KR101888604B1 - 발광 소자 및 발광 소자 패키지 - Google Patents

발광 소자 및 발광 소자 패키지 Download PDF

Info

Publication number
KR101888604B1
KR101888604B1 KR1020110111308A KR20110111308A KR101888604B1 KR 101888604 B1 KR101888604 B1 KR 101888604B1 KR 1020110111308 A KR1020110111308 A KR 1020110111308A KR 20110111308 A KR20110111308 A KR 20110111308A KR 101888604 B1 KR101888604 B1 KR 101888604B1
Authority
KR
South Korea
Prior art keywords
light emitting
layer
disposed
bragg reflection
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020110111308A
Other languages
English (en)
Korean (ko)
Other versions
KR20130046754A (ko
Inventor
김성균
주현승
홍기석
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1020110111308A priority Critical patent/KR101888604B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to EP12190234.0A priority patent/EP2587542B1/en
Priority to US13/662,348 priority patent/US9165977B2/en
Priority to TW101139757A priority patent/TWI575775B/zh
Priority to JP2012237130A priority patent/JP6133040B2/ja
Priority to CN201210421187.3A priority patent/CN103094435B/zh
Publication of KR20130046754A publication Critical patent/KR20130046754A/ko
Application granted granted Critical
Publication of KR101888604B1 publication Critical patent/KR101888604B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8312Electrodes characterised by their shape extending at least partially through the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841Reflective coatings, e.g. dielectric Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
KR1020110111308A 2011-10-28 2011-10-28 발광 소자 및 발광 소자 패키지 Active KR101888604B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020110111308A KR101888604B1 (ko) 2011-10-28 2011-10-28 발광 소자 및 발광 소자 패키지
US13/662,348 US9165977B2 (en) 2011-10-28 2012-10-26 Light emitting device and light emitting device package including series of light emitting regions
TW101139757A TWI575775B (zh) 2011-10-28 2012-10-26 發光裝置及發光裝置封裝
JP2012237130A JP6133040B2 (ja) 2011-10-28 2012-10-26 発光素子及び発光素子パッケージ
EP12190234.0A EP2587542B1 (en) 2011-10-28 2012-10-26 Light emitting device and light emitting device package
CN201210421187.3A CN103094435B (zh) 2011-10-28 2012-10-29 发光器件及发光器件封装

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110111308A KR101888604B1 (ko) 2011-10-28 2011-10-28 발광 소자 및 발광 소자 패키지

Publications (2)

Publication Number Publication Date
KR20130046754A KR20130046754A (ko) 2013-05-08
KR101888604B1 true KR101888604B1 (ko) 2018-08-14

Family

ID=47115528

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110111308A Active KR101888604B1 (ko) 2011-10-28 2011-10-28 발광 소자 및 발광 소자 패키지

Country Status (6)

Country Link
US (1) US9165977B2 (https=)
EP (1) EP2587542B1 (https=)
JP (1) JP6133040B2 (https=)
KR (1) KR101888604B1 (https=)
CN (1) CN103094435B (https=)
TW (1) TWI575775B (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9666764B2 (en) * 2012-04-09 2017-05-30 Cree, Inc. Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die
US10388690B2 (en) 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US10804316B2 (en) * 2012-08-07 2020-10-13 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
JP2014127565A (ja) * 2012-12-26 2014-07-07 Toyoda Gosei Co Ltd 半導体発光素子
CN103390713B (zh) * 2013-07-19 2016-04-13 深圳大道半导体有限公司 带光反射层的半导体发光器件
US9847457B2 (en) 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
WO2015016561A1 (en) * 2013-07-29 2015-02-05 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and led module having the same
TWI597864B (zh) 2013-08-27 2017-09-01 晶元光電股份有限公司 具有複數個發光結構之發光元件
TWI678001B (zh) * 2013-08-27 2019-11-21 晶元光電股份有限公司 具有複數個發光結構之發光元件
CN104425538B (zh) * 2013-09-03 2019-05-03 晶元光电股份有限公司 具有多个发光结构的发光元件
TWI478387B (zh) * 2013-10-23 2015-03-21 隆達電子股份有限公司 發光二極體結構
KR102156376B1 (ko) * 2014-02-21 2020-09-15 엘지이노텍 주식회사 발광 소자
KR102156375B1 (ko) * 2014-02-21 2020-09-16 엘지이노텍 주식회사 발광 소자
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
WO2015190817A1 (ko) * 2014-06-10 2015-12-17 주식회사 세미콘라이트 반도체 발광소자
KR101888608B1 (ko) 2014-10-17 2018-09-20 엘지이노텍 주식회사 발광 소자 패키지 및 조명 장치
WO2016177333A1 (zh) * 2015-05-05 2016-11-10 湘能华磊光电股份有限公司 Iii族半导体发光器件倒装结构的制作方法
DE102015112538B4 (de) 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
US9806152B2 (en) * 2016-03-04 2017-10-31 Pakal Technologies Llc Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base
KR101760317B1 (ko) * 2016-05-02 2017-07-21 순천대학교 산학협력단 발광장치
EP3490012B1 (en) * 2016-07-20 2023-09-06 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device
KR102550007B1 (ko) * 2016-11-30 2023-07-03 서울바이오시스 주식회사 복수의 발광셀들을 가지는 발광 다이오드
KR20180073866A (ko) * 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자
KR102737500B1 (ko) * 2016-12-27 2024-12-04 삼성전자주식회사 발광소자 패키지
CN109256446B (zh) * 2017-07-13 2022-02-08 晶元光电股份有限公司 发光元件
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
DE102018101393A1 (de) * 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
JP6717324B2 (ja) * 2018-02-27 2020-07-01 日亜化学工業株式会社 発光素子
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
JP7339559B2 (ja) * 2021-05-20 2023-09-06 日亜化学工業株式会社 発光素子
JP7784328B2 (ja) * 2022-03-08 2025-12-11 スタンレー電気株式会社 半導体発光素子、半導体発光装置及び半導体発光装置モジュール
WO2025097375A1 (en) * 2023-11-09 2025-05-15 Jade Bird Display (shanghai) Limited Micro led and micro led display panel

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5996221A (en) * 1996-12-12 1999-12-07 Lucent Technologies Inc. Method for thermocompression bonding structures
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
WO2005062389A2 (en) * 2003-12-24 2005-07-07 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
JP3802911B2 (ja) * 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
KR100974923B1 (ko) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드
JP5485868B2 (ja) * 2007-04-02 2014-05-07 コーニンクレッカ フィリップス エヌ ヴェ 発光ダイオードの駆動方法
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US8575633B2 (en) * 2008-12-08 2013-11-05 Cree, Inc. Light emitting diode with improved light extraction
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
US7915629B2 (en) * 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
KR101428053B1 (ko) * 2007-12-13 2014-08-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWI466266B (zh) * 2009-02-24 2014-12-21 晶元光電股份有限公司 陣列式發光元件及其裝置
JP5614938B2 (ja) * 2009-02-26 2014-10-29 日亜化学工業株式会社 半導体発光素子
US9093293B2 (en) * 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
US8476668B2 (en) * 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
JP5246199B2 (ja) * 2010-03-31 2013-07-24 豊田合成株式会社 Iii族窒化物半導体発光素子
KR101106151B1 (ko) * 2009-12-31 2012-01-20 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
JP5793292B2 (ja) * 2010-02-17 2015-10-14 豊田合成株式会社 半導体発光素子
JP5494005B2 (ja) * 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
CN102859726B (zh) * 2010-04-06 2015-09-16 首尔伟傲世有限公司 发光二极管及其制造方法
JP2012028749A (ja) * 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
KR101115539B1 (ko) * 2011-06-10 2012-02-28 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
US8759847B2 (en) * 2011-12-22 2014-06-24 Bridgelux, Inc. White LED assembly with LED string and intermediate node substrate terminals
US9276166B2 (en) * 2012-04-13 2016-03-01 Epistar Corporation Method for forming light-emitting device

Also Published As

Publication number Publication date
JP2013098562A (ja) 2013-05-20
US9165977B2 (en) 2015-10-20
US20130105845A1 (en) 2013-05-02
CN103094435B (zh) 2017-04-26
TWI575775B (zh) 2017-03-21
EP2587542B1 (en) 2018-02-28
TW201318214A (zh) 2013-05-01
JP6133040B2 (ja) 2017-05-24
KR20130046754A (ko) 2013-05-08
CN103094435A (zh) 2013-05-08
EP2587542A1 (en) 2013-05-01

Similar Documents

Publication Publication Date Title
KR101888604B1 (ko) 발광 소자 및 발광 소자 패키지
KR101871372B1 (ko) 발광 소자
KR102087933B1 (ko) 발광 소자 및 이를 포함하는 발광 소자 어레이
KR101902392B1 (ko) 발광 소자
KR101799451B1 (ko) 발광 소자
JP2014116604A (ja) 発光素子
KR101830719B1 (ko) 발광 소자
KR20140092037A (ko) 발광 소자 패키지

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20111028

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20161021

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20111028

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20170915

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20180328

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20170915

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

X091 Application refused [patent]
AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20180328

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20171114

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20161021

Comment text: Amendment to Specification, etc.

PX0701 Decision of registration after re-examination

Patent event date: 20180521

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20180425

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20180328

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20171114

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20161021

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20180808

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20180809

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20210720

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20210720

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20220708

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20220708

Start annual number: 5

End annual number: 5