CN110867498A - Preparation method of sliced battery - Google Patents
Preparation method of sliced battery Download PDFInfo
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- CN110867498A CN110867498A CN201910771774.7A CN201910771774A CN110867498A CN 110867498 A CN110867498 A CN 110867498A CN 201910771774 A CN201910771774 A CN 201910771774A CN 110867498 A CN110867498 A CN 110867498A
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- battery
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- original silicon
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 238000005520 cutting process Methods 0.000 claims abstract description 39
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 16
- 230000006378 damage Effects 0.000 abstract description 6
- 238000002161 passivation Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention discloses a preparation method of a sliced battery. It comprises the following steps: A. pre-cutting the original silicon wafer: when precutting, cutting the original silicon wafer by using laser, wherein the cutting depth is less than or equal to 90% of the thickness of the original silicon wafer; B. preparing a primary silicon wafer to form a double-sided structure battery; C. and splitting and separating the prepared double-sided structure battery along the precut cutting mark. The advantages are that: the problem that a certain damage can be caused to the battery piece in the traditional laser scribing and mechanical splitting process is solved, the problem that a short circuit is formed on a cutting surface by a current carrier generated inside the battery piece is solved, the damage and electric leakage conditions of the battery piece are basically not damaged nearby the cutting line after the battery piece is split, in addition, the problem that the passivation layer of a scribing area is thermally damaged can not be caused due to the fact that the laser scribing and mechanical splitting are not directly adopted, the process method breaks through the existing limitation, and finally the battery efficiency and various electrical performance indexes before and after the battery piece is split are guaranteed.
Description
Technical Field
The invention relates to a cell preparation technology, in particular to a slice cell preparation method, and belongs to the technical field of photovoltaic solar cell manufacturing.
Background
In recent years, the photovoltaic technology is rapidly developed and widely applied, and the market requires that the photovoltaic module simultaneously has comprehensive requirements of high power, high power generation capacity under any installation condition, low attenuation and low cost, so that the electricity consumption cost is further reduced. The high power of the component is the most direct and powerful channel for promoting 'flat-price internet surfing', and the power of the component is improved mainly from two aspects: the internal luminous flux is improved, and the internal electric loss is reduced; the slice battery component technology with low internal consumption has the advantage of unique thickness in large-scale application.
The sliced battery is obtained after the standard battery is cut, the internal current of the sliced battery is reduced in proportion to the size of a cutting area, the power loss of the battery is reduced along with the reduction of the current, and the power loss is generally in proportion to the square of the current. The conventional cell slice dicing technology in the industry is to scribe conventional complete cell slices by using laser and then mechanically split the slices. In the process of laser scribing and mechanical splitting, certain damage can be caused to a battery piece, the battery-hole recombination at the cutting position is increased, and a short circuit is easily formed at the cutting surface by current carriers generated inside the battery piece, and particularly for high-efficiency batteries such as heterojunction and the like, in the scribing process, the laser can cause thermal damage to a passivation layer in the cutting scribing area.
Disclosure of Invention
The invention aims to solve the technical problem of providing a preparation method of a sliced battery, which can pre-cut a primary silicon wafer to a certain depth, then prepare a battery piece on the pre-cut primary silicon wafer, and finally separate the battery piece by splitting.
In order to solve the technical problem, the preparation method of the sliced battery comprises the following steps:
A. pre-cutting the original silicon wafer: when precutting, cutting the original silicon wafer by using laser, wherein the cutting depth is less than or equal to 90% of the thickness of the original silicon wafer;
B. preparing a primary silicon wafer to form a double-sided structure battery;
C. and splitting and separating the prepared double-sided structure battery along the precut cutting mark.
And the number of the cutting pieces of the whole original silicon wafer in the step A is more than or equal to 2.
The preparation process of the double-sided structure battery comprises the following steps: texturing and cleaning an original silicon wafer to form a textured light trapping surface, respectively depositing intrinsic amorphous silicon and doped amorphous silicon on the front and back surfaces of the textured light trapping surface, depositing a TCO transparent conductive film on the surface of the doped amorphous silicon, and finally metalizing to form the double-sided structure battery.
The depth of the cut of the original silicon wafer subjected to laser precutting is 15% of the thickness of the original silicon wafer.
The invention has the advantages that:
the process comprises the steps of pre-cutting the original silicon wafer to a certain depth, preparing the pre-cut original silicon wafer, and finally splitting and separating the battery piece, so that the problem that the battery piece is damaged to a certain extent in the traditional laser scribing and mechanical splitting processes is avoided, the problem that a short circuit is formed at the cutting surface by a current carrier generated inside the battery piece is avoided, the battery piece basically has no damage and electric leakage conditions near the cutting line after the battery piece is split, in addition, the problem that the passivation layer in the cutting scribing area is thermally damaged can not be caused due to the fact that the laser scribing and mechanical splitting are not directly adopted, the process method breaks through the existing limitation, and the battery efficiency before and after the battery piece is split and various electrical performance indexes are finally guaranteed.
Drawings
FIG. 1 is a flowchart of a method for manufacturing a sliced battery according to the present embodiment;
FIG. 2 is a PL image of the first embodiment of the present invention
FIG. 3 is an IR image according to a first embodiment of the present invention;
FIG. 4 is a PL image of a second embodiment of the present invention
FIG. 5 is an IR image of the second embodiment of the present invention.
Detailed Description
The method for manufacturing a sliced battery according to the present invention will be described in detail with reference to the accompanying drawings and embodiments.
The first embodiment is as follows:
as shown in the figure, the preparation method of the sliced battery in this embodiment, taking a half-sliced heterojunction battery as an example, includes the following steps:
A. pre-cutting the original silicon wafer: when precutting, cutting the original silicon wafer by using laser, wherein the cutting depth is 15% of the thickness of the original silicon wafer, and the number of the cut pieces of the whole original silicon wafer is 2;
B. the preparation process of the heterojunction battery comprises the following steps: texturing and cleaning a primary silicon wafer to form a textured light trapping surface, respectively depositing intrinsic amorphous silicon and doped amorphous silicon on the front and back surfaces of the primary silicon wafer, depositing a TCO transparent conductive film on the surface of the doped amorphous silicon, and finally performing screen printing to form a double-sided heterojunction structure cell;
C. and splitting and separating the prepared double-sided heterojunction structure battery along the pre-cutting direction.
Example two:
as shown in the figure, the method for manufacturing a sliced battery of the embodiment includes the following steps:
A. pre-cutting the original silicon wafer: when precutting, cutting the original silicon wafer by using laser, wherein the cutting depth is 1% of the thickness of the original silicon wafer, and the number of the cut pieces of the whole original silicon wafer is 3;
B. texturing and cleaning a primary silicon wafer to form a textured light trapping surface, respectively depositing intrinsic amorphous silicon and doped amorphous silicon on the front and back surfaces of the primary silicon wafer, depositing a TCO transparent conductive film on the surface of the doped amorphous silicon, and finally metalizing to form a double-sided structure battery;
C. and splitting and separating the prepared double-sided structure battery along the direction of the precut cutting mark.
Example three:
as shown in the figure, the method for manufacturing a sliced battery of the embodiment includes the following steps:
A. pre-cutting the original silicon wafer: when precutting, cutting the original silicon wafer by using laser, wherein the cutting depth is 90% of the thickness of the original silicon wafer, and the number of the cut pieces of the whole original silicon wafer is 5;
B. texturing and cleaning a primary silicon wafer to form a textured light trapping surface, respectively depositing intrinsic amorphous silicon and doped amorphous silicon on the front and back surfaces of the primary silicon wafer, depositing a TCO transparent conductive film on the surface of the doped amorphous silicon, and finally metalizing to form a double-sided structure battery;
C. and splitting and separating the prepared double-sided structure battery along the direction of the precut cutting mark.
The following half-sliced heterojunction cell prepared by the method for preparing a sliced cell in example one and the heterojunction cell prepared by slicing using the conventional technique were verified, and the test results were as follows:
1. through the characterization verification of the battery terminal in the first embodiment, the results are as follows:
the battery terminal electrical performance is verified, the battery efficiency of the half-cut battery piece prepared by the process method is basically not changed greatly before and after splitting (no reduction condition occurs), the battery piece after splitting basically has no damage or electric leakage condition near the cutting line, and PL and IR images are shown in fig. 2 and fig. 3.
2. Use conventional technology to carry out the preparation of section battery, in order to make the parameter unification, guarantee the accuracy of result, carry out heterojunction battery preparation earlier according to the preparation flow of the heterojunction battery of step B in the technical scheme, use laser to cut the battery piece, form half-slicer battery piece, the battery end is characterized and is verified, and the result is as follows:
the battery end electrical performance is verified, the efficiency of the heterojunction battery piece after being sliced is reduced by 0.3%, and various electrical performance indexes are reduced to different degrees; the cell pieces after slicing were damaged and leaked near the cutting lines, and PL and IR images are shown in fig. 4 and 5.
The comparative example data shows that the damage caused by the conventional slicing battery piece in the cutting process can be solved by using the preparation method disclosed by the invention.
Claims (4)
1. The preparation method of the sliced battery is characterized by comprising the following steps of:
A. pre-cutting the original silicon wafer: when in precutting, the original silicon wafer is cut by laser, the cutting depth is less than or equal to 90% of the thickness of the original silicon wafer, and the number of the whole cutting pieces is more than or equal to 2;
B. preparing a primary silicon wafer to form a double-sided structure battery;
C. and splitting and separating the prepared double-sided structure battery along the precut cutting mark.
2. The method for producing a sliced battery as defined in claim 1, wherein: the number of the cutting pieces of the whole original silicon wafer in the step A is more than or equal to 2.
3. The method for producing a sliced battery as defined in claim 1 or 2, wherein: the preparation process of the double-sided structure battery comprises the following steps: texturing and cleaning an original silicon wafer to form a textured light trapping surface, respectively depositing intrinsic amorphous silicon and doped amorphous silicon on the front and back surfaces of the textured light trapping surface, depositing a TCO transparent conductive film on the surface of the doped amorphous silicon, and finally metalizing to form the double-sided structure battery.
4. The method for producing a sliced battery as defined in claim 3, wherein: the depth of the cut of the original silicon wafer subjected to laser precutting is 15% of the thickness of the original silicon wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910771774.7A CN110867498A (en) | 2019-08-21 | 2019-08-21 | Preparation method of sliced battery |
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| CN201910771774.7A CN110867498A (en) | 2019-08-21 | 2019-08-21 | Preparation method of sliced battery |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111916533A (en) * | 2020-08-28 | 2020-11-10 | 苏州联诺太阳能科技有限公司 | Preparation method of sliced cell, sliced cell and photovoltaic module |
| CN113036002A (en) * | 2021-03-04 | 2021-06-25 | 苏州联诺太阳能科技有限公司 | Solar cell preparation method |
| CN113257951A (en) * | 2021-03-30 | 2021-08-13 | 苏州联诺太阳能科技有限公司 | Preparation method of sliced battery and laser equipment |
Citations (5)
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| CN101281936A (en) * | 2008-04-24 | 2008-10-08 | 珈伟太阳能(武汉)有限公司 | Method for cutting pedion fingerlike staggered solar battery sheet |
| CN103151426A (en) * | 2013-03-19 | 2013-06-12 | 四川钟顺太阳能开发有限公司 | Solar battery cutting technique for guaranteeing electrical performance of solar battery |
| CN105336812A (en) * | 2015-09-08 | 2016-02-17 | 深圳市迪晟能源技术有限公司 | Method for cutting full-back-contact crystalline silicon solar cell |
| CN106374014A (en) * | 2016-11-22 | 2017-02-01 | 无锡奥特维科技股份有限公司 | Cell breaking device |
| CN110085702A (en) * | 2019-04-19 | 2019-08-02 | 通威太阳能（成都）有限公司 | A kind of high-efficiency photovoltaic battery production method that laser cutting loss is effectively reduced |
-
2019
- 2019-08-21 CN CN201910771774.7A patent/CN110867498A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101281936A (en) * | 2008-04-24 | 2008-10-08 | 珈伟太阳能(武汉)有限公司 | Method for cutting pedion fingerlike staggered solar battery sheet |
| CN103151426A (en) * | 2013-03-19 | 2013-06-12 | 四川钟顺太阳能开发有限公司 | Solar battery cutting technique for guaranteeing electrical performance of solar battery |
| CN105336812A (en) * | 2015-09-08 | 2016-02-17 | 深圳市迪晟能源技术有限公司 | Method for cutting full-back-contact crystalline silicon solar cell |
| CN106374014A (en) * | 2016-11-22 | 2017-02-01 | 无锡奥特维科技股份有限公司 | Cell breaking device |
| CN110085702A (en) * | 2019-04-19 | 2019-08-02 | 通威太阳能（成都）有限公司 | A kind of high-efficiency photovoltaic battery production method that laser cutting loss is effectively reduced |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111916533A (en) * | 2020-08-28 | 2020-11-10 | 苏州联诺太阳能科技有限公司 | Preparation method of sliced cell, sliced cell and photovoltaic module |
| CN111916533B (en) * | 2020-08-28 | 2023-03-24 | 苏州联诺太阳能科技有限公司 | Preparation method of sliced cell, sliced cell and photovoltaic module |
| CN113036002A (en) * | 2021-03-04 | 2021-06-25 | 苏州联诺太阳能科技有限公司 | Solar cell preparation method |
| CN113257951A (en) * | 2021-03-30 | 2021-08-13 | 苏州联诺太阳能科技有限公司 | Preparation method of sliced battery and laser equipment |
| CN113257951B (en) * | 2021-03-30 | 2022-09-20 | 苏州联诺太阳能科技有限公司 | Preparation method of sliced battery and laser equipment |
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