TWI632703B - 封裝膜 - Google Patents
封裝膜 Download PDFInfo
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- TWI632703B TWI632703B TW106112261A TW106112261A TWI632703B TW I632703 B TWI632703 B TW I632703B TW 106112261 A TW106112261 A TW 106112261A TW 106112261 A TW106112261 A TW 106112261A TW I632703 B TWI632703 B TW I632703B
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- Prior art keywords
- layer
- packaging
- film
- metal
- organic electronic
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- 238000005538 encapsulation Methods 0.000 title claims description 86
- 229920006280 packaging film Polymers 0.000 claims abstract description 55
- 239000012785 packaging film Substances 0.000 claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 284
- 229920005989 resin Polymers 0.000 claims description 101
- 239000011347 resin Substances 0.000 claims description 101
- 229910052751 metal Inorganic materials 0.000 claims description 78
- 239000002184 metal Substances 0.000 claims description 77
- 238000004806 packaging method and process Methods 0.000 claims description 45
- 239000000203 mixture Substances 0.000 claims description 34
- 238000005520 cutting process Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 19
- 230000009477 glass transition Effects 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 239000013307 optical fiber Substances 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002250 absorbent Substances 0.000 claims description 3
- 230000002745 absorbent Effects 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 239000000806 elastomer Substances 0.000 description 61
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- 238000001723 curing Methods 0.000 description 36
- -1 polyoxymethylene Polymers 0.000 description 32
- 239000003230 hygroscopic agent Substances 0.000 description 27
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 22
- 239000010408 film Substances 0.000 description 22
- 230000001070 adhesive effect Effects 0.000 description 21
- 239000000853 adhesive Substances 0.000 description 20
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- 125000000524 functional group Chemical group 0.000 description 18
- 239000003795 chemical substances by application Substances 0.000 description 17
- 239000003999 initiator Substances 0.000 description 17
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 15
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 15
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 15
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 14
- 229920000642 polymer Polymers 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 239000000178 monomer Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 description 8
- 239000005020 polyethylene terephthalate Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 7
- 239000003760 tallow Substances 0.000 description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
- 239000003431 cross linking reagent Substances 0.000 description 5
- 125000003700 epoxy group Chemical group 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 229920002367 Polyisobutene Polymers 0.000 description 4
- 229920000800 acrylic rubber Polymers 0.000 description 4
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 4
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 238000012663 cationic photopolymerization Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000010459 dolomite Substances 0.000 description 4
- 229910000514 dolomite Inorganic materials 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000003208 petroleum Substances 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
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- 125000001453 quaternary ammonium group Chemical group 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
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- 125000004122 cyclic group Chemical group 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 239000012948 isocyanate Substances 0.000 description 3
- 150000002513 isocyanates Chemical class 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000004843 novolac epoxy resin Substances 0.000 description 3
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 3
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- 239000000377 silicon dioxide Substances 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- AOGNACZDZNOTSN-UHFFFAOYSA-N 2,3-dihydroxy-1,2-diphenylpropan-1-one Chemical compound C=1C=CC=CC=1C(O)(CO)C(=O)C1=CC=CC=C1 AOGNACZDZNOTSN-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
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- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 239000004971 Cross linker Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical compound CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 2
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- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
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- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 2
- 229920002877 acrylic styrene acrylonitrile Polymers 0.000 description 2
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 2
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- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 2
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- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
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- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
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- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
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- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
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- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
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- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
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- RLUFBDIRFJGKLY-UHFFFAOYSA-N (2,3-dichlorophenyl)-phenylmethanone Chemical compound ClC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1Cl RLUFBDIRFJGKLY-UHFFFAOYSA-N 0.000 description 1
- XKSUVRWJZCEYQQ-UHFFFAOYSA-N 1,1-dimethoxyethylbenzene Chemical compound COC(C)(OC)C1=CC=CC=C1 XKSUVRWJZCEYQQ-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- SCMVPOVMOHQFKU-UHFFFAOYSA-N 1-(aziridin-1-yl)prop-2-en-1-one Chemical compound C=CC(=O)N1CC1 SCMVPOVMOHQFKU-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- STFXXRRQKFUYEU-UHFFFAOYSA-N 16-methylheptadecyl prop-2-enoate Chemical compound CC(C)CCCCCCCCCCCCCCCOC(=O)C=C STFXXRRQKFUYEU-UHFFFAOYSA-N 0.000 description 1
- GIMQKKFOOYOQGB-UHFFFAOYSA-N 2,2-diethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)(OCC)C(=O)C1=CC=CC=C1 GIMQKKFOOYOQGB-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- HNRMPXKDFBEGFZ-UHFFFAOYSA-N 2,2-dimethylbutane Chemical class CCC(C)(C)C HNRMPXKDFBEGFZ-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
本案係關於封裝膜、製造彼之方法、包含彼之有機電子裝置、及使用彼製造有機電子裝置之方法。本案提供一種封裝膜,其可形成為具有可有效阻擋自外部流入有機電子裝置之濕氣或氧的結構、具有優異處理性質及加工性、以及具有與有機電子元件之優異的結合性質及耐久性。
Description
本案係關於封裝膜、製造彼之方法、包含彼之有機電子裝置、及使用彼製造有機電子裝置之方法。
有機電子裝置(OED)係指包含其中利用電洞及電子而發生電荷交換之有機材料層的裝置,其實例可為光伏打裝置、整流器、發射機、有機發光二極體(OLED)等。
在有機電子裝置當中,相較於傳統光源,有機發光二極體(OLED)耗較少功率、具有高反應速度、及有利於最小化顯示裝置之厚度或輕量。此外,OLED具有優異空間利用性,因而預期可應用於各種領域,包含所有類型之可攜式裝置、監視器、筆記型電腦及電視機。
在OLED之商業化及擴展用途時,最主要的問題為耐久性(durability)。包含於OLED中之有機材料、金屬電極等非常容易因外部因素(諸如濕氣等)而氧化。因
此,包含OLED之產品對環境因素非常敏感。為了解決上述問題,封裝材料係應用至有機電子裝置,但薄封裝材料之自動化分布製程困難,且在基板(諸如金屬層)與封裝層之附著製程中因逐漸縮短的邊框(bezel)而導致故障(諸如對準誤差(alignment error)等)的可能性高。因此,該技術已進展為藉由捲對捲(roll-to-roll)法將封裝層與基板事先附著,然後裁切以適用板(panel)的方式。此種製程可解決在封裝層與基板之附著製程中會發生的問題,但封裝層和基板之大小幾乎相同,使得有機電子裝置及面板會因在結合(bonding)及熱固化製程中之封裝層溢流而受到污染。因此,需要解決上述問題之方法。
本案提供封裝膜,其可形成為具有可有效阻擋自外部流入有機電子裝置之濕氣或氧的結構、具有優異處理性質及加工性、以及具有優異的與有機電子元件之結合性質(bonding property)及耐久性。
本案係關於封裝膜。封裝膜可應用於封裝(encapsulate)或包封(capsulate)有機電子裝置,例如OLED等。在本說明書中,封裝膜可表示為封裝材料或密封材料。
本文所使用之用語「有機電子裝置(OED)」係指具有包含在一對相對電極之間的有機材料層(其中利用電洞及電子發生電荷交換)的結構之物品或裝置。其實例
可包含光伏打裝置(photovoltaic device)、整流器、發射機(transmitter)、有機發光二極體(OLED)等,但本案不限於此。在本發明之一實例中,有機電子裝置可為OLED。
例示的封裝膜,如圖1所示,可包含金屬層(11),其具有第一表面(111)及相對於第一表面(111)之第二表面(112);以及封裝層(12),其設置在金屬層(11)之第一表面(111)上。此處,封裝層(12)可設置在第一表面(111)上且位於第一表面(111)的邊緣以內,使得在其一些區域的邊緣與第一表面(111)的邊緣之間形成具有大小為20μm至1,000μm、23μm至980μm或24μm至950μm之缺口(a)。缺口(a)可存在於封裝層(12)之至少一些邊緣,但本發明不限於此,以及缺口(a)可存在於所有邊緣。如圖1所示,用語「缺口(gap)」係指層壓之封裝層(12)與金屬層(11)的側端之間的間隔。
此外,封裝層在其一些區域的邊緣可包含傾斜部分(inclined part)(d)。封裝層(12)可包含第一表面及相對於該第一表面之第二表面(就像金屬層一樣)。此處,封裝層(12)之第二表面可面對金屬層(11)之第一表面(111),且封裝層(12)之第二表面可與金屬層(11)之第一表面(111)接觸,如圖1所示。傾斜部分(d)之寬度可指在封裝層(12)之第二表面的側端之法線與封裝層(12)之第一表面的側端之法線之間的距離(d),且可在2μm至1,000μm、3μm至930μm或4μm至880μm之範圍。此處,法線(normal)可為相對於封裝層之第一表面及/或第二表面的法線。在本說
明書中,當封裝層(12)具有傾斜部分(d)時,下文所述之固化部分(c)的寬度可從封裝層之第二表面的側端測量,如圖1所示。此外,在本說明書中,當封裝層(12)具有傾斜部分(d)時,缺口(a)之大小可從封裝層之第一表面或第二表面的側端測量。圖1圖示其中缺口(a)之大小係從封裝層之第一表面的側端測量之實例。此處,封裝層(12)之第二表面的側端可比封裝層(12)之第一表面的側端更接近金屬層(11)之邊緣。本案藉由反映流動性(flowability)差異(取決於封裝層之傾斜部分)而提供具有高可靠度(reliability)之封裝膜。
本案藉由將具有傾斜部分之封裝層的缺口的大小調整於上述範圍內以提供具有優異的板(panel)間結合性質以及耐久性、且儘管在結合及固化製程中之高溫下封裝層流動但並無封裝層溢流(overflow)的封裝膜。在形成傾斜部分及缺口時,其大小可考量與金屬層接觸之封裝層的流性(fluidity),特別是依據與該金屬層整體提供之本案的封裝膜之特性,而調整。此外,在形成傾斜部分及缺口時,其大小可視封裝層之組成、封裝層或下文所述之對其施加封裝層的物體(例如,其上形成有機電子元件之基板)之性質而調整,但本發明不限於此。
在一實例中,缺口(a)之大小和傾斜部分(d)之大小的總和(a+d)可在20至2,000μm、40μm至1,800μm或50μm至1,700μm之範圍。本案藉由將大小(a+d)調整於上述範圍內以藉由反映封裝層的流動性差異(視傾斜部分之
存在而定)而提供在結合及固化製程中具有優異結合性質以及可靠度的封裝膜。
此外,根據本案之封裝膜可滿足下列一般方程式1。
在一般方程式1中,「a」為缺口大小,以及「b」為封裝層之厚度。「a/b」可為0.95至25、1至22或1至20。本案藉由將缺口與封裝層厚度之比調整於上述範圍內以藉由反映流動性差異(視封裝層之厚度而定)而提供具有高可靠度之封裝膜。
在一實例中,金屬層及/或封裝層可具有多邊形或圓形。在根據本案之具有多邊形或圓形的封裝膜中,金屬層之側端位置與封裝層之側端位置可為相同,但本發明不限於此,以及上述預定缺口(a)可形成於封裝膜的至少一些區域之邊緣。在其他實例中,封裝膜可在所有邊緣具有缺口(a)。本文所使用之用語「相同」或「一致」係指實質上相同或實質上一致,其中,誤差可為±5μm或±1μm。
此外,在本案一具體實例中,封裝層可具有2.0×10Pa.s至108Pa.s、5.0×10Pa.s至107Pa.s、102Pa.s至106Pa.s或102Pa.s至5×105Pa.s之孟納黏度(Mooney viscosity)(η*),其係在5%之應變(strain)、1Hz之頻率以及100℃之溫度的條件下根據剪應力(shear stress)測量。因
此,本案可提供具有高可靠度之膜,其中在結合及固化製程中之封裝層的流動係藉由將黏度調整於上述範圍內予以控制,因而藉由將缺口(a)調整於上述範圍內而使對準誤差(alignment error)最小化。
在本案一具體實例中,封裝層(12)可具有在其一些區域的邊緣之固化部分(cured part)。在本案中,封裝層可在其至少一些區域的側邊具有固化部分以控制在將膜用於有機電子元件之封裝時因熱所造成的封裝層流動。此處,固化部分(c)之寬度可為10μm至1,100μm、16μm至920μm、23μm至820μm、或38μm至770μm。此外,固化部分可具有10%至100%、20%至85%、25%至65%、或33%至48%之固化程度。寬度範圍或固化程度可為使寬度最小化的範圍,於此在結合時之封裝層的流動相關於上述之缺口。固化程度可藉由本領域已知的方法測量。例如,固化程度可使用ATR FT-IR測量。固化程度可使用ATR FT-IR測量為待測量固化程度之樣本的可固化官能基峰值(curable functional group peak)(P2)相對於未固化樣本之可固化官能基峰值(P1)的變化量(P1-P2)之百分比。即,固化程度可以(P1-P2)/P1×100來計算。此處,可固化官能基可為例如環氧基(epoxy group)。當可固化官能基為環氧基時,固化速率可藉由使用拉曼顯微鏡(Raman microscope)來分析從封裝層的最外周圍朝內間隔10μm處之在908cm-1的環氧基峰值(epoxy peak)之高度導出。即,在一實例中,可測量可固化官能基峰值之強度或可分析並計算其面
積以測量固化程度(degree of cure)。
在一實例中,如圖1所示,根據本案之封裝膜在金屬層(11)的第二表面(112)之一些區域的邊緣可具有大小為50μm或更小、40μm或更小、30μm或更小或10μm或更小之突出(e)。此處,其下限無特別限制,以及其大小可較佳為0μm或0.1μm。突出(e)之大小可以如圖1所示於相對於金屬層(11)的第二表面(112)之法線方向測量。通常,當裁切封裝膜時,在金屬層上會產生毛邊(burr),該毛邊會呈諸如突出之形式。因此,本案可提供具有高可靠度之封裝膜,其可藉由將金屬層(11)之突出(e)的大小調整於上述範圍內而防止製程中因突出(e)所造成的諸如凹陷(denting)、壓迫(pressing)等問題。
此外,在一實例中,根據本案之封裝膜中的封裝層之側表面可為採用具有大小為30μm至1,000μm、50μm至900μm、60μm至800μm、70μm至500μm、80μm至300μm、100μm至280μm、或110μm至260μm之雷射束裁切的表面。即,封裝層係藉由雷射束裁切,以及雷射束之強度可在30μm至1,000μm之範圍。此外,雷射可為CO2雷射或光纖雷射(optical fiber laser),但本發明不限於此。另外,缺口之所希望大小可藉由進行一或多次的封裝層之雷射裁切而予以調整。
在本案一具體實例中,封裝膜之金屬層可為透明或不透明的。金屬層可由薄膜中之金屬箔形成,或藉由將金屬沉積於聚合物基板層而形成。金屬層無限制,只
要材料具有濕氣阻隔性質以及包含金屬即可。金屬層可包含金屬、金屬氧化物、金屬氮化物、金屬碳化物、金屬氮氧化物(metal oxynitride)、金屬硼氧化物(metal oxyboride)、及其混合物中之任一者。例如,金屬層可包含其中一或多種金屬元素或非金屬元素係添加至一種金屬之合金,例如鐵-鎳合金或不鏽鋼(SUS)。此外,在一實例中,金屬層可包含銅、鋁、鎳、氧化矽、氧化鋁、氧化鈦、氧化銦、氧化錫、銦錫氧化物(indium tin oxide)、氧化鉭、氧化鋯、氧化鈮、及其混合物。金屬層可藉由電解、輥壓(rolling)、蒸鍍(evaporation)、電子束蒸鍍(electron beam evaporation)、濺鍍(sputtering)、反應性濺鍍(reactive sputtering)、化學氣相沉積、電漿化學氣相沉積(plasma chemical vapor deposition)、或電子迴旋加速共振源電漿化學氣相沉積(electron cyclotron resonance source plasma chemical vapor deposition)來沉積。在本發明一實施態樣中,金屬層可藉由反應性濺鍍來沉積。
較佳的,金屬層可具有熱傳導率(thermal conductivity)為50W/mK或更高、60W/mK或更高、70W/mK或更高、80W/mK或更高、90W/mK或更高、100W/mK或更高、110W/mK或更高、120W/mK或更高、130W/mK或更高、140W/mK或更高、150W/mK或更高、200W/mK或更高、或250W/mK或更高。當金屬層具有此種高熱傳導率時,於金屬層之結合製程時在結合界面產生的熱可更迅速放出。此外,高熱傳導率有助於將在有機電子裝
置操作期間累積的熱迅速放出至外部,因而有機電子裝置本身的溫度可保持在較低溫度,以及減少龜裂及瑕疵發生。
本文所使用之用語「熱傳導率」係指材料傳導熱的能力,且可以單位W/mK表示。該單位表示在相同溫度及距離下之材料的熱傳導程度,以及係意指熱之單位(瓦(watt))相對於距離之單位(公尺(meter))與溫度之單位(克氏溫度(kelvin))。
在本案一具體實例中,封裝層可包含壓敏性黏著劑組成物或黏著劑組成物以形成壓敏性黏著層或黏著層。封裝層可為單層或是二或更多之多層。當二或更多層構成封裝層時,封裝層之各層的組成可為相同或不同,且可包含下文所述之第一層及/或第二層。
在一實例中,封裝層可包含封裝樹脂(encapsulating resin)。在本案一具體實例中,構成封裝層之第一層的封裝樹脂可為具有玻璃轉化溫度為85℃或更高、90℃或更高、95℃或更高、或100℃或更高之樹脂。此外,構成封裝層之第二層的封裝樹脂可為具有玻璃轉化溫度為0℃或更低,例如-10℃或更低、-20℃或更低、-30℃或更低、或-40℃或更低之樹脂。除非另外指明,否則如本文所使用之玻璃轉化溫度(glass transition temperature)係指在約100℃之溫度固化約120分鐘之後的玻璃轉化溫度;以約1J/cm2或更高之照射量(irradiation amount)照射紫外線(UV)之後的玻璃轉化溫度;或在照射
UV線然後進一步進行熱固化之後的玻璃轉化溫度。
在本案一具體實例中,封裝層可由存在於單層之第一層或第二層構成,第一層可由二或更多層構成,或第二層可由二或更多層構成。再者,封裝層之雙層結構可用第一層及第二層形成。
在一實例中,封裝樹脂可為苯乙烯系樹脂或彈性體、聚烯烴(polyolefin)系樹脂或彈性體、其他彈性體(elastomer)、聚氧化烯(polyoxyalkylene)系樹脂或彈性體、聚酯系樹脂或彈性體、聚氯乙烯系樹脂或彈性體、聚碳酸酯系樹脂或彈性體、聚苯硫(polyphenylene sulfide)系樹脂或彈性體、烴類(hydrocarbon)之混合物、聚醯胺系樹脂或彈性體、丙烯酸酯系樹脂或彈性體、環氧系樹脂或彈性體、聚矽氧系樹脂或彈性體、氟系樹脂或彈性體、其混合物等。
苯乙烯系樹脂或彈性體可為例如苯乙烯-乙烯-丁二烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、丙烯腈-丁二烯-苯乙烯嵌段共聚物(ABS)、丙烯腈-苯乙烯-丙烯酸酯嵌段共聚物(ASA)、苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯系同元聚合物或其混合物。聚烯烴系樹脂或彈性體可為例如高密度聚乙烯系樹脂或彈性體、低密度聚乙烯系樹脂或彈性體、聚丙烯系樹脂或彈性體或其混合物。彈性體可為例如熱塑性酯系彈性體、烯烴系彈性體、聚矽氧系彈性體、丙烯酸系彈性體(acrylic elastomer)、或其混合物等。其中,作為熱
塑性烯烴系彈性體(thermoplastic olefin-based elastomer),可使用聚丁二烯樹脂或彈性體、或聚異丁烯樹脂或彈性體等。聚氧化烯樹脂或彈性體可為例如聚甲醛(polyoxymethylene)系樹脂或彈性體、聚氧乙烯系樹脂或彈性體、或其混合物等。聚酯系樹脂或彈性體可為例如聚對酞酸乙二酯系樹脂或彈性體、聚對酞酸丁二酯(polybutylene terephthalate)系樹脂或彈性體、或其混合物等。聚氯乙烯系樹脂或彈性體可為例如聚偏二氟乙烯等。烴類之混合物可為例如三十六烷(hexatriacotane)、或石蠟(paraffin)等。聚醯胺系樹脂或彈性體可為例如耐綸(nylon)等。丙烯酸酯系樹脂或彈性體可為例如聚(甲基)丙烯酸丁酯等。環氧系(epoxy-based)樹脂或彈性體可為例如雙酚型諸如雙酚A、雙酚F、雙酚S、其氫化產物等;酚醛清漆類(novolac type)諸如酚清漆(phenol novolac)、甲酚清漆(cresol novolac)等;含氮環狀化合物諸如三環氧丙基三聚異氰酸酯(triglycidyl isocyanurate)、乙內醯脲(hydantoin)等;脂環類(alicyclic type);脂族類(aliphatic type);芳族類諸如萘、聯苯等;環氧丙基類(glycidyl type),諸如環氧丙基醚(glycidyl ether)、環氧丙基胺(glycidyl amine)、環氧丙基醚等;二環類諸如二環戊二烯(dicyclopentadiene)等;酯;醚酯(ether ester);或其混合物。聚矽氧系樹脂或彈性體可為例如聚二甲基矽氧烷(polydimethylsiloxane)等。此外,氟系樹脂或彈性體可為例如聚三氟乙烯(polytrifluoroethylene)樹脂或彈性體、聚
四氟乙烯(polytetrafluoroethylene)樹脂或彈性體、聚氯三氟乙烯(polychlorotrifluoroethylene)樹脂或彈性體、聚六氟丙烯(polyhexafluoropropylene)樹脂或彈性體、聚偏二氟乙烯、聚氟乙烯(polyvinyl fluoride)、聚氟乙烯丙烯(polyethylene propylene fluoride)、或其混合物等。
當使用所列之樹脂或彈性體時,彼等可經例如順丁烯二酸酐等接枝、可與其他所列樹脂或彈性體或用於製備樹脂或彈性體之單體共聚合、或可以其他化合物變性(denaturalize)。其他化合物之實例可包括羧基封端之丁二烯-丙烯腈共聚物(carboxyl-terminated butadiene-acrylonitrile copolymer)等。
在一實例中,在作為封裝樹脂之上述類型當中,封裝層可包含烯烴系彈性體、聚矽氧系彈性體、或丙烯酸系彈性體等,但本案不限於此。
在本案一具體實例中,封裝樹脂可為烯烴系樹脂(olefin-based resin)。在一實例中,封裝樹脂可包含由丁烯衍生之聚合物。由丁烯衍生之聚合物可意指聚合物之聚合單元中的至少一者係衍生自丁烯。由於衍生自丁烯之聚合物具有非常低的極性、為透明的、以及幾乎不受腐蝕影響,因此當該聚合物用作封裝材料或密封材料時,可實現優異的濕氣阻隔性質及耐久性。
在本案中,由丁烯衍生之聚合物亦可為藉由將丁烯單體聚合所獲得之同元聚合物;藉由將丁烯單體及其他可聚合單體共聚合所獲得之共聚物;藉由使用丁烯單
體所獲得之反應性寡聚物(reactive oligomer);或其混合物。本案中之衍生的聚合物可意指由單體聚合之單元所形成的聚合物。丁烯單體可為例如1-丁烯、2-丁烯或異丁烯。
可與衍生物聚合之丁烯單體或其他單體可為例如異戊二烯、苯乙烯、或丁二烯等。當使用共聚物時,可維持諸如加工性及交聯程度等性質,因而應用於有機電子裝置時可確保壓敏性黏著劑之固有耐熱性。
此外,藉由使用丁烯單體所獲得之反應性寡聚物可包含具有反應性官能基之丁烯聚合物。寡聚物可具有重量平均分子量為500至5,000。此外,丁烯聚合物可與具有反應性官能基之其他聚合物結合。其他聚合物可為(甲基)丙烯酸烷酯,但本發明不限於此。反應性官能基可為羥基、羧基、異氰酸基(isocyanate group)或含氮基團。又,反應性寡聚物及其他聚合物可藉由多官能交聯劑交聯,且多官能交聯劑(multifunctional crosslinking agent)可為選自由下列所組成之群組的一或多者:異氰酸酯(isocyanate)交聯劑、環氧(epoxy)交聯劑、吖(aziridine)交聯劑及金屬螯合物(metal chelate)交聯劑。
在封裝層中,樹脂或彈性體組分可具有能使黏著劑組成物形成膜形狀之重量平均分子量(Mw)。例如,樹脂或彈性體可具有重量平均分子量為約100,000至2,000,000、110,000至1,500,000或150,000至1,000,000。本文所使用之用語「重量平均分子量」係指經由凝膠滲透層
析術(GPC)所測量相對於標準聚苯乙烯的轉換值。然而,樹脂或彈性體組分並非必需要具有上述重量平均分子量。例如,當樹脂或彈性體組分之重量平均分子量未達足以形成膜的水平時,可將另外的黏合劑樹脂混入黏著劑組成物。
在其他具體實例中,根據本案之封裝樹脂可為可固化樹脂。可用於本案之可固化樹脂的具體類型無特別限制,及例如可使用本領域已知的各種熱可固化或光可固化樹脂。用語「熱可固化樹脂(heat-curable resin)」係指可經由適當的熱施加或老化(aging)製程而固化的樹脂。用語「光可固化樹脂(photocurable resin)」係指可藉由電磁波照射而固化的樹脂。再者,可固化樹脂可為兼具熱固化與光固化性質之雙重可固化樹脂(dual-curable resin)。
在本案中,可固化樹脂之具體類型無特別限制,只要是具有上述性質之樹脂即可。例如,可固化樹脂可為可經固化以展現黏著性質的樹脂,其包含一或多個可被固化之官能基諸如環氧丙基(glycidyl group)、異氰酸基(isocyanate group)、羥基(hydroxyl group)、羧基(carboxyl group)、或醯胺基(amide group)等,或一或多個可藉由電磁波照射而固化的官能基諸如環氧基(epoxide group)、環醚基(cyclic ether group)、硫基(sulfide group)、縮醛基(acetal group)、或內酯基(lactone group)等。再者,如上述之樹脂的具體類型可包括丙烯酸系樹脂、聚酯樹脂、異氰酸酯樹脂、或環氧樹脂等,但本發明不限於此。
在本案中,芳族或脂族、或直鏈或支鏈環氧樹脂可用作可固化樹脂。在本案一實施態樣中,可使用含有二或更多個官能基且具有環氧當量(epoxy equivalent weight)為180至1,000g/eq之環氧樹脂。使用具有在上述範圍內之環氧當量的環氧樹脂時,可能有效維持固化產物之諸如黏著性能、玻璃轉化溫度等性質。環氧樹脂的實例可包括下列中的一者或二或更多者之混合物:甲酚清漆環氧樹脂(cresol novolac epoxy resin)、雙酚A型環氧樹脂、雙酚A型清漆環氧樹脂、酚清漆環氧樹脂(phenol novolac epoxy resin)、四官能環氧樹脂(tetrafunctional epoxy resin)、聯苯型環氧樹脂(biphenyl-type epoxy resin)、三酚甲烷型環氧樹脂(triphenol methane-type epoxy resin)、經烷基改質之三酚甲烷環氧樹脂(alkyl-modified triphenol methane epoxy resin)、萘型環氧樹脂(naphthalene-type epoxy resin)、二環戊二烯型環氧樹脂(dicyclopentadiene-type epoxy resin)及經二環戊二烯改質之酚型環氧樹脂(dicyclopentadiene-modified phenol-type epoxy resin)。
在本案中,分子結構中具有環狀結構之環氧樹脂可用作可固化樹脂,以及可使用包含芳族基(例如,苯基)之環氧樹脂。當環氧樹脂包含芳族基時,固化產物具有優異熱安定性及化學安定性,展現低WVTR,因而有機電子裝置中之封裝結構的可靠度可獲得改善。可用於本案的含芳族基之環氧樹脂的具體實例可包括下列中的一者或二或更多者之混合物:聯苯型環氧樹脂、二環戊二烯型
環氧樹脂、萘型環氧樹脂、經二環戊二烯改質之酚型環氧樹脂、甲酚系環氧樹脂、雙酚系環氧樹脂、xylok系環氧樹脂、多官能環氧樹脂、酚清漆環氧樹脂、三酚甲烷型環氧樹脂及經烷基改質之三酚甲烷環氧樹脂,但本發明不限於此。
此外,根據本案之封裝層可具有與封裝樹脂之高相容性,以及可包含能與封裝樹脂形成特定交聯結構的活性能射線可聚合化合物(active energy ray-polymerizable compound)。
例如,根據本案之封裝層可包含能藉由照射活性能射線而與封裝樹脂聚合的多官能性活性能射線可聚合化合物(multifunctional active energy ray-polymerizable compound)。活性能射線可聚合化合物可指,例如,包含二或更多個可藉由照射活性能射線而參與聚合反應的官能基之化合物,官能基係例如具有乙烯系不飽和雙鍵(ethylenically unsaturated double bond)之官能基諸如丙烯醯基(acryloyl group)、或甲基丙烯醯基(methacryloyl group)等,以及諸如環氧基、或氧呾基(oxetane group)等之官能基。
作為多官能性活性能射線可聚合化合物,例如,可使用多官能丙烯酸酯(MFA)。
此外,活性能射線可聚合化合物之含量,相對於100重量份之封裝樹脂,可為5至30重量份、5至25重量份、8至20重量份、10至18重量份或12至18重量份。本
案提供即使在上述範圍內之高溫及高濕度亦具有優異可靠度的膜。
可藉由照射活性能射線而聚合的多官能性活性能射線可聚合化合物可為例如1,4-丁二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,8-辛二醇二(甲基)丙烯酸酯、1,12-十二烷二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二(甲基)丙烯酸二環戊烷酯(dicyclopentanyl di(meth)acrylate)、環己烷-1,4-二甲醇二(甲基)丙烯酸酯(cyclohexane-1,4-dimethanol di(meth)acrylate)、三環癸烷二甲醇二(甲基)丙烯酸酯(tricyclodecane dimethanol di(meth)acrylate)、二羥甲基二環戊烷二(甲基)丙烯酸酯(dimethylol dicyclopentane di(meth)acrylate)、新戊二醇改質之二(甲基)丙烯酸三甲基丙烷酯(neopentyl glycol-modified trimethylpropane di(meth)acrylate)、二(甲基)丙烯酸金剛烷酯(adamantane di(meth)acrylate)、三羥甲丙烷三(甲基)丙烯酸酯(trimethylolpropane tri(meth)acrylate)、或其混合物。
多官能性活性能射線可聚合化合物可為例如具有分子量低於1,000且包含二或更多官能基的化合物。在此情況下,分子量可指重量平均分子量或慣用分子量(conventional molecular weight)。包含在多官能性活性能射線可聚合化合物中的環狀結構可為下列中的任一者:碳環或雜環結構;或單環或多環結構。
在本案一具體實例中,封裝層可進一步包含
單官能丙烯酸酯(monofunctional acrylate)。在一實例中,封裝樹脂及單官能丙烯酸酯在封裝層中所含之重量比分別可為60至95重量份及5至40重量份。在一實例中,封裝樹脂及單官能丙烯酸酯在封裝層中所含之重量比分別可為60至90重量份及10至40重量份或者65至90重量份及10至35重量份。在本案中,當將組成物之含量調整於上述範圍內時,即使在高溫及高濕度下亦可實現優異濕氣阻隔性質及耐熱性。單官能丙烯酸酯無特別限制,且可為丙烯酸正辛酯、丙烯酸異辛酯、丙烯酸異壬酯、丙烯酸月桂酯、丙烯酸硬脂酯(stearyl acrylate)、丙烯酸異硬脂酯(isostearyl acrylate)、丙烯酸異癸酯、2-(2-乙氧基乙氧基)乙基丙烯酸酯(2-(2-ethoxyethoxy)ethyl acrylate)、甲氧基三乙二醇丙烯酸酯(methoxy triethylene glycol acrylate)、或甲氧基聚乙二醇丙烯酸酯(methoxy polyethylene glycol acrylate)。
在本案一具體實例中,封裝層可進一步包含自由基引發劑。自由基引發劑(radical initiator)可為光引發劑或熱引發劑。光引發劑之具體類型可考量固化速率、黃化(yellowing)可能性等而適當地加以選擇。例如,可使用安息香系(benzoin-based)、羥基酮系(hydroxyketone-based)、胺基酮系(aminoketone-based)或膦氧化物系(phosphine oxide-based)光引發劑,特別是安息香(benzoin)、安息香甲醚(benzoin methyl ether)、安息香乙醚(benzoin ethyl ether)、安息香異丙醚(benzoin isopropyl
ether)、安息香正丁醚(benzoin n-butyl ether)、安息香異丁醚(benzoin isobutyl ether)、苯乙酮(acetophenone)、二甲胺基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基-2-苯基苯乙酮、2-羥基-2-甲基-1-苯基丙-1-酮(2-hydroxy-2-methyl-1-phenylpropan-1-one)、1-羥基環己基苯基酮(1-hydroxycyclohexyl phenyl ketone)、2-甲基-1-[4-(甲硫基)苯基]-2-N-啉基-丙-1-酮(2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propan-1-one)、4-(2-羥乙氧基)苯基-2-(羥基-2-丙基)酮、二苯甲酮(benzophenone)、對-苯基二苯甲酮(p-phenylbenzophenone)、4,4'-二乙胺基二苯甲酮(4,4'-diethylamino benzophenone)、二氯二苯甲酮(dichlorobenzophenone)、2-甲基蒽醌(2-methylanthraquinone)、2-乙基蒽醌、2-三級丁基蒽醌、2-胺基蒽醌、2-甲基硫代酮(2-methylthioxanthone)、2-乙基硫代酮(2-ethylthioxanthone)、2-氯硫代酮(2-chlorothioxanthone)、2,4-二甲基硫代酮(2,4-dimethylthioxanthone)、2,4-二乙基硫代酮(2,4-diethylthioxanthone)、苄基二甲縮酮(benzyl dimethyl ketal)、苯乙酮二甲縮酮(acetophenone dimethyl ketal)、對-二甲胺基苯甲酸酯、寡[2-羥基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮](oligo[2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone])、或2,4,6-三甲基苄醯基-二苯基-氧化膦(2,4,6-trimethylbenzoyl-diphenyl-phosphine
oxide)等。
所包含之自由基引發劑之重量比,相對於100重量份之活性能射線可聚合化合物,可為0.2至20重量份、0.5至18重量份、1至15重量份、或2至13重量份。因此,可有效引發活性能射線可聚合化合物之反應以及防止因固化後的殘留組分所造成之壓敏性黏著劑組成物之性質劣化。
在本案一具體實例中,封裝膜之封裝層可進一步根據封裝樹脂之類型包含固化劑。例如,可進一步包含可藉由與上述封裝樹脂反應而形成交聯結構的固化劑。
固化劑可根據封裝樹脂或該樹脂中所包含的官能基類型而適當地選擇及使用。
在一實例中,當封裝樹脂為環氧樹脂時,固化劑可為本領域已知的環氧樹脂之固化劑,例如下列中之一者或二或更多者:胺固化劑、咪唑固化劑、酚固化劑、磷固化劑、酸酐固化劑等,但本發明不限於此。
在一實例中,作為固化劑,可使用於室溫下為固相且具有熔點或分解溫度為80℃或更高之咪唑化合物。此種化合物之實例可包括例如2-甲基咪唑、2-十七基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、或1-氰乙基-2-苯基咪唑等,但本發明不限於此。
固化劑之含量可視複合物之組成例如封裝樹脂之類型或比例來選擇。例如,所包含之固化劑之重量比,相對於100重量份之封裝樹脂,可為1至20重量份、1
至10重量份或1至5重量份。然而,重量比可依封裝樹脂或該樹脂之官能基的類型或比例或待實現的交聯密度而改變。
當封裝樹脂為可藉由照射活性能射線而固化的樹脂時,可使用例如陽離子光聚合引發劑作為引發劑。
作為陽離子光聚合引發劑(cationic photopolymerization initiator),可使用鎓鹽系或有機金屬鹽系離子性陽離子引發劑或有機矽烷系或潛伏型磺酸系非離子性陽離子光聚合引發劑(non-ionic cationic photopolymerization initiator)。鎓鹽系引發劑之實例可包括二芳基錪鹽(diaryliodonium salt)、三芳基鋶鹽(triarylsulfonium salt)、芳基重氮鹽(aryldiazonium salt)等;有機金屬鹽系引發劑之實例可包括鐵-芳烴錯合物(iron-arene complex)等;有機矽烷系引發劑之實例可包括鄰硝基苄基三芳基矽基醚(o-nitrobenzyl triaryl silyl ether)、過氧化三芳基矽基(triaryl silyl peroxide)、醯基矽烷(acyl silane)等;潛伏型磺酸系引發劑(latent sulfonic acid-based initiator)之實例可包括α-磺醯氧基酮(α-sulfonyloxyketone)、α-羥基甲基安息香磺酸酯(α-hydroxymethylbenzoin sulfonate)等,但本發明不限於此。
在一實例中,可使用離子性陽離子光聚合引發劑(ionic cationic photopolymerization initiator)作為陽離子引發劑。
在一實例中,封裝層可進一步包含膠黏劑
(tackifier),其較佳可為環狀氫化烯烴系聚合物(cyclic hydrogenated olefin-based polymer)。膠黏劑可為例如藉由氫化(hydrogenating)石油樹脂(petroleum resin)而獲得之氫化石油樹脂(hydrogenated petroleum resin)。氫化石油樹脂可為部分或完全氫化,以及該等樹脂之混合物。此種膠黏劑可為具有在膠黏劑複合物中之高相容性、優異濕氣阻隔性質、及少量有機揮發性組分的膠黏劑。氫化石油樹脂之具體實例可包括氫化萜系樹脂(hydrogenated terpene-based resin)、氫化酯系樹脂(hydrogenated ester-based resin)、氫化二環戊二烯系樹脂(hydrogenated dicyclopentadiene-based resin)等。膠黏劑可具有重量平均分子量為約200至5,000。膠黏劑之含量可視需要而適當地調整。例如,膠黏劑之含量可考量下文所述之凝膠的含量而選擇,例如,所包含之膠黏劑之重量比,相對於100重量份之封裝樹脂,可為5至100重量份、8至95重量份、10至93重量份或15至90重量份。
封裝層可視需要進一步包含吸濕劑。本文所使用之用語「吸濕劑(moisture absorbent)」可指例如,可經由與滲透入下文所述之封裝膜的水或濕氣之化學反應而移除水或濕氣的材料。
例如,吸濕劑可以該吸濕劑均勻分散在封裝層中的狀態存在。此處,均勻分散狀態(uniformly dispersed state)可意指吸濕劑以相同或實質相同之密度存在於封裝層之任何部分的狀態。吸濕劑可為例如,金屬氧
化物、硫酸鹽、或有機金屬氧化物等。具體而言,硫酸鹽之實例可包括硫酸鎂、硫酸鈉、或硫酸鎳等,以及有機金屬氧化物之實例可包括辛酸氧化鋁(aluminum oxide octylate)等。金屬氧化物之具體實例可包括五氧化二磷(P2O5)、氧化鋰(Li2O)、氧化鈉(Na2O)、氧化鋇(BaO)、氧化鈣(CaO)、氧化鎂(MgO)等;金屬鹽之實例可包括硫酸鹽諸如硫酸鋰(Li2SO4)、硫酸鈉(Na2SO4)、硫酸鈣(CaSO4)、硫酸鎂(MgSO4)、硫酸鈷(CoSO4)、硫酸鎵(Ga2(SO4)3)、硫酸鈦(Ti(SO4)2)、或硫酸鎳(NiSO4)等;金屬鹵化物諸如氯化鈣(CaCl2)、氯化鎂(MgCl2)、氯化鍶(SrCl2)、氯化釔(YCl3)、氯化銅(CuCl2)、氟化銫(CsF)、氟化鉭(TaF5)、氟化鈮(NbF5)、溴化鋰(LiBr)、溴化鈣(CaBr2)、溴化鈰(CeBr3)、溴化硒(SeBr4)、溴化釩(VBr3)、溴化鎂(MgBr2)、碘化鋇(BaI2)、或碘化鎂(MgI2)等;以及金屬氯酸鹽諸如過氯酸鋇(Ba(ClO4)2)、或過氯酸鎂(Mg(ClO4)2)等,但本發明不限於此。作為可包含在封裝層中之吸濕劑,可使用其中一者或二或更多者。在一實例中,當使用其中二或更多者作為吸濕劑時,可使用經煅燒白雲石(calcined dolomite)等。
此吸濕劑之大小可根據用途而適當地調整。在一實例中,吸濕劑可調整至具有平均粒度(average particle size)為約10至15,000nm。具有平均粒度在上述範圍內之吸濕劑不會與濕氣迅速反應,使得吸濕劑可容易貯存,且可有效地移除濕氣而不會損及待封裝之元件。
吸濕劑之含量無特別限制,以及可考量所希望之阻隔性質而適當地選擇。
封裝層亦可視需要包含濕氣阻擋劑。本文所使用之用語「濕氣阻擋劑(moisture blocker)」可指與濕氣具有少許或無反應、但阻擋或干擾膜中之水或濕氣移動的材料。作為濕氣阻擋劑,例如,可使用下列中之一者或二或更多者:黏土、滑石、針狀矽石(acicular silica)、板狀矽石(platy silica)、多孔矽石(porous silica)、沸石、氧化鈦(titania)或氧化鋯(zirconia)。此外,濕氣阻擋劑之表面可經有機改質劑等處理以促進有機材料透入。作為此有機改質劑,可使用例如二甲基苄基氫化牛脂四級銨(dimethyl benzyl hydrogenated tallow quaternary ammonium)、二甲基二氫化牛脂四級銨(dimethyl dihydrogenated tallow quaternary ammonium)、甲基牛脂雙-2-羥乙基四級銨(methyl tallow bis-2-hydroxyethyl quaternary ammonium)、二甲基氫化牛脂2-乙基己基四級銨(dimethyl hydrogenated tallow 2-ethylhexyl quaternary ammonium)、二甲基脫氫牛脂四級銨(dimethyl dehydrogenated tallow quaternary ammonium)、或其混合物等。
濕氣阻擋劑之含量無特別限制,且可考量所希望之阻隔性質而適當地選擇。
封裝層除了上述成分之外可根據下文所述用途及封裝膜的製造方法而包含各種添加劑。例如,封裝層可根據所希望性質而包含適當含量的可固化材料(curable
material)、交聯劑、或填料等。
在本發明一具體實例中,封裝層可形成為具有如上述之單層結構或二或更多層結構。在本發明一具體實例中,第一層或第二層除了上述樹脂之外還可包含其他組成物,例如,上述之活性能射線可聚合化合物、熱固性化合物、自由基引發劑、膠黏劑、吸濕劑、濕氣阻擋劑、分散劑、或矽烷化合物等,以及第一層及第二層之成分可彼此相同或不同。並且,考慮到封裝膜係應用至有機電子元件,吸濕劑之含量可考量對於元件的損傷而做調整。例如,在與元件接觸的層中可包含少量或可不包含吸濕劑。在一實例中,與有機電子元件接觸之第一層或第二層可包含,相對於包含在封裝膜中的吸濕劑總質量,為0至20%之吸濕劑。此外,不與有機電子元件接觸之第二層或第一層可包含,相對於包含在封裝膜中的吸濕劑總質量,為80至100%之吸濕劑。
第一層及第二層之層壓順序無特別限制,以及第二層可形成於第一層上或反之亦然。此外,封裝層可由三或更多層構成。例如,第一層可由二或更多層構成,或第二層可由二或更多層構成。在一實例中,第二層可存在於上述金屬層的一表面,而第一層可封裝有機電子元件之整個表面。
包含在根據本案之封裝膜中的封裝層(b)之厚度無特別限制,以及可考量膜之應用根據下列條件適當地選擇。封裝層之厚度可為5至200μm、5至100μm、10至80
μm或20至70μm。在本案中,將封裝層之厚度調整至5μm或更大,因而可實現充足黏著性及物理保護性質,以及將封裝層之厚度調整至200μm或更小,因而可確保加工性及防止因濕氣反應性所造成的大厚度膨脹所致之對於有機發光二極體的沉積膜之損害。
在一實例中,根據本案之封裝膜,如圖2所示,可進一步包含設置在金屬層(11)之第二表面(112)上的保護層(14)。構成保護層(14)之材料無特別限制,以及例如可選自聚對酞酸乙二酯、聚四氟乙烯、聚乙烯、聚丙烯、聚丁烯、聚丁二烯、氯乙烯共聚物(vinyl chloride copolymer)、聚胺甲酸酯(polyurethane)、乙烯-乙酸乙烯酯、乙烯/丙烯共聚物、乙烯/丙烯酸乙酯共聚物、乙烯/丙烯酸甲酯共聚物、聚醯亞胺、耐綸、苯乙烯系樹脂或彈性體、聚烯烴系樹脂或彈性體、其他彈性體、聚氧化烯系樹脂或彈性體、聚酯系樹脂或彈性體、聚氯乙烯系樹脂或彈性體、聚碳酸酯系樹脂或彈性體、聚苯硫系樹脂或彈性體、烴類之混合物、聚醯胺系樹脂或彈性體、丙烯酸酯系樹脂或彈性體、環氧系樹脂或彈性體、聚矽氧系樹脂或彈性體、液晶聚合物及其組合,但本發明不限於此。
在一實例中,根據本案之封裝膜,如圖2所示,可進一步包含介於金屬層(11)與保護層(14)之間的黏著層(13)。黏著層(13)用以將保護層(14)附著至金屬層(11),且其材料無特別限制,以及例如可與上述封裝層之材料相同或不同。
此外,本案關於製造上述封裝膜之方法。製造封裝膜之例示方法可包含裁切封裝層之一側。另外,該製造方法可包含裁切金屬層之一側。裁切封裝層之一側以及裁切金屬層之一側的順序無特別限制,以及例如可裁切封裝層之一側然後可裁切金屬層之一側。裁切(cutting)可意指將封裝層或金屬層形成所希望形狀,例如多邊形(polygonal shape)或圓形(circular shape)。
製造該膜之方法可包含在上述裁切之前將封裝層形成為膜或薄片(sheet)形式。在一實例中,該方法可包含將包含上述構成封裝層的組分之塗覆溶液以薄片或膜之形式施加至基板或脫離膜(releasing film)上,並乾燥所施加之塗覆溶液。
此外,製造方法可包含形成金屬層。金屬層可由金屬箔形成,或可藉由將金屬沉積在基板上而形成。例如,金屬層可利用電解或輥壓製備。該製造方法可進一步包含將金屬層形成在封裝層的一表面上。
在本案中,裁切封裝層之一側可使用CO2雷射或光纖雷射(optical fiber laser)進行。此外,在一實例中,裁切金屬層之一側可使用CO2雷射、光纖雷射或切刀(knife cutter)進行。在一實例中,裁切可在透過雷射確保封裝層之缺口或傾斜部分之後藉由使用切刀裁切金屬層的方法進行。例如,裁切可藉由採用適用模式諸如木製切刀、尖刀(pinnacle blade)、切片刀(slitting knife)、或超級刀(super cutter)等來實施。在本案一具體實例中,裁切表
面可為裁切之後的封裝層或金屬層之一側。再者,在一實例中,封裝層之與雷射接觸的裁切表面(surface)或側(side)可藉由雷射固化。因此,裁切封裝層及在封裝層之一側形成固化部分可在一個製程(例如雷射製程)中進行。
具體而言,裁切封裝層之一側可使用具有大小為30μm至1000μm、50μm至900μm、60μm至800μm、70μm至500μm、80μm至300μm、100μm至280μm或110μm至260μm之雷射束進行。在本案中,雷射束之大小可根據在一側之固化部分的寬度而適當地調整。
此外,裁切封裝層之一側可例如根據雷射之輸出及/或重複率(repetition rate)而調整。在一實例中,雷射之輸出(output)可調整至約100W至250W、120W至240W或180W至220W。再者,裁切封裝層之一側可使用具有裁切速率(cutting rate)為200mm/s至1500mm/s、330mm/s至1200mm/s、520mm/s至1100mm/s或630mm/s至910mm/s之雷射束進行。在本案中,當封裝層之一側的形成及裁切係藉由將雷射之輸出或裁切速率調整於上述範圍內而同時進行時,缺口、固化部分或傾斜部分可製備成所希望形式。
在本案一具體實例中,裁切金屬層之一側可使用具有大小為1μm至30μm之雷射束進行。再者,雷射裁切可使用具有輸出為70W至150W、80W至130W或90W至110W之雷射束進行。此外,雷射裁切可使用具有裁切速率為200mm/s至1500mm/s、330mm/s至1200mm/s、
520mm/s至1100mm/s或630mm/s至910mm/s之雷射束進行。在本案中,當金屬層之一側的形成及裁切係藉由將雷射之輸出或裁切速率調整於上述範圍內而同時進行時,可調整突出以及缺口可製備成所希望形式。
此外,本案關於有機電子裝置。有機電子裝置可包含,如圖3所示,基板(2);形成於該基板(2)上之有機電子元件(21)、及用以封裝該有機電子元件(21)之整個表面(例如上及側表面二者)的封裝膜(1)。封裝膜(1)可包含包括呈交聯狀態之壓敏性黏著劑組成物或黏著劑組成物的封裝層(12)。再者,有機電子裝置可形成為使得封裝層與有機電子元件之整個表面接觸。此外,封裝層(12)可形成為具有如上述之雙層結構。此處,雙層結構可由第一層(121及122)或第二層(121及122)、或第一層(122)及第二層(121)構成。
該有機電子元件可為例如,有機發光二極體。
此外,本發明關於製造有機電子裝置之方法。有機電子裝置可例如藉由使用封裝膜來製造。
封裝層在有機電子裝置中展現優異濕氣阻隔性質及光學性質,以及可形成為有效固定且支撐基板及金屬層之封裝層。
此外,不論有機電子裝置之類型(諸如頂部發射型(top emission type)、底部發射型(bottom emission type)等)為何,封裝層均可安定地形成。
本文所使用之用語「封裝層」可指覆蓋有機電子元件之上及側表面二者的壓敏性黏著劑或黏著劑。
有機電子裝置之製造方法可包含,例如,將封裝膜施加至其上形成有機電子元件之基板以覆蓋該有機電子元件;以及固化該封裝膜。封裝膜之固化係指將封裝層固化。
本文所使用之用語「固化」可意指根據本發明之壓敏性黏著劑組成物經由加熱或UV照射製程形成交聯結構以製備壓敏性黏著劑。或者,該用語可意指將黏著劑組成物製備成黏著劑形式。
具體而言,透明電極係藉由真空沉積或濺鍍等形成於作為基板之玻璃或聚合物膜上,由例如電洞傳輸層、發光層、電子傳輸層等構成的發光有機材料層係形成於透明電極上,然後電極層係進一步形成於其上以形成有機電子元件。隨後,經歷上述製程之在基板上的有機電子元件之整個表面係置為以用封裝膜的封裝層覆蓋之。
本案提供封裝膜,其可形成為具有可有效阻擋自外部流入有機電子裝置之濕氣或氧的結構、具有優異處理性質及加工性、以及具有優異的與有機電子元件之結合性質及耐久性。
1‧‧‧封裝膜
11‧‧‧金屬層
111‧‧‧第一表面
112‧‧‧第二表面
12‧‧‧封裝層
121‧‧‧封裝層之第一層或第二層
122‧‧‧封裝層之第一層或第二層
a‧‧‧缺口之大小(寬度)
b‧‧‧封裝層之厚度
c‧‧‧固化部分之大小(寬度)
d‧‧‧傾斜部分之大小(寬度)
e‧‧‧突出之大小
13‧‧‧黏著層
14‧‧‧保護層
2‧‧‧基板
21‧‧‧有機電子元件
圖1至2顯示根據本發明一實例之封裝膜的橫斷面圖;以及圖3為根據本發明一實例之有機電子裝置的橫斷面圖。
下文,參照實施例及對照實例更詳細說明上述內容。然而,本案不限於以下實例。
在室溫下將60g之聚異丁烯樹脂(重量平均分子量為450,000)及作為膠黏劑的40g之氫化二環戊二烯系樹脂(hydrogenated dicyclopentadiene-based resin)(軟化溫度(softening temperature)為125℃)添加至反應器,然後於其中添加20g之多官能丙烯酸系單體(multifunctional acrylic monomer)(TMPTA)及1g之光引發劑,並用甲苯進行稀釋,使得所得之溶液具有固體含量(solid content)為約25wt%。
將作為吸濕劑之100g的經煅燒白雲石與作為溶劑之甲苯以固體濃度為50wt%混合之以製備吸濕劑溶液。在室溫下將70g之聚異丁烯樹脂(重量平均分子量為
450,000)及作為膠黏劑的30g之氫化二環戊二烯系樹脂(軟化溫度為125℃)添加至反應器,然後於其中添加30g之多官能丙烯酸系單體(TMPTA)及2g之光引發劑,並用甲苯進行稀釋,使得所得之溶液具有固體含量為約25wt%。將事先製備之吸濕劑溶液與所得之溶液混合並均質化(homogenize)。
將於步驟(1)中製備之第二層溶液施加在脫離PET(releasing PET)之脫離表面(releasing surface)上,並於110℃乾燥10分鐘以形成具有厚度為10μm之層。
將於步驟(2)中製備之第二層溶液施加在脫離PET之脫離表面上,並於130℃乾燥3分鐘以形成具有厚度為30μm之層。
將這兩層層壓以製造多層膜。
將如此製備之封裝層的經脫離處理之PET(release-treated PET)卸除,以及層壓所得之封裝層使得由步驟(2)中所製備之第二層溶液所形成的第二層與事先製備之金屬層(Invar)的表面接觸。
在改變CO2雷射(E-400i,Coherent)及光纖雷射(YLR-300-AC-Y11)之條件(束大小、輸出、波長、速度、重複率(repetition rate)等)下,製造經層壓(laminated)
以及與金屬整合(metal-integrated)之封裝膜,使得缺口(a)之大小為25μm以及傾斜部分(d)之寬度為5μm。
第二層溶液係以與實施例1之步驟(2)相同方式製備,但添加60g之聚異丁烯樹脂、40g之膠黏劑、20g之多官能丙烯酸系單體及1g之光引發劑。
封裝膜係以與實施例1相同方式製造,但由步驟(2)中製備之第二層溶液所形成的第二層具有厚度為50μm,缺口(a)之大小為180μm,以及傾斜部分(d)之寬度為60μm。
各層溶液係以與實施例1相同方式製備,但藉由下列方法製備第一層溶液代替實施例1之步驟(1)中所製備的第二層溶液。
製備其中50g之環氧樹脂(KSR 177,Kukdo Chemical Co.,Ltd)、50g之環氧樹脂(YD-014,Kukdo Chemical Co.,Ltd)及50g之苯氧基樹脂(phenoxy resin)(YP-55,Tohto Kasei Co.,Ltd)係用甲基乙基酮稀釋的溶液(固體含量為70%),然後予以均質化。將3g之咪唑(固化劑,Shikoku Chemicals Corporation)添加至經均質化之溶液,然後以高速攪拌1小時以製備第一層溶液。
封裝膜係以與實施例1相同方式製造,但由如
此製備之第一層溶液形成具有厚度為20μm之層,由實施例1之步驟(2)中製備的第二層溶液形成具有厚度為30μm之層,缺口(a)之大小為600μm,以及傾斜部分(d)之寬度為400μm。
以與實施例3相同方式製備第一層溶液。
將作為吸濕劑之100g經煅燒白雲石與作為溶劑之甲基乙基酮以固體濃度為50wt%混合之以製備吸濕劑溶液。在室溫下於反應器中製備其中50g之環氧樹脂(KSR 177,Kukdo Chemical Co.,Ltd)、50g之環氧樹脂(YD-014,Kukdo Chemical Co.,Ltd)及50g之苯氧基樹脂(YP-55,Tohto Kasei Co.,Ltd)係用甲基乙基酮稀釋的溶液(固體含量為70%),然後予以均質化。將3g之咪唑(固化劑,Shikoku Chemicals Corporation)添加至經均質化之溶液,然後以高速攪拌1小時以製備第一層溶液。將事先製備之吸濕劑溶液與所得之溶液混合並予以均質化。
封裝膜係以與實施例1相同方式製造,但由在步驟(1)中製備之第一層溶液形成具有厚度為20μm之層,由步驟(2)中製備之第一層溶液形成具有厚度為30μm之層,缺口(a)之大小為900μm,以及傾斜部分(d)之寬度為
800μm。
封裝膜係以與實施例1相同方式製造,但缺口(a)之大小為4μm以及傾斜部分(d)之寬度為1μm。
封裝膜係以與實施例3相同方式製造,但製造封裝膜時缺口(a)之大小為15μm以及傾斜部分(d)之寬度為5μm。
將作為吸濕劑之100g經煅燒白雲石與作為溶劑之甲基乙基酮以固體濃度為50wt%混合之以製備吸濕劑溶液。在室溫下於反應器中製備其中80g之環氧樹脂(KSR 177,Kukdo Chemical Co.,Ltd)、4g之環氧樹脂(YD-014,Kukdo Chemical Co.,Ltd)及30g之苯氧基樹脂(PKHA,Gabriel Phenoxies,Inc)係用甲基乙基酮稀釋的溶液(固體含量為70%),然後予以均質化。將3g之咪唑(固化劑,Shikoku Chemicals Corporation)添加至經均質化之溶液,然後以高速攪拌1小時以製備第一層溶液。將事先製備之吸濕劑溶液與所得之溶液混合並予以均質化。
將第一層溶液施加在脫離PET之脫離表面上,
並於130℃乾燥7分鐘以形成具有厚度為50μm之第一層。
此外,缺口(a)為18μm以及傾斜部分(d)之寬度為10μm。
封裝膜係以與實施例1相同方式製造,但封裝層係由單層之第一層形成。
封裝膜係以與實施例4相同方式製造,但製造封裝膜時缺口(a)之大小為1,100μm以及傾斜部分(d)之寬度為100μm。
封裝膜係以與實施例3相同方式製造,但製造封裝膜時缺口(a)之大小為1,200μm以及傾斜部分(d)之寬度為1,100μm。
將有機電子元件沉積在玻璃基板上,使用真空結合機(vacuum bonding machine)在50℃、真空度為50mTorr、以及0.4MPa之條件下將實施例及對照實例中所製造之封裝膜結合於該元件上,然後在100℃進行固化製程3小時,以製造有機電子面板(organic electronic panel)。測定是否因封裝層由金屬層末端溢流至外部而造成污染發生。
經由TA Instruments之市售ARES測量實施例及對照實例中所製備之封裝層的孟納黏度。孟納黏度係使用具有8mm直徑之平板夾(plate jig)在5%應變(strain)、頻率為1Hz以及溫度為100℃之條件下根據剪應力而測量。
可看出,在對照實例4及5之情況下,缺口之大小或傾斜部分之寬度明顯較大,因而未發生側邊之污染,但金屬層之邊緣與有機電子元件之電極接觸,或外來材料係置於封裝層的邊緣,因而發生電極短路。
Claims (20)
- 一種用於有機電子元件之封裝膜,其包含:金屬層,其具有第一表面及相對於該第一表面之第二表面;以及封裝層,其設置於該第一表面上,位於該第一表面的邊緣以內,使得在其一些區域的邊緣與該第一表面的邊緣之間形成具有大小為20μm至1,000μm之缺口,且在其一些區域的邊緣具有傾斜部分,其中,該封裝層封裝形成於基板上之有機電子元件之整個表面。
- 如申請專利範圍第1項之封裝膜,其中,該傾斜部分具有的寬度(d)之範圍為2μm至1,000μm。
- 如申請專利範圍第1項之封裝膜,其中,該封裝層具有的孟納黏度(Mooney viscosity)(η*)之範圍為2.0×10 Pa.s至108 Pa.s,其係在5%應變(strain)、頻率為1Hz以及溫度為100℃之條件下根據剪應力而測量。
- 如申請專利範圍第1項之封裝膜,其中,該封裝層具有在其一些區域的邊緣之固化部分(cured part)。
- 如申請專利範圍第4項之封裝膜,其中,該固化部分具有的寬度之範圍為10μm至1,100μm。
- 如申請專利範圍第1項之封裝膜,其中,該金屬層包含金屬、金屬氧化物、金屬氮化物、金屬碳化物、金屬氮氧化物、金屬硼氧化物(metal oxyboride)、及其混合物中之任一者。
- 如申請專利範圍第1項之封裝膜,其中,該金屬層包含鐵、鋁、銅、鎳、氧化矽、氧化鋁、氧化鈦、氧化銦、氧化錫、銦錫氧化物、氧化鉭、氧化鋯、氧化鈮、及其混合物中之任一者。
- 如申請專利範圍第1項之封裝膜,其進一步包含設置在該金屬層之第二表面上的保護層以及設置在該金屬層與該保護層之間的黏著層。
- 如申請專利範圍第1項之封裝膜,其中,該封裝層係形成為具有單一層或二或更多層。
- 如申請專利範圍第1項之封裝膜,其中,該封裝層包含第一層,該第一層包含具有玻璃轉化溫度為85℃或更高之封裝樹脂。
- 如申請專利範圍第1項之封裝膜,其中,該封裝層包含第二層,該第二層包含具有玻璃轉化溫度為0℃或更低之封裝樹脂。
- 如申請專利範圍第1項之封裝膜,其中,該封裝層包含吸濕劑(moisture absorbent)。
- 一種製造如申請專利範圍第1項之封裝膜的方法,其包含裁切封裝層之一側。
- 如申請專利範圍第13項之方法,其包含裁切金屬層之一側。
- 如申請專利範圍第13項之方法,其中,裁切封裝層之一側係使用CO2雷射或光纖雷射(optical fiber laser)進行。
- 如申請專利範圍第14項之方法,其中,裁切金屬層之一側係使用CO2雷射、光纖雷射或切刀(knife cutter)進行。
- 如申請專利範圍第13項之方法,其中,裁切封裝層之一側係使用具有大小為50μm至500μm之雷射束進行。
- 如申請專利範圍第14項之方法,其中,裁切金屬層之一側係使用具有大小為1μm至30μm之雷射束進行。
- 一種有機電子裝置,其包含基板、形成於該基板上之有機電子元件、以及用以封裝該有機電子元件之整個表面的如申請專利範圍第1項之封裝膜。
- 一種製造有機電子裝置之方法,其包含:將如申請專利範圍第1項之封裝膜施加至其上形成有機電子元件之基板以覆蓋該有機電子元件;以及固化該封裝膜。
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WO2017179906A1 (ko) | 2017-10-19 |
KR101888351B1 (ko) | 2018-08-14 |
TW201808602A (zh) | 2018-03-16 |
JP2019514175A (ja) | 2019-05-30 |
WO2017179907A1 (ko) | 2017-10-19 |
TW201804635A (zh) | 2018-02-01 |
CN109155373A (zh) | 2019-01-04 |
JP6783873B2 (ja) | 2020-11-11 |
CN109153216A (zh) | 2019-01-04 |
TWI650236B (zh) | 2019-02-11 |
JP6671537B2 (ja) | 2020-03-25 |
CN109153216B (zh) | 2021-03-16 |
KR20170116987A (ko) | 2017-10-20 |
US20190115562A1 (en) | 2019-04-18 |
CN109155373B (zh) | 2021-02-02 |
JP2019517121A (ja) | 2019-06-20 |
US10593908B2 (en) | 2020-03-17 |
KR101790472B1 (ko) | 2017-10-26 |
US20190157612A1 (en) | 2019-05-23 |
US10937990B2 (en) | 2021-03-02 |
KR20170116986A (ko) | 2017-10-20 |
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