CN114160958A - Method for combining laser invisible cutting and mechanical cutting of wafer - Google Patents
Method for combining laser invisible cutting and mechanical cutting of wafer Download PDFInfo
- Publication number
- CN114160958A CN114160958A CN202111479956.0A CN202111479956A CN114160958A CN 114160958 A CN114160958 A CN 114160958A CN 202111479956 A CN202111479956 A CN 202111479956A CN 114160958 A CN114160958 A CN 114160958A
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- wafer
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- 238000005520 cutting process Methods 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 20
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 14
- 239000010959 steel Substances 0.000 claims abstract description 14
- 238000001035 drying Methods 0.000 claims description 4
- 230000000593 degrading effect Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 230000003749 cleanliness Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000013072 incoming material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0093—Working by laser beam, e.g. welding, cutting or boring combined with mechanical machining or metal-working covered by other subclasses than B23K
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The invention relates to a method for combining laser invisible cutting and mechanical cutting of a wafer, which comprises the steps of attaching a film onto the wafer, fixing the wafer on a film stretching steel ring, carrying out first cutting on the wafer, separating the wafer from the film stretching steel ring, removing the film, carrying out second film pasting on the wafer again, fixing the wafer on the film stretching steel ring again, carrying out second cutting, separating the wafer from the film stretching steel ring again, carrying out third film pasting again, fixing the wafer on the film stretching steel ring again, and carrying out film widening treatment, so that the wafer is divided, and a chip is obtained. The method has simple steps and convenient operation, is suitable for large wafer thickness, greatly improves the cutting thickness, and can achieve the cutting effects of invisible cutting, low stress, small edge breakage and high cleanliness.
Description
The technical field is as follows:
the invention relates to the field of semiconductor chip manufacturing, in particular to a method for combining laser invisible cutting and mechanical cutting of a wafer.
Background art:
the laser invisible cutting is to focus a light beam inside a wafer through conical infrared laser, a silicon-based material on a focusing point is modified, cracks are formed on the modified silicon-based material and extend outwards, and chips are separated in a film-widening mode. Because the cracks are fine, silicon chips and dust are hardly generated after laser invisible cutting, the cutting edge breakage amount can be greatly reduced, the cutting stress is reduced, and the laser invisible cutting method is suitable for cutting wafers with high requirements on cleanness and small edge breakage amount.
The mechanical cutting of the wafer is to grind the silicon-based material of the wafer through a scribing knife, and the silicon-based material is ground through diamond particles falling off from the scribing knife so as to form scratches. The mechanical cutting is the most traditional scribing mode in the technical field of semiconductor chip manufacturing and packaging, has high efficiency, but has large cutting edge breakage amount, is easy to generate silicon chips and dust, and is easy to pollute chips.
With the development of the semiconductor industry, there are some wafers with micromechanical systems inside or with multi-layer structures, and the thickness is generally larger than 800 μm. The laser stealth dicing is affected by the thickness and material of the wafer, the effective dicing thickness is generally less than 500 μm, but in order to meet the requirements of low stress and high cleanliness of the wafer dicing, the laser stealth dicing and the mechanical dicing are combined to perform the dicing.
In the prior art, for example, in chinese patent "a processing technology for laser invisible cutting of a wafer" (patent No. CN 111451646A), the invisible cutting of a wafer with a larger thickness is realized mainly by grooving the upper surface of a laser and thinning the bottom surface, and the original thickness of the original wafer cannot be maintained by the wafer after the cutting.
The invention content is as follows:
the invention aims to overcome the defects in the prior art, and provides a method for combining laser invisible cutting and mechanical cutting of a wafer.
The application provides the following technical scheme:
a method for combining laser invisible cutting and mechanical cutting of a wafer is characterized in that: the method comprises the following steps of 1: attaching a UV film to the bottom surface of the wafer, and then fixing the UV film on the film stretching steel ring;
step 2: placing the bottom surface of the wafer on a vacuum chuck of laser invisible cutting equipment;
and step 3: a group of cavities are cut in the wafer through laser invisible cutting equipment, and the cavities are not communicated with each other.
And 4, step 4: after the step 3 is finished, taking the wafer out of the laser invisible cutting equipment, and cutting and removing the redundant UV film along the outer circular surface of the wafer;
and 5: after the redundant UV film is removed in the step 4, attaching a blue film to the upper surface of the wafer, and fixing the blue film on the film stretching steel ring;
step 6: after the blue film is attached in the step 5, placing the wafer on a UV glue-dissolving instrument, degrading the viscosity of the UV film on the bottom surface of the wafer, and finally peeling off all the UV films on the bottom surface of the wafer;
and 7: after the UV film is stripped in the step 6, the bottom surface of the wafer is placed on a vacuum disc of mechanical cutting equipment, and vacuum is absorbed;
and 8: after the wafer is placed in the step 7, cutting grooves are cut in the bottom surface of the wafer, the cutting grooves are communicated with the cavity in the step 3, and after cutting, the bottom surface of the wafer is cleaned and dried;
and step 9: cutting and removing the redundant blue film along the outer circular surface of the wafer according to the size of the wafer after the drying in the step 8 is finished;
step 10: after the redundant blue film is removed in the step 9, a second UV film is attached to the bottom surface of the wafer and then fixed on the film stretching steel ring;
step 11: after step 10 is completed, the wafer attached with the second UV film is subjected to film widening treatment, the wafer at the interval between two adjacent cavities inside the wafer is broken through the film widening treatment, and then each chip formed by cutting the wafer is cut, so that the cutting of the whole wafer is completed.
On the basis of the technical scheme, the following further technical scheme can be provided:
the cavity and the cutting groove are both in grid distribution.
The depth of the group of cavities in the step 3 is larger than that of the cutting groove in the step 8.
The invention has the advantages that:
the method has simple steps and convenient operation, is suitable for large wafer thickness, greatly improves the cutting thickness, and can achieve the cutting effects of invisible cutting, low stress, small edge breakage and high cleanliness.
Description of the drawings:
FIG. 1 is a schematic diagram of the present invention at the completion of step 1;
FIG. 2 is a schematic diagram of the present invention at the completion of step 5;
FIG. 3 is a schematic diagram of the present invention as it completes step 8;
fig. 4 is a schematic structural diagram of the wafer after step 11 is completed.
The specific implementation mode is as follows:
as shown in fig. 1-4, a method for combining laser stealth dicing and mechanical dicing of a wafer is characterized in that: the method comprises the following steps of 1: attaching the UV film 2 to the bottom surface of the wafer 1 by using film attaching equipment or a manual mode on the wafer 1 with the incoming material of 800 mu m, and then fixing the UV film 2 on the film stretching steel ring 3.
Step 2: the bottom surface of the wafer is placed on a vacuum chuck of laser invisible cutting equipment, and then data acquisition such as wafer correction, image recognition, height measurement and the like is carried out on the cutting equipment according to the pattern characteristics of the wafer.
And step 3: cavities with five layers of cavities distributed horizontally up and down are cut in the wafer through laser invisible cutting equipment, and the cavities 4 are distributed in grids and are not communicated with each other. The distance between the first layer cavity and the bottom surface of the wafer is 480 mu m. According to the power of 4w, the frequency is 100KHZ layer by layer and upward cutting, the power for cutting each layer of cavity according to the cutting effect can be adjusted, and the interval of each layer can be set and optimized according to the material and the scribing effect.
And 4, step 4: and (3) after the step (3) is finished, taking out the wafer from the laser invisible cutting equipment, and cutting and removing the redundant UV film along the outer circular surface of the wafer.
And 5: after the redundant UV film is removed in the step 4, the blue film 7 is attached to the upper surface of the wafer, the blue film 7 is fixed on the film stretching steel ring 3, and then the wafer is baked for 5min to 30min at the temperature of 40 ℃ to 100 ℃.
Step 6: after the blue film is attached in the step 5, the wafer is placed on a UV glue-dissolving instrument, the viscosity of the UV film on the bottom surface of the wafer is degraded, and finally all the UV films on the bottom surface of the wafer are peeled.
And 7: and (6) after the UV film is stripped in the step 6, placing the bottom surface of the wafer on a vacuum disc of mechanical cutting equipment, adsorbing vacuum, and carrying out data acquisition such as wafer correction, image recognition, height measurement and the like on the cutting equipment according to the pattern characteristics of the wafer.
And 8: and after the wafer is placed in the step 7, mechanically cutting the bottom surface of the wafer to form a cutting groove 6, wherein the depth of the cutting groove 6 is 500 microns so as to facilitate the communication of the first layer cavity, the scribing speed is 1-30mm/s, and cleaning and drying the bottom surface of the wafer 1 after cutting. The depth of the cutting groove is larger than the thickness of each cavity.
And step 9: and (4) cutting and removing the redundant blue film along the outer circular surface of the wafer according to the size of the wafer after the drying in the step (8).
Step 10: after removing the excess blue film in step 9, a second UV film 5 is attached to the bottom surface of the wafer 1 and then fixed to the film-stretched steel ring.
Step 11: after step 10 is completed, a film widening treatment is performed on the wafer to which the second UV film is attached, and the wafer at the interval between two adjacent cavities inside the wafer is broken by the film widening treatment, so that wafer segmentation is completed. And forming each chip, thereby completing the cutting of the whole wafer.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention.
Claims (3)
1. A method for combining laser invisible cutting and mechanical cutting of a wafer is characterized in that: the method comprises the following steps of 1: attaching a UV film to the bottom surface of the wafer, and then fixing the UV film on the film stretching steel ring;
step 2: placing the bottom surface of the wafer on a vacuum chuck of laser invisible cutting equipment;
and step 3: cutting a group of cavities in the wafer by using laser invisible cutting equipment, wherein the cavities are not communicated with each other;
and 4, step 4: after the step 3 is finished, taking the wafer out of the laser invisible cutting equipment, and cutting and removing the redundant UV film along the outer circular surface of the wafer;
and 5: after the redundant UV film is removed in the step 4, attaching a blue film to the upper surface of the wafer, and fixing the blue film on the film stretching steel ring;
step 6: after the blue film is attached in the step 5, placing the wafer on a UV glue-dissolving instrument, degrading the viscosity of the UV film on the bottom surface of the wafer, and finally peeling off all the UV films on the bottom surface of the wafer;
and 7: after the UV film is stripped in the step 6, the bottom surface of the wafer is placed on a vacuum disc of mechanical cutting equipment, and vacuum is absorbed;
and 8: after the wafer is placed in the step 7, cutting grooves are cut in the bottom surface of the wafer, the cutting grooves are communicated with the cavity in the step 3, and after cutting, the bottom surface of the wafer is cleaned and dried;
and step 9: cutting and removing the redundant blue film along the outer circular surface of the wafer according to the size of the wafer after the drying in the step 8 is finished;
step 10: after the redundant blue film is removed in the step 9, a second UV film is attached to the bottom surface of the wafer and then fixed on the film stretching steel ring;
step 11: after step 10 is completed, the wafer attached with the second UV film is subjected to film widening treatment, the wafer at the interval between two adjacent cavities inside the wafer is broken through the film widening treatment, and then each chip formed by cutting the wafer is cut, so that the cutting of the whole wafer is completed.
2. The method of claim 1, wherein the laser stealth dicing of the wafer is performed in combination with the mechanical dicing, the method comprising: the cavity and the cutting groove are both in grid distribution.
3. The method of claim 1, wherein the laser stealth dicing of the wafer is performed in combination with the mechanical dicing, the method comprising: the depth of each cavity in the step 3 is smaller than that of the cutting groove in the step 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111479956.0A CN114160958A (en) | 2021-12-07 | 2021-12-07 | Method for combining laser invisible cutting and mechanical cutting of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111479956.0A CN114160958A (en) | 2021-12-07 | 2021-12-07 | Method for combining laser invisible cutting and mechanical cutting of wafer |
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| Publication Number | Publication Date |
|---|---|
| CN114160958A true CN114160958A (en) | 2022-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111479956.0A Pending CN114160958A (en) | 2021-12-07 | 2021-12-07 | Method for combining laser invisible cutting and mechanical cutting of wafer |
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| Country | Link |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007165371A (en) * | 2005-12-09 | 2007-06-28 | Toshiba Corp | Method of manufacturing semiconductor device |
| CN102897708A (en) * | 2011-07-29 | 2013-01-30 | 美新半导体（无锡）有限公司 | Cutting method for MEMS wafer |
| CN103715082A (en) * | 2012-10-01 | 2014-04-09 | 株式会社迪思科 | Processing method of wafer |
| CN104779204A (en) * | 2014-01-15 | 2015-07-15 | 株式会社迪思科 | Wafer processing method |
| JP2016081990A (en) * | 2014-10-14 | 2016-05-16 | 株式会社ディスコ | Wafer division method |
| CN109300842A (en) * | 2017-07-24 | 2019-02-01 | 株式会社迪思科 | The processing method of chip |
-
2021
- 2021-12-07 CN CN202111479956.0A patent/CN114160958A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007165371A (en) * | 2005-12-09 | 2007-06-28 | Toshiba Corp | Method of manufacturing semiconductor device |
| CN102897708A (en) * | 2011-07-29 | 2013-01-30 | 美新半导体（无锡）有限公司 | Cutting method for MEMS wafer |
| CN103715082A (en) * | 2012-10-01 | 2014-04-09 | 株式会社迪思科 | Processing method of wafer |
| CN104779204A (en) * | 2014-01-15 | 2015-07-15 | 株式会社迪思科 | Wafer processing method |
| JP2016081990A (en) * | 2014-10-14 | 2016-05-16 | 株式会社ディスコ | Wafer division method |
| CN109300842A (en) * | 2017-07-24 | 2019-02-01 | 株式会社迪思科 | The processing method of chip |
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Application publication date: 20220311 |