SG2014008858A - Crystallization methods - Google Patents

Crystallization methods

Info

Publication number
SG2014008858A
SG2014008858A SG2014008858A SG2014008858A SG2014008858A SG 2014008858 A SG2014008858 A SG 2014008858A SG 2014008858 A SG2014008858 A SG 2014008858A SG 2014008858 A SG2014008858 A SG 2014008858A SG 2014008858 A SG2014008858 A SG 2014008858A
Authority
SG
Singapore
Prior art keywords
crystallization methods
crystallization
methods
Prior art date
Application number
SG2014008858A
Other languages
English (en)
Inventor
Bruce E Adams
Aaron Muir Hunter
Stephan Moffat
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG2014008858A publication Critical patent/SG2014008858A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
SG2014008858A 2011-09-01 2012-08-31 Crystallization methods SG2014008858A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161530265P 2011-09-01 2011-09-01
PCT/US2012/053527 WO2013033637A2 (en) 2011-09-01 2012-08-31 Crystallization methods

Publications (1)

Publication Number Publication Date
SG2014008858A true SG2014008858A (en) 2014-03-28

Family

ID=47752087

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2014008858A SG2014008858A (en) 2011-09-01 2012-08-31 Crystallization methods
SG10201607229XA SG10201607229XA (en) 2011-09-01 2012-08-31 Crystallization methods

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201607229XA SG10201607229XA (en) 2011-09-01 2012-08-31 Crystallization methods

Country Status (7)

Country Link
US (2) US9373511B2 (https=)
JP (1) JP6129837B2 (https=)
KR (2) KR101888834B1 (https=)
CN (1) CN103765564B (https=)
SG (2) SG2014008858A (https=)
TW (2) TWI633587B (https=)
WO (1) WO2013033637A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI633587B (zh) * 2011-09-01 2018-08-21 應用材料股份有限公司 結晶化的方法
CN108604532B (zh) 2016-01-08 2024-03-29 纽约市哥伦比亚大学理事会 用于点波束结晶的方法和系统
JP7335236B2 (ja) * 2017-10-13 2023-08-29 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク スポットビーム及びラインビーム結晶化のためのシステムおよび方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3213338B2 (ja) * 1991-05-15 2001-10-02 株式会社リコー 薄膜半導体装置の製法
JP3065825B2 (ja) * 1992-10-21 2000-07-17 株式会社半導体エネルギー研究所 レーザー処理方法
JP3669384B2 (ja) * 1995-08-22 2005-07-06 独立行政法人理化学研究所 半導体基板中へのドーピング層の形成方法
GB9819338D0 (en) * 1998-09-04 1998-10-28 Philips Electronics Nv Laser crystallisation of thin films
JP2001110723A (ja) * 1999-10-04 2001-04-20 Matsushita Electric Ind Co Ltd 多結晶シリコン薄膜の製造方法
JP4472066B2 (ja) * 1999-10-29 2010-06-02 シャープ株式会社 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法
JP2001319891A (ja) * 2000-05-10 2001-11-16 Nec Corp 薄膜処理方法及び薄膜処理装置
JP5201614B2 (ja) * 2001-07-23 2013-06-05 株式会社日本製鋼所 レーザ光の照射方法及びその装置
JP3860444B2 (ja) 2001-08-28 2006-12-20 住友重機械工業株式会社 シリコン結晶化方法とレーザアニール装置
WO2004040628A1 (ja) * 2002-10-29 2004-05-13 Sumitomo Heavy Industries, Ltd. レーザを用いた結晶膜の製造方法及び結晶膜
US7470602B2 (en) * 2002-10-29 2008-12-30 Sumitomo Heavy Industries, Ltd. Crystalline film and its manufacture method using laser
TW200616232A (en) * 2004-08-09 2006-05-16 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
JP2006086447A (ja) * 2004-09-17 2006-03-30 Sharp Corp 半導体薄膜の製造方法および半導体薄膜の製造装置
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
TWI459444B (zh) * 2009-11-30 2014-11-01 應用材料股份有限公司 在半導體應用上的結晶處理
TWI556284B (zh) * 2009-12-31 2016-11-01 紐約市哥倫比亞大學理事會 非週期性脈衝連續橫向結晶之系統及方法
TWI633587B (zh) * 2011-09-01 2018-08-21 應用材料股份有限公司 結晶化的方法

Also Published As

Publication number Publication date
US20160293414A1 (en) 2016-10-06
TW201727712A (zh) 2017-08-01
WO2013033637A2 (en) 2013-03-07
JP2014528162A (ja) 2014-10-23
CN103765564B (zh) 2016-09-21
US20130055731A1 (en) 2013-03-07
CN103765564A (zh) 2014-04-30
KR20170028450A (ko) 2017-03-13
TWI590309B (zh) 2017-07-01
SG10201607229XA (en) 2016-10-28
KR20140060536A (ko) 2014-05-20
US9373511B2 (en) 2016-06-21
TWI633587B (zh) 2018-08-21
WO2013033637A3 (en) 2013-04-25
JP6129837B2 (ja) 2017-05-17
KR101888834B1 (ko) 2018-08-16
KR101713662B1 (ko) 2017-03-08
US10074538B2 (en) 2018-09-11
TW201314745A (zh) 2013-04-01

Similar Documents

Publication Publication Date Title
DK3798230T3 (en) Terapeutiske antistoffer
DK2691417T4 (en) Antistof fc-varianter
EP2755962A4 (en) AZAINDAZOLES
EP2754063A4 (en) EXTENSIBILITY OF THE SMB2 PROTOCOL
EP2723631A4 (en) QUADFOILER
EP2776444A4 (en) dihydropteridinones
AP2014007621A0 (en) 2-Thiopyrimidinones
PL2505243T3 (pl) Urządzenie do krystalizacji
GB201117538D0 (en) Methods
IL230760A (en) Polate saccharides are marked in f18
DK2770906T3 (en) Applanationstonometer
SG10201607229XA (en) Crystallization methods
GB201101727D0 (en) Obuoy
GB201100001D0 (en) TidySqueeze2
AU4540P (en) BUNNAN Baloskion tetraphyllum
AU5026P (en) Goldstrike Agapanthus inapertus
AU5031P (en) BESYS Beschorneria yuccoides
AU5171P (en) Sunparamiho Mandevilla xamabilis
GB201104012D0 (en) Methods
GB201108514D0 (en) Methods
GB201101969D0 (en) Methods
GB201105022D0 (en) Methods
GB201222278D0 (en) Crystallisation method
AP00723S1 (en) Autorickshaw
GB201109627D0 (en) Easy clear