TW201944476A - Wafer processing method preventing deterioration of device quality even when the pressing blade is placed on preset lines to be cut and an external force is applied - Google Patents
Wafer processing method preventing deterioration of device quality even when the pressing blade is placed on preset lines to be cut and an external force is applied Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 238000003825 pressing Methods 0.000 title abstract description 22
- 230000006866 deterioration Effects 0.000 title abstract 2
- 229920000728 polyester Polymers 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 27
- 230000010354 integration Effects 0.000 claims abstract description 17
- -1 polyethylene terephthalate Polymers 0.000 claims description 47
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 46
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 13
- 238000002679 ablation Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 description 15
- 239000010410 layer Substances 0.000 description 15
- 238000002844 melting Methods 0.000 description 12
- 230000008018 melting Effects 0.000 description 12
- 239000012790 adhesive layer Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000007664 blowing Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本發明是關於一種晶圓加工方法，將晶圓分割為一個個元件。The invention relates to a wafer processing method, which divides a wafer into individual elements.
在正面上形成有以分割預定線劃分的IC、LSI、LED等多個元件的晶圓，藉由切割裝置、雷射加工裝置等分割成一個個元件，並使用於行動電話、個人電腦等電子設備中。A wafer having a plurality of components such as ICs, LSIs, and LEDs divided by a predetermined division line is formed on the front surface, and is divided into individual components by a dicing device, a laser processing device, and the like. Device.
雷射加工裝置，存在有一種將對晶圓具有穿透性波長的雷射光束的聚光點定位在分割預定線的內部而照射，以形成改質層作為分割起點的類型（例如，參照專利文獻1），以及一種將對晶圓具有吸收性波長的雷射光束的聚光點定位在分割預定線的上表面而照射，以藉由燒蝕而在正面形成溝槽作為分割起點的類型（例如，參照專利文獻2）。A laser processing device includes a type in which a focusing point of a laser beam having a penetrating wavelength to a wafer is positioned inside a predetermined division line and irradiated to form a modified layer as a division starting point (for example, refer to a patent Document 1), and a type in which a condensing point of a laser beam having an absorptive wavelength to a wafer is positioned on an upper surface of a predetermined division line and irradiated, and a groove is formed on the front surface by ablation as a starting point of division ( For example, refer to Patent Document 2).
晶圓藉由上述雷射加工裝置沿著分割預定線形成分割起點之後，施行施加外力等的分割步驟以分割為一個個元件。經過分割步驟的晶圓，在分割為一個個元件之後，由於被保持在切割膠膜上並在保持為晶圓的形態下被搬送至拾取步驟，所以投入雷射加工裝置的晶圓，被定位在具有容納晶圓的開口的框架之該開口上，並藉由將晶圓的背面及框架黏貼在諸如塗佈黏著劑等以形成有黏著層的切割膠膜之黏著層側，而成為切割膠膜與框架一體化的狀態。藉此，經過分割步驟的晶圓，被分割為一個個的元件不會從切割膠膜上脫離，而能夠在保持為晶圓的形態下搬送至拾取步驟。
[習知技術文獻]
[專利文獻]After the wafer is formed along the predetermined division line by the laser processing device to form a division starting point, the wafer is divided into individual elements by performing a division step such as applying an external force. After the wafer is divided into individual components, it is held on the dicing film and transferred to the pick-up step while remaining in the form of a wafer. Therefore, the wafer that is put into the laser processing device is positioned. On the opening of the frame having the opening for accommodating the wafer, the back surface of the wafer and the frame are adhered to an adhesive layer side of a dicing adhesive film such as an adhesive applied to form an adhesive layer, thereby becoming a dicing adhesive. The state where the membrane is integrated with the frame. Thereby, the wafer that has been divided into individual elements is not separated from the dicing film and can be transported to the pick-up step while remaining as a wafer.
[Xizhi technical literature]
[Patent Literature]
[專利文獻1]日本特許第3408805號公報
[專利文獻2]日本特開平10-305420號公報[Patent Document 1] Japanese Patent No. 3408805
[Patent Document 2] Japanese Patent Application Laid-Open No. 10-305420
[發明所欲解決的課題]
在將晶圓的背面及框架定位並黏貼在切割膠膜的黏著層側，並藉由將推壓刀定位在形成有分割起點的分割預定線上以施加外力，將透過切割膠膜而被支撐在框架上的晶圓分割的情況下，對於形成在第一方向上的第一分割預定線定位推壓刀並施加外力而進行分割之後，對於形成在與第一方向交叉的第二方向上的第二分割預定線定位推壓刀並施加外力以進行分割。此時，先分割的第一分割預定線能夠完整地分割。然而，沿著第一分割預定線的分割起點分割以形成分割線時，諸如黏著層進入到該分割線，致使尚未分割的第二分割預定線些微蛇行，變得難以精密地將推壓刀沿著第二分割預定線定位，若就這樣將推壓刀定位並施加外力以分割第二分割預定線，則有產生元件的崩缺等、招致品質降低的問題。近年來，已需求元件的小尺寸（2mm見方以下）化，特別是0.5mm見方、0.25mm見方、0.15mm見方等，元件的尺寸愈小，則此第二分割預定線之些微蛇行的影響會變得愈顯著。[Problems to be Solved by the Invention]
The back side of the wafer and the frame are positioned and adhered to the adhesive layer side of the dicing film, and an external force is applied by positioning a pusher knife on a predetermined dividing line where the starting point of the dicing is formed to be supported through the dicing film. In the case of wafer division on a frame, a pusher blade is positioned on a first planned dividing line formed in a first direction and an external force is applied to perform division. Then, a second wafer formed in a second direction crossing the first direction is divided. The two-part division line is positioned to push the knife and apply external force to perform division. At this time, the first divided scheduled line that can be divided first can be completely divided. However, when dividing along the dividing starting point of the first dividing planned line to form a dividing line, such as an adhesive layer entering the dividing line, the second dividing scheduled line that has not been divided is slightly snaked, and it becomes difficult to precisely push the blade edge. Positioning on the second division predetermined line, if the pressing blade is positioned in this way and an external force is applied to divide the second division predetermined line, there is a problem that a component is chipped or the like and quality is lowered. In recent years, the small size (less than 2mm square) of components has been demanded, especially 0.5mm square, 0.25mm square, 0.15mm square, etc. The smaller the component size, the smaller the meandering effect of this second division line Become more significant.
本發明是有鑑於上述事實而研發者，其主要的技術課題是提供一種晶圓加工方法，即使將推壓刀定位於分割預定線並施加外力以將晶圓分割為一個個元件，也不會招致元件的品質降低。The present invention has been developed in view of the above-mentioned facts, and its main technical problem is to provide a wafer processing method. Even if a pusher blade is positioned at a predetermined division line and an external force is applied to divide the wafer into individual components, it will not Incurs a reduction in the quality of the components.
[解決課題的技術手段]
為解決上述主要的技術課題，根據本發明，提供一種晶圓加工方法，將正面上形成有多個元件的晶圓分割為一個個元件，所述多個元件藉由形成於第一方向的第一分割預定線與形成於與該第一方向交叉之第二方向的第二分割預定線所劃分；該晶圓加工方法至少由下述步驟所構成：聚酯類片鋪設步驟，將晶圓定位在具有容納晶圓之開口的框架的該開口中，並將聚酯類片鋪設在晶圓的背面與框架的外周上；一體化步驟，將聚酯類片加熱並熱壓接合，以將晶圓與框架藉由聚酯類片一體化；分割起點形成步驟，將雷射光束的聚光點定位在第一分割預定線與第二分割預定線上並照射，以形成分割起點；第一分割步驟，將推壓刀定位在第一分割預定線並施加外力，以分割第一分割預定線；以及，第二分割步驟，將推壓刀定位在第二分割預定線並施加外力，以分割第二分割預定線；並藉由該第一分割步驟與該第二分割步驟將晶圓分割為一個個的元件。[Technical means to solve the problem]
In order to solve the above-mentioned main technical problem, according to the present invention, a wafer processing method is provided, which divides a wafer on which a plurality of elements are formed on the front surface into individual elements, and the plurality of elements are formed by first A predetermined division line is divided by a second predetermined division line formed in a second direction crossing the first direction; the wafer processing method is composed of at least the following steps: a polyester sheet laying step to position the wafer In the opening of the frame having the opening for accommodating the wafer, a polyester sheet is laid on the back surface of the wafer and the outer periphery of the frame; the integration step is to heat and press-bond the polyester sheet to bond the crystal The circle and frame are integrated by a polyester sheet. The division starting point formation step locates the focusing point of the laser beam on the first division predetermined line and the second division predetermined line and irradiates to form the division starting point; the first division step , Positioning the pressing knife on the first predetermined dividing line and applying external force to divide the first dividing predetermined line; and, in the second dividing step, positioning the pressing knife on the second dividing predetermined line and applying external force to divide A second dividing line; and divided by the first step and the second step of dividing the wafer into a number of elements.
使在該分割起點形成步驟中照射的雷射光束的波長對晶圓具有穿透性，而能夠將該雷射光束的聚光點定位在第一分割預定線與第二分割預定線之內部，以形成作為分割起點之改質層。此外，也可以使在該分割起點形成步驟中照射的雷射光束的波長對晶圓具有吸收性，而將該雷射光束的聚光點定位在第一分割預定線與第二分割預定線之上表面，以藉由燒蝕形成作為分割起點之溝槽。Making the wavelength of the laser beam irradiated in the step of forming the division starting point transparent to the wafer, and condensing the laser beam within the first division line and the second division line, To form a modified layer as a starting point for segmentation. In addition, the wavelength of the laser beam irradiated in the division starting point forming step may be made absorptive to the wafer, and the condensing point of the laser beam may be positioned between the first planned division line and the second planned division line. On the upper surface, a trench as a starting point for division is formed by ablation.
較佳為，該聚酯類片係選擇自聚對苯二甲酸乙二酯片、聚萘二甲酸乙二醇酯片中的任一者。此外，該晶圓可以由矽基板、藍寶石基板、碳化矽基板、玻璃基板中的任一者所構成。Preferably, the polyester sheet is selected from any one of a polyethylene terephthalate sheet and a polyethylene naphthalate sheet. The wafer may be composed of any one of a silicon substrate, a sapphire substrate, a silicon carbide substrate, and a glass substrate.
[發明功效]
本發明的晶圓加工方法，將正面上形成有多個元件的晶圓分割為一個個元件，所述多個元件藉由形成於第一方向的第一分割預定線與形成於與該第一方向交叉之第二方向的第二分割預定線所劃分；該晶圓加工方法至少由下述步驟所構成：聚酯類片鋪設步驟，將晶圓定位在具有容納晶圓之開口的框架的該開口中，並將聚酯類片鋪設在晶圓的背面與框架的外周上；一體化步驟，將聚酯類片加熱並熱壓接合，以將晶圓與框架藉由聚酯類片一體化；分割起點形成步驟，將雷射光束的聚光點定位在第一分割預定線與第二分割預定線上並照射，以形成分割起點；第一分割步驟，將推壓刀定位在第一分割預定線並施加外力，以分割第一分割預定線；以及，第二分割步驟，將推壓刀定位在第二分割預定線並施加外力，以分割第二分割預定線；並藉由該第一分割步驟與該第二分割步驟將晶圓分割為一個個的元件，所以不會如同使用具有黏著層的切割膠膜黏貼晶圓的情況，黏著層的一部分進入到經分割第一分割預定線的區域中以致誘發偏差，而能夠在分割第一分割預定線之後，精密地將推壓刀定位在第二分割預定線上，解決使元件的品質降低的問題。[Inventive effect]
According to the wafer processing method of the present invention, a wafer having a plurality of elements formed on the front surface is divided into individual elements, and the plurality of elements are formed on a first dividing line formed in a first direction and formed on the first Divided by a second predetermined dividing line in a second direction where the directions intersect; the wafer processing method is composed of at least the following steps: a polyester sheet laying step, positioning the wafer in the frame having an opening for accommodating the wafer In the opening, the polyester sheet is laid on the back surface of the wafer and the outer periphery of the frame; the integration step is to heat and press-bond the polyester sheet to integrate the wafer and the frame through the polyester sheet ; The division starting point forming step, positioning the laser beam focusing point on the first division predetermined line and the second division predetermined line and irradiating to form the division starting point; the first division step, positioning the pressing knife at the first division predetermined And applying an external force to divide the first predetermined division line; and, in a second dividing step, positioning the pusher blade at the second predetermined division line and applying an external force to divide the second predetermined division line; and using the first division step This second singulation step divides the wafer into individual components, so as in the case of using a dicing film with an adhesive layer to stick the wafer, a part of the adhesive layer enters the area where the first division line is divided so that A deviation is induced, and after the first predetermined division line is divided, the pressing knife can be accurately positioned on the second predetermined division line, thereby solving the problem of reducing the quality of the component.
以下，依序說明基於本發明所構成的晶圓加工方法之各步驟。Hereinafter, each step of the wafer processing method based on this invention is demonstrated in order.
（聚酯類片鋪設步驟）
參照圖1及圖2，同時說明關於聚酯類片鋪設步驟。在圖1中，顯示有表示聚酯類片鋪設步驟的實施態樣之立體圖。實施聚酯類片鋪設步驟時，首先，如圖1所示，準備作為加工對象物的晶圓10、具有可容納晶圓10之開口Fa的環狀框架F以及用於實施聚酯類片鋪設步驟的卡盤台20。晶圓10例如由矽（Si）基板所製成，元件14則形成在藉由第一分割預定線12A與第二分割預定線12B所劃分的正面10a上，其中第一分割預定線12A形成於以箭頭X表示的第一方向上，第二分割預定線12B形成於以與第一方向垂直交叉的箭頭Y表示的第二方向上。(Polyester sheet laying step)
1 and 2, the polyester sheet laying process will be described at the same time. FIG. 1 is a perspective view showing an embodiment of a polyester sheet laying step. When the polyester sheet laying step is performed, first, as shown in FIG. 1, a wafer 10 as an object to be processed, a ring frame F having an opening Fa capable of accommodating the wafer 10, and a polyester sheet laying step are prepared. Step chuck table 20. The wafer 10 is made of, for example, a silicon (Si) substrate, and the element 14 is formed on the front surface 10a divided by the first predetermined division line 12A and the second predetermined division line 12B. The first predetermined division line 12A is formed on In the first direction indicated by the arrow X, the second predetermined division line 12B is formed in the second direction indicated by the arrow Y perpendicularly crossing the first direction.
卡盤台20由具有透氣性的多孔質之多孔陶瓷所製成的圓盤形狀吸附卡盤21以及圍繞吸附卡盤21外周的圓形框部22所組成，卡盤台20連接於未圖示的吸引手段，而能夠吸引保持載置於吸附卡盤21之上表面（保持面）上的晶圓10。The chuck table 20 is composed of a disk-shaped adsorption chuck 21 made of porous ceramic with air permeability and a circular frame portion 22 surrounding the outer periphery of the chuck table 21. The chuck table 20 is connected to a not-shown The suction means can suck and hold the wafer 10 placed on the upper surface (holding surface) of the suction chuck 21.
當準備好晶圓10、框架F以及卡盤台20後，如圖所示，相對於吸附卡盤21的保持面，將晶圓10的正面10a側往下，並載置於吸附卡盤21的中心。當將晶圓10載置於吸附卡盤21上後，晶圓10定位於開口Fa的中心之同時將框架F載置於吸附卡盤21上。如同從圖中可理解的，框架F之開口Fa的尺寸以可容納晶圓10的方式形成為比晶圓10大，更進一步，吸附卡盤21之保持面的尺寸形成為稍大於框架F的輪廍，並設定為在框架F的外側吸附卡盤21的保持面會露出的大小。After the wafer 10, the frame F, and the chuck table 20 are prepared, as shown in the figure, the front surface 10a side of the wafer 10 is downward with respect to the holding surface of the suction chuck 21, and placed on the suction chuck 21 center of. After the wafer 10 is placed on the suction chuck 21, the wafer 10 is positioned on the center of the opening Fa and the frame F is placed on the suction chuck 21. As can be understood from the figure, the size of the opening Fa of the frame F is larger than that of the wafer 10 so as to accommodate the wafer 10. Furthermore, the size of the holding surface of the suction chuck 21 is slightly larger than that of the frame F. The wheel is set to a size where the holding surface of the suction chuck 21 is exposed outside the frame F.
如圖2所示，準備設定為用以覆蓋晶圓10的背面10b、框架F與吸附卡盤21的圓形聚酯類片，例如聚對苯二甲酸乙二酯（PET）片30，並載置於吸附卡盤21上。聚酯類片較佳為以20～100μm的厚度所形成。如同從圖2可理解的，本實施例的聚對苯二甲酸乙二酯片30，係以至少比吸附卡盤21的直徑大，較佳為僅比卡盤台20之圓形框部22的輪廍稍小的直徑所形成。藉此，吸附卡盤21的保持面係整個被聚對苯二甲酸乙二酯片30所覆蓋。另外，在聚對苯二甲酸乙二酯片30之載置於晶圓10與框架F上的載置面側，未形成黏著劑等的黏著層。As shown in FIG. 2, a circular polyester-based sheet, such as a polyethylene terephthalate (PET) sheet 30, which is set to cover the back surface 10 b of the wafer 10, the frame F, and the chuck 21 is prepared, and Placed on the suction chuck 21. The polyester-based sheet is preferably formed in a thickness of 20 to 100 μm. As can be understood from FIG. 2, the polyethylene terephthalate sheet 30 of this embodiment is at least larger than the diameter of the adsorption chuck 21, and preferably only larger than the circular frame portion 22 of the chuck table 20. The wheel hub is formed by a slightly smaller diameter. Thereby, the entire holding surface of the suction chuck 21 is covered with the polyethylene terephthalate sheet 30. In addition, an adhesive layer such as an adhesive is not formed on the placement surface side of the polyethylene terephthalate sheet 30 placed on the wafer 10 and the frame F.
當將晶圓10、框架F與聚對苯二甲酸乙二酯片30載置於卡盤台20的吸附卡盤21上後，使包含吸引幫浦等未圖示的吸引手段運作，並使吸引力Vm作用於吸附卡盤21，以吸引晶圓10、框架F與聚對苯二甲酸乙二酯片30。如上述，藉由聚對苯二甲酸乙二酯片30覆蓋了吸附卡盤21之上表面（保持面）整面，故吸引力Vm會作用於晶圓10、框架F與聚對苯二甲酸乙二酯片30之整體，在將該等吸引保持於吸附卡盤21上的同時，將晶圓10、框架F與聚對苯二甲酸乙二酯片30之間所殘存的空氣吸引並使其密接。根據以上，完成聚酯類片鋪設步驟。After the wafer 10, the frame F, and the polyethylene terephthalate sheet 30 are placed on the suction chuck 21 of the chuck table 20, suction means (not shown) such as a suction pump are operated, and The attractive force Vm acts on the suction chuck 21 to attract the wafer 10, the frame F, and the polyethylene terephthalate sheet 30. As described above, the entire surface of the upper surface (holding surface) of the adsorption chuck 21 is covered with the polyethylene terephthalate sheet 30, so the attractive force Vm acts on the wafer 10, the frame F, and the polyethylene terephthalate. The whole of the ethylene sheet 30 holds the suction on the suction chuck 21 and sucks the air remaining between the wafer 10, the frame F, and the polyethylene terephthalate sheet 30 and makes Its tightly connected. According to the above, the polyester sheet laying step is completed.
（一體化步驟）
當實施上述聚酯類片鋪設步驟後，接著，實施一體化步驟。參照圖3同時說明一體化步驟。(Integration step)
After the above-mentioned polyester sheet laying step is performed, the integration step is then performed. The integration steps will be described with reference to FIG. 3.
圖3（a）中，顯示用以實施一體化步驟的第一個實施方式。在實施一體化步驟時，如圖所示，將用以加熱聚對苯二甲酸乙二酯片30的熱風吹送手段40（僅顯示局部）定位在卡盤台20之上方，其中卡盤台20是在使吸引力Vm對晶圓10、框架F與聚對苯二甲酸乙二酯片30作用而吸引保持的狀態下。雖省略細節，但熱風吹送手段40是構成為，將具備恆溫器（Thermostat）等之溫度調整手段的加熱部配設於面對卡盤台20側的出口側（圖中下側），將藉由馬達等驅動的風扇部配設於相反側（圖中上側），並藉由驅動該加熱部及風扇部朝向卡盤台20吹送熱風L。當將熱風吹送手段40定位在卡盤台20的上方時，藉由熱風吹送手段40至少將熱風L吹送至聚對苯二甲酸乙二酯片30所覆蓋之晶圓10與載置有框架F的整個區域，以使聚對苯二甲酸乙二酯片30在融點附近的250～270℃或從該融點附近的溫度到比該融點附近的溫度低50℃左右的溫度為止之範圍內加熱。藉由此加熱，聚對苯二甲酸乙二酯片30會軟化，而聚對苯二甲酸乙二酯片30以密接的狀態熱壓接合於晶圓10的背面10b與框架F上，以使晶圓10、框架F與聚對苯二甲酸乙二酯片30一體化。另外，實施將聚對苯二甲酸乙二酯片30加熱以與晶圓10熱壓接合的一體化步驟的手段，並不限定於圖3（a）所示的熱風吹送手段40，也可以選擇其他的手段。參照圖3（b）的同時，說明關於其他的手段（第二個實施方式）。Fig. 3 (a) shows a first embodiment for implementing the integration step. During the integration step, as shown in the figure, the hot air blowing means 40 (only a part of which is shown) for heating the polyethylene terephthalate sheet 30 is positioned above the chuck table 20, wherein the chuck table 20 The attraction force Vm is applied to the wafer 10, the frame F, and the polyethylene terephthalate sheet 30 to attract and hold the attraction force Vm. Although the details are omitted, the hot-air blowing means 40 is configured such that a heating section provided with a temperature adjustment means such as a thermostat is arranged on the exit side (lower side in the figure) facing the chuck table 20 side, and will be borrowed A fan section driven by a motor or the like is disposed on the opposite side (upper side in the figure), and drives the heating section and the fan section to blow hot air L toward the chuck table 20. When the hot air blowing means 40 is positioned above the chuck table 20, the hot air blowing means 40 is used to blow at least the hot air L to the wafer 10 covered by the polyethylene terephthalate sheet 30 and the frame F. The entire area of the polyethylene terephthalate sheet 30 in the range from 250 to 270 ° C near the melting point or from a temperature near the melting point to a temperature that is about 50 ° C lower than the temperature near the melting point. Inside heating. By this heating, the polyethylene terephthalate sheet 30 is softened, and the polyethylene terephthalate sheet 30 is thermally bonded to the back surface 10b of the wafer 10 and the frame F in a tight state so that The wafer 10 and the frame F are integrated with a polyethylene terephthalate sheet 30. The means for performing the integrated step of heating the polyethylene terephthalate sheet 30 to thermally bond the wafer 10 is not limited to the hot air blowing means 40 shown in FIG. 3 (a), and may be selected. Other means. Referring to Fig. 3 (b), other means (second embodiment) will be described.
作為實施上述一體化步驟的其他手段，也可以選擇圖3（b）所示的加熱輥手段50（僅顯示局部）。更具體而言，將用以加熱並推壓聚對苯二甲酸乙二酯片30的加熱輥手段50定位在卡盤台20之上方，其中卡盤台20是在使吸引力Vm對晶圓10、框架F與聚對苯二甲酸乙二酯片30作用而吸引保持的狀態下。雖省略細節，但加熱輥手段50具備內藏未圖示之加熱器的加熱輥52以及用以使加熱輥52旋轉的未圖示之旋轉軸，且在加熱輥52的表面上施予氟樹脂加工。當將加熱輥52定位在卡盤台20的上方時，使加熱輥52中內藏的該加熱器運作，推壓聚對苯二甲酸乙二酯片30所覆蓋之晶圓10的背面10b與整個框架F側，並使加熱輥52在以箭頭R1所示方向上旋轉，同時往箭頭X方向移動。加熱輥52中內藏的該加熱器，係調整為聚對苯二甲酸乙二酯片30在融點附近的250～270℃，或從該融點附近的溫度到比該融點附近的溫度低50℃左右的溫度為止之範圍內。藉由此加熱及推壓，與上述熱風吹送手段40相同地，能夠以使聚對苯二甲酸乙二酯片30密接的狀態熱壓接合於晶圓10的背面10b與框架F上，將晶圓10、框架F與聚對苯二甲酸乙二酯片30一體化。再者，作為實施一體化步驟之加熱輥手段50的變化例，取代上述加熱輥52，也可以採用具備加熱器的平板狀推壓構件，將聚對苯二甲酸乙二酯片30加熱、推壓，並將聚對苯二甲酸乙二酯片30熱壓接合於晶圓10與框架F上。此外，熱壓接合手段並不限定為上述各手段，例如，也可以藉由照射紅外線將聚對苯二甲酸乙二酯片30加熱，並與晶圓10及框架F熱壓接合。As another means for implementing the above-mentioned integration step, a heating roller means 50 (only a part is shown) shown in FIG. 3 (b) may be selected. More specifically, the heating roller means 50 for heating and pressing the polyethylene terephthalate sheet 30 is positioned above the chuck table 20, where the chuck table 20 is at the attraction Vm to the wafer 10. The state in which the frame F and the polyethylene terephthalate sheet 30 act and attract and hold. Although the details are omitted, the heating roller means 50 includes a heating roller 52 including a heater (not shown) and a rotation shaft (not shown) for rotating the heating roller 52, and a fluorine resin is applied to the surface of the heating roller 52. machining. When the heating roller 52 is positioned above the chuck table 20, the heater built in the heating roller 52 is operated to push the back surface 10b of the wafer 10 covered with the polyethylene terephthalate sheet 30 and On the entire frame F side, the heating roller 52 is rotated in the direction indicated by arrow R1 while moving in the direction of arrow X. The heater built in the heating roller 52 is adjusted to 250 to 270 ° C near the melting point of the polyethylene terephthalate sheet 30, or from a temperature near the melting point to a temperature higher than the melting point. Within the range of about 50 ° C lower temperature. By this heating and pressing, similar to the above-mentioned hot air blowing means 40, the polyethylene terephthalate sheet 30 can be thermally bonded to the back surface 10b of the wafer 10 and the frame F in a state in which the polyethylene terephthalate sheet 30 is tightly adhered, and the crystal Circle 10, frame F is integrated with polyethylene terephthalate sheet 30. In addition, as a modification of the heating roller means 50 for performing the integration step, instead of the heating roller 52 described above, a flat plate-shaped pressing member including a heater may be used to heat and push the polyethylene terephthalate sheet 30. Press and bond the polyethylene terephthalate sheet 30 to the wafer 10 and the frame F by thermocompression bonding. In addition, the thermocompression bonding means is not limited to the above-mentioned means, and for example, the polyethylene terephthalate sheet 30 may be heated by irradiating infrared rays, and may be thermocompression bonded to the wafer 10 and the frame F.
在本實施例中，接續上述一體化步驟，考慮到後續步驟，實施沿著框架F切斷聚對苯二甲酸乙二酯片30的切斷步驟。另外，此切斷步驟並非絕對必要的步驟，但若實施則較易處理與聚對苯二甲酸乙二酯片30一體化之晶圓10和框架F，有利於後續步驟。以下，參照圖4同時說明關於切斷步驟。In this embodiment, the above-mentioned integration step is continued, and in consideration of the subsequent steps, a cutting step of cutting the polyethylene terephthalate sheet 30 along the frame F is performed. In addition, this cutting step is not absolutely necessary, but if implemented, it is easier to handle the wafer 10 and the frame F integrated with the polyethylene terephthalate sheet 30, which is beneficial to the subsequent steps. Hereinafter, the cutting step will be described with reference to FIG. 4.
（切斷步驟）
如圖4所示，將切斷手段60（僅顯示局部）定位在吸引保持住藉由一體化步驟而一體化之晶圓10、框架F與聚對苯二甲酸乙二酯片30的卡盤台20上。切斷手段60，具備用以切斷聚對苯二甲酸乙二酯片30之圓盤形狀的刀片刀具62（以2點鏈線表示），以及用以將刀片刀具62在以箭頭R2所示方向上旋轉驅動之未圖示的馬達，將刀片刀具62的刀鋒定位在框架F上寬度方向中的大致中央。當刀片刀具62定位在框架F上時，將刀片刀具62僅切入進給聚對苯二甲酸乙二酯片30的厚度，並使卡盤台20在箭頭R2所示方向上旋轉。藉此，聚對苯二甲酸乙二酯片30能夠順著沿框架F之切斷線C被切斷，並將超出切斷線C範圍的聚對苯二甲酸乙二酯片30之外周切斷開來。再者，聚對苯二甲酸乙二酯片30已被熱壓接合於晶圓10的背面10b與框架F上，維持在晶圓10、框架F與聚對苯二甲酸乙二酯片30一體化的狀態。根據以上，完成切斷步驟。(Cutting step)
As shown in FIG. 4, the cutting means 60 (only a part is shown) is positioned to attract and hold the chuck 10, the frame F, and the polyethylene terephthalate sheet 30 integrated by the integration step. On stage 20. The cutting means 60 includes a disc-shaped blade cutter 62 (indicated by a two-dot chain line) for cutting the polyethylene terephthalate sheet 30, and the blade cutter 62 is indicated by an arrow R2. A motor (not shown) that is rotationally driven in the direction positions the blade edge of the blade cutter 62 at approximately the center in the width direction on the frame F. When the blade cutter 62 is positioned on the frame F, the blade cutter 62 is cut into only the thickness of the fed polyethylene terephthalate sheet 30, and the chuck table 20 is rotated in the direction shown by the arrow R2. Thereby, the polyethylene terephthalate sheet 30 can be cut along the cutting line C along the frame F, and the polyethylene terephthalate sheet 30 beyond the range of the cutting line C can be cut peripherally. Disconnect it. Furthermore, the polyethylene terephthalate sheet 30 has been thermally bonded to the back surface 10b of the wafer 10 and the frame F, and is maintained on the wafer 10, the frame F, and the polyethylene terephthalate sheet 30 as one body Turned into a state. Based on the above, the cutting step is completed.
（分割起點形成步驟）
當藉由該切斷步驟切斷聚對苯二甲酸乙二酯片30之外周時，利用雷射加工裝置實施分割起點形成步驟。作為實施分割起點形成步驟的雷射加工方法，例如，能夠選擇一種方法將雷射光束的波長設為對晶圓具有穿透性之波長，並將雷射光束的聚光點定位在第一分割預定線12A與第二分割預定線12B之內部而形成作為分割起點之改質層，或者，一種方法將雷射光束的波長設為對晶圓具有吸收性之波長，並將雷射光束的聚光點定位在第一分割預定線12A與第二分割預定線12B之上表面，藉由燒蝕形成作為分割起點的溝槽。(Step of dividing starting point formation)
When the outer periphery of the polyethylene terephthalate sheet 30 is cut by this cutting step, a division starting point forming step is performed by a laser processing apparatus. As a laser processing method for performing the division starting point forming step, for example, a method can be selected to set the wavelength of the laser beam to a wavelength that is transmissive to the wafer, and position the focusing point of the laser beam at the first division A modified layer serving as a starting point for division is formed inside the predetermined line 12A and the second divided predetermined line 12B, or a method of setting the wavelength of the laser beam to a wavelength that is absorptive to the wafer and condensing the laser beam The light spot is positioned on the upper surface of the first planned division line 12A and the second planned division line 12B, and a groove is formed by ablation as a starting point of the division.
參照圖5，並說明關於在晶圓10的第一分割預定線12A與第二分割預定線12B之內部，形成作為分割起點之改質層的雷射加工之實施態樣。Referring to FIG. 5, a description will be given of an embodiment of laser processing for forming a modified layer as a starting point of division within the first division planned line 12A and the second division planned line 12B of the wafer 10.
在第一分割預定線12A與第二分割預定線12B之內部形成作為分割起點之改質層時，是從晶圓10的背面10b照射雷射光束。於是，如圖5（a）所示，將以上述一體化步驟與框架F一體化之晶圓10的背面10b側朝向上方，以使聚對苯二甲酸乙二酯片30側成為上方，並搬送至圖5（b）所示的雷射加工裝置70（僅顯示局部）。When forming a modified layer as a starting point of division within the first planned division line 12A and the second planned division line 12B, a laser beam is irradiated from the back surface 10 b of the wafer 10. Then, as shown in FIG. 5 (a), the back surface 10b side of the wafer 10 integrated with the frame F in the above-mentioned integration step is directed upward so that the polyethylene terephthalate sheet 30 side is upward, and It is conveyed to the laser processing apparatus 70 shown in FIG.5 (b) (only a part is shown).
圖5（b）所示的雷射加工裝置70是習知的雷射加工裝置，省略了細節，但具備有未圖示的卡盤台、包含聚光器72的雷射光束照射手段等。被搬送至雷射加工裝置70的晶圓10，以聚對苯二甲酸乙二酯片30在上方的方式被載置並保持在該卡盤台上。接著，藉由具備未圖示的紅外線攝像手段之對準手段，進行來自該雷射光束照射手段之聚光器72的雷射光束LB之照射位置與晶圓10的加工位置，亦即，第一分割預定線12A與第二分割預定線12B間的對位（對準步驟）。當此對準步驟結束後，如圖5（b）所示，將雷射光束LB的聚光點定位在晶圓10的內部，將聚光器72與晶圓10在箭頭X所示方向相對地移動並穿越聚對苯二甲酸乙二酯片30照射，沿著第一分割預定線12A形成作為分割起點的改質層100。藉由適當地移動該卡盤台，當沿著所有的第一分割預定線12A形成改質層100後，將該卡盤台90度旋轉，與第一分割預定線12A相同地，沿著第二分割預定線12B在晶圓10的內部形成改質層100。藉由實施以上的雷射加工，完成分割起點形成步驟。The laser processing apparatus 70 shown in FIG. 5 (b) is a conventional laser processing apparatus, and its details are omitted. However, the laser processing apparatus 70 includes a chuck table (not shown), a laser beam irradiation means including a condenser 72, and the like. The wafer 10 transferred to the laser processing apparatus 70 is placed and held on the chuck table so that the polyethylene terephthalate sheet 30 is upward. Next, the irradiation position of the laser beam LB from the condenser 72 of the laser beam irradiation means and the processing position of the wafer 10 are performed by the alignment means provided with an infrared imaging means (not shown), that is, the first Alignment between a predetermined division line 12A and a second predetermined division line 12B (alignment step). After this alignment step is completed, as shown in FIG. 5 (b), the focusing point of the laser beam LB is positioned inside the wafer 10, and the condenser 72 and the wafer 10 are opposed to each other in the direction shown by the arrow X. The modified layer 100 is formed as a starting point of division by moving and irradiating through the polyethylene terephthalate sheet 30 along the first predetermined division line 12A. By appropriately moving the chuck table, after the modified layer 100 is formed along all the first planned division lines 12A, the chuck table is rotated 90 degrees, and the same as the first planned division line 12A, along the first The predetermined dividing line 12B forms a modified layer 100 inside the wafer 10. By performing the above laser processing, the step of forming the starting point for division is completed.
另外，上述形成作為分割起點之改質層100的雷射加工裝置70之雷射加工條件，設定為例如以下所述。
雷射光束的波長：1064nm
重複頻率： 80kHz
平均輸出： 0.5W
加工進給速度： 800mm/sThe laser processing conditions of the laser processing device 70 for forming the reformed layer 100 as the starting point of the division are set as follows, for example.
Laser beam wavelength: 1064nm
Repetition frequency: 80kHz
Average output: 0.5W
Processing feed speed: 800mm / s
本發明的分割起點形成步驟並不限定於上述手段，也可以使用例如圖6所示的雷射加工裝置70’來實施。以下，參照圖6，同時說明關於使用雷射加工裝置70’以實施分割起點形成步驟之別的實施方式。The division starting point forming step of the present invention is not limited to the above-mentioned means, and may be implemented using, for example, a laser processing apparatus 70 'shown in Fig. 6. Hereinafter, with reference to Fig. 6, another embodiment of the laser processing apparatus 70 'for performing the division starting point formation step will be described.
作為實施分割起點形成步驟的其他實施方式，如圖6所示，對晶圓10照射具有吸收性之波長的雷射光束LB’，將雷射光束LB’的聚光點沿著第一分割預定線12A與第二分割預定線12B定位在晶圓10的上表面（正面10a側），並由燒蝕形成作為分割起點之溝槽。As another embodiment for performing the division starting point forming step, as shown in FIG. 6, the wafer 10 is irradiated with a laser beam LB ′ having an absorptive wavelength, and the light-condensing point of the laser beam LB ′ is scheduled along the first division. The line 12A and the second planned division line 12B are positioned on the upper surface (front side 10a side) of the wafer 10, and a trench is formed by ablation as a starting point of the division.
在沿著第一分割預定線12A與第二分割預定線12B在晶圓10的正面10a上形成作為分割起點的溝槽時，如圖6（a）所示，以由上述一體化步驟與框架F一體化之晶圓10的正面10a側作為上方的方式，搬送至圖6（b）所示的雷射加工裝置70’（僅顯示局部）。When a trench is formed on the front surface 10a of the wafer 10 along the first planned division line 12A and the second planned division line 12B, as shown in FIG. 6 (a), the integration step and frame are performed as described above. The front surface 10a side of the F-integrated wafer 10 is transported to the laser processing apparatus 70 'shown in FIG. 6 (b) (only a part is shown) as an upward method.
雷射加工裝置70’是習知的雷射加工裝置，省略了細節，但具備有未圖示的卡盤台、包含聚光器72’的雷射光束照射手段等，被搬送到雷射加工裝置70’的晶圓10，是以晶圓10的正面10a作為上方的方式被載置在該卡盤台上而被吸引保持。接著，藉由具備未圖示的攝像手段之對準手段，進行該雷射光束照射手段之聚光器72’之照射位置與晶圓10的加工位置，亦即，第一分割預定線12A與第二分割預定線12B間的對位（對準步驟）。當對準步驟結束後，如圖6（b）所示，將雷射光束LB’的聚光點定位在晶圓10的正面10a上，使聚光器72’與晶圓10在箭頭X所示方向相對地移動同時照射雷射光束LB’以施行燒蝕加工。藉由使該卡盤台適當地移動，沿著第一分割預定線12A與第二分割預定線12B形成作為分割起點的溝槽110。藉由以上的雷射加工，完成分割起點形成步驟。The laser processing device 70 'is a conventional laser processing device, and the details are omitted. However, the laser processing device 70' is provided with a chuck table (not shown), a laser beam irradiation means including a condenser 72 ', and the like. The wafer 10 of the device 70 'is placed on the chuck table with the front surface 10a of the wafer 10 as the upper side, and is sucked and held. Next, the irradiation position of the condenser 72 'of the laser beam irradiation means and the processing position of the wafer 10 are performed by the alignment means provided with an imaging means (not shown), that is, the first predetermined division line 12A and Alignment between the second predetermined division lines 12B (alignment step). After the alignment step is completed, as shown in FIG. 6 (b), the light-condensing point of the laser beam LB ′ is positioned on the front surface 10 a of the wafer 10, so that the condenser 72 ′ and the wafer 10 are positioned at the arrow X. The laser beams LB 'are moved relative to each other in the direction shown to perform ablation processing. By appropriately moving the chuck table, a groove 110 as a starting point of division is formed along the first planned division line 12A and the second planned division line 12B. With the laser processing described above, the step of forming the starting point for division is completed.
另外，上述形成作為分割起點之溝槽110的雷射加工裝置70’之雷射加工條件，設定為例如以下所述。
雷射光束的波長：355nm
重複頻率： 80kHz
平均輸出： 2.5W
加工進給速度： 800mm/sIn addition, the laser processing conditions of the laser processing apparatus 70 'for forming the groove 110 as the starting point of the division are set as follows, for example.
Laser beam wavelength: 355nm
Repetition frequency: 80kHz
Average output: 2.5W
Processing feed speed: 800mm / s
本發明的分割起點形成步驟並不限定於實施上述的雷射加工方法，也可以選擇其他的手段。例如，也可以對晶圓10從背面10b側將具有穿透性波長的雷射光束的聚光點定位在晶圓10的內部並照射，沿著第一分割預定線12A與第二分割預定線12B形成由細孔與圍繞細孔的非晶質所組成的潛盾通道作為分割起點。The division starting point forming step of the present invention is not limited to the above-mentioned laser processing method, and other methods may be selected. For example, the condensing point of the laser beam having a penetrating wavelength on the wafer 10 may be positioned inside the wafer 10 from the back surface 10b side and irradiated, along the first planned division line 12A and the second planned division line. 12B forms a sub-shield channel composed of a pore and an amorphous material surrounding the pore as a starting point for segmentation.
（分割步驟）
如同上述，當實施分割起點形成步驟後，實施分割步驟。另外，以下所說明的分割步驟，係說明藉由實施上述分割起點形成步驟，在沿著第一分割預定線12A與第二分割預定線12B於晶圓10的內部形成作為分割起點的改質層100之後實施者。(Division step)
As described above, after the division starting point formation step is performed, the division step is performed. In addition, the slicing steps described below are described by implementing the above-mentioned slicing starting point formation step to form a modified layer as a slicing starting point inside the wafer 10 along the first planned division line 12A and the second planned division line 12B. Implementers after 100.
本實施例的分割步驟，至少由對第一分割預定線12A施加外力並分割第一分割預定線的第一分割步驟，以及對第二分割預定線12B施加外力並分割第二分割預定12B線的第二分割步驟所構成。參照圖7，同時說明關於使用分割裝置80而實施的分割步驟。The division step in this embodiment includes at least a first division step in which an external force is applied to the first division line 12A and the first division line is divided, and an external force is applied to the second division line 12B and the second division line 12B is divided. Constituted by the second division step. Referring to FIG. 7, the division steps performed using the division device 80 will be described.
圖7所示分割裝置80，至少具備推壓刀82、一對支撐部83以及未圖示的攝像手段。在實施第一分割步驟時，將晶圓10的正面10a朝向下方並將晶圓10載置於一對支撐部83上。該攝像手段，構成為可以從載置於一對支撐部83上的晶圓10的正面10a側，亦即從下方側拍攝晶圓10，藉由以該攝像手段拍攝晶圓10的第一分割預定線12A，將改質層100所形成的第一分割預定線12A正確地定位在一對支撐部83之間且在推壓刀82的正下方。一對支撐部83是在一方向（圖7中垂直於紙面的Y方向）上延伸，並且以在俯視中夾著如同沿該一方向定位的第一分割預定線12A的方式而定位。定位於一對支撐部83上方的推壓刀82，也與一對支撐部83相同地在該一方向上延伸，藉由未圖示的推壓機構在以箭頭Z所示上下方向中移動。The dividing device 80 shown in FIG. 7 includes at least a pressing blade 82, a pair of support portions 83, and an imaging means (not shown). When the first singulation step is performed, the front surface 10 a of the wafer 10 faces downward, and the wafer 10 is placed on a pair of support portions 83. This imaging means is configured so that the wafer 10 can be photographed from the front side 10 a side of the wafer 10 placed on the pair of support portions 83, that is, from the lower side, and the first division of the wafer 10 can be photographed by the imaging means. The predetermined line 12A accurately positions the first divided predetermined line 12A formed by the modified layer 100 between a pair of support portions 83 and directly below the pressing blade 82. The pair of support portions 83 extend in one direction (the Y direction perpendicular to the paper surface in FIG. 7), and are positioned so as to sandwich the first predetermined division line 12A as if positioned in the one direction in a plan view. The pressing blade 82 positioned above the pair of support portions 83 also extends in the same direction as the pair of support portions 83, and is moved in the up-down direction as indicated by arrow Z by a pressing mechanism (not shown).
如圖7所示，藉由使推壓刀82向晶圓10側沿著箭頭Z下降，以改質層100作為分割起點，沿著第一分割預定線12A分割晶圓10，並形成分割線130。隨後，藉由在以箭頭X所示方向上使推壓刀82與一對支撐部83和晶圓10相對地移動以加工進給，將未分割的第一分割預定線12A移動到推壓刀82正下方且在一對支撐部83之間，反覆進行同樣的分割加工，將推壓刀82按壓且施加外力至所有的第一分割預定線12A並形成分割線130。然後，將晶圓10旋轉90度，使用該攝像手段，將形成有改質層100的第二分割預定線12B正確地定位在推壓刀82的正下方且在一對支撐部83之間，藉由與分割上述第一分割預定線12A相同的步驟進行分割，以形成分割線130。根據以上，晶圓10被分割為一個個元件14，並完成分割步驟。另外，上述分割步驟雖說明為在沿著第一分割預定線12A與第二分割預定線12B於晶圓10的內部形成作為分割起點的改質層100之後實施者，但在分割起點形成步驟中，在第一分割預定線12A與第二分割預定線12B的表面10a上藉由燒蝕形成作為分割起點的溝槽110時，也能夠藉由上述相同手段進行分割。As shown in FIG. 7, the pressing blade 82 is lowered along the arrow Z toward the wafer 10 side, the reforming layer 100 is used as a division starting point, and the wafer 10 is divided along the first planned division line 12A to form a division line. 130. Subsequently, by moving the pressing blade 82 relative to the pair of support portions 83 and the wafer 10 in the direction indicated by the arrow X to process the feed, the undivided first division line 12A is moved to the pressing blade. Immediately below 82 and between a pair of support portions 83, the same dividing process is repeatedly performed, and the pressing blade 82 is pressed and an external force is applied to all of the first planned dividing lines 12A to form dividing lines 130. Then, the wafer 10 is rotated by 90 degrees, and using this imaging means, the second planned division line 12B on which the reformed layer 100 is formed is accurately positioned directly under the pressing blade 82 and between the pair of support portions 83. The division is performed by the same steps as the division of the first predetermined division line 12A to form a division line 130. According to the above, the wafer 10 is divided into individual elements 14 and the division step is completed. In addition, the above-mentioned dividing step is described as being implemented after the reformed layer 100 as the starting point of division is formed inside the wafer 10 along the first dividing line 12A and the second dividing line 12B, but in the dividing point forming step When the trench 110 as the starting point of the division is formed by ablation on the surface 10a of the first planned division line 12A and the second planned division line 12B, division can also be performed by the same method as described above.
當該分割步驟完成後，與保持晶圓10的框架F一起搬送至拾取步驟，一個個元件14從聚對苯二甲酸乙二酯片30上被拾取，並被搬送到接合步驟，或是容納至容納盒等，以搬送至後續步驟。When this singulation step is completed, it is transported to the picking step together with the frame F holding the wafer 10, and the individual components 14 are picked up from the polyethylene terephthalate sheet 30 and transported to the bonding step or accommodated. To the storage box, etc., for transportation to the next step.
根據上述之本實施例的晶圓加工方法，不是藉由在聚酯類片表面塗佈黏著劑等而形成的黏著層來將晶圓10、框架F與聚酯類片（聚對苯二甲酸乙二酯片30）一體化，而是至少將聚酯類片加熱並熱壓接合以將晶圓10與框架F一體化。藉此，不會發生如同具有黏著層的切割膠膜的情況，由於黏著層的部分進入所分割的區域（分割線）中而誘發偏差等的問題，在分割第一分割預定線12A之後，能夠精密地將推壓刀82定位在第二分割預定線12B上，不會使得元件的品質降低。According to the wafer processing method of this embodiment described above, the wafer 10, the frame F, and the polyester sheet (polyterephthalic acid) are not formed by applying an adhesive layer or the like on the surface of the polyester sheet. The ethylene sheet 30) is integrated, but at least the polyester sheet is heated and thermally bonded to integrate the wafer 10 and the frame F. Thereby, problems such as a cutting adhesive film having an adhesive layer do not occur, and a problem such as deviation is induced due to the portion of the adhesive layer entering the divided area (dividing line). After the first predetermined division line 12A is divided, it is possible to Precisely positioning the pressing blade 82 on the second predetermined division line 12B does not cause the quality of the component to be degraded.
另外，若根據本發明並不限定於上述實施方式，並提供各種變化例。在上述實施例中，雖選擇聚對苯二甲酸乙二酯片30作為聚酯類片，但本發明並不限定於此，能夠從聚酯類片中適當地選擇。作為其他的聚酯類片，例如，也可以是聚萘二甲酸乙二醇酯（PEN）片。It should be noted that the present invention is not limited to the above-mentioned embodiment, and various modifications are provided. In the above embodiment, although the polyethylene terephthalate sheet 30 was selected as the polyester-based sheet, the present invention is not limited to this, and can be appropriately selected from the polyester-based sheet. As another polyester-based sheet, for example, a polyethylene naphthalate (PEN) sheet may be used.
在上述實施例中，一體化步驟中將加熱溫度設定在融點附近的250～270℃或從該融點附近的溫度到比該融點附近的溫度低50℃左右的溫度為止之範圍內，本發明並不限定於此，較佳為根據所選擇的聚酯類片的種類來設定加熱溫度。例如，在選擇聚萘二甲酸乙二醇酯片作為聚酯類片的情況下，較佳為將加熱溫度設定在融點附近的160～180℃或從該融點附近的溫度到比該融點附近的溫度低50℃左右的溫度為止之範圍。In the above embodiment, in the integration step, the heating temperature is set at 250 to 270 ° C near the melting point or from a temperature near the melting point to a temperature lower than the temperature near the melting point by about 50 ° C. The present invention is not limited to this, and the heating temperature is preferably set according to the type of the polyester-based sheet selected. For example, when a polyethylene naphthalate sheet is selected as the polyester-based sheet, the heating temperature is preferably set to 160 to 180 ° C. near the melting point or from a temperature near the melting point to a temperature lower than the melting point. The temperature in the vicinity of the point is within a range of about 50 ° C.
在上述實施例中，雖將作為加工對象物的晶圓設為矽（Si）基板，但本發明並不限定於此，也可以構成為由其他素材，例如，藍寶石（Al2 O2 ）基板、碳化矽（SiC）基板、玻璃（SiO2 ）基板所組成。In the above embodiment, although the wafer to be processed is a silicon (Si) substrate, the present invention is not limited to this, and it may be configured by other materials such as a sapphire (Al 2 O 2 ) substrate. , Silicon carbide (SiC) substrate, glass (SiO 2 ) substrate.
10‧‧‧晶圓10‧‧‧ wafer
12A‧‧‧第一分割預定線 12A‧‧‧The first dividing line
12B‧‧‧第二分割預定線 12B‧‧‧Second Split Line
14‧‧‧元件 14‧‧‧ Components
20‧‧‧卡盤台 20‧‧‧Chuck table
21‧‧‧吸附卡盤 21‧‧‧Adsorption Chuck
30‧‧‧聚對苯二甲酸乙二酯片 30‧‧‧Polyethylene terephthalate tablets
40‧‧‧熱風吹送手段 40‧‧‧ Hot air blowing means
50‧‧‧加熱輥手段 50‧‧‧ heating roller means
52‧‧‧加熱輥 52‧‧‧Heating roller
60‧‧‧切斷手段 60‧‧‧ cutting means
62‧‧‧刀片刀具 62‧‧‧Blade cutter
70、70’‧‧‧雷射加工裝置 70, 70’‧‧‧ laser processing device
72‧‧‧聚光器 72‧‧‧ Concentrator
80‧‧‧分割裝置 80‧‧‧ split device
82‧‧‧推壓刀 82‧‧‧Pushing knife
83‧‧‧一對支撐部 83‧‧‧ a pair of support
100‧‧‧改質層 100‧‧‧ Modified layer
110‧‧‧溝槽 110‧‧‧Trench
130‧‧‧分割線 130‧‧‧ dividing line
圖1為表示本實施例之聚酯類片鋪設步驟的實施態樣之立體圖。FIG. 1 is a perspective view showing an embodiment of a step of laying a polyester sheet according to this embodiment.
圖2為表示在圖1所示聚酯類片鋪設步驟中，將聚酯類片載置於卡盤台的態樣之立體圖。 FIG. 2 is a perspective view showing a state in which the polyester-based sheet is placed on a chuck table in the step of laying the polyester-based sheet shown in FIG. 1. FIG.
圖3為表示本實施例之一體化步驟的實施態樣之立體圖。 FIG. 3 is a perspective view showing an embodiment of an integration step in this embodiment.
圖4為表示本實施例之切斷步驟的實施態樣之立體圖。 FIG. 4 is a perspective view showing an embodiment of a cutting step in this embodiment.
圖5為表示本實施例之分割起點形成步驟的一實施態樣之立體圖。 FIG. 5 is a perspective view showing an embodiment of a step of forming a division starting point according to this embodiment.
圖6為表示本實施例之分割起點形成步驟的其他實施態樣之立體圖。 FIG. 6 is a perspective view showing another embodiment of the step of forming the division starting point in this embodiment.
圖7為表示本實施例之分割步驟的實施態樣之側視圖。 FIG. 7 is a side view showing an embodiment of a dividing step in the present embodiment.
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| JP2018-081726 | 2018-04-20 | ||
| JP2018081726A JP7154809B2 (en) | 2018-04-20 | 2018-04-20 | Wafer processing method |
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| JP7282452B2 (en) | 2019-02-15 | 2023-05-29 | 株式会社ディスコ | Wafer processing method |
| JP7277019B2 (en) | 2019-03-05 | 2023-05-18 | 株式会社ディスコ | Wafer processing method |
| JP7282455B2 (en) | 2019-03-05 | 2023-05-29 | 株式会社ディスコ | Wafer processing method |
| JP7313767B2 (en) | 2019-04-10 | 2023-07-25 | 株式会社ディスコ | Wafer processing method |
| JP2020174100A (en) | 2019-04-10 | 2020-10-22 | 株式会社ディスコ | Wafer processing method |
| JP7330615B2 (en) | 2019-05-10 | 2023-08-22 | 株式会社ディスコ | Wafer processing method |
| JP7330616B2 (en) | 2019-05-10 | 2023-08-22 | 株式会社ディスコ | Wafer processing method |
| JP7286245B2 (en) | 2019-06-07 | 2023-06-05 | 株式会社ディスコ | Wafer processing method |
| JP7286247B2 (en) | 2019-06-07 | 2023-06-05 | 株式会社ディスコ | Wafer processing method |
| JP7345973B2 (en) | 2019-08-07 | 2023-09-19 | 株式会社ディスコ | Wafer processing method |
| JP7305268B2 (en) | 2019-08-07 | 2023-07-10 | 株式会社ディスコ | Wafer processing method |
| JP7341606B2 (en) | 2019-09-11 | 2023-09-11 | 株式会社ディスコ | Wafer processing method |
| JP7341607B2 (en) | 2019-09-11 | 2023-09-11 | 株式会社ディスコ | Wafer processing method |
| JP7383338B2 (en) | 2019-10-10 | 2023-11-20 | 株式会社ディスコ | Wafer processing method |
| JP2021064627A (en) | 2019-10-10 | 2021-04-22 | 株式会社ディスコ | Wafer processing method |
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| JP7430515B2 (en) * | 2019-11-06 | 2024-02-13 | 株式会社ディスコ | Wafer processing method |
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| JPS58153352A (en) * | 1982-03-09 | 1983-09-12 | Toshiba Corp | Manufacture of semiconductor device |
| JPS59152639A (en) * | 1983-02-21 | 1984-08-31 | Nec Home Electronics Ltd | Method for provisional fixing of semiconductor wafer |
| JPH10305420A (en) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device |
| JP3408805B2 (en) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | Cutting origin region forming method and workpiece cutting method |
| JP2005191297A (en) | 2003-12-25 | 2005-07-14 | Jsr Corp | Dicing film and cutting method of semiconductor wafer |
| JP4930679B2 (en) | 2005-12-14 | 2012-05-16 | 日本ゼオン株式会社 | Manufacturing method of semiconductor device |
| JP2014170845A (en) * | 2013-03-04 | 2014-09-18 | Nitto Denko Corp | Method for manufacturing semiconductor device, sheet-like resin composition, and dicing tape integrated sheet-like resin composition |
| JP6068386B2 (en) * | 2014-03-31 | 2017-01-25 | 日東電工株式会社 | Thermosetting die bond film, dicing die bond film, and semiconductor device manufacturing method |
| JP2017011592A (en) * | 2015-06-24 | 2017-01-12 | 株式会社ディスコ | Manufacturing method of saw device |
| JP6800167B2 (en) * | 2015-12-25 | 2020-12-16 | 古河電気工業株式会社 | Semiconductor processing tape |
| JP2017147361A (en) * | 2016-02-18 | 2017-08-24 | 株式会社ディスコ | Wafer processing method |
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| TWI802682B (en) | 2023-05-21 |
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