SG10201607229XA - Crystallization methods - Google Patents

Crystallization methods

Info

Publication number
SG10201607229XA
SG10201607229XA SG10201607229XA SG10201607229XA SG10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA
Authority
SG
Singapore
Prior art keywords
crystallization methods
crystallization
methods
Prior art date
Application number
SG10201607229XA
Inventor
Bruce E Adams
Aaron Muir Hunter
Stephan Moffat
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201607229XA publication Critical patent/SG10201607229XA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686Pulsed laser beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG10201607229XA 2011-09-01 2012-08-31 Crystallization methods SG10201607229XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161530265P 2011-09-01 2011-09-01

Publications (1)

Publication Number Publication Date
SG10201607229XA true SG10201607229XA (en) 2016-10-28

Family

ID=47752087

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201607229XA SG10201607229XA (en) 2011-09-01 2012-08-31 Crystallization methods
SG2014008858A SG2014008858A (en) 2011-09-01 2012-08-31 Crystallization methods

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2014008858A SG2014008858A (en) 2011-09-01 2012-08-31 Crystallization methods

Country Status (7)

Country Link
US (2) US9373511B2 (en)
JP (1) JP6129837B2 (en)
KR (2) KR101888834B1 (en)
CN (1) CN103765564B (en)
SG (2) SG10201607229XA (en)
TW (2) TWI590309B (en)
WO (1) WO2013033637A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI590309B (en) * 2011-09-01 2017-07-01 應用材料股份有限公司 Crystallization methods
WO2017120584A1 (en) * 2016-01-08 2017-07-13 The Trustees Of Columbia University In The City Of New York Methods and systems for spot beam crystallization
WO2019075454A1 (en) * 2017-10-13 2019-04-18 The Trustees Of Columbia University In The City Of New York Systems and methods for spot beam and line beam crystallization

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3213338B2 (en) 1991-05-15 2001-10-02 株式会社リコー Manufacturing method of thin film semiconductor device
JP3065825B2 (en) * 1992-10-21 2000-07-17 株式会社半導体エネルギー研究所 Laser treatment method
JP3669384B2 (en) * 1995-08-22 2005-07-06 独立行政法人理化学研究所 Method for forming a doping layer in a semiconductor substrate
GB9819338D0 (en) * 1998-09-04 1998-10-28 Philips Electronics Nv Laser crystallisation of thin films
JP2001110723A (en) * 1999-10-04 2001-04-20 Matsushita Electric Ind Co Ltd Method for manufacturing polycrystalline silicon thin film
JP4472066B2 (en) * 1999-10-29 2010-06-02 シャープ株式会社 Crystalline semiconductor film manufacturing method, crystallization apparatus, and TFT manufacturing method
JP2001319891A (en) * 2000-05-10 2001-11-16 Nec Corp Method and apparatus for processing thin film
JP5201614B2 (en) * 2001-07-23 2013-06-05 株式会社日本製鋼所 Laser beam irradiation method and apparatus
JP3860444B2 (en) 2001-08-28 2006-12-20 住友重機械工業株式会社 Silicon crystallization method and laser annealing equipment
CN100514561C (en) * 2002-10-29 2009-07-15 住友重机械工业株式会社 Crystalline film and its manufacture method using laser
US7470602B2 (en) * 2002-10-29 2008-12-30 Sumitomo Heavy Industries, Ltd. Crystalline film and its manufacture method using laser
TW200616232A (en) * 2004-08-09 2006-05-16 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
JP2006086447A (en) * 2004-09-17 2006-03-30 Sharp Corp Method and apparatus for manufacturing semiconductor thin film
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
TWI528418B (en) * 2009-11-30 2016-04-01 應用材料股份有限公司 Crystallization processing for semiconductor applications
TWI556284B (en) * 2009-12-31 2016-11-01 紐約市哥倫比亞大學理事會 Systems and methods for non-periodic pulse sequential lateral solidification
TWI590309B (en) * 2011-09-01 2017-07-01 應用材料股份有限公司 Crystallization methods

Also Published As

Publication number Publication date
KR20170028450A (en) 2017-03-13
TW201727712A (en) 2017-08-01
CN103765564B (en) 2016-09-21
SG2014008858A (en) 2014-03-28
CN103765564A (en) 2014-04-30
US20160293414A1 (en) 2016-10-06
TWI633587B (en) 2018-08-21
KR20140060536A (en) 2014-05-20
KR101713662B1 (en) 2017-03-08
JP6129837B2 (en) 2017-05-17
WO2013033637A3 (en) 2013-04-25
US10074538B2 (en) 2018-09-11
JP2014528162A (en) 2014-10-23
US20130055731A1 (en) 2013-03-07
KR101888834B1 (en) 2018-08-16
WO2013033637A2 (en) 2013-03-07
US9373511B2 (en) 2016-06-21
TW201314745A (en) 2013-04-01
TWI590309B (en) 2017-07-01

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