TWI600037B - 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法 - Google Patents

無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法 Download PDF

Info

Publication number
TWI600037B
TWI600037B TW103103804A TW103103804A TWI600037B TW I600037 B TWI600037 B TW I600037B TW 103103804 A TW103103804 A TW 103103804A TW 103103804 A TW103103804 A TW 103103804A TW I600037 B TWI600037 B TW I600037B
Authority
TW
Taiwan
Prior art keywords
inductor
winding
substrate
inductor winding
inductor structure
Prior art date
Application number
TW103103804A
Other languages
English (en)
Chinese (zh)
Other versions
TW201443940A (zh
Inventor
多伊爾詹姆斯湯瑪士
瑪姆狄法爾席德
亞朗尼亞米拉里夏昂
Original Assignee
高通公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 高通公司 filed Critical 高通公司
Publication of TW201443940A publication Critical patent/TW201443940A/zh
Application granted granted Critical
Publication of TWI600037B publication Critical patent/TWI600037B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/20Inductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/501Inductive arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/24Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/4902Electromagnet, transformer or inductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
TW103103804A 2013-02-08 2014-02-05 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法 TWI600037B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361762555P 2013-02-08 2013-02-08
US13/791,388 US10115661B2 (en) 2013-02-08 2013-03-08 Substrate-less discrete coupled inductor structure

Publications (2)

Publication Number Publication Date
TW201443940A TW201443940A (zh) 2014-11-16
TWI600037B true TWI600037B (zh) 2017-09-21

Family

ID=51297097

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103103804A TWI600037B (zh) 2013-02-08 2014-02-05 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法
TW105110591A TWI611437B (zh) 2013-02-08 2014-02-05 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW105110591A TWI611437B (zh) 2013-02-08 2014-02-05 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法

Country Status (7)

Country Link
US (1) US10115661B2 (https=)
EP (1) EP2954543B1 (https=)
JP (1) JP2016513364A (https=)
KR (1) KR20150115867A (https=)
CN (1) CN104969312B (https=)
TW (2) TWI600037B (https=)
WO (1) WO2014123790A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343442B2 (en) 2012-09-20 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Passive devices in package-on-package structures and methods for forming the same
US9704739B2 (en) * 2014-07-30 2017-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device packages, packaging methods, and packaged semiconductor devices
WO2016094865A1 (en) 2014-12-11 2016-06-16 St. Jude Medical, Cardiology Division, Inc. Multi-layer sensor core
CN105489597B (zh) 2015-12-28 2018-06-15 华为技术有限公司 系统级封装模块组件、系统级封装模块及电子设备
US9761522B2 (en) * 2016-01-29 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Wireless charging package with chip integrated in coil center
EP3449502B1 (en) 2016-04-26 2021-06-30 Linear Technology LLC Mechanically-compliant and electrically and thermally conductive leadframes for component-on-package circuits
US11369431B2 (en) * 2016-06-11 2022-06-28 Boston Scientific Scimed Inc. Inductive double flat coil displacement sensor
TWI645428B (zh) * 2016-11-25 2018-12-21 瑞昱半導體股份有限公司 積體電感
US10121739B1 (en) 2017-05-02 2018-11-06 Micron Technology, Inc. Multi-die inductors with coupled through-substrate via cores
US10872843B2 (en) 2017-05-02 2020-12-22 Micron Technology, Inc. Semiconductor devices with back-side coils for wireless signal and power coupling
US10134671B1 (en) 2017-05-02 2018-11-20 Micron Technology, Inc. 3D interconnect multi-die inductors with through-substrate via cores
US20180323369A1 (en) 2017-05-02 2018-11-08 Micron Technology, Inc. Inductors with through-substrate via cores
US20180323253A1 (en) * 2017-05-02 2018-11-08 Micron Technology, Inc. Semiconductor devices with through-substrate coils for wireless signal and power coupling
US10497635B2 (en) 2018-03-27 2019-12-03 Linear Technology Holding Llc Stacked circuit package with molded base having laser drilled openings for upper package
US11410977B2 (en) 2018-11-13 2022-08-09 Analog Devices International Unlimited Company Electronic module for high power applications
US12272638B2 (en) * 2019-10-08 2025-04-08 Murata Manufacturing Co., Ltd. Integrated transformer module
US11844178B2 (en) 2020-06-02 2023-12-12 Analog Devices International Unlimited Company Electronic component
KR102941294B1 (ko) 2021-10-15 2026-03-20 삼성전자주식회사 재배선 기판 및 이를 포함하는 반도체 패키지
CN116013662B (zh) * 2022-12-30 2025-11-07 东莞顺络电子有限公司 一种高耦合系数电感

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147192A (ja) * 1984-01-11 1985-08-03 株式会社日立製作所 プリント配線板の製造方法
JPS6442110A (en) * 1987-08-10 1989-02-14 Hitachi Ltd Formation of conductor pattern
JPH0442110A (ja) * 1990-06-08 1992-02-12 Olympus Optical Co Ltd 不均質媒質を用いたレンズ
JPH09153406A (ja) * 1995-09-28 1997-06-10 Toshiba Corp 平面コイルおよびそれを用いた平面磁気素子およびそれらの製造方法
JP2001244123A (ja) 2000-02-28 2001-09-07 Kawatetsu Mining Co Ltd 表面実装型平面磁気素子及びその製造方法
JP2002110423A (ja) * 2000-09-28 2002-04-12 Kyocera Corp コモンモードチョークコイル
JP2002280878A (ja) 2001-03-19 2002-09-27 Alps Electric Co Ltd 電子回路ユニット
JP2003059744A (ja) * 2001-08-15 2003-02-28 Sony Corp インダクタの製造方法
JP2004039867A (ja) 2002-07-03 2004-02-05 Sony Corp 多層配線回路モジュール及びその製造方法
US20070031830A1 (en) 2002-12-09 2007-02-08 Antonio Camargo Process for the determination of the primary structure of the messenger rna coding for the human recombinant endooligopeptidase a (heopa)(af217798)...
GB0321658D0 (en) 2003-09-16 2003-10-15 South Bank Univ Entpr Ltd Bifilar transformer
US9029196B2 (en) * 2003-11-10 2015-05-12 Stats Chippac, Ltd. Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
JP4012526B2 (ja) 2004-07-01 2007-11-21 Tdk株式会社 薄膜コイルおよびその製造方法、ならびにコイル構造体およびその製造方法
US7432794B2 (en) 2004-08-16 2008-10-07 Telefonaktiebolaget L M Ericsson (Publ) Variable integrated inductor
TWI311452B (en) 2005-03-30 2009-06-21 Advanced Semiconductor Eng Method of fabricating a device-containing substrate
US7429786B2 (en) 2005-04-29 2008-09-30 Stats Chippac Ltd. Semiconductor package including second substrate and having exposed substrate surfaces on upper and lower sides
US8368501B2 (en) 2006-06-29 2013-02-05 Intel Corporation Integrated inductors
US8212155B1 (en) 2007-06-26 2012-07-03 Wright Peter V Integrated passive device
US7841070B2 (en) * 2007-08-21 2010-11-30 Intel Corporation Method of fabricating a transformer device
US8149080B2 (en) * 2007-09-25 2012-04-03 Infineon Technologies Ag Integrated circuit including inductive device and ferromagnetic material
US7759212B2 (en) 2007-12-26 2010-07-20 Stats Chippac, Ltd. System-in-package having integrated passive devices and method therefor
US7956603B2 (en) 2008-06-16 2011-06-07 Medility Llc Sensor inductors, sensors for monitoring movements and positioning, apparatus, systems and methods therefore
US8237269B2 (en) * 2008-08-01 2012-08-07 Qualcomm Incorporated High Q transformer disposed at least partly in a non-semiconductor substrate
EP2151834A3 (en) 2008-08-05 2012-09-19 Nxp B.V. Inductor assembly
US7843047B2 (en) * 2008-11-21 2010-11-30 Stats Chippac Ltd. Encapsulant interposer system with integrated passive devices and manufacturing method therefor
WO2011033496A1 (en) * 2009-09-16 2011-03-24 Maradin Technologies Ltd. Micro coil apparatus and manufacturing methods therefor
US20120002377A1 (en) 2010-06-30 2012-01-05 William French Galvanic isolation transformer
CN102376693B (zh) * 2010-08-23 2016-05-11 香港科技大学 单片磁感应器件
JP5839535B2 (ja) 2010-10-20 2016-01-06 旭化成エレクトロニクス株式会社 平面コイル及びアクチュエータ
JP5649490B2 (ja) 2011-03-16 2015-01-07 新光電気工業株式会社 配線基板及びその製造方法
US8519506B2 (en) * 2011-06-28 2013-08-27 National Semiconductor Corporation Thermally conductive substrate for galvanic isolation

Also Published As

Publication number Publication date
JP2016513364A (ja) 2016-05-12
EP2954543A1 (en) 2015-12-16
KR20150115867A (ko) 2015-10-14
TW201640535A (zh) 2016-11-16
TW201443940A (zh) 2014-11-16
US20140225700A1 (en) 2014-08-14
TWI611437B (zh) 2018-01-11
WO2014123790A1 (en) 2014-08-14
CN104969312A (zh) 2015-10-07
CN104969312B (zh) 2018-05-15
US10115661B2 (en) 2018-10-30
EP2954543B1 (en) 2020-04-29

Similar Documents

Publication Publication Date Title
TWI600037B (zh) 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法
JP6476132B2 (ja) 基板内結合インダクタ構造
US10256286B2 (en) Integrated inductor for integrated circuit devices
KR101844814B1 (ko) 적층 집적 회로 패키지에서의 비아의 수동 구성 요소
CN105742270B (zh) 堆叠集成电路封装中的集成无源组件
KR101589041B1 (ko) 자기 코어 인덕터(mci) 다이 및 이를 포함하는 반도체 패키지와 mci 다이를 제조하는 방법
US9893048B2 (en) Passive-on-glass (POG) device and method
JP6377178B2 (ja) 埋込型パッケージ基板コンデンサ
CN106463261A (zh) 具有可配置/可控制等效串联电阻的嵌入式封装基板电容器
TW201447937A (zh) 帶有使用高磁導率材料的通量集中的耦合個別電感器
CN120898258A (zh) 包括具有低互感或无互感的电感器对的集成器件
US12402332B2 (en) Integrated passive devices
TW201730902A (zh) 具有被形成在核心上的線圈之電子封裝體

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees