CN110391182A - The processing method of chip - Google Patents
The processing method of chip Download PDFInfo
- Publication number
- CN110391182A CN110391182A CN201910283541.2A CN201910283541A CN110391182A CN 110391182 A CN110391182 A CN 110391182A CN 201910283541 A CN201910283541 A CN 201910283541A CN 110391182 A CN110391182 A CN 110391182A
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- Prior art keywords
- segmentation
- chip
- preset lines
- segmentation preset
- starting point
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- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 230000011218 segmentation Effects 0.000 claims abstract description 160
- 238000000034 method Methods 0.000 claims abstract description 102
- 230000008569 process Effects 0.000 claims abstract description 98
- 229920000098 polyolefin Polymers 0.000 claims abstract description 39
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 24
- 238000003825 pressing Methods 0.000 claims abstract description 23
- 229920000573 polyethylene Polymers 0.000 claims description 41
- 230000004048 modification Effects 0.000 claims description 15
- 238000012986 modification Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000002679 ablation Methods 0.000 claims description 6
- 239000004743 Polypropylene Substances 0.000 claims description 5
- 230000035699 permeability Effects 0.000 claims description 5
- -1 polypropylene Polymers 0.000 claims description 5
- 229920001155 polypropylene Polymers 0.000 claims description 5
- 239000004793 Polystyrene Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000011888 foil Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 8
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 description 23
- 238000010521 absorption reaction Methods 0.000 description 16
- 239000010410 layer Substances 0.000 description 15
- 239000012790 adhesive layer Substances 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 10
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 5
- 229920002554 vinyl polymer Polymers 0.000 description 5
- 230000032258 transport Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000005273 aeration Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
Abstract
The processing method of chip is provided, not will lead to device quality reduction.The processing method of chip includes at least following process: polyolefin piece lays process, and wafer orientation is laid polyolefin piece at the back side of chip and the periphery of frame in the opening of the frame with the opening stored to chip；Integrated process heats polyolefin piece and is thermally compressed and makes chip and frame integration by polyolefin piece；Divide starting point formation process, the focal point of laser beam is positioned at the first segmentation preset lines and the second segmentation preset lines and is irradiated, segmentation starting point is formed；Pressing sword is positioned at the first segmentation preset lines and assigns external force and be split to the first segmentation preset lines by the first segmentation process；And second segmentation process, pressing sword is positioned at the second segmentation preset lines and assigns external force and be split to the second segmentation preset lines, each device is divided the wafer by first segmentation process and second segmentation process.
Description
Technical field
The present invention relates to the processing methods of chip, divide the wafer into each device.
Background technique
Cutting dress is passed through by the chip that segmentation preset lines such as divided and be formed with IC, LSI, LED on front at multiple devices
Set, laser processing device etc. is divided into each device, and be used for the electronic equipments such as mobile phone, personal computer.
There are following types for laser processing device: by the focal point of the laser beam of the wavelength for chip with permeability
It is positioned at the inside of segmentation preset lines and is irradiated, form modification layer as the type of the starting point of segmentation (for example, referring to special
Sharp document 1)；The focal point for the laser beam for having absorbent wavelength for chip is positioned to the upper surface of segmentation preset lines
And be irradiated, slot is formed on front by ablation as the type of the starting point of segmentation (for example, referring to patent document
2)。
After forming the starting point of segmentation along segmentation preset lines by above-mentioned laser processing device, chip is implemented to assign
It gives the segmentation process of external force etc. and is divided into each device.Have passed through the chip of segmentation process be divided into each device it
Afterwards, it is transported to pickup process in the state of being held in dicing tape and keep Spherulite, therefore puts into laser processing
The chip of device passes through the opening for being positioned at the frame with the opening stored to chip and by the back side of chip and frame
Frame is pasted onto coating paste etc. and is formed with the adhesive layer side of the dicing tape of adhesive layer, to become and dicing tape and frame are realized
Integrated state.The chip that have passed through segmentation process as a result, can not take off in each obtained device of dividing from dicing tape
From and keep in the state of the form of chip conveying to pickup process.
Patent document 1: No. 3408805 bulletins of Japanese Patent Publication No.
Patent document 2: Japanese Unexamined Patent Publication 10-305420 bulletin
Will press sword be positioned at be formed with the segmentation preset lines of segmentation starting point and assign external force and to by the back side of chip
The case where being positioned with frame and being pasted on the adhesive layer side of dicing tape and be split by the chip that dicing tape is supported on frame
Under, will press sword be positioned at the first segmentation preset lines formed along first direction and assign external force and after being divided,
Sword will be pressed to be positioned at the second segmentation preset lines along the second direction formation intersected with first direction and assign external force and carry out
Segmentation.At this point, the first segmentation preset lines first divided being capable of clean and tidy Ground Split.But when point along the first segmentation preset lines
When cutting starting point and being split and form cut-off rule, adhesive layer enters to the cut-off rule etc. and causes second not yet divided segmentation pre-
Traveling that alignment is slight curving, to be difficult to be precisely oriented pressing sword along the second segmentation preset lines, when in the case to pressing
When pressure sword is positioned and assigned external force and is split to the second segmentation preset lines, has the following problems: generating device
Defect etc. and the reduction for leading to quality.In recent years, it is desirable that the small size (below 2mm square) of device is changed, and especially 0.5mm is shown in
Side, 0.25mm square, 0.15mm square etc., the size of device is smaller, what the bending slightly of the second segmentation preset lines was advanced
It influences more significant.
Summary of the invention
The present invention is to complete in view of the above fact, and main technical task is to provide the processing method of chip,
Even if pressing sword is positioned at segmentation preset lines and assigns external force and divides the wafer into each device, device will not be caused
The reduction of quality.
In order to solve above-mentioned main technical task, according to the present invention, the processing method of chip is provided, is divided the wafer into
Each device, the second direction which is intersected by the first segmentation preset lines formed along first direction and edge with the first direction
The the second segmentation preset lines formed divide and are formed with multiple devices on front, wherein the processing method of the chip is at least wrapped
Containing following process: polyolefin piece lays process, by wafer orientation in the frame with the opening stored to chip
Polyolefin piece is laid at the back side of chip and the periphery of frame in the opening；Integrated process carries out polyolefin piece
It heats and is thermally compressed and chip and frame integration are made by polyolefin piece；Divide starting point formation process, by laser light
The focal point of line is positioned at the first segmentation preset lines and the second segmentation preset lines and is irradiated, and forms segmentation starting point；First point
Process is cut, pressing sword is positioned at the first segmentation preset lines and assigns external force and the first segmentation preset lines is split；And
Pressing sword is positioned at the second segmentation preset lines and assigns external force and divide the second segmentation preset lines by the second segmentation process
It cuts, each device is divided the wafer by first segmentation process and second segmentation process.
It can make the wavelength of the laser beam irradiated in the segmentation starting point formation process that there is permeability for chip,
The focal point of the laser beam is positioned at the inside of the first segmentation preset lines and the second segmentation preset lines and is formed as segmentation
The modification layer of starting point.Alternatively, it is also possible to make the wavelength of the laser beam irradiated in the segmentation starting point formation process for crystalline substance
Piece has absorbability, and the focal point of the laser beam is positioned to the upper surface of the first segmentation preset lines and the second segmentation preset lines
And the slot as segmentation starting point is formed by ablation.
It is preferred that any piece of the polyolefin piece in polythene strip, polypropylene foil, polystyrene sheet.In addition, the crystalline substance
Piece can be made of any substrate in silicon substrate, sapphire substrate, silicon carbide substrate, glass substrate.
The processing method of chip of the invention divides the wafer into each device, the chip by formed along first direction
The second segmentation preset lines that one segmentation preset lines and edge are formed with the second direction that the first direction intersects divide and on front
It is formed with multiple devices, wherein the processing method of the chip includes at least following process: polyolefin piece lays process, will
Wafer orientation is in the opening of the frame with the opening stored to chip and in the periphery at the back side of chip and frame
Lay polyolefin piece；Integrated process heats polyolefin piece and is thermally compressed and is made by polyolefin piece
Chip and frame integration；Divide starting point formation process, the focal point of laser beam is positioned at the first segmentation preset lines and the
Two divide preset lines and are irradiated, and form segmentation starting point；Pressing sword is positioned at the first segmentation preset lines by the first segmentation process
And it assigns external force and the first segmentation preset lines is split；And second segmentation process, pressing sword is positioned at the second segmentation
Preset lines simultaneously assign external force and divide preset lines to second and be split, and pass through first segmentation process and second segmentation process
Divide the wafer into each device, thus will not be as using the dicing tape with adhesive layer to paste chip the case where adhesive layer
A part enter to the first region for divide of segmentation preset lines and cause offset, to first divide preset lines into
After row segmentation, pressing sword can be precisely oriented and divide preset lines in second, overcome the problems, such as to make the quality of device to reduce.
Detailed description of the invention
Fig. 1 is the perspective view for showing the embodiment of polyolefin piece laying process of the present embodiment.
Fig. 2 is to show in polyolefin piece laying process shown in Fig. 1 polyolefin piece being placed in chuck table
Mode perspective view.
(a) and (b) of Fig. 3 is the perspective view for showing the embodiment of integrated process of the present embodiment.
Fig. 4 is the perspective view for showing the embodiment of cut off operation of the present embodiment.
(a) and (b) of Fig. 5 is the perspective view for showing an embodiment of segmentation starting point formation process of the present embodiment.
(a) and (b) of Fig. 6 is the perspective view for showing the other embodiments of segmentation starting point formation process of the present embodiment.
Fig. 7 is the side view for showing the embodiment of segmentation process of the present embodiment.
Label declaration
10: chip；12A: the first segmentation preset lines；12B: the second segmentation preset lines；14: device；20: chuck table；
21: absorption chuck；30: polythene strip；40: heat blow unit；50: heating roller unit；52: heating roller；60: cutting unit；
62: cutter cutter；70,70 ': laser processing device；72: condenser；80: segmenting device；82: pressing sword；83: a pair of bearing
Portion；100: modification layer；110: slot；130: cut-off rule.
Specific embodiment
Hereinafter, being illustrated in order to each process of the processing method of the chip constituted according to the present invention.
(polyolefin piece lays process)
Referring to Figures 1 and 2, polyolefin piece laying process is illustrated.Polyolefin piece laying work is shown in FIG. 1
The perspective view of the embodiment of sequence.When implementing polyolefin piece laying process, first as shown in Figure 1, preparing as processing pair
As the chip 10 of object, the ring-shaped frame F with the opening Fa that can be stored to chip 10 and for implementing polyolefin
The chuck table 20 of piece laying process.Chip 10 is for example made of silicon (Si) substrate, and device 14 is formed in as along shown in arrow X
The first segmentation preset lines 12A for being formed of first direction and second shown in the arrow Y that at right angles intersects with first direction
On the positive 10a that the second segmentation preset lines 12B that direction is formed is divided.
Chuck table 20 includes: the absorption chuck 21 of disc-shape, by the porous pottery of the Porous with aeration
Porcelain is constituted；And round frame portion 22, around the periphery of absorption chuck 21, chuck table 20 and attraction unit (not shown) connect
It connects and attracting holding can be carried out to the chip 10 for the upper surface (retaining surface) for being placed in absorption chuck 21.
If having prepared chip 10, frame F and chuck table 20, as shown, the guarantor relative to absorption chuck 21
Face is held, the positive side 10a of chip 10 is made to be placed in the center for adsorbing chuck 21 downward.If chip 10 is placed in absorption chuck
On 21, then frame F is placed on absorption chuck 21 while chip 10 to be positioned to the center of opening Fa.By Tu Keli
Solution, the size of the opening Fa of frame F forms bigger than chip 10, to be stored to chip 10, in addition, absorption chuck 21
The size of retaining surface forms more bigger than the shape of frame F, and the retaining surface for being set to absorption chuck 21 is exposed in the outside of frame F
Size.
As shown in Fig. 2, prepare circular polyolefin piece such as polyethylene (PE) piece 30, the polyolefin piece is according to will be brilliant
The mode that back side 10b, the frame F and absorption chuck 21 of piece 10 are covered is set, and is placed on absorption chuck 21.Polyolefin
Piece is preferably formed with 20 μm~100 μm of thickness.By Fig. 2 it is understood that the polythene strip 30 of the present embodiment is at least than adsorbing chuck
21 diameter is big, is preferably formed according to the smaller diameter of the shape of the round frame portion 22 than chuck table 20.Absorption card as a result,
The entire retaining surface of disk 21 is covered by polythene strip 30.In addition, in the mounting for being placed in chip 10 and frame F of polythene strip 30
The adhesive layers such as the not formed paste in surface side.
If chip 10, frame F and polythene strip 30 are placed on the absorption chuck 21 of chuck table 20, make to wrap
Attraction unit (not shown) containing suction pump etc. is acted and attraction Vm is acted on absorption chuck 21, thus to chip
10, frame F and polythene strip 30 are attracted.As described above, by polythene strip 30 covering absorption chuck 21 it is entire on
Surface (retaining surface), therefore attraction Vm acts on the entirety of chip 10, frame F and polythene strip 30, they are attracted and is protected
It is held on absorption chuck 21, and the air remained between chip 10, frame F and polythene strip 30 is attracted and is made
They are close to.By the above, completing polyolefin piece lays process.
(integrated process)
If implementing above-mentioned polyolefin piece laying process, then implement integrated process.Referring to Fig. 3 to integration
Process is illustrated.
First embodiment for implementing integrated process is shown in (a) of Fig. 3.Implementing integrated process
When, as shown, the heat blow unit 40 (only showing a part) for being used to heat polythene strip 30 is positioned at pair
Chip 10, frame F and polythene strip 30 act on attraction Vm and carry out the state of attracting holding chuck table 20 it is upper
Side.Detailed content is omitted, heat blow unit 40 is configured in the outlet side (in figure downside) opposed with 20 side of chuck table
The heater portion with temperature adjustment units such as thermostats is arranged, is arranged in opposite side (upside in figure) through motor etc.
The fan portion driven blows hot wind L towards chuck table 20 and driving to the heater portion and fan portion.
It is at least poly- to being placed with by heat blow unit 40 if heat blow unit 40 to be positioned to the top of chuck table 20
The whole region of chip 10 and frame F that piece of vinyl 30 is covered blows hot wind L, 120 near fusing point DEG C~140 DEG C or
From the temperature near the fusing point in the range of the temperature than low 50 DEG C of temperature or so near the fusing point to polythene strip 30 into
Row heating.By the heating, polythene strip 30 softens, and is close in polythene strip 30 with the back side 10b of chip 10 and frame F
In the state of be thermally compressed, to make chip 10, frame F and the integration of polythene strip 30.In addition, implementing to polythene strip
The unit of the 30 integrated processes for carrying out heating and being thermally compressed with chip 10 is not limited to heat blow shown in (a) of Fig. 3
Unit 40 also can choose other units.Referring to (b) of Fig. 3, other units (second embodiment) are illustrated.
As other units for implementing above-mentioned integrated process, heating roller unit 50 shown in (b) of Fig. 3 can choose
(a part is only shown).More specifically, the heating roller unit 50 that will be used to that polythene strip 30 to be heated and pressed
It is positioned at and is acted on by attraction Vm and carries out the chucking work of the state of attracting holding for chip 10, frame F and polythene strip 30
The top of platform 20.Detailed content is omitted, heating roller unit 50 has the heating roller 52 of built-in heater (not shown) and is used for
The rotary shaft (not shown) for rotating heating roller 52, the surface of heating roller 52 are carried out fluororesin processing.If heating roller 52 is determined
Positioned at the top of chuck table 20, then the heater for being built in heating roller 52 is acted, polythene strip 30 is covered
The side back side 10b and frame F of the chip 10 of lid is integrally pressed and revolves 52 one side of heating roller to direction shown in arrow R1
Turn to move in the direction of the arrowx on one side.The heater for being built in heating roller 52 is adjusted to polythene strip 30 as near fusing point
120 DEG C~140 DEG C or from the temperature near the fusing point to the model than low 50 DEG C of temperature or so of temperature near the fusing point
It encloses.It, can be at the back side of polythene strip 30 and chip 10 in the same manner as above-mentioned heat blow unit 40 by the heating and pressing
10b and frame F is thermally compressed in the state of being tightly attached to, to make 30 integration of chip 10, frame F and polythene strip.Separately
Outside, the variation as the heating roller unit 50 for implementing integrated process, also can replace above-mentioned heating roller 52, and use tool
The flat pressing component of having heaters, heats polythene strip 30, is pressed, and 30 hot pressing of polythene strip is connected to crystalline substance
Piece 10 and frame F.In addition, the unit being thermally compressed is not limited to above-mentioned each unit, such as can also be by irradiating infrared ray
And heating is carried out to be thermally compressed with frame 10 and frame F to polythene strip 30.
In the present embodiment, after above-mentioned integrated process, it is contemplated that subsequent handling is implemented cut off operation, will be gathered
Piece of vinyl 30 is cut off along frame F.In addition, the cut off operation is not necessarily necessary process, but implement the cut off operation then with it is poly-
The integrated chip 10 of piece of vinyl 30 and frame F are easier to operate to, and are conducive to carry out subsequent handling.Hereinafter, referring to Fig. 4 to cutting
Process is illustrated.
(cut off operation)
As shown in figure 4, cutting unit 60 (only showing a part) is positioned on chuck table 20, the chuck table
20 pairs carry out attracting holding by the integrated chip 10 of integrated process, frame F and polythene strip 30.Cutting unit 60
Cutter cutter 62 (being shown with double dot dash line) with the disc-shape for cutting off polythene strip 30 and for making knife
Tool cutter 62 rotates the motor (not shown) of driving on the direction shown in arrow R2, the blade tip of cutter cutter 62 is determined
The substantial middle of width direction on frame F.If cutter cutter 62 is positioned on frame F, by cutter cutter
62 carry out incision feeding according to the thickness of polythene strip 30, rotate chuck table 20 on the direction shown in arrow R2.By
This, can by polythene strip 30 along the cutting line C cutting along frame F and will the polythene strip 30 that leant out from cutting line C it is outer
Week excision.In addition, polythene strip 30 is hot pressed the back side 10b and frame F for being connected to chip 10, so as to maintain chip 10, frame
Frame F and the integrated state of polythene strip 30.By the above, completing cut off operation.
(segmentation starting point formation process)
If the periphery of polythene strip 30 is cut off by the cut off operation, implement segmentation starting point using laser processing device
Formation process.It as the laser processing for implementing to divide starting point formation process, such as can choose following method: making laser
The wavelength of light is the wavelength for having permeability for chip, and the focal point of laser beam is positioned at the first segmentation preset lines
12A and second divides the inside of preset lines 12B and forms the method for modifying layer as segmentation starting point；Or make the wave of laser beam
It is a length of to have absorbent wavelength for chip, the focal point of laser beam is positioned at the first segmentation preset lines 12A and second
The method divided the upper surface of preset lines 12B and form the slot as segmentation starting point by ablation.
Referring to Fig. 5, the inside that the segmentation of preset lines 12A and second preset lines 12B is divided the first of chip 10 is formed and is made
Embodiment for the laser processing of the modification layer of segmentation starting point is illustrated.
It is formed when in the inside of the first segmentation preset lines 12A and the second segmentation preset lines 12B as the modification for dividing starting point
When layer, laser beam is irradiated from the back side side 10b of chip 10.Therefore, as shown in (a) of Fig. 5, make in above-mentioned integrated process
The back side side 10b for realizing integrated chip 10 with frame F upward, make 30 side of polythene strip become top and transport to
Laser processing device 70 (only showing a part) shown in (b) of Fig. 5.
Laser processing device 70 shown in (b) of Fig. 5 is known laser processing device, omits detailed content, and laser adds
Tooling, which sets 70, has chuck table (not shown) and the laser light irradiation unit comprising condenser 72 etc..It transports to laser
The chip 10 of processing unit (plant) 70 loads in such a way that polythene strip 30 becomes top and is held in the chuck table.Then,
By the aligned units with infrared ray shooting unit (not shown), swashing for the condenser 72 of the laser light irradiation unit is carried out
The irradiation position of light light LB and processed position, i.e., the first segmentation preset lines 12A and the second segmentation preset lines 12B of chip 10
Contraposition (alignment process).If terminating the alignment process, such as shown in (b) of Fig. 5, the focal point of laser beam LB is positioned at
The inside of chip 10 makes condenser 72 and chip 10 relatively move through polythene strip 30 in a direction shown by the arrowx
It is irradiated, forms the modification layer 100 as segmentation starting point along the first segmentation preset lines 12A.If by making the chucking work
Platform suitably moves and forms modification layer 100 along the first all segmentation preset lines 12A, then is rotated by 90 ° the chuck table
And in the same manner as the first segmentation preset lines 12A, modification layer 100 is formed in the inside of chip 10 along the second segmentation preset lines 12B.
By the laser processing more than implementing, segmentation starting point formation process is completed.
In addition, laser processing condition of the above-mentioned formation as the laser processing device 70 of the modification layer 100 of segmentation starting point
Such as following setting.
Segmentation starting point formation process of the invention is not limited to above-mentioned unit, such as laser shown in fig. 6 also can be used
Processing unit (plant) 70 ' is implemented.Hereinafter, implementing its of segmentation starting point formation process to laser processing device 70 ' is used referring to Fig. 6
He is illustrated embodiment.
Conduct is formed on the positive 10a of chip 10 when dividing preset lines 12B along the first segmentation preset lines 12A and second
When dividing the slot of starting point, as shown in (a) of Fig. 6, make in above-mentioned integrated process with the integrated chip 10 of frame F just
Laser processing device 70 ' (only showing a part) shown in (b) that the face side 10a is transported as top to Fig. 6.
Laser processing device 70 ' is known laser processing device, omits detailed content, and laser processing device 70 ' has
Chuck table (not shown) and the laser light irradiation unit comprising condenser 72 ' etc., conveying to laser processing device 70 '
Chip 10 loads in such a way that the positive 10a of chip 10 becomes top and attracting holding is in the chuck table.Then, pass through
Aligned units with shooting unit (not shown), carry out the irradiation position of the condenser 72 ' of the laser light irradiation unit with
The contraposition (alignment process) of the Working position of chip 10, i.e., the first segmentation preset lines 12A and the second segmentation preset lines 12B.If knot
The focal point of laser beam LB ' is positioned on the positive 10a of chip 10 by beam alignment process then as shown in (b) of Fig. 6, on one side
Make condenser 72 ' and chip 10 are relatively mobile in a direction shown by the arrowx to irradiate laser beam LB ' on one side and implement ablation
Processing.It is formed and moving the chuck table suitably along the first segmentation preset lines 12A and the second segmentation preset lines 12B
Slot 110 as segmentation starting point.By above laser processing, segmentation starting point formation process is completed.
In addition, the laser processing condition of laser processing device 70 ' of the above-mentioned formation as the slot 110 for dividing starting point is for example
Following setting.
Segmentation starting point formation process of the invention is not limited to implement above-mentioned laser processing, also can choose other lists
Member.For example, it can be from the back side side 10b by for chip 10 have permeability wavelength laser beam optically focused point location
Be irradiated in the inside of chip 10, formed along the first segmentation preset lines 12A and the second segmentation preset lines 12B by pore and
Around the shield tunnel that the noncrystalline of pore is constituted as the starting point of segmentation.
(segmentation process)
If implementing segmentation starting point formation process as described above, implement segmentation process.In addition, to above-mentioned by implementing
Segmentation starting point formation process and along first segmentation preset lines 12A and second segmentation preset lines 12B chip 10 inside shape
It is illustrated at the case where implementing segmentation process described below after the modification layer 100 as segmentation starting point.
The segmentation process of the present embodiment includes at least: assigning external force to the first segmentation preset lines 12A and divides to first pre-
The first segmentation process that alignment is split；And external force is assigned to the second segmentation preset lines 12B and divides preset lines to second
The second segmentation process that 12B is split.Referring to Fig. 7, the segmentation process for using segmenting device 80 and implementing is illustrated.
Segmenting device 80 shown in Fig. 7 at least has pressing sword 82, a pair of support parts 83 and shooting unit (not shown).
When implementing the first segmentation process, make the positive 10a of chip 10 that chip 10 are placed in a pair of support parts 83 downward.It should
Shooting unit be configured to from the positive side 10a for the chip 10 for being placed in a pair of support parts 83, i.e. lower side to chip 10 into
Row shooting is shot by the first segmentation preset lines 12A of the shooting unit to chip 10, so that modification layer will be formed with
100 the first segmentation preset lines 12A is positioned exactly between a pair of support parts 83 and is positioned at the underface of pressing sword 82.One
To extending on supporting part 83 in one direction (being the Y-direction vertical with paper in Fig. 7), clip according to when overlooking along this
The mode of first segmentation preset lines 12A of direction positioning is positioned.It is positioned at the pressing sword 82 of the top of a pair of support parts 83
Also it is upwardly extended in the same manner as a pair of support parts 83 in a side, through pressing mechanism (not shown) shown in the arrow Z
Upper and lower moves up.
As shown in fig. 7, making pressing sword 82 drop to 10 side of chip along arrow Z, thus to modify layer 100 as segmentation starting point
And chip 10 is split along the first segmentation preset lines 12A, form cut-off rule 130.Then, in direction shown by arrow X
On make to press sword 82 and a pair of support parts 83 and chip 10 relatively moves and carries out processing feeding, thus by undivided first
Segmentation preset lines 12A is moved to the underface of pressing sword 82 and is moved between a pair of support parts 83, repeats similarly to divide
Processing is cut, sword 82 will be pressed and be pressed into the first all segmentation preset lines 12A and assign external force and form cut-off rule 130.Also,
It is rotated by 90 ° chip 10, it is using the shooting unit, the second segmentation preset lines 12B for being formed with modification layer 100 is accurately fixed
Positioned at pressing sword 82 underface and be positioned between a pair of support parts 83, by with to it is above-mentioned first segmentation preset lines 12A into
The same process of process of row segmentation is split and forms cut-off rule 130.By the above, chip 10 is divided into each device
14, complete segmentation process.In addition, to preset lines 12B is being divided in chip 10 along the first segmentation preset lines 12A and second
Portion is formed to be illustrated as the case where implementing above-mentioned segmentation process after the modification layer 100 for dividing starting point, but is being divided
In starting point formation process, formed on the positive 10a of the first segmentation preset lines 12A and the second segmentation preset lines 12B by ablation
In the case where slot 110 as segmentation starting point, it can be also split by unit similar to the above.
If completing the segmentation process, transport together with the frame F kept to chip 10 to pickup process, from poly-
Piece of vinyl 30 picks up each device 14, conveying to bonding process or is accommodated in collecting pallet etc. and transports to subsequent handling.
It is (poly- for chip 10, frame F and polyolefin piece according to the processing method of the chip of above-mentioned the present embodiment
Piece of vinyl 30), integration is carried out not over the adhesive layer formed in polyolefin piece surface coating paste etc., but extremely
It is few that polyolefin piece is heated and is thermally compressed and integration is carried out to chip 10 and frame F.It as a result, will not be as having
The case where dicing tape of adhesive layer generates like that causes since a part of adhesive layer enters to the region (cut-off rule) of segmentation
Pressing sword 82 can be precisely oriented in second by the problem of offset etc. after being split to the first segmentation preset lines 12A
Divide preset lines 12B, the quality of device will not be made to reduce.
In addition, according to the present invention, being not limited to above embodiment, it is possible to provide various modifications example.In the above-described embodiment,
Select polythene strip 30 as polyolefin piece, however, the present invention is not limited thereto can suitably be selected from polyolefin piece.As
Other polyolefin pieces, such as can be any one in polypropylene (PP) piece or polystyrene (PS) piece.
In the above-described embodiment, 120 DEG C~140 heating temperature in integrated process is set as near fusing point
DEG C or from the temperature near the fusing point to the range than low 50 DEG C of temperature or so of temperature near the fusing point, but the present invention is not
It is limited to this, heating temperature is preferably set according to the type of selected polyolefin piece.Such as select polypropylene foil as
In the case where polyolefin piece, preferably heating temperature is set as near fusing point 160 DEG C~180 DEG C or near the fusing point
Temperature to than low 50 DEG C of temperature or so of temperature near the fusing point range.In addition, select polystyrene sheet as poly-
In the case where olefin-based piece, preferably heating temperature is set as near fusing point 220 DEG C~240 DEG C or near the fusing point
Temperature is extremely than the range of low 50 DEG C of temperature or so of temperature near the fusing point.
In the above-described embodiment, make chip silicon (Si) substrate as workpiece, however, the present invention is not limited thereto,
Also it may be constructed as by other materials, such as sapphire (Al2O2) substrate, silicon carbide (SiC) substrate, glass (SiO2) substrate structure
At.
Claims (5)
1. a kind of processing method of chip, divides the wafer into each device, the chip is by formed along first direction first point
It cuts preset lines and divides along the second segmentation preset lines that the second direction intersected with the first direction is formed and formed on front
There are multiple devices, wherein
The processing method of the chip includes at least following process:
Polyolefin piece lays process, by wafer orientation in the opening with the frame of opening stored to chip and
Polyolefin piece is laid at the back side of chip and the periphery of frame；
Integrated process heats polyolefin piece and is thermally compressed and makes chip and frame one by polyolefin piece
Body；
Divide starting point formation process, by the focal point of laser beam be positioned at the first segmentation preset lines and second segmentation preset lines and
It is irradiated, forms segmentation starting point；
Pressing sword is positioned at the first segmentation preset lines and assigns external force and carry out to the first segmentation preset lines by the first segmentation process
Segmentation；And
Pressing sword is positioned at the second segmentation preset lines and assigns external force and carry out to the second segmentation preset lines by the second segmentation process
Segmentation,
Each device is divided the wafer by first segmentation process and second segmentation process.
2. the processing method of chip according to claim 1, wherein
The wavelength of the laser beam irradiated in the segmentation starting point formation process has permeability for chip, by the laser light
The focal point of line is positioned at the inside of the first segmentation preset lines and the second segmentation preset lines and forms the modification as segmentation starting point
Layer.
3. the processing method of chip according to claim 1, wherein
The wavelength of the laser beam irradiated in the segmentation starting point formation process has absorbability for chip, by the laser light
The focal point of line be positioned at the first segmentation preset lines and second segmentation preset lines upper surface and formed by ablation as point
Cut the slot of starting point.
4. according to claim 1 to the processing method of chip described in any one in 3, wherein
Any piece of the polyolefin piece in polythene strip, polypropylene foil, polystyrene sheet.
5. according to claim 1 to the processing method of chip described in any one in 4, wherein
The chip is made of any substrate in silicon substrate, sapphire substrate, silicon carbide substrate, glass substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018081725A JP2019192717A (en) | 2018-04-20 | 2018-04-20 | Method of processing wafer |
| JP2018-081725 | 2018-04-20 |
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| CN110391182A true CN110391182A (en) | 2019-10-29 |
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| JP (1) | JP2019192717A (en) |
| KR (1) | KR20190122551A (en) |
| CN (1) | CN110391182B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111516161A (en) * | 2020-04-13 | 2020-08-11 | 江苏高照新能源发展有限公司 | Preparation method of pulley sheet of diamond wire cutting machine |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7282452B2 (en) | 2019-02-15 | 2023-05-29 | 株式会社ディスコ | Wafer processing method |
| JP7282453B2 (en) | 2019-02-15 | 2023-05-29 | 株式会社ディスコ | Wafer processing method |
| JP7282455B2 (en) | 2019-03-05 | 2023-05-29 | 株式会社ディスコ | Wafer processing method |
| JP7277019B2 (en) | 2019-03-05 | 2023-05-18 | 株式会社ディスコ | Wafer processing method |
| JP2020174100A (en) | 2019-04-10 | 2020-10-22 | 株式会社ディスコ | Wafer processing method |
| JP7313767B2 (en) | 2019-04-10 | 2023-07-25 | 株式会社ディスコ | Wafer processing method |
| JP7330616B2 (en) | 2019-05-10 | 2023-08-22 | 株式会社ディスコ | Wafer processing method |
| JP7330615B2 (en) | 2019-05-10 | 2023-08-22 | 株式会社ディスコ | Wafer processing method |
| JP7286247B2 (en) | 2019-06-07 | 2023-06-05 | 株式会社ディスコ | Wafer processing method |
| JP7286245B2 (en) | 2019-06-07 | 2023-06-05 | 株式会社ディスコ | Wafer processing method |
| JP7305268B2 (en) | 2019-08-07 | 2023-07-10 | 株式会社ディスコ | Wafer processing method |
| JP7345973B2 (en) | 2019-08-07 | 2023-09-19 | 株式会社ディスコ | Wafer processing method |
| JP7341607B2 (en) | 2019-09-11 | 2023-09-11 | 株式会社ディスコ | Wafer processing method |
| JP7341606B2 (en) | 2019-09-11 | 2023-09-11 | 株式会社ディスコ | Wafer processing method |
| JP7383338B2 (en) | 2019-10-10 | 2023-11-20 | 株式会社ディスコ | Wafer processing method |
| JP2021064627A (en) | 2019-10-10 | 2021-04-22 | 株式会社ディスコ | Wafer processing method |
| JP7387228B2 (en) | 2019-10-17 | 2023-11-28 | 株式会社ディスコ | Wafer processing method |
| JP7301480B2 (en) | 2019-10-17 | 2023-07-03 | 株式会社ディスコ | Wafer processing method |
| JP7430515B2 (en) * | 2019-11-06 | 2024-02-13 | 株式会社ディスコ | Wafer processing method |
| JP2021077720A (en) * | 2019-11-07 | 2021-05-20 | 株式会社ディスコ | Wafer processing method |
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| CN110391182B (en) | 2024-08-20 |
| TW201944485A (en) | 2019-11-16 |
| KR20190122551A (en) | 2019-10-30 |
| JP2019192717A (en) | 2019-10-31 |
| TWI785231B (en) | 2022-12-01 |
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