KR101888834B1 - 결정화 방법들 - Google Patents

결정화 방법들 Download PDF

Info

Publication number
KR101888834B1
KR101888834B1 KR1020177005829A KR20177005829A KR101888834B1 KR 101888834 B1 KR101888834 B1 KR 101888834B1 KR 1020177005829 A KR1020177005829 A KR 1020177005829A KR 20177005829 A KR20177005829 A KR 20177005829A KR 101888834 B1 KR101888834 B1 KR 101888834B1
Authority
KR
South Korea
Prior art keywords
substrate
energy
processing
laser
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020177005829A
Other languages
English (en)
Korean (ko)
Other versions
KR20170028450A (ko
Inventor
브루스 이. 아담스
아론 뮤어 헌터
스티븐 모파트
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20170028450A publication Critical patent/KR20170028450A/ko
Application granted granted Critical
Publication of KR101888834B1 publication Critical patent/KR101888834B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L21/02686—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H01L21/02521—
    • H01L21/02672—
    • H01L21/268—
    • H01L21/324—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Recrystallisation Techniques (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020177005829A 2011-09-01 2012-08-31 결정화 방법들 Active KR101888834B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161530265P 2011-09-01 2011-09-01
US61/530,265 2011-09-01
PCT/US2012/053527 WO2013033637A2 (en) 2011-09-01 2012-08-31 Crystallization methods

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147007164A Division KR101713662B1 (ko) 2011-09-01 2012-08-31 결정화 방법들

Publications (2)

Publication Number Publication Date
KR20170028450A KR20170028450A (ko) 2017-03-13
KR101888834B1 true KR101888834B1 (ko) 2018-08-16

Family

ID=47752087

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177005829A Active KR101888834B1 (ko) 2011-09-01 2012-08-31 결정화 방법들
KR1020147007164A Active KR101713662B1 (ko) 2011-09-01 2012-08-31 결정화 방법들

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020147007164A Active KR101713662B1 (ko) 2011-09-01 2012-08-31 결정화 방법들

Country Status (7)

Country Link
US (2) US9373511B2 (https=)
JP (1) JP6129837B2 (https=)
KR (2) KR101888834B1 (https=)
CN (1) CN103765564B (https=)
SG (2) SG2014008858A (https=)
TW (2) TWI633587B (https=)
WO (1) WO2013033637A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI633587B (zh) * 2011-09-01 2018-08-21 應用材料股份有限公司 結晶化的方法
CN108604532B (zh) 2016-01-08 2024-03-29 纽约市哥伦比亚大学理事会 用于点波束结晶的方法和系统
JP7335236B2 (ja) * 2017-10-13 2023-08-29 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク スポットビーム及びラインビーム結晶化のためのシステムおよび方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086447A (ja) 2004-09-17 2006-03-30 Sharp Corp 半導体薄膜の製造方法および半導体薄膜の製造装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3213338B2 (ja) * 1991-05-15 2001-10-02 株式会社リコー 薄膜半導体装置の製法
JP3065825B2 (ja) * 1992-10-21 2000-07-17 株式会社半導体エネルギー研究所 レーザー処理方法
JP3669384B2 (ja) * 1995-08-22 2005-07-06 独立行政法人理化学研究所 半導体基板中へのドーピング層の形成方法
GB9819338D0 (en) * 1998-09-04 1998-10-28 Philips Electronics Nv Laser crystallisation of thin films
JP2001110723A (ja) * 1999-10-04 2001-04-20 Matsushita Electric Ind Co Ltd 多結晶シリコン薄膜の製造方法
JP4472066B2 (ja) * 1999-10-29 2010-06-02 シャープ株式会社 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法
JP2001319891A (ja) * 2000-05-10 2001-11-16 Nec Corp 薄膜処理方法及び薄膜処理装置
JP5201614B2 (ja) * 2001-07-23 2013-06-05 株式会社日本製鋼所 レーザ光の照射方法及びその装置
JP3860444B2 (ja) 2001-08-28 2006-12-20 住友重機械工業株式会社 シリコン結晶化方法とレーザアニール装置
WO2004040628A1 (ja) * 2002-10-29 2004-05-13 Sumitomo Heavy Industries, Ltd. レーザを用いた結晶膜の製造方法及び結晶膜
US7470602B2 (en) * 2002-10-29 2008-12-30 Sumitomo Heavy Industries, Ltd. Crystalline film and its manufacture method using laser
TW200616232A (en) * 2004-08-09 2006-05-16 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
TWI459444B (zh) * 2009-11-30 2014-11-01 應用材料股份有限公司 在半導體應用上的結晶處理
TWI556284B (zh) * 2009-12-31 2016-11-01 紐約市哥倫比亞大學理事會 非週期性脈衝連續橫向結晶之系統及方法
TWI633587B (zh) * 2011-09-01 2018-08-21 應用材料股份有限公司 結晶化的方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086447A (ja) 2004-09-17 2006-03-30 Sharp Corp 半導体薄膜の製造方法および半導体薄膜の製造装置

Also Published As

Publication number Publication date
US20160293414A1 (en) 2016-10-06
TW201727712A (zh) 2017-08-01
WO2013033637A2 (en) 2013-03-07
JP2014528162A (ja) 2014-10-23
CN103765564B (zh) 2016-09-21
US20130055731A1 (en) 2013-03-07
SG2014008858A (en) 2014-03-28
CN103765564A (zh) 2014-04-30
KR20170028450A (ko) 2017-03-13
TWI590309B (zh) 2017-07-01
SG10201607229XA (en) 2016-10-28
KR20140060536A (ko) 2014-05-20
US9373511B2 (en) 2016-06-21
TWI633587B (zh) 2018-08-21
WO2013033637A3 (en) 2013-04-25
JP6129837B2 (ja) 2017-05-17
KR101713662B1 (ko) 2017-03-08
US10074538B2 (en) 2018-09-11
TW201314745A (zh) 2013-04-01

Similar Documents

Publication Publication Date Title
CN101971293B (zh) 用于薄膜的闪光灯退火
CN101919058B (zh) 用于制备外延纹理厚膜的系统和方法
KR101730797B1 (ko) 펄스열 어닐링 방법을 이용한 얇은 필름을 고체 상 재결정화시키는 방법
TW201125022A (en) Crystallization processing for semiconductor applications
KR101888834B1 (ko) 결정화 방법들
CN103730336A (zh) 定义多晶硅生长方向的方法
TWI801418B (zh) 處理目標材料之方法
JP2001274433A (ja) シリコン膜の結晶化方法及び多結晶シリコン膜の製造方法並びに多結晶シリコン膜を用いたディバイス
JP5756897B2 (ja) 熱処理装置
Gaiduk et al. Laser-induced melting and recrystallization of CVD grown polycrystalline Si/SiGe/Ge layers
CN120925082A (zh) 含氩晶体材料的再结晶方法
CN106702495A (zh) 一种单晶薄膜的制备方法

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20210723

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20220722

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R17 Change to representative recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R17-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 8

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000