CN214203710U - Basic heterojunction solar cell and preparation tool thereof - Google Patents
Basic heterojunction solar cell and preparation tool thereof Download PDFInfo
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- CN214203710U CN214203710U CN202023213243.3U CN202023213243U CN214203710U CN 214203710 U CN214203710 U CN 214203710U CN 202023213243 U CN202023213243 U CN 202023213243U CN 214203710 U CN214203710 U CN 214203710U
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- 238000002360 preparation method Methods 0.000 title abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 57
- 239000010703 silicon Substances 0.000 claims abstract description 57
- 238000002955 isolation Methods 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 5
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 3
- 239000004917 carbon fiber Substances 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a basic heterojunction solar cell and preparation instrument thereof. The basic heterojunction solar cell comprises a silicon wafer, an intrinsic amorphous silicon layer formed on the silicon wafer, a doped amorphous silicon layer formed on the intrinsic amorphous silicon layer, a transparent conductive oxide film formed on the doped amorphous silicon layer and a metal electrode formed on the transparent conductive oxide film, wherein the basic heterojunction solar cell is provided with an isolation channel, the isolation channel sequentially penetrates through the intrinsic amorphous silicon layer, the doped amorphous silicon layer and the transparent conductive oxide film from the surface of the silicon wafer, and the isolation channel is positioned at the position where the silicon wafer needs to be scribed. The utility model discloses can avoid damaging amorphous silicon layer and conductive film layer when the scribing is cut.
Description
Technical Field
The utility model belongs to crystalline silicon solar cell field relates to a basic heterojunction solar cell and preparation instrument thereof.
Background
The edge length of the solar silicon wafer is measured from 125mm, 156mm, 158.75mm, 166mm, 180mm, 182mm, and the maximum dimension is 210 mm. Along with the increase of the area of the battery and the improvement of the quality of the silicon chip, the short-circuit current of the battery is increased faster than the increase of the area. To avoid high sheet current induced P ═ I2And the power loss of/R (P is transmission loss power, I is single lead current, and R is transmission resistance), the large-size battery pieces are all designed by cutting half before the components are connected in series, and the battery pieces with larger area of 210mm are designed by cutting three times to reduce transmission current.
In the conventional single-junction PERC battery, laser cutting is used for slicing, and in order to prevent the P/N junction of the battery from being fused to conduct the positive electrode and the negative electrode, the single-junction PERC battery is generally cut from a non-P/N junction surface to a depth of 1/2-2/3 of the thickness of the battery, and then manually broken. In the process, the damage of the cutting interface is inevitably generated, and a plurality of defects are generated on the P/N junction, so that the efficiency of the battery is reduced. The heterojunction battery has the advantages that the doped layers are arranged on the two sides of the heterojunction battery, the P/N junctions are formed on the two sides, scribing inevitably damages the doped layer on one side, and scribing damages the doped layer on the other side, so that the electrical performance is reduced sharply.
SUMMERY OF THE UTILITY MODEL
To at least one among the above-mentioned technical problem, an object of the utility model is to provide a basic heterojunction solar cell for cutting formation heterojunction solar cell can avoid damaging amorphous silicon layer and conductive film layer when the scribing is cut. An object of the utility model is also to provide a preparation instrument of this basis heterojunction solar cell.
In order to achieve the above object, a first aspect of the present invention provides a basic heterojunction solar cell, including a silicon wafer, formed on an intrinsic amorphous silicon layer on the silicon wafer, formed on a doped amorphous silicon layer on the intrinsic amorphous silicon layer, formed on a transparent conductive oxide film on the doped amorphous silicon layer and formed on a metal electrode on the transparent conductive oxide film, the basic heterojunction solar cell has an isolation channel, the isolation channel is from the surface of the silicon wafer runs through in proper order the intrinsic amorphous silicon layer, the doped amorphous silicon layer and the transparent conductive oxide film, the isolation channel is located at a position where scribing needs to be performed on the silicon wafer.
Preferably, the front surface of the silicon wafer is provided with a front surface structure formed by sequentially laminating a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer and a first transparent conductive oxide film from inside to outside, and the front surface structure is provided with at least one isolation channel; the back surface of the silicon chip is provided with a back surface structure which is formed by sequentially laminating a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer and a second transparent conductive oxide film from inside to outside, and the back surface structure is provided with at least one isolation channel; the isolation trenches on the front side and the corresponding isolation trenches on the back side of the silicon wafer are aligned with each other.
More preferably, the silicon wafer is an N-type silicon wafer, the doped amorphous silicon layer of the front structure is an N-type doped amorphous silicon layer, and the doped amorphous silicon layer of the back structure is a P-type doped amorphous silicon layer.
Preferably, the width of the isolation channel is 50-200 microns.
Preferably, the isolation channel extends from a first side of the silicon wafer to a second side opposite the first side.
A second aspect of the present invention provides a tool for manufacturing a basic heterojunction solar cell as described above, including a frame and a mask for forming the isolation channel, wherein the mask spans over the frame and both ends of the mask are fixed on a pair of sides of the frame respectively.
Preferably, the material of the mask is stainless steel or carbon fiber.
Preferably, the width of the mask is 50-200 microns.
Preferably, the number of the masks is multiple, and the masks are arranged in parallel.
The utility model adopts the above scheme, compare prior art and have following advantage:
the utility model discloses a basic heterojunction solar cell is formed with the isolation channel, when the section, only need with the silicon chip of isolation channel department cut can, can not harm intrinsic amorphous silicon layer, doping amorphous silicon layer and transparent conductive oxide film, realize harmless cutting, avoid haring the heterojunction, solved the sliced power loss of large tracts of land heterojunction battery when the subassembly uses and latent reliability risk. The utility model discloses a preparation instrument is convenient for form the isolation channel in intrinsic amorphous silicon layer, doping amorphous silicon layer and the transparent conductive oxide film of basic heterojunction solar cell, has simplified the preparation of above-mentioned basic heterojunction solar cell.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a basic heterojunction solar cell according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a manufacturing tool according to an embodiment of the present invention.
Fig. 3 is a schematic representation of the use of the preparation tool.
Wherein,
1. a silicon wafer; 2. a first intrinsic amorphous silicon layer; 3. a first doped amorphous silicon layer; 4. a first transparent conductive oxide film; 5. a front metal electrode; 6. a second intrinsic amorphous silicon layer; 7. a second doped amorphous silicon layer; 8. a second transparent conductive oxide film; 9. a back metal electrode; 10. isolating the channel;
101. masking; 102. a frame; 103. a carrier is provided.
Detailed Description
The following detailed description of the preferred embodiments of the invention, taken in conjunction with the accompanying drawings, enables the advantages and features of the invention to be more readily understood by those skilled in the art. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. Furthermore, the technical features mentioned in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The embodiment provides a basic heterojunction solar cell, which comprises a silicon wafer, an intrinsic amorphous silicon layer formed on the silicon wafer, a doped amorphous silicon layer formed on the intrinsic amorphous silicon layer, a transparent conductive oxide film formed on the doped amorphous silicon layer and a metal electrode formed on the transparent conductive oxide film, wherein the basic heterojunction solar cell is provided with an isolation channel, the isolation channel sequentially penetrates through the intrinsic amorphous silicon layer, the doped amorphous silicon layer and the transparent conductive oxide film from the surface of the silicon wafer, and the isolation channel is positioned at a position where the silicon wafer needs to be scribed.
Specifically, as shown in fig. 1, the first layer of the HJT cell is a front metal electrode 5, specifically a silver electrode, from top to bottom; the second layer is a first transparent conductive oxide film 4 (TCO film for short); the third layer is a first doped amorphous silicon layer 3, specifically N-type doped amorphous silicon; the fourth layer is the first intrinsic amorphous silicon 2; the fifth layer is a silicon wafer 1, in particular an N-type crystalline silicon wafer; the sixth layer is a second intrinsic amorphous silicon layer 6; the seventh layer is a second doped amorphous silicon layer 7, specifically P-type doped amorphous silicon; the eighth layer is a second transparent conductive oxide film 8 (TCO film for short); the ninth layer is a back metal electrode 9, specifically a silver electrode.
Specifically, the front surface of the silicon wafer 1 is provided with a front surface structure which is formed by sequentially laminating a first intrinsic amorphous silicon layer 2, a first doped amorphous silicon layer 3 and a first transparent conductive oxide thin film 4 from inside to outside, and the front surface structure is provided with at least one isolation channel 10; the back surface of the silicon chip 1 is provided with a back surface structure which is formed by sequentially laminating a second intrinsic amorphous silicon layer 6, a second doped amorphous silicon layer 7 and a second transparent conductive oxide film 8 from inside to outside, and the back surface structure is provided with at least one isolation channel 10; the isolation trenches 10 on the front side and the corresponding isolation trenches 10 on the back side of the silicon wafer 1 are aligned with each other. The silicon wafer 1 is an N-type silicon wafer, the first doped amorphous silicon layer 3 of the front structure is an N-type doped amorphous silicon layer, and the second doped amorphous silicon layer 7 of the back structure is a P-type doped amorphous silicon layer.
The width of the isolation channel 10 is 50-200 microns. The isolation channel 10 extends from a first side of the silicon wafer 1 to a second side opposite to the first side, for example, a pair of long sides of the silicon wafer 1; that is, the length of the isolation channel 10 is at least greater than the width of the silicon wafer 1.
The structure of the preparation tool is specifically shown in fig. 2, the mask 101 is carried and fixed by a frame 102, and the mask 101 spans the frame 102 and is fixed at both ends on a pair of sides of the frame 102. The material of the mask 101 is stainless steel or carbon fiber. The length of the mask 101 is not less than the length of at least one of the sides of the wafer 1, for example, greater than the length of the short side of the wafer 1. The width of the mask 101 is 50-200 microns.
Referring to fig. 1 to 3, the heterojunction solar cell is prepared by the following steps: A. preparing an intrinsic amorphous silicon layer on the silicon wafer, and preparing a doped amorphous silicon layer on the intrinsic amorphous silicon layer; B. preparing a transparent conductive oxide film on the doped amorphous silicon layer; C. preparing a metal electrode on the transparent conductive oxide film to prepare a basic cell piece, and forming a basic heterojunction solar cell shown in figure 1; D. and scribing and cutting the basic cell slice to form a plurality of heterojunction solar cells. Before preparing an intrinsic amorphous silicon layer, an impurity-doped amorphous silicon layer and a transparent conductive oxide film, placing a mask on the position, needing scribing, on the surface of a silicon wafer in advance, so that an isolation channel is formed in the intrinsic amorphous silicon layer, the impurity-doped amorphous silicon layer and the transparent conductive oxide film, and the isolation channel sequentially penetrates through the intrinsic amorphous silicon layer, the impurity-doped amorphous silicon layer and the transparent conductive oxide film from the surface of the silicon wafer; and when the basic battery piece is cut, cutting the silicon chip along the isolation channel to form a plurality of scribing battery pieces.
In step a or B, the silicon wafer 1 is placed on the carrier 103, the frame 102 with the mask 101 is placed on the carrier 103, the silicon wafer 1 is positioned in the frame 102, and the mask 101 covers the silicon wafer 1. The carrier 103 is a carrier of a CVD apparatus. FIG. 3 shows a step A, in which the silicon wafer 1 is placed on a carrier 103, the frame 102 is placed so that the silicon wafer 1 is located in the frame 102, and the mask 101 on the frame 102 is covered on the position of the silicon wafer 1 to be laser-scribed; then depositing an intrinsic amorphous silicon layer on the silicon wafer 1, and doping the intrinsic amorphous silicon layer to form a doped amorphous silicon layer; after doping is finished, the mask 101 is removed, the position of the mask 101 forms an isolation channel 10, the intrinsic amorphous silicon layers on two sides of the isolation channel are isolated, and the doped amorphous silicon layers on two sides of the isolation channel are isolated. Similarly, in the step B, after the mask 101 is placed in advance, the transparent conductive oxide film is prepared, and after the mask 101 is completed, the isolation trench 10 for isolating the transparent conductive oxide films on the two sides is formed.
In step a, a first mask is placed on the surface of the silicon wafer 1 in advance before the intrinsic amorphous silicon layer and the impurity-doped amorphous silicon layer are prepared. In step B, a second mask is placed on the surface of the silicon wafer 1 in advance before the transparent conductive oxide is prepared. The first mask and the second mask cover the same region of the silicon wafer 1, and the width of the first mask and the width of the second mask are equal, except that the frame used for the first mask and the frame used for the second mask are slightly different.
The preparation of the basic heterojunction solar cell is specifically explained by taking an N-type monocrystalline silicon wafer as an example.
1. And cleaning and texturing the N-type monocrystalline silicon wafer to form a pyramid textured surface, removing impurity ions and cleaning the surface.
2. The passivation layer is formed by preparing an intrinsic amorphous silicon layer using a CVD (PECVD, HW-CVD, etc.) apparatus, and the P, N type doped amorphous silicon layer is prepared. During preparation, according to a cutting scheme, a mask 101 is placed at a corresponding position on the surface of the silicon wafer 1, the mask 101 is made of a composite material, a base is fixed on a CVD carrier 103, the width of the mask 101 is 50-200 micrometers, and after deposition, the gap width of an amorphous silicon film layer is 50-200 micrometers.
3. And depositing a TCO film on the front surface and the back surface by a magnetron sputtering (PVD) or reactive ion deposition (RPD) method to form a conductive layer. The same mask 101 is also used on the carrier plate, the width of the mask 101 is consistent with the size of the gap, and 50-200 microns are taken to form a TCO gap of 50-200 microns.
The mask 101 may be provided in plurality and arranged in parallel.
In the basic heterojunction solar cell, the mask is used in the amorphous silicon deposition and TCO deposition processes, the film layer interval of 50-200um is formed in the film layer interval, the position of the film layer interval corresponds to the scribing region of the silicon wafer, and the isolation channel is formed.
The above embodiments are only for illustrating the technical concept and features of the present invention, and are preferred embodiments, which are intended to enable persons skilled in the art to understand the contents of the present invention and to implement the present invention, and thus, the protection scope of the present invention cannot be limited thereby. All equivalent changes or modifications made according to the principles of the present invention are intended to be covered by the scope of the present invention.
Claims (9)
1. A basic heterojunction solar cell comprises a silicon wafer, an intrinsic amorphous silicon layer formed on the silicon wafer, a doped amorphous silicon layer formed on the intrinsic amorphous silicon layer, a transparent conductive oxide film formed on the doped amorphous silicon layer, and a metal electrode formed on the transparent conductive oxide film, and is characterized in that: the basic heterojunction solar cell is provided with an isolation channel, the isolation channel sequentially penetrates through the intrinsic amorphous silicon layer, the doped amorphous silicon layer and the transparent conductive oxide film from the surface of the silicon wafer, and the isolation channel is located at the position where the silicon wafer needs to be scribed.
2. The solar cell of claim 1, wherein the front surface of the silicon wafer has a front surface structure formed by sequentially stacking a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer and a first transparent conductive oxide thin film from inside to outside, the front surface structure having at least one isolation channel; the back surface of the silicon chip is provided with a back surface structure which is formed by sequentially laminating a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer and a second transparent conductive oxide film from inside to outside, and the back surface structure is provided with at least one isolation channel; the isolation trenches on the front side and the corresponding isolation trenches on the back side of the silicon wafer are aligned with each other.
3. The solar cell of claim 2, wherein the silicon wafer is an N-type silicon wafer, the doped amorphous silicon layer of the front structure is an N-type doped amorphous silicon layer, and the doped amorphous silicon layer of the back structure is a P-type doped amorphous silicon layer.
4. The basic heterojunction solar cell of claim 1, wherein the width of the isolation channel is 50-200 microns.
5. The basic heterojunction solar cell of claim 1, wherein the isolation channel extends from a first side edge of the silicon wafer to a second side edge opposite the first side edge.
6. Tool for the production of a basic heterojunction solar cell according to any of claims 1 to 5, characterized in that: the mask strides over the frame, and two end parts of the mask are respectively fixed on one pair of side edges of the frame.
7. The production tool of claim 6, wherein: the mask is made of stainless steel or carbon fiber.
8. The production tool of claim 6, wherein: the width of the mask is 50-200 microns.
9. The production tool of claim 6, wherein: the number of the masks is multiple and the masks are arranged in parallel.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202023213243.3U CN214203710U (en) | 2020-12-28 | 2020-12-28 | Basic heterojunction solar cell and preparation tool thereof |
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| CN202023213243.3U CN214203710U (en) | 2020-12-28 | 2020-12-28 | Basic heterojunction solar cell and preparation tool thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687766A (en) * | 2020-12-28 | 2021-04-20 | 苏州腾晖光伏技术有限公司 | Heterojunction solar cell, preparation method thereof and basic heterojunction solar cell |
| CN116174942A (en) * | 2023-04-26 | 2023-05-30 | 华能新能源股份有限公司 | HJT solar cell slice and preparation method thereof |
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2020
- 2020-12-28 CN CN202023213243.3U patent/CN214203710U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687766A (en) * | 2020-12-28 | 2021-04-20 | 苏州腾晖光伏技术有限公司 | Heterojunction solar cell, preparation method thereof and basic heterojunction solar cell |
| CN116174942A (en) * | 2023-04-26 | 2023-05-30 | 华能新能源股份有限公司 | HJT solar cell slice and preparation method thereof |
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