CN113257951B - Preparation method of sliced battery and laser equipment - Google Patents
Preparation method of sliced battery and laser equipment Download PDFInfo
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- CN113257951B CN113257951B CN202110341831.5A CN202110341831A CN113257951B CN 113257951 B CN113257951 B CN 113257951B CN 202110341831 A CN202110341831 A CN 202110341831A CN 113257951 B CN113257951 B CN 113257951B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 238000002347 injection Methods 0.000 claims abstract description 114
- 239000007924 injection Substances 0.000 claims abstract description 114
- 238000011282 treatment Methods 0.000 claims abstract description 63
- 238000012545 processing Methods 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000002161 passivation Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 9
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- 230000000052 comparative effect Effects 0.000 description 5
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- 238000004140 cleaning Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 206010041662 Splinter Diseases 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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Abstract
The embodiment of the disclosure provides a preparation method of a sliced battery and laser equipment, and belongs to the technical field of solar batteries. The preparation method of the sliced battery comprises a scribing treatment step and a light injection treatment step, wherein the light injection treatment step and the scribing treatment step are completed in different chambers or the same chamber of the same laser device. Carry out the scribing and handle and light injection processing to the battery piece through using same platform laser equipment, avoid removing it to different equipment platform when carrying out two different processings to the battery piece, thereby improve the preparation efficiency of section battery, and can reduce equipment occupation of land, and adopt the preparation order of light injection after the scribing earlier, the surface of the battery piece after the scribing is handled has the tangent plane, compare in the preparation order of scribing after the light injection earlier among the prior art, can make tangent plane department have the passivation effect or strengthen the passivation effect of tangent plane department when accomplishing light injection, reduce the loss of section battery total efficiency.
Description
Technical Field
The disclosure relates to the technical field of solar cells, in particular to a preparation method of a sliced cell and laser equipment.
Background
In recent years, with the continuous breakthrough of the technical bottleneck of the solar cell, the development of high-efficiency cells and modules is more and more emphasized by people. With the popularization of large-size silicon wafers, the technology of low-internal-consumption sliced cell components (such as half-pieces, split pieces, laminated tiles and the like) is bound to become the future mainstream trend of photovoltaic components.
Aiming at the slicing technology, the slicing efficiency loss is overlarge due to the technical difficulty in the industry. Taking a heterojunction battery as an example, the conventional half-sliced heterojunction battery in the industry at present has the following preparation process: the method comprises the following steps of texturing cleaning, front and back amorphous silicon film layer deposition, front and back TCO film layer deposition, printing and curing, LED light injection treatment and laser scribing. The efficiency loss of the half-cut heterojunction battery prepared by the process is about 0.3%. For the conventional cutting mode, the main sources of efficiency loss are laser heat loss, splinter loss, passivation defect loss at a section and the like.
Disclosure of Invention
In view of the above, embodiments of the present disclosure provide a method for manufacturing a dicing cell and a laser device, which at least partially solve the problems in the prior art.
In a first aspect, an embodiment of the present disclosure provides a method for preparing a sliced battery, including a dicing processing step and a light injection processing step, where the light injection processing step and the dicing processing step are completed in different chambers or the same chamber of the same laser apparatus.
Optionally, when the scribing processing step and the light injection processing step are completed in different chambers of the same laser device, the different chambers are respectively provided with a first laser light source and a second laser light source, and the second laser light source is a laser light source different from the first laser light source;
in the scribing treatment step, scribing is carried out by utilizing the first laser light source;
in the light injection step, the second laser light source is used for light injection treatment.
Optionally, the first laser light source is selected from an infrared laser light source, a green laser light source or an ultraviolet laser light source;
the second laser light source is selected as an infrared laser light source.
Optionally, when the scribing processing step and the light injection processing step are completed in different chambers of the same laser device, the different chambers are respectively provided with a third laser light source and an LED light source;
in the scribing treatment step, scribing is carried out by utilizing the third laser light source;
and in the light injection step, the LED light source is utilized to perform light injection treatment.
Optionally, when the scribing processing step and the light injection processing step are completed in the same chamber of the same laser device, a fourth laser light source and a fifth laser light source are provided in the chamber, and the fourth laser light source is a laser light source different from the fifth laser light source;
in the scribing treatment step, scribing is carried out by utilizing the fourth laser light source;
in the light injection step, the fifth laser light source is used for light injection treatment.
Optionally, the fourth laser light source is selected from an infrared laser light source, a green laser light source or an ultraviolet laser light source;
the fifth laser light source is selected as an infrared laser light source.
Optionally, the dicing process step precedes the light injection process step.
Optionally, in the dicing processing step, the dicing depth is any value in a range of greater than or equal to 30%;
optionally, in the dicing processing step, the number of the cut pieces is greater than or equal to 2.
Optionally, in the light injection processing step, the light injection intensity is any value in the range of 10 to 200suns, and the light injection time is any value in the range of 10 to 900 s;
optionally, in the light injection processing step, the light injection intensity range is any value in the range of 50-120 suns;
optionally, in the light injection processing step, the light injection time is any value in the range of 10 to 60 s;
optionally, in the light injection processing step, the surface temperature of the cell piece subjected to dicing processing is controlled to be any value within the range of 190 ℃ and 250 ℃.
In a second aspect, embodiments of the present disclosure provide a laser apparatus including a chamber for providing a processing space for a scribing processing step and a light injection processing step in the preparation method as described above.
The embodiment of the disclosure provides a preparation method of a sliced battery, which is characterized in that the same laser equipment is used for carrying out scribing treatment and light injection treatment on a battery piece, so that the battery piece is prevented from being moved to different equipment platforms when being subjected to two different treatments, the preparation efficiency of the sliced battery is improved, and the occupied area of the equipment can be reduced.
Furthermore, the embodiment of the disclosure adopts a preparation sequence of scribing first and then light injection, and the surface of the scribed battery piece has a cut surface, so that compared with the preparation sequence of scribing first and then light injection in the prior art, the passivation effect on the cut surface can be achieved or enhanced while light injection is completed, and the loss of the total efficiency of the sliced battery is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings needed to be used in the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for manufacturing a sliced battery according to an embodiment of the present disclosure;
fig. 2 is a schematic flow chart of a method for manufacturing a sliced battery according to an embodiment of the present disclosure.
Detailed Description
The embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.
The embodiments of the present disclosure are described below with specific examples, and other advantages and effects of the present disclosure will be readily apparent to those skilled in the art from the disclosure in the specification. It is to be understood that the described embodiments are merely illustrative of some, and not restrictive, of the embodiments of the disclosure. The disclosure may be embodied or carried out in various other specific embodiments, and various modifications and changes may be made in the details within the description without departing from the spirit of the disclosure. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.
It is noted that various aspects of the embodiments are described below within the scope of the appended claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the disclosure, one skilled in the art should appreciate that one aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, the methods of making the diced cells and laser apparatus can be implemented using any number of aspects set forth herein. In addition, the method of making such a diced cell and laser apparatus can be implemented using other structures and/or functionalities in addition to one or more of the aspects set forth herein.
In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects may be practiced without these specific details.
It is understood that the preparation method of the cut-off cell generally includes a plurality of steps, and the dicing step and the light injection step are two steps, and the preparation method of the different types of cut-off cells is different, and the preparation process of the cut-off cell by the PERC may include: etching and cleaning, high-temperature diffusion, etching and polishing, back alumina film layer deposition, front silicon nitride film layer deposition, back laser grooving, printing and sintering, light injection/electric injection treatment and scribing treatment. Taking the heterojunction cell as an example, the preparation method of the heterojunction cell can comprise the steps of etching cleaning, front and back amorphous silicon film layer deposition, front and back TCO film layer deposition, printing curing, light injection treatment and scribing treatment. In the embodiment of the present disclosure, only two steps of the light injection process and the dicing process are focused, and other steps may be steps in the prior art.
Referring to fig. 1, a method for manufacturing a diced battery is provided for an embodiment of the present disclosure, and the method includes a dicing processing step and a light injection processing step, where the light injection processing step and the dicing processing step are performed in different chambers or the same chamber of the same laser apparatus.
According to the preparation method of the sliced battery provided by the embodiment of the disclosure, the battery piece is subjected to scribing treatment and light injection treatment by using the same laser device, and the battery piece is prevented from being moved to different device platforms when being subjected to two different treatments, so that the preparation efficiency of the sliced battery is improved, and the occupied area of the device can be reduced.
In one embodiment, the scribing step and the light injection step are performed in different chambers of the same laser device, and the different chambers respectively have a first laser light source and a second laser light source, and the second laser light source is a laser light source different from the first laser light source. And in the scribing treatment step, scribing is carried out by using a first laser light source, and in the light injection step, light injection is carried out by using a second laser light source.
The first laser light source can be selected from an infrared laser light source, a green laser light source or an ultraviolet laser light source. The second laser light source is selected to be an infrared laser light source. The first laser light source and the second laser light source are different laser light sources, and obviously, when the first laser light source is selected as a green laser light source or an ultraviolet laser light source, the second laser light source is an infrared laser light source, and the first laser light source and the second laser light source are two different laser light sources. When the first laser light source and the second laser light source are both infrared laser light sources, the two infrared laser light sources can be respectively selected to be a near-infrared laser light source and a far-infrared laser light source.
In another embodiment, the scribing step and the light injection step are performed in different chambers of the same laser device, the different chambers are respectively provided with a third laser light source and an LED light source, the scribing step is performed by using the third laser light source, and the light injection step is performed by using the LED light source. The third laser light source can be selected from an infrared laser light source, a green laser light source or an ultraviolet laser light source.
In yet another embodiment, the scribing step and the light injection step are performed in the same chamber of the same laser device, the chamber has a fourth laser light source and a fifth laser light source, the fourth laser light source is a laser light source different from the fifth laser light source, the scribing step uses the fourth laser light source to scribe, and the light injection step uses the fifth laser light source to perform light injection. The fourth laser light source is selected as an infrared laser light source, a green laser light source or an ultraviolet laser light source, and the fifth laser light source is selected as an infrared laser light source. The selection principle of the fourth laser light source and the fifth laser light source is respectively consistent with that of the first laser light source and that of the second laser light source, and the details are not repeated here.
In a further embodiment, the dicing process step precedes the light injection process step. The preparation order of scribing earlier back light injection is adopted in this disclosed embodiment, and the surface of the battery piece after the scribing is handled has the tangent plane, compares in the preparation order of preceding light injection back scribing among the prior art, can make the tangent plane department have the passivation effect or strengthen the passivation effect of tangent plane department when accomplishing light injection to reduce the loss of section battery total efficiency, thereby promote battery efficiency.
In one embodiment, in the dicing process step, the dicing depth is any value ranging from greater than or equal to 30%, and may be, for example, 30%, 40%, 50%, 60%, 70%, 80%, 90%, or 100%. Preferably, the dicing depth is any value in the range of 50% -60%, for example, it may be 50%, 53%, 55%, 58% or 60%. It is understood that the battery cell is not yet split when the scribing depth is less than 100%, and the battery cell is directly scribed when the scribing depth is 100%. The number of the chips after the scribing treatment is more than or equal to 2, and the selection of the number of the chips can be carried out according to the type of the assembly product.
In the light injection treatment step, the light injection intensity is any value in the range of 10-200suns, and may be, for example, 10suns, 50suns, 100suns or 200 suns. Preferably, the light injection intensity is any value in the range of 50-120suns, and may be, for example, 50suns, 70suns, 90suns, 110suns, or 120 suns. The light injection time is any value in the range of 10 to 900s, and may be, for example, 10s, 50s, 100s, 200s, 300s, 400s, 500s, 600s, 700s, 800s, or 900 s. Preferably, the light injection time is any value in the range of 10-60s, and may be, for example, 10s, 20s, 30s, 40s, 50s, or 60 s.
In the light injection treatment step, the surface temperature of the cell piece subjected to the dicing treatment is controlled to be any value within the range of 190 ℃ and 250 ℃, and the surface temperature of the cell piece can be 190 ℃, 200 ℃, 220 ℃, 230 ℃ or 250 ℃.
The above parameters work together, and a change in one of the parameters affects the effect of the final light injection process. When the parameters are in the corresponding numerical value ranges, the laser injection efficiency gain is high, and when the parameters are not in the corresponding numerical value ranges, the laser injection treatment is ineffective, or the battery structure is damaged due to overhigh intensity, so that the battery piece is invalid.
The following is a detailed description of a heterojunction cell as an example:
the first embodiment is as follows:
referring to fig. 2, a method for manufacturing a sliced battery is provided for the embodiment of the present disclosure, and the method includes etching cleaning, front and back amorphous silicon film layer deposition, front and back TCO film layer deposition, printing curing, scribing processing, and light injection processing, where the light injection processing step and the scribing processing step are completed in different chambers of the same laser device.
Different chambers of the laser device are respectively provided with a first laser light source and a second laser light source, and scribing is carried out by utilizing the first laser light source in the scribing step. The light injection step is performed by using a second laser light source, and the scribing step is performed after the light injection step. The first laser light source and the second laser light source are both infrared laser light sources. The dicing number of the dicing treatment step was two, and the dicing depth was 50%.
In the light injection treatment step, the laser injection intensity is 80suns, the light injection time is 15s, and the temperature is controlled by a temperature control console to be 210 ℃.
Through using same laser equipment to carry out scribing processing and light injection processing to the battery piece, avoid removing it to different equipment platform when carrying out two different processings to the battery piece to improve the preparation efficiency of section battery, and can reduce equipment and take up an area of.
Accordingly, this embodiment also provides a corresponding laser apparatus, which includes a chamber for providing a processing space for the aforementioned dicing processing step and light injection processing step. The laser equipment integrates a laser scribing technology and a laser light injection technology, and firstly carries out laser light injection treatment on the loaded battery piece and then carries out laser light injection laser scribing treatment.
The laser equipment is integrated equipment, integrates a laser scribing technology and a laser light injection technology, can simplify the battery preparation process, reduces the equipment floor area, and reduces the equipment investment and the operation and maintenance cost.
The second embodiment:
the second embodiment of the present disclosure is different from the first embodiment in that the dicing step is before the light injection step. Correspondingly, according to the laser device provided in this embodiment, the laser scribing process is performed on the loaded battery piece first, and then the laser light injection process is performed.
Compared with the first embodiment, the second embodiment can carry out passivation strengthening repair on the defect when the laser light injection treatment is carried out.
Example three:
the third embodiment of the present disclosure is different from the second embodiment in that the dicing depth in the dicing process step is 100%.
Example four:
the difference between the fourth embodiment of the present disclosure and the second embodiment is that in the fourth embodiment, the temperature controlled by the temperature air conditioner is 240 ℃.
Example five:
the difference between the fifth embodiment and the second embodiment of the present disclosure is that in the fifth embodiment, different chambers of the laser apparatus respectively have the third laser light source and the LED light source. The third laser light source is selected from an infrared laser light source, a green laser light source or an ultraviolet laser light source. And in the scribing treatment step, scribing is carried out by using a third laser light source. In the light injection step, an LED light source is used for light injection treatment.
Accordingly, this embodiment also provides a corresponding laser apparatus, which includes a chamber for providing a processing space for the aforementioned dicing processing step and light injection processing step. The laser equipment integrates a laser scribing technology and an LED light injection technology, firstly carries out laser scribing treatment on the loaded battery piece, and then carries out LED light injection treatment.
Compared with the second embodiment, the fifth embodiment does not perform passivation strengthening repair on the defect when the LED light injection treatment is performed.
Comparative example:
this comparative example is a prior art, and differs from example one in that the light injection processing step and the dicing processing step are separately performed in two facilities, and the light injection processing step precedes the dicing processing step. And scribing the battery piece by using infrared laser to form a half-sliced battery piece. The light injection treatment step is LED light injection, the injection intensity is 80suns, the temperature is controlled to be 215 ℃, and the light injection time is 30 s.
The experimental results of the above examples one to five and comparative examples are shown in the following table 1:
TABLE 1
As can be seen from table 1, the battery efficiencies of the solutions of examples one to five were improved by 0.12 to 0.15% as compared with the solution of comparative example. In the second embodiment, the efficiency is improved by 0.12% compared with the comparative example by adopting the laser scribing treatment and the laser light injection treatment, wherein FF and U oc The improvement is obvious mainly because the laser light injection treatment process can carry out annealing passivation treatment on the cut section of the cut cell, the edge effect influence of the half-cut cell is reduced, and thereby the FF and U of the cell are realized oc And is improved to a certain extent. In the third embodiment, different from the second embodiment, the laser scribing process is 100% deep cutting, which is direct cleaving, and the efficiency of this group is slightly higher by 0.03% than that of the second embodiment, mainly because the direct cleaving increases the passivation area at the section in the laser light injection process, thereby slightly improving the efficiency. In the fourth embodiment, different from the second embodiment, in the laser light injection process, the temperature is controlled to be 30 ℃ higher than that in the second embodiment, so that the final efficiency is low, and mainly because the temperature is too high, the amorphous silicon layer in the heterojunction cell structure is damaged, thereby affecting the whole passivation effect.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present disclosure should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. The preparation method of the sliced battery is characterized by comprising a scribing treatment step and a light injection treatment step, wherein the light injection treatment step and the scribing treatment step are completed in different chambers or the same chamber of the same laser device.
2. The preparation method according to claim 1, wherein the scribing treatment step and the light injection treatment step are performed in different chambers of the same laser device, the different chambers are respectively provided with a first laser light source and a second laser light source, and the second laser light source is a laser light source different from the first laser light source;
in the scribing treatment step, scribing is carried out by utilizing the first laser light source;
in the light injection step, the second laser light source is used for light injection treatment.
3. The preparation method according to claim 2, wherein the first laser light source is selected from an infrared laser light source, a green laser light source or an ultraviolet laser light source;
the second laser light source is selected as an infrared laser light source.
4. The preparation method according to claim 1, wherein the scribing treatment step and the light injection treatment step are performed in different chambers of the same laser device, and the different chambers are respectively provided with a third laser light source and an LED light source;
in the scribing treatment step, scribing is carried out by utilizing the third laser light source;
and in the light injection step, the LED light source is utilized to perform light injection treatment.
5. The preparation method according to claim 1, wherein the scribing treatment step and the light injection treatment step are performed in the same chamber of the same laser device, and the chamber has a fourth laser light source and a fifth laser light source therein, and the fourth laser light source is a laser light source different from the fifth laser light source;
in the scribing treatment step, scribing is carried out by utilizing the fourth laser light source;
in the light injection step, the fifth laser light source is used for light injection treatment.
6. The preparation method according to claim 5, wherein the fourth laser light source is selected from an infrared laser light source, a green laser light source or an ultraviolet laser light source;
the fifth laser light source is selected as an infrared laser light source.
7. The method for manufacturing according to any one of claims 1 to 6, wherein the dicing treatment step precedes the light injection treatment step.
8. The production method according to claim 7, wherein in the dicing treatment step, the dicing depth is any value ranging from greater than or equal to 30%;
in the dicing processing step, the number of the cut pieces is greater than or equal to 2.
9. The manufacturing method according to claim 7, wherein in the light injection treatment step, the light injection intensity is any value in the range of 10 to 200suns, and the light injection time is any value in the range of 10 to 900 s;
in the light injection treatment step, the light injection intensity range is any value in the range of 50-120 suns;
in the light injection processing step, the light injection time is any value in the range of 10 to 60 s;
in the light injection processing step, the surface temperature of the battery piece subjected to scribing processing is controlled to be any value within the range of 190 ℃ and 250 ℃.
10. A laser apparatus comprising a chamber for providing a processing space for the dicing processing step and the light injection processing step in the manufacturing method according to any one of claims 1 to 9.
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| CN111816557A (en) * | 2020-07-20 | 2020-10-23 | 浙江晶科能源有限公司 | Solar cell cutting method, solar cell cutting equipment and photovoltaic module |
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| CN110867498A (en) * | 2019-08-21 | 2020-03-06 | 晋能清洁能源科技股份公司 | Preparation method of sliced battery |
| CN111816557A (en) * | 2020-07-20 | 2020-10-23 | 浙江晶科能源有限公司 | Solar cell cutting method, solar cell cutting equipment and photovoltaic module |
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