JPWO2021095474A1 - - Google Patents

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Publication number
JPWO2021095474A1
JPWO2021095474A1 JP2021555973A JP2021555973A JPWO2021095474A1 JP WO2021095474 A1 JPWO2021095474 A1 JP WO2021095474A1 JP 2021555973 A JP2021555973 A JP 2021555973A JP 2021555973 A JP2021555973 A JP 2021555973A JP WO2021095474 A1 JPWO2021095474 A1 JP WO2021095474A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021555973A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021095474A1 publication Critical patent/JPWO2021095474A1/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
JP2021555973A 2019-11-14 2020-10-21 Pending JPWO2021095474A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019206571 2019-11-14
PCT/JP2020/039625 WO2021095474A1 (ja) 2019-11-14 2020-10-21 結晶性酸化物のエッチング方法およびトレンチ形成方法ならびに半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPWO2021095474A1 true JPWO2021095474A1 (https=) 2021-05-20

Family

ID=75911350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021555973A Pending JPWO2021095474A1 (https=) 2019-11-14 2020-10-21

Country Status (2)

Country Link
JP (1) JPWO2021095474A1 (https=)
WO (1) WO2021095474A1 (https=)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000103689A (ja) * 1998-09-28 2000-04-11 Kyocera Corp アルミナ質焼結体およびその製造方法、並びに耐プラズマ部材
JP2007335505A (ja) * 2006-06-13 2007-12-27 Canon Inc 酸化物半導体膜のドライエッチング方法
JP2013077817A (ja) * 2011-09-16 2013-04-25 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013179127A (ja) * 2012-02-28 2013-09-09 National Institute Of Advanced Industrial & Technology 電子デバイスの製造方法及び薄膜トランジスタ
JP2015227279A (ja) * 2014-05-08 2015-12-17 株式会社Flosfia 結晶性積層構造体および半導体装置
JP2016208024A (ja) * 2015-04-15 2016-12-08 株式会社半導体エネルギー研究所 電極及び半導体装置の作製方法
JP2017224794A (ja) * 2016-06-17 2017-12-21 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
JP2018093207A (ja) * 2014-07-22 2018-06-14 株式会社Flosfia 結晶性半導体膜および板状体ならびに半導体装置
JP2018142655A (ja) * 2017-02-28 2018-09-13 株式会社タムラ製作所 ショットキーバリアダイオード
JP2018170306A (ja) * 2017-03-29 2018-11-01 Tdk株式会社 酸化ガリウム半導体装置の製造方法
JP2019048766A (ja) * 2018-10-11 2019-03-28 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000103689A (ja) * 1998-09-28 2000-04-11 Kyocera Corp アルミナ質焼結体およびその製造方法、並びに耐プラズマ部材
JP2007335505A (ja) * 2006-06-13 2007-12-27 Canon Inc 酸化物半導体膜のドライエッチング方法
JP2013077817A (ja) * 2011-09-16 2013-04-25 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013179127A (ja) * 2012-02-28 2013-09-09 National Institute Of Advanced Industrial & Technology 電子デバイスの製造方法及び薄膜トランジスタ
JP2015227279A (ja) * 2014-05-08 2015-12-17 株式会社Flosfia 結晶性積層構造体および半導体装置
JP2018093207A (ja) * 2014-07-22 2018-06-14 株式会社Flosfia 結晶性半導体膜および板状体ならびに半導体装置
JP2016208024A (ja) * 2015-04-15 2016-12-08 株式会社半導体エネルギー研究所 電極及び半導体装置の作製方法
JP2017224794A (ja) * 2016-06-17 2017-12-21 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
JP2018142655A (ja) * 2017-02-28 2018-09-13 株式会社タムラ製作所 ショットキーバリアダイオード
JP2018170306A (ja) * 2017-03-29 2018-11-01 Tdk株式会社 酸化ガリウム半導体装置の製造方法
JP2019048766A (ja) * 2018-10-11 2019-03-28 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子

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Publication number Publication date
WO2021095474A1 (ja) 2021-05-20

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