SG10201607229XA - Crystallization methods - Google Patents
Crystallization methodsInfo
- Publication number
- SG10201607229XA SG10201607229XA SG10201607229XA SG10201607229XA SG10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA SG 10201607229X A SG10201607229X A SG 10201607229XA
- Authority
- SG
- Singapore
- Prior art keywords
- crystallization methods
- crystallization
- methods
- Prior art date
Links
- 238000002425 crystallisation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161530265P | 2011-09-01 | 2011-09-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201607229XA true SG10201607229XA (en) | 2016-10-28 |
Family
ID=47752087
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201607229XA SG10201607229XA (en) | 2011-09-01 | 2012-08-31 | Crystallization methods |
SG2014008858A SG2014008858A (en) | 2011-09-01 | 2012-08-31 | Crystallization methods |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2014008858A SG2014008858A (en) | 2011-09-01 | 2012-08-31 | Crystallization methods |
Country Status (7)
Country | Link |
---|---|
US (2) | US9373511B2 (en) |
JP (1) | JP6129837B2 (en) |
KR (2) | KR101888834B1 (en) |
CN (1) | CN103765564B (en) |
SG (2) | SG10201607229XA (en) |
TW (2) | TWI590309B (en) |
WO (1) | WO2013033637A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI590309B (en) * | 2011-09-01 | 2017-07-01 | 應用材料股份有限公司 | Crystallization methods |
WO2017120584A1 (en) * | 2016-01-08 | 2017-07-13 | The Trustees Of Columbia University In The City Of New York | Methods and systems for spot beam crystallization |
WO2019075454A1 (en) * | 2017-10-13 | 2019-04-18 | The Trustees Of Columbia University In The City Of New York | Systems and methods for spot beam and line beam crystallization |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3213338B2 (en) | 1991-05-15 | 2001-10-02 | 株式会社リコー | Manufacturing method of thin film semiconductor device |
JP3065825B2 (en) * | 1992-10-21 | 2000-07-17 | 株式会社半導体エネルギー研究所 | Laser treatment method |
JP3669384B2 (en) * | 1995-08-22 | 2005-07-06 | 独立行政法人理化学研究所 | Method for forming a doping layer in a semiconductor substrate |
GB9819338D0 (en) * | 1998-09-04 | 1998-10-28 | Philips Electronics Nv | Laser crystallisation of thin films |
JP2001110723A (en) * | 1999-10-04 | 2001-04-20 | Matsushita Electric Ind Co Ltd | Method for manufacturing polycrystalline silicon thin film |
JP4472066B2 (en) * | 1999-10-29 | 2010-06-02 | シャープ株式会社 | Crystalline semiconductor film manufacturing method, crystallization apparatus, and TFT manufacturing method |
JP2001319891A (en) * | 2000-05-10 | 2001-11-16 | Nec Corp | Method and apparatus for processing thin film |
JP5201614B2 (en) * | 2001-07-23 | 2013-06-05 | 株式会社日本製鋼所 | Laser beam irradiation method and apparatus |
JP3860444B2 (en) | 2001-08-28 | 2006-12-20 | 住友重機械工業株式会社 | Silicon crystallization method and laser annealing equipment |
CN100514561C (en) * | 2002-10-29 | 2009-07-15 | 住友重机械工业株式会社 | Crystalline film and its manufacture method using laser |
US7470602B2 (en) * | 2002-10-29 | 2008-12-30 | Sumitomo Heavy Industries, Ltd. | Crystalline film and its manufacture method using laser |
TW200616232A (en) * | 2004-08-09 | 2006-05-16 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film |
JP2006086447A (en) * | 2004-09-17 | 2006-03-30 | Sharp Corp | Method and apparatus for manufacturing semiconductor thin film |
US7645337B2 (en) * | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
US8221544B2 (en) * | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
US8148663B2 (en) * | 2007-07-31 | 2012-04-03 | Applied Materials, Inc. | Apparatus and method of improving beam shaping and beam homogenization |
TWI528418B (en) * | 2009-11-30 | 2016-04-01 | 應用材料股份有限公司 | Crystallization processing for semiconductor applications |
TWI556284B (en) * | 2009-12-31 | 2016-11-01 | 紐約市哥倫比亞大學理事會 | Systems and methods for non-periodic pulse sequential lateral solidification |
TWI590309B (en) * | 2011-09-01 | 2017-07-01 | 應用材料股份有限公司 | Crystallization methods |
-
2012
- 2012-08-15 TW TW101129570A patent/TWI590309B/en active
- 2012-08-15 TW TW106113879A patent/TWI633587B/en active
- 2012-08-31 CN CN201280041674.5A patent/CN103765564B/en active Active
- 2012-08-31 WO PCT/US2012/053527 patent/WO2013033637A2/en active Application Filing
- 2012-08-31 SG SG10201607229XA patent/SG10201607229XA/en unknown
- 2012-08-31 KR KR1020177005829A patent/KR101888834B1/en active IP Right Grant
- 2012-08-31 KR KR1020147007164A patent/KR101713662B1/en active IP Right Grant
- 2012-08-31 US US13/601,069 patent/US9373511B2/en not_active Expired - Fee Related
- 2012-08-31 JP JP2014528670A patent/JP6129837B2/en active Active
- 2012-08-31 SG SG2014008858A patent/SG2014008858A/en unknown
-
2016
- 2016-06-19 US US15/186,499 patent/US10074538B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20170028450A (en) | 2017-03-13 |
TW201727712A (en) | 2017-08-01 |
CN103765564B (en) | 2016-09-21 |
SG2014008858A (en) | 2014-03-28 |
CN103765564A (en) | 2014-04-30 |
US20160293414A1 (en) | 2016-10-06 |
TWI633587B (en) | 2018-08-21 |
KR20140060536A (en) | 2014-05-20 |
KR101713662B1 (en) | 2017-03-08 |
JP6129837B2 (en) | 2017-05-17 |
WO2013033637A3 (en) | 2013-04-25 |
US10074538B2 (en) | 2018-09-11 |
JP2014528162A (en) | 2014-10-23 |
US20130055731A1 (en) | 2013-03-07 |
KR101888834B1 (en) | 2018-08-16 |
WO2013033637A2 (en) | 2013-03-07 |
US9373511B2 (en) | 2016-06-21 |
TW201314745A (en) | 2013-04-01 |
TWI590309B (en) | 2017-07-01 |
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