JP7376623B2 - ウエハ処理システム向けの熱管理のシステム及び方法 - Google Patents
ウエハ処理システム向けの熱管理のシステム及び方法 Download PDFInfo
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Description
Claims (19)
- 被加工物ホルダであって、
前記被加工物ホルダは、要素および層を備え、前記要素及び層は、下から上に、
熱シンク、
第1熱的に安定なポリマー層、
第1金属層、
第1電気絶縁層、
第1及び第2ヒータ要素トレースであって、同じレベルにあり、前記第2ヒータ要素トレースは前記第1ヒータ要素トレースから径方向外側にある、第1及び第2ヒータ要素トレース、
第2電気絶縁層、
第2金属層、
第2熱的に安定なポリマー層、及び
円筒軸、前記円筒軸の周囲のパック半径、及びパック厚さによって特徴付けられる、実質的に円筒形のパック、
の物理的順序で配置されて、共に結合された、要素及び層を備えており、
前記パック半径が、前記パック厚さの少なくとも4倍であり、
前記パックの少なくとも上面が実質的に平らであり、
前記パックが、一又は複数の径方向熱遮断部を画定し、各熱遮断部が、前記パックの上面と底面の少なくとも一方と交わる径方向凹部として特徴付けられる、被加工物ホルダ。 - 各径方向凹部が、前記パックの前記上面又は前記底面から前記パック厚さの少なくとも半分まで延びる熱遮断部深さによって特徴付けられる、請求項1に記載の被加工物ホルダ。
- 各径方向凹部が、前記円筒軸について対称に配置され、かつ前記パック半径の少なくとも二分の一である、熱遮断部半径によって特徴付けられる、請求項1に記載の被加工物ホルダ。
- 前記パックの前記底面に隣接して、かつ、前記円筒軸に対して前記一又は複数の熱遮断部から径方向内側に配置された、第1加熱デバイスであって、前記熱遮断部半径の内側で前記パックの前記底面と熱接触している、第1加熱デバイスを更に備える、請求項3に記載の被加工物ホルダ。
- 前記パックの前記底面に隣接して、かつ、前記円筒軸に対して前記一又は複数の熱遮断部から径方向外側に配置された、第2加熱デバイスであって、前記熱遮断部半径の外側で前記パックの前記底面と熱接触している、第2加熱デバイスを更に備える、請求項4に記載の被加工物ホルダ。
- 前記径方向凹部が、前記上面と交わり、かつ、前記パック半径の少なくとも60%である熱遮断部半径によって特徴付けられる、請求項1に記載の被加工物ホルダ。
- 前記径方向凹部が前記上面と交わり、前記被加工物ホルダが、伸長状態において前記上面の上方に延在し、かつ、後退状態において前記径方向凹部内に後退する、少なくとも3つのリフト要素を更に備える、請求項1に記載の被加工物ホルダ。
- 前記第1加熱デバイスと前記第2加熱デバイスの少なくとも一方が、複数の電気絶縁層の間に配置されているヒータ要素トレースを備える、請求項5に記載の被加工物ホルダ。
- 前記ヒータ要素トレースが抵抗性材料を含み、前記電気絶縁層のうちの少なくとも1つがポリイミドを含む、請求項8に記載の被加工物ホルダ。
- 前記ヒータ要素トレース及び前記電気絶縁層が、複数の金属層の間に配置される、請求項8に記載の被加工物ホルダ。
- 前記パックの前記底面の実質的に全体に延在する、熱シンクを更に備え、前記第1加熱デバイス及び前記第2加熱デバイスが、前記熱シンクと前記パックの前記底面との間に配置されている、請求項5に記載の被加工物ホルダ。
- 前記熱シンクが、一又は複数の流体チャネルを画定する金属プレートを備える、請求項11に記載の被加工物ホルダ。
- 被加工物ホルダであって、
前記被加工物ホルダは、要素および層を備え、前記要素及び層は、下から上に、
熱シンク、
第1の熱的に安定なポリマー層、
第1金属層、
第1電気絶縁層、
第1及び第2ヒータ要素トレースであって、同じレベルにあり、前記第2ヒータ要素トレースは前記第1ヒータ要素トレースから径方向外側にある、第1及び第2ヒータ要素トレース、
第2電気絶縁層、
第2金属層、
第2熱的に安定なポリマー層、及び
円筒軸及び実質的に平らな上面によって特徴付けられる、実質的に円筒形のパック
の物理的順序で配置されて、共に結合された、要素及び層を備えており、
前記パックは2つの径方向熱遮断部を画定し、
前記熱遮断部のうちの第1のものが、第1半径のところで前記パックの底面と交わり、かつ、前記底面から前記パックの厚さの少なくとも二分の一まで延在する、径方向凹部として特徴付けられ、
前記熱遮断部のうちの第2のものが、前記第1半径よりも大きい第2半径のところで前記上面と交わり、かつ、前記上面から前記パックの前記厚さの少なくとも二分の一まで延在する、径方向凹部として特徴付けられる、被加工物ホルダ。 - 前記パックの前記底面の実質的に下方に延在する熱シンクを更に備える、請求項13に記載の被加工物ホルダ。
- 前記熱シンクが、内部に画定されたチャネルを通して熱交換流体を流す金属プレートを備える、請求項14に記載の被加工物ホルダ。
- 前記熱シンクと前記パックとの間に配置された第1加熱デバイスを更に備える、請求項14に記載の被加工物ホルダ。
- 前記第1加熱デバイスが、前記第1半径の内側で前記パックの前記底面及び前記熱シンクと熱連通している、請求項16に記載の被加工物ホルダ。
- 前記熱シンクと前記パックとの間に配置された第2加熱デバイスを更に備える、請求項16に記載の被加工物ホルダ。
- 前記第2加熱デバイスが、前記第2半径の外側で前記パックの前記底面及び前記熱シンクと熱連通している、請求項18に記載の被加工物ホルダ。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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US14/820,365 US9741593B2 (en) | 2015-08-06 | 2015-08-06 | Thermal management systems and methods for wafer processing systems |
US14/820,422 US9691645B2 (en) | 2015-08-06 | 2015-08-06 | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US14/820,365 | 2015-08-06 | ||
US14/820,422 | 2015-08-06 | ||
JP2017553895A JP7014607B2 (ja) | 2015-08-06 | 2016-08-04 | ウエハ処理システム向けの熱管理のシステム及び方法 |
PCT/US2016/045551 WO2017024132A1 (en) | 2015-08-06 | 2016-08-04 | Thermal management systems and methods for wafer processing systems |
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JP7376623B2 true JP7376623B2 (ja) | 2023-11-08 |
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JP2017553895A Active JP7014607B2 (ja) | 2015-08-06 | 2016-08-04 | ウエハ処理システム向けの熱管理のシステム及び方法 |
JP2021128363A Active JP7250076B2 (ja) | 2015-08-06 | 2021-08-04 | ウエハ処理システム向けの、ボルト留めされたウエハチャックの熱管理のシステム及び方法 |
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JP2017553895A Active JP7014607B2 (ja) | 2015-08-06 | 2016-08-04 | ウエハ処理システム向けの熱管理のシステム及び方法 |
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KR (4) | KR20240015747A (ja) |
CN (4) | CN107533999B (ja) |
TW (4) | TWI808334B (ja) |
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US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10535549B2 (en) * | 2017-10-27 | 2020-01-14 | Applied Materials, Inc. | Lift pin holder |
KR20200023988A (ko) | 2018-08-27 | 2020-03-06 | 삼성전자주식회사 | 정전 척 및 상기 정전 척을 탑재한 웨이퍼 식각 장치 |
KR102460313B1 (ko) * | 2018-12-13 | 2022-10-28 | 주식회사 원익아이피에스 | 기판 처리 장치의 서셉터 및 기판 처리 장치 |
JP7254542B2 (ja) | 2019-02-01 | 2023-04-10 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
KR102677038B1 (ko) * | 2020-05-22 | 2024-06-19 | 세메스 주식회사 | 정전 척과 그 제조 방법 및 기판 처리 장치 |
JP2022047847A (ja) * | 2020-09-14 | 2022-03-25 | 株式会社Kelk | ウェーハの温度調節装置 |
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TWI703671B (zh) | 2020-09-01 |
JP2021185605A (ja) | 2021-12-09 |
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TW202224081A (zh) | 2022-06-16 |
CN107533999B (zh) | 2022-03-15 |
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