TWI559359B - 中段頻率射頻範圍中之高電壓偏壓電源用之旁路電容器 - Google Patents

中段頻率射頻範圍中之高電壓偏壓電源用之旁路電容器 Download PDF

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Publication number
TWI559359B
TWI559359B TW101144016A TW101144016A TWI559359B TW I559359 B TWI559359 B TW I559359B TW 101144016 A TW101144016 A TW 101144016A TW 101144016 A TW101144016 A TW 101144016A TW I559359 B TWI559359 B TW I559359B
Authority
TW
Taiwan
Prior art keywords
electrostatic chuck
plasma chamber
capacitor
lift pin
decoupling
Prior art date
Application number
TW101144016A
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English (en)
Chinese (zh)
Other versions
TW201342759A (zh
Inventor
亞瑟 沙圖
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蘭姆研究公司
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Publication of TW201342759A publication Critical patent/TW201342759A/zh
Application granted granted Critical
Publication of TWI559359B publication Critical patent/TWI559359B/zh

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/46—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to frequency deviations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32944—Arc detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F3/00—Carrying-off electrostatic charges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW101144016A 2011-11-23 2012-11-23 中段頻率射頻範圍中之高電壓偏壓電源用之旁路電容器 TWI559359B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161563526P 2011-11-23 2011-11-23
US13/684,065 US9083182B2 (en) 2011-11-21 2012-11-21 Bypass capacitors for high voltage bias power in the mid frequency RF range

Publications (2)

Publication Number Publication Date
TW201342759A TW201342759A (zh) 2013-10-16
TWI559359B true TWI559359B (zh) 2016-11-21

Family

ID=48426639

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101144016A TWI559359B (zh) 2011-11-23 2012-11-23 中段頻率射頻範圍中之高電壓偏壓電源用之旁路電容器

Country Status (5)

Country Link
US (1) US9083182B2 (enExample)
JP (1) JP6125521B2 (enExample)
KR (1) KR102031389B1 (enExample)
TW (1) TWI559359B (enExample)
WO (1) WO2013078465A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015162266A (ja) * 2014-02-26 2015-09-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN104347358A (zh) * 2014-09-15 2015-02-11 上海华力微电子有限公司 改善器件等离子体损伤的方法
CN104465476A (zh) * 2014-11-28 2015-03-25 上海华力微电子有限公司 一种静电吸盘
US9736920B2 (en) * 2015-02-06 2017-08-15 Mks Instruments, Inc. Apparatus and method for plasma ignition with a self-resonating device
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
JP2018006299A (ja) 2016-07-08 2018-01-11 東芝メモリ株式会社 プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法
JP6688715B2 (ja) * 2016-09-29 2020-04-28 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
US11367597B2 (en) 2018-07-05 2022-06-21 Samsung Electronics Co., Ltd. Electrostatic chuck and plasma processing apparatus including the same
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
US12183618B2 (en) * 2020-10-01 2024-12-31 Applied Materials, Inc. Apparatus and methods to transfer substrates into and out of a spatial multi-substrate processing tool
US11764094B2 (en) * 2022-02-18 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6494958B1 (en) * 2000-06-29 2002-12-17 Applied Materials Inc. Plasma chamber support with coupled electrode
US20060075969A1 (en) * 2004-10-13 2006-04-13 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US20100008015A1 (en) * 2008-07-07 2010-01-14 Jean-Paul Booth Capacitively-coupled electrostatic (cce) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof

Family Cites Families (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
RU2094961C1 (ru) 1989-07-20 1997-10-27 Уланов Игорь Максимович Трансформаторный плазмотрон
RU2022917C1 (ru) 1989-09-27 1994-11-15 Уланов Игорь Максимович Способ получения окиси азота
RU2056702C1 (ru) 1990-07-09 1996-03-20 Уланов Игорь Максимович Трансформаторный плазмотрон
US5183990A (en) 1991-04-12 1993-02-02 The Lincoln Electric Company Method and circuit for protecting plasma nozzle
JPH0521393A (ja) 1991-07-11 1993-01-29 Sony Corp プラズマ処理装置
US5349271A (en) 1993-03-24 1994-09-20 Diablo Research Corporation Electrodeless discharge lamp with spiral induction coil
US5822171A (en) 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5620524A (en) 1995-02-27 1997-04-15 Fan; Chiko Apparatus for fluid delivery in chemical vapor deposition systems
US6902683B1 (en) 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
JP3499104B2 (ja) * 1996-03-01 2004-02-23 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5846883A (en) 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US5968587A (en) 1996-11-13 1999-10-19 Applied Materials, Inc. Systems and methods for controlling the temperature of a vapor deposition apparatus
US6924455B1 (en) 1997-06-26 2005-08-02 Applied Science & Technology, Inc. Integrated plasma chamber and inductively-coupled toroidal plasma source
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6841203B2 (en) 1997-12-24 2005-01-11 Tokyo Electron Limited Method of forming titanium film by CVD
US6273022B1 (en) 1998-03-14 2001-08-14 Applied Materials, Inc. Distributed inductively-coupled plasma source
US5998933A (en) 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6335293B1 (en) 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
JP4463363B2 (ja) * 1998-12-28 2010-05-19 東京エレクトロン株式会社 下部電極構造およびそれを用いたプラズマ処理装置
US6178919B1 (en) 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6579805B1 (en) 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
US6392351B1 (en) 1999-05-03 2002-05-21 Evgeny V. Shun'ko Inductive RF plasma source with external discharge bridge
US6206972B1 (en) 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
EP1212775A1 (en) 1999-08-06 2002-06-12 Advanced Energy Industries, Inc. Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof
KR20020070436A (ko) 1999-11-19 2002-09-09 나노 스케일 서피스 시스템즈, 인코포레이티드 무기/유기 유전체 막의 증착 시스템 및 증착 방법
US6337460B2 (en) 2000-02-08 2002-01-08 Thermal Dynamics Corporation Plasma arc torch and method for cutting a workpiece
US6894245B2 (en) 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7220937B2 (en) 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
JP2003529926A (ja) 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
US6302965B1 (en) 2000-08-15 2001-10-16 Applied Materials, Inc. Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
US20020197402A1 (en) 2000-12-06 2002-12-26 Chiang Tony P. System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6886491B2 (en) 2001-03-19 2005-05-03 Apex Co. Ltd. Plasma chemical vapor deposition apparatus
US6755150B2 (en) 2001-04-20 2004-06-29 Applied Materials Inc. Multi-core transformer plasma source
US6974523B2 (en) 2001-05-16 2005-12-13 Lam Research Corporation Hollow anode plasma reactor and method
US6527911B1 (en) 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
TWI234417B (en) 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US20030027428A1 (en) 2001-07-18 2003-02-06 Applied Materials, Inc. Bypass set up for integration of remote optical endpoint for CVD chamber
US6984288B2 (en) 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
US20030045098A1 (en) 2001-08-31 2003-03-06 Applied Materials, Inc. Method and apparatus for processing a wafer
US6855906B2 (en) 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
US6590344B2 (en) 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
KR100450068B1 (ko) 2001-11-23 2004-09-24 주성엔지니어링(주) Ｃｖｄ 장치의 멀티섹터 평판형 샤워헤드
WO2003073489A1 (en) 2002-02-28 2003-09-04 Tokyo Electron Limited Plasma processing device and feeding unit
US6646233B2 (en) 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
FR2838020B1 (fr) 2002-03-28 2004-07-02 Centre Nat Rech Scient Dispositif de confinement de plasma
US20030188685A1 (en) 2002-04-08 2003-10-09 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
US7013834B2 (en) 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
AU2003280398A1 (en) 2002-06-28 2004-01-19 Tokyo Electron Limited Method and system for arc suppression in a plasma processing system
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US7256132B2 (en) 2002-07-31 2007-08-14 Applied Materials, Inc. Substrate centering apparatus and method
US20040027781A1 (en) 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
US20030015965A1 (en) 2002-08-15 2003-01-23 Valery Godyak Inductively coupled plasma reactor
US6887521B2 (en) 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
US20040040503A1 (en) 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040040502A1 (en) 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US6887317B2 (en) 2002-09-10 2005-05-03 Applied Materials, Inc. Reduced friction lift pin
US7252738B2 (en) 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US7163602B2 (en) 2003-03-07 2007-01-16 Ogle John S Apparatus for generating planar plasma using concentric coils and ferromagnetic cores
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
JP4460940B2 (ja) 2003-05-07 2010-05-12 株式会社ニューパワープラズマ 多重放電管ブリッジを備えた誘導プラズマチャンバ
US7455748B2 (en) 2003-06-20 2008-11-25 Lam Research Corporation Magnetic enhancement for mechanical confinement of plasma
US7144521B2 (en) 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
JP4607517B2 (ja) 2003-09-03 2011-01-05 東京エレクトロン株式会社 プラズマ処理装置
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7464662B2 (en) 2004-01-28 2008-12-16 Tokyo Electron Limited Compact, distributed inductive element for large scale inductively-coupled plasma sources
US7169256B2 (en) 2004-05-28 2007-01-30 Lam Research Corporation Plasma processor with electrode responsive to multiple RF frequencies
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
CN1954095B (zh) 2004-07-05 2010-06-09 东京毅力科创株式会社 处理装置和加热器单元
US7534301B2 (en) 2004-09-21 2009-05-19 Applied Materials, Inc. RF grounding of cathode in process chamber
US7323116B2 (en) 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
US7393432B2 (en) 2004-09-29 2008-07-01 Lam Research Corporation RF ground switch for plasma processing system
US20060237138A1 (en) 2005-04-26 2006-10-26 Micron Technology, Inc. Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
US8092638B2 (en) 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US7397232B2 (en) 2005-10-21 2008-07-08 The University Of Akron Coulter counter having a plurality of channels
US8674255B1 (en) 2005-12-08 2014-03-18 Lam Research Corporation Apparatus and method for controlling etch uniformity
US7683289B2 (en) 2005-12-16 2010-03-23 Lam Research Corporation Apparatus and method for controlling plasma density profile
US20070170155A1 (en) 2006-01-20 2007-07-26 Fink Steven T Method and apparatus for modifying an etch profile
US7619179B2 (en) 2006-01-20 2009-11-17 Tokyo Electron Limited Electrode for generating plasma and plasma processing apparatus using same
US8012306B2 (en) 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
US8097120B2 (en) 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US8911590B2 (en) 2006-02-27 2014-12-16 Lam Research Corporation Integrated capacitive and inductive power sources for a plasma etching chamber
US7432467B2 (en) 2006-03-28 2008-10-07 Tokyo Electron Limited Plasma processing apparatus
US8138445B2 (en) 2006-03-30 2012-03-20 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8231799B2 (en) 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US7837826B2 (en) 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
US7829815B2 (en) 2006-09-22 2010-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable electrodes and coils for plasma density distribution control
DE102006048816A1 (de) 2006-10-16 2008-04-17 Iplas Innovative Plasma Systems Gmbh Vorrichtung und Verfahren zur lokalen Erzeugung von Mikrowellenplasmen
CN101583736A (zh) 2007-01-19 2009-11-18 应用材料股份有限公司 浸没式等离子体室
US20080179007A1 (en) 2007-01-30 2008-07-31 Collins Kenneth S Reactor for wafer backside polymer removal using plasma products in a lower process zone and purge gases in an upper process zone
US7897213B2 (en) 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
US7972470B2 (en) 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
WO2008154222A1 (en) 2007-06-06 2008-12-18 Mks Instruments, Inc. Particle reduction through gas and plasma source control
US20090025879A1 (en) 2007-07-26 2009-01-29 Shahid Rauf Plasma reactor with reduced electrical skew using a conductive baffle
US20090109595A1 (en) 2007-10-31 2009-04-30 Sokudo Co., Ltd. Method and system for performing electrostatic chuck clamping in track lithography tools
JP5759177B2 (ja) 2008-02-08 2015-08-05 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理装置、半導体基板を処理する方法、および軸直角変位ベローズユニット
CN102027574B (zh) 2008-02-08 2014-09-10 朗姆研究公司 等离子体处理室部件的保护性涂层及其使用方法
US7558045B1 (en) 2008-03-20 2009-07-07 Novellus Systems, Inc. Electrostatic chuck assembly with capacitive sense feature, and related operating method
JP5294669B2 (ja) 2008-03-25 2013-09-18 東京エレクトロン株式会社 プラズマ処理装置
US8236133B2 (en) 2008-05-05 2012-08-07 Applied Materials, Inc. Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
US8679288B2 (en) 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8206552B2 (en) 2008-06-25 2012-06-26 Applied Materials, Inc. RF power delivery system in a semiconductor apparatus
JP5144594B2 (ja) 2008-06-30 2013-02-13 ヤフー株式会社 サーバ装置、サーバ装置における予測方法及びプログラム
KR20100031960A (ko) 2008-09-17 2010-03-25 삼성전자주식회사 플라즈마 발생장치
JP5295833B2 (ja) 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
US20100098875A1 (en) 2008-10-17 2010-04-22 Andreas Fischer Pre-coating and wafer-less auto-cleaning system and method
US20100116788A1 (en) 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
WO2010065474A2 (en) 2008-12-03 2010-06-10 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
US8099995B2 (en) 2008-12-16 2012-01-24 Agilent Technologies, Inc. Choked flow isolator for noise reduction in analytical systems
CN102308675B (zh) 2009-02-04 2016-01-13 应用材料公司 用于等离子体工艺的接地回流路径
US8503151B2 (en) 2009-09-30 2013-08-06 Lam Research Corporation Plasma arrestor insert
CN102550130A (zh) 2009-08-31 2012-07-04 朗姆研究公司 用于执行等离子体约束的多外围环装置
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
US20130059448A1 (en) 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9117767B2 (en) 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
WO2012048121A1 (en) 2010-10-08 2012-04-12 Cooper Technologies Company Solid-core surge arrester
US8618446B2 (en) 2011-06-30 2013-12-31 Applied Materials, Inc. Substrate support with substrate heater and symmetric RF return
US9039911B2 (en) 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US8652298B2 (en) 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
WO2013078434A1 (en) 2011-11-24 2013-05-30 Lam Research Corporation Plasma processing chamber with flexible symmetric rf return strap
JP5166595B2 (ja) 2011-12-16 2013-03-21 株式会社藤商事 遊技機
US8932429B2 (en) 2012-02-23 2015-01-13 Lam Research Corporation Electronic knob for tuning radial etch non-uniformity at VHF frequencies
US9881772B2 (en) 2012-03-28 2018-01-30 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6494958B1 (en) * 2000-06-29 2002-12-17 Applied Materials Inc. Plasma chamber support with coupled electrode
US20060075969A1 (en) * 2004-10-13 2006-04-13 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US20100008015A1 (en) * 2008-07-07 2010-01-14 Jean-Paul Booth Capacitively-coupled electrostatic (cce) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof

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US9083182B2 (en) 2015-07-14
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