CN104272439B - 硅晶圆用研磨液组合物 - Google Patents

硅晶圆用研磨液组合物 Download PDF

Info

Publication number
CN104272439B
CN104272439B CN201380020648.9A CN201380020648A CN104272439B CN 104272439 B CN104272439 B CN 104272439B CN 201380020648 A CN201380020648 A CN 201380020648A CN 104272439 B CN104272439 B CN 104272439B
Authority
CN
China
Prior art keywords
weight
silicon wafer
liquid composition
water
grinding liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380020648.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN104272439A (zh
Inventor
三浦穣史
松井芳明
加藤佑树
古高佑季
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Publication of CN104272439A publication Critical patent/CN104272439A/zh
Application granted granted Critical
Publication of CN104272439B publication Critical patent/CN104272439B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN201380020648.9A 2012-04-17 2013-04-16 硅晶圆用研磨液组合物 Expired - Fee Related CN104272439B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-094240 2012-04-17
JP2012094240A JP5822356B2 (ja) 2012-04-17 2012-04-17 シリコンウェーハ用研磨液組成物
PCT/JP2013/061326 WO2013157554A1 (ja) 2012-04-17 2013-04-16 シリコンウェーハ用研磨液組成物

Publications (2)

Publication Number Publication Date
CN104272439A CN104272439A (zh) 2015-01-07
CN104272439B true CN104272439B (zh) 2016-12-21

Family

ID=49383510

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380020648.9A Expired - Fee Related CN104272439B (zh) 2012-04-17 2013-04-16 硅晶圆用研磨液组合物

Country Status (7)

Country Link
US (1) US20150111383A1 (https=)
EP (1) EP2840591B1 (https=)
JP (1) JP5822356B2 (https=)
KR (1) KR101639505B1 (https=)
CN (1) CN104272439B (https=)
TW (1) TWI555831B (https=)
WO (1) WO2013157554A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3145226A1 (en) 2012-07-27 2017-03-22 Kyocera Corporation Device to device connection set up
US10717899B2 (en) 2013-03-19 2020-07-21 Fujimi Incorporated Polishing composition, method for producing polishing composition and polishing composition preparation kit
JP5900913B2 (ja) * 2013-03-19 2016-04-06 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨用組成物調製用キット
EP3007213B1 (en) * 2013-06-07 2020-03-18 Fujimi Incorporated Use of a composition for silicon wafer polishing
JP6373273B2 (ja) * 2013-10-04 2018-08-15 株式会社Sumco 研磨剤組成物、シリコンウェハー用研磨剤組成物、およびシリコンウェハー製品の製造方法
JP5893706B2 (ja) * 2013-10-25 2016-03-23 花王株式会社 シリコンウェーハ用研磨液組成物
JP6168984B2 (ja) * 2013-12-24 2017-07-26 花王株式会社 シリコンウェーハ用研磨液組成物
JP5859055B2 (ja) * 2014-04-14 2016-02-10 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP5859054B2 (ja) * 2014-04-14 2016-02-10 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP6265542B2 (ja) * 2014-05-30 2018-01-24 花王株式会社 半導体基板の製造方法
WO2016031485A1 (ja) * 2014-08-29 2016-03-03 株式会社フジミインコーポレーテッド 研磨用組成物および研磨用組成物の製造方法
JP6562605B2 (ja) * 2014-09-03 2019-08-21 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
JP6367113B2 (ja) * 2014-12-25 2018-08-01 花王株式会社 シリコンウェーハ用研磨液組成物
JP6403324B2 (ja) * 2014-12-25 2018-10-10 花王株式会社 シリコンウェーハ用研磨液組成物
JP6366139B2 (ja) * 2014-12-25 2018-08-01 花王株式会社 シリコンウェーハ用研磨液組成物の製造方法
JP5843036B1 (ja) 2015-06-23 2016-01-13 コニカミノルタ株式会社 再生研磨材スラリーの調製方法
EP3388195B1 (en) 2015-12-09 2022-05-04 Konica Minolta, Inc. Method for regenerating abrasive slurry
WO2018079675A1 (ja) * 2016-10-28 2018-05-03 花王株式会社 シリコンウェーハ用リンス剤組成物
EP3540761B1 (en) * 2016-11-09 2022-01-05 Fujimi Incorporated Polishing composition and method for polishing silicon wafer
EP3584298B1 (en) * 2017-02-17 2022-12-28 Fujimi Incorporated Polishing method using a polishing composition
WO2019030865A1 (ja) * 2017-08-09 2019-02-14 日立化成株式会社 研磨液及び研磨方法
KR20190074597A (ko) 2017-12-20 2019-06-28 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
US11133186B2 (en) * 2018-09-14 2021-09-28 Disco Corporation Processing method of workpiece
JP7133414B2 (ja) * 2018-09-20 2022-09-08 株式会社フジミインコーポレーテッド 研磨用組成物
JP7477964B2 (ja) 2019-12-13 2024-05-02 インテグリス・インコーポレーテッド 化学機械研磨組成物及びそれを用いた化学機械研磨方法
JP7433042B2 (ja) * 2019-12-24 2024-02-19 ニッタ・デュポン株式会社 研磨用組成物
JP7384726B2 (ja) * 2020-03-25 2023-11-21 山口精研工業株式会社 研磨剤組成物
CN121532466A (zh) * 2023-07-12 2026-02-13 Sk恩普士有限公司 半导体工艺用抛光组合物及利用其的基板的抛光方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1745460A (zh) * 2003-01-31 2006-03-08 日立化成工业株式会社 Cmp研磨剂以及研磨方法
US20100163786A1 (en) * 2008-12-25 2010-07-01 Masahiro Izumi Polishing composition for semiconductor wafer
US20110053462A1 (en) * 2008-02-06 2011-03-03 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281481A (en) 1992-02-28 1994-01-25 Borg-Warner Automotive Transmission & Engine Components Corporation Powder coating of thermosetting adhesives onto metal substrates to enable a friction material to be bonded to the metal substrate
JP3750292B2 (ja) 1997-06-27 2006-03-01 Ｊｓｒ株式会社 光選択吸収性樹脂成形品、その製造方法および光学フィルター
JP3195569B2 (ja) 1997-08-11 2001-08-06 守 磯 繭型コロイダルシリカの製造方法
JP4212861B2 (ja) 2002-09-30 2009-01-21 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法
JP4011566B2 (ja) 2003-07-25 2007-11-21 扶桑化学工業株式会社 シリカゾル及びその製造方法
JP4566645B2 (ja) 2003-07-25 2010-10-20 扶桑化学工業株式会社 シリカゾル及びその製造方法
KR100961116B1 (ko) * 2005-04-14 2010-06-07 쇼와 덴코 가부시키가이샤 연마 조성물
JP4872919B2 (ja) 2005-11-11 2012-02-08 日立化成工業株式会社 酸化ケイ素用研磨剤、添加液および研磨方法
CN101496143B (zh) * 2006-07-28 2011-04-06 昭和电工株式会社 研磨组合物
JP5204960B2 (ja) 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP2008091524A (ja) 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
KR100725803B1 (ko) * 2006-12-05 2007-06-08 제일모직주식회사 실리콘 웨이퍼 최종 연마용 슬러리 조성물　및 이를 이용한실리콘 웨이퍼 최종 연마 방법
JPWO2009031389A1 (ja) * 2007-09-03 2010-12-09 Jsr株式会社 化学機械研磨用水系分散体およびその調製方法、化学機械研磨用水系分散体を調製するためのキット、ならびに半導体装置の化学機械研磨方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
JP5413566B2 (ja) * 2008-02-06 2014-02-12 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
JP5327430B2 (ja) * 2008-06-24 2013-10-30 Ｊｓｒ株式会社 化学機械研磨用水系分散体、化学機械研磨用水系分散体の製造方法および化学機械研磨方法
KR101359092B1 (ko) * 2009-11-11 2014-02-05 가부시키가이샤 구라레 화학적 기계적 연마용 슬러리 및 그것을 이용하는 기판의 연마 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1745460A (zh) * 2003-01-31 2006-03-08 日立化成工业株式会社 Cmp研磨剂以及研磨方法
US20110053462A1 (en) * 2008-02-06 2011-03-03 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
US20100163786A1 (en) * 2008-12-25 2010-07-01 Masahiro Izumi Polishing composition for semiconductor wafer

Also Published As

Publication number Publication date
TWI555831B (zh) 2016-11-01
EP2840591A1 (en) 2015-02-25
JP2013222863A (ja) 2013-10-28
EP2840591B1 (en) 2020-01-01
KR20150002797A (ko) 2015-01-07
CN104272439A (zh) 2015-01-07
US20150111383A1 (en) 2015-04-23
JP5822356B2 (ja) 2015-11-24
EP2840591A4 (en) 2016-01-20
TW201346017A (zh) 2013-11-16
KR101639505B1 (ko) 2016-07-13
WO2013157554A1 (ja) 2013-10-24

Similar Documents

Publication Publication Date Title
CN104272439B (zh) 硅晶圆用研磨液组合物
TWI541335B (zh) Silicon wafer polishing composition
KR101331823B1 (ko) 실리콘 웨이퍼용 연마액 조성물
JP6836671B2 (ja) シリコンウェーハ用研磨液組成物、又はシリコンウェーハ用研磨液組成物キット
JP4772156B1 (ja) シリコンウエハ用研磨液組成物
JP6893835B2 (ja) シリコンウェーハ用仕上げ研磨液組成物
JP6039419B2 (ja) シリコンウェーハ用研磨液組成物
JP6245939B2 (ja) シリコンウェーハ用研磨液組成物
JP5995659B2 (ja) シリコンウェーハ用研磨液組成物
JP6403324B2 (ja) シリコンウェーハ用研磨液組成物
JP6265542B2 (ja) 半導体基板の製造方法
JP6169938B2 (ja) シリコンウェーハ用研磨液組成物
JP6366139B2 (ja) シリコンウェーハ用研磨液組成物の製造方法
JP6168984B2 (ja) シリコンウェーハ用研磨液組成物
JP2016119418A (ja) シリコンウェーハ用研磨液組成物
JP6367113B2 (ja) シリコンウェーハ用研磨液組成物
JP6418941B2 (ja) シリコンウェーハ用研磨液組成物
CN116034149A (zh) 硅基板的研磨

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20161221