CN109155373A - 封装膜 - Google Patents
封装膜 Download PDFInfo
- Publication number
- CN109155373A CN109155373A CN201780030138.8A CN201780030138A CN109155373A CN 109155373 A CN109155373 A CN 109155373A CN 201780030138 A CN201780030138 A CN 201780030138A CN 109155373 A CN109155373 A CN 109155373A
- Authority
- CN
- China
- Prior art keywords
- layer
- encapsulating film
- encapsulated layer
- resin
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 291
- 229920005989 resin Polymers 0.000 claims description 114
- 239000011347 resin Substances 0.000 claims description 114
- 229910052751 metal Inorganic materials 0.000 claims description 83
- 239000002184 metal Substances 0.000 claims description 82
- 239000000203 mixture Substances 0.000 claims description 36
- 238000005520 cutting process Methods 0.000 claims description 35
- -1 Si oxide Chemical compound 0.000 claims description 27
- 239000003230 hygroscopic agent Substances 0.000 claims description 24
- 238000004382 potting Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 18
- 239000013307 optical fiber Substances 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 229920001971 elastomer Polymers 0.000 description 55
- 239000000806 elastomer Substances 0.000 description 55
- 239000000243 solution Substances 0.000 description 43
- 239000003822 epoxy resin Substances 0.000 description 33
- 229920000647 polyepoxide Polymers 0.000 description 33
- 239000003795 chemical substances by application Substances 0.000 description 26
- 238000001723 curing Methods 0.000 description 24
- 150000001875 compounds Chemical class 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 16
- 239000003999 initiator Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 125000000524 functional group Chemical group 0.000 description 14
- 229920000642 polymer Polymers 0.000 description 14
- 239000000178 monomer Substances 0.000 description 13
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 10
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 10
- 150000002148 esters Chemical class 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- 238000007711 solidification Methods 0.000 description 9
- 230000008023 solidification Effects 0.000 description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 150000001336 alkenes Chemical class 0.000 description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 7
- 230000009477 glass transition Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 7
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 239000003340 retarding agent Substances 0.000 description 6
- HECLRDQVFMWTQS-UHFFFAOYSA-N Dicyclopentadiene Chemical compound C1C2C3CC=CC3C1C=C2 HECLRDQVFMWTQS-UHFFFAOYSA-N 0.000 description 5
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 5
- 238000000265 homogenisation Methods 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 239000003760 tallow Substances 0.000 description 5
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- 229920002367 Polyisobutene Polymers 0.000 description 4
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 4
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 4
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 150000002924 oxiranes Chemical class 0.000 description 4
- 229930185605 Bisphenol Natural products 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 239000004821 Contact adhesive Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 238000012663 cationic photopolymerization Methods 0.000 description 3
- 239000004567 concrete Substances 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 3
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 3
- 229920006287 phenoxy resin Polymers 0.000 description 3
- 239000013034 phenoxy resin Substances 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920000098 polyolefin Polymers 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- PUAQLLVFLMYYJJ-UHFFFAOYSA-N 2-aminopropiophenone Chemical compound CC(N)C(=O)C1=CC=CC=C1 PUAQLLVFLMYYJJ-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- OBOSXEWFRARQPU-UHFFFAOYSA-N 2-n,2-n-dimethylpyridine-2,5-diamine Chemical compound CN(C)C1=CC=C(N)C=N1 OBOSXEWFRARQPU-UHFFFAOYSA-N 0.000 description 2
- CXMYWOCYTPKBPP-UHFFFAOYSA-N 3-(3-hydroxypropylamino)propan-1-ol Chemical compound OCCCNCCCO CXMYWOCYTPKBPP-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical compound CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 229920000800 acrylic rubber Polymers 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N alpha-methacrylic acid Natural products CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 2
- 229960002130 benzoin Drugs 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 229940106691 bisphenol a Drugs 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 230000031709 bromination Effects 0.000 description 2
- 238000005893 bromination reaction Methods 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- GHLKSLMMWAKNBM-UHFFFAOYSA-N dodecane-1,12-diol Chemical compound OCCCCCCCCCCCCO GHLKSLMMWAKNBM-UHFFFAOYSA-N 0.000 description 2
- HNRMPXKDFBEGFZ-UHFFFAOYSA-N ethyl trimethyl methane Natural products CCC(C)(C)C HNRMPXKDFBEGFZ-UHFFFAOYSA-N 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- 235000019382 gum benzoic Nutrition 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- YDLYQMBWCWFRAI-UHFFFAOYSA-N hexatriacontane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC YDLYQMBWCWFRAI-UHFFFAOYSA-N 0.000 description 2
- 229920001519 homopolymer Polymers 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 229920001684 low density polyethylene Polymers 0.000 description 2
- 239000004702 low-density polyethylene Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920000346 polystyrene-polyisoprene block-polystyrene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 2
- 235000011152 sodium sulphate Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910001631 strontium chloride Inorganic materials 0.000 description 2
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 2
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Abstract
本申请涉及封装膜、其制造方法、包括其的有机电子器件、以及制造使用其的有机电子器件的方法。本申请提供了这样的封装膜:其可以形成为具有可以有效阻挡水分或氧从外部流入有机电子器件中的结构,具有优异的处理特性和可加工性,并且还具有优异的与有机电子元件的结合特性和耐久性。
Description
技术领域
相关申请的交叉引用
本申请要求基于2016年4月12日的韩国专利申请第10-2016-0044519号和2016年4月12日的韩国专利申请第10-2016-0044520号的优先权,其全部内容通过引用并入本文。
技术领域
本申请涉及封装膜、其制造方法、包括其的有机电子器件、以及制造使用其的有机电子器件的方法。
背景技术
有机电子器件(OED)是指包括其中利用空穴和电子发生电荷交换的有机材料层的器件,其实例可以为光伏器件、整流器、发射器、有机发光二极管(OLED)等。
在有机电子器件中,与常规光源相比,有机发光二极管(OLED)消耗更少的功率,具有高反应速度并且有利于使显示装置或照明设备的厚度最小化。此外,OLED具有优异的空间利用率,因而有望应用于各种领域,包括所有类型的便携式装置、监视器、笔记本电脑和电视机。
在OLED的商业化和用途扩展中,最主要的问题是耐久性。包含在OLED中的有机材料、金属电极等非常容易因外部因素(例如水分等)而氧化。因此,包括OLED的产品对环境因素非常敏感。为了解决上述问题,将封装材料应用于有机电子器件,但是薄封装材料的自动分布过程困难,并且在基底(例如金属层)与封装层的附接过程中因逐渐缩短的边框而导致故障(例如对准误差等)的可能性高。因此,该技术已发展为通过辊对辊法将封装层与基底预先附接,然后切割以适用面板的方式。这样的过程可以解决在封装层与基底的附接过程中可能发生的问题,但是封装层和基底的尺寸几乎相同,使得有机电子器件和面板可能因封装层在结合和热固化过程中的溢流而被污染。因此,需要用于解决上述问题的方法。
发明内容
技术问题
本申请提供了这样的封装膜:其可以形成为具有可以有效阻挡水分或氧从外部流入有机电子器件中的结构,具有优异的处理特性和可加工性,并且还具有优异的与有机电子元件的结合特性和耐久性。
技术方案
本申请涉及封装膜。封装膜可以应用于封装或包封有机电子器件,例如OLED等。在本说明书中,封装膜可以表示为封装材料或密封材料。
本文所使用的术语“有机电子器件(OED)”是指具有包括在一对相对电极之间的有机材料层(其中利用空穴和电子发生电荷交换)的结构的制品或器件。其实例可以包括光伏器件、整流器、发射器、有机发光二极管(OLED)等,但本申请不限于此。在本发明的一个实例中,有机电子器件可以为OLED。
如图1所示,示例性封装膜可以包括金属层(11),该金属层具有第一表面(111)和与第一表面(111)相对的第二表面(112);以及设置在金属层(11)的第一表面(111)上的封装层(12)。此处,封装层(12)可以设置在第一表面(111)上并且位于第一表面(111)的边缘内侧,使得在其一些区域的边缘与第一表面(111)的边缘之间形成尺寸为20μm至1000μm、23μm至980μm或24μm至950μm的间隙(a)。间隙(a)可以存在于封装层(12)的至少一些边缘处,但本发明不限于此,并且间隙(a)可以存在于所有边缘处。如图1所示,术语“间隙”是指层合的封装层(12)与金属层(11)的侧端之间的间隔。
此外,封装层可以在其一些区域的边缘处包括倾斜部分(d)。像金属层一样,封装层(12)可以包括第一表面和与第一表面相对的第二表面。此处,封装层(12)的第二表面可以面对金属层(11)的第一表面(111),并且封装层(12)的第二表面可以与金属层(11)的第一表面(111)接触,如图1所示。倾斜部分(d)的宽度可以指在封装层(12)的第二表面的侧端处的法线与封装层(12)的第一表面的侧端处的法线之间的距离(d),并且可以在2μm至1000μm、3μm至930μm或4μm至880μm的范围内。此处,法线可以是相对于封装层的第一表面和/或第二表面的法线。在本说明书中,当封装层(12)具有倾斜部分(d)时,以下将描述的固化部分(c)的宽度可以从封装层的第二表面的侧端测量,如图1所示。此外,在本说明书中,当封装层(12)具有倾斜部分(d)时,间隙(a)的尺寸可以从封装层的第一表面或第二表面的侧端测量。图1示出了其中间隙(a)的尺寸从封装层的第一表面的侧端测量的实例。此处,封装层(12)的第二表面的侧端可以比封装层(12)的第一表面的侧端更接近金属层(11)的边缘。本申请通过反映取决于倾斜部分的封装层的流动性差异,提供了具有高可靠性的封装膜。
本申请通过将具有倾斜部分的封装层的间隙的尺寸调整在上述范围内提供了这样的封装膜:其具有优异的板间结合特性和耐久性,并且尽管封装层在结合和固化过程中的高温下流动,但是没有封装层的溢流。在形成倾斜部分和间隙时,其尺寸可以考虑与金属层接触的封装层的流动性,特别是根据与金属层一体设置的本申请的封装膜的特性进行调整。此外,在形成倾斜部分和间隙时,其尺寸可以根据封装层的组成、封装层或以下将描述的施加有封装层的物体(例如,其上形成有有机电子元件的基底)的特性进行调整,但本发明不限于此。
在一个实例中,间隙(a)的尺寸与倾斜部分(d)的尺寸之和(a+d)可以在20μm至2000μm、40μm至1800μm或50μm至1700μm的范围内。本申请通过将尺寸(a+d)调整在上述范围内通过反映取决于倾斜部分的存在的封装层的流动性差异,提供了在结合和固化过程中具有优异结合特性和可靠性的封装膜。
此外,根据本申请的封装膜可以满足以下一般方程式1。
[一般方程式1]
0.95≤a/b≤25
在一般方程式1中,“a”为间隙的尺寸,并且“b”为封装层的厚度。“a/b”可以为0.95至25、1至22或1至20。本申请通过将间隙与封装层的厚度之比调整在上述范围内通过反映取决于厚度的封装层的流动性差异,提供了具有高可靠性的封装膜。
在一个实例中,金属层和/或封装层可以具有多边形形状或圆形形状。在根据本申请的具有多边形形状或圆形形状的封装膜中,金属层的侧端位置和封装层的侧端位置可以相同,但本发明不限于此,并且可以在封装膜的至少一些区域的边缘处形成上述预定间隙(a)。在另一个实例中,封装膜可以在所有边缘处具有间隙(a)。本文所使用的术语“相同”或“一致”是指基本上相同或基本上一致,其中,误差可以为±5μm或±1μm。
此外,在本申请的一个具体实例中,封装层的门尼粘度(Mooney viscosity)(η*)范围可以为2.0×10Pa·s至108Pa·s、5.0×10Pa·s至107Pa·s、102Pa·s至106Pa·s或102Pa·s至5×105Pa·s,门尼粘度是在5%应变、1Hz频率和100℃温度的条件下根据剪应力测量的。因此,本申请可以提供具有高可靠性的膜,其中通过将粘度调整在上述范围内来控制封装层在结合和固化过程中的流动,并且因此通过将间隙(a)调整在上述范围内而使对准误差最小化。
在本申请的一个具体实例中,封装层(12)可以在其一些区域的边缘处具有固化部分。在本申请中,封装层可以在其至少一些区域的侧面处具有固化部分以控制在将膜应用于有机电子元件的封装时由热引起的封装层的流动。此处,固化部分(c)的宽度可以为10μm至1100μm、16μm至920μm、23μm至820μm、或38μm至770μm。此外,固化部分的固化程度范围可以为10%至100%、20%至85%、25%至65%、或33%至48%。宽度或固化程度的范围可以为用于使结合时密封层流动的宽度相对于上述间隙最小化的范围。固化程度可以通过本领域已知的方法测量。例如,可以使用ATR FT-IR测量固化程度。可以使用ATR FT-IR将固化程度测量为待测量固化程度的样品的可固化官能团的峰(P2)相对于未固化样品的可固化官能团的峰(P1)的变化量(P1-P2)的百分比。即,可以通过(P1-P2)/P1×100来计算固化程度。此处,可固化官能团可以为例如环氧基。当可固化官能团为环氧基时,可以通过使用拉曼显微镜分析从封装层的最外围向内间隔10μm处的在908cm-1处的环氧基峰的高度来导出固化率。即,在一个实例中,可以测量可固化官能团的峰的强度或者可以分析并计算其面积来测量固化程度。
在一个实例中,如图1所示,根据本申请的封装膜在金属层(11)的第二表面(112)的一些区域的边缘处可以具有尺寸为50μm或更小、40μm或更小、30μm或更小或者10μm或更小的突出部(e)。此处,其下限没有特别限制,并且其尺寸可以优选为0μm或0.1μm。突出部(e)的尺寸可以如图1所示以相对于金属层(11)的第二表面(112)的法线方向进行测量。通常,当切割封装膜时,在金属层上可能产生毛边,该毛边可以为例如突出部的形式。因此,本申请可以提供具有高可靠性的封装膜,其可以通过将金属层(11)的突出部(e)的尺寸调整在上述范围内而防止在过程中由突出部(e)引起的问题例如凹陷、压迫等。
此外,在一个实例中,根据本申请的封装膜中的封装层的侧表面可以为用激光束切割的表面,该激光束的尺寸为30μm至1000μm、50μm至900μm、60μm至800μm、70μm至500μm、80μm至300μm、100μm至280μm、或110μm至260μm。即,通过激光束来切割封装层,并且激光束的强度可以在30μm至1000μm的范围内。此外,激光可以为CO2激光或光纤激光,但本发明不限于此。另外,可以通过进行一次或更多次封装层的激光切割来调整间隙的期望尺寸。
在本申请的一个具体实例中,封装膜的金属层可以为透明或不透明的。金属层可以由薄膜形式的金属箔形成,或者通过将金属沉积在聚合物基底层上来形成。金属层没有限制,只要材料具有水分阻挡特性并且包含金属即可。金属层可以包含以下中的任一者:金属、金属氧化物、金属氮化物、金属碳化物、金属氮氧化物、金属硼氧化物及其混合物。例如,金属层可以包含其中一种金属中添加有一种或更多种金属元素或非金属元素的合金,例如铁-镍合金或不锈钢(SUS)。此外,在一个实例中,金属层可以包含铜、铝、镍、硅氧化物、铝氧化物、钛氧化物、铟氧化物、锡氧化物、铟锡氧化物、钽氧化物、锆氧化物、铌氧化物及其混合物。金属层可以通过电解、轧制、蒸镀、电子束蒸镀、溅射、反应溅射、化学气相沉积、等离子体化学气相沉积、或电子回旋共振源等离子体化学气相沉积来沉积。在本发明的一个实施方案中,可以通过反应溅射来沉积金属层。
优选地,金属层的热导率可以为50W/mK或更高、60W/mK或更高、70W/mK或更高、80W/mK或更高、90W/mK或更高、100W/mK或更高、110W/mK或更高、120W/mK或更高、130W/mK或更高、140W/mK或更高、150W/mK或更高、200W/mK或更高、或者250W/mK或更高。当金属层具有这样的高热导率时,在金属层的结合过程时在结合界面处产生的热可以更迅速地放出。此外,高热导率有助于将在有机电子器件的操作期间累积的热迅速放出至外部,因而可以将有机电子器件本身的温度保持得较低,并且减少破裂和缺陷发生。
本文所使用的术语“热导率”是指材料传导热的能力,并且可以以W/mK为单位来表示。该单位表示在相同温度和距离下的材料传递热的程度,并且指的是热的单位(瓦特)相对于距离的单位(米)和温度的单位(开尔文)。
在本申请的一个具体实例中,封装层可以包含压敏粘合剂组合物或粘合剂组合物以形成压敏粘合层或粘合层。封装层可以为单层或者两个或更多个层。当两个或更多个层构成封装层时,封装层的各层的组成可以相同或不同,并且可以包括以下将描述的第一层和/或第二层。
在一个实例中,封装层可以包含封装树脂。在本申请的一个具体实例中,构成封装层的第一层的封装树脂可以为玻璃化转变温度为85℃或更高、90℃或更高、95℃或更高、或者100℃或更高的树脂。此外,构成封装层的第二层的封装树脂可以为玻璃化转变温度为0℃或更低,例如-10℃或更低、-20℃或更低、-30℃或更低、或者-40℃或更低的树脂。除非另有说明,否则如本文所使用的玻璃化转变温度是指:在约100℃的温度下固化约120分钟之后的玻璃化转变温度;以约1J/cm2或更大的照射量进行紫外线(UV)照射之后的玻璃化转变温度;或者在照射UV线然后进一步进行热固化之后的玻璃化转变温度。
在本申请的一个具体实例中,封装层可以由以单层存在的第一层或第二层构成,第一层可以由两个或更多个层构成,或者第二层可以由两个或更多个层构成。此外,可以用第一层和第二层形成双层结构的封装层。
在一个实例中,封装树脂可以为基于苯乙烯的树脂或弹性体、基于聚烯烃的树脂或弹性体、其他弹性体、基于聚氧化烯的树脂或弹性体、基于聚酯的树脂或弹性体、基于聚氯乙烯的树脂或弹性体、基于聚碳酸酯的树脂或弹性体、基于聚苯硫醚的树脂或弹性体、烃的混合物、基于聚酰胺的树脂或弹性体、基于丙烯酸酯的树脂或弹性体、基于环氧化合物的树脂或弹性体、基于有机硅的树脂或弹性体、基于氟的树脂或弹性体、其混合物等。
基于苯乙烯的树脂或弹性体可以为例如苯乙烯-乙烯-丁二烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-异戊二烯-苯乙烯嵌段共聚物(SIS)、丙烯腈-丁二烯-苯乙烯嵌段共聚物(ABS)、丙烯腈-苯乙烯-丙烯酸酯嵌段共聚物(ASA)、苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、基于苯乙烯的均聚物或其混合物。基于聚烯烃的树脂或弹性体可以为例如基于高密度聚乙烯的树脂或弹性体、基于低密度聚乙烯的树脂或弹性体、基于聚丙烯的树脂或弹性体或者其混合物。弹性体可以为例如基于热塑性酯的弹性体、基于烯烃的弹性体、基于有机硅的弹性体、丙烯酸类弹性体、其混合物等。其中,作为基于热塑性烯烃的弹性体,可以使用聚丁二烯树脂或弹性体、聚异丁烯树脂或弹性体等。聚氧化烯树脂或弹性体可以为例如基于聚甲醛的树脂或弹性体、基于聚氧化乙烯的树脂或弹性体、其混合物等。基于聚酯的树脂或弹性体可以为例如基于聚对苯二甲酸乙二醇酯的树脂或弹性体、基于聚对苯二甲酸丁二醇酯的树脂或弹性体、其混合物等。基于聚氯乙烯的树脂或弹性体可以为例如聚偏二氯乙烯等。烃的混合物可以为例如三十六烷、石蜡等。基于聚酰胺的树脂或弹性体可以为例如尼龙等。基于丙烯酸酯的树脂或弹性体可以为例如聚(甲基)丙烯酸丁酯等。基于环氧化合物的树脂或弹性体可以为例如:双酚型,如双酚A、双酚F、双酚S、其氢化产物等;酚醛清漆型,如苯酚酚醛清漆、甲酚酚醛清漆等;含氮环状化合物,如异氰脲酸三缩水甘油酯、乙内酰脲等;脂环型;脂族型;芳族型,如萘、联苯等;缩水甘油基型,如缩水甘油醚、缩水甘油胺、缩水甘油酯等;二环型,如二环戊二烯等;酯;醚酯;或其混合物。基于有机硅的树脂或弹性体可以为例如聚二甲基硅氧烷等。此外,基于氟的树脂或弹性体可以为例如聚三氟乙烯树脂或弹性体、聚四氟乙烯树脂或弹性体、聚氯三氟乙烯树脂或弹性体、聚六氟丙烯树脂或弹性体、聚偏二氟乙烯、聚氟乙烯、聚氟乙烯丙烯、其混合物等。
当使用所列举的树脂或弹性体时,它们可以与例如马来酸酐等接枝,可以与其他所列举的树脂或弹性体或者用于制备树脂或弹性体的单体共聚,或者可以通过另外的化合物而变性。另外的化合物的实例可以包括羧基封端的丁二烯-丙烯腈共聚物等。
在一个实例中,封装层可以包含上述类型中的基于烯烃的弹性体、基于有机硅的弹性体、或丙烯酸类弹性体等作为封装树脂,但本申请不限于此。
在本申请的一个具体实例中,封装树脂可以为基于烯烃的树脂。在一个实例中,封装树脂可以包含衍生自丁烯的聚合物。衍生自丁烯的聚合物可以意指聚合物的聚合单元中的至少一个衍生自丁烯。由于衍生自丁烯的聚合物具有非常低的极性,是透明的并且几乎不受腐蚀影响,因此当使用该聚合物作为封装材料或密封材料时,可以实现优异的水分阻挡特性和耐久性。
在本申请中,衍生自丁烯的聚合物也可以为:通过使丁烯单体聚合获得的均聚物、通过使丁烯单体与其他可聚合单体共聚获得的共聚物、通过使用丁烯单体获得的反应性低聚物、或其混合物。本申请中的衍生的聚合物可以意指由单体聚合的单元形成的聚合物。丁烯单体可以为例如1-丁烯、2-丁烯或异丁烯。
可以与衍生物聚合的丁烯单体或其他单体可以为例如异戊二烯、苯乙烯、丁二烯等。当使用共聚物时,可以保持诸如可加工性和交联程度的特性,因而可以确保在应用于有机电子器件时压敏粘合剂的固有耐热性。
此外,通过使用丁烯单体获得的反应性低聚物可以包括具有反应性官能团的丁烯聚合物。低聚物的重均分子量可以为500至5000。此外,丁烯聚合物可以与具有反应性官能团的另外的聚合物结合。另外的聚合物可以为(甲基)丙烯酸烷基酯,但本发明不限于此。反应性官能团可以为羟基、羧基、异氰酸酯基或含氮基团。此外,反应性低聚物和另外的聚合物可以通过多官能交联剂交联,并且多官能交联剂可以为选自以下中的一者或更多者:异氰酸酯交联剂、环氧交联剂、氮丙啶交联剂和金属螯合物交联剂。
在封装层中,树脂或弹性体组分的重均分子量(Mw)可以达到使得粘合剂组合物可以形成膜状的程度。例如,树脂或弹性体的重均分子量可以为约100000至2000000、110000至1500000或150000至1000000。本文所使用的术语“重均分子量”是指通过凝胶渗透色谱法(GPC)所测量的相对于标准聚苯乙烯的转换值。然而,树脂或弹性体组分不一定必需具有上述重均分子量。例如,当树脂或弹性体组分的重均分子量没有处于足以形成膜的水平时,可以将单独的粘结剂树脂混合到粘合剂组合物中。
在另一个具体实例中,根据本申请的封装树脂可以是可固化树脂。可以用于本申请的可固化树脂的具体类型没有特别限制,例如可以使用本领域已知的各种可热固化或可光固化树脂。术语“可热固化树脂”是指可以通过适当的热施加或老化过程而固化的树脂。术语“可光固化树脂”是指可以通过电磁波照射而固化的树脂。此外,可固化树脂可以是具有热固化和光固化特性二者的可双固化树脂。
在本申请中,可固化树脂的具体类型没有特别限制,只要树脂具有上述特性即可。例如,可固化树脂可以是可以固化成表现出粘合特性的树脂,其包含一个或更多个可被固化的官能团,例如缩水甘油基、异氰酸酯基、羟基、羧基、酰胺基等;或者一个或更多个可以通过电磁波照射而固化的官能团,例如环氧化物基、环状醚基、硫化物基、缩醛基、内酯基等。此外,如上所述的树脂的具体类型可以包括丙烯酸类树脂、聚酯树脂、异氰酸酯树脂、环氧树脂等,但本发明不限于此。
在本申请中,可以使用芳族或脂族的、或线性或支化的环氧树脂作为可固化树脂。在本申请的一个实施方案中,可以使用含有两个或更多个官能团并且环氧当量为180g/eq至1000g/eq的环氧树脂。当使用环氧当量在上述范围内的环氧树脂时,可以有效地保持固化产物的特性例如粘合性能、玻璃化转变温度等。环氧树脂的实例可以包括以下中的一者或者两者或更多者的混合物:甲酚酚醛清漆环氧树脂、双酚A型环氧树脂、双酚A型酚醛清漆环氧树脂、苯酚酚醛清漆环氧树脂、四官能环氧树脂、联苯型环氧树脂、三酚甲烷型环氧树脂、烷基改性的三酚甲烷环氧树脂、萘型环氧树脂、二环戊二烯型环氧树脂和二环戊二烯改性的酚型环氧树脂。
在本申请中,可以使用分子结构中具有环状结构的环氧树脂作为可固化树脂,并且可以使用包含芳族基团(例如,苯基)的环氧树脂。当环氧树脂包含芳族基团时,固化产物具有优异的热稳定性和化学稳定性,表现出低WVTR,并且因此可以改善有机电子器件中的封装结构的可靠性。可以用于本申请的含芳族基团的环氧树脂的具体实例可以包括以下中的一者或者两者或更多者的混合物:联苯型环氧树脂、二环戊二烯型环氧树脂、萘型环氧树脂、二环戊二烯改性的酚型环氧树脂、基于甲酚的环氧树脂、基于双酚的环氧树脂、基于二甲苯(xylok)的环氧树脂、多官能环氧树脂、苯酚酚醛清漆环氧树脂、三酚甲烷型环氧树脂和烷基改性的三酚甲烷环氧树脂,但本发明不限于此。
此外,根据本申请的封装层可以具有与封装树脂的高相容性,并且可以包含可以与封装树脂形成特定交联结构的可活性能量射线聚合化合物。
例如,根据本申请的封装层可以包含可以通过活性能量射线的照射而与封装树脂聚合的多官能可活性能量射线聚合化合物。可活性能量射线聚合化合物可以指例如这样的化合物:其包含两个或更多个可以通过活性能量射线的照射而参与聚合反应的官能团,例如具有烯键式不饱和双键的官能团如丙烯酰基、甲基丙烯酰基等,以及诸如环氧基、氧杂环丁烷基等的官能团。
作为多官能可活性能量射线聚合化合物,例如,可以使用多官能丙烯酸酯(multifunctional acrylate,MFA)。
此外,相对于100重量份的封装树脂,可活性能量射线聚合化合物可以以5重量份至30重量份、5重量份至25重量份、8重量份至20重量份、10重量份至18重量份或12重量份至18重量份包含在内。本申请提供了即使在上述范围内的高温和高湿下也具有优异可靠性的膜。
可以通过活性能量射线的照射而聚合的多官能可活性能量射线聚合化合物可以为例如1,4-丁二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,8-辛二醇二(甲基)丙烯酸酯、1,12-十二烷二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二(甲基)丙烯酸二环戊基酯、环己烷-1,4-二甲醇二(甲基)丙烯酸酯、三环癸烷二甲醇二(甲基)丙烯酸酯、二羟甲基二环戊烷二(甲基)丙烯酸酯、新戊二醇改性的三甲基丙烷二(甲基)丙烯酸酯、金刚烷二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、或其混合物。
多官能可活性能量射线聚合化合物可以为例如分子量低于1000且包含两个或更多个官能团的化合物。在这种情况下,分子量可以指重均分子量或常规分子量。包含在多官能可活性能量射线聚合化合物中的环状结构可以为碳环结构或杂环结构;或者单环结构或多环结构中的任一者。
在本申请的一个具体实例中,封装层还可以包含单官能丙烯酸酯。在一个实例中,封装树脂和单官能丙烯酸酯可以分别以60重量份至95重量份和5重量份至40重量份的重量比包含在封装层中。在一个实例中,封装树脂和单官能丙烯酸酯可以分别以60重量份至90重量份和10重量份至40重量份或者65重量份至90重量份和10重量份至35重量份的重量比包含在封装层中。在本申请中,当将组分的含量调整在上述范围内时,即使在高温和高湿下也可以实现优异的水分阻挡特性和耐热性。单官能丙烯酸酯没有特别限制,并且可以为丙烯酸正辛酯、丙烯酸异辛酯、丙烯酸异壬酯、丙烯酸月桂酯、丙烯酸硬脂基酯、丙烯酸异硬脂基酯、丙烯酸异癸酯、2-(2-乙氧基乙氧基)乙基丙烯酸酯、甲氧基三乙二醇丙烯酸酯、或甲氧基聚乙二醇丙烯酸酯。
在本申请的一个具体实例中,封装层还可以包含自由基引发剂。自由基引发剂可以为光引发剂或热引发剂。可以考虑固化速率、黄化可能性等来适当地选择光引发剂的具体类型。例如,可以使用基于苯偶姻的光引发剂、基于羟基酮的光引发剂、基于氨基酮的光引发剂或基于氧化膦的光引发剂,并且具体地,可以使用苯偶姻、苯偶姻甲醚、苯偶姻乙醚、苯偶姻异丙醚、苯偶姻正丁醚、苯偶姻异丁醚、苯乙酮、二甲基氨基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基-2-苯基苯乙酮、2-羟基-2-甲基-1-苯基丙-1-酮、1-羟基环己基苯基酮、2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代-丙-1-酮、4-(2-羟基乙氧基)苯基-2-(羟基-2-丙基)酮、二苯甲酮、对苯基二苯甲酮、4,4'-二乙基氨基二苯甲酮、二氯二苯甲酮、2-甲基蒽醌、2-乙基蒽醌、2-叔丁基蒽醌、2-氨基蒽醌、2-甲基噻吨酮、2-乙基噻吨酮、2-氯噻吨酮、2,4-二甲基噻吨酮、2,4-二乙基噻吨酮、苄基二甲基缩酮、苯乙酮二甲基缩酮、对二甲基氨基苯甲酸酯、低聚[2-羟基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮]、2,4,6-三甲基苯甲酰基-二苯基-氧化膦等。
相对于100重量份的可活性能量射线聚合化合物,自由基引发剂可以以0.2重量份至20重量份、0.5重量份至18重量份、1重量份至15重量份、或2重量份至13重量份的重量比包含在内。因此,可以有效引起可活性能量射线聚合化合物的反应并防止由固化后的残留组分引起的压敏粘合剂组合物的特性劣化。
在本申请的一个具体实例中,根据封装树脂的类型,封装膜的封装层还可以包含固化剂。例如,还可以包含可以通过与上述封装树脂反应形成交联结构的固化剂。
可以根据封装树脂或该树脂中包含的官能团的类型来适当地选择和使用固化剂。
在一个实例中,当封装树脂为环氧树脂时,固化剂可以为本领域已知的环氧树脂的固化剂,例如以下中的一者或两者或更多者:胺固化剂、咪唑固化剂、酚固化剂、磷固化剂、酸酐固化剂等,但本发明不限于此。
在一个实例中,作为固化剂,可以使用在室温下为固相并且熔点或分解温度为80℃或更高的咪唑化合物。这样的化合物的实例可以包括例如2-甲基咪唑、2-十七烷基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-氰基乙基-2-苯基咪唑等,但本发明不限于此。
固化剂的含量可以根据复合物的组成(例如封装树脂的类型或比例)来选择。例如,相对于100重量份的封装树脂,固化剂可以以1重量份至20重量份、1重量份至10重量份或1重量份至5重量份的重量比包含在内。然而,重量比可以根据封装树脂或者该树脂的官能团的类型或比率或者待实现的交联密度来改变。
当封装树脂为可以通过活性能量射线的照射而固化的树脂时,可以使用例如阳离子光聚合引发剂作为引发剂。
作为阳离子光聚合引发剂,可以使用基于盐或基于有机金属盐的离子化阳离子引发剂或者基于有机硅烷或基于潜在磺酸的非离子化阳离子光聚合引发剂。基于盐的引发剂的实例可以包括二芳基碘盐、三芳基锍盐、芳基重氮盐等;基于有机金属盐的引发剂的实例可以包括铁-芳烃配合物等;基于有机硅烷的引发剂的实例可以包括邻硝基苄基三芳基甲硅烷基醚、三芳基甲硅烷基过氧化物、酰基硅烷等;并且基于潜在磺酸的引发剂的实例可包括α-磺酰氧基酮、α-羟基甲基苯偶姻磺酸酯等,但本发明不限于此。
在一个实例中,可以使用离子化阳离子光聚合引发剂作为阳离子引发剂。
在一个实例中,封装层还可以包含增粘剂,增粘剂可以优选为基于环状氢化烯烃的聚合物。增粘剂可以为例如通过使石油树脂氢化而获得的氢化石油树脂。氢化石油树脂可以为部分氢化或完全氢化的树脂以及树脂的混合物。这样的增粘剂可以为在增粘剂复合物中具有高相容性、具有优异水分阻挡特性、和少量有机挥发性组分的增粘剂。氢化石油树脂的具体实例可以包括基于氢化萜烯的树脂、基于氢化酯的树脂、基于氢化二环戊二烯的树脂等。增粘剂的重均分子量可以为约200至5000。增粘剂的含量可以根据需要适当地调整。例如,可以考虑以下将描述的凝胶的含量选择增粘剂的含量,例如,相对于100重量份的封装树脂,增粘剂可以以5重量份至100重量份、8重量份至95重量份、10重量份至93重量份或15重量份至90重量份的重量比包含在内。
根据需要,封装层还可以包含吸湿剂。本文所使用的术语“吸湿剂”可以指例如可以通过与水或水分的化学反应除去渗入以下将描述的封装膜的水或水分的材料。
例如,吸湿剂可以以其中吸湿剂均匀分散在封装层中的状态存在。此处,均匀分散状态可以意指其中吸湿剂以相同或基本相同的密度存在于封装层的任何部分的状态。吸湿剂可以为例如金属氧化物、硫酸盐、有机金属氧化物等。具体地,硫酸盐的实例可以包括硫酸镁、硫酸钠、或硫酸镍等,并且有机金属氧化物的实例可以包括铝氧化物辛酸盐等。金属氧化物的具体实例可以包括五氧化二磷(P2O5)、氧化锂(Li2O)、氧化钠(Na2O)、氧化钡(BaO)、氧化钙(CaO)、氧化镁(MgO)等;金属盐的实例可以包括:硫酸盐,例如硫酸锂(Li2SO4)、硫酸钠(Na2SO4)、硫酸钙(CaSO4)、硫酸镁(MgSO4)、硫酸钴(CoSO4)、硫酸镓(Ga2(SO4)3)、硫酸钛(Ti(SO4)2)、硫酸镍(NiSO4)等;金属卤化物,例如氯化钙(CaCl2)、氯化镁(MgCl2)、氯化锶(SrCl2)、氯化钇(YCl3)、氯化铜(CuCl2)、氟化铯(CsF)、氟化钽(TaF5)、氟化铌(NbF5)、溴化锂(LiBr)、溴化钙(CaBr2)、溴化铈(CeBr3)、溴化硒(SeBr4)、溴化钒(VBr3)、溴化镁(MgBr2)、碘化钡(BaI2)、碘化镁(MgI2)等;以及金属氯酸盐,例如高氯酸钡(Ba(ClO4)2)、高氯酸镁(Mg(ClO4)2)等,但本发明不限于此。作为可以包含在封装层中的吸湿剂,可以使用其一者或两者或更多者。在一个实例中,当使用其两者或更多者作为吸湿剂时,可以使用煅烧白云石等。
这样的吸湿剂的尺寸可以根据用途适当地调整。在一个实例中,可以将吸湿剂的平均粒径调整至约10nm至15000nm。具有平均颗粒尺寸在上述范围内的吸湿剂不会与水分迅速反应,使得吸湿剂可以容易地储存,并且可以有效地除去水分而不损坏待封装的元件。
吸湿剂的含量没有特别限制,并且可以考虑期望的阻挡特性而适当地选择。
根据需要,封装层还可以包含水分阻滞剂(moisture blocker)。本文所使用的术语“水分阻滞剂”可以指与水分几乎没有或没有反应、但阻挡或阻碍水或水分在膜中的移动的材料。作为水分阻滞剂,例如,可以使用以下中的一者或两者或更多者:粘土、滑石、针状二氧化硅、板状二氧化硅、多孔二氧化硅、沸石、二氧化钛或氧化锆。此外,水分阻滞剂的表面可以经有机改性剂等处理以促进有机材料的渗透。作为这样的有机改性剂,可以使用例如二甲基苄基氢化牛脂季铵、二甲基二氢化牛脂季铵、甲基牛脂双-2-羟基乙基季铵、二甲基氢化牛脂2-乙基己基季铵、二甲基脱氢牛脂季铵、其混合物等。
水分阻滞剂的含量没有特别限制,并且可以考虑期望的阻挡特性而适当地选择。
除了上述成分之外,根据以下将描述的封装膜的用途和制造方法,封装层还可以包含各种添加剂。例如,根据期望的特性,封装层可以以适当的含量包含可固化材料、交联剂、填料等。
在本发明的一个具体实例中,封装层可以形成为具有如上所述的单层结构或者双层或更多层结构。在本发明的一个具体实例中,除了上述树脂之外,第一层或第二层还可以包含其他组成,例如,上述可活性能量射线聚合化合物、热固性化合物、自由基引发剂、增粘剂、吸湿剂、水分阻滞剂、分散剂、硅烷化合物等,并且第一层和第二层的成分可彼此相同或不同。同时,鉴于将封装膜应用于有机电子元件,可以考虑对元件的损坏等来调整吸湿剂的含量。例如,在与元件接触的层中可以包含少量吸湿剂或者可以不包含吸湿剂。在一个实例中,相对于包含在封装膜中的吸湿剂的总质量,与有机电子元件接触的第一层或第二层可以包含0%至20%的吸湿剂。此外,相对于包含在封装膜中的吸湿剂的总质量,不与有机电子元件接触的第二层或第一层可以包含80%至100%的吸湿剂。
第一层和第二层的层合顺序没有特别限制,并且可以将第二层形成在第一层上或者反过来进行。此外,封装层可以由三个或更多个层构成。例如,第一层可以由两个或更多个层构成,或者第二层可以由两个或更多个层构成。在一个实例中,第二层可以存在于上述金属层的一个表面处,并且第一层可以封装有机电子元件的整个表面。
包含在根据本申请的封装膜中的封装层(b)的厚度没有特别限制,并且可以考虑膜的应用根据以下条件适当地选择。封装层的厚度可以为5μm至200μm、5μm至100μm、10μm至80μm或20μm至70μm。在本申请中,将封装层的厚度调整至5μm或更大,因此可以实现足够的粘合性和物理保护特性;并且将封装层的厚度调整至200μm或更小,因此可以确保可加工性并防止由水分反应性引起的大厚度膨胀而导致的对有机发光二极管的沉积膜的损坏。
如图2所示,在一个实例中,根据本申请的封装膜还可以包括设置在金属层(11)的第二表面(112)上的保护层(14)。构成保护层(14)的材料没有特别限制,例如可以选自聚对苯二甲酸乙二醇酯、聚四氟乙烯、聚乙烯、聚丙烯、聚丁烯、聚丁二烯、氯乙烯共聚物、聚氨酯、乙烯-乙酸乙烯酯、乙烯/丙烯共聚物、乙烯/丙烯酸乙酯共聚物、乙烯/丙烯酸甲酯共聚物、聚酰亚胺、尼龙、基于苯乙烯的树脂或弹性体、基于聚烯烃的树脂或弹性体、其他弹性体、基于聚氧化烯的树脂或弹性体、基于聚酯的树脂或弹性体、基于聚氯乙烯的树脂或弹性体、基于聚碳酸酯的树脂或弹性体、基于聚苯硫醚的树脂或弹性体、烃的混合物、基于聚酰胺的树脂或弹性体、基于丙烯酸酯的树脂或弹性体、基于环氧化合物的树脂或弹性体、基于有机硅的树脂或弹性体、液晶聚合物及其组合,但本发明不限于此。
如图2所示,在一个实例中,根据本申请的封装膜还可以包括在金属层(11)与保护层(14)之间的粘合层(13)。粘合层(13)用于将保护层(14)附接至金属层(11),并且其材料没有特别限制,例如,可以与上述封装层的材料相同或不同。
此外,本申请涉及制造上述封装膜的方法。制造封装膜的示例性方法可以包括切割封装层的侧面。另外,该制造方法可以包括切割金属层的侧面。切割封装层的侧面和切割金属层的侧面的顺序没有特别限制,例如可以切割封装层的侧面然后可以切割金属层的侧面。切割可以意指使封装层或金属层形成期望的形状,例如多边形形状或圆形形状。
制造膜的方法可以包括在上述切割之前形成膜或片形式的封装层。在一个实例中,该方法可以包括将包含上述构成封装层的组分的涂覆溶液以片或膜的形式施加至基底或离型膜上,并干燥所施加的涂覆溶液。
此外,制造方法可以包括形成金属层。金属层可以由金属箔形成或者可以通过在基底上沉积金属来形成。例如,可以通过电解或轧制来制备金属层。制造方法还可以包括在封装层的一个表面上形成金属层。
在本申请中,可以使用CO2激光或光纤激光进行封装层侧面的切割。此外,在一个实例中,可以使用CO2激光、光纤激光或刀式切割机进行金属层侧面的切割。在一个实例中,可以通过这样的方法进行切割:在通过激光确保封装层的间隙或倾斜部分之后,使用刀式切割机切割金属层。例如,可以通过采用合适的方式例如木制切割机、尖刀、切割刀、超级切割机等来进行切割。在本申请的一个具体实例中,切割表面可以为切割之后的封装层或金属层的侧面。此外,在一个实例中,可以通过激光使封装层的与激光接触的切割表面或侧面固化。因此,切割封装层和在封装层的侧面处形成固化部分可以在一个过程(例如激光过程)中进行。
具体地,可以使用尺寸为30μm至1000μm、50μm至900μm、60μm至800μm、70μm至500μm、80μm至300μm、100μm至280μm或110μm至260μm的激光束进行封装层侧面的切割。在本申请中,可以根据侧面处的固化部分的宽度适当调整激光束的尺寸。
此外,可以例如根据激光的输出和/或重复率调整封装层侧面的切割。在一个实例中,可以将激光的输出调整至约100W至250W、120W至240W或180W至220W。此外,可以使用切割速率为200mm/秒至1500mm/秒、330mm/秒至1200mm/秒、520mm/秒至1100mm/秒或630mm/秒至910mm/秒的激光束进行封装层侧面的切割。在本申请中,通过将激光的输出或切割速率调整在上述范围内,可以在同时进行封装层侧面的形成和切割的同时以期望的形式制备间隙、固化部分或倾斜部分。
在本申请的一个具体实例中,可以使用尺寸为1μm至30μm的激光束进行金属层侧面的切割。此外,可以使用输出为70W至150W、80W至130W或90W至110W的激光束进行激光切割。此外,可以使用切割速率为200mm/秒至1500mm/秒、330mm/秒至1200mm/秒、520mm/秒至1100mm/秒或630mm/秒至910mm/秒的激光束进行激光切割。在本申请中,通过将激光的输出或切割速率调整在上述范围内,可以在同时进行金属层侧面的形成和切割的同时调整突出部并以期望的形式制备间隙。
此外,本申请涉及有机电子器件。如图3所示,有机电子器件可以包括基底(2);形成在该基底(2)上的有机电子元件(21);以及被配置为封装有机电子元件(21)的整个表面(例如上表面和侧表面二者)的封装膜(1)。封装膜(1)可以包括包含呈交联状态的压敏粘合剂组合物或粘合剂组合物的封装层(12)。此外,可以形成有机电子器件使得封装层与有机电子元件的整个表面接触。此外,封装层(12)可以形成为具有如上所述的双层结构。此处,双层结构可以由第一层(121和122)或第二层(121和122)构成,或者由第一层(122)和第二层(121)构成。
有机电子元件可以为例如有机发光二极管。
此外,本发明涉及制造有机电子器件的方法。可以例如通过使用封装膜来制造有机电子器件。
封装层在有机电子器件中表现出优异的水分阻挡特性和光学特性,并且可以形成为有效地固定并支承基底和金属层的封装层。
此外,无论有机电子器件的类型(例如顶部发射型、底部发射型等)如何,都可以稳定地形成封装层。
本文所使用的术语“封装层”可以指覆盖有机电子元件的上表面和侧表面二者的压敏粘合剂或粘合剂。
有机电子器件的制造方法可以包括,例如将封装膜施加至其上形成有有机电子元件的基底以覆盖该有机电子元件;以及使该封装膜固化。封装膜的固化是指使封装层固化。
本文所使用的术语“固化”可以意指通过加热或UV照射过程使根据本发明的压敏粘合剂组合物形成交联结构以制备压敏粘合剂。或者,该术语可以意指将粘合剂组合物制备成粘合剂的形式。
具体地,通过真空沉积或溅射等在用作基底的玻璃或聚合物膜上形成透明电极,在透明电极上形成由例如空穴传输层、发光层、电子传输层等构成的发光有机材料层,然后在其上进一步形成电极层以形成有机电子元件。随后,将经受上述过程的基底上的有机电子元件的整个表面设置成被封装膜的封装层覆盖。
有益效果
本申请提供了这样的封装膜:其可以形成为具有可以有效阻挡水分或氧从外部流入有机电子器件的结构,具有优异的处理特性和可加工性,并且还具有优异的与有机电子元件的结合特性和耐久性。
附图说明
图1和图2示出了根据本发明的实例的封装膜的截面图;并且
图3示出了根据本发明的实例的有机电子器件的截面图。
附图标记列表
1:封装膜
11:金属层
111:第一表面
112:第二表面
12:封装层
121:封装层的第一层或第二层
122:封装层的第一层或第二层
a:间隙的尺寸(宽度)
b:封装层的厚度
c:固化部分的尺寸(宽度)
d:倾斜部分的尺寸(宽度)
e:突出部的尺寸
13:粘合层
14:保护层
2:基底
21:有机电子元件
具体实施方式
下文中,将参照实施例和比较例更详细地描述上述内容。然而,本申请不限于以下实施例。
实施例1
(1)封装层的第二层溶液的制备
在室温下将60g聚异丁烯树脂(重均分子量为450000)和40g作为增粘剂的基于氢化二环戊二烯的树脂(软化温度为125℃)添加至反应器中,然后向其中添加20g多官能丙烯酸类单体(TMPTA)和1g光引发剂,并用甲苯进行稀释,使得所得溶液的固体含量为约25重量%。
(2)封装层的第二层溶液的制备
将100g作为吸湿剂的煅烧白云石和作为溶剂的甲苯以50重量%的固体浓度混合以制备吸湿剂溶液。在室温下将70g聚异丁烯树脂(重均分子量为450000)和30g作为增粘剂的基于氢化二环戊二烯的树脂(软化温度为125℃)添加至反应器中,然后向其中添加30g多官能丙烯酸类单体(TMPTA)和2g光引发剂,并用甲苯进行稀释,使得所得溶液的固体含量为约25重量%。将预先制备的吸湿剂溶液与所得溶液混合并均匀化。
(3)封装层的制备
将步骤(1)中制备的第二层溶液施加在离型PET的离型表面上,并在110℃下干燥10分钟以形成厚度为10μm的层。
将步骤(2)中制备的第二层溶液施加在离型PET的离型表面上,并在130℃下干燥3分钟以形成厚度为30μm的层。
将这两个层层合以制造多层膜。
(4)封装膜的制造
将如此制备的封装层的经剥离处理的PET分离,并将所得封装层层合使得由步骤(2)中制备的第二层溶液形成的第二层与预先制备的金属层(不胀钢)的表面接触。
在改变CO2激光(E-400i,Coherent)和光纤激光(YLR-300-AC-Y11)的条件(束尺寸、输出、波长、速度、重复率等)的同时,制造层合的金属集成封装膜,使得间隙(a)的尺寸为25μm并且倾斜部分(d)的宽度为5μm。
实施例2
以与实施例1的步骤(2)中相同的方式制备第二层溶液,不同之处在于添加60g聚异丁烯树脂、40g增粘剂、20g多官能丙烯酸类单体和1g光引发剂。
以与实施例1中相同的方式制造封装膜,不同之处在于由步骤(2)中制备的第二层溶液形成的第二层的厚度为50μm,间隙(a)的尺寸为180μm,并且倾斜部分(d)的宽度为60μm。
实施例3
以与实施例1中相同的方式制备各层溶液,不同之处在于通过以下方法制备第一层溶液来代替实施例1的步骤(1)中制备的第二层溶液。
制备这样的溶液(70%固体含量)然后使其均匀化:其中用甲基乙基酮稀释50g环氧树脂(KSR 177,Kukdo Chemical Co.,Ltd)、50g环氧树脂(YD-014,Kukdo Chemical Co.,Ltd)和50g苯氧基树脂(YP-55,Tohto Kasei Co.,Ltd)。将3g咪唑(固化剂,ShikokuChemicals Corporation)添加至经均匀化的溶液中,然后以高速搅拌1小时以制备第一层溶液。
以与实施例1中相同的方式制造封装膜,不同之处在于:使如此制备的第一层溶液形成厚度为20μm的层,由实施例1的步骤(2)中制备的第二层溶液形成厚度为30μm的层,间隙(a)的尺寸为600μm,并且倾斜部分(d)的宽度为400μm。
实施例4
(1)封装层的第一层溶液的制备
以与实施例3中相同的方式制备第一层溶液。
(2)封装层的第一层溶液的制备
将100g作为吸湿剂的煅烧白云石和作为溶剂的甲基乙基酮以50重量%的固体浓度混合以制备吸湿剂溶液。制备这样的溶液(70%固体含量)然后使其均匀化:其中在室温下在反应器中用甲基乙基酮稀释50g环氧树脂(KSR 177,Kukdo Chemical Co.,Ltd)、50g环氧树脂(YD-014,Kukdo Chemical Co.,Ltd)和50g苯氧基树脂(YP-55,Tohto Kasei Co.,Ltd)。将3g咪唑(固化剂,Shikoku Chemicals Corporation)添加至经均匀化的溶液中,然后以高速搅拌1小时以制备第一层溶液。将预先制备的吸湿剂溶液与所得溶液混合并进行均匀化。
以与实施例1中相同的方式制造封装膜,不同之处在于:由步骤(1)中制备的第一层溶液形成厚度为20μm的层,由步骤(2)中制备的第一层溶液形成厚度为30μm的层,间隙(a)的尺寸为900μm,并且倾斜部分(d)的宽度为800μm。
比较例1
以与实施例1中相同的方式制造封装膜,不同之处在于间隙(a)的尺寸为4μm并且倾斜部分(d)的宽度为1μm。
比较例2
以与实施例3中相同的方式制造封装膜,不同之处在于在制造封装膜时间隙(a)的尺寸为15μm并且倾斜部分(d)的宽度为5μm。
比较例3
(1)封装层的第一层溶液的制备
将100g作为吸湿剂的煅烧白云石和作为溶剂的甲基乙基酮以50重量%的固体浓度混合以制备吸湿剂溶液。制备这样的溶液(70%固体含量)然后使其均匀化:其中在室温下在反应器中用甲基乙基酮稀释80g环氧树脂(KSR 177,Kukdo Chemical Co.,Ltd)、4g环氧树脂(YD-014,Kukdo Chemical Co.,Ltd)和30g苯氧基树脂(PKHA,Gabriel Phenoxies,Inc)。将3g咪唑(固化剂,Shikoku Chemicals Corporation)添加至经均匀化的溶液中,然后以高速搅拌1小时以制备第一层溶液。将预先制备的吸湿剂溶液与所得溶液混合并进行均匀化。
将第一层溶液施加在离型PET的离型表面上,并在130℃下干燥7分钟以形成厚度为50μm的第一层。
此外,间隙(a)为18μm并且倾斜部分(d)的宽度为10μm。
以与实施例1中相同的方式制造封装膜,不同之处在于封装层由单层的第一层形成。
比较例4
以与实施例4中相同的方式制造封装膜,不同之处在于在制造封装膜时间隙(a)的尺寸为1100μm并且倾斜部分(d)的宽度为100μm。
比较例5
以与实施例3中相同的方式制造封装膜,不同之处在于在制造封装膜时间隙(a)的尺寸为1200μm并且倾斜部分(d)的宽度为1100μm。
实验例1-结合和固化时的污染
将有机电子元件沉积在玻璃基底上,使用真空结合机在50℃、50毫托真空度和0.4MPa的条件下将实施例和比较例中制造的封装膜结合在该元件上,然后在100℃下进行固化过程3小时以制造有机电子面板。确定是否因封装层从金属层端部边缘溢流至外部而发生污染。
实验例2-门尼粘度的测量
通过可商购自TA仪器的ARES测量实施例和比较例中制备的封装层的门尼粘度。使用直径为8mm的板式夹具在5%应变、1Hz频率和100℃温度的条件下根据剪应力测量门尼粘度。
表1
封装层的间隙(a) | 倾斜部分的宽度(d) | 粘度(Pa·s) | 侧面处的污染 | |
实施例1 | 25μm | 5μm | 10<sup>5</sup> | X |
实施例2 | 180μm | 60μm | 2×10<sup>4</sup> | X |
实施例3 | 600μm | 400μm | 4×10<sup>3</sup> | X |
实施例4 | 900μm | 800μm | 5×10<sup>2</sup> | X |
比较例1 | 4μm | 1μm | 10<sup>5</sup> | O |
比较例2 | 15μm | 5μm | 4×10<sup>3</sup> | O |
比较例3 | 18μm | 10μm | 1.5×10 | O |
比较例4 | 1100μm | 100μm | 5×10<sup>2</sup> | X(电极短路) |
比较例5 | 1200μm | 1100μm | 4×10<sup>3</sup> | X(电极短路) |
可以看出,在比较例4和比较例5的情况下,间隙的尺寸或倾斜部分的宽度显著大并且因此没有发生侧面处的污染,但金属层的边缘与有机电子元件的电极接触,或者外来物质落在封装层的边缘,并因此发生电极短路。
Claims (20)
1.一种用于有机电子元件的封装膜,包括:
金属层,所述金属层具有第一表面和与所述第一表面相对的第二表面;以及
封装层,所述封装层设置在所述第一表面上、位于所述第一表面的边缘内侧,使得在所述封装层的一些区域的边缘与所述第一表面的边缘之间形成尺寸为20μm至1000μm的间隙,并且所述封装层在其一些区域的边缘处具有倾斜部分。
2.根据权利要求1所述的封装膜,其中所述倾斜部分的宽度(d)范围为2μm至1000μm。
3.根据权利要求1所述的封装膜,其中所述封装层的门尼粘度(η*)范围为2.0×10Pa·s至108Pa·s,所述门尼粘度是在5%应变、1Hz频率和100℃温度的条件下根据剪应力测量的。
4.根据权利要求1所述的封装膜,其中所述封装层在其一些区域的边缘处具有固化部分。
5.根据权利要求4所述的封装膜,其中所述固化部分的宽度范围为10μm至1100μm。
6.根据权利要求1所述的封装膜,其中所述金属层包含以下中的任一者:金属、金属氧化物、金属氮化物、金属碳化物、金属氮氧化物、金属硼氧化物、及其混合物。
7.根据权利要求1所述的封装膜,其中所述金属层包含以下中的任一者:铁、铝、铜、镍、硅氧化物、铝氧化物、钛氧化物、铟氧化物、锡氧化物、铟锡氧化物、钽氧化物、锆氧化物、铌氧化物、及其混合物。
8.根据权利要求1所述的封装膜,还包括设置在所述金属层的所述第二表面上的保护层和设置在所述金属层与所述保护层之间的粘合层。
9.根据权利要求1所述的封装膜,其中所述封装层由单层或者两个或更多个层形成。
10.根据权利要求1所述的封装膜,其中所述封装层包括第一层,所述第一层包含玻璃化转变温度为85℃或更高的封装树脂。
11.根据权利要求1所述的封装膜,其中所述封装层包括第二层,所述第二层包含玻璃化转变温度为0℃或更低的封装树脂。
12.根据权利要求1所述的封装膜,其中所述封装层包含吸湿剂。
13.一种制造根据权利要求1所述的封装膜的方法,包括切割封装层的侧面。
14.根据权利要求13所述的方法,包括切割金属层的侧面。
15.根据权利要求13所述的方法,其中所述切割封装层的侧面是使用CO2激光或光纤激光进行的。
16.根据权利要求14所述的方法,其中所述切割金属层的侧面是使用CO2激光、光纤激光或刀式切割机进行的。
17.根据权利要求13所述的方法,其中所述切割封装层的侧面是使用尺寸为50μm至500μm的激光束进行的。
18.根据权利要求14所述的方法,其中所述切割金属层的侧面是使用尺寸为1μm至30μm的激光束进行的。
19.一种有机电子器件,包括基底、形成在所述基底上的有机电子元件、以及被配置为封装所述有机电子元件的整个表面的根据权利要求1所述的封装膜。
20.一种制造有机电子器件的方法,包括:
将根据权利要求1所述的封装膜施加至其上形成有有机电子元件的基底以覆盖所述有机电子元件;以及
使所述封装膜固化。
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WO2017179907A1 (ko) | 2017-10-19 |
CN109153216A (zh) | 2019-01-04 |
US10593908B2 (en) | 2020-03-17 |
KR101888351B1 (ko) | 2018-08-14 |
WO2017179906A1 (ko) | 2017-10-19 |
TWI650236B (zh) | 2019-02-11 |
TWI632703B (zh) | 2018-08-11 |
TW201808602A (zh) | 2018-03-16 |
TW201804635A (zh) | 2018-02-01 |
US20190157612A1 (en) | 2019-05-23 |
JP6671537B2 (ja) | 2020-03-25 |
CN109155373B (zh) | 2021-02-02 |
JP6783873B2 (ja) | 2020-11-11 |
JP2019514175A (ja) | 2019-05-30 |
KR20170116987A (ko) | 2017-10-20 |
US20190115562A1 (en) | 2019-04-18 |
US10937990B2 (en) | 2021-03-02 |
JP2019517121A (ja) | 2019-06-20 |
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CN109153216B (zh) | 2021-03-16 |
KR20170116986A (ko) | 2017-10-20 |
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