TWI600156B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI600156B
TWI600156B TW100123345A TW100123345A TWI600156B TW I600156 B TWI600156 B TW I600156B TW 100123345 A TW100123345 A TW 100123345A TW 100123345 A TW100123345 A TW 100123345A TW I600156 B TWI600156 B TW I600156B
Authority
TW
Taiwan
Prior art keywords
oxide semiconductor
oxide
electrode
insulating layer
film
Prior art date
Application number
TW100123345A
Other languages
English (en)
Chinese (zh)
Other versions
TW201216471A (en
Inventor
山崎舜平
高橋正弘
廣橋拓也
栃林克明
中澤安孝
橫山雅俊
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201216471A publication Critical patent/TW201216471A/zh
Application granted granted Critical
Publication of TWI600156B publication Critical patent/TWI600156B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
TW100123345A 2010-07-02 2011-07-01 半導體裝置 TWI600156B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010152179 2010-07-02
JP2011100534 2011-04-28

Publications (2)

Publication Number Publication Date
TW201216471A TW201216471A (en) 2012-04-16
TWI600156B true TWI600156B (zh) 2017-09-21

Family

ID=45399022

Family Applications (5)

Application Number Title Priority Date Filing Date
TW100123345A TWI600156B (zh) 2010-07-02 2011-07-01 半導體裝置
TW109136305A TWI763085B (zh) 2010-07-02 2011-07-01 半導體裝置
TW111100135A TWI772241B (zh) 2010-07-02 2011-07-01 半導體裝置
TW109101096A TWI713226B (zh) 2010-07-02 2011-07-01 半導體裝置
TW105132071A TWI684279B (zh) 2010-07-02 2011-07-01 半導體裝置

Family Applications After (4)

Application Number Title Priority Date Filing Date
TW109136305A TWI763085B (zh) 2010-07-02 2011-07-01 半導體裝置
TW111100135A TWI772241B (zh) 2010-07-02 2011-07-01 半導體裝置
TW109101096A TWI713226B (zh) 2010-07-02 2011-07-01 半導體裝置
TW105132071A TWI684279B (zh) 2010-07-02 2011-07-01 半導體裝置

Country Status (4)

Country Link
US (2) US20120001179A1 (enExample)
JP (7) JP5856395B2 (enExample)
KR (2) KR20120003390A (enExample)
TW (5) TWI600156B (enExample)

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TWI721026B (zh) 2015-10-30 2021-03-11 日商半導體能源研究所股份有限公司 電容器、半導體裝置、模組以及電子裝置的製造方法
WO2019102314A1 (ja) * 2017-11-24 2019-05-31 株式会社半導体エネルギー研究所 半導体材料、および半導体装置

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Also Published As

Publication number Publication date
JP2018029196A (ja) 2018-02-22
KR20190003856A (ko) 2019-01-09
JP5856395B2 (ja) 2016-02-09
JP2016086179A (ja) 2016-05-19
JP2019071485A (ja) 2019-05-09
JP6657440B2 (ja) 2020-03-04
JP2020107889A (ja) 2020-07-09
TW201216471A (en) 2012-04-16
TW201703263A (zh) 2017-01-16
JP2022044686A (ja) 2022-03-17
TWI763085B (zh) 2022-05-01
KR20120003390A (ko) 2012-01-10
US20120001179A1 (en) 2012-01-05
JP6818918B2 (ja) 2021-01-27
TW202021135A (zh) 2020-06-01
TW202218167A (zh) 2022-05-01
JP7013559B2 (ja) 2022-01-31
TWI713226B (zh) 2020-12-11
TW202107716A (zh) 2021-02-16
JP2012238826A (ja) 2012-12-06
TWI684279B (zh) 2020-02-01
JP2021061433A (ja) 2021-04-15
US20220123150A1 (en) 2022-04-21
TWI772241B (zh) 2022-07-21
JP6479921B2 (ja) 2019-03-06

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