KR20150115867A - 기판이 빠진 이산 결합된 인덕터 구조체 - Google Patents

기판이 빠진 이산 결합된 인덕터 구조체 Download PDF

Info

Publication number
KR20150115867A
KR20150115867A KR1020157023728A KR20157023728A KR20150115867A KR 20150115867 A KR20150115867 A KR 20150115867A KR 1020157023728 A KR1020157023728 A KR 1020157023728A KR 20157023728 A KR20157023728 A KR 20157023728A KR 20150115867 A KR20150115867 A KR 20150115867A
Authority
KR
South Korea
Prior art keywords
inductor
substrate
providing
winding
inductor structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020157023728A
Other languages
English (en)
Korean (ko)
Inventor
제임스 토마스 도일
파쉐드 마흐모우디
아미랄리 샤얀 아라니
Original Assignee
퀄컴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20150115867A publication Critical patent/KR20150115867A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H01F5/003—Printed circuit coils
    • H01L23/645—
    • H01L28/10—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H01L2224/16225—
    • H01L2224/32225—
    • H01L2224/73204—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/24—Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
KR1020157023728A 2013-02-08 2014-01-31 기판이 빠진 이산 결합된 인덕터 구조체 Withdrawn KR20150115867A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361762555P 2013-02-08 2013-02-08
US61/762,555 2013-02-08
US13/791,388 2013-03-08
US13/791,388 US10115661B2 (en) 2013-02-08 2013-03-08 Substrate-less discrete coupled inductor structure
PCT/US2014/014270 WO2014123790A1 (en) 2013-02-08 2014-01-31 Substrate-less discrete coupled inductor structure

Publications (1)

Publication Number Publication Date
KR20150115867A true KR20150115867A (ko) 2015-10-14

Family

ID=51297097

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157023728A Withdrawn KR20150115867A (ko) 2013-02-08 2014-01-31 기판이 빠진 이산 결합된 인덕터 구조체

Country Status (7)

Country Link
US (1) US10115661B2 (https=)
EP (1) EP2954543B1 (https=)
JP (1) JP2016513364A (https=)
KR (1) KR20150115867A (https=)
CN (1) CN104969312B (https=)
TW (2) TWI600037B (https=)
WO (1) WO2014123790A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12489068B2 (en) 2021-10-15 2025-12-02 Samsung Electronics Co., Ltd. Redistribution substrate having embedded inductor

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343442B2 (en) 2012-09-20 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Passive devices in package-on-package structures and methods for forming the same
US9704739B2 (en) * 2014-07-30 2017-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device packages, packaging methods, and packaged semiconductor devices
WO2016094865A1 (en) 2014-12-11 2016-06-16 St. Jude Medical, Cardiology Division, Inc. Multi-layer sensor core
CN105489597B (zh) 2015-12-28 2018-06-15 华为技术有限公司 系统级封装模块组件、系统级封装模块及电子设备
US9761522B2 (en) * 2016-01-29 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Wireless charging package with chip integrated in coil center
EP3449502B1 (en) 2016-04-26 2021-06-30 Linear Technology LLC Mechanically-compliant and electrically and thermally conductive leadframes for component-on-package circuits
US11369431B2 (en) * 2016-06-11 2022-06-28 Boston Scientific Scimed Inc. Inductive double flat coil displacement sensor
TWI645428B (zh) * 2016-11-25 2018-12-21 瑞昱半導體股份有限公司 積體電感
US10121739B1 (en) 2017-05-02 2018-11-06 Micron Technology, Inc. Multi-die inductors with coupled through-substrate via cores
US10872843B2 (en) 2017-05-02 2020-12-22 Micron Technology, Inc. Semiconductor devices with back-side coils for wireless signal and power coupling
US10134671B1 (en) 2017-05-02 2018-11-20 Micron Technology, Inc. 3D interconnect multi-die inductors with through-substrate via cores
US20180323369A1 (en) 2017-05-02 2018-11-08 Micron Technology, Inc. Inductors with through-substrate via cores
US20180323253A1 (en) * 2017-05-02 2018-11-08 Micron Technology, Inc. Semiconductor devices with through-substrate coils for wireless signal and power coupling
US10497635B2 (en) 2018-03-27 2019-12-03 Linear Technology Holding Llc Stacked circuit package with molded base having laser drilled openings for upper package
US11410977B2 (en) 2018-11-13 2022-08-09 Analog Devices International Unlimited Company Electronic module for high power applications
US12272638B2 (en) * 2019-10-08 2025-04-08 Murata Manufacturing Co., Ltd. Integrated transformer module
US11844178B2 (en) 2020-06-02 2023-12-12 Analog Devices International Unlimited Company Electronic component
CN116013662B (zh) * 2022-12-30 2025-11-07 东莞顺络电子有限公司 一种高耦合系数电感

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147192A (ja) * 1984-01-11 1985-08-03 株式会社日立製作所 プリント配線板の製造方法
JPS6442110A (en) * 1987-08-10 1989-02-14 Hitachi Ltd Formation of conductor pattern
JPH0442110A (ja) * 1990-06-08 1992-02-12 Olympus Optical Co Ltd 不均質媒質を用いたレンズ
JPH09153406A (ja) * 1995-09-28 1997-06-10 Toshiba Corp 平面コイルおよびそれを用いた平面磁気素子およびそれらの製造方法
JP2001244123A (ja) 2000-02-28 2001-09-07 Kawatetsu Mining Co Ltd 表面実装型平面磁気素子及びその製造方法
JP2002110423A (ja) * 2000-09-28 2002-04-12 Kyocera Corp コモンモードチョークコイル
JP2002280878A (ja) 2001-03-19 2002-09-27 Alps Electric Co Ltd 電子回路ユニット
JP2003059744A (ja) * 2001-08-15 2003-02-28 Sony Corp インダクタの製造方法
JP2004039867A (ja) 2002-07-03 2004-02-05 Sony Corp 多層配線回路モジュール及びその製造方法
US20070031830A1 (en) 2002-12-09 2007-02-08 Antonio Camargo Process for the determination of the primary structure of the messenger rna coding for the human recombinant endooligopeptidase a (heopa)(af217798)...
GB0321658D0 (en) 2003-09-16 2003-10-15 South Bank Univ Entpr Ltd Bifilar transformer
US9029196B2 (en) * 2003-11-10 2015-05-12 Stats Chippac, Ltd. Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
JP4012526B2 (ja) 2004-07-01 2007-11-21 Ｔｄｋ株式会社 薄膜コイルおよびその製造方法、ならびにコイル構造体およびその製造方法
US7432794B2 (en) 2004-08-16 2008-10-07 Telefonaktiebolaget L M Ericsson (Publ) Variable integrated inductor
TWI311452B (en) 2005-03-30 2009-06-21 Advanced Semiconductor Eng Method of fabricating a device-containing substrate
US7429786B2 (en) 2005-04-29 2008-09-30 Stats Chippac Ltd. Semiconductor package including second substrate and having exposed substrate surfaces on upper and lower sides
US8368501B2 (en) 2006-06-29 2013-02-05 Intel Corporation Integrated inductors
US8212155B1 (en) 2007-06-26 2012-07-03 Wright Peter V Integrated passive device
US7841070B2 (en) * 2007-08-21 2010-11-30 Intel Corporation Method of fabricating a transformer device
US8149080B2 (en) * 2007-09-25 2012-04-03 Infineon Technologies Ag Integrated circuit including inductive device and ferromagnetic material
US7759212B2 (en) 2007-12-26 2010-07-20 Stats Chippac, Ltd. System-in-package having integrated passive devices and method therefor
US7956603B2 (en) 2008-06-16 2011-06-07 Medility Llc Sensor inductors, sensors for monitoring movements and positioning, apparatus, systems and methods therefore
US8237269B2 (en) * 2008-08-01 2012-08-07 Qualcomm Incorporated High Q transformer disposed at least partly in a non-semiconductor substrate
EP2151834A3 (en) 2008-08-05 2012-09-19 Nxp B.V. Inductor assembly
US7843047B2 (en) * 2008-11-21 2010-11-30 Stats Chippac Ltd. Encapsulant interposer system with integrated passive devices and manufacturing method therefor
WO2011033496A1 (en) * 2009-09-16 2011-03-24 Maradin Technologies Ltd. Micro coil apparatus and manufacturing methods therefor
US20120002377A1 (en) 2010-06-30 2012-01-05 William French Galvanic isolation transformer
CN102376693B (zh) * 2010-08-23 2016-05-11 香港科技大学 单片磁感应器件
JP5839535B2 (ja) 2010-10-20 2016-01-06 旭化成エレクトロニクス株式会社 平面コイル及びアクチュエータ
JP5649490B2 (ja) 2011-03-16 2015-01-07 新光電気工業株式会社 配線基板及びその製造方法
US8519506B2 (en) * 2011-06-28 2013-08-27 National Semiconductor Corporation Thermally conductive substrate for galvanic isolation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12489068B2 (en) 2021-10-15 2025-12-02 Samsung Electronics Co., Ltd. Redistribution substrate having embedded inductor

Also Published As

Publication number Publication date
JP2016513364A (ja) 2016-05-12
EP2954543A1 (en) 2015-12-16
TW201640535A (zh) 2016-11-16
TW201443940A (zh) 2014-11-16
TWI600037B (zh) 2017-09-21
US20140225700A1 (en) 2014-08-14
TWI611437B (zh) 2018-01-11
WO2014123790A1 (en) 2014-08-14
CN104969312A (zh) 2015-10-07
CN104969312B (zh) 2018-05-15
US10115661B2 (en) 2018-10-30
EP2954543B1 (en) 2020-04-29

Similar Documents

Publication Publication Date Title
TWI600037B (zh) 無基板個別耦合電感器結構、電感器結構設備及用於提供電感器結構之方法
EP2956948B1 (en) In substrate coupled inductor structure
US10256286B2 (en) Integrated inductor for integrated circuit devices
KR101880409B1 (ko) 패키지 기판에 내장된 보호 링을 갖는 자성 코어 인덕터를 포함하는 집적형 디바이스 패키지
JP6377178B2 (ja) 埋込型パッケージ基板コンデンサ
EP3345218B1 (en) Integration of inductors with advanced-node system-on-chip (soc) using glass wafer with inductors and wafer-to-wafer joining
CN106463261A (zh) 具有可配置/可控制等效串联电阻的嵌入式封装基板电容器
CN104715919B (zh) 用于制造用于芯片装置的感应芯的方法及芯片装置
US20140253279A1 (en) Coupled discrete inductor with flux concentration using high permeable material
US20220084736A1 (en) Tandem magnetics in package
US12402332B2 (en) Integrated passive devices
TW201730902A (zh) 具有被形成在核心上的線圈之電子封裝體

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000