TWI590309B - 結晶化的方法 - Google Patents
結晶化的方法 Download PDFInfo
- Publication number
- TWI590309B TWI590309B TW101129570A TW101129570A TWI590309B TW I590309 B TWI590309 B TW I590309B TW 101129570 A TW101129570 A TW 101129570A TW 101129570 A TW101129570 A TW 101129570A TW I590309 B TWI590309 B TW I590309B
- Authority
- TW
- Taiwan
- Prior art keywords
- energy
- pulse
- substrate
- laser
- processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H10P14/3816—Pulsed laser beam
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161530265P | 2011-09-01 | 2011-09-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201314745A TW201314745A (zh) | 2013-04-01 |
| TWI590309B true TWI590309B (zh) | 2017-07-01 |
Family
ID=47752087
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101129570A TWI590309B (zh) | 2011-09-01 | 2012-08-15 | 結晶化的方法 |
| TW106113879A TWI633587B (zh) | 2011-09-01 | 2012-08-15 | 結晶化的方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106113879A TWI633587B (zh) | 2011-09-01 | 2012-08-15 | 結晶化的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9373511B2 (https=) |
| JP (1) | JP6129837B2 (https=) |
| KR (2) | KR101713662B1 (https=) |
| CN (1) | CN103765564B (https=) |
| SG (2) | SG2014008858A (https=) |
| TW (2) | TWI590309B (https=) |
| WO (1) | WO2013033637A2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI590309B (zh) * | 2011-09-01 | 2017-07-01 | 應用材料股份有限公司 | 結晶化的方法 |
| WO2017120584A1 (en) * | 2016-01-08 | 2017-07-13 | The Trustees Of Columbia University In The City Of New York | Methods and systems for spot beam crystallization |
| JP7335236B2 (ja) * | 2017-10-13 | 2023-08-29 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | スポットビーム及びラインビーム結晶化のためのシステムおよび方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3213338B2 (ja) * | 1991-05-15 | 2001-10-02 | 株式会社リコー | 薄膜半導体装置の製法 |
| JP3065825B2 (ja) * | 1992-10-21 | 2000-07-17 | 株式会社半導体エネルギー研究所 | レーザー処理方法 |
| JP3669384B2 (ja) * | 1995-08-22 | 2005-07-06 | 独立行政法人理化学研究所 | 半導体基板中へのドーピング層の形成方法 |
| GB9819338D0 (en) * | 1998-09-04 | 1998-10-28 | Philips Electronics Nv | Laser crystallisation of thin films |
| JP2001110723A (ja) * | 1999-10-04 | 2001-04-20 | Matsushita Electric Ind Co Ltd | 多結晶シリコン薄膜の製造方法 |
| JP4472066B2 (ja) * | 1999-10-29 | 2010-06-02 | シャープ株式会社 | 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法 |
| JP2001319891A (ja) * | 2000-05-10 | 2001-11-16 | Nec Corp | 薄膜処理方法及び薄膜処理装置 |
| JP5201614B2 (ja) * | 2001-07-23 | 2013-06-05 | 株式会社日本製鋼所 | レーザ光の照射方法及びその装置 |
| JP3860444B2 (ja) | 2001-08-28 | 2006-12-20 | 住友重機械工業株式会社 | シリコン結晶化方法とレーザアニール装置 |
| US7470602B2 (en) * | 2002-10-29 | 2008-12-30 | Sumitomo Heavy Industries, Ltd. | Crystalline film and its manufacture method using laser |
| CN100514561C (zh) * | 2002-10-29 | 2009-07-15 | 住友重机械工业株式会社 | 利用激光制造结晶膜的方法 |
| TW200616232A (en) * | 2004-08-09 | 2006-05-16 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film |
| JP2006086447A (ja) * | 2004-09-17 | 2006-03-30 | Sharp Corp | 半導体薄膜の製造方法および半導体薄膜の製造装置 |
| US7645337B2 (en) * | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
| US8221544B2 (en) * | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
| US8148663B2 (en) * | 2007-07-31 | 2012-04-03 | Applied Materials, Inc. | Apparatus and method of improving beam shaping and beam homogenization |
| TWI528418B (zh) * | 2009-11-30 | 2016-04-01 | 應用材料股份有限公司 | 在半導體應用上的結晶處理 |
| TWI556284B (zh) * | 2009-12-31 | 2016-11-01 | 紐約市哥倫比亞大學理事會 | 非週期性脈衝連續橫向結晶之系統及方法 |
| TWI590309B (zh) * | 2011-09-01 | 2017-07-01 | 應用材料股份有限公司 | 結晶化的方法 |
-
2012
- 2012-08-15 TW TW101129570A patent/TWI590309B/zh active
- 2012-08-15 TW TW106113879A patent/TWI633587B/zh active
- 2012-08-31 SG SG2014008858A patent/SG2014008858A/en unknown
- 2012-08-31 CN CN201280041674.5A patent/CN103765564B/zh active Active
- 2012-08-31 KR KR1020147007164A patent/KR101713662B1/ko active Active
- 2012-08-31 SG SG10201607229XA patent/SG10201607229XA/en unknown
- 2012-08-31 JP JP2014528670A patent/JP6129837B2/ja active Active
- 2012-08-31 WO PCT/US2012/053527 patent/WO2013033637A2/en not_active Ceased
- 2012-08-31 KR KR1020177005829A patent/KR101888834B1/ko active Active
- 2012-08-31 US US13/601,069 patent/US9373511B2/en not_active Expired - Fee Related
-
2016
- 2016-06-19 US US15/186,499 patent/US10074538B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| SG10201607229XA (en) | 2016-10-28 |
| JP6129837B2 (ja) | 2017-05-17 |
| US9373511B2 (en) | 2016-06-21 |
| KR101888834B1 (ko) | 2018-08-16 |
| TW201314745A (zh) | 2013-04-01 |
| KR20170028450A (ko) | 2017-03-13 |
| WO2013033637A2 (en) | 2013-03-07 |
| SG2014008858A (en) | 2014-03-28 |
| TW201727712A (zh) | 2017-08-01 |
| CN103765564A (zh) | 2014-04-30 |
| US20160293414A1 (en) | 2016-10-06 |
| TWI633587B (zh) | 2018-08-21 |
| CN103765564B (zh) | 2016-09-21 |
| JP2014528162A (ja) | 2014-10-23 |
| US10074538B2 (en) | 2018-09-11 |
| KR101713662B1 (ko) | 2017-03-08 |
| WO2013033637A3 (en) | 2013-04-25 |
| KR20140060536A (ko) | 2014-05-20 |
| US20130055731A1 (en) | 2013-03-07 |
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