CN110391139A - The processing method of chip - Google Patents
The processing method of chip Download PDFInfo
- Publication number
- CN110391139A CN110391139A CN201910288187.2A CN201910288187A CN110391139A CN 110391139 A CN110391139 A CN 110391139A CN 201910288187 A CN201910288187 A CN 201910288187A CN 110391139 A CN110391139 A CN 110391139A
- Authority
- CN
- China
- Prior art keywords
- segmentation
- chip
- preset lines
- segmentation preset
- starting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 230000011218 segmentation Effects 0.000 claims abstract description 167
- 238000000034 method Methods 0.000 claims abstract description 100
- 230000008569 process Effects 0.000 claims abstract description 96
- 229920000728 polyester Polymers 0.000 claims abstract description 39
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 26
- 238000003825 pressing Methods 0.000 claims abstract description 21
- -1 polyethylene terephthalate Polymers 0.000 claims description 44
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 40
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 40
- 230000004048 modification Effects 0.000 claims description 15
- 238000012986 modification Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000002679 ablation Methods 0.000 claims description 7
- 230000035699 permeability Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 6
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 description 20
- 238000010521 absorption reaction Methods 0.000 description 15
- 239000010410 layer Substances 0.000 description 15
- 239000012790 adhesive layer Substances 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- FYIBGDKNYYMMAG-UHFFFAOYSA-N ethane-1,2-diol;terephthalic acid Chemical compound OCCO.OC(=O)C1=CC=C(C(O)=O)C=C1 FYIBGDKNYYMMAG-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The processing method of chip is provided, not will lead to device quality reduction.The processing method of chip includes at least following process: polyester sheet lays process, and wafer orientation is laid polyester sheet at the back side of chip and the periphery of frame in the opening of the frame with the opening stored to chip；Integrated process heats polyester sheet and is thermally compressed and makes chip and frame integration by polyester sheet；Divide starting point formation process, the focal point of laser beam is positioned at the first segmentation preset lines and the second segmentation preset lines and is irradiated, segmentation starting point is formed；Pressing sword is positioned at the first segmentation preset lines and assigns external force and be split to the first segmentation preset lines by the first segmentation process；And second segmentation process, pressing sword is positioned at the second segmentation preset lines and assigns external force and be split to the second segmentation preset lines, each device is divided the wafer by first segmentation process and second segmentation process.
Description
Technical field
The present invention relates to the processing methods of chip, divide the wafer into each device.
Background technique
Cutting dress is passed through by the chip that segmentation preset lines such as divided and be formed with IC, LSI, LED on front at multiple devices
Set, laser processing device etc. is divided into each device, and be used for the electronic equipments such as mobile phone, personal computer.
There are following types for laser processing device: by the focal point of the laser beam of the wavelength for chip with permeability
It is positioned at the inside of segmentation preset lines and is irradiated, form modification layer as the type of the starting point of segmentation (for example, referring to special
Sharp document 1)；The focal point for the laser beam for having absorbent wavelength for chip is positioned to the upper surface of segmentation preset lines
And be irradiated, slot is formed on front by ablation as the type of the starting point of segmentation (for example, referring to patent document
2)。
After forming the starting point of segmentation along segmentation preset lines by above-mentioned laser processing device, chip is implemented to assign
It gives the segmentation process of external force etc. and is divided into each device.Have passed through the chip of segmentation process be divided into each device it
Afterwards, it is transported to pickup process in the state of being held in dicing tape and keep Spherulite, therefore puts into laser processing
The chip of device passes through the opening for being positioned at the frame with the opening stored to chip and by the back side of chip and frame
Frame is pasted onto coating paste etc. and is formed with the adhesive layer side of the dicing tape of adhesive layer, to become and dicing tape and frame are realized
Integrated state.The chip that have passed through segmentation process as a result, can not take off in each obtained device of dividing from dicing tape
From and keep in the state of the form of chip conveying to pickup process.
Patent document 1: No. 3408805 bulletins of Japanese Patent Publication No.
Patent document 2: Japanese Unexamined Patent Publication 10-305420 bulletin
Will press sword be positioned at be formed with the segmentation preset lines of segmentation starting point and assign external force and to by the back side of chip
The case where being positioned with frame and being pasted on the adhesive layer side of dicing tape and be split by the chip that dicing tape is supported on frame
Under, will press sword be positioned at the first segmentation preset lines formed along first direction and assign external force and after being divided,
Sword will be pressed to be positioned at the second segmentation preset lines along the second direction formation intersected with first direction and assign external force and carry out
Segmentation.At this point, the first segmentation preset lines first divided being capable of clean and tidy Ground Split.But when point along the first segmentation preset lines
When cutting starting point and being split and form cut-off rule, adhesive layer enters to the cut-off rule etc. and causes second not yet divided segmentation pre-
Traveling that alignment is slight curving, to be difficult to be precisely oriented pressing sword along the second segmentation preset lines, when in the case to pressing
When pressure sword is positioned and assigned external force and is split to the second segmentation preset lines, has the following problems: generating device
Defect etc. and the reduction for leading to quality.In recent years, it is desirable that the small size (below 2mm square) of device is changed, and especially 0.5mm is shown in
Side, 0.25mm square, 0.15mm square etc., the size of device is smaller, what the bending slightly of the second segmentation preset lines was advanced
It influences more significant.
Summary of the invention
The present invention is to complete in view of the above fact, and main technical task is to provide the processing method of chip,
Even if pressing sword is positioned at segmentation preset lines and assigns external force and divides the wafer into each device, device will not be caused
The reduction of quality.
In order to solve above-mentioned main technical task, according to the present invention, the processing method of chip is provided, is divided the wafer into
Each device, the second direction which is intersected by the first segmentation preset lines formed along first direction and edge with the first direction
The the second segmentation preset lines formed divide and are formed with multiple devices on front, wherein the processing method of the chip is at least wrapped
Containing following process: polyester sheet lays process, by wafer orientation being somebody's turn to do in the frame with the opening stored to chip
Polyester sheet is laid at the back side of chip and the periphery of frame in opening；Integrated process, heats simultaneously polyester sheet
It is thermally compressed and chip and frame integration is made by polyester sheet；Divide starting point formation process, by the optically focused of laser beam
Point location is irradiated in the first segmentation preset lines and the second segmentation preset lines, forms segmentation starting point；First segmentation process, will
Pressing sword is positioned at the first segmentation preset lines and assigns external force and be split to the first segmentation preset lines；And second segmentation work
Pressing sword is positioned at the second segmentation preset lines and assigns external force and be split to the second segmentation preset lines by sequence, by this
One segmentation process and second segmentation process divide the wafer into each device.
It can make the wavelength of the laser beam irradiated in the segmentation starting point formation process that there is permeability for chip,
The focal point of the laser beam is positioned at the inside of the first segmentation preset lines and the second segmentation preset lines and is formed as segmentation
The modification layer of starting point.Alternatively, it is also possible to make the wavelength of the laser beam irradiated in the segmentation starting point formation process for crystalline substance
Piece has absorbability, and the focal point of the laser beam is positioned to the upper surface of the first segmentation preset lines and the second segmentation preset lines
And the slot as segmentation starting point is formed by ablation.
It is preferred that the polyester sheet is any in polyethylene terephthalate piece, polyethylene naphthalate piece
Piece.In addition, the chip can be made of any substrate in silicon substrate, sapphire substrate, silicon carbide substrate, glass substrate.
The processing method of chip of the invention divides the wafer into each device, the chip by formed along first direction
The second segmentation preset lines that one segmentation preset lines and edge are formed with the second direction that the first direction intersects divide and on front
It is formed with multiple devices, wherein the processing method of the chip includes at least following process: polyester sheet lays process, will be brilliant
Piece is positioned in the opening of the frame with the opening stored to chip and applies at the back side of chip and the periphery of frame
If polyester sheet；Integrated process heats polyester sheet and is thermally compressed and makes chip and frame by polyester sheet
Frame integration；Divide starting point formation process, the focal point of laser beam is positioned at the first segmentation preset lines and the second segmentation is pre-
Alignment and be irradiated, formed segmentation starting point；Pressing sword is positioned at the first segmentation preset lines and assigned outer by the first segmentation process
Power and to first segmentation preset lines be split；And second segmentation process, pressing sword is positioned at the second segmentation preset lines simultaneously
It assigns external force and the second segmentation preset lines is split, divided chip by first segmentation process and second segmentation process
Be cut into each device, thus will not be as using the dicing tape with adhesive layer to paste chip the case where adhesive layer a part
It enters to the region that the first segmentation preset lines are divided and causes offset, it is being split to the first segmentation preset lines
Afterwards, pressing sword can be precisely oriented and divides preset lines in second, overcome the problems, such as to make the quality of device to reduce.
Detailed description of the invention
Fig. 1 is the perspective view for showing the embodiment of polyester sheet laying process of the present embodiment.
Fig. 2 is to show the side that polyester sheet is placed in chuck table in polyester sheet laying process shown in Fig. 1
The perspective view of formula.
(a) and (b) of Fig. 3 is the perspective view for showing the embodiment of integrated process of the present embodiment.
Fig. 4 is the perspective view for showing the embodiment of cut off operation of the present embodiment.
(a) and (b) of Fig. 5 is the perspective view for showing an embodiment of segmentation starting point formation process of the present embodiment.
(a) and (b) of Fig. 6 is the perspective view for showing the other embodiments of segmentation starting point formation process of the present embodiment.
Fig. 7 is the side view for showing the embodiment of segmentation process of the present embodiment.
Label declaration
10: chip；12A: the first segmentation preset lines；12B: the second segmentation preset lines；14: device；20: chuck table；
21: absorption chuck；30: polyethylene terephthalate piece；40: heat blow unit；50: heating roller unit；52: heating
Roller；60: cutting unit；62: cutter cutter；70,70 ': laser processing device；72: condenser；80: segmenting device；82: pressing
Press sword；83: a pair of support parts；100: modification layer；110: slot；130: cut-off rule.
Specific embodiment
Hereinafter, being illustrated in order to each process of the processing method of the chip constituted according to the present invention.
(polyester sheet laying process)
Referring to Figures 1 and 2, polyester sheet laying process is illustrated.Polyester sheet laying process is shown in FIG. 1
The perspective view of embodiment.When implementing polyester sheet laying process, first as shown in Figure 1, preparing as workpiece
Chip 10, the ring-shaped frame F with the opening Fa that can be stored to chip 10 and for implement polyester sheet laying work
The chuck table 20 of sequence.Chip 10 is for example made of silicon (Si) substrate, and device 14 is formed in as the first party shown in the arrow X
Second direction shown in the arrow Y at right angles intersected to the first segmentation preset lines 12A of formation and edge with first direction is formed
Second segmentation preset lines 12B divide positive 10a on.
Chuck table 20 includes: the absorption chuck 21 of disc-shape, by the porous pottery of the Porous with aeration
Porcelain is constituted；And round frame portion 22, around the periphery of absorption chuck 21, chuck table 20 and attraction unit (not shown) connect
It connects and attracting holding can be carried out to the chip 10 for the upper surface (retaining surface) for being placed in absorption chuck 21.
If having prepared chip 10, frame F and chuck table 20, as shown, the guarantor relative to absorption chuck 21
Face is held, the positive side 10a of chip 10 is made to be placed in the center for adsorbing chuck 21 downward.If chip 10 is placed in absorption chuck
On 21, then frame F is placed on absorption chuck 21 while chip 10 to be positioned to the center of opening Fa.By Tu Keli
Solution, the size of the opening Fa of frame F forms bigger than chip 10, to be stored to chip 10, in addition, absorption chuck 21
The size of retaining surface forms more bigger than the shape of frame F, and the retaining surface for being set to absorption chuck 21 is exposed in the outside of frame F
Size.
As shown in Fig. 2, preparing circular polyester sheet such as polyethylene terephthalate (PET) piece 30, the polyester
It is that piece is set in the way of covering the back side 10b of chip 10, frame F and absorption chuck 21, is placed in absorption chuck
On 21.Polyester sheet is preferably formed with 20 μm~100 μm of thickness.By Fig. 2 it is understood that the poly terephthalic acid second of the present embodiment
Diol ester piece 30 is at least bigger than adsorbing the diameter of chuck 21, preferably omits according to the shape of the round frame portion 22 than chuck table 20
Small diameter is formed.The entire retaining surface for adsorbing chuck 21 as a result, is covered by polyethylene terephthalate piece 30.In addition,
In adhesive layers such as the not formed pastes in mounting surface side for being placed in chip 10 and frame F of polyethylene terephthalate piece 30.
If chip 10, frame F and polyethylene terephthalate piece 30 to be placed in the absorption of chuck table 20
On chuck 21, then the attraction unit (not shown) comprising suction pump etc. is made to be acted and attraction Vm is acted on absorption chuck
21, to attract chip 10, frame F and polyethylene terephthalate piece 30.As described above, by poly- to benzene
The entire upper surface (retaining surface) of the covering absorption chuck 21 of naphthalate piece 30, therefore attraction Vm acts on chip
10, the entirety of frame F and polyethylene terephthalate piece 30, by their attracting holdings in absorption chuck 21 on, and
The air remained between chip 10, frame F and polyethylene terephthalate piece 30 is attracted and keeps them tight
Patch.By the above, completing polyester sheet lays process.
(integrated process)
If implementing above-mentioned polyester sheet laying process, then implement integrated process.Referring to Fig. 3 to integrated chemical industry
Sequence is illustrated.
First embodiment for implementing integrated process is shown in (a) of Fig. 3.Implementing integrated process
When, as shown, will be used to (only show one to the heat blow unit 40 that polyethylene terephthalate piece 30 heats
Part) it is positioned to chip 10, frame F and polyethylene terephthalate piece 30 effect attraction Vm and carries out attraction guarantor
The top of the chuck table 20 for the state held.Omit detailed content, heat blow unit 40 be configured to chuck table
The heater portion with temperature adjustment units such as thermostats is arranged in the opposed outlet side in 20 sides (downside in figure), in opposite side
The fan portion driven by motor etc. is arranged in (upside in figure), and driving to the heater portion and fan portion
Hot wind L is blowed towards chuck table 20.If heat blow unit 40 to be positioned to the top of chuck table 20, pass through heat
Wind blower unit 40 is at least to the entire area for being placed with chip 10 and frame F that polyethylene terephthalate piece 30 is covered
Domain blows hot wind L, according to 250 DEG C~270 DEG C become near fusing point or from the temperature near the fusing point near than the fusing point
The mode of range of low 50 DEG C of temperature or so of temperature polyethylene terephthalate piece 30 is heated.By this plus
Heat, polyethylene terephthalate piece 30 soften, at the back side of polyethylene terephthalate piece 30 and chip 10
10b and frame F is thermally compressed in the state of being close to, to make chip 10, frame F and polyethylene terephthalate piece
30 integrations.In addition, implementing carry out heating and being thermally compressed with chip 10 to polyethylene terephthalate piece 30 one
The unit of body chemical industry sequence is not limited to heat blow unit 40 shown in (a) of Fig. 3, also can choose other units.Referring to Fig. 3's
(b), other units (second embodiment) are illustrated.
As other units for implementing above-mentioned integrated process, heating roller unit 50 shown in (b) of Fig. 3 can choose
(a part is only shown).More specifically, it will be used to that polyethylene terephthalate piece 30 to be heated and pressed
Heating roller unit 50 be positioned to chip 10, frame F and polyethylene terephthalate piece 30 act on attraction Vm and
Carry out the top of the chuck table 20 of the state of attracting holding.Detailed content is omitted, heating roller unit 50 is not schemed with built-in
The heating roller 52 of the heater shown and for make heating roller 52 rotate rotary shaft (not shown), the surface of heating roller 52 is by reality
Apply fluororesin processing.If heating roller 52 to be positioned to the top of chuck table 20, make the heating for being built in heating roller 52
Device is acted, and is integrally carried out to the side back side 10b and frame F for the chip 10 that polyethylene terephthalate piece 30 is covered
It presses and heating roller 52 is made in the direction of the arrowx while rotating to direction shown in arrow R1 and move.In poly- terephthaldehyde
Sour glycol ester piece 30 is as 250 DEG C~270 DEG C near fusing point or from the temperature near the fusing point near than the fusing point
The heater for being built in heating roller 52 is adjusted in the range of low 50 DEG C of temperature or so of temperature.By the heating and press
Pressure, can be in the back side 10b of polyethylene terephthalate piece 30 and chip 10 in the same manner as above-mentioned heat blow unit 40
It is thermally compressed in the state of being tightly attached to frame F, to make chip 10, frame F and polyethylene terephthalate piece
30 integrations.In addition, the variation as the heating roller unit 50 for implementing integrated process, also can replace above-mentioned heating roller
52, and use have heater flat pressing component, polyethylene terephthalate piece 30 is heated, by
Pressure, and 30 hot pressing of polyethylene terephthalate piece is connected to chip 10 and frame F.In addition, the unit being thermally compressed is not
It is limited to above-mentioned each unit, such as polyethylene terephthalate piece 30 can also be heated by irradiating infrared ray
To be thermally compressed with frame 10 and frame F.
In the present embodiment, after above-mentioned integrated process, it is contemplated that subsequent handling is implemented cut off operation, will be gathered
Ethylene glycol terephthalate piece 30 is cut off along frame F.In addition, the cut off operation is not necessarily necessary process, but implementing should
Cut off operation is then easier to operate to the integrated chip 10 of polyethylene terephthalate piece 30 and frame F, be conducive into
Row subsequent handling.Hereinafter, being illustrated referring to Fig. 4 to cut off operation.
(cut off operation)
As shown in figure 4, cutting unit 60 (only showing a part) is positioned on chuck table 20, the chuck table
20 pairs are attracted by the integrated chip 10 of integrated process, frame F and polyethylene terephthalate piece 30
It keeps.Cutting unit 60 has the cutter cutter 62 of the disc-shape for cutting off polyethylene terephthalate piece 30
(being shown with double dot dash line) and for making cutter cutter 62 rotate the (not shown) of driving on the direction shown in arrow R2
The blade tip of cutter cutter 62 is positioned at the substantial middle of the width direction on frame F by motor.If by cutter cutter 62
It is positioned on frame F, then cutter cutter 62 is subjected to incision feeding according to the thickness of polyethylene terephthalate piece 30,
Rotate chuck table 20 on the direction shown in arrow R2.Thereby, it is possible to by 30 edge of polyethylene terephthalate piece
Along frame F cutting line C cutting and by the periphery of the polyethylene terephthalate piece 30 leant out from cutting line C cut off.
In addition, polyethylene terephthalate piece 30 is hot pressed the back side 10b and frame F for being connected to chip 10, so as to remain brilliant
Piece 10, frame F and the integrated state of polyethylene terephthalate piece 30.By the above, completing cut off operation.
(segmentation starting point formation process)
If the periphery of polyethylene terephthalate piece 30 is cut off by the cut off operation, utilize laser processing device
Set implementation segmentation starting point formation process.As implement segmentation starting point formation process laser processing, such as can choose as
Under method: make the wavelength of laser beam for chip have permeability wavelength, the focal point of laser beam is positioned at
First segmentation preset lines 12A and second divides the inside of preset lines 12B and forms the method for modifying layer as segmentation starting point；Or
So that the wavelength of laser beam is had absorbent wavelength for chip, it is pre- that the focal point of laser beam is positioned at the first segmentation
Alignment 12A and second divides the upper surface of preset lines 12B and forms the method as the slot for dividing starting point by ablation.
Referring to Fig. 5, the inside that the segmentation of preset lines 12A and second preset lines 12B is divided the first of chip 10 is formed and is made
Embodiment for the laser processing of the modification layer of segmentation starting point is illustrated.
It is formed when in the inside of the first segmentation preset lines 12A and the second segmentation preset lines 12B as the modification for dividing starting point
When layer, laser beam is irradiated from the back side side 10b of chip 10.Therefore, as shown in (a) of Fig. 5, make in above-mentioned integrated process
The back side side 10b for realizing integrated chip 10 with frame F upward, make 30 side of polyethylene terephthalate piece at
Laser processing device 70 (only showing a part) shown in (b) to Fig. 5 is transported for top.
Laser processing device 70 shown in (b) of Fig. 5 is known laser processing device, omits detailed content, and laser adds
Tooling, which sets 70, has chuck table (not shown) and the laser light irradiation unit comprising condenser 72 etc..It transports to laser
The chip 10 of processing unit (plant) 70 loads in such a way that polyethylene terephthalate piece 30 becomes top and is held in the card
Disk workbench.Then, by the aligned units with infrared ray shooting unit (not shown), the laser light irradiation unit is carried out
Condenser 72 laser beam LB irradiation position and chip 10 processed position, i.e. first divide preset lines 12A and the
The contraposition (alignment process) of two segmentation preset lines 12B.If terminating the alignment process, such as shown in (b) of Fig. 5, by laser beam
The focal point of LB is positioned at the inside of chip 10, moves condenser 72 and chip 10 relatively in a direction shown by the arrowx
And pass through polyethylene terephthalate piece 30 and be irradiated, it is formed along the first segmentation preset lines 12A as segmentation starting point
Modification layer 100.If forming modification along the first all segmentation preset lines 12A and moving the chuck table suitably
Layer 100 is rotated by 90 ° the chuck table in the same manner as the first segmentation preset lines 12A, divides preset lines along second
12B forms modification layer 100 in the inside of chip 10.By the laser processing more than implementing, segmentation starting point formation process is completed.
In addition, laser processing condition of the above-mentioned formation as the laser processing device 70 of the modification layer 100 of segmentation starting point
Such as following setting.
Segmentation starting point formation process of the invention is not limited to above-mentioned unit, such as laser shown in fig. 6 also can be used
Processing unit (plant) 70 ' is implemented.Hereinafter, implementing its of segmentation starting point formation process to laser processing device 70 ' is used referring to Fig. 6
He is illustrated embodiment.
As the other embodiments for implementing segmentation starting point formation process, inhaled as shown in fig. 6, irradiation has chip 10
The laser beam LB ' of the wavelength for the property received, by the focal point of laser beam LB ' along the first segmentation preset lines 12A and the second segmentation
Preset lines 12B is positioned on the upper surface (the positive side 10a) of chip 10, and the slot as segmentation starting point is formed by ablation.
Conduct is formed on the positive 10a of chip 10 when dividing preset lines 12B along the first segmentation preset lines 12A and second
When dividing the slot of starting point, as shown in (a) of Fig. 6, make in above-mentioned integrated process with the integrated chip 10 of frame F just
Laser processing device 70 ' (only showing a part) shown in (b) that the face side 10a is transported as top to Fig. 6.
Laser processing device 70 ' is known laser processing device, omits detailed content, and laser processing device 70 ' has
Chuck table (not shown) and the laser light irradiation unit comprising condenser 72 ' etc., conveying to laser processing device 70 '
Chip 10 loads in such a way that the positive 10a of chip 10 becomes top and attracting holding is in the chuck table.Then, pass through
Aligned units with shooting unit (not shown), carry out the irradiation position of the condenser 72 ' of the laser light irradiation unit with
The contraposition (alignment process) of the Working position of chip 10, i.e., the first segmentation preset lines 12A and the second segmentation preset lines 12B.If knot
The focal point of laser beam LB ' is positioned on the positive 10a of chip 10 by beam alignment process then as shown in (b) of Fig. 6, on one side
Make condenser 72 ' and chip 10 are relatively mobile in a direction shown by the arrowx to irradiate laser beam LB ' on one side and implement ablation
Processing.It is formed and moving the chuck table suitably along the first segmentation preset lines 12A and the second segmentation preset lines 12B
Slot 110 as segmentation starting point.By above laser processing, segmentation starting point formation process is completed.
In addition, the laser processing condition of laser processing device 70 ' of the above-mentioned formation as the slot 110 for dividing starting point is for example
Following setting.
Segmentation starting point formation process of the invention is not limited to implement above-mentioned laser processing, also can choose its other party
Formula.For example, it can be from the back side side 10b by for chip 10 have permeability wavelength laser beam optically focused point location
Be irradiated in the inside of chip 10, formed along the first segmentation preset lines 12A and the second segmentation preset lines 12B by pore and
Around the shield tunnel that the noncrystalline of pore is constituted as the starting point of segmentation.
(segmentation process)
If implementing segmentation starting point formation process as described above, implement segmentation process.In addition, to above-mentioned by implementing
Segmentation starting point formation process and along first segmentation preset lines 12A and second segmentation preset lines 12B chip 10 inside shape
It is illustrated at the case where implementing segmentation process described below after the modification layer 100 as segmentation starting point.
The segmentation process of the present embodiment includes at least: assigning external force to the first segmentation preset lines 12A and divides to first pre-
The first segmentation process that alignment is split；And external force is assigned to the second segmentation preset lines 12B and divides preset lines to second
The second segmentation process that 12B is split.Referring to Fig. 7, the segmentation process for using segmenting device 80 and implementing is illustrated.
Segmenting device 80 shown in Fig. 7 at least has pressing sword 82, a pair of support parts 83 and shooting unit (not shown).
When implementing the first segmentation process, make the positive 10a of chip 10 that chip 10 are placed in a pair of support parts 83 downward.It should
Shooting unit be configured to from the positive side 10a for the chip 10 for being placed in a pair of support parts 83, i.e. lower side to chip 10 into
Row shooting is shot by the first segmentation preset lines 12A of the shooting unit to chip 10, so that modification layer will be formed with
100 the first segmentation preset lines 12A is positioned exactly between a pair of support parts 83 and is positioned at the underface of pressing sword 82.One
To extending on supporting part 83 in one direction (being the Y-direction vertical with paper in Fig. 7), clip according to when overlooking along this
The mode of first segmentation preset lines 12A of direction positioning is positioned.It is positioned at the pressing sword 82 of the top of a pair of support parts 83
Also it is upwardly extended in the same manner as a pair of support parts 83 in a side, through pressing mechanism (not shown) shown in the arrow Z
Upper and lower moves up.
As shown in fig. 7, making pressing sword 82 drop to 10 side of chip along arrow Z, thus to modify layer 100 as segmentation starting point
And chip 10 is split along the first segmentation preset lines 12A, form cut-off rule 130.Then, in direction shown by arrow X
On make to press sword 82 and a pair of support parts 83 and chip 10 relatively moves and carries out processing feeding, thus by undivided first
Segmentation preset lines 12A is moved to the underface of pressing sword 82 and is moved between a pair of support parts 83, repeats similarly to divide
Processing is cut, sword 82 will be pressed and be pressed into the first all segmentation preset lines 12A and assign external force and form cut-off rule 130.Also,
It is rotated by 90 ° chip 10, it is using the shooting unit, the second segmentation preset lines 12B for being formed with modification layer 100 is accurately fixed
Positioned at pressing sword 82 underface and be positioned between a pair of support parts 83, by with to it is above-mentioned first segmentation preset lines 12A into
The same process of process of row segmentation is split and forms cut-off rule 130.By the above, chip 10 is divided into each device
14, complete segmentation process.In addition, to preset lines 12B is being divided in chip 10 along the first segmentation preset lines 12A and second
Portion is formed to be illustrated as the case where implementing above-mentioned segmentation process after the modification layer 100 for dividing starting point, but is being divided
In starting point formation process, formed on the positive 10a of the first segmentation preset lines 12A and the second segmentation preset lines 12B by ablation
In the case where slot 110 as segmentation starting point, it can be also split by unit similar to the above.
If completing the segmentation process, transport together with the frame F kept to chip 10 to pickup process, from poly-
Ethylene glycol terephthalate piece 30 picks up each device 14, conveying to bonding process or is accommodated in collecting pallet etc. and transports extremely
Subsequent handling.
According to the processing method of the chip of above-mentioned the present embodiment, for chip 10, frame F and (poly- pair of polyester sheet
Ethylene terephthalate piece 30), one is carried out not over the adhesive layer formed in polyester sheet surface coating paste etc.
Body, but at least polyester sheet is heated and is thermally compressed and integration is carried out to chip 10 and frame F.As a result,
It will not be generated as there is the case where dicing tape of adhesive layer since a part of adhesive layer enters to the region (segmentation of segmentation
Line) and the problem of initiation offset etc. can will press sword 82 critically after being split to the first segmentation preset lines 12A
It is positioned at the second segmentation preset lines 12B, the quality of device will not be made to reduce.
In addition, according to the present invention, being not limited to above embodiment, it is possible to provide various modifications example.In the above-described embodiment,
Select polyethylene terephthalate piece 30 as polyester sheet, however, the present invention is not limited thereto can be fitted from polyester sheet
Work as selection.It as other polyester sheets, such as can be polyethylene naphthalate (PEN) piece.
In the above-described embodiment, 250 DEG C~270 heating temperature in integrated process is set near fusing point
DEG C or from the temperature near the fusing point to the temperature than low 50 DEG C of temperature or so near the fusing point in the range of, but the present invention
It is without being limited thereto, heating temperature is preferably adjusted according to the type of selected polyester sheet.Such as selecting poly- naphthalenedicarboxylic acid second
In the case that diol ester piece is as polyester sheet, preferably by heating temperature be set in 160 DEG C~180 DEG C near fusing point or from
In the range of temperature to the temperature than low 50 DEG C of temperature or so near the fusing point near the fusing point.
In the above-described embodiment, make chip silicon (Si) substrate as workpiece, however, the present invention is not limited thereto,
Also it may be constructed as by other materials such as sapphire (Al2O2) substrate, silicon carbide (SiC) substrate, glass (SiO2) substrate structure
At.
Claims (5)
1. a kind of processing method of chip, divides the wafer into each device, the chip is by formed along first direction first point
It cuts preset lines and divides along the second segmentation preset lines that the second direction intersected with the first direction is formed and formed on front
There are multiple devices, wherein
The processing method of the chip includes at least following process:
Polyester sheet lays process, by wafer orientation in the opening with the frame of opening stored to chip and
Polyester sheet is laid in the back side of chip and the periphery of frame；
Integrated process heats polyester sheet and is thermally compressed and makes chip and frame one by polyester sheet
Change；
Divide starting point formation process, by the focal point of laser beam be positioned at the first segmentation preset lines and second segmentation preset lines and
It is irradiated, forms segmentation starting point；
Pressing sword is positioned at the first segmentation preset lines and assigns external force and carry out to the first segmentation preset lines by the first segmentation process
Segmentation；And
Pressing sword is positioned at the second segmentation preset lines and assigns external force and carry out to the second segmentation preset lines by the second segmentation process
Segmentation,
Each device is divided the wafer by first segmentation process and second segmentation process.
2. the processing method of chip according to claim 1, wherein
The wavelength of the laser beam irradiated in the segmentation starting point formation process has permeability for chip, by the laser light
The focal point of line is positioned at the inside of the first segmentation preset lines and the second segmentation preset lines and forms the modification as segmentation starting point
Layer.
3. the processing method of chip according to claim 1, wherein
The wavelength of the laser beam irradiated in the segmentation starting point formation process has absorbability for chip, by the laser light
The focal point of line be positioned at the first segmentation preset lines and second segmentation preset lines upper surface and formed by ablation as point
Cut the slot of starting point.
4. according to claim 1 to the processing method of chip described in any one in 3, wherein
Any piece of the polyester sheet in polyethylene terephthalate piece, polyethylene naphthalate piece.
5. according to claim 1 to the processing method of chip described in any one in 4, wherein
The chip is made of any substrate in silicon substrate, sapphire substrate, silicon carbide substrate, glass substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018081726A JP7154809B2 (en) | 2018-04-20 | 2018-04-20 | Wafer processing method |
| JP2018-081726 | 2018-04-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110391139A true CN110391139A (en) | 2019-10-29 |
| CN110391139B CN110391139B (en) | 2024-03-15 |
Family
ID=68284312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910288187.2A Active CN110391139B (en) | 2018-04-20 | 2019-04-11 | Wafer processing method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7154809B2 (en) |
| KR (1) | KR102681932B1 (en) |
| CN (1) | CN110391139B (en) |
| TW (1) | TWI802682B (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7282452B2 (en) | 2019-02-15 | 2023-05-29 | 株式会社ディスコ | Wafer processing method |
| JP7282453B2 (en) | 2019-02-15 | 2023-05-29 | 株式会社ディスコ | Wafer processing method |
| JP7282455B2 (en) | 2019-03-05 | 2023-05-29 | 株式会社ディスコ | Wafer processing method |
| JP7277019B2 (en) | 2019-03-05 | 2023-05-18 | 株式会社ディスコ | Wafer processing method |
| JP2020174100A (en) | 2019-04-10 | 2020-10-22 | 株式会社ディスコ | Wafer processing method |
| JP7313767B2 (en) | 2019-04-10 | 2023-07-25 | 株式会社ディスコ | Wafer processing method |
| JP7330616B2 (en) | 2019-05-10 | 2023-08-22 | 株式会社ディスコ | Wafer processing method |
| JP7330615B2 (en) | 2019-05-10 | 2023-08-22 | 株式会社ディスコ | Wafer processing method |
| JP7286247B2 (en) | 2019-06-07 | 2023-06-05 | 株式会社ディスコ | Wafer processing method |
| JP7286245B2 (en) | 2019-06-07 | 2023-06-05 | 株式会社ディスコ | Wafer processing method |
| JP7305268B2 (en) | 2019-08-07 | 2023-07-10 | 株式会社ディスコ | Wafer processing method |
| JP7345973B2 (en) | 2019-08-07 | 2023-09-19 | 株式会社ディスコ | Wafer processing method |
| JP7341607B2 (en) | 2019-09-11 | 2023-09-11 | 株式会社ディスコ | Wafer processing method |
| JP7341606B2 (en) | 2019-09-11 | 2023-09-11 | 株式会社ディスコ | Wafer processing method |
| JP7383338B2 (en) | 2019-10-10 | 2023-11-20 | 株式会社ディスコ | Wafer processing method |
| JP2021064627A (en) | 2019-10-10 | 2021-04-22 | 株式会社ディスコ | Wafer processing method |
| JP7387228B2 (en) | 2019-10-17 | 2023-11-28 | 株式会社ディスコ | Wafer processing method |
| JP7301480B2 (en) | 2019-10-17 | 2023-07-03 | 株式会社ディスコ | Wafer processing method |
| JP7430515B2 (en) * | 2019-11-06 | 2024-02-13 | 株式会社ディスコ | Wafer processing method |
| JP2021077735A (en) * | 2019-11-07 | 2021-05-20 | 株式会社ディスコ | Wafer processing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007165636A (en) * | 2005-12-14 | 2007-06-28 | Nippon Zeon Co Ltd | Method for manufacturing semiconductor element |
| CN104946153A (en) * | 2014-03-31 | 2015-09-30 | 日东电工株式会社 | Thermosetting chip bonding film, cutting/chip bonding film and semiconductor making method |
| CN106301270A (en) * | 2015-06-24 | 2017-01-04 | 株式会社迪思科 | The manufacture method of SAW device |
| CN107093578A (en) * | 2016-02-18 | 2017-08-25 | 株式会社迪思科 | The processing method of chip |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58153352A (en) * | 1982-03-09 | 1983-09-12 | Toshiba Corp | Manufacture of semiconductor device |
| JPS59152639A (en) * | 1983-02-21 | 1984-08-31 | Nec Home Electronics Ltd | Method for provisional fixing of semiconductor wafer |
| JPH10305420A (en) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device |
| JP2005191297A (en) | 2003-12-25 | 2005-07-14 | Jsr Corp | Dicing film and cutting method of semiconductor wafer |
| JP2011046581A (en) | 2009-08-28 | 2011-03-10 | Seiko Instruments Inc | Method for cutting joined glass, method for manufacturing package, package, piezoelectric vibrator, oscillator, electronic equipment and radio-controlled clock |
| JP5801046B2 (en) | 2010-12-06 | 2015-10-28 | 株式会社ディスコ | Processing method of plate |
| JP2014170845A (en) * | 2013-03-04 | 2014-09-18 | Nitto Denko Corp | Method for manufacturing semiconductor device, sheet-like resin composition, and dicing tape integrated sheet-like resin composition |
| CN107960133B (en) * | 2015-12-25 | 2021-10-26 | 古河电气工业株式会社 | Semiconductor processing belt |
| JP6741529B2 (en) * | 2016-09-09 | 2020-08-19 | 株式会社ディスコ | Tip spacing maintenance method |
-
2018
- 2018-04-20 JP JP2018081726A patent/JP7154809B2/en active Active
-
2019
- 2019-03-29 KR KR1020190037343A patent/KR102681932B1/en active IP Right Grant
- 2019-04-11 CN CN201910288187.2A patent/CN110391139B/en active Active
- 2019-04-17 TW TW108113335A patent/TWI802682B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007165636A (en) * | 2005-12-14 | 2007-06-28 | Nippon Zeon Co Ltd | Method for manufacturing semiconductor element |
| CN104946153A (en) * | 2014-03-31 | 2015-09-30 | 日东电工株式会社 | Thermosetting chip bonding film, cutting/chip bonding film and semiconductor making method |
| CN106301270A (en) * | 2015-06-24 | 2017-01-04 | 株式会社迪思科 | The manufacture method of SAW device |
| CN107093578A (en) * | 2016-02-18 | 2017-08-25 | 株式会社迪思科 | The processing method of chip |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201944476A (en) | 2019-11-16 |
| KR20190122552A (en) | 2019-10-30 |
| TWI802682B (en) | 2023-05-21 |
| KR102681932B1 (en) | 2024-07-04 |
| JP2019192718A (en) | 2019-10-31 |
| JP7154809B2 (en) | 2022-10-18 |
| CN110391139B (en) | 2024-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110391139A (en) | The processing method of chip | |
| CN110391182A (en) | The processing method of chip | |
| JP4777761B2 (en) | Wafer division method | |
| CN110491820A (en) | The processing method of chip | |
| KR20060109838A (en) | Support board separating apparatus, and support board separating method using the same | |
| JP7130323B2 (en) | Wafer processing method | |
| KR20140126247A (en) | Wafer machining method | |
| JP2007242787A (en) | Splitting method of wafer | |
| KR102702193B1 (en) | Wafer processing method | |
| KR102305385B1 (en) | Method for maintaining spaces between chips | |
| CN110429062A (en) | The processing method of chip | |
| JP7139040B2 (en) | Wafer processing method | |
| JP7143019B2 (en) | Wafer processing method | |
| CN109421179A (en) | Processing method | |
| KR102294249B1 (en) | Processing method of a wafer | |
| JP7139041B2 (en) | Wafer processing method | |
| KR20200043282A (en) | Wafer processing method | |
| JP7134562B2 (en) | Wafer processing method | |
| JP7139042B2 (en) | Wafer processing method | |
| JP7134563B2 (en) | Wafer processing method | |
| JP7134560B2 (en) | Wafer processing method | |
| JP7134561B2 (en) | Wafer processing method | |
| JP2019212813A (en) | Wafer processing method | |
| JP2019212814A (en) | Wafer processing method | |
| JP2020009892A (en) | Wafer processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |