KR101713662B1 - 결정화 방법들 - Google Patents

결정화 방법들 Download PDF

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KR101713662B1
KR101713662B1 KR1020147007164A KR20147007164A KR101713662B1 KR 101713662 B1 KR101713662 B1 KR 101713662B1 KR 1020147007164 A KR1020147007164 A KR 1020147007164A KR 20147007164 A KR20147007164 A KR 20147007164A KR 101713662 B1 KR101713662 B1 KR 101713662B1
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energy
substrate
laser
pulse
region
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Korean (ko)
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KR20140060536A (ko
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브루스 이. 아담스
아론 뮤어 헌터
스티븐 모파트
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020147007164A 2011-09-01 2012-08-31 결정화 방법들 Active KR101713662B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161530265P 2011-09-01 2011-09-01
US61/530,265 2011-09-01
PCT/US2012/053527 WO2013033637A2 (en) 2011-09-01 2012-08-31 Crystallization methods

Related Child Applications (1)

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KR1020177005829A Division KR101888834B1 (ko) 2011-09-01 2012-08-31 결정화 방법들

Publications (2)

Publication Number Publication Date
KR20140060536A KR20140060536A (ko) 2014-05-20
KR101713662B1 true KR101713662B1 (ko) 2017-03-08

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Family Applications (2)

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KR1020147007164A Active KR101713662B1 (ko) 2011-09-01 2012-08-31 결정화 방법들
KR1020177005829A Active KR101888834B1 (ko) 2011-09-01 2012-08-31 결정화 방법들

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177005829A Active KR101888834B1 (ko) 2011-09-01 2012-08-31 결정화 방법들

Country Status (7)

Country Link
US (2) US9373511B2 (https=)
JP (1) JP6129837B2 (https=)
KR (2) KR101713662B1 (https=)
CN (1) CN103765564B (https=)
SG (2) SG2014008858A (https=)
TW (2) TWI590309B (https=)
WO (1) WO2013033637A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI590309B (zh) * 2011-09-01 2017-07-01 應用材料股份有限公司 結晶化的方法
WO2017120584A1 (en) * 2016-01-08 2017-07-13 The Trustees Of Columbia University In The City Of New York Methods and systems for spot beam crystallization
JP7335236B2 (ja) * 2017-10-13 2023-08-29 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク スポットビーム及びラインビーム結晶化のためのシステムおよび方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319891A (ja) 2000-05-10 2001-11-16 Nec Corp 薄膜処理方法及び薄膜処理装置
JP2002524874A (ja) 1998-09-04 2002-08-06 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 薄い半導体膜の二重パルスレーザー結晶化
JP2003037079A (ja) 2001-07-23 2003-02-07 Japan Steel Works Ltd:The レーザ光の照射方法及びその装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3213338B2 (ja) * 1991-05-15 2001-10-02 株式会社リコー 薄膜半導体装置の製法
JP3065825B2 (ja) * 1992-10-21 2000-07-17 株式会社半導体エネルギー研究所 レーザー処理方法
JP3669384B2 (ja) * 1995-08-22 2005-07-06 独立行政法人理化学研究所 半導体基板中へのドーピング層の形成方法
JP2001110723A (ja) * 1999-10-04 2001-04-20 Matsushita Electric Ind Co Ltd 多結晶シリコン薄膜の製造方法
JP4472066B2 (ja) * 1999-10-29 2010-06-02 シャープ株式会社 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法
JP3860444B2 (ja) 2001-08-28 2006-12-20 住友重機械工業株式会社 シリコン結晶化方法とレーザアニール装置
US7470602B2 (en) * 2002-10-29 2008-12-30 Sumitomo Heavy Industries, Ltd. Crystalline film and its manufacture method using laser
CN100514561C (zh) * 2002-10-29 2009-07-15 住友重机械工业株式会社 利用激光制造结晶膜的方法
TW200616232A (en) * 2004-08-09 2006-05-16 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
JP2006086447A (ja) * 2004-09-17 2006-03-30 Sharp Corp 半導体薄膜の製造方法および半導体薄膜の製造装置
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
TWI528418B (zh) * 2009-11-30 2016-04-01 應用材料股份有限公司 在半導體應用上的結晶處理
TWI556284B (zh) * 2009-12-31 2016-11-01 紐約市哥倫比亞大學理事會 非週期性脈衝連續橫向結晶之系統及方法
TWI590309B (zh) * 2011-09-01 2017-07-01 應用材料股份有限公司 結晶化的方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002524874A (ja) 1998-09-04 2002-08-06 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 薄い半導体膜の二重パルスレーザー結晶化
JP2001319891A (ja) 2000-05-10 2001-11-16 Nec Corp 薄膜処理方法及び薄膜処理装置
JP2003037079A (ja) 2001-07-23 2003-02-07 Japan Steel Works Ltd:The レーザ光の照射方法及びその装置

Also Published As

Publication number Publication date
SG10201607229XA (en) 2016-10-28
JP6129837B2 (ja) 2017-05-17
US9373511B2 (en) 2016-06-21
KR101888834B1 (ko) 2018-08-16
TW201314745A (zh) 2013-04-01
KR20170028450A (ko) 2017-03-13
WO2013033637A2 (en) 2013-03-07
SG2014008858A (en) 2014-03-28
TW201727712A (zh) 2017-08-01
CN103765564A (zh) 2014-04-30
US20160293414A1 (en) 2016-10-06
TWI633587B (zh) 2018-08-21
CN103765564B (zh) 2016-09-21
TWI590309B (zh) 2017-07-01
JP2014528162A (ja) 2014-10-23
US10074538B2 (en) 2018-09-11
WO2013033637A3 (en) 2013-04-25
KR20140060536A (ko) 2014-05-20
US20130055731A1 (en) 2013-03-07

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