JP5528904B2 - Method for dividing sapphire wafer - Google Patents

Description

  The present invention relates to a method for dividing a sapphire wafer in which a sapphire wafer in which light emitting devices each having a reflective film are formed in a plurality of element formation regions is divided along a predetermined division line.

  As a light emitting device manufactured using a sapphire wafer, there is a light emitting diode (LED) in which a nitride semiconductor such as gallium nitride (GaN) is stacked on a sapphire substrate. Such a light emitting device is formed in each element formation region surrounded by the division lines of the sapphire wafer. Individual light emitting devices are obtained by dividing the sapphire wafer in which the light emitting devices are respectively formed in the element formation region along the predetermined division line.

  By the way, since the sapphire wafer has a high Mohs hardness, it has been relatively difficult to divide by a dicing apparatus having a cutting blade as a dividing means. Therefore, a division method using a pulse laser beam has been tried. That is, in this dividing method, a pulse laser beam having a wavelength that is transparent to sapphire is irradiated by aligning the condensing point from one side of the sapphire wafer to the inside along the line to be divided, and the inside of the wafer. The modified layer is continuously formed along the line to be divided. Then, an external force is applied to the sapphire wafer along the planned dividing line whose strength is reduced by the formation of the modified layer, thereby dividing the sapphire wafer as the workpiece (for example, Patent Document). 1).

Japanese Patent No. 3408805

  As a light-emitting device manufactured using a sapphire wafer, the other side of the sapphire substrate (sapphire wafer) (semiconductor) is used to reflect light emitted from the active layer formed by the semiconductor layer and improve the light extraction efficiency. In some cases, a reflective film is laminated on the surface opposite to the surface on which the layer is formed. When dividing such light emitting devices individually, in order not to damage the light emitting devices, a modified layer is formed inside the sapphire wafer by irradiating a laser beam from the surface side where the active layer is not formed. It will be necessary. However, since the reflective film is formed on the surface opposite to the surface on which the active layer is formed, this interferes with the irradiation of the laser beam and the modified layer cannot be appropriately formed inside the sapphire wafer. there were.

  The present invention has been made in view of the above, and an object of the present invention is to provide a dividing method capable of appropriately dividing a sapphire wafer on which a reflective film is formed.

  In order to solve the above-described problems and achieve the object, the present invention provides a reflective film that includes a plurality of light-emitting devices formed in a region partitioned by lines to be divided on the front surface and reflects light emitted from the light-emitting devices on the back surface. A method for dividing a sapphire wafer, wherein a laminated sapphire wafer is divided along the division line, and a pulse laser having a wavelength that is absorbed by the reflection film along the division line is collected from the back side of the sapphire wafer. An ablation processing step of irradiating with light to form a groove deeper than the thickness of the reflective film on the division planned line, and the division of the sapphire surface exposed by the groove after the ablation processing step A pulse laser having a wavelength that passes through sapphire along a predetermined line is focused and irradiated on the inside of the sapphire wafer, A modified layer forming step for forming a modified layer along the planned division line, and after the modified layer forming step, an external force is applied to the modified layer so that the sapphire wafer is aligned along the planned divided line. And a dividing step of dividing.

  According to the present invention, it is possible to appropriately divide the sapphire wafer on which the reflective film is formed. For this reason, the manufacturing yield of the light emitting device can be improved.

FIG. 1 is a perspective view showing a configuration example of a sapphire wafer to which a dividing method according to an embodiment of the present invention is applied. FIG. 2 is a process sectional view showing an ablation process for forming a groove in the method for dividing a sapphire wafer according to the embodiment of the present invention. FIG. 3 is a process sectional view showing a modified layer forming process in the method for dividing a sapphire wafer according to the embodiment of the present invention. FIG. 4 is a process sectional view showing a dividing step in the method for dividing a sapphire wafer according to the embodiment of the present invention. FIG. 5 is a cross-sectional view showing a state in which the light emitting device divided by the dividing method according to the embodiment of the present invention is mounted.

  Hereinafter, a method for dividing a sapphire wafer according to an embodiment of the present invention will be described with reference to the drawings. However, the drawings are schematic, and the thicknesses and ratios of the layers are different from the actual ones. Further, in the method for dividing a sapphire wafer according to this embodiment, the object to be divided is formed by forming a light emitting element as a light emitting device by forming a semiconductor layer, a reflective film, etc. on the sapphire wafer.

  Here, a sapphire wafer 1 as shown in FIGS. 1 to 3 will be described as an example of a sapphire wafer to which the dividing method according to the present embodiment is applied. As shown in FIG. 1, the sapphire wafer 1 has a light emitting element portion 100 </ b> A formed in each of the regions partitioned by a grid-like division planned line 11 on the surface 1 a. The division line 11 is a grid-like line when viewed from the front surface 1a side of the sapphire wafer 1, but when division is performed based on the division line 11, the dashed line in FIGS. It becomes a cleavage planned surface in the thickness direction of the sapphire wafer 1 or the like as shown. On the back surface of the sapphire wafer 1, a reflective film 30 that reflects light emitted from an InGaN-based active layer 24 described later is laminated.

  As shown in FIGS. 2 and 3, the light emitting element unit 100 </ b> A is formed by laminating a nitride semiconductor such as GaN or InGaN, which is a gallium nitride (GaN) compound semiconductor, on the surface (main surface) 1 a side of the sapphire wafer 1. The reflective film 30 is formed on the surface opposite to the surface 1a of the sapphire wafer 1. The reflective film 30 is formed by sequentially laminating a dielectric multilayer film (DBR: Distributed Bragg Reflector) 31, for example, a metal film 32 made of aluminum, gold, or the like, on the sapphire wafer 1. In this embodiment, the reflective film 30 is formed by laminating two layers of the reflective material film of the dielectric multilayer film 31 and the metal film 32. Any one of these is formed. A structure may be sufficient and a multilayered structure may be sufficient.

  On the surface 1a side of the sapphire wafer 1, a GaN-based buffer layer 21 is formed by epitaxial growth. Further, an n-type GaN-based high-concentration layer 22, an n-type GaN-based n-type cladding layer 23, for example, a multiple quantum well structure InGaN-based active layer 24, p-type GaN-based p-type cladding layer 25, and p-type GaN-based contact layer 26 are sequentially stacked. The n-type GaN-based high-concentration layer 22 is exposed at the bottom of the recess 28 formed by etching a part of the surface side as appropriate, and n-type GaN-based high-concentration layer 22 is exposed on the surface of the n-type GaN-based high-concentration layer 22. A side electrode 29 is formed. A p-side transparent electrode 27 is formed on the surface of the contact layer 26 made of p-type GaN.

  Hereinafter, a dividing method for dividing the sapphire wafer 1 into the light emitting elements 100 will be described. First, as shown in FIG. 2, the expansion tape 40 is attached to the entire surface of the sapphire wafer 1 on the side where the nitride semiconductor is laminated. The expansion tape 40 includes, for example, a resin tape main body 41 and an adhesive layer 42 that are deformed so as to expand when pulled. The expansion tape 40 is a sheet having a larger area than the sapphire wafer 1.

(Ablation process)
As shown in FIG. 2, the sapphire wafer 1 with the expansion tape 40 attached to the entire surface on which the nitride semiconductor is laminated is placed on the chuck table of a well-known laser processing apparatus (not shown) with the expansion tape 40 side down. Place and hold like this. The expansion tape 40 also has an action of protecting the element forming portion of the sapphire wafer 1.

  Then, as shown in FIG. 2, the surface of the sapphire wafer 1 on which the reflection film 30 is formed is condensed and irradiated with a pulse laser L1 having a wavelength that is absorbed by the reflection film 30 along the division line 11. The groove 33 deeper than the thickness of the reflective film 30 is formed on the planned division line 11.

  Incidentally, in the ablation processing using a pulse laser, the following removal conditions were applied to the reflective film 30.

○ Removal conditions for the reflective film 30 Laser wavelength: 355 nm
Frequency: 100kHz
Output: 0.5W
Processing feed rate: 300 mm / sec Surface spot size: 40 μm

  Such ablation processing has the advantage that there is almost no thermal damage around the laser irradiation portion and the cross section of the processing portion becomes sharp. Such ablation processing is performed along all the division lines 11.

(Modified layer formation process)
Next, as shown in FIG. 3, after the above-described ablation process, a pulse laser L2 having a wavelength that transmits the sapphire along the division line 11 in the region where the sapphire (wafer) surface is exposed in the groove 33. Is condensed and irradiated to the inside of the sapphire wafer 1, and the modified layer 34 is continuously formed in each line along all the scheduled division lines 11 inside the sapphire wafer 1.

  Here, the modified layer 34 refers to a region in the sapphire wafer in which the density, refractive index, mechanical strength, and other physical characteristics are different from the surroundings. More specifically, examples of the modified layer 34 include a melt treatment region, a crack generation region, a dielectric breakdown region, a refractive index change region, and the like, and a region where these are mixed.

Incidentally, the conditions of the pulse laser L2 used in this modified layer forming step are as shown below.
○ Modified layer formation conditions Laser wavelength: 1045 nm
Frequency: 100kHz
Output: 0.3W
Processing feed rate: 400mm / sec

(Division process)
As shown in FIG. 4, after the above modified layer forming step, the expansion tape 40 is forcibly stretched in the plane expansion direction indicated by the arrow P in FIG. The sapphire wafer 1 containing can be divided along the division line 11 on which the modified layer 34 is formed. As shown in FIGS. 4 and 5, the sapphire wafer 1 is divided into sapphire substrates 1 </ b> A of the respective light emitting elements 100.

  4 and 5, the cleaved side wall of the sapphire substrate 1 </ b> A in the light emitting element 100 shows the groove 33 and the modified layer 34 for convenience of explanation, but the groove 33 and the modified layer 34 are Actually, since the width is very small, it hardly appears as a processing mark on the cleaved side wall, and the performance of the light emitting element 100 is not deteriorated.

  As shown in FIG. 5, the light emitting device 100 divided in this embodiment can be mounted with the reflective film 30 side adhered to the mounting substrate 50, and the light generated in the InGaN-based active layer 24 is forward. And it is irradiated toward the back. Here, the light Lf irradiated forward is transmitted through the p-side transparent electrode 27 and emitted forward, and the light Lb irradiated backward is reflected by the reflective film 30 and passes through the p-side transparent electrode 27. The light passes through and is emitted forward.

  In the method for dividing a sapphire wafer according to this embodiment, the reflective film 30 is removed by laser processing according to the removal conditions of the reflective film 30 different from the modified layer forming conditions for forming the modified layer inside the sapphire wafer 1, The region where the sapphire (wafer) surface is exposed in the groove 33 is focused and irradiated on the inside of the sapphire wafer 1 with a pulsed laser L2 having a wavelength that transmits the sapphire along the planned dividing line 11. Can be formed. Therefore, it is possible to appropriately divide the sapphire wafer 1 on which the reflective film 30 is formed. Thereby, the sapphire wafer 1 in which the light emitting element portion 100 </ b> A is built can be surely divided into the individual light emitting elements 100, and the yield in manufacturing the light emitting elements 100 can be improved.

(Other embodiments)
The embodiment of the present invention has been described above. However, the description and the drawings, which constitute a part of the disclosure of the above embodiment, do not limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  For example, in the above embodiment, a nitride semiconductor such as GaN or InGaN, which is a gallium nitride (GaN) compound semiconductor, is laminated on the surface 1a of the sapphire wafer 1, and the surface opposite to the surface 1a of the sapphire wafer 1 Although the present invention is applied to the light emitting element having the configuration in which the reflective film 30 is formed on the sapphire wafer 1, various materials and various structures are used for the sapphire wafer 1, such as a light emitting diode and a laser diode. It is applicable to various light emitting devices.

  In the above embodiment, the sapphire wafer 1 is split by forcibly extending the expansion tape 40 in the splitting process, but a load is applied to the sapphire wafer 1 using a roller. May be divided.

  Furthermore, in the above-described embodiment, the modified layer 34 is formed so as to be continuous along each of the planned dividing lines 11. However, the modified layer 34 is intermittently modified within a range where linear division is possible. A quality layer 34 may be formed.

  As described above, the method for dividing a sapphire wafer according to the present invention is useful for manufacturing a light emitting device, and in particular, can be used in a manufacturing technology for a light emitting device such as a light emitting diode or a laser diode.

DESCRIPTION OF SYMBOLS 1 Sapphire wafer 100 Light emitting element 100A Light emitting element part 11 Divided line 1A Sapphire substrate 1a Surface 24 InGaN type active layer 27 P side transparent electrode 29 N side electrode 30 Reflective film 31 Dielectric multilayer film 32 Metal film 33 Groove 34 Modified layer 40 Expansion tape

Claims (1)

A sapphire wafer in which a plurality of optical devices are formed in a region partitioned by a division line on the front surface, and a sapphire wafer in which a reflective film that reflects light emitted from the light emitting device is laminated on the back surface is divided along the division line. A division method,
A pulse laser having a wavelength that is absorbed by the reflective film is condensed and irradiated along the planned division line from the back side of the sapphire wafer to form a groove deeper than the thickness of the reflective film on the planned division line. An ablation process,
After the ablation processing step, a pulse laser having a wavelength that passes through the sapphire along the planned dividing line where the sapphire surface is exposed by the groove is condensed and irradiated on the inside of the sapphire wafer. A modified layer forming step for forming a modified layer along the planned dividing line inside;
A dividing step of dividing the sapphire wafer along the planned dividing line by applying an external force to the modified layer after the modified layer forming step;
A method for dividing a sapphire wafer, comprising:

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