TWI564937B - A crystalline laminated structure, and a semiconductor device - Google Patents

A crystalline laminated structure, and a semiconductor device Download PDF

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Publication number
TWI564937B
TWI564937B TW104114711A TW104114711A TWI564937B TW I564937 B TWI564937 B TW I564937B TW 104114711 A TW104114711 A TW 104114711A TW 104114711 A TW104114711 A TW 104114711A TW I564937 B TWI564937 B TW I564937B
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Taiwan
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layer
film
metal
substrate
crystalline
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TW104114711A
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Chinese (zh)
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TW201543547A (zh
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人羅俊實
織田真也
高塚章夫
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Ｆｌｏｓｆｉａ股份有限公司
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    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
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    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
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    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/3451—Structure
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    • H10H20/832—Electrodes characterised by their material
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  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
TW104114711A 2014-05-08 2015-05-08 A crystalline laminated structure, and a semiconductor device TWI564937B (zh)

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JP2014097241 2014-05-08

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TWI564937B true TWI564937B (zh) 2017-01-01

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US (1) US9590050B2 (https=)
EP (1) EP2942804B1 (https=)
JP (2) JP6627131B2 (https=)
CN (1) CN105097896B (https=)
TW (1) TWI564937B (https=)

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CN111933711B (zh) * 2020-08-18 2022-08-23 电子科技大学 一种集成sbd的超结mosfet
CN112713183B (zh) * 2020-12-28 2022-06-10 光华临港工程应用技术研发(上海)有限公司 气体传感器的制备方法及气体传感器
JP7598268B2 (ja) 2021-03-15 2024-12-11 株式会社東芝 半導体装置
JPWO2022230831A1 (https=) * 2021-04-26 2022-11-03
US12550341B2 (en) * 2021-05-18 2026-02-10 Board Of Trustees Of The University Of Arkansas Capacitors for high temperature systems, methods of forming same, and applications of same
CN113629148A (zh) * 2021-06-24 2021-11-09 湖南大学 一种双栅极增强型氧化镓mesfet器件及其制作方法
EP4285415B1 (en) * 2021-07-22 2026-01-28 Huawei Technologies Co., Ltd. Transistor device
US12532530B2 (en) 2021-09-09 2026-01-20 The Regents Of The University Of Michigan Doped aluminum-alloyed gallium oxide and ohmic contacts
CN113794460B (zh) * 2021-09-17 2024-02-23 中国科学技术大学 纳米声子晶体及其制备方法
CN118541811A (zh) * 2022-01-14 2024-08-23 株式会社Flosfia 半导体装置
WO2023182312A1 (ja) * 2022-03-25 2023-09-28 国立大学法人東海国立大学機構 β型酸化ガリウム膜付き基板及びその製造方法
US20250376773A1 (en) * 2022-06-21 2025-12-11 Northwestern University Methods of forming stable conductive surfaces
JP2024016694A (ja) * 2022-07-26 2024-02-07 株式会社ノベルクリスタルテクノロジー フィン型電界効果トランジスタ
WO2025063023A1 (ja) * 2023-09-18 2025-03-27 Ａｇｃ株式会社 電子デバイス
WO2025063022A1 (ja) * 2023-09-18 2025-03-27 Ａｇｃ株式会社 電子デバイス
JP2025087001A (ja) * 2023-11-29 2025-06-10 株式会社ノベルクリスタルテクノロジー 半導体装置の製造方法及び半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101931009A (zh) * 2009-06-22 2010-12-29 富士胶片株式会社 薄膜晶体管和制备薄膜晶体管的方法
TW201249752A (en) * 2011-04-13 2012-12-16 Semiconductor Energy Lab Oxide semiconductor film and semiconductor device
JP2012256850A (ja) * 2011-05-17 2012-12-27 Mitsubishi Materials Corp 強誘電体薄膜の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07262829A (ja) * 1994-03-25 1995-10-13 Hitachi Ltd 透明導電膜及びその形成方法
JP3881407B2 (ja) * 1996-07-31 2007-02-14 Ｈｏｙａ株式会社 導電性酸化物薄膜、この薄膜を有する物品及びその製造方法
US6863943B2 (en) * 2001-01-12 2005-03-08 Georgia Tech Research Corporation Semiconducting oxide nanostructures
TW515116B (en) * 2001-12-27 2002-12-21 South Epitaxy Corp Light emitting diode structure
US7250627B2 (en) * 2004-03-12 2007-07-31 Hewlett-Packard Development Company, L.P. Semiconductor device
TWI253392B (en) 2004-03-29 2006-04-21 Canon Kk Dielectric member, piezoelectric member, ink jet head, ink jet recording apparatus and producing method for ink jet recording apparatus
CN100388519C (zh) 2005-11-17 2008-05-14 晶能光电（江西）有限公司 在硅衬底上制备高质量发光半导体薄膜的方法
JP2007305975A (ja) * 2006-04-13 2007-11-22 National Institute Of Advanced Industrial & Technology Ｉｉｉ族酸化物半導体を含む半導体素子
JP5509419B2 (ja) 2009-07-24 2014-06-04 株式会社ユーテック 強誘電体膜、電子部品及び強誘電体膜の製造方法
KR101932576B1 (ko) * 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5828293B2 (ja) 2011-05-17 2015-12-02 三菱マテリアル株式会社 Ｐｚｔ強誘電体薄膜の製造方法
US9299852B2 (en) * 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013058636A (ja) 2011-09-08 2013-03-28 Tamura Seisakusho Co Ltd β−Ｇａ２Ｏ３系基板、ＬＥＤ素子、及びＬＥＤ素子の製造方法
US20140217471A1 (en) 2011-09-08 2014-08-07 National Institute of Information and Communicatio ns Technology Ga2O3 SEMICONDUCTOR ELEMENT
US9461124B2 (en) * 2011-09-08 2016-10-04 Tamura Corporation Ga2O3 semiconductor element
CN103782392A (zh) 2011-09-08 2014-05-07 株式会社田村制作所 Ga2O3 系半导体元件
JP6083262B2 (ja) * 2012-03-14 2017-02-22 Tdk株式会社 ヘテロエピタキシャルｐｎ接合酸化物薄膜を有する積層薄膜
JP5528612B1 (ja) * 2013-07-09 2014-06-25 Ｒｏｃａ株式会社 半導体装置
JP6067532B2 (ja) * 2013-10-10 2017-01-25 株式会社Flosfia 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101931009A (zh) * 2009-06-22 2010-12-29 富士胶片株式会社 薄膜晶体管和制备薄膜晶体管的方法
TW201249752A (en) * 2011-04-13 2012-12-16 Semiconductor Energy Lab Oxide semiconductor film and semiconductor device
JP2012256850A (ja) * 2011-05-17 2012-12-27 Mitsubishi Materials Corp 強誘電体薄膜の製造方法

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