TWI575775B - 發光裝置及發光裝置封裝 - Google Patents
發光裝置及發光裝置封裝 Download PDFInfo
- Publication number
- TWI575775B TWI575775B TW101139757A TW101139757A TWI575775B TW I575775 B TWI575775 B TW I575775B TW 101139757 A TW101139757 A TW 101139757A TW 101139757 A TW101139757 A TW 101139757A TW I575775 B TWI575775 B TW I575775B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- layer
- disposed
- emitting
- light emitting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110111308A KR101888604B1 (ko) | 2011-10-28 | 2011-10-28 | 발광 소자 및 발광 소자 패키지 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201318214A TW201318214A (zh) | 2013-05-01 |
| TWI575775B true TWI575775B (zh) | 2017-03-21 |
Family
ID=47115528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101139757A TWI575775B (zh) | 2011-10-28 | 2012-10-26 | 發光裝置及發光裝置封裝 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9165977B2 (https=) |
| EP (1) | EP2587542B1 (https=) |
| JP (1) | JP6133040B2 (https=) |
| KR (1) | KR101888604B1 (https=) |
| CN (1) | CN103094435B (https=) |
| TW (1) | TWI575775B (https=) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9666764B2 (en) * | 2012-04-09 | 2017-05-30 | Cree, Inc. | Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die |
| US10388690B2 (en) | 2012-08-07 | 2019-08-20 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| US10804316B2 (en) * | 2012-08-07 | 2020-10-13 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| JP2014127565A (ja) * | 2012-12-26 | 2014-07-07 | Toyoda Gosei Co Ltd | 半導体発光素子 |
| CN103390713B (zh) * | 2013-07-19 | 2016-04-13 | 深圳大道半导体有限公司 | 带光反射层的半导体发光器件 |
| US9847457B2 (en) | 2013-07-29 | 2017-12-19 | Seoul Viosys Co., Ltd. | Light emitting diode, method of fabricating the same and LED module having the same |
| WO2015016561A1 (en) * | 2013-07-29 | 2015-02-05 | Seoul Viosys Co., Ltd. | Light emitting diode, method of fabricating the same and led module having the same |
| TWI597864B (zh) | 2013-08-27 | 2017-09-01 | 晶元光電股份有限公司 | 具有複數個發光結構之發光元件 |
| TWI678001B (zh) * | 2013-08-27 | 2019-11-21 | 晶元光電股份有限公司 | 具有複數個發光結構之發光元件 |
| CN104425538B (zh) * | 2013-09-03 | 2019-05-03 | 晶元光电股份有限公司 | 具有多个发光结构的发光元件 |
| TWI478387B (zh) * | 2013-10-23 | 2015-03-21 | 隆達電子股份有限公司 | 發光二極體結構 |
| KR102156376B1 (ko) * | 2014-02-21 | 2020-09-15 | 엘지이노텍 주식회사 | 발광 소자 |
| KR102156375B1 (ko) * | 2014-02-21 | 2020-09-16 | 엘지이노텍 주식회사 | 발광 소자 |
| KR102162437B1 (ko) * | 2014-05-15 | 2020-10-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 발광 소자 패키지 |
| WO2015190817A1 (ko) * | 2014-06-10 | 2015-12-17 | 주식회사 세미콘라이트 | 반도체 발광소자 |
| KR101888608B1 (ko) | 2014-10-17 | 2018-09-20 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 조명 장치 |
| WO2016177333A1 (zh) * | 2015-05-05 | 2016-11-10 | 湘能华磊光电股份有限公司 | Iii族半导体发光器件倒装结构的制作方法 |
| DE102015112538B4 (de) | 2015-07-30 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements |
| US9806152B2 (en) * | 2016-03-04 | 2017-10-31 | Pakal Technologies Llc | Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base |
| KR101760317B1 (ko) * | 2016-05-02 | 2017-07-21 | 순천대학교 산학협력단 | 발광장치 |
| EP3490012B1 (en) * | 2016-07-20 | 2023-09-06 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device |
| KR102550007B1 (ko) * | 2016-11-30 | 2023-07-03 | 서울바이오시스 주식회사 | 복수의 발광셀들을 가지는 발광 다이오드 |
| KR20180073866A (ko) * | 2016-12-23 | 2018-07-03 | 엘지이노텍 주식회사 | 반도체 소자 |
| KR102737500B1 (ko) * | 2016-12-27 | 2024-12-04 | 삼성전자주식회사 | 발광소자 패키지 |
| CN109256446B (zh) * | 2017-07-13 | 2022-02-08 | 晶元光电股份有限公司 | 发光元件 |
| US11552057B2 (en) | 2017-12-20 | 2023-01-10 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US11355549B2 (en) | 2017-12-29 | 2022-06-07 | Lumileds Llc | High density interconnect for segmented LEDs |
| DE102018101393A1 (de) * | 2018-01-23 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
| JP6717324B2 (ja) * | 2018-02-27 | 2020-07-01 | 日亜化学工業株式会社 | 発光素子 |
| TWI818070B (zh) * | 2019-08-30 | 2023-10-11 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| JP7339559B2 (ja) * | 2021-05-20 | 2023-09-06 | 日亜化学工業株式会社 | 発光素子 |
| JP7784328B2 (ja) * | 2022-03-08 | 2025-12-11 | スタンレー電気株式会社 | 半導体発光素子、半導体発光装置及び半導体発光装置モジュール |
| WO2025097375A1 (en) * | 2023-11-09 | 2025-05-15 | Jade Bird Display (shanghai) Limited | Micro led and micro led display panel |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100140635A1 (en) * | 2008-12-08 | 2010-06-10 | Cree, Inc. | Composite high reflectivity layer |
| WO2010132139A1 (en) * | 2009-05-11 | 2010-11-18 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
| EP2374162A1 (en) * | 2008-12-08 | 2011-10-12 | Cree, Inc. | Light emitting diode with improved light extraction |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5996221A (en) * | 1996-12-12 | 1999-12-07 | Lucent Technologies Inc. | Method for thermocompression bonding structures |
| US6573537B1 (en) * | 1999-12-22 | 2003-06-03 | Lumileds Lighting, U.S., Llc | Highly reflective ohmic contacts to III-nitride flip-chip LEDs |
| WO2005062389A2 (en) * | 2003-12-24 | 2005-07-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device |
| JP3802911B2 (ja) * | 2004-09-13 | 2006-08-02 | ローム株式会社 | 半導体発光装置 |
| WO2006098545A2 (en) * | 2004-12-14 | 2006-09-21 | Seoul Opto Device Co., Ltd. | Light emitting device having a plurality of light emitting cells and package mounting the same |
| KR100974923B1 (ko) * | 2007-03-19 | 2010-08-10 | 서울옵토디바이스주식회사 | 발광 다이오드 |
| JP5485868B2 (ja) * | 2007-04-02 | 2014-05-07 | コーニンクレッカ フィリップス エヌ ヴェ | 発光ダイオードの駆動方法 |
| US8536584B2 (en) * | 2007-11-14 | 2013-09-17 | Cree, Inc. | High voltage wire bond free LEDS |
| KR101428053B1 (ko) * | 2007-12-13 | 2014-08-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| TWI466266B (zh) * | 2009-02-24 | 2014-12-21 | 晶元光電股份有限公司 | 陣列式發光元件及其裝置 |
| JP5614938B2 (ja) * | 2009-02-26 | 2014-10-29 | 日亜化学工業株式会社 | 半導体発光素子 |
| US9093293B2 (en) * | 2009-04-06 | 2015-07-28 | Cree, Inc. | High voltage low current surface emitting light emitting diode |
| US8476668B2 (en) * | 2009-04-06 | 2013-07-02 | Cree, Inc. | High voltage low current surface emitting LED |
| JP5246199B2 (ja) * | 2010-03-31 | 2013-07-24 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
| KR101106151B1 (ko) * | 2009-12-31 | 2012-01-20 | 서울옵토디바이스주식회사 | 발광 소자 및 그것을 제조하는 방법 |
| JP5793292B2 (ja) * | 2010-02-17 | 2015-10-14 | 豊田合成株式会社 | 半導体発光素子 |
| JP5494005B2 (ja) * | 2010-02-26 | 2014-05-14 | 豊田合成株式会社 | 半導体発光素子 |
| CN102859726B (zh) * | 2010-04-06 | 2015-09-16 | 首尔伟傲世有限公司 | 发光二极管及其制造方法 |
| JP2012028749A (ja) * | 2010-07-22 | 2012-02-09 | Seoul Opto Devices Co Ltd | 発光ダイオード |
| TW201238043A (en) * | 2011-03-11 | 2012-09-16 | Chi Mei Lighting Tech Corp | Light-emitting diode device and method for manufacturing the same |
| KR101115539B1 (ko) * | 2011-06-10 | 2012-02-28 | 서울옵토디바이스주식회사 | 발광 소자 및 그것을 제조하는 방법 |
| US8759847B2 (en) * | 2011-12-22 | 2014-06-24 | Bridgelux, Inc. | White LED assembly with LED string and intermediate node substrate terminals |
| US9276166B2 (en) * | 2012-04-13 | 2016-03-01 | Epistar Corporation | Method for forming light-emitting device |
-
2011
- 2011-10-28 KR KR1020110111308A patent/KR101888604B1/ko active Active
-
2012
- 2012-10-26 JP JP2012237130A patent/JP6133040B2/ja active Active
- 2012-10-26 TW TW101139757A patent/TWI575775B/zh active
- 2012-10-26 US US13/662,348 patent/US9165977B2/en active Active
- 2012-10-26 EP EP12190234.0A patent/EP2587542B1/en active Active
- 2012-10-29 CN CN201210421187.3A patent/CN103094435B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100140635A1 (en) * | 2008-12-08 | 2010-06-10 | Cree, Inc. | Composite high reflectivity layer |
| EP2374162A1 (en) * | 2008-12-08 | 2011-10-12 | Cree, Inc. | Light emitting diode with improved light extraction |
| WO2010132139A1 (en) * | 2009-05-11 | 2010-11-18 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013098562A (ja) | 2013-05-20 |
| US9165977B2 (en) | 2015-10-20 |
| US20130105845A1 (en) | 2013-05-02 |
| CN103094435B (zh) | 2017-04-26 |
| EP2587542B1 (en) | 2018-02-28 |
| TW201318214A (zh) | 2013-05-01 |
| JP6133040B2 (ja) | 2017-05-24 |
| KR101888604B1 (ko) | 2018-08-14 |
| KR20130046754A (ko) | 2013-05-08 |
| CN103094435A (zh) | 2013-05-08 |
| EP2587542A1 (en) | 2013-05-01 |
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