 Support parts 82, 89 Spindle 83
90: Mounter 84, 91: Grinding wheel 85, 92: Grinding wheel

 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Koichi Yajima 2-14-3 Higashi-Kojiya, Ota-ku, Tokyo F-term (reference) 5F031 CA02 DA13 DA15 FA01 FA07 FA11 FA12 FA15 GA43 MA34 MA37 MA38

Claims (5)

[Claims] 1. A semiconductor wafer separation system for separating a semiconductor wafer having a plurality of circuits formed on a front surface thereof partitioned by a street into chips for each circuit, wherein a dicing groove which does not penetrate to the back surface of the street is provided. A dicing region to be formed, a tape attachment region for attaching a protective tape to the surface on which the dicing groove is formed, and a grinding region for grinding the back surface of the semiconductor wafer until the dicing groove is exposed, In the dicing area, the semiconductor wafer is supported by the transfer tray from the back side after the dicing groove is formed, and the transfer tray is detached from the semiconductor wafer before grinding the back side in the grinding area. Semiconductor wafer separation system. 2. The semiconductor wafer separation system according to claim 1, wherein the transfer tray is separated from the semiconductor wafer in a grinding area. 3. The semiconductor wafer separation device according to claim 1, wherein the transport tray is configured by reinforcing an elastic pad made of a synthetic resin having a plurality of fine suction pockets formed on a surface thereof with a hard plate. system. 4. A method of separating a semiconductor wafer into a plurality of circuits formed on a front surface of a semiconductor wafer, the plurality of circuits being separated by streets, wherein the semiconductor wafer is separated into chips for each circuit. A half-cutting step of forming a groove, a transfer tray supporting step of supporting a back surface of the semiconductor wafer on which the dicing groove is formed by a transfer tray, and attaching a protective tape to a surface of the semiconductor wafer supported by the transfer tray. A tape attaching step, a transfer tray detaching step of removing a transfer tray from the back surface of the semiconductor wafer, and a grinding step of grinding the back surface to expose the dicing groove on the back surface side and separating into chips. Semiconductor wafer separation method. 5. A transfer for accommodating a wafer cassette mounting portion on which a wafer cassette for housing a semiconductor wafer before forming a dicing groove is mounted, and a transfer tray for supporting the semiconductor wafer after forming the dicing groove from the back side. A transport tray cassette mounting portion on which a tray cassette is mounted, a chuck table for holding a semiconductor wafer, dicing groove forming means for forming a dicing groove on a surface of the semiconductor wafer held on the chuck table, and the wafer cassette And a carrying-in / out means for carrying out the semiconductor wafer before the dicing groove formation from the temporary storage region to the temporary storage region, and carrying the semiconductor wafer after the dicing groove formation from the temporary storage region into the wafer cassette from the temporary storage region. Transporting the semiconductor wafer placed on the chuck table to the chuck table, A first transfer means for transferring the semiconductor wafer after the formation of the dicing groove to the temporary storage area; a second transfer means for temporarily holding the semiconductor wafer after the formation of the dicing groove; and the transfer tray from the transfer tray cassette. And a transport tray transport unit for transporting the semiconductor wafer to the chuck table and holding the semiconductor wafer having the dicing groove formed thereon by the second transport unit and raising the semiconductor wafer. The transport tray is unloaded from the transport tray cassette, placed on the chuck table, and the semiconductor wafer after the dicing groove is formed on the transport tray placed on the chuck table by lowering the second transport unit. The transfer tray is integrated with the semiconductor wafer after the dicing groove is formed by crimping, and a die integrated with the transfer tray is formed. Transporting the semiconductor wafer after single groove formed in the provisional placing region by said first conveying means, a dicing apparatus characterized by loading to the wafer cassette by 該搬 and out means.