TWI562285B - Semiconductor device and method for manufacturing the same - Google Patents
Semiconductor device and method for manufacturing the sameInfo
- Publication number
- TWI562285B TWI562285B TW100125446A TW100125446A TWI562285B TW I562285 B TWI562285 B TW I562285B TW 100125446 A TW100125446 A TW 100125446A TW 100125446 A TW100125446 A TW 100125446A TW I562285 B TWI562285 B TW I562285B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- same
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010178174 | 2010-08-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201222734A TW201222734A (en) | 2012-06-01 |
TWI562285B true TWI562285B (en) | 2016-12-11 |
Family
ID=45555457
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100125446A TWI562285B (en) | 2010-08-06 | 2011-07-19 | Semiconductor device and method for manufacturing the same |
TW105129331A TWI615920B (zh) | 2010-08-06 | 2011-07-19 | 半導體裝置及其製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105129331A TWI615920B (zh) | 2010-08-06 | 2011-07-19 | 半導體裝置及其製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120032163A1 (zh) |
JP (4) | JP5819671B2 (zh) |
KR (1) | KR20120022614A (zh) |
CN (2) | CN102376584B (zh) |
TW (2) | TWI562285B (zh) |
Families Citing this family (39)
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JP5504008B2 (ja) | 2009-03-06 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2011065210A1 (en) | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
KR102304078B1 (ko) | 2009-11-28 | 2021-09-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
CN105140101B (zh) | 2009-11-28 | 2018-11-16 | 株式会社半导体能源研究所 | 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法 |
KR101878206B1 (ko) * | 2010-03-05 | 2018-07-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법 |
TWI525818B (zh) | 2010-11-30 | 2016-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置之製造方法 |
JP6059566B2 (ja) * | 2012-04-13 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5995504B2 (ja) * | 2012-04-26 | 2016-09-21 | 富士フイルム株式会社 | 電界効果型トランジスタ及びその製造方法、表示装置、イメージセンサ並びにx線センサ |
JP2013254948A (ja) | 2012-05-09 | 2013-12-19 | Kobe Steel Ltd | 薄膜トランジスタおよび表示装置 |
JP6050721B2 (ja) * | 2012-05-25 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9153699B2 (en) * | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
KR102161077B1 (ko) * | 2012-06-29 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9245958B2 (en) * | 2012-08-10 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9929276B2 (en) | 2012-08-10 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP6220597B2 (ja) * | 2012-08-10 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
SG11201504939RA (en) | 2012-09-03 | 2015-07-30 | Semiconductor Energy Lab | Microcontroller |
KR102168987B1 (ko) * | 2012-10-17 | 2020-10-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 마이크로컨트롤러 및 그 제조 방법 |
KR102279459B1 (ko) | 2012-10-24 | 2021-07-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
TWI782259B (zh) | 2012-10-24 | 2022-11-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US9373711B2 (en) * | 2013-02-27 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9893192B2 (en) * | 2013-04-24 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102060536B1 (ko) * | 2013-04-26 | 2019-12-31 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
DE102014208859B4 (de) | 2013-05-20 | 2021-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
US9647125B2 (en) * | 2013-05-20 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
GB2517697A (en) | 2013-08-27 | 2015-03-04 | Ibm | Compound semiconductor structure |
CN106165106B (zh) * | 2014-03-28 | 2020-09-15 | 株式会社半导体能源研究所 | 晶体管以及半导体装置 |
TWI663733B (zh) | 2014-06-18 | 2019-06-21 | 日商半導體能源研究所股份有限公司 | 電晶體及半導體裝置 |
US9954112B2 (en) | 2015-01-26 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6857447B2 (ja) * | 2015-01-26 | 2021-04-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9660100B2 (en) | 2015-02-06 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102440302B1 (ko) * | 2015-04-13 | 2022-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US11189736B2 (en) | 2015-07-24 | 2021-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
SG10201608814YA (en) | 2015-10-29 | 2017-05-30 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the semiconductor device |
KR20240027878A (ko) | 2016-03-22 | 2024-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
US10388738B2 (en) | 2016-04-01 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and method for manufacturing the same |
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CN105826250B (zh) * | 2016-05-17 | 2018-11-30 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板、显示装置及薄膜晶体管制作方法 |
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JP2010153802A (ja) * | 2008-11-20 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
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KR101460869B1 (ko) * | 2009-09-04 | 2014-11-11 | 가부시끼가이샤 도시바 | 박막 트랜지스터 및 그 제조 방법 |
KR101638977B1 (ko) * | 2009-11-13 | 2016-07-12 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
CN105140101B (zh) * | 2009-11-28 | 2018-11-16 | 株式会社半导体能源研究所 | 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法 |
WO2011070928A1 (en) * | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2011
- 2011-07-19 TW TW100125446A patent/TWI562285B/zh active
- 2011-07-19 TW TW105129331A patent/TWI615920B/zh not_active IP Right Cessation
- 2011-07-29 US US13/193,771 patent/US20120032163A1/en not_active Abandoned
- 2011-08-04 JP JP2011171237A patent/JP5819671B2/ja active Active
- 2011-08-05 KR KR1020110078159A patent/KR20120022614A/ko not_active Application Discontinuation
- 2011-08-08 CN CN201110257442.0A patent/CN102376584B/zh active Active
- 2011-08-08 CN CN201610251709.8A patent/CN105826204B/zh not_active Expired - Fee Related
-
2015
- 2015-10-01 JP JP2015195540A patent/JP6022658B2/ja active Active
-
2016
- 2016-10-05 JP JP2016197191A patent/JP6209661B2/ja not_active Expired - Fee Related
-
2017
- 2017-09-11 JP JP2017173819A patent/JP6370978B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090250693A1 (en) * | 2008-04-03 | 2009-10-08 | Hong-Han Jeong | Thin film transistor, display device, including the same, and associated methods |
US20100084651A1 (en) * | 2008-10-03 | 2010-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
Also Published As
Publication number | Publication date |
---|---|
TW201714251A (zh) | 2017-04-16 |
JP6022658B2 (ja) | 2016-11-09 |
TWI615920B (zh) | 2018-02-21 |
TW201222734A (en) | 2012-06-01 |
JP2017063201A (ja) | 2017-03-30 |
JP6370978B2 (ja) | 2018-08-08 |
JP2018019087A (ja) | 2018-02-01 |
CN105826204B (zh) | 2019-07-05 |
JP6209661B2 (ja) | 2017-10-04 |
CN105826204A (zh) | 2016-08-03 |
KR20120022614A (ko) | 2012-03-12 |
JP5819671B2 (ja) | 2015-11-24 |
CN102376584A (zh) | 2012-03-14 |
JP2012054547A (ja) | 2012-03-15 |
JP2016029728A (ja) | 2016-03-03 |
US20120032163A1 (en) | 2012-02-09 |
CN102376584B (zh) | 2016-05-18 |
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