KR20120003390A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20120003390A
KR20120003390A KR1020110064841A KR20110064841A KR20120003390A KR 20120003390 A KR20120003390 A KR 20120003390A KR 1020110064841 A KR1020110064841 A KR 1020110064841A KR 20110064841 A KR20110064841 A KR 20110064841A KR 20120003390 A KR20120003390 A KR 20120003390A
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KR
South Korea
Prior art keywords
oxide
oxide semiconductor
insulating layer
electrode
film
Prior art date
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Ceased
Application number
KR1020110064841A
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English (en)
Korean (ko)
Inventor
순페이 야마자키
마사히로 타카하시
타쿠야 히로하시
카츠아키 토치바야시
야스타카 나카자와
마사토시 요코야마
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20120003390A publication Critical patent/KR20120003390A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020110064841A 2010-07-02 2011-06-30 반도체 장치 Ceased KR20120003390A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010152179 2010-07-02
JPJP-P-2010-152179 2010-07-02
JPJP-P-2011-100534 2011-04-28
JP2011100534 2011-04-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190001032A Division KR20190003856A (ko) 2010-07-02 2019-01-04 반도체 장치

Publications (1)

Publication Number Publication Date
KR20120003390A true KR20120003390A (ko) 2012-01-10

Family

ID=45399022

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020110064841A Ceased KR20120003390A (ko) 2010-07-02 2011-06-30 반도체 장치
KR1020190001032A Ceased KR20190003856A (ko) 2010-07-02 2019-01-04 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020190001032A Ceased KR20190003856A (ko) 2010-07-02 2019-01-04 반도체 장치

Country Status (4)

Country Link
US (2) US20120001179A1 (enExample)
JP (7) JP5856395B2 (enExample)
KR (2) KR20120003390A (enExample)
TW (5) TWI600156B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013109071A1 (ko) * 2012-01-20 2013-07-25 경희대학교 산학협력단 산화물 반도체 박막 트랜지스터 제조방법 및 이를 이용한 능동구동 디스플레이 장치, 능동구동 센서장치

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KR20130085859A (ko) * 2012-01-20 2013-07-30 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
US20140299873A1 (en) * 2013-04-05 2014-10-09 Semiconductor Energy Laboratory Co., Ltd. Single-crystal oxide semiconductor, thin film, oxide stack, and formation method thereof
KR102479472B1 (ko) 2013-04-15 2022-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
KR102304824B1 (ko) * 2013-08-09 2021-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN106409686A (zh) * 2015-08-03 2017-02-15 中华映管股份有限公司 制造氧化物半导体薄膜电晶体的方法
DE102015220034A1 (de) 2015-10-15 2017-04-20 Benecke-Kaliko Ag Folienlaminat und Innenverkleidungsteil für Kraftfahrzeuge
TWI721026B (zh) 2015-10-30 2021-03-11 日商半導體能源研究所股份有限公司 電容器、半導體裝置、模組以及電子裝置的製造方法
WO2019102314A1 (ja) * 2017-11-24 2019-05-31 株式会社半導体エネルギー研究所 半導体材料、および半導体装置

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013109071A1 (ko) * 2012-01-20 2013-07-25 경희대학교 산학협력단 산화물 반도체 박막 트랜지스터 제조방법 및 이를 이용한 능동구동 디스플레이 장치, 능동구동 센서장치
KR101308809B1 (ko) * 2012-01-20 2013-09-13 경희대학교 산학협력단 산화물 반도체 박막 트랜지스터 제조방법 및 이를 이용한 능동구동 디스플레이 장치, 능동구동 센서장치

Also Published As

Publication number Publication date
TW202021135A (zh) 2020-06-01
US20120001179A1 (en) 2012-01-05
JP5856395B2 (ja) 2016-02-09
TWI600156B (zh) 2017-09-21
TW202218167A (zh) 2022-05-01
JP6818918B2 (ja) 2021-01-27
JP2019071485A (ja) 2019-05-09
TW202107716A (zh) 2021-02-16
KR20190003856A (ko) 2019-01-09
JP2012238826A (ja) 2012-12-06
JP7013559B2 (ja) 2022-01-31
JP2022044686A (ja) 2022-03-17
JP2018029196A (ja) 2018-02-22
JP2020107889A (ja) 2020-07-09
JP6657440B2 (ja) 2020-03-04
TWI772241B (zh) 2022-07-21
TWI713226B (zh) 2020-12-11
TW201703263A (zh) 2017-01-16
JP2021061433A (ja) 2021-04-15
TWI763085B (zh) 2022-05-01
TW201216471A (en) 2012-04-16
US20220123150A1 (en) 2022-04-21
JP6479921B2 (ja) 2019-03-06
TWI684279B (zh) 2020-02-01
JP2016086179A (ja) 2016-05-19

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Request date: 20190104

J301 Trial decision

Free format text: TRIAL NUMBER: 2019101000028; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20190104

Effective date: 20191028

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20191028

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20190104

Decision date: 20191028

Appeal identifier: 2019101000028