TW201415547A - Wafer processing method - Google Patents
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- TW201415547A TW201415547A TW102130578A TW102130578A TW201415547A TW 201415547 A TW201415547 A TW 201415547A TW 102130578 A TW102130578 A TW 102130578A TW 102130578 A TW102130578 A TW 102130578A TW 201415547 A TW201415547 A TW 201415547A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
Description
本發明是有關於一種將半導體晶圓或光學元件晶圓分割成各個晶片的晶圓加工方法。 The present invention relates to a wafer processing method for dividing a semiconductor wafer or an optical element wafer into individual wafers.
習知，作為將晶圓分割成各個晶片之加工方法，眾所矚目的有利用雷射加工來分割晶圓之技術。作為該雷射加工，提案有照射對於晶圓具有透過性之雷射光線來在晶圓內部形成脆弱之層(改質層)，以該強度降低之改質層為分割起點的加工方法(例如，參照專利文獻1)。專利文獻1之加工方法中，沿著晶圓表面之格子狀街道來照射雷射光線，在晶圓內部形成直線狀改質層。且，藉由對脆弱之改質層施加外力，沿著改質層將晶圓分割成各個晶片。 Conventionally, as a processing method for dividing a wafer into individual wafers, a technique of dividing a wafer by laser processing has been attracting attention. As the laser processing, there is proposed a processing method in which a laser beam having transparency is irradiated to form a fragile layer (modified layer) inside the wafer, and the modified layer having the reduced strength is used as a starting point of the division (for example, Refer to Patent Document 1). In the processing method of Patent Document 1, laser light is irradiated along a lattice-like street on the surface of the wafer, and a linear modified layer is formed inside the wafer. Further, the wafer is divided into individual wafers along the reforming layer by applying an external force to the weak modified layer.
然而，當晶圓厚度薄到數十μm以下時，雷射光線會透過晶圓，要在晶圓內部之適切位置形成適切之改質層便變得相當困難。因此，提案有在薄化前之晶圓內部形成改質層，在改質層形成後研磨到精修厚度之加工方法(例如，參照專利文獻2)。專利文獻2之加工方法中，在比精修 厚度更高之位置的被研磨面側來形成改質層。藉此，可在晶圓內部之適切位置形成適切之改質層，亦可除去改質層，故，在光學元件晶圓加工時可提升輝度，並在半導體晶圓加工時可提升橫向強度。 However, when the thickness of the wafer is as thin as several tens of μm or less, the laser light passes through the wafer, and it becomes quite difficult to form a suitable modified layer at a suitable position inside the wafer. Therefore, there has been proposed a method of forming a modified layer inside a wafer before thinning, and polishing it to a finishing thickness after formation of the modified layer (for example, refer to Patent Document 2). In the processing method of Patent Document 2, the ratio is refined The modified layer is formed on the side of the surface to be polished at a position higher in thickness. Thereby, the appropriate modified layer can be formed at the appropriate position inside the wafer, and the modified layer can be removed. Therefore, the brightness can be improved during the processing of the optical element wafer, and the lateral strength can be improved during the processing of the semiconductor wafer.
[專利文獻1]日本專利第3408805號公報 [Patent Document 1] Japanese Patent No. 3408805
[專利文獻2]日本特開2012-49164號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2012-49164
然而，常有在晶圓背面側為了防止金屬污染形成氮化膜或氧化膜等之絶緣膜的情形，研磨前之雷射加工中，因絶緣膜之影響會無法在晶圓內部形成適切之改質層。此時，亦會考慮在改質層形成前利用研磨加工從晶圓背面除去絶緣膜之方法。除去該絶緣膜時，為了防止砥石阻塞，需要依照粗研磨、精修研磨、研磨之順序來進行加工，由於改質層形成後之晶圓薄化時亦需要同樣的加工，因此會有加工時間增加之問題。 However, in the case of forming an insulating film such as a nitride film or an oxide film on the back side of the wafer to prevent metal contamination, in the laser processing before polishing, it is impossible to form an appropriate change in the wafer due to the influence of the insulating film. Quality layer. At this time, a method of removing the insulating film from the back surface of the wafer by polishing before the formation of the modified layer is also considered. When removing the insulating film, in order to prevent clogging of the vermiculite, it is necessary to perform processing in the order of rough polishing, finishing polishing, and polishing. Since the wafer is thinned after formation of the modified layer, the same processing is required, and thus processing time is required. Increase the problem.
本發明為有鑑於此點而成者，目的在於提供一種對於在背面形成有絶緣膜之晶圓，可用短時間在適切位置形成適切之改質層的晶圓加工方法。 The present invention has been made in view of the above, and it is an object of the invention to provide a wafer processing method in which a suitable modified layer can be formed at a suitable position for a wafer having an insulating film formed on the back surface in a short time.
本發明之晶圓加工方法其是在表面由分割預定 線所區劃之複數區域形成元件並在背面形成有絶緣膜之晶圓的加工方法，其特徵在於具有以下步驟：絶緣膜除去步驟，從晶圓背面側沿著該分割預定線，利用切割刀來形成具有平坦之溝底的切割溝，並沿著該分割預定線來除去絶緣膜；改質層形成步驟，在實施該絶緣膜除去步驟之後，從晶圓背面以該切割溝為基準來執行校正，並將對於晶圓具有透過性之波長的雷射光線聚光點從該切割溝朝晶圓表面附近之內部來定位且沿著該切割溝照射，在晶圓表面附近之內部形成改質層；及分割步驟，在實施該改質層形成步驟之後，從晶圓背面利用研磨機構來研磨，朝精修厚度來薄化，並利用研磨動作，以該改質層為起點沿著該分割預定線分割晶圓；又，該切割溝之該平坦溝底的表面粗度為0.1μm以下，該平坦溝底之寬度具有形成於該溝底之雷射點徑以上的寬度。 The wafer processing method of the present invention is that the surface is divided by a predetermined A method of processing a wafer in which a plurality of regions are formed in a plurality of regions and in which an insulating film is formed on the back surface, characterized in that the insulating film removal step is performed from the back surface side of the wafer along the predetermined dividing line by a dicing blade Forming a dicing groove having a flat groove bottom, and removing the insulating film along the dividing line; the reforming layer forming step, after performing the insulating film removing step, performing correction from the wafer back surface based on the dicing groove And concentrating a laser light concentrating point having a wavelength of transparency to the wafer from the dicing groove toward the inside of the wafer surface and irradiating along the dicing groove to form a modified layer inside the wafer surface And the dividing step, after performing the reforming layer forming step, polishing is performed from the back surface of the wafer by a polishing mechanism, thinned toward the finishing thickness, and the polishing operation is used to start the division along the modified layer The line dividing the wafer; further, the surface of the flat groove has a surface roughness of 0.1 μm or less, and the width of the flat groove bottom has a width formed above a laser spot diameter of the groove bottom.
根據該構成，藉由利用切割刀從晶圓背面將絶緣膜沿著分割預定線除去，來在晶圓背面形成具有平坦溝底的切割溝。又，藉由通過切割溝來照射雷射光線，便不會受到絶緣膜之影響，便可在晶圓內部形成改質層。此時，切割溝之表面粗度為0.1μm以下，溝底寬度則具有雷射點徑以上之寬度，故，可抑制溝底之雷射光線之漫射。藉此，可在晶圓內部之適切位置形成適切之改質層，將晶圓沿著分割預定線良好地分割。又，由於利用切割刀從晶圓背面將絶緣膜部分地除去，因此與利用研磨加工從晶圓背面全體除去絶緣膜的構成相比，可縮短加工時間。 According to this configuration, the insulating film is removed from the back surface of the wafer by the dicing blade along the dividing line, and a dicing groove having a flat groove bottom is formed on the back surface of the wafer. Further, by irradiating the laser light through the dicing groove, the reforming layer can be formed inside the wafer without being affected by the insulating film. At this time, the surface roughness of the dicing groove is 0.1 μm or less, and the width of the groove bottom has a width equal to or larger than the laser spot diameter, so that the diffusion of the laser light at the bottom of the groove can be suppressed. Thereby, an appropriate modified layer can be formed at an appropriate position inside the wafer, and the wafer can be well divided along the planned dividing line. Moreover, since the insulating film is partially removed from the back surface of the wafer by the dicing blade, the processing time can be shortened as compared with the configuration in which the insulating film is removed from the entire wafer back surface by polishing.
根據本發明，可在晶圓背面利用切割刀來形成平坦且表面粗度較小之切割溝，並透過切割溝對晶圓內部照射雷射光線，藉此對於在背面形成有絶緣膜之晶圓，用短時間在適切位置形成適切之改質層。 According to the present invention, a dicing blade which is flat and has a small surface roughness can be formed on the back surface of the wafer, and the inside of the wafer is irradiated with laser light through the dicing groove, thereby forming a wafer having an insulating film formed on the back surface. , in a short time to form a suitable modified layer in the appropriate position.
11‧‧‧元件 11‧‧‧ components
12‧‧‧晶圓表面 12‧‧‧ Wafer surface
13‧‧‧晶圓背面 13‧‧‧ wafer back
14‧‧‧分割預定線 14‧‧‧Division line
15‧‧‧絶緣膜 15‧‧‧Insulation film
16‧‧‧刻痕 16‧‧‧ Scotch
17‧‧‧保護膠帶 17‧‧‧Protection tape
21、31、41‧‧‧卡盤 21, 31, 41‧‧‧ chucks
22‧‧‧切割刀 22‧‧‧Cutting knife
25‧‧‧切割溝 25‧‧‧Cutting trench
26‧‧‧溝底 26‧‧ ‧ bottom
32‧‧‧加工頭 32‧‧‧Processing head
35‧‧‧改質層 35‧‧‧Modified layer
42‧‧‧研磨機構 42‧‧‧ grinding mechanism
43‧‧‧研磨輪 43‧‧‧ grinding wheel
C‧‧‧元件晶片 C‧‧‧Component wafer
L‧‧‧精修厚度 L‧‧‧ intensive thickness
Ra‧‧‧表面粗度 Ra‧‧‧ surface roughness
W‧‧‧晶圓 W‧‧‧ wafer
圖1A、B是顯示實施形態之絶緣膜除去步驟之一例的圖。 Figs. 1A and 1B are views showing an example of an insulating film removing step in the embodiment.
圖2是顯示實施形態之改質層形成步驟之一例的圖。 Fig. 2 is a view showing an example of a procedure for forming a modified layer in the embodiment.
圖3A、B是顯示實施形態之分割步驟之一例的圖。 3A and 3B are views showing an example of a dividing step in the embodiment.
以下，針對本實施形態之晶圓加工方法來說明。本實施形態之晶圓加工方法是對於在背面形成有絶緣膜之晶圓，實施根據切割裝置之絶緣膜除去步驟、根據雷射加工裝置之改質層形成步驟、及根據研磨裝置之分割步驟。絶緣膜除去步驟中，將在晶圓背面所形成之絶緣膜利用切割刀沿著分割預定線除去。利用根據該切割刀之切割加工，在晶圓背面沿著分割預定線形成具有平坦且表面粗度較小之溝底的切割溝。 Hereinafter, the wafer processing method of the present embodiment will be described. The wafer processing method according to the present embodiment is a step of removing an insulating film by a dicing apparatus, a step of forming a reforming layer by a laser processing apparatus, and a dividing step by a polishing apparatus for a wafer having an insulating film formed on the back surface. In the insulating film removing step, the insulating film formed on the back surface of the wafer is removed along the dividing line by a dicing blade. With the cutting process according to the dicing blade, a dicing groove having a flat bottom having a small surface roughness is formed along the dividing line on the back surface of the wafer.
改質層形成步驟中，利用雷射加工在晶圓內部沿著分割預定線來形成改質層。該雷射加工中，將對於晶圓具有透過性之波長的雷射光線聚光點從切割溝朝晶圓表面附近之內部來定位，並沿著切割溝照射雷射光線。藉此， 在絶緣膜不會阻礙雷射光線之照射，在晶圓內部可形成沿著分割預定線之改質層。分割步驟中，利用研磨機構將晶圓薄化到精修厚度的同時，並利用研磨動作，改質層會成為起點，並將晶圓沿著分割預定線來分割。 In the reforming layer forming step, the reforming layer is formed along the dividing line by the laser processing inside the wafer. In the laser processing, a laser light condensing point having a wavelength of transparency to the wafer is positioned from the dicing groove toward the inside of the wafer surface, and the laser beam is irradiated along the dicing groove. With this, The insulating film does not hinder the irradiation of the laser light, and a modified layer along the planned dividing line can be formed inside the wafer. In the dividing step, the polishing mechanism is used to thin the wafer to the finishing thickness, and the polishing layer is used as a starting point by the polishing operation, and the wafer is divided along the dividing line.
以下，針對本實施形態之晶圓加工方法的細節來說明。參照圖1，針對絶緣膜除去步驟來說明。圖1是顯示本實施形態之絶緣膜除去步驟之一例的圖。而，本實施形態中，構造成利用一次之切割加工來形成切割溝，但不限定於該構成。例如，根據晶圓材質等，可使用粒徑不同之切刀，分成數階段來形成切割溝。又，圖1A是顯示使晶圓背面朝上之狀態。 Hereinafter, details of the wafer processing method of the present embodiment will be described. The insulating film removal step will be described with reference to Fig. 1 . Fig. 1 is a view showing an example of an insulating film removing step of the embodiment. On the other hand, in the present embodiment, the cutting groove is formed by one-time cutting processing, but the configuration is not limited thereto. For example, depending on the material of the wafer or the like, a cutting blade having a different particle diameter can be used to form a cutting groove in several stages. Further, Fig. 1A shows a state in which the back side of the wafer faces upward.
如圖1A所示，晶圓W是在矽、砷化鎵等之半導體基板上配置多個元件11來構成。晶圓W形成為大致圓板狀，利用配列於表面12之格子狀分割預定線14來區劃成複數區域。在各區域，形成IC、LSI等之元件11。在晶圓W之背面13，為了防止因銅等侵入的金屬污染，形成有氮化膜或氧化膜等之絶緣膜15。又，在晶圓W外緣，形成有顯示結晶方位之刻痕16。 As shown in FIG. 1A, the wafer W is configured by arranging a plurality of elements 11 on a semiconductor substrate such as germanium or gallium arsenide. The wafer W is formed in a substantially disk shape, and is divided into a plurality of regions by a lattice-shaped dividing line 14 arranged on the surface 12. An element 11 such as an IC or an LSI is formed in each area. In order to prevent metal contamination by copper or the like on the back surface 13 of the wafer W, an insulating film 15 such as a nitride film or an oxide film is formed. Further, a score 16 showing a crystal orientation is formed on the outer edge of the wafer W.
而，晶圓W不限於半導體晶圓，絶緣膜15不限於防止金屬污染用之氮化膜或氧化膜等。晶圓W可為在陶瓷、玻璃、藍寶石系的無機材料基板形成有LED等之光學元件的光學元件晶圓。又，絶緣膜15可為在晶圓W背面13所形成者，例如用樹脂膜來構成。 Further, the wafer W is not limited to the semiconductor wafer, and the insulating film 15 is not limited to a nitride film or an oxide film for preventing metal contamination. The wafer W may be an optical element wafer in which an optical element such as an LED is formed on a ceramic, glass, or sapphire-based inorganic material substrate. Further, the insulating film 15 may be formed on the back surface 13 of the wafer W, and may be formed, for example, by a resin film.
圖1B所示，絶緣膜除去步驟中，在晶圓W之表面 12黏貼保護膠帶17，用使背面13朝向上方之狀態朝切割裝置(不圖示)搬入。朝切割裝置搬入之晶圓W透過保護膠帶17，保持於卡盤21。又，切割刀22定位於晶圓W之分割預定線14，利用高速旋轉之切割刀22，將晶圓W從背面13側切入。且，對於晶圓W，使切割刀22相對移動，藉此沿著分割預定線14從晶圓W之背面13除去絶緣膜15。 1B, in the insulating film removing step, on the surface of the wafer W The adhesive tape 17 is attached to the cutting device (not shown) with the back surface 13 facing upward. The wafer W carried into the cutting device is held by the chuck 21 through the protective tape 17. Further, the dicing blade 22 is positioned on the dividing line 14 of the wafer W, and the wafer W is cut from the back surface 13 side by the dicing blade 22 that rotates at a high speed. Further, with respect to the wafer W, the cutter blade 22 is relatively moved, whereby the insulating film 15 is removed from the back surface 13 of the wafer W along the division planned line 14.
藉此，在晶圓W之背面13形成具有平坦溝底26之切割溝25，並利用切割溝25使晶圓W之背面13從絶緣膜15朝外部露出。切割溝25會成為後段改質層形成步驟之雷射光線的照射區域。即，透過切割溝25，朝晶圓W內部照射雷射光線，藉此不會受到絶緣膜15之影響，沿著分割預定線14來形成改質層35(參照圖2)。此時，切割溝25之溝底26會形成為平坦且表面粗度Ra0.1μm以下而可防止雷射光線之漫射。 Thereby, the dicing groove 25 having the flat groove bottom 26 is formed on the back surface 13 of the wafer W, and the back surface 13 of the wafer W is exposed from the insulating film 15 to the outside by the dicing groove 25. The cutting groove 25 becomes an irradiation region of the laser beam in the step of forming the reforming layer in the latter stage. That is, the laser beam is irradiated to the inside of the wafer W through the dicing groove 25, whereby the reforming layer 35 is formed along the dividing line 14 without being affected by the insulating film 15 (see FIG. 2). At this time, the groove bottom 26 of the dicing groove 25 is formed flat and has a surface roughness Ra of 0.1 μm or less to prevent diffusion of the laser light.
在此，作為切割刀22，使用在前端具有平坦面，並具有在溝底26形成之雷射點徑以上之厚度的刀刃。又，切割溝25以表面粗度Ra為0.1μm以下之切割條件來加工。例如，作為切割刀22，使用厚度0.6mm，且將砥粒徑2.0μm~4.0μm之鑽石砥粒用樹脂固定之樹脂切刀，轉軸旋轉數為30000rpm，切割輸送速度(卡盤21之輸送速度)為1mm/s，切入量設定成距背面13為0.01mm。 Here, as the dicing blade 22, a blade having a flat surface at the tip end and having a thickness equal to or larger than the laser spot diameter formed by the groove bottom 26 is used. Further, the dicing groove 25 is processed by a cutting condition having a surface roughness Ra of 0.1 μm or less. For example, as the cutter blade 22, a resin cutter having a thickness of 0.6 mm and a diamond crucible having a crucible diameter of 2.0 μm to 4.0 μm fixed by a resin is used, and the number of rotations of the rotating shaft is 30,000 rpm, and the conveying speed of the cutting (the conveying speed of the chuck 21) is used. ) is 1 mm/s, and the amount of cut is set to be 0.01 mm from the back surface 13.
絶緣膜除去步驟中，使用切割刀22將雷射光線之照射區域即分割預定線14上的絶緣膜15除去。故，利用研磨加工，與從晶圓W背面13全體將絶緣膜15除去的構成比 較，可用短時間且有效率地除去絶緣膜15。而，切割溝25之溝底26並非完全的平坦，亦可包含有不會對改質層35之形成有所影響之程度的翹曲或凹凸形狀。即，切割溝25之溝底26只要形成為實質上看起來平坦之程度即可。 In the insulating film removing step, the insulating film 15 on the dividing line 14 which is the irradiation region of the laser beam is removed by using the dicing blade 22. Therefore, the composition ratio of the insulating film 15 is removed from the entire back surface 13 of the wafer W by the polishing process. In comparison, the insulating film 15 can be removed in a short time and efficiently. However, the groove bottom 26 of the cutting groove 25 is not completely flat, and may include a warpage or a concavo-convex shape that does not affect the formation of the reforming layer 35. That is, the groove bottom 26 of the cutting groove 25 may be formed to a level that is substantially flat.
參照圖2，針對改質層形成步驟來說明。圖2是顯示本實施形態之改質層形成步驟之一例的圖。 Referring to Fig. 2, the reforming layer forming step will be described. Fig. 2 is a view showing an example of a procedure for forming a modified layer in the embodiment.
如圖2所示，絶緣膜除去步驟之後，實施改質層形成步驟。改質層形成步驟中，在雷射加工裝置(不圖示)之卡盤31上透過保護膠帶17來保持晶圓W。又，利用攝影裝置(不圖示)來拍攝晶圓W之背面13，並以晶圓W之背面13的切割溝25為基準來校正。接著，加工頭32之射出口定位於晶圓W之切割溝25，並利用加工頭32從晶圓W之背面13側照射雷射光線。雷射光線為對於晶圓W具有透過性之波長，並調整成朝晶圓W表面12附近之內部來聚光。 As shown in FIG. 2, after the insulating film removing step, a reforming layer forming step is performed. In the reforming layer forming step, the wafer W is held by the protective tape 17 on the chuck 31 of the laser processing apparatus (not shown). Further, the back surface 13 of the wafer W is imaged by a photographing device (not shown) and corrected based on the dicing groove 25 of the back surface 13 of the wafer W. Next, the ejection opening of the processing head 32 is positioned on the dicing groove 25 of the wafer W, and the laser beam is irradiated from the back surface 13 side of the wafer W by the processing head 32. The laser light is a wavelength that is transparent to the wafer W and is adjusted to converge toward the inside of the surface 12 of the wafer W.
雷射光線透過切割溝25之溝底26，朝晶圓W內部照射，藉此不會妨礙絶緣膜15。又，由於切割溝25之溝底26形成為平坦且表面粗度Ra為0.1μm以下，因此可抑制溝底26之雷射光線之漫射，將晶圓W內部之適切位置適切地改質。且，一面調整雷射光線之聚光點，一面沿著切割溝25照射雷射光線，藉此在晶圓W內部沿著分割預定線14來形成優良之改質層35。 The laser light is transmitted through the groove bottom 26 of the dicing groove 25, and is irradiated toward the inside of the wafer W, whereby the insulating film 15 is not hindered. Further, since the groove bottom 26 of the dicing groove 25 is formed flat and the surface roughness Ra is 0.1 μm or less, the diffusion of the laser light of the groove bottom 26 can be suppressed, and the appropriate position inside the wafer W can be appropriately modified. Further, while adjusting the light collecting point of the laser light, the laser beam is irradiated along the cutting groove 25, whereby the modified layer 35 is formed along the dividing line 14 inside the wafer W.
此時，首先，在晶圓W表面附近調整聚光點，沿著所有切割溝25進行雷射加工而使改質層35下端部形成。且，使聚光點之高度上移時沿著切割溝25來重覆雷射加 工，藉此在晶圓W內部形成預定厚度之改質層35。如此一來，可在晶圓W內部形成沿著分割預定線14之分割起點。 At this time, first, the light collecting point is adjusted in the vicinity of the surface of the wafer W, and laser processing is performed along all the cutting grooves 25 to form the lower end portion of the modified layer 35. And, when the height of the concentrating point is moved up, the laser is repeated along the cutting groove 25 Thereby, a modified layer 35 of a predetermined thickness is formed inside the wafer W. In this way, the division starting point along the dividing line 14 can be formed inside the wafer W.
然而，當晶圓W薄到數十μm以下時，雷射光線會過度透過晶圓W，會有無法在晶圓W內部形成優良改質層35的情形。故，本實施形態中，在分割步驟之晶圓W的薄化前，實施改質層形成步驟，藉此使在晶圓W內部形成優良之改質層35者為可能。 However, when the wafer W is as thin as several tens of μm or less, the laser light is excessively transmitted through the wafer W, and the excellent reforming layer 35 cannot be formed inside the wafer W. Therefore, in the present embodiment, it is possible to form the modified layer forming step in the inside of the wafer W by performing the reforming layer forming step before the thinning of the wafer W in the dividing step.
而，改質層35是指因雷射光線之照射，晶圓W內部之密度、折射率、機械強度或其他物理特性變成與周圍不同之狀態，比起周圍強度降低的區域。改質層35是例如，溶融處理區域、裂痕區域、絶緣破壞區域、折射率變化區域，亦可為這些混合存在之區域。 On the other hand, the modified layer 35 refers to a region in which the density, the refractive index, the mechanical strength, or other physical properties of the wafer W become different from the surroundings due to the irradiation of the laser light, and the area is lower than the surrounding intensity. The reforming layer 35 is, for example, a molten processed region, a cracked region, an insulating fractured region, and a refractive index change region, and may be a region in which these are mixed.
參照圖3，針對分割步驟來說明。圖3是顯示本實施形態之分割步驟之一例的圖。而，本實施形態中，構造成利用一次之研磨加工來形成切割溝，但不限於該構成。例如，根據晶圓材質等，亦可藉由進行粗研磨加工、精修研磨加工、研磨加工，來將晶圓沿著分割預定線分割。 Referring to Fig. 3, the division step will be described. Fig. 3 is a view showing an example of a dividing step in the embodiment. On the other hand, in the present embodiment, the cutting groove is formed by one-time polishing processing, but the configuration is not limited thereto. For example, the wafer may be divided along the dividing line by rough polishing, finishing polishing, and polishing depending on the material of the wafer or the like.
如圖3所示，改質層形成步驟之後，實施分割步驟。如圖3A所示，分割步驟中，在研磨裝置(不圖示)之卡盤41上透過保護膠帶17來保持晶圓W。又，在保持於卡盤41之晶圓W的上方將研磨機構42定位。且，研磨機構42之研磨輪43繞著z軸旋轉並靠近卡盤41，在研磨輪43與晶圓W之背面13為平行狀態下旋轉接觸，藉此研磨晶圓W。利用該晶圓W之研磨，不只從晶圓W之背面13除去絶緣膜15， 亦可除去切割溝25之凹凸形狀。 As shown in FIG. 3, after the reforming layer forming step, a dividing step is performed. As shown in FIG. 3A, in the dividing step, the wafer W is held by the protective tape 17 on the chuck 41 of the polishing apparatus (not shown). Further, the polishing mechanism 42 is positioned above the wafer W held by the chuck 41. Further, the grinding wheel 43 of the polishing mechanism 42 rotates around the z-axis and approaches the chuck 41, and the wafer W is polished by the rotational contact between the grinding wheel 43 and the back surface 13 of the wafer W in a state of being parallel. By the polishing of the wafer W, the insulating film 15 is not only removed from the back surface 13 of the wafer W, The uneven shape of the cutting groove 25 can also be removed.
研磨加工中，利用工具規(不圖示)來即時測定晶圓W之厚度。且，工具規之測定結果可抑制研磨機構42之輸送量而使其與精修厚度L接近。又，在晶圓W內部，形成改質層35直到超過精修厚度L之高度位置為止。 In the polishing process, the thickness of the wafer W is measured instantaneously using a tool gauge (not shown). Further, the measurement result of the tool gauge can suppress the conveyance amount of the polishing mechanism 42 to be close to the finishing thickness L. Further, inside the wafer W, the reforming layer 35 is formed up to a height position exceeding the finishing thickness L.
如圖3B所示，根據研磨動作，研磨負荷從研磨輪43對於各改質層35會強烈作用。藉此，在晶圓W以改質層35為起點，沿著分割預定線14之破損會產生，將晶圓W分割成各個元件晶片C。且，當晶圓W薄化到精修厚度L時，就停止研磨動作。如上所述，晶圓W薄化到期望之精修厚度L，並沿著分割預定線14分割成各個元件晶片C。 As shown in FIG. 3B, the polishing load strongly acts on the reforming layer 35 from the grinding wheel 43 in accordance with the polishing operation. Thereby, the wafer W is broken along the dividing line 14 from the modified layer 35 as a starting point, and the wafer W is divided into the respective element wafers C. Further, when the wafer W is thinned to the finish thickness L, the polishing operation is stopped. As described above, the wafer W is thinned to the desired finish thickness L, and is divided into individual element wafers C along the division planned line 14.
然而，本案申請者在切割溝25之表面粗度為0.1μm以上時，用相同雷射加工條件來形成改質層35並進行研磨之後，分割步驟中在分割預定線14之各處會有未分割區域產生。這可考量為是因切割溝25之表面較粗，因此根據改質層形成步驟之雷射光線漫射等之影響，在晶圓W內部無法適切地形成改質層35之故。 However, in the case where the surface roughness of the dicing groove 25 is 0.1 μm or more, the applicant of the present invention forms the modified layer 35 by the same laser processing conditions and grinds it, and there is a case where the dividing line 14 is present in the dividing step. The split area is generated. This can be considered because the surface of the dicing groove 25 is relatively thick. Therefore, the reforming layer 35 cannot be appropriately formed inside the wafer W due to the influence of the diffusion of the laser light in the step of forming the reforming layer.
如上所述，根據本實施形態之晶圓加工方法，利用切割刀22從晶圓W之背面13將絶緣膜15沿著分割預定線14除去，藉此在晶圓W之背面13形成具有平坦溝底26之切割溝25。又，透過切割溝25照射雷射光線，藉此不會受到絶緣膜15之影響，在晶圓W內部可形成改質層35。此時，由於切割溝25之表面粗度為0.1μm以下，溝底26之寬度具有雷射點徑以上之寬度，因此可抑制溝底26之雷射光線之漫 射。藉此，在晶圓W內部之適切位置可形成適切之改質層35，將晶圓W沿著分割預定線14良好地分割。又，由於利用切割刀22從晶圓W之背面13將絶緣膜15部分地除去，因此與利用研磨加工從晶圓W背面13全體除去絶緣膜15的構成相比，便可縮短加工時間。 As described above, according to the wafer processing method of the present embodiment, the insulating film 15 is removed from the back surface 13 of the wafer W by the dicing blade 22 along the dividing line 14 to form a flat groove on the back surface 13 of the wafer W. The cutting groove 25 of the bottom 26. Further, the laser beam is irradiated through the dicing groove 25, whereby the reforming layer 35 can be formed inside the wafer W without being affected by the insulating film 15. At this time, since the surface roughness of the cutting groove 25 is 0.1 μm or less, the width of the groove bottom 26 has a width larger than the laser spot diameter, so that the laser light of the groove bottom 26 can be suppressed. Shoot. Thereby, an appropriate modified layer 35 can be formed at an appropriate position inside the wafer W, and the wafer W can be well divided along the planned dividing line 14. Further, since the insulating film 15 is partially removed from the back surface 13 of the wafer W by the dicing blade 22, the processing time can be shortened as compared with the configuration in which the insulating film 15 is removed from the entire back surface 13 of the wafer W by polishing.
而，本發明不限於上述實施形態，可進行各種變更來實施。上述實施形態中，針對附加圖式所圖示之大小或形狀等，不限定於此，在可發揮本發明效果之範圍內可適宜變更。此外，只要不脫離本發明目的之範圍，可適宜變更來實施。 However, the present invention is not limited to the above embodiment, and various modifications can be made. In the above-described embodiment, the size, shape, and the like of the drawings are not limited thereto, and can be appropriately changed within the range in which the effects of the present invention can be exerted. Further, it can be carried out as appropriate without departing from the scope of the object of the invention.
例如，本實施形態中，絶緣膜除去步驟中，構造成利用單一切割刀22在晶圓W形成切割溝25，但不限於該構成。例如，亦可使用砥粒徑不同之一對切割刀22，用其中一方之切割刀22來形成切割溝25，用另一方之切割刀22來調整切割溝25之表面粗度。 For example, in the present embodiment, in the insulating film removing step, the dicing groove 25 is formed on the wafer W by the single dicing blade 22, but the configuration is not limited thereto. For example, the cutting blade 22 may be formed by using one of the different particle diameters, the cutting blade 25 may be formed by one of the cutting blades 22, and the surface roughness of the cutting groove 25 may be adjusted by the other cutting blade 22.
又，本實施形態中，改質層形成步驟中構造成將改質層35沿著分割預定線14連續地形成，但不限於該構成。只要可沿著分割預定線14分割晶圓W，亦可將改質層35沿著分割預定線14斷續地形成。 Further, in the present embodiment, the reforming layer forming step is configured such that the modified layer 35 is continuously formed along the dividing line 14 , but the configuration is not limited thereto. The reforming layer 35 may be intermittently formed along the dividing line 14 as long as the wafer W can be divided along the dividing line 14 .
又，本實施形態中使雷射光線之聚光點上移來形成預定厚度的改質層35，但不限於該構成。改質層35藉由調整雷射加工之加工條件，亦可利用一次之雷射光線的照射來形成。又，在晶圓W內部可不只是1層之改質層35，亦可在厚度方向形成複數層之改質層35。 Further, in the present embodiment, the light-concentrating point of the laser beam is moved up to form the modified layer 35 having a predetermined thickness, but the configuration is not limited thereto. The reforming layer 35 can also be formed by irradiating the laser light once by adjusting the processing conditions of the laser processing. Further, in the inside of the wafer W, not only one layer of the reforming layer 35 but also a plurality of layers of the reforming layer 35 may be formed in the thickness direction.
又，本實施形態中，改質層35之一部分形成為跨越精修厚度L，但不限於該構成。改質層35只要在晶圓W表面附近，亦可在比精修厚度L更靠近晶圓W之背面13側(上側)來形成。此時，晶圓W藉由研磨到精修厚度L為止來除去改質層35，便可謀求提升橫向強度。又，在光學元件晶圓之情況下，晶圓W可謀求輝度之提升。 Further, in the present embodiment, one portion of the reforming layer 35 is formed to span the finishing thickness L, but the configuration is not limited thereto. The modified layer 35 may be formed closer to the back surface 13 side (upper side) of the wafer W than the finishing thickness L as long as it is in the vicinity of the surface of the wafer W. At this time, the wafer W is removed by polishing to the finish thickness L to remove the reforming layer 35, whereby the lateral strength can be improved. Moreover, in the case of an optical element wafer, the wafer W can be improved in luminance.
又，利用粗研磨加工、精修研磨加工、研磨加工來薄化晶圓W時，可在粗研磨加工、精修研磨加工、研磨加工任一階段來分割晶圓W。 Further, when the wafer W is thinned by the rough polishing process, the finish polishing process, or the polishing process, the wafer W can be divided at any stage of the rough polishing process, the finish polishing process, and the polishing process.
又，本實施形態中，絶緣膜除去步驟在切割裝置來實施、改質層形成步驟在雷射加工裝置來實施、研磨步驟在研磨裝置來實施，但亦可一部分之步驟或是所有步驟都在1個裝置來進行。 Further, in the present embodiment, the insulating film removing step is performed by the dicing apparatus, the reforming layer forming step is performed by the laser processing apparatus, and the polishing step is performed by the polishing apparatus. However, some or all of the steps may be performed. One device is used.
如以上說明，本發明具有可對於在背面形成有絶緣膜之晶圓，用短時間在適切位置形成適切之改質層的效果，特別是對將半導體晶圓或光學元件晶圓分割成各個晶片之晶圓加工方法相當有用。 As described above, the present invention has an effect of forming a suitable modified layer at a suitable position for a wafer having an insulating film formed on the back surface, in particular, dividing a semiconductor wafer or an optical element wafer into individual wafers. Wafer processing methods are quite useful.
11‧‧‧元件 11‧‧‧ components
12‧‧‧晶圓表面 12‧‧‧ Wafer surface
13‧‧‧晶圓背面 13‧‧‧ wafer back
14‧‧‧分割預定線 14‧‧‧Division line
15‧‧‧絶緣膜 15‧‧‧Insulation film
17‧‧‧保護膠帶 17‧‧‧Protection tape
31‧‧‧卡盤 31‧‧‧ chuck
25‧‧‧切割溝 25‧‧‧Cutting trench
26‧‧‧溝底 26‧‧ ‧ bottom
32‧‧‧加工頭 32‧‧‧Processing head
35‧‧‧改質層 35‧‧‧Modified layer
W‧‧‧晶圓 W‧‧‧ wafer
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| JP2010118506A (en) * | 2008-11-13 | 2010-05-27 | Disco Abrasive Syst Ltd | Wafer dividing method |
| JP5528904B2 (en) * | 2010-05-20 | 2014-06-25 | 株式会社ディスコ | Method for dividing sapphire wafer |
| JP5391158B2 (en) * | 2010-06-30 | 2014-01-15 | 古河電気工業株式会社 | Wafer sticking adhesive sheet and wafer processing method using the same |
| JP5687864B2 (en) * | 2010-08-10 | 2015-03-25 | 株式会社ディスコ | Method for dividing sapphire wafer |
| JP2012049164A (en) * | 2010-08-24 | 2012-03-08 | Disco Abrasive Syst Ltd | Method for manufacturing light-emitting device |
| JP5770446B2 (en) * | 2010-09-30 | 2015-08-26 | 株式会社ディスコ | Split method |
| JP5953645B2 (en) * | 2010-11-16 | 2016-07-20 | 株式会社東京精密 | Semiconductor substrate cutting method and semiconductor substrate cutting apparatus |
| JP5608521B2 (en) * | 2010-11-26 | 2014-10-15 | 新光電気工業株式会社 | Semiconductor wafer dividing method, semiconductor chip and semiconductor device |
| JP5758116B2 (en) * | 2010-12-16 | 2015-08-05 | 株式会社ディスコ | Split method |
-
2012
- 2012-10-01 JP JP2012219097A patent/JP6013858B2/en active Active
-
2013
- 2013-08-27 TW TW102130578A patent/TWI610357B/en active
- 2013-09-24 KR KR1020130113260A patent/KR102022732B1/en active IP Right Grant
- 2013-09-26 CN CN201310445302.5A patent/CN103715082B/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9831128B2 (en) | 2015-09-10 | 2017-11-28 | Disco Corporation | Method of processing a substrate |
| TWI607497B (en) * | 2015-09-10 | 2017-12-01 | 迪思科股份有限公司 | Method of processing a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI610357B (en) | 2018-01-01 |
| JP6013858B2 (en) | 2016-10-25 |
| KR20140043278A (en) | 2014-04-09 |
| JP2014072475A (en) | 2014-04-21 |
| KR102022732B1 (en) | 2019-09-18 |
| CN103715082A (en) | 2014-04-09 |
| CN103715082B (en) | 2018-01-23 |
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