CN103765564B - 结晶化的方法 - Google Patents
结晶化的方法 Download PDFInfo
- Publication number
- CN103765564B CN103765564B CN201280041674.5A CN201280041674A CN103765564B CN 103765564 B CN103765564 B CN 103765564B CN 201280041674 A CN201280041674 A CN 201280041674A CN 103765564 B CN103765564 B CN 103765564B
- Authority
- CN
- China
- Prior art keywords
- energy
- pulse
- solidification
- substrate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H10P14/3816—Pulsed laser beam
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Landscapes
- Recrystallisation Techniques (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161530265P | 2011-09-01 | 2011-09-01 | |
| US61/530,265 | 2011-09-01 | ||
| PCT/US2012/053527 WO2013033637A2 (en) | 2011-09-01 | 2012-08-31 | Crystallization methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103765564A CN103765564A (zh) | 2014-04-30 |
| CN103765564B true CN103765564B (zh) | 2016-09-21 |
Family
ID=47752087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280041674.5A Active CN103765564B (zh) | 2011-09-01 | 2012-08-31 | 结晶化的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9373511B2 (https=) |
| JP (1) | JP6129837B2 (https=) |
| KR (2) | KR101888834B1 (https=) |
| CN (1) | CN103765564B (https=) |
| SG (2) | SG2014008858A (https=) |
| TW (2) | TWI633587B (https=) |
| WO (1) | WO2013033637A2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI633587B (zh) * | 2011-09-01 | 2018-08-21 | 應用材料股份有限公司 | 結晶化的方法 |
| CN108604532B (zh) | 2016-01-08 | 2024-03-29 | 纽约市哥伦比亚大学理事会 | 用于点波束结晶的方法和系统 |
| JP7335236B2 (ja) * | 2017-10-13 | 2023-08-29 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | スポットビーム及びラインビーム結晶化のためのシステムおよび方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5304357A (en) * | 1991-05-15 | 1994-04-19 | Ricoh Co. Ltd. | Apparatus for zone melting recrystallization of thin semiconductor film |
| US20040009632A1 (en) * | 2000-05-10 | 2004-01-15 | Hiroshi Tanabe | Thin film processing method and thin film processing apparatus |
| US20090032511A1 (en) * | 2007-07-31 | 2009-02-05 | Adams Bruce E | Apparatus and method of improving beam shaping and beam homogenization |
| US20110129959A1 (en) * | 2009-11-30 | 2011-06-02 | Applied Materials, Inc. | Crystallization processing for semiconductor applications |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3065825B2 (ja) * | 1992-10-21 | 2000-07-17 | 株式会社半導体エネルギー研究所 | レーザー処理方法 |
| JP3669384B2 (ja) * | 1995-08-22 | 2005-07-06 | 独立行政法人理化学研究所 | 半導体基板中へのドーピング層の形成方法 |
| GB9819338D0 (en) * | 1998-09-04 | 1998-10-28 | Philips Electronics Nv | Laser crystallisation of thin films |
| JP2001110723A (ja) * | 1999-10-04 | 2001-04-20 | Matsushita Electric Ind Co Ltd | 多結晶シリコン薄膜の製造方法 |
| JP4472066B2 (ja) * | 1999-10-29 | 2010-06-02 | シャープ株式会社 | 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法 |
| JP5201614B2 (ja) * | 2001-07-23 | 2013-06-05 | 株式会社日本製鋼所 | レーザ光の照射方法及びその装置 |
| JP3860444B2 (ja) | 2001-08-28 | 2006-12-20 | 住友重機械工業株式会社 | シリコン結晶化方法とレーザアニール装置 |
| WO2004040628A1 (ja) * | 2002-10-29 | 2004-05-13 | Sumitomo Heavy Industries, Ltd. | レーザを用いた結晶膜の製造方法及び結晶膜 |
| US7470602B2 (en) * | 2002-10-29 | 2008-12-30 | Sumitomo Heavy Industries, Ltd. | Crystalline film and its manufacture method using laser |
| TW200616232A (en) * | 2004-08-09 | 2006-05-16 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film |
| JP2006086447A (ja) * | 2004-09-17 | 2006-03-30 | Sharp Corp | 半導体薄膜の製造方法および半導体薄膜の製造装置 |
| US7645337B2 (en) * | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
| US8221544B2 (en) * | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
| TWI556284B (zh) * | 2009-12-31 | 2016-11-01 | 紐約市哥倫比亞大學理事會 | 非週期性脈衝連續橫向結晶之系統及方法 |
| TWI633587B (zh) * | 2011-09-01 | 2018-08-21 | 應用材料股份有限公司 | 結晶化的方法 |
-
2012
- 2012-08-15 TW TW106113879A patent/TWI633587B/zh active
- 2012-08-15 TW TW101129570A patent/TWI590309B/zh active
- 2012-08-31 JP JP2014528670A patent/JP6129837B2/ja active Active
- 2012-08-31 US US13/601,069 patent/US9373511B2/en not_active Expired - Fee Related
- 2012-08-31 CN CN201280041674.5A patent/CN103765564B/zh active Active
- 2012-08-31 KR KR1020177005829A patent/KR101888834B1/ko active Active
- 2012-08-31 SG SG2014008858A patent/SG2014008858A/en unknown
- 2012-08-31 KR KR1020147007164A patent/KR101713662B1/ko active Active
- 2012-08-31 SG SG10201607229XA patent/SG10201607229XA/en unknown
- 2012-08-31 WO PCT/US2012/053527 patent/WO2013033637A2/en not_active Ceased
-
2016
- 2016-06-19 US US15/186,499 patent/US10074538B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5304357A (en) * | 1991-05-15 | 1994-04-19 | Ricoh Co. Ltd. | Apparatus for zone melting recrystallization of thin semiconductor film |
| US20040009632A1 (en) * | 2000-05-10 | 2004-01-15 | Hiroshi Tanabe | Thin film processing method and thin film processing apparatus |
| US20090032511A1 (en) * | 2007-07-31 | 2009-02-05 | Adams Bruce E | Apparatus and method of improving beam shaping and beam homogenization |
| US20110129959A1 (en) * | 2009-11-30 | 2011-06-02 | Applied Materials, Inc. | Crystallization processing for semiconductor applications |
Also Published As
| Publication number | Publication date |
|---|---|
| US20160293414A1 (en) | 2016-10-06 |
| TW201727712A (zh) | 2017-08-01 |
| WO2013033637A2 (en) | 2013-03-07 |
| JP2014528162A (ja) | 2014-10-23 |
| US20130055731A1 (en) | 2013-03-07 |
| SG2014008858A (en) | 2014-03-28 |
| CN103765564A (zh) | 2014-04-30 |
| KR20170028450A (ko) | 2017-03-13 |
| TWI590309B (zh) | 2017-07-01 |
| SG10201607229XA (en) | 2016-10-28 |
| KR20140060536A (ko) | 2014-05-20 |
| US9373511B2 (en) | 2016-06-21 |
| TWI633587B (zh) | 2018-08-21 |
| WO2013033637A3 (en) | 2013-04-25 |
| JP6129837B2 (ja) | 2017-05-17 |
| KR101888834B1 (ko) | 2018-08-16 |
| KR101713662B1 (ko) | 2017-03-08 |
| US10074538B2 (en) | 2018-09-11 |
| TW201314745A (zh) | 2013-04-01 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |