JP5856395B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5856395B2
JP5856395B2 JP2011142780A JP2011142780A JP5856395B2 JP 5856395 B2 JP5856395 B2 JP 5856395B2 JP 2011142780 A JP2011142780 A JP 2011142780A JP 2011142780 A JP2011142780 A JP 2011142780A JP 5856395 B2 JP5856395 B2 JP 5856395B2
Authority
JP
Japan
Prior art keywords
oxide semiconductor
oxide
electrode
layer
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011142780A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012238826A (ja
JP2012238826A5 (enExample
Inventor
山崎　舜平
舜平 山崎
高橋　正弘
正弘 高橋
拓也 廣橋
拓也 廣橋
克明 栃林
克明 栃林
安孝 中澤
安孝 中澤
雅俊 横山
雅俊 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011142780A priority Critical patent/JP5856395B2/ja
Publication of JP2012238826A publication Critical patent/JP2012238826A/ja
Publication of JP2012238826A5 publication Critical patent/JP2012238826A5/ja
Application granted granted Critical
Publication of JP5856395B2 publication Critical patent/JP5856395B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2011142780A 2010-07-02 2011-06-28 半導体装置 Active JP5856395B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011142780A JP5856395B2 (ja) 2010-07-02 2011-06-28 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2010152179 2010-07-02
JP2010152179 2010-07-02
JP2011100534 2011-04-28
JP2011100534 2011-04-28
JP2011142780A JP5856395B2 (ja) 2010-07-02 2011-06-28 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015241707A Division JP2016086179A (ja) 2010-07-02 2015-12-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2012238826A JP2012238826A (ja) 2012-12-06
JP2012238826A5 JP2012238826A5 (enExample) 2014-08-07
JP5856395B2 true JP5856395B2 (ja) 2016-02-09

Family

ID=45399022

Family Applications (7)

Application Number Title Priority Date Filing Date
JP2011142780A Active JP5856395B2 (ja) 2010-07-02 2011-06-28 半導体装置
JP2015241707A Withdrawn JP2016086179A (ja) 2010-07-02 2015-12-11 半導体装置
JP2017193380A Active JP6479921B2 (ja) 2010-07-02 2017-10-03 半導体装置
JP2019019362A Active JP6657440B2 (ja) 2010-07-02 2019-02-06 半導体装置
JP2020017754A Active JP6818918B2 (ja) 2010-07-02 2020-02-05 半導体装置
JP2020218686A Active JP7013559B2 (ja) 2010-07-02 2020-12-28 半導体装置
JP2022006493A Withdrawn JP2022044686A (ja) 2010-07-02 2022-01-19 半導体装置

Family Applications After (6)

Application Number Title Priority Date Filing Date
JP2015241707A Withdrawn JP2016086179A (ja) 2010-07-02 2015-12-11 半導体装置
JP2017193380A Active JP6479921B2 (ja) 2010-07-02 2017-10-03 半導体装置
JP2019019362A Active JP6657440B2 (ja) 2010-07-02 2019-02-06 半導体装置
JP2020017754A Active JP6818918B2 (ja) 2010-07-02 2020-02-05 半導体装置
JP2020218686A Active JP7013559B2 (ja) 2010-07-02 2020-12-28 半導体装置
JP2022006493A Withdrawn JP2022044686A (ja) 2010-07-02 2022-01-19 半導体装置

Country Status (4)

Country Link
US (2) US20120001179A1 (enExample)
JP (7) JP5856395B2 (enExample)
KR (2) KR20120003390A (enExample)
TW (5) TWI600156B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6059968B2 (ja) * 2011-11-25 2017-01-11 株式会社半導体エネルギー研究所 半導体装置、及び液晶表示装置
KR101308809B1 (ko) * 2012-01-20 2013-09-13 경희대학교 산학협력단 산화물 반도체 박막 트랜지스터 제조방법 및 이를 이용한 능동구동 디스플레이 장치, 능동구동 센서장치
KR20130085859A (ko) * 2012-01-20 2013-07-30 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
US20140299873A1 (en) * 2013-04-05 2014-10-09 Semiconductor Energy Laboratory Co., Ltd. Single-crystal oxide semiconductor, thin film, oxide stack, and formation method thereof
KR102479472B1 (ko) 2013-04-15 2022-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
KR102304824B1 (ko) * 2013-08-09 2021-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN106409686A (zh) * 2015-08-03 2017-02-15 中华映管股份有限公司 制造氧化物半导体薄膜电晶体的方法
DE102015220034A1 (de) 2015-10-15 2017-04-20 Benecke-Kaliko Ag Folienlaminat und Innenverkleidungsteil für Kraftfahrzeuge
TWI721026B (zh) 2015-10-30 2021-03-11 日商半導體能源研究所股份有限公司 電容器、半導體裝置、模組以及電子裝置的製造方法
WO2019102314A1 (ja) * 2017-11-24 2019-05-31 株式会社半導体エネルギー研究所 半導体材料、および半導体装置

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6858898B1 (en) * 1999-03-23 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6461899B1 (en) * 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
JP2001358342A (ja) * 2000-06-14 2001-12-26 Sharp Corp アクティブマトリクス基板
TWI313059B (enExample) * 2000-12-08 2009-08-01 Sony Corporatio
JP2003264192A (ja) * 2002-03-07 2003-09-19 Sanyo Electric Co Ltd 配線構造、その製造方法、および光学装置
JP4128396B2 (ja) * 2002-06-07 2008-07-30 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2004193446A (ja) * 2002-12-13 2004-07-08 Sanyo Electric Co Ltd 半導体装置の製造方法および薄膜トランジスタの製造方法
EP1649501B1 (en) * 2003-07-30 2007-01-03 Infineon Technologies AG High-k dielectric film, method of forming the same and related semiconductor device
US7026713B2 (en) * 2003-12-17 2006-04-11 Hewlett-Packard Development Company, L.P. Transistor device having a delafossite material
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP5126729B2 (ja) * 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
US20060197089A1 (en) * 2005-03-03 2006-09-07 Chunghwa Picture Tubes., Ltd. Semiconductor device and its manufacturing method
JP2006351844A (ja) * 2005-06-16 2006-12-28 Mitsubishi Electric Corp 電気光学表示装置およびその製造方法
JP5232360B2 (ja) * 2006-01-05 2013-07-10 株式会社ジャパンディスプレイイースト 半導体装置及びその製造方法
JP4932415B2 (ja) * 2006-09-29 2012-05-16 株式会社半導体エネルギー研究所 半導体装置
JP2008140984A (ja) * 2006-12-01 2008-06-19 Sharp Corp 半導体素子、半導体素子の製造方法、及び表示装置
KR101312259B1 (ko) * 2007-02-09 2013-09-25 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
KR101402102B1 (ko) * 2007-03-23 2014-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작 방법
JP4727684B2 (ja) * 2007-03-27 2011-07-20 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
KR101334182B1 (ko) * 2007-05-28 2013-11-28 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터의 제조방법
JP5241143B2 (ja) * 2007-05-30 2013-07-17 キヤノン株式会社 電界効果型トランジスタ
JP2009021540A (ja) * 2007-06-13 2009-01-29 Rohm Co Ltd ＺｎＯ系薄膜及びＺｎＯ系半導体素子
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
JP5232425B2 (ja) * 2007-09-10 2013-07-10 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置およびその製造方法
KR20090041506A (ko) * 2007-10-24 2009-04-29 엘지전자 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
JP5264197B2 (ja) * 2008-01-23 2013-08-14 キヤノン株式会社 薄膜トランジスタ
JP5182993B2 (ja) * 2008-03-31 2013-04-17 株式会社半導体エネルギー研究所 表示装置及びその作製方法
CN102007586B (zh) * 2008-04-18 2013-09-25 株式会社半导体能源研究所 薄膜晶体管及其制造方法
EP2297778A1 (en) * 2008-05-23 2011-03-23 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
US8314765B2 (en) * 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
US7812346B2 (en) * 2008-07-16 2010-10-12 Cbrite, Inc. Metal oxide TFT with improved carrier mobility
TWI875442B (zh) * 2008-07-31 2025-03-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9000441B2 (en) * 2008-08-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8030718B2 (en) * 2008-09-12 2011-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Local charge and work function engineering on MOSFET
JP2010073880A (ja) * 2008-09-18 2010-04-02 Fujifilm Corp 薄膜電界効果型トランジスタ及びその製造方法
WO2010035627A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010035625A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semi conductor device
JP5552753B2 (ja) * 2008-10-08 2014-07-16 ソニー株式会社 薄膜トランジスタおよび表示装置
JP5430113B2 (ja) * 2008-10-08 2014-02-26 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5595003B2 (ja) * 2008-10-23 2014-09-24 株式会社半導体エネルギー研究所 表示装置
CN102509736B (zh) * 2008-10-24 2015-08-19 株式会社半导体能源研究所 半导体器件和用于制造该半导体器件的方法
KR101634411B1 (ko) * 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 표시 장치 및 전자 장치
KR20130138352A (ko) * 2008-11-07 2013-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2184783B1 (en) * 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
JP5489449B2 (ja) * 2008-12-10 2014-05-14 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US8247812B2 (en) * 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
KR102195170B1 (ko) * 2009-03-12 2020-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2533293A4 (en) * 2010-02-01 2016-12-07 Nec Corp AMORPHIC OXID THIN LAYER, THIN FILM TRANSISTOR THEREWITH, AND METHOD FOR PRODUCING THE THIN-LAYER TRANSISTOR

Also Published As

Publication number Publication date
TW202021135A (zh) 2020-06-01
US20120001179A1 (en) 2012-01-05
TWI600156B (zh) 2017-09-21
TW202218167A (zh) 2022-05-01
JP6818918B2 (ja) 2021-01-27
JP2019071485A (ja) 2019-05-09
KR20120003390A (ko) 2012-01-10
TW202107716A (zh) 2021-02-16
KR20190003856A (ko) 2019-01-09
JP2012238826A (ja) 2012-12-06
JP7013559B2 (ja) 2022-01-31
JP2022044686A (ja) 2022-03-17
JP2018029196A (ja) 2018-02-22
JP2020107889A (ja) 2020-07-09
JP6657440B2 (ja) 2020-03-04
TWI772241B (zh) 2022-07-21
TWI713226B (zh) 2020-12-11
TW201703263A (zh) 2017-01-16
JP2021061433A (ja) 2021-04-15
TWI763085B (zh) 2022-05-01
TW201216471A (en) 2012-04-16
US20220123150A1 (en) 2022-04-21
JP6479921B2 (ja) 2019-03-06
TWI684279B (zh) 2020-02-01
JP2016086179A (ja) 2016-05-19

Similar Documents

Publication Publication Date Title
JP6606228B2 (ja) 半導体装置の作製方法
JP6595067B2 (ja) 表示装置の作製方法
JP5216883B2 (ja) 半導体装置の作製方法
JP6291014B2 (ja) 半導体装置の作製方法
JP5771451B2 (ja) 半導体装置
JP6657440B2 (ja) 半導体装置
JP5731244B2 (ja) 半導体装置の作製方法
JP2011243971A (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140620

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140620

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150421

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150423

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150521

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151117

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151211

R150 Certificate of patent or registration of utility model

Ref document number: 5856395

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250