TWI569463B - The forming method of the coating film and the computer memory medium - Google Patents
The forming method of the coating film and the computer memory medium Download PDFInfo
- Publication number
- TWI569463B TWI569463B TW103121878A TW103121878A TWI569463B TW I569463 B TWI569463 B TW I569463B TW 103121878 A TW103121878 A TW 103121878A TW 103121878 A TW103121878 A TW 103121878A TW I569463 B TWI569463 B TW I569463B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- substrate
- heating process
- coating liquid
- coating film
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims description 89
- 239000011248 coating agent Substances 0.000 title claims description 88
- 238000000034 method Methods 0.000 title claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 105
- 238000012545 processing Methods 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 58
- 239000007789 gas Substances 0.000 claims description 47
- 239000007788 liquid Substances 0.000 claims description 47
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 27
- 229910052760 oxygen Inorganic materials 0.000 claims description 27
- 239000001301 oxygen Substances 0.000 claims description 27
- 238000004132 cross linking Methods 0.000 claims description 20
- 239000002904 solvent Substances 0.000 claims description 19
- 230000009477 glass transition Effects 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 110
- 229920002120 photoresistant polymer Polymers 0.000 description 89
- 230000007246 mechanism Effects 0.000 description 17
- 239000010410 layer Substances 0.000 description 15
- 238000001816 cooling Methods 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Resistance Heating (AREA)
- Coating Apparatus (AREA)
- Drying Of Semiconductors (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013141295A JP6081879B2 (ja) | 2013-07-05 | 2013-07-05 | 塗布膜の形成方法、プログラム及びコンピュータ記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201517297A TW201517297A (zh) | 2015-05-01 |
| TWI569463B true TWI569463B (zh) | 2017-02-01 |
Family
ID=52143519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103121878A TWI569463B (zh) | 2013-07-05 | 2014-06-25 | The forming method of the coating film and the computer memory medium |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6081879B2 (enrdf_load_stackoverflow) |
| TW (1) | TWI569463B (enrdf_load_stackoverflow) |
| WO (1) | WO2015001936A1 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016125408A1 (ja) * | 2015-02-05 | 2016-08-11 | 東京エレクトロン株式会社 | 研磨装置、塗布膜形成装置、塗布膜形成方法、記憶媒体、パターン形成方法及びパターン形成装置 |
| JP7308671B2 (ja) * | 2019-07-03 | 2023-07-14 | 東京エレクトロン株式会社 | 基板熱処理装置、基板熱処理方法及び記憶媒体 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200304469A (en) * | 2001-12-17 | 2003-10-01 | Daikin Ind Ltd | Crosslinkable elastomer composition and formed product comprising the same |
| TW200420659A (en) * | 2002-11-02 | 2004-10-16 | Honeywell Int Inc | Gas layer formation materials |
| TW201321460A (zh) * | 2005-07-05 | 2013-06-01 | Hitachi Chemical Co Ltd | 半導體裝置之製造方法及半導體裝置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6381820A (ja) * | 1986-09-25 | 1988-04-12 | Toshiba Corp | レジストパタ−ン形成方法 |
| JPS6381923A (ja) * | 1986-09-26 | 1988-04-12 | Hitachi Ltd | 感光性ポリイミド樹脂処理方法および装置 |
| JPH0289059A (ja) * | 1988-09-26 | 1990-03-29 | Hitachi Electron Eng Co Ltd | ベーク方法 |
| JPH0561206A (ja) * | 1991-08-30 | 1993-03-12 | Oki Electric Ind Co Ltd | レジストの平坦化方法 |
| JP3282240B2 (ja) * | 1992-10-03 | 2002-05-13 | 住友金属工業株式会社 | 帯状材の連続塗装方法 |
| JP3563434B2 (ja) * | 1994-03-22 | 2004-09-08 | 株式会社神戸製鋼所 | 感熱自己接着性樹脂塗装金属板およびその製法並びに該樹脂塗装金属板の接合法 |
| JP3801271B2 (ja) * | 1996-08-30 | 2006-07-26 | 旭硝子株式会社 | アクティブマトリクス基板 |
| JP2001188357A (ja) * | 1999-12-28 | 2001-07-10 | Matsushita Electric Ind Co Ltd | 表示素子用基板への樹脂膜形成法及び装置、並びに該方法を用いた液晶表示装置の製造方法 |
| JP2004002752A (ja) * | 2002-03-28 | 2004-01-08 | Toray Ind Inc | ポリ（脂環式オレフィン）組成物の処理方法並びに半導体装置、光学部品および有機電界発光装置 |
| JP2008186934A (ja) * | 2007-01-29 | 2008-08-14 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
-
2013
- 2013-07-05 JP JP2013141295A patent/JP6081879B2/ja active Active
-
2014
- 2014-06-12 WO PCT/JP2014/065576 patent/WO2015001936A1/ja active Application Filing
- 2014-06-25 TW TW103121878A patent/TWI569463B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200304469A (en) * | 2001-12-17 | 2003-10-01 | Daikin Ind Ltd | Crosslinkable elastomer composition and formed product comprising the same |
| TW200420659A (en) * | 2002-11-02 | 2004-10-16 | Honeywell Int Inc | Gas layer formation materials |
| TW201321460A (zh) * | 2005-07-05 | 2013-06-01 | Hitachi Chemical Co Ltd | 半導體裝置之製造方法及半導體裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201517297A (zh) | 2015-05-01 |
| WO2015001936A1 (ja) | 2015-01-08 |
| JP6081879B2 (ja) | 2017-02-15 |
| JP2015015370A (ja) | 2015-01-22 |
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