TWI555831B - Silicon wafer polishing composition - Google Patents

Silicon wafer polishing composition Download PDF

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Publication number
TWI555831B
TWI555831B TW102113682A TW102113682A TWI555831B TW I555831 B TWI555831 B TW I555831B TW 102113682 A TW102113682 A TW 102113682A TW 102113682 A TW102113682 A TW 102113682A TW I555831 B TWI555831 B TW I555831B
Authority
TW
Taiwan
Prior art keywords
weight
polishing
water
structural unit
wafer
Prior art date
Application number
TW102113682A
Other languages
English (en)
Chinese (zh)
Other versions
TW201346017A (zh
Inventor
三浦穰史
松井芳明
加藤佑樹
古高佑季
Original Assignee
花王股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 花王股份有限公司 filed Critical 花王股份有限公司
Publication of TW201346017A publication Critical patent/TW201346017A/zh
Application granted granted Critical
Publication of TWI555831B publication Critical patent/TWI555831B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW102113682A 2012-04-17 2013-04-17 Silicon wafer polishing composition TWI555831B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012094240A JP5822356B2 (ja) 2012-04-17 2012-04-17 シリコンウェーハ用研磨液組成物

Publications (2)

Publication Number Publication Date
TW201346017A TW201346017A (zh) 2013-11-16
TWI555831B true TWI555831B (zh) 2016-11-01

Family

ID=49383510

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102113682A TWI555831B (zh) 2012-04-17 2013-04-17 Silicon wafer polishing composition

Country Status (7)

Country Link
US (1) US20150111383A1 (https=)
EP (1) EP2840591B1 (https=)
JP (1) JP5822356B2 (https=)
KR (1) KR101639505B1 (https=)
CN (1) CN104272439B (https=)
TW (1) TWI555831B (https=)
WO (1) WO2013157554A1 (https=)

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TWI743245B (zh) * 2016-11-09 2021-10-21 日商福吉米股份有限公司 研磨用組成物及矽晶圓之研磨方法

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EP3145226A1 (en) 2012-07-27 2017-03-22 Kyocera Corporation Device to device connection set up
US10717899B2 (en) 2013-03-19 2020-07-21 Fujimi Incorporated Polishing composition, method for producing polishing composition and polishing composition preparation kit
JP5900913B2 (ja) * 2013-03-19 2016-04-06 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨用組成物調製用キット
EP3007213B1 (en) * 2013-06-07 2020-03-18 Fujimi Incorporated Use of a composition for silicon wafer polishing
JP6373273B2 (ja) * 2013-10-04 2018-08-15 株式会社Sumco 研磨剤組成物、シリコンウェハー用研磨剤組成物、およびシリコンウェハー製品の製造方法
JP5893706B2 (ja) * 2013-10-25 2016-03-23 花王株式会社 シリコンウェーハ用研磨液組成物
JP6168984B2 (ja) * 2013-12-24 2017-07-26 花王株式会社 シリコンウェーハ用研磨液組成物
JP5859055B2 (ja) * 2014-04-14 2016-02-10 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP5859054B2 (ja) * 2014-04-14 2016-02-10 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP6265542B2 (ja) * 2014-05-30 2018-01-24 花王株式会社 半導体基板の製造方法
WO2016031485A1 (ja) * 2014-08-29 2016-03-03 株式会社フジミインコーポレーテッド 研磨用組成物および研磨用組成物の製造方法
JP6562605B2 (ja) * 2014-09-03 2019-08-21 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
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JP6403324B2 (ja) * 2014-12-25 2018-10-10 花王株式会社 シリコンウェーハ用研磨液組成物
JP6366139B2 (ja) * 2014-12-25 2018-08-01 花王株式会社 シリコンウェーハ用研磨液組成物の製造方法
JP5843036B1 (ja) 2015-06-23 2016-01-13 コニカミノルタ株式会社 再生研磨材スラリーの調製方法
EP3388195B1 (en) 2015-12-09 2022-05-04 Konica Minolta, Inc. Method for regenerating abrasive slurry
WO2018079675A1 (ja) * 2016-10-28 2018-05-03 花王株式会社 シリコンウェーハ用リンス剤組成物
EP3584298B1 (en) * 2017-02-17 2022-12-28 Fujimi Incorporated Polishing method using a polishing composition
WO2019030865A1 (ja) * 2017-08-09 2019-02-14 日立化成株式会社 研磨液及び研磨方法
KR20190074597A (ko) 2017-12-20 2019-06-28 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
US11133186B2 (en) * 2018-09-14 2021-09-28 Disco Corporation Processing method of workpiece
JP7133414B2 (ja) * 2018-09-20 2022-09-08 株式会社フジミインコーポレーテッド 研磨用組成物
JP7477964B2 (ja) 2019-12-13 2024-05-02 インテグリス・インコーポレーテッド 化学機械研磨組成物及びそれを用いた化学機械研磨方法
JP7433042B2 (ja) * 2019-12-24 2024-02-19 ニッタ・デュポン株式会社 研磨用組成物
JP7384726B2 (ja) * 2020-03-25 2023-11-21 山口精研工業株式会社 研磨剤組成物
CN121532466A (zh) * 2023-07-12 2026-02-13 Sk恩普士有限公司 半导体工艺用抛光组合物及利用其的基板的抛光方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI743245B (zh) * 2016-11-09 2021-10-21 日商福吉米股份有限公司 研磨用組成物及矽晶圓之研磨方法

Also Published As

Publication number Publication date
EP2840591A1 (en) 2015-02-25
JP2013222863A (ja) 2013-10-28
EP2840591B1 (en) 2020-01-01
KR20150002797A (ko) 2015-01-07
CN104272439B (zh) 2016-12-21
CN104272439A (zh) 2015-01-07
US20150111383A1 (en) 2015-04-23
JP5822356B2 (ja) 2015-11-24
EP2840591A4 (en) 2016-01-20
TW201346017A (zh) 2013-11-16
KR101639505B1 (ko) 2016-07-13
WO2013157554A1 (ja) 2013-10-24

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