TWI579909B - 基板液體處理方法、基板液體處理裝置及記憶媒體 - Google Patents
基板液體處理方法、基板液體處理裝置及記憶媒體 Download PDFInfo
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- TWI579909B TWI579909B TW103108499A TW103108499A TWI579909B TW I579909 B TWI579909 B TW I579909B TW 103108499 A TW103108499 A TW 103108499A TW 103108499 A TW103108499 A TW 103108499A TW I579909 B TWI579909 B TW I579909B
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- 239000007788 liquid Substances 0.000 title claims description 482
- 239000000758 substrate Substances 0.000 title claims description 205
- 238000012545 processing Methods 0.000 title claims description 92
- 238000003672 processing method Methods 0.000 title claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 67
- 230000007246 mechanism Effects 0.000 claims description 58
- 239000000126 substance Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 31
- 239000002826 coolant Substances 0.000 claims description 21
- 239000003960 organic solvent Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000009833 condensation Methods 0.000 claims description 5
- 230000005494 condensation Effects 0.000 claims description 5
- 230000002209 hydrophobic effect Effects 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000000110 cooling liquid Substances 0.000 claims 1
- 238000002474 experimental method Methods 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 238000004140 cleaning Methods 0.000 description 68
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 54
- 239000007789 gas Substances 0.000 description 31
- 238000001035 drying Methods 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 239000002245 particle Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
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- 239000005871 repellent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VLNUTKMHYLQCQB-UHFFFAOYSA-N 2,2-dimethylpentan-3-one Chemical compound CCC(=O)C(C)(C)C VLNUTKMHYLQCQB-UHFFFAOYSA-N 0.000 description 1
- HPCIXPCAAKYXOL-UHFFFAOYSA-N CN(C)C(C(C)(C)C)CCCCCCCC Chemical compound CN(C)C(C(C)(C)C)CCCCCCCC HPCIXPCAAKYXOL-UHFFFAOYSA-N 0.000 description 1
- MLTOIJUGARZAAC-UHFFFAOYSA-N N,N,2-trimethylundecan-2-amine Chemical compound CN(C)C(CCCCCCCCC)(C)C MLTOIJUGARZAAC-UHFFFAOYSA-N 0.000 description 1
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000035622 drinking Effects 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013053579 | 2013-03-15 | ||
| JP2014008085A JP6223839B2 (ja) | 2013-03-15 | 2014-01-20 | 基板液処理方法、基板液処理装置および記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201448018A TW201448018A (zh) | 2014-12-16 |
| TWI579909B true TWI579909B (zh) | 2017-04-21 |
Family
ID=51521868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103108499A TWI579909B (zh) | 2013-03-15 | 2014-03-11 | 基板液體處理方法、基板液體處理裝置及記憶媒體 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20140261570A1 (enExample) |
| JP (1) | JP6223839B2 (enExample) |
| KR (1) | KR102159840B1 (enExample) |
| TW (1) | TWI579909B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5779168B2 (ja) * | 2012-12-04 | 2015-09-16 | 東京エレクトロン株式会社 | 周縁部塗布装置、周縁部塗布方法及び周縁部塗布用記録媒体 |
| JP6341035B2 (ja) * | 2014-09-25 | 2018-06-13 | 東京エレクトロン株式会社 | 基板液処理方法、基板液処理装置、及び記憶媒体 |
| JP6410694B2 (ja) * | 2014-10-21 | 2018-10-24 | 東京エレクトロン株式会社 | 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
| KR20160057966A (ko) | 2014-11-14 | 2016-05-24 | 가부시끼가이샤 도시바 | 처리 장치, 노즐 및 다이싱 장치 |
| US9627259B2 (en) | 2014-11-14 | 2017-04-18 | Kabushiki Kaisha Toshiba | Device manufacturing method and device |
| JP6305355B2 (ja) | 2015-01-28 | 2018-04-04 | 株式会社東芝 | デバイスの製造方法 |
| JP6462462B2 (ja) | 2015-04-01 | 2019-01-30 | 東芝メモリ株式会社 | 基板処理装置および基板処理方法 |
| JP6545511B2 (ja) * | 2015-04-10 | 2019-07-17 | 株式会社東芝 | 処理装置 |
| JP6740028B2 (ja) * | 2015-07-29 | 2020-08-12 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
| JP6404189B2 (ja) * | 2015-08-07 | 2018-10-10 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法及び記憶媒体 |
| JP6573520B2 (ja) * | 2015-09-29 | 2019-09-11 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP6588819B2 (ja) * | 2015-12-24 | 2019-10-09 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| KR101817211B1 (ko) * | 2016-05-27 | 2018-01-11 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| KR20180003109A (ko) * | 2016-06-30 | 2018-01-09 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| JP6765878B2 (ja) * | 2016-07-06 | 2020-10-07 | 東京エレクトロン株式会社 | 基板液処理方法及び基板液処理装置 |
| JP2018129476A (ja) * | 2017-02-10 | 2018-08-16 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP6925872B2 (ja) * | 2017-05-31 | 2021-08-25 | 東京エレクトロン株式会社 | 基板液処理装置、処理液供給方法及び記憶媒体 |
| KR101994420B1 (ko) * | 2018-10-11 | 2019-07-01 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| JP7301662B2 (ja) * | 2019-07-29 | 2023-07-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| KR20230010693A (ko) * | 2020-05-15 | 2023-01-19 | 가부시키가이샤 에바라 세이사꾸쇼 | 세정 장치 및 세정 방법 |
| KR102583342B1 (ko) * | 2020-10-22 | 2023-09-26 | 세메스 주식회사 | 기판 처리 장치 |
| JP7536671B2 (ja) * | 2021-01-29 | 2024-08-20 | キオクシア株式会社 | 基板処理装置 |
| CN113035742B (zh) * | 2021-02-10 | 2022-03-11 | 江苏亚电科技有限公司 | 一种半导体制造用晶圆清洗回收装置 |
| KR102571748B1 (ko) * | 2021-05-04 | 2023-08-25 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| JP2024078843A (ja) * | 2022-11-30 | 2024-06-11 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| WO2025120716A1 (ja) * | 2023-12-04 | 2025-06-12 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理システム |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021924A (en) * | 1988-09-19 | 1991-06-04 | Hitachi, Ltd. | Semiconductor cooling device |
| US20100051055A1 (en) * | 2008-08-29 | 2010-03-04 | Hiroaki Takahashi | Substrate processing apparatus and substrate processing method |
| US20100203250A1 (en) * | 2009-02-06 | 2010-08-12 | Tokyo Electron Limited | Developing device, developing method and storage medium |
| US20110200952A1 (en) * | 2010-02-15 | 2011-08-18 | Tokyo Electron Limited | Developing apparatus, developing method and storage medium |
| US20120218531A1 (en) * | 2011-02-24 | 2012-08-30 | Tokyo Electron Limited | Developing method and apparatus using organic-solvent containing developer |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251417A (ja) * | 1992-03-06 | 1993-09-28 | Babcock Hitachi Kk | 洗浄装置 |
| JP3892792B2 (ja) * | 2001-11-02 | 2007-03-14 | 大日本スクリーン製造株式会社 | 基板処理装置および基板洗浄装置 |
| US20030148624A1 (en) * | 2002-01-31 | 2003-08-07 | Kazuto Ikemoto | Method for removing resists |
| JP2004006672A (ja) * | 2002-04-19 | 2004-01-08 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| JP4312997B2 (ja) * | 2002-06-04 | 2009-08-12 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及びノズル |
| JP2004335923A (ja) * | 2003-05-12 | 2004-11-25 | Sony Corp | エッチング方法およびエッチング装置 |
| US7622338B2 (en) * | 2004-08-31 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4324527B2 (ja) * | 2004-09-09 | 2009-09-02 | 東京エレクトロン株式会社 | 基板洗浄方法及び現像装置 |
| US20060286804A1 (en) * | 2005-06-15 | 2006-12-21 | Chuan-Yi Wu | Method for forming patterned material layer |
| JP4527660B2 (ja) * | 2005-06-23 | 2010-08-18 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP4901650B2 (ja) | 2007-08-31 | 2012-03-21 | 東京エレクトロン株式会社 | 液処理装置、液処理方法および記憶媒体 |
| JP4949338B2 (ja) * | 2008-08-06 | 2012-06-06 | 東京エレクトロン株式会社 | 液処理装置 |
-
2014
- 2014-01-20 JP JP2014008085A patent/JP6223839B2/ja active Active
- 2014-02-21 US US14/186,131 patent/US20140261570A1/en not_active Abandoned
- 2014-02-27 KR KR1020140023586A patent/KR102159840B1/ko active Active
- 2014-03-11 TW TW103108499A patent/TWI579909B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021924A (en) * | 1988-09-19 | 1991-06-04 | Hitachi, Ltd. | Semiconductor cooling device |
| US20100051055A1 (en) * | 2008-08-29 | 2010-03-04 | Hiroaki Takahashi | Substrate processing apparatus and substrate processing method |
| US20100203250A1 (en) * | 2009-02-06 | 2010-08-12 | Tokyo Electron Limited | Developing device, developing method and storage medium |
| US20110200952A1 (en) * | 2010-02-15 | 2011-08-18 | Tokyo Electron Limited | Developing apparatus, developing method and storage medium |
| US20120218531A1 (en) * | 2011-02-24 | 2012-08-30 | Tokyo Electron Limited | Developing method and apparatus using organic-solvent containing developer |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140261570A1 (en) | 2014-09-18 |
| KR102159840B1 (ko) | 2020-09-24 |
| JP2014199917A (ja) | 2014-10-23 |
| JP6223839B2 (ja) | 2017-11-01 |
| TW201448018A (zh) | 2014-12-16 |
| KR20140113348A (ko) | 2014-09-24 |
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