TWI618723B - 用於有機電子裝置之閘極絕緣層 - Google Patents

用於有機電子裝置之閘極絕緣層 Download PDF

Info

Publication number
TWI618723B
TWI618723B TW100131548A TW100131548A TWI618723B TW I618723 B TWI618723 B TW I618723B TW 100131548 A TW100131548 A TW 100131548A TW 100131548 A TW100131548 A TW 100131548A TW I618723 B TWI618723 B TW I618723B
Authority
TW
Taiwan
Prior art keywords
group
insulating layer
gate insulating
polymer
layer
Prior art date
Application number
TW100131548A
Other languages
English (en)
Chinese (zh)
Other versions
TW201219432A (en
Inventor
大衛 克里斯多夫 穆勒
托比 柯爾
保威爾 米斯基威克
歐羅姿可 米格爾 卡拉司喀
安德魯 貝爾
艾德蒙 艾爾斯
賴瑞Ｆ 羅道斯
藤田一義
亨卓 恩格
普拉莫德 卡丹那拉克奇
史蒂芬 史密斯
Original Assignee
馬克專利公司
普洛梅魯斯有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 馬克專利公司, 普洛梅魯斯有限公司 filed Critical 馬克專利公司
Publication of TW201219432A publication Critical patent/TW201219432A/zh
Application granted granted Critical
Publication of TWI618723B publication Critical patent/TWI618723B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/02—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F32/04—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having one carbon-to-carbon double bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L45/00—Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
TW100131548A 2010-09-02 2011-09-01 用於有機電子裝置之閘極絕緣層 TWI618723B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
??10009118.0 2010-09-02
EP10009118 2010-09-02
US37979910P 2010-09-03 2010-09-03
US61/379,799 2010-09-03

Publications (2)

Publication Number Publication Date
TW201219432A TW201219432A (en) 2012-05-16
TWI618723B true TWI618723B (zh) 2018-03-21

Family

ID=44534260

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100131548A TWI618723B (zh) 2010-09-02 2011-09-01 用於有機電子裝置之閘極絕緣層

Country Status (11)

Country Link
US (2) US9175123B2 (OSRAM)
EP (2) EP2611841B1 (OSRAM)
JP (2) JP6097216B2 (OSRAM)
KR (1) KR101842735B1 (OSRAM)
CN (3) CN103261250B (OSRAM)
DE (1) DE112011102917T5 (OSRAM)
GB (1) GB2497451A (OSRAM)
RU (1) RU2013114414A (OSRAM)
SG (1) SG187955A1 (OSRAM)
TW (1) TWI618723B (OSRAM)
WO (1) WO2012028279A1 (OSRAM)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5886189B2 (ja) * 2009-05-25 2016-03-16 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 架橋可能な誘電体、並びにその製造方法及び使用方法
CN103097420B (zh) 2010-09-02 2016-06-22 默克专利股份有限公司 用于电子器件的夹层
KR101842735B1 (ko) * 2010-09-02 2018-03-27 메르크 파텐트 게엠베하 전자 디바이스용 게이트 절연체 층
US9082981B1 (en) 2012-01-16 2015-07-14 Polyera Corporation Curable polymeric materials and related electronic devices
EP2814855B1 (en) * 2012-02-15 2017-07-26 Merck Patent GmbH Planarization layer for organic electronic devices
RU2014147079A (ru) * 2012-04-25 2016-06-20 Мерк Патент Гмбх Блочные структуры для органических электронных устройств
US9171961B2 (en) * 2012-07-11 2015-10-27 Polyera Corporation Coating materials for oxide thin film transistors
US9450187B2 (en) * 2012-09-04 2016-09-20 Merck Patent Gmbh Process of surface modification of dielectric structures in organic electronic devices to increase surface energy
KR102112890B1 (ko) 2012-09-21 2020-05-19 메르크 파텐트 게엠베하 유기 반도체 제제
KR101572049B1 (ko) 2012-09-25 2015-11-26 프로메러스, 엘엘씨 사이클로올레핀성 중합체를 함유하는 말레이미드 및 그의 용도
CN104781945B (zh) * 2012-11-08 2019-09-03 默克专利股份有限公司 制造具有堤结构的有机电子器件的方法，堤结构以及用其所制得的电子器件
US9035287B2 (en) * 2013-02-01 2015-05-19 Polyera Corporation Polymeric materials for use in metal-oxide-semiconductor field-effect transistors
KR101961985B1 (ko) * 2013-06-27 2019-03-25 바스프 에스이 유전체로서의 복분해 중합체
US9356248B2 (en) * 2013-08-16 2016-05-31 Palo Alto Research Center Incorporated Organic thin-film transistor
KR101718941B1 (ko) 2013-09-30 2017-03-22 주식회사 엘지화학 광반응기를 갖는 고리형 올레핀 화합물 및 광반응성 중합체
EP3117469B1 (en) * 2014-03-12 2018-01-31 Merck Patent GmbH Organic electronic compositions and device thereof
JP6118287B2 (ja) * 2014-03-26 2017-04-19 富士フイルム株式会社 半導体素子及び半導体素子の絶縁層形成用組成物
EP3142160A4 (en) * 2014-05-08 2017-05-24 Fujifilm Corporation Semiconductor element and insulating layer-forming composition
TWI659046B (zh) 2015-05-06 2019-05-11 Sumitomo Bakelite Co., Ltd. 作爲永久介電材料的順丁烯二醯亞胺及環烯烴單體之聚合物
US10147895B2 (en) 2015-07-13 2018-12-04 Flexterra, Inc. Curable polymeric materials and their use for fabricating electronic devices
WO2017038620A1 (ja) * 2015-08-31 2017-03-09 日本ゼオン株式会社 樹脂組成物
DE102015119939A1 (de) 2015-11-18 2017-05-18 ALTANA Aktiengesellschaft Vernetzbare polymere Materialien für dielektrische Schichten in elektronischen Bauteilen
JP6770071B2 (ja) 2015-11-30 2020-10-14 プロメラス， エルエルシー 光酸発生剤及び塩基を含有する永久誘電体組成物
KR102465353B1 (ko) 2015-12-02 2022-11-10 삼성전자주식회사 전계 효과 트랜지스터 및 이를 포함하는 반도체 소자
WO2017140404A1 (en) * 2016-02-17 2017-08-24 Merck Patent Gmbh Formulation of an organic functional material
WO2017165478A1 (en) 2016-03-22 2017-09-28 Promerus, Llc Diazirine containing organic electronic compositions and device thereof
CN109196676B (zh) * 2016-05-18 2023-07-28 默克专利股份有限公司 有机介电层及有机电子器件
TWI732994B (zh) * 2017-02-09 2021-07-11 日商住友電木股份有限公司 光配向膜形成用組成物及由其衍生之ｌｃｄ器件
WO2019130336A1 (en) * 2017-12-27 2019-07-04 Indian Institute Of Technology, Guwahati Method for the fabrication of solution process, ultra-low operating voltage, stable organic field effect transistor
WO2019130337A1 (en) * 2017-12-27 2019-07-04 Indian Institute Of Technology, Guwahati Method for the fabrication of ultralow voltage operated, reduced bias stress, multi-layer dielectric system comprising n-type organic field effect transistors
EP3740523B1 (en) 2018-01-19 2024-07-31 Flexterra, Inc. Organic dielectric materials and devices including them
KR20210028205A (ko) 2018-06-28 2021-03-11 메르크 파텐트 게엠베하 전자 디바이스의 제조 방법
TWI794520B (zh) * 2018-06-29 2023-03-01 日商住友電木股份有限公司 作為 3d 列印材料之聚環烯烴單體及由能夠產生光酸之化合物活化之催化劑
US11059938B2 (en) 2018-10-05 2021-07-13 Industrial Technology Research Institute Film composition and a film prepared thereby
CN109698276A (zh) * 2018-12-27 2019-04-30 广州天极电子科技有限公司 一种薄膜晶体管器件及其制备方法
WO2020165270A1 (en) 2019-02-12 2020-08-20 The University Of Southampton Device comprising piezoelectrically active layer and method for producing such device
TW202100575A (zh) 2019-05-31 2021-01-01 美商普羅梅勒斯有限公司 作為光學或3d印刷材料的快速可光固化的多環烯烴組成物
CN111848930B (zh) * 2020-07-30 2021-07-13 清华大学 可溶性聚苯并呋喃及其制备方法与在合成5-取代苯并呋喃的应用
JP7547899B2 (ja) 2020-09-28 2024-09-10 住友ベークライト株式会社 ワニスおよび樹脂膜
KR102476024B1 (ko) * 2021-01-19 2022-12-08 한국화학연구원 유기절연체 형성용 조성물 및 이를 포함하는 유기 절연체 및 박막 트랜지스터
DE102021125407A1 (de) 2021-09-30 2023-03-30 Polymer Competence Center Leoben Gmbh Verfahren zur Herstellung eines Dielektrikums für einen Kondensator und Verfahren zur Herstellung eines Kondensators und Kondensator
CN114316215B (zh) * 2022-01-27 2023-07-04 安徽建筑大学 一种自交联成炭本征阻燃聚双环戊二烯工程材料及其制备方法
JP2023116922A (ja) * 2022-02-10 2023-08-23 住友ベークライト株式会社 ポリノルボルネンの製造方法、ポリノルボルネン含有溶液、ポリノルボルネン粉末、感光性樹脂組成物、および半導体装置
TW202334271A (zh) * 2022-02-18 2023-09-01 美商普羅梅勒斯有限公司 Romp本體聚合及陽離子聚合型組成物用雙觸媒體系
CN116217805B (zh) * 2023-01-07 2024-08-02 中北大学 一种降冰片烯基三铵类阳离子聚合物及其制备方法和应用
TW202530282A (zh) * 2023-09-11 2025-08-01 美商普羅梅勒斯有限公司 微流體裝置用多環烯烴聚合物製ｕｖ－奈米壓印微影裝置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200603338A (en) * 2004-02-13 2006-01-16 Promerus Llc Polymers of polycyclic olefins having a polyhedral oligosilsesquioxane pendant group and uses thereof
CN101669225A (zh) * 2007-04-25 2010-03-10 默克专利股份有限公司 电子器件的制备方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1278780A (en) 1968-12-24 1972-06-21 Agfa Gevaert Photodimerisation and photopolymerisation of bis-maleimides
US4565873A (en) 1978-08-30 1986-01-21 Ciba-Geigy Corporation Silanes containing imide groups
US5468819A (en) 1993-11-16 1995-11-21 The B.F. Goodrich Company Process for making polymers containing a norbornene repeating unit by addition polymerization using an organo (nickel or palladium) complex
US5789757A (en) 1996-09-10 1998-08-04 The Dexter Corporation Malemide containing formulations and uses therefor
US5861235A (en) 1996-06-26 1999-01-19 Dow Corning Asia, Ltd. Ultraviolet-curable composition and method for patterning the cured product therefrom
US6890847B1 (en) 2000-02-22 2005-05-10 Micron Technology, Inc. Polynorbornene foam insulation for integrated circuits
JP2004505308A (ja) 2000-07-28 2004-02-19 グッドリッチ　コーポレイション 光学導波管及びその製造法
US6423780B1 (en) * 2001-02-07 2002-07-23 Loctite Heterobifunctional monomers and uses therefor
US6690029B1 (en) 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
EP2207217A1 (en) 2001-12-19 2010-07-14 Merck Patent GmbH Organic field effect transistor with an organic dielectric
GB0130321D0 (en) * 2001-12-19 2002-02-06 Avecia Ltd Electronic devices
US20060020068A1 (en) 2004-07-07 2006-01-26 Edmund Elce Photosensitive compositions based on polycyclic polymers for low stress, high temperature films
US7674847B2 (en) 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
WO2005007676A2 (en) 2003-07-10 2005-01-27 Rajadhyaksha V J Glycopeptides for the treatment of als and other metabolic and autoimmune disorders
JP5089986B2 (ja) 2003-11-28 2012-12-05 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 有機半導体層およびその改善
US7378456B2 (en) * 2004-01-30 2008-05-27 Promerus Llc Directly photodefinable polymer compositions and methods thereof
US7385221B1 (en) 2005-03-08 2008-06-10 University Of Kentucky Research Foundation Silylethynylated heteroacenes and electronic devices made therewith
JP2007150246A (ja) 2005-11-02 2007-06-14 Ricoh Co Ltd 有機トランジスタ及び表示装置
JP2007251093A (ja) * 2006-03-20 2007-09-27 Nippon Zeon Co Ltd ゲート絶縁膜、有機薄膜トランジスタ、該トランジスタの製造方法及び表示装置
JP2008130910A (ja) * 2006-11-22 2008-06-05 Nippon Zeon Co Ltd 有機薄膜トランジスタ
US8053515B2 (en) * 2006-12-06 2011-11-08 Promerus Llc Directly photodefinable polymer compositions and methods thereof
CN101622289A (zh) * 2006-12-06 2010-01-06 普罗米鲁斯有限责任公司 可直接光限定的聚合物组合物及其方法
TWI332284B (en) 2006-12-29 2010-10-21 Ind Tech Res Inst A battery electrode paste composition containing modified maleimides
JP4872735B2 (ja) * 2007-03-19 2012-02-08 住友ベークライト株式会社 マレイミド基含有ポリノルボルネンを用いた新規光導波路
JP2008244362A (ja) * 2007-03-28 2008-10-09 Seiko Epson Corp 半導体装置の製造方法、半導体装置、半導体回路、電気光学装置および電子機器
US8309952B2 (en) * 2007-08-28 2012-11-13 Toppan Printing Co., Ltd. Thin film transistor and method for manufacturing the same
EP2277944A3 (en) 2009-07-24 2012-01-04 Electronics and Telecommunications Research Institute Composition for organic dielectric and organic thin film transistor formed using the same
KR101842735B1 (ko) * 2010-09-02 2018-03-27 메르크 파텐트 게엠베하 전자 디바이스용 게이트 절연체 층
CN103097420B (zh) 2010-09-02 2016-06-22 默克专利股份有限公司 用于电子器件的夹层

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200603338A (en) * 2004-02-13 2006-01-16 Promerus Llc Polymers of polycyclic olefins having a polyhedral oligosilsesquioxane pendant group and uses thereof
CN101669225A (zh) * 2007-04-25 2010-03-10 默克专利股份有限公司 电子器件的制备方法

Also Published As

Publication number Publication date
US20120056183A1 (en) 2012-03-08
JP2013541191A (ja) 2013-11-07
DE112011102917T5 (de) 2013-09-05
JP2017141446A (ja) 2017-08-17
EP2611841A1 (en) 2013-07-10
CN105038069B (zh) 2017-10-17
RU2013114414A (ru) 2014-10-10
EP2676979B1 (en) 2016-07-13
EP2611841B1 (en) 2015-10-28
GB2497451A (en) 2013-06-12
CN104877292A (zh) 2015-09-02
US9647222B2 (en) 2017-05-09
KR101842735B1 (ko) 2018-03-27
EP2676979A1 (en) 2013-12-25
GB2497451A8 (en) 2013-06-19
WO2012028279A1 (en) 2012-03-08
JP6097216B2 (ja) 2017-03-15
TW201219432A (en) 2012-05-16
US20150372246A1 (en) 2015-12-24
CN105038069A (zh) 2015-11-11
JP6334020B2 (ja) 2018-05-30
CN103261250B (zh) 2016-11-09
WO2012028279A9 (en) 2012-05-31
SG187955A1 (en) 2013-03-28
KR20130114121A (ko) 2013-10-16
US9175123B2 (en) 2015-11-03
GB201303582D0 (en) 2013-04-10
CN103261250A (zh) 2013-08-21

Similar Documents

Publication Publication Date Title
TWI618723B (zh) 用於有機電子裝置之閘極絕緣層
TWI577702B (zh) 用於電子裝置之夾層
CN109196676B (zh) 有机介电层及有机电子器件
HK1188233B (en) Gate insulator layer for electronic devices
HK1188233A (en) Gate insulator layer for electronic devices
HK1184476A (en) Interlayer for electronic devices