JP6873516B1 - パワー半導体素子及びその製造方法 - Google Patents
パワー半導体素子及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 230000005684 electric field Effects 0.000 claims abstract description 53
- 238000000926 separation method Methods 0.000 claims abstract description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 238000005304 joining Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 19
- -1 nitrogen ions Chemical class 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 19
- 238000010586 diagram Methods 0.000 abstract description 12
- 238000005468 ion implantation Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 88
- 239000010408 film Substances 0.000 description 52
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 42
- 229910010271 silicon carbide Inorganic materials 0.000 description 29
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 27
- 239000013078 crystal Substances 0.000 description 16
- 238000009826 distribution Methods 0.000 description 11
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- 239000000306 component Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002772 conduction electron Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
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Abstract
【解決手段】トレンチゲートの下部に窒素イオン注入による電流分離層を形成することでドレインに高電圧印加時にゲート酸化膜の絶縁破壊を防止する。
【選択図】図1
Description
10 n+型ソース領域
11 ゲート引出電極
12 ソース電極
13 p型Siバルク層
14 p型ブロック層
15 Si/SiCヘテロ接合界面
16 n−型SiCドリフト層
17 n+型SiCドレイン層
18 ドレイン電極
19 被覆絶縁膜
22 トレンチ
23 トレンチゲート電極
25 ゲート酸化膜
30 n型ワイドバンドギャップ半導体基板
31 ソース電極
32 n+型ソース領域
33 被覆絶縁膜
34 トレンチゲート電極
35 ゲート酸化膜
36 p型Siバルク層
37 p型ブロック層
38 Si/Ga2O3ヘテロ接合界面
39 n−型Ga2O3ドリフト層
40 “電流分離層”
41 n+型Ga2O3ドレイン層
42 窒素イオン注入
43 トレンチ溝
Claims (8)
- 第一導電型のドレイン層と、前記ドレイン層より不純物濃度の低い第一導電型のドリフト層を有する酸化ガリウム基板と、前記ドリフト層に直接接合し、前記第一導電型と反対導電型の第二導電型のSi基板と、前記ドリフト層と前記Si基板との間に前記Si基板に電界が侵入することをブロックする第二導電型のブロック層を有し、前記Si基板は少なくとも前記ドリフト層に達するトレンチを有し、前記トレンチの少なくとも内側の表面に設けられたゲート絶縁膜と、前記ゲート絶縁膜を埋め込むトレンチゲート電極と、前記トレンチゲート電極の底部の前記ゲート絶縁膜の下の酸化ガリウムドリフト層に窒素ドープした電流分離層を有し、前記Si基板の露出表面側に設けられた第一導電型のソース領域と第二導電型の基板コンタクト領域と、前記ソース領域と前記基板コンタクト領域に接続するソース電極と、前記ドレイン層に接続するドレイン電極を有し、前記第二導電型のブロック層は前記ゲート絶縁膜に接しているパワー半導体素子。
- 前記トレンチゲート電極の底部に位置する電流分離層は前記トレンチゲート電極の底部の隅に対し0.1μm以上外側に広がり囲むように形成され、前記電流分離層の深さは前記トレンチゲート電極の底部から0.2μm乃至0.8μmである請求項1に記載のパワー半導体素子。
- 前記トレンチゲート電極の先端部が前記ゲート絶縁膜を介して少なくとも前記酸化ガリウムドリフト層に達している請求項1または請求項2に記載のパワー半導体素子。
- 複数の前記トレンチゲート電極が平行に設けられ、前記トレンチゲート電極の間に挟まれた前記Si基板の水平方向の幅が1.5μm以下である請求項1乃至請求項3のいずれか1項に記載のパワー半導体素子。
- 第一導電型のドレイン層上に第一導電型の酸化ガリウムドリフト層をエピタキシャル成長させた酸化ガリウム基板を形成し、前記第一導電型と反対導電型の第二導電型のSi基板の表面に第二導電型のSiブロック層を形成し、前記酸化ガリウムドリフト層側の表面と前記Si基板側の表面を、前記酸化ガリウム基板と前記Si基板を相対して直接接合により合体させ、前記Si基板を0.5μm乃至1.2μmの厚さまで研磨し、前記Si基板に少なくとも前記酸化ガリウムドリフト層に達するトレンチを形成し、前記トレンチの少なくとも内側の表面にゲート絶縁膜を形成し、前記トレンチの底部の前記ゲート絶縁膜の下の前記酸化ガリウムドリフト層に窒素をイオン注入して電流分離層を形成し、前記トレンチの内部をトレンチゲート電極で埋め込むパワー半導体素子の製造方法。
- 前記電流分離層の形成する際に、前記トレンチゲート電極の底部に窒素イオンを傾斜注入する請求項5記載のパワー半導体素子の製造方法。
- 前記窒素イオンを前記電流分離層が、トレンチゲート電極の底部の隅に対し0.1μm以上外側に広がり、且つ、トレンチゲート電極の底部から0.2μm乃至0.8μmとなるように(傾斜)イオン注入する請求項6に記載のパワー半導体素子の製造方法。
- 前記酸化ガリウム基板と前記Si基板を相対して直接接合により合体させる際に、表面活性化接合もしくは水素結合を利用したプラズマ活性化接合により合体させる請求項5乃至請求項7のいずれか1項に記載のパワー半導体素子の製造方法。
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