TWI617934B - 資料修正裝置、描繪裝置、配線圖案形成系統、檢查裝置、資料修正方法及配線基板之製造方法 - Google Patents

資料修正裝置、描繪裝置、配線圖案形成系統、檢查裝置、資料修正方法及配線基板之製造方法 Download PDF

Info

Publication number
TWI617934B
TWI617934B TW105123797A TW105123797A TWI617934B TW I617934 B TWI617934 B TW I617934B TW 105123797 A TW105123797 A TW 105123797A TW 105123797 A TW105123797 A TW 105123797A TW I617934 B TWI617934 B TW I617934B
Authority
TW
Taiwan
Prior art keywords
pattern
mask
substrate
gap
etching
Prior art date
Application number
TW105123797A
Other languages
English (en)
Chinese (zh)
Other versions
TW201717076A (zh
Inventor
小松崎孝雄
山本哲平
Original Assignee
思可林集團股份有限公司
日立化成股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 思可林集團股份有限公司, 日立化成股份有限公司 filed Critical 思可林集團股份有限公司
Publication of TW201717076A publication Critical patent/TW201717076A/zh
Application granted granted Critical
Publication of TWI617934B publication Critical patent/TWI617934B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW105123797A 2015-09-25 2016-07-27 資料修正裝置、描繪裝置、配線圖案形成系統、檢查裝置、資料修正方法及配線基板之製造方法 TWI617934B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-187980 2015-09-25
JP2015187980A JP6663672B2 (ja) 2015-09-25 2015-09-25 データ補正装置、描画装置、配線パターン形成システム、検査装置、データ補正方法および配線基板の製造方法

Publications (2)

Publication Number Publication Date
TW201717076A TW201717076A (zh) 2017-05-16
TWI617934B true TWI617934B (zh) 2018-03-11

Family

ID=58385958

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105123797A TWI617934B (zh) 2015-09-25 2016-07-27 資料修正裝置、描繪裝置、配線圖案形成系統、檢查裝置、資料修正方法及配線基板之製造方法

Country Status (5)

Country Link
JP (1) JP6663672B2 (ko)
KR (1) KR102082583B1 (ko)
CN (1) CN108029196B (ko)
TW (1) TWI617934B (ko)
WO (1) WO2017051599A1 (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768958B2 (en) * 2002-11-26 2004-07-27 Lsi Logic Corporation Automatic calibration of a masking process simulator
CN1535104A (zh) * 2002-12-26 2004-10-06 株式会社东芝 印刷布线板制造装置以及印刷布线板制造方法
JP2005116942A (ja) * 2003-10-10 2005-04-28 Fuji Photo Film Co Ltd 製造支援システムおよびプログラム
US20070204242A1 (en) * 2006-02-17 2007-08-30 Mentor Graphics Corporation Gate modeling for semiconductor fabrication process effects

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07302824A (ja) * 1994-05-09 1995-11-14 Sony Corp パターン層の位置測定方法並びにテストパターン層及びその形成方法
JP3883706B2 (ja) * 1998-07-31 2007-02-21 シャープ株式会社 エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法
KR101678070B1 (ko) * 2009-12-24 2016-11-22 삼성전자 주식회사 마스크리스 노광장치 및 그 제어방법
JP5503992B2 (ja) 2010-02-08 2014-05-28 株式会社オーク製作所 露光装置
JP6491974B2 (ja) * 2015-07-17 2019-03-27 日立化成株式会社 露光データ補正装置、配線パターン形成システム、及び配線基板の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768958B2 (en) * 2002-11-26 2004-07-27 Lsi Logic Corporation Automatic calibration of a masking process simulator
CN1535104A (zh) * 2002-12-26 2004-10-06 株式会社东芝 印刷布线板制造装置以及印刷布线板制造方法
JP2005116942A (ja) * 2003-10-10 2005-04-28 Fuji Photo Film Co Ltd 製造支援システムおよびプログラム
US20070204242A1 (en) * 2006-02-17 2007-08-30 Mentor Graphics Corporation Gate modeling for semiconductor fabrication process effects

Also Published As

Publication number Publication date
CN108029196B (zh) 2020-07-28
KR20180031776A (ko) 2018-03-28
JP6663672B2 (ja) 2020-03-13
JP2017063131A (ja) 2017-03-30
CN108029196A (zh) 2018-05-11
WO2017051599A1 (ja) 2017-03-30
TW201717076A (zh) 2017-05-16
KR102082583B1 (ko) 2020-02-27

Similar Documents

Publication Publication Date Title
US11120182B2 (en) Methodology of incorporating wafer physical measurement with digital simulation for improving semiconductor device fabrication
US7383530B2 (en) System and method for examining mask pattern fidelity
JP2016053558A (ja) 検査方法
JP2002258463A (ja) フォトマスクパタン欠陥検査方法および微細図形パタンの検出方法
KR102313411B1 (ko) 간섭측정을 이용한 웨이퍼 내의 임계 치수 문제 및 패턴 결함의 예측 및 제어
US11460785B2 (en) Method for the qualification of a mask for microlithography
JP2007163686A (ja) マスクパターン評価方法及び評価装置
JP2009042055A (ja) マスク欠陥検査データ生成方法とマスク欠陥検査方法
CN104412359B (zh) 使用不对称嵌入式成像目标的聚焦监测方法
EP3133553B1 (en) Method for verifying a pattern of features printed by a lithography process
JP6570010B2 (ja) マスクのための高密度位置合わせマップを生成するための方法、システム、およびコンピュータプログラム製品
TWI620032B (zh) 資料修正裝置、描繪裝置、檢查裝置、資料修正方法、描繪方法、檢查方法及記錄媒體
TWI547819B (zh) 資料修正裝置、描繪裝置、檢查裝置、資料修正方法、描繪方法、檢查方法及記錄有程式之記憶媒體
TWI421908B (zh) 光學鄰近校正模型的建立方法
KR20200028169A (ko) Opc 방법, 및 그 opc 방법을 이용한 마스크 제조방법
TWI617934B (zh) 資料修正裝置、描繪裝置、配線圖案形成系統、檢查裝置、資料修正方法及配線基板之製造方法
TWI612296B (zh) 資料修正裝置、描繪裝置、檢查裝置、資料修正方法、描繪方法、檢查方法及記錄有程式之記錄媒體
JP2016035542A (ja) 位置測定方法、位置ずれマップの作成方法および検査システム
JP2006261436A (ja) 信号処理方法及びその装置
JP2006330270A (ja) マスクデータ作成方法、マスク製造方法および半導体装置の製造方法
US8336004B2 (en) Dimension assurance of mask using plurality of types of pattern ambient environment
JP2016035539A (ja) 位置測定方法、位置ずれマップの作成方法および検査システム
TWI647984B (zh) 資料補正裝置、描繪裝置、資料補正方法、描繪方法及程式產品
JP2007033765A (ja) パターン製造システム、露光装置、及び露光方法
JP2004212572A (ja) 露光用マスク、半導体装置の製造方法及び欠陥修正要否判定装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees