JP5822356B2 - シリコンウェーハ用研磨液組成物 - Google Patents

シリコンウェーハ用研磨液組成物 Download PDF

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Publication number
JP5822356B2
JP5822356B2 JP2012094240A JP2012094240A JP5822356B2 JP 5822356 B2 JP5822356 B2 JP 5822356B2 JP 2012094240 A JP2012094240 A JP 2012094240A JP 2012094240 A JP2012094240 A JP 2012094240A JP 5822356 B2 JP5822356 B2 JP 5822356B2
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JP
Japan
Prior art keywords
weight
polishing
silicon wafer
structural unit
component
Prior art date
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Application number
JP2012094240A
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English (en)
Japanese (ja)
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JP2013222863A (ja
JP2013222863A5 (https=
Inventor
穣史 三浦
穣史 三浦
芳明 松井
芳明 松井
佑樹 加藤
佑樹 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2012094240A priority Critical patent/JP5822356B2/ja
Application filed by Kao Corp filed Critical Kao Corp
Priority to KR1020147031669A priority patent/KR101639505B1/ko
Priority to PCT/JP2013/061326 priority patent/WO2013157554A1/ja
Priority to US14/394,985 priority patent/US20150111383A1/en
Priority to EP13778433.6A priority patent/EP2840591B1/en
Priority to CN201380020648.9A priority patent/CN104272439B/zh
Priority to TW102113682A priority patent/TWI555831B/zh
Publication of JP2013222863A publication Critical patent/JP2013222863A/ja
Publication of JP2013222863A5 publication Critical patent/JP2013222863A5/ja
Application granted granted Critical
Publication of JP5822356B2 publication Critical patent/JP5822356B2/ja
Active legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2012094240A 2012-04-17 2012-04-17 シリコンウェーハ用研磨液組成物 Active JP5822356B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012094240A JP5822356B2 (ja) 2012-04-17 2012-04-17 シリコンウェーハ用研磨液組成物
PCT/JP2013/061326 WO2013157554A1 (ja) 2012-04-17 2013-04-16 シリコンウェーハ用研磨液組成物
US14/394,985 US20150111383A1 (en) 2012-04-17 2013-04-16 Composition for silicon wafer polishing liquid
EP13778433.6A EP2840591B1 (en) 2012-04-17 2013-04-16 Method for polishing a silicon wafer
KR1020147031669A KR101639505B1 (ko) 2012-04-17 2013-04-16 실리콘 웨이퍼용 연마액 조성물
CN201380020648.9A CN104272439B (zh) 2012-04-17 2013-04-16 硅晶圆用研磨液组合物
TW102113682A TWI555831B (zh) 2012-04-17 2013-04-17 Silicon wafer polishing composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012094240A JP5822356B2 (ja) 2012-04-17 2012-04-17 シリコンウェーハ用研磨液組成物

Publications (3)

Publication Number Publication Date
JP2013222863A JP2013222863A (ja) 2013-10-28
JP2013222863A5 JP2013222863A5 (https=) 2015-07-16
JP5822356B2 true JP5822356B2 (ja) 2015-11-24

Family

ID=49383510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012094240A Active JP5822356B2 (ja) 2012-04-17 2012-04-17 シリコンウェーハ用研磨液組成物

Country Status (7)

Country Link
US (1) US20150111383A1 (https=)
EP (1) EP2840591B1 (https=)
JP (1) JP5822356B2 (https=)
KR (1) KR101639505B1 (https=)
CN (1) CN104272439B (https=)
TW (1) TWI555831B (https=)
WO (1) WO2013157554A1 (https=)

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JP5900913B2 (ja) * 2013-03-19 2016-04-06 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨用組成物調製用キット
EP3007213B1 (en) * 2013-06-07 2020-03-18 Fujimi Incorporated Use of a composition for silicon wafer polishing
JP6373273B2 (ja) * 2013-10-04 2018-08-15 株式会社Sumco 研磨剤組成物、シリコンウェハー用研磨剤組成物、およびシリコンウェハー製品の製造方法
JP5893706B2 (ja) * 2013-10-25 2016-03-23 花王株式会社 シリコンウェーハ用研磨液組成物
JP6168984B2 (ja) * 2013-12-24 2017-07-26 花王株式会社 シリコンウェーハ用研磨液組成物
JP5859055B2 (ja) * 2014-04-14 2016-02-10 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP5859054B2 (ja) * 2014-04-14 2016-02-10 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP6265542B2 (ja) * 2014-05-30 2018-01-24 花王株式会社 半導体基板の製造方法
WO2016031485A1 (ja) * 2014-08-29 2016-03-03 株式会社フジミインコーポレーテッド 研磨用組成物および研磨用組成物の製造方法
JP6562605B2 (ja) * 2014-09-03 2019-08-21 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
JP6367113B2 (ja) * 2014-12-25 2018-08-01 花王株式会社 シリコンウェーハ用研磨液組成物
JP6403324B2 (ja) * 2014-12-25 2018-10-10 花王株式会社 シリコンウェーハ用研磨液組成物
JP6366139B2 (ja) * 2014-12-25 2018-08-01 花王株式会社 シリコンウェーハ用研磨液組成物の製造方法
JP5843036B1 (ja) 2015-06-23 2016-01-13 コニカミノルタ株式会社 再生研磨材スラリーの調製方法
EP3388195B1 (en) 2015-12-09 2022-05-04 Konica Minolta, Inc. Method for regenerating abrasive slurry
WO2018079675A1 (ja) * 2016-10-28 2018-05-03 花王株式会社 シリコンウェーハ用リンス剤組成物
EP3540761B1 (en) * 2016-11-09 2022-01-05 Fujimi Incorporated Polishing composition and method for polishing silicon wafer
EP3584298B1 (en) * 2017-02-17 2022-12-28 Fujimi Incorporated Polishing method using a polishing composition
WO2019030865A1 (ja) * 2017-08-09 2019-02-14 日立化成株式会社 研磨液及び研磨方法
KR20190074597A (ko) 2017-12-20 2019-06-28 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
US11133186B2 (en) * 2018-09-14 2021-09-28 Disco Corporation Processing method of workpiece
JP7133414B2 (ja) * 2018-09-20 2022-09-08 株式会社フジミインコーポレーテッド 研磨用組成物
JP7477964B2 (ja) 2019-12-13 2024-05-02 インテグリス・インコーポレーテッド 化学機械研磨組成物及びそれを用いた化学機械研磨方法
JP7433042B2 (ja) * 2019-12-24 2024-02-19 ニッタ・デュポン株式会社 研磨用組成物
JP7384726B2 (ja) * 2020-03-25 2023-11-21 山口精研工業株式会社 研磨剤組成物
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Also Published As

Publication number Publication date
TWI555831B (zh) 2016-11-01
EP2840591A1 (en) 2015-02-25
JP2013222863A (ja) 2013-10-28
EP2840591B1 (en) 2020-01-01
KR20150002797A (ko) 2015-01-07
CN104272439B (zh) 2016-12-21
CN104272439A (zh) 2015-01-07
US20150111383A1 (en) 2015-04-23
EP2840591A4 (en) 2016-01-20
TW201346017A (zh) 2013-11-16
KR101639505B1 (ko) 2016-07-13
WO2013157554A1 (ja) 2013-10-24

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