CN104409417B - A kind of profile cutting-up for ultrathin quartz substrate thin film circuit and pick piece method - Google Patents
A kind of profile cutting-up for ultrathin quartz substrate thin film circuit and pick piece method Download PDFInfo
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- CN104409417B CN104409417B CN201410531693.7A CN201410531693A CN104409417B CN 104409417 B CN104409417 B CN 104409417B CN 201410531693 A CN201410531693 A CN 201410531693A CN 104409417 B CN104409417 B CN 104409417B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
- H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The invention discloses a kind of profile cutting-up for ultrathin quartz substrate thin film circuit and piece method is picked, comprised the following steps：Ultrathin quartz substrate, small carrying substrates and the big carrying substrates for forming array circuit figure are provided；Ultrathin quartz substrate is face-up integrated with small carrying substrates, big carrying substrates according to upper, middle and lower order temporary bond；Ultrathin quartz substrate is cut through, array circuit is formed；Ultra-thin quartz thin film circuit is separated with small carrying substrates, big carrying substrates respectively；Ultra-thin quartz thin film circuit is picked up, is cleaned and drying process.The present invention is not only easy to operation, and circuit profile is complete, and pattern is good so that yields is substantially improved.
Description
Technical field
It is used for ultra-thin stone the invention belongs to millimeter wave, submillimeter wave ic manufacturing technology field, more particularly to one kind
The profile cutting-up of English substrate membrane circuit and pick piece method.
Background technology
The circuit substrate that quartz substrate is generally used as Terahertz frequency range part, material selects the isotropism of high-purity
Vitreous silica, reason is that quartzy dielectric constant in hundreds of 5 GHz bands is relatively stable, and loss is less than microwave current millimeter wave
Frequency range baseplate material, its heat and mechanical performance are also relatively stable.Quartz substrate thin film circuit figure is generally integrated using semiconductor
Prepared by the big substrate of circuit technology, multiple-unit mode, processing procedure includes：Substrate cleaning, plated film, photoengraving, thick metal plated and profile
The processes such as cutting-up, machining accuracy is up to micron level, but quartz substrate is substrate thickness in the major limitation of frequency applications.
Select the quartz of thickness≤50 μm as the thin substrate material of THz frequency range parts, planar profile can be square piece or circle
Piece.Ultrathin quartz substrate thin film circuit figure develops towards miniaturization, high-precision direction, and possesses following characteristics：1) ultra-thin stone
English thin film circuit plane width is small to 100 μm；2) maximum length-width ratio is up to 50:1；3) ultra-thin quartz thin film circuit profile is wide
Spend tolerance up to 10 μm or less than 10 μm, therefore profile cutting-up and pick blade technolgy become ultrathin quartz substrate thin film circuit process
Key technology, its success or not, be directly connected to ultrathin quartz substrate thin film circuit making success or failure.However, with stone
English substrate thins down, its fragility just it is increasing, corresponding fracture strength just it is less and less, that is, substrate anti-folding
Ability is more and more weaker.Because the quartz substrate of thickness≤50 μm is ultra-thin, the substrate caused by traditional dicing technique bursts apart, micro-damage
Influence etc. defect to the reliability of thin film circuit seems more and more prominent, bursting apart when how to reduce thin quartz substrate scribing,
Micro-damage and piece is effectively picked, the problem that must be solved when being ultrathin quartz substrate circuit fabrication.
The cutting of thin film circuit typically has the modes such as laser cutting, cutting-up sliver technology, emery wheel cutting-up.Laser cutting technique
It is that workpiece surface is acted on by superlaser so that workpiece melts or direct gasification reaches the purpose of cutting-up workpiece, material energy
Enough most important condition for realizing laser cutting are that absorption of the material to cutting laser will get well, i.e. light of the material to cutting laser
Learning absorptivity wants height, optical transmittance low.And quartz glass is a kind of typical transparent dielectric, forbidden band is wider, it is impossible to inhale
Receive the photon energy of single visible and infrared band, only in the case where light intensity is high, the Multiphoton Absorbtion section of glass
Increase, can just occur Multiphoton Absorbtion.During therefore using laserscribing come cutting-up small size quartz substrate thin film circuit, stone
English transparent medium is relatively low to the absorptivity of laser, and the heat effect of laser can cause workpiece incision re cast layer occur, at present
Conventional Ultra-Violet Laser machine or picosecond laser machine can not carry out good cutting-up to quartz medium.Cutting-up sliver technology is to utilize laser
Or sand-wheel slice cutting machine first cuts out crackle on workpiece, then breaking machine is reused so that workpiece is along crackle and itself cleavage
Facial cleft, the technology typically requires that base material is monocrystal material, such as sapphire, silicon, GaAs wafer.And for tekite
This non-crystalline material of English, because material does not possess certain crystal structure in itself, no cleavage surface, sliver effect is poor.Therefore, draw
Cut the profile that sliver mode is not suitable for cutting-up ultrathin quartz substrate thin film circuit yet.
Existing emery wheel dicing technique, is directly to glue workpiece using the adhesive (such as glue, paraffin) of high bond strength
It is connected to hard substrate or is bonded with blue film, UV films, then the profile directly to workpiece carries out cutting-up, also becomes the quartzy base of cutting-up
The most common means of piece thin film circuit.But when workpiece size reduces, the bond area of workpiece bottom diminishes so that binding agent
Bonding force to workpiece declines；When thickness of workpiece reduces, the fracture strength of workpiece can drop suddenly, in the emery wheel and work of high speed rotation
When part interacts, emery wheel can produce a side force to workpiece, but during workpiece size reduction, the effect of the power can be far longer than
The bonding force of adhesive and the fracture strength of workpiece, and effect of the side force to workpiece is uneven, this influence can be with
Workpiece reduces and increased, and the phenomenon such as is come off, bursts apart so that there is workpiece.The ultra-thin quartz thin film circuit tool of THz frequency range parts
For two notable features of microsize profile and ultrathin, existing emery wheel dicing technique is capable of the minimum dimension master of cutting-up
The intensity of adhesives is depended on, and the fracture strength of material is had higher requirements.Due to the quartzy base of thickness≤50 μm
The features such as piece has ultra-thin, frangible, along with the ultra-thin circuitous pattern of design develops towards miniaturization, high-precision direction, often
Occur that workpiece such as bursts apart, come off at the phenomenon, yield rate is almost nil.Thin discs cutting is more in current chip processing procedure is cut using STEP
Technique is cut, i.e., first with a groove for knife being opened in disk surfaces certain depth, effect is to remove metal, the resolution chart in scribe line
Deng, then with another knife cut through disk.Using this technique, although saw blade overload problem common during thin slice scribing can be solved,
But the quartz substrate as where ultra-thin quartz thin film circuit is very thin, then the cutting quantity of second knife is just very small, cutting
Amount is smaller, and the load of saw blade is also smaller during cutting, and too small load can cause the diamond dust being worn during cutting can not be from knife
Peel off and update in time on piece, it is possible to occur the more serious back of the body and collapse, emery wheel saw blade still can cause certain in circuit edge
Micro-damage.
Number of patent application 201310595272.6 discloses a kind of cutting-up method suitable for small size workpiece, including as follows
Step：Cutting-up workpiece is treated in a, preparation；B, it will treat that cutting-up workpiece is pasted onto on substrate by adhesive；C, using scribing machine treat draw
Cut part carries out the first knife or first group of knife cutting-up；D, treat the first knife or first group of knife cutting-up after the completion of, will by the first knife or
All joint-cuttings of first group of knife cutting-up formation are filled with filler, and carry out curing process；E, using scribing machine treat draw
Cut part carries out next knife or next group of knife cutting-up；F, treat step e cutting-ups after the completion of, will be by all of step e cutting-ups formation
Joint-cutting is filled with filler, and carries out curing process；G, repeat step e and step f operation, until treating cutting-up workpiece
Cutting-up is completed；The adhesive and filler used during h, removing cutting-up, obtains the small size workpiece after cutting-up.The cutting-up
Method will treat that cutting-up workpiece is pasted onto on substrate and carries out first cutting-up first, then into the joint-cutting by the formation of first cutting-up
Filler is added, secondary cutting-up is carried out again after it solidifies, the like, need to be formed in this cutting-up after the completion of each cutting-up
Joint-cutting in add filler and make curing process, until treating that cutting-up workpiece cutting-up is completed, remove adhesive and filler and drawn
Small size workpiece after cutting.This method enables cutting-up of the super-small quartz substrate thin film circuit on plain wheel scribing machine
Realize, filler delivers scribing machine and is applied to the side force for treating cutting-up workpiece during cutting-up, by the cutting-up of workpiece during cutting-up
Stress decrease, reduces the phenomenon such as come off, burst apart of the excessive generation of workpiece stress.But when the progress in ultrathin quartz substrate
When thin film circuit profile is cut several times, the operating procedure in this method is clearly present complex process, inefficiency, filler
Dissolving the shortcomings of remove time length, remove unclean, the selection of binding agent and filler needs to be overcautious and indecisive, can quickly by
Workpiece is integrated with carrying substrates solidification, to be also easy to by common either physically or chemically quickly by both interim viscous
Junctor is separated.And this method do not refer to small size workpiece as similar ultra-thin quartz thin film circuit yet pick piece method.
It is that from adhesive film satisfactory workpiece is transferred into film magazine (Tray) is inner to pick piece (also referred to as screening or choose grain), it is ensured that
Fixed qty, the neat set state conformed to quality requirements, are convenient to the use of next procedure.Automatic arranging machine is that one kind will be conformed to
The workpiece asked is picked up from adhesive film, a kind of equipment of the automatic-discharging in film magazine, collection machinery, electric, vision, motion control etc.
Technology can automatically, efficiently substitute in one and manually choose piece.However, automatic arranging machine is only applicable to pass through after cutting-up at present
The situation that workpiece is picked up by the step of adhesive film spread sheet, demoulding and vacuum suction from adhesive film, is not suitable for workpiece and adopts
The situation of cutting-up on hard substrate is adhered to the adhesive (such as glue, paraffin) of high bond strength.Because workpiece is directly used
The adhesive of high bond strength be adhered on hard substrate after cutting-up, it is necessary to dedicated solvent immersion can just remove adhesive, clean
Later, there is a small amount of residual solvent in container bottom, and the residual solvent drains the air of workpiece and container bottom, makes between the two
It is in close to vacuum state, under atmospheric pressure, is hanged in pickup thickness≤50 μm, plane width >=100 μm and length-width ratio
During this kind of workpiece of different quartz substrate thin film circuit, pick-up capability is very limited, it is difficult to by workpiece from cleaning container bottom
Carry out directly effectively pickup.The piece method that picks most common at present is manually to be gripped using tweezers, and uses tweezers to grip ultra-thin stone
English thin film circuit belongs to hard contact, can bring the deficiencies such as the chipping of thin film circuit profile, fracture, the scuffing of circuit surface pattern.
The content of the invention
The present invention is in order to solve the above problems, it is proposed that a kind of profile cutting-up for ultrathin quartz substrate thin film circuit and
Piece method is picked, this technique is simple, reliability is high.
To achieve these goals, the present invention is adopted the following technical scheme that：
A kind of profile cutting-up for ultrathin quartz substrate thin film circuit and piece method is picked, comprised the following steps：
(1) ultrathin quartz substrate, small carrying substrates and the big carrying substrates for forming array circuit figure are provided；
(2) it is ultrathin quartz substrate is face-up interim according to upper, middle and lower order with small carrying substrates, big carrying substrates
It is bonded as one；
(3) ultrathin quartz substrate is cut through, forms array circuit；
(4) ultra-thin quartz thin film circuit is separated with small carrying substrates, big carrying substrates respectively；
(5) ultra-thin quartz thin film circuit is picked up, is cleaned and drying process.
The feature of the ultra-thin quartz thin film circuit is：Plane width >=100 μm, length-width ratio≤50:1.
The ultrathin quartz substrate is shaped as circle, rectangle, square or irregular shape, and thickness is 30 μm -50 μm, is put down
Face area is 1cm2-60cm2。
The front of the ultrathin quartz substrate to form array circuit patterned surface, the back side be without metal film surfaces, or
To form the array circuit patterned surface with front-side circuit pattern symmetrical, or it is the thin film metallized ground plane of full plate.
The planar dimension of the small carrying substrates is more than or equal to ultrathin quartz substrate appearance and size, is shaped as circular, rectangle
Or square, thickness is 0.254mm-0.65mm.
The planar dimension of the big carrying substrates is more than the size of small carrying substrates, is shaped as circular, rectangular or square,
Thickness is 0.5mm-1.5mm.
The specific method of the step (2) is：Small carrying substrates are first heated to 160~180 DEG C and one is coated thereon
30~100 μm of sealing wax binding agent of layer, then by ultrathin quartz substrate face-up with the sealing wax binding agent on small carrying substrates
Infiltration is bonded, then natural cooling formation temporary bond body；Big carrying substrates are heated to 160~180 DEG C again and applied thereon
One layer 30~100 μm of sealing wax binding agent is covered, by the temporary bond body of ultrathin quartz substrate and small carrying substrates according to suitable up and down
Sequence is placed on big carrying substrates, is infiltrated and is bonded by sealing wax, last natural cooling formation ultrathin quartz substrate, small carrying substrates with
The temporary bond body of big carrying substrates.
The specific method of the step (3) is：Ultrathin quartz substrate is cut through using sand-wheel slice cutting machine, is cut several times
Cut, form the ultra-thin quartz thin film circuit of rectangle；Sand-wheel slice cutting machine workpiece plate first will form super using vacuum suction mode during cutting-up
Thin quartz substrate, small carrying substrates are fixed with big carrying substrates according to the temporary bond body of upper, middle and lower order, then set master
Cutting position is found in rotating speed, feed speed and cutting-up depth, the image unit identification of configuration, respectively along ultra-thin quartz thin film electricity
The short side of road rectangular profile and long side carry out joint-cutting processing.
The specific method of the step (4) is：First by ultra-thin quartz thin film circuit and the temporary bond body of small carrying substrates
Separate, then soak the temporary bond body alcohol or acetone of ultra-thin quartz thin film circuit and small carrying substrates with big carrying substrates
Bubble separation.
In the step (5), the specific method for picking up ultra-thin quartz thin film circuit is：Soaked with writing brush in alcohol or acetone
Profit dips ultra-thin quartz thin film circuit.
In the step (5), the method for cleaning and dry ultra-thin quartz thin film circuit is：Alcohol or third are first dipped with writing brush
Ketone gently cleans ultra-thin quartz thin film circuit surface, then dries naturally.
The present invention operation principle be：Due to thering is high thickness, the bonding of the small carrying substrates of big planar dimension and support to make
With therefore, the cutting-up of ultrathin quartz substrate has developed into the hemisection of ultrathin quartz substrate and small carrying substrates temporary bond body, edge
Cutting-up line, which cuts through ultrathin quartz substrate, can form array circuit rectangular profile；The main stress point of workpiece is located at small carrying substrates
With on the binding agent of big carrying substrates, weaken ultra-thin quartz thin film circuit because microsize profile and ultrathin is brought by
The inferior position that power area is small, fracture strength is small；Easily both can be separated using solvent soaking after cutting-up, reuse writing brush molten
Ultra-thin quartz thin film circuit is picked up in agent, this method belongs to soft contact, be not only easy to operation, and circuit profile is complete so that
Yields is substantially improved.
Beneficial effects of the present invention are：
(1) during the ultra-thin quartz thin film circuit profile of cutting-up, the bonding of high thickness, the small carrying substrates of big planar dimension is passed through
And supporting role, the main stress point of workpiece is located at small carrying substrates with the binding agent of big carrying substrates, weakening ultra-thin stone
English thin film circuit is because of the inferior position that lifting surface area is small, fracture strength is small that microsize profile and ultrathin are brought, along cutting-up line
Intact array circuit rectangular profile can be formed by cutting through ultrathin quartz substrate.
(2) parcel workpiece but the similar ultra-thin quartz thin film circuit of easy damaged is not allowed using the soft, fine and smooth of writing brush and easily
Small workpiece profile pattern characteristic, belong to soft operating of contacts, advantageously ensure that circuit profile is complete and circuit topography well,
So that yields is substantially improved.
(3) it is not only able to soon as the strength adhesive of ultrathin quartz substrate and carrying substrates temporary bond body using sealing wax
The temporary bond body that fast ground sequentially forms ultrathin quartz substrate, small carrying substrates with big carrying substrates according to upper, middle and lower is consolidated
Change, and quickly and easily can be separated the temporary bond body using solvent after cutting-up, the selection of binding agent has been accomplished before looking forward or upwards
Gu Hou, " under Yi Shangyi ".In addition, in process, technological parameter requires low, easy to operate, with low cost.
Brief description of the drawings
Fig. 1 is schematic flow sheet of the invention；
Fig. 2 is process schematic representation of the invention；
Fig. 3 treats the schematic layout pattern of the ultrathin quartz substrate thin film circuit of cutting-up for the array format of the present invention.
Wherein, 301, ultrathin quartz substrate；302nd, small carrying substrates；303rd, big carrying substrates；304th, sealing wax binding agent；
310th, X-direction joint-cutting；311st, Y-direction joint-cutting；312nd, ultra-thin quartz thin film circuit.
Embodiment：
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
As shown in figure 1, it is an object of the invention to provide a kind of cutting-up for ultrathin quartz substrate thin film circuit and picking
Piece method, comprises the following steps：
Step 101：Ultrathin quartz substrate, small carrying substrates and the big carrying substrates for forming array circuit figure are provided；
Step 102：By ultrathin quartz substrate face-up with small carrying substrates, big carrying substrates according to upper, middle and lower order
Temporary bond is integrated；
Step 103：Ultrathin quartz substrate is cut through, array circuit is formed；
Step 104：Ultra-thin quartz thin film circuit is separated with small carrying substrates, big carrying substrates respectively；
Step 105：Ultra-thin quartz thin film circuit is picked up, is cleaned and drying process.
In step 101, the feature of ultra-thin quartz thin film circuit is：Plane width >=100 μm, length-width ratio≤50:1.It is ultra-thin
Quartz substrate is shaped as circle, rectangle, square or irregular shape, and thickness is 30 μm -50 μm, and the area of plane is 1cm2-
60cm2.The front of the ultrathin quartz substrate is forms array circuit patterned surface, and the back side is, without metal film surfaces, or to be
The array circuit patterned surface with front-side circuit pattern symmetrical is formed, or is the thin film metallized ground plane of full plate.
In step 101, the planar dimension of small carrying substrates is more than or equal to ultrathin quartz substrate appearance and size, is shaped as circle
Shape, rectangular or square, thickness are 0.254mm-0.65mm；The planar dimension of big carrying substrates is more than the chi of small carrying substrates
It is very little, circular, rectangular or square is shaped as, thickness is 0.5mm-1.5mm.
It is in step 102, ultrathin quartz substrate is face-up suitable according to upper, middle and lower with small carrying substrates, big carrying substrates
The method that sequence is bonded as one using binding agent is：Small carrying substrates are first heated to 160~180 DEG C and one layer is being coated thereon
30~100 μm of sealing wax binding agent, then face-up soaks ultrathin quartz substrate with the sealing wax binding agent on small carrying substrates
Profit is bonded, then natural cooling formation temporary bond body；Big carrying substrates are heated to 160~180 DEG C again and coated thereon
One layer 30~100 μm of sealing wax binding agent, by the temporary bond body of ultrathin quartz substrate and small carrying substrates according to order up and down
Be placed on big carrying substrates, infiltrated and be bonded by sealing wax, last natural cooling formation ultrathin quartz substrate, small carrying substrates with it is big
The temporary bond body of carrying substrates.
In step 103, the method for cutting through ultrathin quartz substrate is：Ultrathin quartz substrate is cut through using sand-wheel slice cutting machine, is entered
Row is cut several times, forms the ultra-thin quartz thin film circuit of rectangle.Sand-wheel slice cutting machine workpiece plate first uses vacuum suction side during cutting-up
Formula is fixed ultrathin quartz substrate, small carrying substrates is formed with big carrying substrates according to the temporary bond body of upper, middle and lower order,
Then the speed of mainshaft, feed speed and cutting-up depth are set, and cutting position is found in the image unit identification of configuration, respectively along ultra-thin
The short side of quartz thin film circuit rectangular profile and long side carry out joint-cutting processing.
In step 104, the method that ultra-thin quartz thin film circuit is separated with small carrying substrates, big carrying substrates is：First will be super
Thin quartz thin film circuit is separated with the temporary bond body of small carrying substrates with big carrying substrates, then by ultra-thin quartz thin film circuit
Separated with the temporary bond body of small carrying substrates with alcohol or acetone soak.
In step 105, the specific method for picking up ultra-thin quartz thin film circuit is：Infiltrated and dipped in alcohol or acetone with writing brush
Take ultra-thin quartz thin film circuit；Clean and the method for dry ultra-thin quartz thin film circuit is：Alcohol or acetone are first dipped with writing brush
Ultra-thin quartz thin film circuit surface is gently cleaned, is then dried naturally.
Embodiment one,
One 50 μ m-thick of cutting-up, planar dimension are 3 × 22 array shapes in 20mm × 20mm square ultrathin quartz substrate
The joint-cutting size of the rectangular profile thin film circuit of formula, X-direction and Y-direction is 80 μm, and circuit face is to form array circuit figure
Shape surface, the back side is that, without metal film surfaces, thin film circuit graphics plane size is 4.8mm × 0.3mm, and length-width ratio is 16:1.
There is provided ultrathin quartz substrate, small carrying substrates and the big carrying substrates each one for forming array circuit figure for step 1.
The square ultrathin quartz substrate 301 of 50 μ m-thicks is provided first, and planar dimension is 20mm × 20mm, and front is
Array circuit patterned surface is formed, the back side is without metal film surfaces；Being ready for 0.5mm thickness, a planar dimension is
25.4mm × 25.4mm square quartz glass is used as small carrying substrates 302；Preparing 1.5mm thickness, a planar dimension again is
76.2mm × 76.2mm square quartz glass is used as big carrying substrates 303.
Step 2, ultrathin quartz substrate is face-up made with small carrying substrates, big carrying substrates according to upper, middle and lower order
It is bonded as one with binding agent.
It is 180 DEG C to set heating platen temperature, and first small carrying substrates 302 are put on warm table and heat 15s, and in its upper table
Face coats one layer 50 μm of sealing wax binding agent 304 so that sealing wax melts and overlay area is more than or equal to ultrathin quartz substrate 301
Upper surface area, then face-up infiltrates ultrathin quartz substrate 301 with the sealing wax binding agent 304 on small carrying substrates 302
It is bonded, then natural cooling formation temporary bond body；Big carrying substrates 303 are heated to 15s at 180 DEG C again and in its upper surface
The sealing wax binding agent 304 of one layer 50 μm of coating so that sealing wax melts and overlay area is more than or equal to the upper table of small carrying substrates 302
Face area, big carrying base is subsequently placed at by the temporary bond body of ultrathin quartz substrate 301 and small carrying substrates 302 above and below
On piece 303, infiltrated and be bonded by sealing wax binding agent 304, last natural cooling formation ultrathin quartz substrate 301, small carrying substrates
302 with big carrying substrates 303 according to upper, middle and lower order temporary bond body.
Step 3, the ultrathin quartz substrate is cut through using sand-wheel slice cutting machine, forms array circuit rectangular profile.
Sand-wheel slice cutting machine workpiece plate using vacuum suction mode will be formed ultrathin quartz substrate 301, small carrying substrates 302 with
Big carrying substrates 303 are fixed according to the temporary bond body of upper, middle and lower order, and the speed of mainshaft is set into 28000rpm, feeding speed
Degree is set to 5mm/s, and cutting-up depth is set to 0.15mm, and cutting position is found in the image unit identification of configuration, first along ultra-thin stone
The short side of the rectangular profile of English thin film circuit 312 is the parallel knife of cutting-up 4 of Y-direction shown in Fig. 3, forms 4 Y-direction joint-cuttings 311, then
It is the parallel knife of cutting-up 23 of X-direction shown in Fig. 3 along the long side of rectangular profile, forms 23 X-direction joint-cuttings 310, so far can be complete
Joint-cutting into the ultra-thin quartz thin film circuit 312 of 3 × 22 array formats is handled.
Step 4, ultra-thin quartz thin film circuit is separated with small carrying substrates, big carrying substrates respectively.
First with scalpel by the temporary bond body of ultrathin quartz substrate 301 and small carrying substrates 302 and big carrying substrates 303
The temporary bond body of ultrathin quartz substrate 301 and small carrying substrates 302, is then put into and fills in the culture dish with alcohol by separation
30min is soaked, then both are separated.
Step 5, ultra-thin quartz thin film circuit is picked up, is cleaned and drying process.
After ultrathin quartz substrate 301 is separated with small carrying substrates 302 using solvent soaking, with No. zero writing brush writing brush of cleaning
Gently infiltration dips ultra-thin quartz thin film circuit 312 in spirituous culture dish is contained, and diameter 15cm qualitative filter is put in successively
On paper.On qualitative filter paper, first dip a small amount of acetone with No. zero writing brush writing brush and gently clean ultra-thin quartz thin film circuit 312 successively
Surface, then dries naturally, you can obtain the intact ultra-thin quartz thin film circuit 312 of cutting-up.
Embodiment two,
One 30 μ m-thick of cutting-up, planar dimension are 2 × 21 array shapes in 20mm × 20mm square ultrathin quartz substrate
The joint-cutting size of the thin film circuit of formula, X-direction and Y-direction is 50 μm, and circuit face is carried on the back to form array circuit patterned surface
Face is the thin film metallized ground plane of full plate, and thin film circuit graphics plane size is 7.8mm × 0.2mm, and length-width ratio is 39:1.
There is provided ultrathin quartz substrate, small carrying substrates and the big carrying substrates each one for forming array circuit figure for step 1.
The square ultrathin quartz substrate 301 of 30 μ m-thicks is provided first, and planar dimension is 20mm × 20mm, and front is
Array circuit patterned surface is formed, the back side is the thin film metallized ground plane of full plate；It is ready for 0.65mm thickness, a planar dimension
Small carrying substrates 302 are used as 25.4mm × 25.4mm square quartz glass；Preparing 1mm thickness, a planar dimension again is
76.2mm × 76.2mm square quartz glass is used as big carrying substrates 303.
Step 2, ultrathin quartz substrate is face-up made with small carrying substrates, big carrying substrates according to upper, middle and lower order
It is bonded as one with binding agent.
It is 170 DEG C to set heating platen temperature, and first small carrying substrates 302 are put on warm table and heat 15s, and in its upper table
Face coats one layer 80 μm of sealing wax binding agent 304 so that sealing wax melts and overlay area is more than or equal to ultrathin quartz substrate 301
Upper surface area, then face-up infiltrates ultrathin quartz substrate 301 with the sealing wax binding agent 304 on small carrying substrates 302
It is bonded, then natural cooling formation temporary bond body；Big carrying substrates 303 are heated to 15s at 170 DEG C again and in its upper surface
The sealing wax binding agent 304 of one layer 80 μm of coating so that sealing wax melts and overlay area is more than or equal to the upper table of small carrying substrates 302
Face area, big carrying base is subsequently placed at by the temporary bond body of ultrathin quartz substrate 301 and small carrying substrates 302 above and below
On piece 303, infiltrated and be bonded by sealing wax binding agent 304, last natural cooling formation ultrathin quartz substrate 301, small carrying substrates
302 with big carrying substrates 303 according to upper, middle and lower order temporary bond body.
Step 3, ultrathin quartz substrate is cut through using sand-wheel slice cutting machine, forms array circuit rectangular profile.
Sand-wheel slice cutting machine workpiece plate using vacuum suction mode will be formed ultrathin quartz substrate 301, small carrying substrates 302 with
Big carrying substrates 303 are fixed according to the temporary bond body of upper, middle and lower order, and the speed of mainshaft is set into 30000rpm, feeding speed
Degree is set to 5mm/s, and cutting-up depth is set to 0.20mm, and cutting position is found in the image unit identification of configuration, first along ultra-thin stone
The short side of the rectangular profile of English thin film circuit 312 is the parallel knife of cutting-up 3 of Y-direction shown in Fig. 3, forms 3 Y-direction joint-cuttings 311, then
It is the parallel knife of cutting-up 22 of X-direction shown in Fig. 3 along the long side of rectangular profile, forms 22 X-direction joint-cuttings 310, so far can be complete
Joint-cutting into the ultra-thin quartz thin film circuit 312 of 2 × 21 array formats is handled.
Step 4, ultra-thin quartz thin film circuit is separated with small carrying substrates, big carrying substrates respectively.
First with scalpel by the temporary bond body of ultrathin quartz substrate 301 and small carrying substrates 302 and big carrying substrates 303
The temporary bond body of ultrathin quartz substrate 301 and small carrying substrates 302, is then put into and fills in the culture dish with acetone by separation
10min is soaked, then both are separated.
Step 5, ultra-thin quartz thin film circuit is picked up, is cleaned and drying process.
After ultrathin quartz substrate 301 is separated with small carrying substrates 302 using solvent soaking, with No. zero writing brush writing brush of cleaning
Gently infiltration dips ultra-thin quartz thin film circuit 312 in spirituous culture dish is contained, and diameter 15cm qualitative filter is put in successively
On paper.On qualitative filter paper, first dip a small amount of alcohol with No. zero writing brush writing brush and gently clean ultra-thin quartz thin film circuit 312 successively
Surface, then dries naturally, you can obtain the intact ultra-thin quartz thin film circuit 312 of cutting-up.
Embodiment three,
One 50 μ m-thick of cutting-up, planar dimension are 5 × 20 array shapes in 20mm × 20mm square ultrathin quartz substrate
The joint-cutting size of the two-side film membrane circuit of formula, X-direction and Y-direction is 100 μm, and front is to form array circuit patterned surface,
The back side is to form the array circuit patterned surface with front-side circuit pattern symmetrical, thin film circuit graphics plane size be 2.4mm ×
0.3mm, length-width ratio is 8:1.
There is provided ultrathin quartz substrate, small carrying substrates and the big carrying substrates each one for forming array circuit figure for step 1.
The square ultrathin quartz substrate 301 of 50 μ m-thicks is provided first, and planar dimension is 20mm × 20mm, and front is
Array circuit patterned surface is formed, the back side is to form the array circuit patterned surface with front-side circuit pattern symmetrical；It is ready for
One 0.5mm thickness, planar dimension are used as small carrying substrates 302 for 25.4mm × 25.4mm square quartz glass；Prepare again
One 1.5mm thickness, planar dimension are used as big carrying substrates 303 for 76.2mm × 76.2mm square quartz glass.
Step 2, ultrathin quartz substrate is face-up made with small carrying substrates, big carrying substrates according to upper, middle and lower order
It is bonded as one with binding agent.
It is 180 DEG C to set heating platen temperature, and first small carrying substrates 302 are put on warm table and heat 15s, and in its upper table
Face coats one layer 60 μm of sealing wax binding agent 304 so that sealing wax melts and overlay area is more than or equal to ultrathin quartz substrate 301
Upper surface area, then face-up infiltrates ultrathin quartz substrate 301 with the sealing wax binding agent 304 on small carrying substrates 302
It is bonded, then natural cooling formation temporary bond body；Big carrying substrates 303 are heated to 15s at 180 DEG C again and in its upper surface
The sealing wax binding agent 304 of one layer 60 μm of coating so that sealing wax melts and overlay area is more than or equal to the upper table of small carrying substrates 302
Face area, big carrying base is subsequently placed at by the temporary bond body of ultrathin quartz substrate 301 and small carrying substrates 302 above and below
On piece 303, infiltrated and be bonded by sealing wax binding agent 304, last natural cooling formation ultrathin quartz substrate 301, small carrying substrates
302 with big carrying substrates 303 according to upper, middle and lower order temporary bond body.
Step 3, ultrathin quartz substrate is cut through using sand-wheel slice cutting machine, forms array circuit rectangular profile.
Sand-wheel slice cutting machine workpiece plate using vacuum suction mode will be formed ultrathin quartz substrate 301, small carrying substrates 302 with
Big carrying substrates 303 are fixed according to the temporary bond body of upper, middle and lower order, and the speed of mainshaft is set into 28000rpm, feeding speed
Degree is set to 5mm/s, and cutting-up depth is set to 0.15mm, and cutting position is found in the image unit identification of configuration, first along ultra-thin stone
The short side of the rectangular profile of English thin film circuit 312 is the parallel knife of cutting-up 6 of Y-direction shown in Fig. 3, forms 6 Y-direction joint-cuttings 311, then
It is the parallel knife of cutting-up 21 of X-direction shown in Fig. 3 along the long side of rectangular profile, forms 21 X-direction joint-cuttings 310, so far can be complete
Joint-cutting into the ultra-thin quartz thin film circuit 312 of 5 × 20 array formats is handled.
Step 4, ultra-thin quartz thin film circuit is separated with small carrying substrates, big carrying substrates respectively.
First with scalpel by the temporary bond body of ultrathin quartz substrate 301 and small carrying substrates 302 and big carrying substrates 303
The temporary bond body of ultrathin quartz substrate 301 and small carrying substrates 302, is then put into and fills in the culture dish with acetone by separation
10min is soaked, then both are separated.
Step 5, ultra-thin quartz thin film circuit is picked up, is cleaned and drying process.
After ultrathin quartz substrate 301 is separated with small carrying substrates 302 using solvent soaking, with No. zero writing brush writing brush of cleaning
Gently infiltration dips ultra-thin quartz thin film circuit 312 in spirituous culture dish is contained, and diameter 15cm qualitative filter is put in successively
On paper.On qualitative filter paper, first dip a small amount of acetone with No. zero writing brush writing brush and gently clean ultra-thin quartz thin film circuit 312 successively
Surface, then dries naturally, you can obtain the intact ultra-thin quartz thin film circuit 312 of cutting-up.
Although above-mentioned the embodiment of the present invention is described with reference to accompanying drawing, not to present invention protection model
The limitation enclosed, one of ordinary skill in the art should be understood that on the basis of technical scheme those skilled in the art are not
Need to pay various modifications or deform still within protection scope of the present invention that creative work can make.
Claims (8)
1. a kind of profile cutting-up for ultrathin quartz substrate thin film circuit and piece method is picked, it is characterized in that：Comprise the following steps：
(1) ultrathin quartz substrate, small carrying substrates and the big carrying substrates for forming array circuit figure are provided；
(2) treat the surface of cutting-up upward with small carrying substrates, big carrying substrates according to upper, middle and lower order ultrathin quartz substrate
Temporary bond is integrated；
(3) ultrathin quartz substrate is cut through, forms array circuit；
(4) ultra-thin quartz thin film array circuit is separated with small carrying substrates, big carrying substrates respectively；
(5) ultra-thin quartz thin film array circuit is picked up, is cleaned and drying process；
The specific method of the step (2) is：Small carrying substrates are first heated to 160~180 DEG C and one layer 30 is being coated thereon
Glued upward with the sealing wax on small carrying substrates on~100 μm of sealing wax binding agent, the surface that ultrathin quartz substrate is then treated into cutting-up
Agent infiltration is tied, then natural cooling formation temporary bond body；Big carrying substrates are heated 160~180 DEG C again and coated thereon
One layer 30~100 μm of sealing wax binding agent, by the temporary bond body of ultrathin quartz substrate and small carrying substrates according to order up and down
It is placed on big carrying substrates, is infiltrated by sealing wax, last natural cooling formation ultrathin quartz substrate, small carrying substrates and big carrying
The temporary bond body of substrate；
The specific method of the step (3) is：Ultrathin quartz substrate is cut through using sand-wheel slice cutting machine, is cut several times, shape
Rectangular ultra-thin quartz thin film array circuit, sand-wheel slice cutting machine workpiece plate first will form ultra-thin using vacuum suction mode during cutting-up
Quartz substrate, small carrying substrates are fixed with big carrying substrates according to the temporary bond body of upper, middle and lower order, then set main shaft
Cutting position is found in rotating speed, feed speed and cutting-up depth, the image unit identification of configuration, respectively along ultra-thin quartz thin film array
The short side of circuit rectangular profile and long side carry out Y-direction and X-direction carries out joint-cutting processing.
2. profile cutting-up as claimed in claim 1 and piece method is picked, it is characterized in that：The ultrathin quartz substrate is shaped as circle
Shape, rectangle, square or irregular shape, thickness are 30 μm -50 μm, and the area of plane is 1cm2-60cm2；The ultra-thin quartz is thin
The feature of film circuit is plane width >=100 μm, length-width ratio≤50：1.
3. profile cutting-up as claimed in claim 2 and piece method is picked, it is characterized in that：The front of the ultrathin quartz substrate is shape
Into array circuit patterned surface, the back side is the conduction without metal film surfaces, or to be made up of metal thin-film pattern and bonding region
Path surface, or be the thin film metallized ground plane of full plate.
4. profile cutting-up as claimed in claim 1 and piece method is picked, it is characterized in that：The planar dimension of the small carrying substrates is big
In equal to ultrathin quartz substrate appearance and size, being shaped as circular, rectangular or square, thickness is 0.254mm-0.65mm.
5. profile cutting-up as claimed in claim 1 and piece method is picked, it is characterized in that：The planar dimension of the big carrying substrates is big
In the size of small carrying substrates, circular, rectangular or square is shaped as, thickness is 0.5mm-1.5mm.
6. profile cutting-up as claimed in claim 1 and piece method is picked, it is characterized in that：The specific method of the step (4) is：First
Ultra-thin quartz thin film array circuit is separated with the temporary bond body of small carrying substrates with big carrying substrates, then by ultra-thin quartz
Membrane array circuit is separated with the temporary bond body of small carrying substrates with alcohol or acetone soak.
7. profile cutting-up as claimed in claim 1 and piece method is picked, it is characterized in that：In the step (5), ultra-thin quartz is picked up
The specific method of membrane array circuit is：Infiltrated with writing brush in alcohol or acetone and dip ultra-thin quartz thin film array circuit.
8. profile cutting-up as claimed in claim 1 and piece method is picked, it is characterized in that：In the step (5), clean and dry and be super
The method of thin quartz thin film array circuit is：Alcohol or acetone are first dipped with writing brush and gently cleans ultra-thin quartz thin film array circuit
Surface, then dries naturally.
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Address after: 266555 No. 98 Xiangjiang Road, Huangdao District, Qingdao City, Shandong Province Patentee after: CLP kesiyi Technology Co.,Ltd. Address before: 266555 No. 98 Xiangjiang Road, Huangdao District, Qingdao City, Shandong Province Patentee before: CHINA ELECTRONIC TECHNOLOGY INSTRUMENTS Co.,Ltd. |